CN101937959A - Light-emitting diode with light filtering film and manufacturing method thereof - Google Patents
Light-emitting diode with light filtering film and manufacturing method thereof Download PDFInfo
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- CN101937959A CN101937959A CN 201010251825 CN201010251825A CN101937959A CN 101937959 A CN101937959 A CN 101937959A CN 201010251825 CN201010251825 CN 201010251825 CN 201010251825 A CN201010251825 A CN 201010251825A CN 101937959 A CN101937959 A CN 101937959A
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Abstract
The invention discloses a light-emitting diode with a light filtering film. A gallium-nitride-based light-emitting diode is used for processing P and N electrodes in a normal process, an electron beam evaporation or ion beam sputtering coating system is used for growing a wavelength pass filtering film layer outside P and N electrode areas of the light-emitting diode, and the wavelength pass filtering film layer has a stopping function for short-wavelength light, such as ultraviolet light, and the like and high transmissivity for long-wavelength light. Because short-wavelength light can accelerate the ageing of an LED (Light-Emitting Diode) packaging material, when being packaged, an LED chip with a long wavelength pass filtering film layer structure effectively reduces light decay of the LED, ensures reliability, consistency and service life of the LED, simplifies extended structure design and shortens extended research and development time at the same time.
Description
Technical field
The present invention relates to optical field, especially a kind of light-emitting diode and manufacture method thereof with filter coating.
Background technology
Semiconductor light-emitting-diode (LED:Light Emitting Diode) is converted into luminous energy with electric energy, is characterized in that energy consumption is low, life-span length, rich color, processing procedure environmental protection.White light LEDs be considered to replace fluorescent lamps and incandescent lamp the 4th generation mains lighting supply.
A kind of traditional approach that forms white light LEDs is to cover the gold-tinted fluorescent material above the chip and colour mixture forms white light by blue-light excited.Conventional white light LEDs Lamp encapsulating structure, for the small-power white light LEDs, led chip is fixed in the reflector of support, elargol or epoxy resin are coated in the reflector bottom, they can adhere to, fixed chip, on blue-light LED chip, be coated with the gold-tinted fluorescent material of application epoxy resin allotment, last whole reflector and chip epoxy sealing, the centre does not have air.
In fact the white light LEDs light decay of this encapsulating structure is serious, and this is because epoxy resin under the radiation and heat effect of short wavelength light, can produce xanthochromia, causes luminous flux to descend; Because the scattering process of fluorescent powder grain causes blue light to carry out scattering repeatedly in the fluorescent material glue-line, cause the very fast xanthochromia of epoxy resin that mixes with fluorescent material on the other hand.The therefore theoretical life-span is 100000 hours LED, and generally at 1000 hours, its light decay just reaches 30%, thereby light decay becomes the bottleneck that restriction LED uses.The home and abroad Packaging Industry also has between led chip and fluorescent material increases one deck silica gel or other heat insulation photic zone reaches the purpose that reduces light decay, but this measure increases the technical difficulty of encapsulation, has improved the cost of encapsulation.
Conventional indigo plant, green light LED Lamp encapsulating structure and the encapsulation of above-mentioned white light are similar, just do not add gold-tinted fluorescent material, all need the encapsulation of epoxy resin, therefore all have same light decay problem, and just light decay is compared low than white light.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode with filter coating, solved the serious problem of light decay that exists in the existing LED encapsulating structure, increase one deck long-pass filter coating on the led chip surface, simplify the development time of the structural design and the shortening extension of extension.
Technical scheme of the present invention is: a kind of light-emitting diode with filter coating, and this device comprises substrate successively, is n type gallium nitride layer, luminescent layer multi-quantum pit structure MQW, P type gallium nitride layer successively on the substrate; Transparency conducting layer is positioned on the subregion of P type epitaxy of gallium nitride, and the LED P electrode is positioned on the subregion of transparency conducting layer, and forms ohmic contact with P type gallium nitride; The N electrode is positioned on the subregion of described n type gallium nitride epitaxial loayer; Filter coating is positioned on above-mentioned P electrode metal and the N electrode metal zone in addition.
