CN101457124B - Chemico-mechanical polishing liquid - Google Patents
Chemico-mechanical polishing liquid Download PDFInfo
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- CN101457124B CN101457124B CN 200710172365 CN200710172365A CN101457124B CN 101457124 B CN101457124 B CN 101457124B CN 200710172365 CN200710172365 CN 200710172365 CN 200710172365 A CN200710172365 A CN 200710172365A CN 101457124 B CN101457124 B CN 101457124B
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Abstract
The present invention discloses a chemical machinery polishing solution, which includes seat grinding granule and water, and two or more compounds like group described in Formula I The chemical machinery polishing solution provided in the invention can obviously improve polycrystalline silicon removal rate.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid in the semiconductor fabrication process.
Background technology
Along with the continuous development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, it is particularly crucial that the planarization of conductive layer and insulating medium layer becomes.Cmp (CMP) technology of initiative is considered to the effective means of present overall planarization by IBM Corporation's twentieth century eighties.
Cmp (CMP) is by chemical action and mechanical effect and two kinds of effect be combined intos.Its equipment is usually by a grinding stage (polishing table) that has polishing pad (pad), and a grinding head (carrier) that is used for carries chips (wafer) is formed.Wherein grinding head is fixed chip, and the front with chip is pressed on the grinding pad then.When carrying out cmp, grinding head is in the last linear movement of polishing pad (pad) or along the direction of motion rotation the same with grinding stage.Meanwhile, the slurries (slurry) that contain abrasive are dripped on the polishing pad (pad), and are tiled on the polishing pad (pad) because of centrifugation.Overall planarization is realized on chip (wafer) surface under machinery and chemical dual effect.
According to the difference of chemically machinery polished particular problem to be solved, the removal speed (removal rate) of polysilicon (Poly silicon) there are two kinds of different requirements.Wherein, a class is to improve removal rate of polysilicon:
US2006014390 discloses a kind of for the polishing fluid that improves removal rate of polysilicon, and it comprises weight percent is that 4.25%～18.5% abrasive and weight percent are 0.05%～1.5% additive.Wherein additive mainly is selected from organic basess such as quaternary ammonium salt, quaternary amine alkali and thanomin.In addition, this polishing fluid also comprises nonionic surface active agent, for example the homopolymerization of ethylene glycol or propylene glycol or copolymerization product.
US2002032987 discloses a kind of with the polishing fluid of hydramine as additive, to improve the removal speed (removal rate) of polysilicon (Poly silicon), the wherein preferred 2-of additive (dimethylamino)-2-methyl isophthalic acid-propyl alcohol.
US2002151252 discloses a kind of polishing fluid that contains the complexing agent with a plurality of carboxylic acid structures, is used for improving polysilicon and removes speed, and wherein preferred complexing agent is EDTA (ethylenediamine tetraacetic acid (EDTA)) and DTPA (diethyl pentetic acid).
EP1072662 discloses a kind of organic polishing fluid that contains lone-pair electron and two key generation delocalization structures, and to improve the removal speed (removal rate) of polysilicon (Poly silicon), preferred compound is compound and the salt thereof of guanidine class.
Summary of the invention
Technical problem to be solved by this invention provides a kind of chemical mechanical polishing liquid that polysilicon is removed speed that significantly improves.
Polishing fluid of the present invention contains abrasive grains and water, also contains to have two or more suc as formula the compound of the group shown in the I.
Wherein, described have in two or more compounds suc as formula the group shown in the I contain two or more N atomic time, these N atoms are with one or more-CH
2-CH
2-link to each other, that preferable is 1～3-CH
2-CH
2-.Preferred compound is suc as formula in the phosphonic acids shown in II～V and the salt thereof one or more.What described salt was preferable is sodium salt, sylvite or ammonium salt, and described ammonium salt is primary amine salt, secondary amine salt, tertiary ammonium salt or quaternary amine.Described have two or more suc as formula the content of the compound of the group shown in the I preferable for mass percent 0.01～5%.
Formula II (Amino Trimethylene Phosphonic Acid, ATMP)
Formula III (triethylene tetramine pregnancy fork phosphonic acids, DEDTMP)
Formula IV (ethylene diamine tetra methylene phosphonic acid, EDTMP)
Formula V (diethylene triamine pentamethylene phosphonic, DTPMPA)
Wherein, described abrasive grains is preferable is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more, that better is SiO
2What the content of described abrasive grains was preferable is mass percent 0.1～30%.
The preferable pH scope of polishing fluid of the present invention is 8～12.
Polishing fluid of the present invention also can contain other conventional additives of this area, as pH regulator agent, dispersion agent and tensio-active agent etc.Wherein, described pH regulator agent can be selected from one or more in NaOH, KOH, ammonia, organic bases and the nitric acid.Described organic bases is preferable is selected from primary amine, secondary amine, tertiary amine and the quaternary amine alkali one or more.Wherein, the optional auto-polymerization ionogen of described dispersion agent, one or more that preferable is in polyvinyl alcohol, polyacrylic acid, polyacrylamide and the polyethylene oxide.What the molecular weight of described polyvinyl alcohol was preferable is 84000～89000, and what polyacrylic molecular weight was preferable is 3000～5000, and the molecular weight of polyacrylamide is preferable is about 300,000, and what the molecular weight of polyethylene oxide was preferable is 9000～12500.Described tensio-active agent can be selected from quaternary amine type tensio-active agent, for example: chlorination octadecyl trimethylammonium quaternary amine.That the content of tensio-active agent is preferable is mass ratio 10～100ppm.
