CN101958102A - Active matrix organic light-emitting display with shared data line structure - Google Patents
Active matrix organic light-emitting display with shared data line structure Download PDFInfo
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- CN101958102A CN101958102A CN2010102818384A CN201010281838A CN101958102A CN 101958102 A CN101958102 A CN 101958102A CN 2010102818384 A CN2010102818384 A CN 2010102818384A CN 201010281838 A CN201010281838 A CN 201010281838A CN 101958102 A CN101958102 A CN 101958102A
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Abstract
The invention relates to an active matrix organic light-emitting display, in particular to an active matrix organic light-emitting display with shared data line structure. The invention adopts the technical scheme that: a pixel set with shared data line pixel unit is arranged on an array substrate of the active matrix organic light-emitting display. Therefore, the number of the data lines of the whole array substrate is half of the number of the data lines of the traditional structure; the circuit integration is effectively increased; and the using cost of a data chip is reduced.
Description
Technical field
The present invention relates to a kind of active matrix/organic light emitting display, relate in particular to a kind of active matrix/organic light emitting display with common data line structure.
Background technology
In recent years, because in light weight, advantage such as volume is little, flat-panel monitor especially LCD (LCD) and display of organic electroluminescence (OLED) are widely used in display terminals such as cell phone, digital camera, notebook computer and flat panel TV.Owing to have brightness, viewing angle properties, response speed and the display effect that is better than LCD, the advantage that OLED is acknowledged as flat-panel monitor of future generation, particularly active matrix/organic light emitting display (AMOLED) is more outstanding.AMOLED realizes luminous Presentation Function by form the OLED pixel device on thin film transistor (TFT) (TFT) array base palte.
At present, the pel array of tradition active matrix/organic light emitting display is shown in Figure 1A, and Figure 1B is the equivalent circuit diagram of Figure 1A pel array, as shown in the figure, be placed with multi-strip scanning line (gate line) 101 and many data lines (data line) 102 on the substrate, and the two is vertical mutually.Pixel cell 100 is matrix form and arranges on substrate, each pixel cell comprises a switching TFT 103, a drive TFT 104, a memory capacitance 105 and an OLED luminescence unit 106, each pixel cell is electrically connected with an one scan line and a data line again, obtain sweep signal by sweep trace, obtain display data signal by data line.Data line and data chip (source IC) are electrically connected, and sweep trace is electrically connected with scanning chip (gate IC).The traditional wiring structure is that a data lines is controlled a row pixel, a sweep trace control one-row pixels.And high more to the exploration on display resolution ratio requirement, the pixel that needs is also many more, and the quantity of corresponding data chip and scanning chip is also many more.And in the actual production, the price of data chip is higher than the scanning chip far away, and therefore, how simplifying circuit design structure is in the AMOLED manufacture process one of problem to be solved to be arranged to reduce production costs.
Summary of the invention
At the problems referred to above, the purpose of this invention is to provide a kind of active matrix/organic light emitting display with common data line structure.
The objective of the invention is to be achieved by following technical solution:
The invention provides a kind of active matrix/organic light emitting display, comprise a substrate, the a plurality of pixel groups that on substrate, are arranged, many the data lines of configured in parallel on substrate, the multi-strip scanning line of configured in parallel on substrate, above-mentioned each pixel groups comprises two pixel cells, and the shared same data line of these two pixel cells is between two pixel cells of this data line bit in above-mentioned pixel groups.Above-mentioned two pixel cells are electrically connected with each self-corresponding sweep trace respectively, and two sweep traces of same pixel groups correspondence lay respectively at the relative both sides of this pixel groups and vertical with data line.
Above-mentioned each pixel cell comprises a control circuit unit and a luminescence unit, and the control circuit unit of two pixel cells is positioned at two relative angle ends of this pixel groups in the same pixel groups.Above-mentioned control circuit unit comprises a switching thin-film transistor, a drive thin film transistors, a memory capacitance at least.
Described luminescence unit is an organic electroluminescence cell.
Technical solution of the present invention can make the data number of lines of active matrix/organic light emitting display array base palte reduce by half than traditional structure, effectively improve circuit level, reduce the use cost of data chip, be particularly useful on the products such as mobile communication equipment and large scale video playback apparatus.
