CN101924122B - Active matrix/organic light emitting display and manufacturing method thereof - Google Patents
Active matrix/organic light emitting display and manufacturing method thereof Download PDFInfo
- Publication number
- CN101924122B CN101924122B CN201010177771XA CN201010177771A CN101924122B CN 101924122 B CN101924122 B CN 101924122B CN 201010177771X A CN201010177771X A CN 201010177771XA CN 201010177771 A CN201010177771 A CN 201010177771A CN 101924122 B CN101924122 B CN 101924122B
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- reservior capacitor
- light emitting
- organic light
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention relates to an active matrix/organic light emitting display and a manufacturing method thereof, in particular to an array substrate capable of effectively increasing storage capacitance and a manufacturing method thereof. The technical scheme effectively increases the storage capacitance by arranging a laminated storage capacitor structure with three shunt capacitors in the active matrix/organic light emitting display, without changing the pixel aperture ratio, and further improves the pixel brightness and elevates the picture quality of the panel.
Description
Technical field
The present invention relates to a kind of active matrix/organic light emitting display and manufacturing approach thereof, relate in particular to a kind of array base palte and manufacturing approach thereof that can effectively increase storage capacitors.
Background technology
In recent years, because in light weight, advantage such as volume is little, flat-panel monitor especially LCD (LCD) and OLED (OLED) is widely used in display terminals such as cell phone, digital camera, notebook computer and panel TV.Owing to have brightness, viewing angle properties, response speed and the display effect that is superior to LCD, OLED is acknowledged as flat-panel monitor of future generation, and particularly the advantage of active-matrix OLED (AMOLED) is more outstanding.AMOLED realizes luminous Presentation Function through on thin-film transistor (TFT) array base palte, forming the OLED pixel device.
In making that in order to improve exploration on display resolution ratio Pixel Dimensions dwindles; The area that can be used to place reservior capacitor in each pixel also must relatively dwindle; With the maintenance aperture ratio of pixels, so the researcher seeks the minimized method of the area that reservior capacitor is required all the time.At present, the dot structure of active matrix/organic light emitting display is as shown in Figure 1, and Fig. 2 is the equivalent circuit diagram of Fig. 1 dot structure; This pixel comprises gate line 111, the first metal electrodes 112, as the grid of driving transistors; One data wire, 121, the second metal electrodes 122 are as drive signal.Wherein storage capacitors 12 is made up of first metal electrode 112, insulating barrier and second metal electrode 122, because metal level is a light-proof material, therefore when increasing the metal electrode area with the increase charge storage capacity, will reduce aperture ratio of pixels.In order to remain in the time that shows a two field picture, the display effect of pixel does not change, and must design the electric capacity with certain storage capacitors value.Yet, when improving resolution,, can influence aperture ratio of pixels unavoidably in order to keep the area of reservior capacitor.Therefore, under the situation that does not influence aperture ratio of pixels, increase charge storage capacity; Or under the situation of the pixel aperture ratio that increases OLED, keep charge storage capacity, becoming in the AMOLED manufacture process has one of problem to be solved.
Summary of the invention
To the problems referred to above, the purpose of this invention is to provide a kind of active matrix/organic light emitting display and manufacturing approach thereof, to solve the contradiction between capacitance and the aperture opening ratio with novel storage capacitor structure.
The objective of the invention is to be achieved through following technical scheme:
The invention provides a kind of active matrix/organic light emitting display, comprise a substrate; Be disposed at a plurality of pixels on this substrate, and be arranged; Many the data wires of configured in parallel between pixel; Configured in parallel is between pixel and the multi-strip scanning line vertical with data wire.The reservior capacitor that has a lamination reservior capacitor structure in the pixel region of above-mentioned pixel, this lamination reservior capacitor structure comprises first reservior capacitor, second reservior capacitor, the 3rd reservior capacitor.First reservior capacitor is made up of first conductive layer, second conductive layer and first insulating barrier between this first conductive layer and this second conductive layer, and wherein first conductive layer is a polysilicon layer, and second conductive layer is a first metal layer.Second reservior capacitor is made up of second conductive layer, the 3rd conductive layer and second insulating barrier between this second conductive layer and the 3rd conductive layer, and wherein the 3rd conductive layer is second metal level.The 3rd reservior capacitor is made up of the 3rd conductive layer, the 4th conductive layer and the 3rd insulating barrier between the 3rd conductive layer and the 4th conductive layer, and wherein the 4th conductive layer is a transparent electrode layer.Above-mentioned first conductive layer and the 3rd conductive layer form and electrically contact, and said second conductive layer and the 4th conductive layer form and electrically contact, and first reservior capacitor, second reservior capacitor and the 3rd reservior capacitor are parallel with one another.
