CN101958696A - 温度补偿薄膜体波谐振器及加工方法 - Google Patents
温度补偿薄膜体波谐振器及加工方法 Download PDFInfo
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- CN101958696A CN101958696A CN2010102938460A CN201010293846A CN101958696A CN 101958696 A CN101958696 A CN 101958696A CN 2010102938460 A CN2010102938460 A CN 2010102938460A CN 201010293846 A CN201010293846 A CN 201010293846A CN 101958696 A CN101958696 A CN 101958696A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
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CN201010293846.0A CN101958696B (zh) | 2010-09-27 | 2010-09-27 | 温度补偿薄膜体波谐振器及加工方法 |
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Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102175314A (zh) * | 2011-02-10 | 2011-09-07 | 山东科技大学 | 增强式薄膜体声波谐振紫外光探测器 |
CN102820527A (zh) * | 2012-07-31 | 2012-12-12 | 深圳光启创新技术有限公司 | 一种雷达天线以及雷达*** |
CN103472129A (zh) * | 2013-09-17 | 2013-12-25 | 天津大学 | 用于流体环境检测的谐振传感器 |
CN103684336A (zh) * | 2012-08-31 | 2014-03-26 | 安华高科技通用Ip(新加坡)公司 | 包含具有内埋式温度补偿层的电极的谐振器装置 |
CN103858342A (zh) * | 2011-12-08 | 2014-06-11 | 三星电子株式会社 | 体声波谐振器及其制造方法以及使用体声波谐振器的射频装置 |
CN105245198A (zh) * | 2015-11-13 | 2016-01-13 | 中国科学院上海微***与信息技术研究所 | 微机械硅谐振器的温度补偿结构及制作方法 |
US9450167B2 (en) | 2013-03-28 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device having an interlayer |
US9479139B2 (en) | 2010-04-29 | 2016-10-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
US9608192B2 (en) | 2013-03-28 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device |
CN106788316A (zh) * | 2015-11-25 | 2017-05-31 | 中国科学院上海微***与信息技术研究所 | 压阻式恒温控制振荡器及其制备方法 |
CN107453729A (zh) * | 2017-06-28 | 2017-12-08 | 中国电子科技集团公司第五十五研究所 | 一种基于复合结构的温度补偿薄膜体声波谐振器 |
CN108931292A (zh) * | 2017-05-24 | 2018-12-04 | 赫拉胡克两合公司 | 用于校准至少一个传感器的方法 |
CN110460320A (zh) * | 2019-08-06 | 2019-11-15 | 中国电子科技集团公司第二十六研究所 | 膜层结构、其制造方法及包括该膜层结构的滤波器 |
CN110868171A (zh) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | 谐振器、晶片及谐振器制造方法 |
CN111010115A (zh) * | 2019-08-09 | 2020-04-14 | 天津大学 | 体声波谐振器、滤波器和电子设备及控制谐振器温度的方法 |
CN111092606A (zh) * | 2019-12-31 | 2020-05-01 | 诺思(天津)微***有限责任公司 | 温补层结构、体声波谐振器及制造方法,滤波器、电子设备 |
CN112969830A (zh) * | 2018-12-21 | 2021-06-15 | 香港科技大学 | 软声学边界平板 |
WO2021147633A1 (zh) * | 2020-01-22 | 2021-07-29 | 诺思(天津)微***有限责任公司 | 一种滤波器、双工器、高频前端电路及通信装置 |
CN113328724A (zh) * | 2021-07-22 | 2021-08-31 | 绍兴汉天下微电子有限公司 | 一种体声波谐振器及其制作方法 |
WO2022183559A1 (zh) * | 2021-03-05 | 2022-09-09 | 天津大学 | 温度补偿型薄膜体声波谐振器及其形成方法、电子设备 |
CN115225060A (zh) * | 2022-09-15 | 2022-10-21 | 常州承芯半导体有限公司 | 声表面波谐振装置及其形成方法 |
CN115296638A (zh) * | 2022-08-22 | 2022-11-04 | 武汉敏声新技术有限公司 | 一种谐振器及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1340915A (zh) * | 2000-08-31 | 2002-03-20 | 安捷伦科技有限公司 | 声波谐振器及在温度变化时运行其以保持谐振的方法 |
US20030128081A1 (en) * | 2002-01-09 | 2003-07-10 | Nokia Corporation | Bulk acoustic wave resonator with two piezoelectric layers as balun in filters and duplexers |
CN1902819A (zh) * | 2003-10-30 | 2007-01-24 | 阿瓦戈科技无线Ip(新加坡)股份有限公司 | 有温度补偿的薄膜体声谐振器 |
-
2010
- 2010-09-27 CN CN201010293846.0A patent/CN101958696B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1340915A (zh) * | 2000-08-31 | 2002-03-20 | 安捷伦科技有限公司 | 声波谐振器及在温度变化时运行其以保持谐振的方法 |
US20030128081A1 (en) * | 2002-01-09 | 2003-07-10 | Nokia Corporation | Bulk acoustic wave resonator with two piezoelectric layers as balun in filters and duplexers |
CN1902819A (zh) * | 2003-10-30 | 2007-01-24 | 阿瓦戈科技无线Ip(新加坡)股份有限公司 | 有温度补偿的薄膜体声谐振器 |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9479139B2 (en) | 2010-04-29 | 2016-10-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
CN102175314A (zh) * | 2011-02-10 | 2011-09-07 | 山东科技大学 | 增强式薄膜体声波谐振紫外光探测器 |
CN103858342B (zh) * | 2011-12-08 | 2017-03-22 | 三星电子株式会社 | 体声波谐振器及其制造方法以及使用体声波谐振器的射频装置 |
CN103858342A (zh) * | 2011-12-08 | 2014-06-11 | 三星电子株式会社 | 体声波谐振器及其制造方法以及使用体声波谐振器的射频装置 |
CN102820527A (zh) * | 2012-07-31 | 2012-12-12 | 深圳光启创新技术有限公司 | 一种雷达天线以及雷达*** |
CN102820527B (zh) * | 2012-07-31 | 2015-11-25 | 深圳光启创新技术有限公司 | 一种雷达天线以及雷达*** |
CN103684336B (zh) * | 2012-08-31 | 2017-01-11 | 安华高科技通用Ip(新加坡)公司 | 包含具有内埋式温度补偿层的电极的谐振器装置 |
CN103684336A (zh) * | 2012-08-31 | 2014-03-26 | 安华高科技通用Ip(新加坡)公司 | 包含具有内埋式温度补偿层的电极的谐振器装置 |
US9450167B2 (en) | 2013-03-28 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device having an interlayer |
US9608192B2 (en) | 2013-03-28 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device |
CN103472129B (zh) * | 2013-09-17 | 2017-01-11 | 天津大学 | 用于流体环境检测的谐振传感器 |
CN103472129A (zh) * | 2013-09-17 | 2013-12-25 | 天津大学 | 用于流体环境检测的谐振传感器 |
CN105245198A (zh) * | 2015-11-13 | 2016-01-13 | 中国科学院上海微***与信息技术研究所 | 微机械硅谐振器的温度补偿结构及制作方法 |
CN106788316B (zh) * | 2015-11-25 | 2019-04-16 | 中国科学院上海微***与信息技术研究所 | 压阻式恒温控制振荡器及其制备方法 |
CN106788316A (zh) * | 2015-11-25 | 2017-05-31 | 中国科学院上海微***与信息技术研究所 | 压阻式恒温控制振荡器及其制备方法 |
CN108931292A (zh) * | 2017-05-24 | 2018-12-04 | 赫拉胡克两合公司 | 用于校准至少一个传感器的方法 |
CN108931292B (zh) * | 2017-05-24 | 2023-11-14 | 赫拉胡克两合公司 | 用于校准至少一个传感器的方法 |
CN107453729B (zh) * | 2017-06-28 | 2021-04-06 | 中国电子科技集团公司第五十五研究所 | 一种基于复合结构的温度补偿薄膜体声波谐振器 |
CN107453729A (zh) * | 2017-06-28 | 2017-12-08 | 中国电子科技集团公司第五十五研究所 | 一种基于复合结构的温度补偿薄膜体声波谐振器 |
CN112969830A (zh) * | 2018-12-21 | 2021-06-15 | 香港科技大学 | 软声学边界平板 |
CN110868171A (zh) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | 谐振器、晶片及谐振器制造方法 |
CN110868171B (zh) * | 2019-04-23 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | 谐振器、晶片及谐振器制造方法 |
CN110460320A (zh) * | 2019-08-06 | 2019-11-15 | 中国电子科技集团公司第二十六研究所 | 膜层结构、其制造方法及包括该膜层结构的滤波器 |
CN111010115A (zh) * | 2019-08-09 | 2020-04-14 | 天津大学 | 体声波谐振器、滤波器和电子设备及控制谐振器温度的方法 |
CN111092606A (zh) * | 2019-12-31 | 2020-05-01 | 诺思(天津)微***有限责任公司 | 温补层结构、体声波谐振器及制造方法,滤波器、电子设备 |
WO2021135017A1 (zh) * | 2019-12-31 | 2021-07-08 | 诺思(天津)微***有限责任公司 | 温补层结构、体声波谐振器及制造方法,滤波器、电子设备 |
WO2021147633A1 (zh) * | 2020-01-22 | 2021-07-29 | 诺思(天津)微***有限责任公司 | 一种滤波器、双工器、高频前端电路及通信装置 |
WO2022183559A1 (zh) * | 2021-03-05 | 2022-09-09 | 天津大学 | 温度补偿型薄膜体声波谐振器及其形成方法、电子设备 |
CN113328724A (zh) * | 2021-07-22 | 2021-08-31 | 绍兴汉天下微电子有限公司 | 一种体声波谐振器及其制作方法 |
CN115296638A (zh) * | 2022-08-22 | 2022-11-04 | 武汉敏声新技术有限公司 | 一种谐振器及其制备方法 |
CN115225060A (zh) * | 2022-09-15 | 2022-10-21 | 常州承芯半导体有限公司 | 声表面波谐振装置及其形成方法 |
WO2024055980A1 (zh) * | 2022-09-15 | 2024-03-21 | 常州承芯半导体有限公司 | 声表面波谐振装置及其形成方法 |
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Address after: No. 27 Xinye Fifth Street, Tianjin Binhai New Area Economic and Technological Development Zone, 300462 Patentee after: ROFS MICROSYSTEM(TIANJIN) Co.,Ltd. Address before: 300462 27 new business five street, Tianjin economic and Technological Development Zone Patentee before: ROFS MICROSYSTEM(TIANJIN) Co.,Ltd. |
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Denomination of invention: Temperature compensated thin film bulk wave resonator and its processing method Effective date of registration: 20210908 Granted publication date: 20130417 Pledgee: Tianjin TEDA Haihe intelligent manufacturing industry development fund partnership (L.P.) Pledgor: ROFS MICROSYSTEM(TIANJIN) Co.,Ltd. Registration number: Y2021980009022 |
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Effective date of registration: 20240130 Granted publication date: 20130417 |