Description of drawings
Figure 1A is the picture element array structure synoptic diagram of traditional active matrix/organic light emitting display;
Figure 1B is the equivalent circuit diagram of Figure 1A active matrix/organic light emitting display pel array;
Fig. 2 A is the picture element array structure synoptic diagram of active matrix/organic light emitting display of the present invention;
Fig. 2 B is the equivalent circuit diagram of active matrix/organic light emitting display pel array shown in Fig. 2 A;
Fig. 2 C is the structural representation of a pixel groups in the pel array shown in Fig. 2 A;
Fig. 3 A is the polysilicon layer of preparation pixel groups and the synoptic diagram of gate insulation layer;
Fig. 3 B is the sectional view in A-A ' cross section among Fig. 3 A;
Fig. 3 C is for forming the synoptic diagram of grid and interlayer insulating film;
Fig. 3 D is the sectional view in A-A ' cross section among Fig. 3 C;
Fig. 3 E is for forming the synoptic diagram of contact hole pattern;
Fig. 3 F is the sectional view in A-A ' cross section among Fig. 3 E;
Fig. 3 G is for forming the synoptic diagram of source electrode, drain electrode, data line and passivation layer;
Fig. 3 H is the sectional view in A-A ' cross section among Fig. 3 G;
Fig. 3 I is for forming the synoptic diagram of pixel electrode pattern;
Fig. 3 J is the sectional view in B-B ' cross section among Fig. 3 I.
Embodiment
For allowing foregoing of the present invention become apparent, preferred embodiment cited below particularly, and be described in detail below in conjunction with the accompanying drawings.
Embodiment
Fig. 2 A is the picture element array structure synoptic diagram of active matrix/organic light emitting display of the present invention, and as shown in the figure, the pel array of active matrix/organic light emitting display of the present invention is the matrix form arrangement by some pixel groups 200 and forms.Fig. 2 B is the equivalent circuit diagram of active matrix/organic light emitting display pel array shown in Fig. 2 A, Fig. 2 C is the structural representation of a pixel groups in the pel array shown in Fig. 2 A, as shown in the figure, each pixel groups comprises two pixel cells 201, each pixel cell comprises a control circuit unit and an organic electroluminescence cell 205, wherein control circuit unit comprises a switching TFT 202, a drive TFT 203, a memory capacitance 204, each pixel cell is electrically connected with one scan line 206 respectively again, obtains sweep signal by sweep trace; Two pixel cells in the same pixel groups are common to be electrically connected with a data line 207, obtains display data signal by data line.
Fig. 3 A～3J is the manufacturing process steps synoptic diagram of pixel groups shown in Fig. 2 C.
Fig. 3 A is the polysilicon layer of formation pixel groups and the synoptic diagram of gate insulation layer, and Fig. 3 B is the sectional view in A-A ' cross section among Fig. 3 A.As shown in the figure, at first on array base palte 301 (glass etc.), deposit a cushion 302 successively, be generally materials such as silicon nitride, monox, then continue the deposition semi-conductor layer, be generally amorphous silicon layer (a-Si).Amorphous silicon layer is adopted quasi-molecule laser annealing (ELA), solid phase crystallization (SPC) or crystallization inducing metal methods such as (MIC), convert it into polysilicon layer (P-Si) 303.Adopt the method for photoetching then, on polysilicon layer, form silicon island 304.Then, adopt the method for chemical vapor deposition (CVD), on silicon island and the cushion that is not capped, deposit gate insulation layer 305.
Fig. 3 C is for forming the synoptic diagram of grid and interlayer insulating film, and Fig. 3 D is the sectional view in A-A ' cross section among Fig. 3 C.As shown in the figure, sputter the first metal layer (not shown) on gate insulation layer, the method of employing photoetching forms the grid 309 of grid 306, sweep trace 307, electric capacity first electrode 308 and the drive TFT of switching TFT respectively, then adopts the method for CVD to form interlayer insulating film 310.
Shown in Fig. 3 E, in switching TFT grid both sides, the both sides and the drive TFT grid both sides of electric capacity first electrode, the method that adopts photoetching forms contact hole 311 deleting on insulation course and the interlayer insulating film, and Fig. 3 F is the sectional view in A-A ' cross section among Fig. 3 E.