The present invention also provides a kind of manufacturing approach of active matrix/organic light emitting display, may further comprise the steps:
Form first reservior capacitor, this first reservior capacitor is made up of first conductive layer, second conductive layer and first insulating barrier between this first conductive layer and this second conductive layer;
Form second reservior capacitor, this second reservior capacitor is made up of second conductive layer, the 3rd conductive layer and second insulating barrier between this second conductive layer and the 3rd conductive layer;
Connect first conductive layer and the 3rd conductive layer electrically contacts with formation;
Form the 3rd reservior capacitor, the 3rd reservior capacitor is made up of the 3rd conductive layer, the 4th conductive layer and the 3rd insulating barrier between the 3rd conductive layer and the 4th conductive layer;
Connect second conductive layer and the 4th conductive layer electrically contacts with formation.
Technical scheme of the present invention can effectively improve the storage capacitors value of pixel, reduces the not area of luminescent metal, improves aperture ratio of pixels, and then improves the brightness of pixel, promotes the image quality of panel.
Description of drawings
Fig. 1 is a kind of dot structure sketch map of active matrix/organic light emitting display;
Fig. 2 is a kind of dot structure equivalent circuit diagram of active matrix/organic light emitting display;
Fig. 3 is the dot structure sketch map of active matrix/organic light emitting display of the present invention;
Fig. 4 A forms the sketch map of polysilicon semiconductor layer for the present invention;
Fig. 4 B is the sketch map of deposition gate insulation layer;
Fig. 4 C is for forming the sketch map of grid and the first metal layer;
Fig. 4 D is the sketch map of deposition interlayer insulating film;
Fig. 4 E is for forming the sketch map of contact hole pattern;
Fig. 4 F is the sketch map of formation source, drain electrode and second metal level;
Fig. 4 G is the sketch map of deposit passivation layer;
Fig. 4 H is for forming the sketch map of contact hole pattern;
Fig. 4 I is for forming the sketch map of transparent electrode layer;
Fig. 5 is the equivalent circuit diagram of lamination reservior capacitor of the present invention.
Embodiment
For making foregoing of the present invention more obviously understandable, hereinafter is special lifts preferred embodiment, and combines accompanying drawing to elaborate as follows.
Embodiment
Fig. 3 is the dot structure sketch map of active matrix/organic light emitting display of the present invention.This dot structure comprises, one scan line 301, one data wires 302, one drive voltage line 303, one switching thin-film transistors 304, a drive thin film transistors 305, a storage capacitors 306 and a viewing area 307.Fig. 4 A～4I is the formation sketch map of each processing step of A-A ' section among Fig. 3.Shown in Fig. 4 A, at first on array base palte 20 (like glass substrate), deposit a resilient coating (not shown) successively, then continue the deposition semi-conductor layer, be generally amorphous silicon layer.Adopt the method for photoetching then, form semiconductor island figure 201 and 202, adopt quasi-molecule laser annealing (ELA) or solid phase crystallization methods such as (SPC) again, form polysilicon layer.Then, adopt the chemical vapor deposition (CVD) method, on polysilicon layer, continue deposition gate insulation layer 31, shown in Fig. 4 B.Sputter the first metal layer on gate insulation layer 31 adopts photoetching method to form grid 211 and the first metal layer 212, shown in Fig. 4 C.Then, shown in Fig. 4 D, adopt the CVD method to form insulating barrier 32.Adopt the method for photoetching, on insulating barrier 32, form contact hole pattern, adopt the method for etching, on insulating barrier, form contact hole 321,322,323 and 324, the position is shown in Fig. 4 E.Then, shown in Fig. 4 F, deposition second metal level on insulating barrier 32, and the method for employing photoetching form the source electrode 221 and the drain electrode 222 of switching TFT, and second metal level 223.Wherein, drain electrode 222 is connected with the first metal layer 212 through contact hole 324 again, and as the grid of drive TFT, the while is also as the electrode of storage capacitance; Second metal level 223 and polysilicon layer 202 is connected through contact hole 323, forms the electrode of storage capacitors.Then, shown in Fig. 4 G, adopt the method for CVD, continue deposition passivation insulation 33, and shown in Fig. 4 H, utilize lithographic technique, form contact hole 331.At last, the method as Fig. 4 I adopts sputter forms transparent electrode layers such as a tin indium oxide (ITO) or indium zinc oxide, and adopts the method for photoetching, formation transparent electrode layer 231.
