CN101958371B - 铜铟镓硒薄膜太阳能电池制备装置 - Google Patents
铜铟镓硒薄膜太阳能电池制备装置 Download PDFInfo
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- CN101958371B CN101958371B CN2010105073034A CN201010507303A CN101958371B CN 101958371 B CN101958371 B CN 101958371B CN 2010105073034 A CN2010105073034 A CN 2010105073034A CN 201010507303 A CN201010507303 A CN 201010507303A CN 101958371 B CN101958371 B CN 101958371B
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CN2010105073034A CN101958371B (zh) | 2010-10-13 | 2010-10-13 | 铜铟镓硒薄膜太阳能电池制备装置 |
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CN2010105073034A CN101958371B (zh) | 2010-10-13 | 2010-10-13 | 铜铟镓硒薄膜太阳能电池制备装置 |
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CN101958371A CN101958371A (zh) | 2011-01-26 |
CN101958371B true CN101958371B (zh) | 2011-11-23 |
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Families Citing this family (9)
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CN102881763A (zh) * | 2011-07-11 | 2013-01-16 | 刘莹 | 一种激光烧结制晶体硅太阳能电池背电极的设备 |
CN105645107B (zh) * | 2014-11-13 | 2019-10-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 应用于超高真空环境的样品传输***及方法 |
CN106769273B (zh) * | 2015-11-24 | 2019-06-04 | 中国科学院沈阳科学仪器股份有限公司 | 一种用于超高真空下的全自动样品多工序生产***及方法 |
CN108061808B (zh) * | 2016-11-08 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种用于纳米材料实验的真空互联***及方法 |
CN108068118B (zh) * | 2016-11-14 | 2021-06-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种应用于真空互联***的样品传送*** |
CN106531850A (zh) * | 2016-12-29 | 2017-03-22 | 浙江合特光电有限公司 | 异质结电池的制备方法 |
CN109910033B (zh) * | 2017-12-13 | 2022-03-08 | 中国科学院沈阳科学仪器股份有限公司 | 一种机械手 |
CN108445248B (zh) * | 2018-05-16 | 2024-02-27 | 大连交通大学 | 一种低温二维真空样品台 |
CN112582553A (zh) * | 2020-11-16 | 2021-03-30 | 新余学院 | 一种大面积制备钙钛矿太阳电池的先进专用设备 |
Family Cites Families (8)
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EP0969499A3 (en) * | 1998-07-03 | 2001-10-24 | Canon Kabushiki Kaisha | Crystal growth process for a semiconductor device |
CN2404215Y (zh) * | 1999-12-22 | 2000-11-01 | 中国科学院沈阳科学仪器研制中心 | 非晶硅薄膜太阳能电池制作装置 |
CN101093863A (zh) * | 2007-06-12 | 2007-12-26 | 南开大学 | ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法 |
US20100047954A1 (en) * | 2007-08-31 | 2010-02-25 | Su Tzay-Fa Jeff | Photovoltaic production line |
CN100519835C (zh) * | 2007-11-01 | 2009-07-29 | 中国科学院电工研究所 | 一种生长硅基薄膜及高效硅基薄膜太阳能电池的pecvd设备 |
CN101397647B (zh) * | 2008-11-03 | 2011-08-17 | 清华大学 | 铜铟镓硒或铜铟铝硒太阳能电池吸收层靶材及其制备方法 |
CN101771099B (zh) * | 2008-12-30 | 2011-08-17 | 中国电子科技集团公司第十八研究所 | 一种铜铟镓硒半导体薄膜的制备方法 |
CN101764181A (zh) * | 2009-12-03 | 2010-06-30 | 郭玉钦 | 磁控溅射和共蒸发法组合工艺制备铜铟镓硒软体太阳能电池的方法 |
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Effective date of registration: 20200630 Address after: Office building of Shenzhen Institute of advanced technology A-207 518000 in Guangdong city of Shenzhen province Nanshan District City Road No. 1068 Chinese Academy of Shenzhen University Academy of Sciences Patentee after: Shenzhen advanced science and technology Cci Capital Ltd. Address before: 1068 No. 518055 Guangdong city in Shenzhen Province, Nanshan District City Xili University School Avenue Patentee before: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20201029 Address after: 519000 the 12 floor of A District, No. 1, Port Road, Tangjia Bay, Zhuhai High-tech Zone, Guangdong. Patentee after: ZHUHAI INSTITUTE OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES Co.,Ltd. Address before: Office building of Shenzhen Institute of advanced technology A-207 518000 in Guangdong city of Shenzhen province Nanshan District City Road No. 1068 Chinese Academy of Shenzhen University Academy of Sciences Patentee before: Shenzhen advanced science and technology Cci Capital Ltd. |
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Effective date of registration: 20210421 Address after: Room 1102, building 5, Longyuan intelligent industrial park, No.2, hagongda Road, Tangjiawan Town, high tech Zone, Zhuhai City, Guangdong Province, 519000 Patentee after: Zhuhai Zhongke advanced technology industry Co.,Ltd. Address before: 519000 the 12 floor of A District, No. 1, Port Road, Tangjia Bay, Zhuhai High-tech Zone, Guangdong. Patentee before: ZHUHAI INSTITUTE OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES Co.,Ltd. |