Fig. 3 G is for forming the synoptic diagram of source electrode, drain electrode, data line and passivation layer, and Fig. 3 H is the sectional view in A-A ' cross section among Fig. 3 G.As shown in the figure, deposition second metal level 312 on interlayer insulating film, and adopt the method for photoetching to form figure.Wherein, the source electrode 313 of switching TFT is electrically connected by contact hole 314 and polysilicon layer, and the source electrode 313 of switching TFT also is electrically connected with data line 315 simultaneously; The drain electrode 316 of switching TFT is electrically connected by contact hole 317 and polysilicon layer, and is electrically connected by contact hole 318 and the grid of drive TFT and first electrode of memory capacitance.Polysilicon layer 319 is electrically connected by contact hole 320 and driven line 321, forms second electrode of storage capacitors.Then, adopt the method deposition passivation insulation 322 of CVD.
Fig. 3 I is for forming the synoptic diagram of pixel electrode pattern, and Fig. 3 J is the sectional view in B-B ' cross section among Fig. 3 I, as shown in the figure, adopts the method for photoetching, at the drain electrode place formation contact hole 323 of drive TFT.Then adopt the method for sputter, form transparent electrode layers such as a tin indium oxide (ITO) or indium zinc oxide, and adopt the method for photoetching, form the transparent anode layer 324 of OLED luminescence unit, the transparent anode layer is electrically connected by the drain electrode of contact hole 323 with drive TFT.
By above processing step, just can finish the preparation of described pixel groups.By some pixel groups are arranged, can finish the manufacturing of active matrix/organic light emitting display array base palte.
The array base palte of active matrix/organic light emitting display of the present invention is arranged by the some pixel groups shown in Fig. 2 A and forms, each pixel groups comprises two pixel cells, each pixel cell comprises a control circuit unit and an OLED luminescence unit, and wherein control circuit unit comprises a switching TFT, a drive TFT, a memory capacitance.The control circuit unit of two pixel cells is positioned at two relative angle ends of pixel groups in the same pixel groups.Each pixel cell is electrically connected with the one scan line respectively again, obtains sweep signal by sweep trace; Two pixel cells in the same pixel groups are common to be electrically connected with a data line, obtains display data signal by data line.During display work, respectively two pixel cells in the same pixel groups are carried out gating, realize the demonstration of corresponding data separately by lining by line scan of sweep trace.Owing to compare than traditional structure, the shared same data lines of two pixel cells among the present invention in the same pixel groups, therefore the data number of lines of whole array base palte is reduced by half than traditional structure, reduced the use cost of data chip accordingly, be particularly useful on the products such as mobile communication equipment and video playback apparatus.
It should be noted that at last; above embodiment is only unrestricted in order to technical scheme of the present invention to be described; although the present invention is had been described in detail with reference to preferred embodiment; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim scope person of defining.
Claims (10)
1. active matrix/organic light emitting display comprises:
One substrate;
A plurality of pixel groups are arranged on substrate;
Many data lines, configured in parallel is on substrate;
The multi-strip scanning line, configured in parallel is on substrate;
It is characterized in that described each pixel groups comprises two pixel cells, the shared same data line of described two pixel cells.
2. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, between two pixel cells of described data line bit in described pixel groups.
3. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, described two pixel cells are electrically connected with each self-corresponding sweep trace respectively.
4. a kind of active matrix/organic light emitting display according to claim 3 is characterized in that, two sweep traces of same pixel groups correspondence lay respectively at the relative both sides of this pixel groups and vertical with data line.
5. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, each pixel cell comprises a control circuit unit and a luminescence unit.
6. a kind of active matrix/organic light emitting display according to claim 5 is characterized in that, the control circuit unit of two pixel cells is positioned at two relative angle ends of this pixel groups in the same pixel groups.
7. a kind of active matrix/organic light emitting display according to claim 5 is characterized in that, described control circuit unit comprises a switching thin-film transistor, a drive thin film transistors and a memory capacitance at least.
8. a kind of active matrix/organic light emitting display according to claim 5 is characterized in that, described luminescence unit is an organic electroluminescence cell.
9. a mobile communication equipment is characterized in that, described mobile communication equipment comprises active matrix/organic light emitting display as claimed in claim 1.