Fig. 5 is the equivalent circuit diagram of lamination reservior capacitor of the present invention, and as shown in the figure, the structure of the present invention's lamination reservior capacitor comprises the first reservior capacitor C1, the second reservior capacitor C2, the 3rd reservior capacitor C3.C1 is made up of first conductive layer 51, second conductive layer 52 and first insulating barrier 501 between this first conductive layer and this second conductive layer; Wherein first conductive layer 51 is polysilicon layer 202; Second conductive layer 52 is the first metal layer 212, the first insulating barriers 501 and is gate insulation layer 31.C2 is made up of second conductive layer 52, the 3rd conductive layer 53 and second insulating barrier 502 between this second conductive layer and the 3rd conductive layer, and wherein the 3rd conductive layer 53 is second metal level, 223, the second insulating barriers 502 and is insulating barrier 32.C3 is made up of the 3rd conductive layer 53, the 4th conductive layer 54 and the 3rd insulating barrier 503 between the 3rd conductive layer and the 4th conductive layer, and wherein the 4th conductive layer 54 is transparent electrode layer 231, the three insulating barriers 503 and is passivation insulation 33.First conductive layer 51 and the 3rd conductive layer 53 form through contact hole 323 and electrically contact, and have identical current potential, and second conductive layer 52 and the 4th conductive layer 54 form through contact hole 324 and electrically contact, and have identical current potential.In conjunction with Fig. 5,, can learn that said capacitor C 1, C2 and C3 are parallel with one another, total capacitance C=C1+C2+C3 according to the relation between each electric capacity.Therefore, adopt technical scheme of the present invention, under the situation that does not change pixel aperture ratio, can effectively increase the storage capacitors value, and then improve the brightness of pixel, promote the image quality of panels such as mobile communication equipment, video playback apparatus, display device.
Certainly, the present invention also can only adopt any three conductive layers composition storage capacitors in first to fourth conductive layer, can reach the effect that increases storage capacitors equally.
Though the present invention is to disclose as above than preferable embodiment; Yet it is not in order to limit the present invention; Anyly be familiar with this technological personage, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching; Therefore, protection scope of the present invention is as the criterion when the claim with application defines.
Claims (10)
1. active matrix/organic light emitting display comprises:
One substrate;
A plurality of pixels are arranged;
Many data wires, configured in parallel is between pixel;
Multi-strip scanning line, configured in parallel are between pixel and vertical with data wire;
The reservior capacitor that has a lamination reservior capacitor structure in the pixel region of said pixel; Said lamination reservior capacitor structure also comprises first reservior capacitor, second reservior capacitor, the 3rd reservior capacitor; It is characterized in that said first reservior capacitor is made up of first conductive layer, second conductive layer and first insulating barrier between this first conductive layer and this second conductive layer; Said second reservior capacitor is made up of above-mentioned second conductive layer, the 3rd conductive layer and second insulating barrier between above-mentioned second conductive layer and the 3rd conductive layer; Said the 3rd reservior capacitor is made up of above-mentioned the 3rd conductive layer, the 4th conductive layer and the 3rd insulating barrier between above-mentioned the 3rd conductive layer and the 4th conductive layer; Above-mentioned first conductive layer and the 3rd conductive layer form and electrically contact, and above-mentioned second conductive layer and the 4th conductive layer form and electrically contact.
2. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, said first reservior capacitor, second reservior capacitor, the 3rd reservior capacitor are parallel with one another.
3. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, said first conductive layer is a polysilicon layer.
4. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, said second conductive layer is a first metal layer.
5. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, said the 3rd conductive layer is second metal level.
6. a kind of active matrix/organic light emitting display according to claim 1 is characterized in that, said the 4th conductive layer is a transparent electrode layer.
7. the manufacturing approach of an active matrix/organic light emitting display, this active matrix/organic light emitting display comprises: a substrate; A plurality of pixels are arranged; Many data wires, configured in parallel is between pixel; Multi-strip scanning line, configured in parallel are between pixel and vertical with data wire; The reservior capacitor that has a lamination reservior capacitor structure in the pixel region of said pixel, said manufacturing approach may further comprise the steps:
Form first reservior capacitor, this first reservior capacitor is made up of first conductive layer, second conductive layer and first insulating barrier between this first conductive layer and this second conductive layer;
Form second reservior capacitor, this second reservior capacitor is made up of second conductive layer, the 3rd conductive layer and second insulating barrier between this second conductive layer and the 3rd conductive layer;
Connect first conductive layer and the 3rd conductive layer electrically contacts with formation;
Form the 3rd reservior capacitor, the 3rd reservior capacitor is made up of the 3rd conductive layer, the 4th conductive layer and the 3rd insulating barrier between the 3rd conductive layer and the 4th conductive layer;
Connect second conductive layer and the 4th conductive layer electrically contacts with formation.
8. a mobile communication equipment is characterized in that, said mobile communication equipment comprises active matrix/organic light emitting display as claimed in claim 1.
9. a video playback apparatus is characterized in that, said video playback apparatus comprises active matrix/organic light emitting display as claimed in claim 1.