Polishing fluid of the present invention evenly mixes by mentioned component is simple, and adopting the pH regulator agent to be adjusted to suitable pH value afterwards can make.Among the present invention, agents useful for same and raw material be commercially available getting all.
Positive progressive effect of the present invention is: chemical mechanical polishing liquid of the present invention can significantly improve polysilicon and remove speed.
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～11
Table 1 has provided the embodiment 1～11 of chemical mechanical polishing liquid of the present invention, by prescription in the table, each component is mixed, and adopting the pH regulator agent to be adjusted to suitable pH value afterwards can make.Embodiment 5～11 adopts NaOH, KOH, ammoniacal liquor, primary amine, secondary amine, tertiary amine and quaternary amine alkali to do the pH regulator agent successively respectively.
The embodiment 1～11 of table 1 chemical mechanical polishing liquid of the present invention
Effect embodiment
Contrast polishing fluid: 1% silicon-dioxide (95 ± 5nm), 99% deionized water.
(95 ± 5nm), 0.5%ATMP (Amino Trimethylene Phosphonic Acid) adjusts pH to 10.283,98.5% deionized water with the 30%KOH aqueous solution to polishing fluid 1:1% silicon-dioxide.
Make polishing fluid by prescription.Above-mentioned polishing fluid is used for the chemically machinery polished of polysilicon, polishing condition is: polishing machine platform is Logitech (Britain) 1PM52 type, 12 inches politex polishing pads (pad), 4cm*4cm square Wafer, grinding pressure 3psi, 70 rev/mins of grinding stage (polishing table) rotating speeds, 150 rev/mins of grinding head (carrier) rotation rotating speeds, polishing fluid rate of addition 100ml/min.The result is as shown in table 2.
Table 2 contrast polishing fluid and 1 pair of removal rate of polysilicon of polishing fluid of the present invention
| Polishing fluid | Abrasive grains silicon-dioxide wt% | Additive wt% | pH | Polysilicon is removed speed (A/min) |
| Contrast | 1 | \ | 10.283 | 1206 |
| 1 | 1 | 0.5% Amino Trimethylene Phosphonic Acid | 10.282 | 1892 |
By table 2 as seen, compare with the contrast polishing fluid, polishing fluid 1 of the present invention can significantly improve removal rate of polysilicon.
Claims (11)
1. the application of chemical mechanical polishing liquid in improving the polysilicon polishing speed is characterized in that described polishing fluid comprises abrasive grains and water and has two or more suc as formula the compound of the group shown in the I
The formula I.
2. application as claimed in claim 1 is characterized in that: described have in two or more compounds suc as formula the group shown in the I contain two or more N atomic time, these N atoms are with one or more-CH
2-CH
2-link to each other.
3. application as claimed in claim 2 is characterized in that: described one or more-CH
2-CH
2-be 1～3-CH
2-CH
2-.
4. application as claimed in claim 1 is characterized in that: described have two or more suc as formula the compounds of the group shown in the I for suc as formula in the phosphonic acids shown in II～V and the salt thereof one or more
The formula II
The formula III
The formula IV
The formula V.
5. application as claimed in claim 4 is characterized in that: described salt is sodium salt, sylvite or ammonium salt.
6. application as claimed in claim 5 is characterized in that: described ammonium salt is uncle's ammonium salt, secondary ammonium salt, tertiary amine salt or quaternary ammonium salt.
7. application as claimed in claim 1 is characterized in that: described to have two or more content suc as formula the compound of the group shown in the I be mass percent 0.01～5%.
8. application as claimed in claim 1 is characterized in that: described abrasive grains is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.
9. application as claimed in claim 1 is characterized in that: the content of described abrasive grains is mass percent 0.1～30%.
10. application as claimed in claim 1 is characterized in that: the pH of described polishing fluid is 8～12.
11. application as claimed in claim 1 is characterized in that: described polishing fluid also contains one or more in pH regulator agent, dispersion agent and the tensio-active agent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710172365 CN101457124B (en) | 2007-12-14 | 2007-12-14 | Chemico-mechanical polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710172365 CN101457124B (en) | 2007-12-14 | 2007-12-14 | Chemico-mechanical polishing liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101457124A CN101457124A (en) | 2009-06-17 |
| CN101457124B true CN101457124B (en) | 2013-08-28 |
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|---|---|---|---|
| CN 200710172365 Active CN101457124B (en) | 2007-12-14 | 2007-12-14 | Chemico-mechanical polishing liquid |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8025813B2 (en) * | 2009-11-12 | 2011-09-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| CN102383120B (en) * | 2011-10-18 | 2013-06-19 | 广西民族大学 | Preparation method and film formation liquid for aluminium-alloy organic sealing film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1711626A (en) * | 2002-11-08 | 2005-12-21 | 福吉米株式会社 | Polishing composition and rinsing composition |
-
2007
- 2007-12-14 CN CN 200710172365 patent/CN101457124B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1711626A (en) * | 2002-11-08 | 2005-12-21 | 福吉米株式会社 | Polishing composition and rinsing composition |
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| Publication number | Publication date |
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| CN101457124A (en) | 2009-06-17 |
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