10. a video playback apparatus is characterized in that, described video playback apparatus comprises active matrix/organic light emitting display as claimed in claim 1.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102122488A (en) * | 2011-03-11 | 2011-07-13 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix organic light-emitting display (OLED) and drive method thereof |
| CN104078004A (en) * | 2014-06-18 | 2014-10-01 | 京东方科技集团股份有限公司 | Pixel circuit and display device |
| CN104078003A (en) * | 2014-06-18 | 2014-10-01 | 京东方科技集团股份有限公司 | Pixel circuit and display device |
| CN104091559A (en) * | 2014-06-19 | 2014-10-08 | 京东方科技集团股份有限公司 | Pixel circuit as well as driving method and display device thereof |
| CN109872697A (en) * | 2019-03-26 | 2019-06-11 | 合肥鑫晟光电科技有限公司 | A kind of array substrate, display panel, display device |
| CN113270046A (en) * | 2020-02-14 | 2021-08-17 | 群创光电股份有限公司 | Electronic device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6207367B2 (en) * | 2013-12-05 | 2017-10-04 | 株式会社ジャパンディスプレイ | Organic electroluminescence display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0951008A2 (en) * | 1998-03-06 | 1999-10-20 | OIS Optical Imaging Systems, Inc. | Method and system for addressing LCD including thin film diodes |
| CN101501749A (en) * | 2006-06-30 | 2009-08-05 | 剑桥显示技术有限公司 | Active matrix organic electro-optic devices |
| CN101582423A (en) * | 2009-06-30 | 2009-11-18 | 友达光电股份有限公司 | Pixel structure and making method thereof |
| CN101726941A (en) * | 2008-10-28 | 2010-06-09 | 瀚宇彩晶股份有限公司 | Homeotropic liquid crystal display and pixel structure thereof |
| CN101826300A (en) * | 2010-03-30 | 2010-09-08 | 汕头超声显示器（二厂）有限公司 | Active display device and driving method thereof |
-
2010
- 2010-09-15 CN CN2010102818384A patent/CN101958102B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0951008A2 (en) * | 1998-03-06 | 1999-10-20 | OIS Optical Imaging Systems, Inc. | Method and system for addressing LCD including thin film diodes |
| CN101501749A (en) * | 2006-06-30 | 2009-08-05 | 剑桥显示技术有限公司 | Active matrix organic electro-optic devices |
| CN101726941A (en) * | 2008-10-28 | 2010-06-09 | 瀚宇彩晶股份有限公司 | Homeotropic liquid crystal display and pixel structure thereof |
| CN101582423A (en) * | 2009-06-30 | 2009-11-18 | 友达光电股份有限公司 | Pixel structure and making method thereof |
| CN101826300A (en) * | 2010-03-30 | 2010-09-08 | 汕头超声显示器（二厂）有限公司 | Active display device and driving method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102122488A (en) * | 2011-03-11 | 2011-07-13 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix organic light-emitting display (OLED) and drive method thereof |
| CN102122488B (en) * | 2011-03-11 | 2013-03-27 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix organic light-emitting display (OLED) and drive method thereof |
| CN104078004A (en) * | 2014-06-18 | 2014-10-01 | 京东方科技集团股份有限公司 | Pixel circuit and display device |
| CN104078003A (en) * | 2014-06-18 | 2014-10-01 | 京东方科技集团股份有限公司 | Pixel circuit and display device |
| CN104078003B (en) * | 2014-06-18 | 2016-08-31 | 京东方科技集团股份有限公司 | Image element circuit and display device |
| CN104091559A (en) * | 2014-06-19 | 2014-10-08 | 京东方科技集团股份有限公司 | Pixel circuit as well as driving method and display device thereof |
| CN109872697A (en) * | 2019-03-26 | 2019-06-11 | 合肥鑫晟光电科技有限公司 | A kind of array substrate, display panel, display device |
| US11056057B2 (en) | 2019-03-26 | 2021-07-06 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Array substrate, display apparatus, and method of driving array substrate |
| CN109872697B (en) * | 2019-03-26 | 2023-12-15 | 合肥鑫晟光电科技有限公司 | Array substrate, display panel and display device |
| CN113270046A (en) * | 2020-02-14 | 2021-08-17 | 群创光电股份有限公司 | Electronic device |
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| CN101958102B (en) | 2013-01-09 |
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