CN101943617B - 力传感器设备 - Google Patents
力传感器设备 Download PDFInfo
- Publication number
- CN101943617B CN101943617B CN201010250150.XA CN201010250150A CN101943617B CN 101943617 B CN101943617 B CN 101943617B CN 201010250150 A CN201010250150 A CN 201010250150A CN 101943617 B CN101943617 B CN 101943617B
- Authority
- CN
- China
- Prior art keywords
- power
- force snesor
- sensing element
- area
- actuator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004044 response Effects 0.000 claims abstract description 16
- 230000011218 segmentation Effects 0.000 claims description 19
- 230000008859 change Effects 0.000 claims description 14
- 230000003750 conditioning effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 2
- 230000006698 induction Effects 0.000 abstract description 31
- 239000000758 substrate Substances 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
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- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
- G01L1/2231—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports the supports being disc- or ring-shaped, adapted for measuring a force along a single direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/497299 | 2009-07-02 | ||
US12/497,299 US8327715B2 (en) | 2009-07-02 | 2009-07-02 | Force sensor apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101943617A CN101943617A (zh) | 2011-01-12 |
CN101943617B true CN101943617B (zh) | 2015-08-05 |
Family
ID=42791014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010250150.XA Expired - Fee Related CN101943617B (zh) | 2009-07-02 | 2010-07-01 | 力传感器设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8327715B2 (fr) |
EP (1) | EP2270455B1 (fr) |
CN (1) | CN101943617B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102656464B1 (ko) * | 2017-02-01 | 2024-04-09 | 허니웰 인터내셔날 인코포레이티드 | 멤브레인 절연형 겔 충전식 힘 센서 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8316725B2 (en) * | 2010-12-15 | 2012-11-27 | Honeywell International Inc. | Force sensor |
US9003899B2 (en) | 2012-03-23 | 2015-04-14 | Honeywell International Inc. | Force sensor |
US8806964B2 (en) | 2012-03-23 | 2014-08-19 | Honeywell International Inc. | Force sensor |
CN102636297B (zh) * | 2012-04-20 | 2013-08-07 | 合肥工业大学 | 一种三维力传感器 |
US9003897B2 (en) | 2012-05-10 | 2015-04-14 | Honeywell International Inc. | Temperature compensated force sensor |
US8757001B2 (en) * | 2012-09-27 | 2014-06-24 | Honeywell International Inc. | Mechanically coupled force sensor on flexible platform assembly structure |
US9164003B2 (en) * | 2012-10-11 | 2015-10-20 | Honeywell International Inc. | Force sensor with mechanical over-force transfer mechanism |
US9296607B2 (en) * | 2013-07-22 | 2016-03-29 | Invensense, Inc. | Apparatus and method for reduced strain on MEMS devices |
US9995641B2 (en) * | 2013-10-30 | 2018-06-12 | Honeywell International Inc. | Force sensor with gap-controlled over-force protection |
US9052246B2 (en) * | 2013-11-14 | 2015-06-09 | Honeywell International Inc. | Force sensor using integral force biasing for improved linearity |
US9261419B2 (en) | 2014-01-23 | 2016-02-16 | Honeywell International Inc. | Modular load structure assembly having internal strain gaged sensing |
US9835515B2 (en) | 2014-10-10 | 2017-12-05 | Stmicroeletronics S.R.L. | Pressure sensor with testing device and related methods |
TWI531783B (zh) * | 2014-10-28 | 2016-05-01 | Pressure sensor package structure | |
JP6666736B2 (ja) * | 2016-02-03 | 2020-03-18 | サーパス工業株式会社 | 圧力検出装置 |
CN109069840B (zh) | 2016-02-04 | 2022-03-15 | 心脏起搏器股份公司 | 具有用于无引线心脏装置的力传感器的递送*** |
US9869598B1 (en) * | 2016-06-24 | 2018-01-16 | Honeywell International Inc. | Low cost small force sensor |
GB2552025B (en) | 2016-07-08 | 2020-08-12 | Sovex Ltd | Boom conveyor |
US20180180494A1 (en) | 2016-12-22 | 2018-06-28 | Honeywell International Inc. | High Sensitivity Silicon Piezoresistor Force Sensor |
US10036676B1 (en) * | 2017-03-15 | 2018-07-31 | Honeywell International Inc. | Microelectromechanical systems (MEMS) force die with buried cavity vented to the edges |
US10436664B2 (en) * | 2017-05-24 | 2019-10-08 | Honeywell International Inc. | Micro flexible force sensor |
US10330540B2 (en) | 2017-08-22 | 2019-06-25 | Honeywell International Inc. | Force sensor |
US10724910B2 (en) * | 2018-07-20 | 2020-07-28 | Honeywell International Inc. | Miniature size force sensor with multiple coupling technology |
US11156511B2 (en) | 2019-04-09 | 2021-10-26 | Honeywell International Inc. | Load cell |
US11541901B2 (en) | 2019-10-25 | 2023-01-03 | Faurecia Interior Systems, Inc. | Opening switch for a vehicle |
CN114688410B (zh) * | 2022-03-30 | 2023-08-25 | 杭州任达荷重监控技术有限公司 | 一种带有附着式传感器安装通孔的轴载荷监控支架 |