10. a display device is characterized in that, said display device comprises active matrix/organic light emitting display as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010177771XA CN101924122B (en) | 2010-05-20 | 2010-05-20 | Active matrix/organic light emitting display and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010177771XA CN101924122B (en) | 2010-05-20 | 2010-05-20 | Active matrix/organic light emitting display and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101924122A CN101924122A (en) | 2010-12-22 |
| CN101924122B true CN101924122B (en) | 2012-07-18 |
Family
ID=43338910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010177771XA Active CN101924122B (en) | 2010-05-20 | 2010-05-20 | Active matrix/organic light emitting display and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101924122B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623399B (en) * | 2012-03-25 | 2014-08-27 | 昆山工研院新型平板显示技术中心有限公司 | Production method for array substrate of active-matrix organic light-emitting display (OLED) |
| CN102881711B (en) * | 2012-09-25 | 2014-11-12 | 南京中电熊猫液晶显示科技有限公司 | Active organic light emitting diode (OLED) |
| CN103065585B (en) * | 2012-12-19 | 2016-04-13 | 四川虹视显示技术有限公司 | A kind of AMOLED pixel-driving circuit and capacitor arrangement thereof |
| CN207909879U (en) * | 2018-03-28 | 2018-09-25 | 京东方科技集团股份有限公司 | array substrate, display panel and display device |
| CN109324448B (en) * | 2018-11-13 | 2021-12-14 | 昆山龙腾光电股份有限公司 | Array substrate and liquid crystal display device |
| CN109844951A (en) * | 2018-12-26 | 2019-06-04 | 深圳市汇顶科技股份有限公司 | Thin-film semiconductor structures, imaging sensor and hand-held device |
| CN110416278B (en) * | 2019-08-06 | 2022-09-27 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1246639A (en) * | 1998-07-24 | 2000-03-08 | 日本电气株式会社 | Active matrix-type liquid crystal display device |
| CN1598655A (en) * | 2000-04-24 | 2005-03-23 | 松下电器产业株式会社 | Display device and driving method thereof |
| CN1636235A (en) * | 2002-02-22 | 2005-07-06 | 三星电子株式会社 | Active matrix type organic electroluminescent display device and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2372620A (en) * | 2001-02-27 | 2002-08-28 | Sharp Kk | Active Matrix Device |
-
2010
- 2010-05-20 CN CN201010177771XA patent/CN101924122B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1246639A (en) * | 1998-07-24 | 2000-03-08 | 日本电气株式会社 | Active matrix-type liquid crystal display device |
| CN1598655A (en) * | 2000-04-24 | 2005-03-23 | 松下电器产业株式会社 | Display device and driving method thereof |
| CN1636235A (en) * | 2002-02-22 | 2005-07-06 | 三星电子株式会社 | Active matrix type organic electroluminescent display device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101924122A (en) | 2010-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10084030B2 (en) | Backplane substrate and organic light emitting diode display using the same | |
| CN101154346B (en) | System for displaying images and method for fabricating the same | |
| US7575966B2 (en) | Method for fabricating pixel structure of active matrix organic light-emitting diode | |
| CN101924122B (en) | Active matrix/organic light emitting display and manufacturing method thereof | |
| CN111668237B (en) | Display substrate, preparation method thereof, driving method thereof and display device | |
| US9991295B2 (en) | Array substrate manufactured by reduced times of patterning processes manufacturing method thereof and display apparatus | |
| CN108155195A (en) | Show equipment | |
| CN101997004A (en) | Semiconductor device and method for manufacturing the same | |
| KR102089244B1 (en) | Double gate type thin film transistor and organic light emitting diode display device including the same | |
| CN103489894A (en) | Active matrix organic electroluminescence display part and display device and manufacturing method thereof | |
| CN204179080U (en) | Display device | |
| US20100252833A1 (en) | Thin film transistor devices having transistors with different electrical characteristics and method for fabricating the same | |
| US7557498B2 (en) | System for displaying images including electroluminescent device and method for fabricating the same | |
| CN101958102B (en) | Active matrix organic light-emitting display with shared data line structure | |
| CN107275334A (en) | Display device | |
| CN103745954A (en) | Display device, array substrate and manufacturing method of array substrate | |
| WO2021227106A1 (en) | Display panel and manufacturing method therefor | |
| CN101834189A (en) | Image display system | |
| CN101521218B (en) | Image display system | |
| CN102005413A (en) | Production method of array substrate of organic light-emitting display of active matrix | |
| CN111724736A (en) | Array substrate, OLED display panel and display device | |
| CN101872779B (en) | Image display system and manufacturing method thereof | |
| CN1229681C (en) | Liquid crystal display and peripheric circuit structure and manufacturing method thereof | |
| CN101924071B (en) | Active matrix/organic light emitting display and manufacturing method thereof | |
| CN1307479C (en) | Capacitor arrangement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |