CN101958383A - 一种倒装磷化铝镓铟发光二极管的制作方法 - Google Patents
一种倒装磷化铝镓铟发光二极管的制作方法 Download PDFInfo
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- CN101958383A CN101958383A CN2010102984401A CN201010298440A CN101958383A CN 101958383 A CN101958383 A CN 101958383A CN 2010102984401 A CN2010102984401 A CN 2010102984401A CN 201010298440 A CN201010298440 A CN 201010298440A CN 101958383 A CN101958383 A CN 101958383A
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- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 claims description 15
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- 229910052802 copper Inorganic materials 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical group [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
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- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 8
- 229910005540 GaP Inorganic materials 0.000 description 6
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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CN2010102984401A CN101958383B (zh) | 2010-10-07 | 2010-10-07 | 一种倒装磷化铝镓铟发光二极管的制作方法 |
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CN2010102984401A CN101958383B (zh) | 2010-10-07 | 2010-10-07 | 一种倒装磷化铝镓铟发光二极管的制作方法 |
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CN101958383A true CN101958383A (zh) | 2011-01-26 |
CN101958383B CN101958383B (zh) | 2012-07-11 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104300055A (zh) * | 2013-07-17 | 2015-01-21 | 晶元光电股份有限公司 | 发光元件 |
US10002991B2 (en) | 2013-07-10 | 2018-06-19 | Epistar Corporation | Light-emitting element |
CN112992884A (zh) * | 2020-12-08 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | 显示模组、其制作方法及电子设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1192043A (zh) * | 1997-02-28 | 1998-09-02 | 惠普公司 | 难划片材料的划片和裂片的改进 |
CN1295350A (zh) * | 1999-11-05 | 2001-05-16 | 洲磊科技股份有限公司 | 发光半导体装置及其制作方法 |
CN1466227A (zh) * | 2002-07-01 | 2004-01-07 | 厦门三安电子有限公司 | 一种制作氮化镓发光二极管芯片n电极的方法 |
CN101207172A (zh) * | 2007-11-30 | 2008-06-25 | 厦门三安电子有限公司 | 一种倒梯形微结构高亮度发光二极管及其制作方法 |
CN201307601Y (zh) * | 2008-09-09 | 2009-09-09 | 厦门市三安光电科技有限公司 | 一种填充式倒梯形微结构高亮度发光二极管 |
CN101783381A (zh) * | 2010-01-27 | 2010-07-21 | 厦门市三安光电科技有限公司 | 一种包覆式扩展电极发光二极管的制作方法 |
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2010
- 2010-10-07 CN CN2010102984401A patent/CN101958383B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1192043A (zh) * | 1997-02-28 | 1998-09-02 | 惠普公司 | 难划片材料的划片和裂片的改进 |
CN1295350A (zh) * | 1999-11-05 | 2001-05-16 | 洲磊科技股份有限公司 | 发光半导体装置及其制作方法 |
CN1466227A (zh) * | 2002-07-01 | 2004-01-07 | 厦门三安电子有限公司 | 一种制作氮化镓发光二极管芯片n电极的方法 |
CN101207172A (zh) * | 2007-11-30 | 2008-06-25 | 厦门三安电子有限公司 | 一种倒梯形微结构高亮度发光二极管及其制作方法 |
CN201307601Y (zh) * | 2008-09-09 | 2009-09-09 | 厦门市三安光电科技有限公司 | 一种填充式倒梯形微结构高亮度发光二极管 |
CN101783381A (zh) * | 2010-01-27 | 2010-07-21 | 厦门市三安光电科技有限公司 | 一种包覆式扩展电极发光二极管的制作方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10002991B2 (en) | 2013-07-10 | 2018-06-19 | Epistar Corporation | Light-emitting element |
CN104300055A (zh) * | 2013-07-17 | 2015-01-21 | 晶元光电股份有限公司 | 发光元件 |
CN104300055B (zh) * | 2013-07-17 | 2019-05-10 | 晶元光电股份有限公司 | 发光元件 |
CN110265517A (zh) * | 2013-07-17 | 2019-09-20 | 晶元光电股份有限公司 | 发光元件 |
CN110265517B (zh) * | 2013-07-17 | 2024-03-29 | 晶元光电股份有限公司 | 发光元件 |
CN112992884A (zh) * | 2020-12-08 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | 显示模组、其制作方法及电子设备 |
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CN101958383B (zh) | 2012-07-11 |
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Owner name: ANHUI SAN AN OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: XIAMEN SAN AN PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20120104 |
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Effective date of registration: 20120104 Address after: 241000 Anhui city of Wuhu Province Economic and Technological Development Zone Dong Liang Road No. 8 Applicant after: Anhui San'an Optoelectronics Co., Ltd. Address before: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Applicant before: Xiamen San'an Photoelectric Technology Co., Ltd. |
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