Citations (3)
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US6401545B1 (en) * | 2000-01-25 | 2002-06-11 | Motorola, Inc. | Micro electro-mechanical system sensor with selective encapsulation and method therefor |
CN101089567A (zh) * | 2006-06-14 | 2007-12-19 | 大连理工大学 | 梁环式力传感器 |
CN101393045A (zh) * | 2007-09-20 | 2009-03-25 | 株式会社山武 | 流量传感器及其制造方法 |
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DE3049347C2 (de) * | 1980-12-29 | 1985-10-10 | Siemens AG, 1000 Berlin und 8000 München | Lagerstatt für einen Patienten mit piezoelektrischem Kraftsignalgeber |
US4510814A (en) | 1982-04-01 | 1985-04-16 | Deere & Company | Snap-in force sensor with bellows |
JPS59155734A (ja) * | 1983-02-25 | 1984-09-04 | Nec Corp | 力変換器 |
JPS63196080A (ja) | 1987-02-09 | 1988-08-15 | Nec Corp | 半導体力センサ及びそれを用いた触覚センサ |
US4934860A (en) | 1988-07-13 | 1990-06-19 | Honeywell Inc. | Pivotal shaft frictionless support arrangement |
EP0426171A3 (en) * | 1989-11-01 | 1992-08-26 | Matsushita Electronics Corporation | Semiconductor pressing force sensor |
US5223776A (en) * | 1990-12-31 | 1993-06-29 | Honeywell Inc. | Six-degree virtual pivot controller |
US5184107A (en) * | 1991-01-28 | 1993-02-02 | Honeywell, Inc. | Piezoresistive pressure transducer with a conductive elastomeric seal |
US5303593A (en) * | 1991-06-07 | 1994-04-19 | Maclean-Fogg Company | Strain gauge distribution for resistive strain gauge pressure sensor |
US5187985A (en) * | 1991-09-19 | 1993-02-23 | Honeywell Inc. | Amplified pressure transducer |
US5661245A (en) * | 1995-07-14 | 1997-08-26 | Sensym, Incorporated | Force sensor assembly with integrated rigid, movable interface for transferring force to a responsive medium |
EP0800070B1 (fr) * | 1996-04-04 | 2001-08-22 | Ssi Technologies, Inc. | Ensemble capteur de pression et son procédé de fabrication |
US5744726A (en) * | 1997-02-25 | 1998-04-28 | Honeywell Inc. | Pressure sensor with reduced dead space achieved through an insert member with a surface groove |
US5760313A (en) * | 1997-03-05 | 1998-06-02 | Honeywell Inc. | Force sensor with multiple piece actuation system |
WO1999019704A1 (fr) | 1997-10-10 | 1999-04-22 | Novatrix, Inc. | Capteurs de pression a semi-conducteur noye, tocodynamometres |
US6311561B1 (en) * | 1997-12-22 | 2001-11-06 | Rosemount Aerospace Inc. | Media compatible pressure sensor |
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US6736015B1 (en) * | 2002-11-04 | 2004-05-18 | The United States Of America As Represented By The Secretary Of The Air Force | Robust, wireless microelectro mechanical system (MEMS) shear force sensor |
DE10324139B4 (de) * | 2003-05-26 | 2005-07-21 | Infineon Technologies Ag | Mikroelektromechanisches Bauteil und Verfahren zu seiner Herstellung |
US6927482B1 (en) | 2003-10-01 | 2005-08-09 | General Electric Company | Surface mount package and method for forming multi-chip microsensor device |
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US7880247B2 (en) * | 2003-12-29 | 2011-02-01 | Vladimir Vaganov | Semiconductor input control device |
JP4708711B2 (ja) * | 2004-02-03 | 2011-06-22 | 株式会社デンソー | 圧力センサ |
EP1721173B1 (fr) * | 2004-03-02 | 2008-05-07 | ETH Zürich | Capteur de force |
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EP2282180A1 (fr) * | 2007-09-20 | 2011-02-09 | Yamatake Corporation | Capteur de débit et procédure de fabrication associée |
JP4605232B2 (ja) * | 2008-02-21 | 2011-01-05 | 株式会社デンソー | 荷重センサ及びその製造方法 |
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US7775127B2 (en) * | 2008-12-23 | 2010-08-17 | Honeywell International Inc. | Method and system for measuring flow at patient utilizing differential force sensor |
-
2009
- 2009-07-02 US US12/497,299 patent/US8327715B2/en active Active
-
2010
- 2010-06-28 EP EP10167539.5A patent/EP2270455B1/fr active Active
- 2010-07-01 CN CN201010250150.XA patent/CN101943617B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6401545B1 (en) * | 2000-01-25 | 2002-06-11 | Motorola, Inc. | Micro electro-mechanical system sensor with selective encapsulation and method therefor |
CN101089567A (zh) * | 2006-06-14 | 2007-12-19 | 大连理工大学 | 梁环式力传感器 |
CN101393045A (zh) * | 2007-09-20 | 2009-03-25 | 株式会社山武 | 流量传感器及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102656464B1 (ko) * | 2017-02-01 | 2024-04-09 | 허니웰 인터내셔날 인코포레이티드 | 멤브레인 절연형 겔 충전식 힘 센서 |
Also Published As
Publication number | Publication date |
---|---|
CN101943617A (zh) | 2011-01-12 |
EP2270455A2 (fr) | 2011-01-05 |
US20110000318A1 (en) | 2011-01-06 |
US8327715B2 (en) | 2012-12-11 |
EP2270455A3 (fr) | 2014-07-02 |
EP2270455B1 (fr) | 2017-06-14 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150805 Termination date: 20190701 |