Filter coating to less than the light transmission rate of 400nm wavelength less than 15%, filter coating can reach more than 85% the light transmission greater than the 440nm wavelength.Filter coating obtains by electron beam evaporation plating or ion beam sputtering deposition system.Filter coating is made up of the number layer film.The material of filter coating comprises one or more, comprising: ZnS, ZnSe, Ge, PbTe, Pb1-xGexTe, Ta2O5, SiO2, TiO
x
The band filter coating manufacturing method for LED, the steps include: 1, on epitaxial layer of gallium nitride the etching part epitaxial loayer, comprise P type gallium nitride layer 106, luminescent layer multi-quantum pit structure MQW 105, etch depth is to n type gallium nitride layer 102; 2, deposit transparent conductive layer 107 on LED P-type gallium nitride layer 106; 3, difference depositing light-emitting diode P, N electrode metal 104,108; 4, removing LED P, N electrode with exterior domain, by electron beam evaporation plating or ion beam sputtering deposition system growth filter membranous layer 103; 5, by attenuate, draw split, test, sorting, form each independently luminescent device respectively.
The invention has the advantages that: the invention solves the serious problem of light decay that exists in the existing LED encapsulating structure, a kind of brand-new chip structure has been proposed: increase one deck long-pass filter coating on the led chip surface, its effect is to make the light greater than a certain specific wavelength have high transmittance, and is cut off less than the light of this wavelength.On indigo plant, green light LED chip, the light that makes wavelength be lower than 400nm exactly is cut off, and transmissivity is less than 15%, and the light that makes wavelength be higher than 440nm is high transmittance, and transmissivity reaches more than 85%.Here 400nm master's film is the performance decision of wavelength by light-transmissive film, just by film material, structure, thickness decision, therefore can regulate.Short wavelength's ultraviolet light just can not see through a little films like this, thereby in follow-up encapsulation, epoxy resin just can not be subjected to ultraviolet irradiation and flavescence, has reduced the light decay of LED.Because filter coating deposited in the led chip fabrication stage, therefore do not influence the flow process of follow-up encapsulation.Owing to set up filter coating, epitaxially grown the focusing on of GaN considered to increase brightness, and needn't consider the influence of other wavelength to light decay, therefore simplifies the structural design and the development time that shortens extension of extension on the other hand.
Flow process of the present invention and conventional galliumnitride base LED chip manufacturing process are basic identical, just last electron beam evaporation plating or the ion beam sputtering deposition growth filter coating of increasing, therefore except that increasing electron beam evaporation plating or ion beam sputtering deposition equipment, can utilize existing equipment and technology fully, the production compatibility is good, the convenience that epitaxial growth is provided simultaneously, any adjustment is not done in follow-up encapsulation, so this product can put into production very soon.
Description of drawings
Fig. 1 is the light emitting diode construction schematic diagram of band filter coating of the present invention.
Among the figure:
101 Sapphire Substrate, 102N type GaN layer, 103 light-transmissive films, 104N electrode, 105 Multiple Quantum Well, 106P type GaN layer, 107 transparency conducting layers, 108P electrode.
Embodiment
Below in conjunction with drawings and Examples the present invention is done a detailed process explanation.
More traditional led chip has increased operations such as filter coating in the chip manufacturing proces of band filter coating LED of the present invention, and existing chip manufacturing proces is done an explanation.
Step 1: etching part epitaxial loayer on epitaxial layer of gallium nitride, comprise P type gallium nitride layer 106, luminescent layer multi-quantum pit structure MQW 105, etch depth is to n type gallium nitride layer 102;
Step 2: deposit transparent conductive layer 107 on LED P-type gallium nitride layer 106;
Step 3: difference depositing light-emitting diode P, N electrode metal 104,108;
Step 4: removing LED P, N electrode with exterior domain, by electron beam evaporation plating or ion beam sputtering deposition system growth filter membranous layer 103;
Step 5: by attenuate, draw split, test, sorting, form each independently luminescent device respectively.
Claims (6)
1. light-emitting diode with filter coating, it is characterized in that: this device comprises substrate successively, is n type gallium nitride layer, luminescent layer multi-quantum pit structure MQW, P type gallium nitride layer successively on the substrate; Transparency conducting layer is positioned on the subregion of P type epitaxy of gallium nitride, and the LED P electrode is positioned on the subregion of transparency conducting layer, and forms ohmic contact with P type gallium nitride; The N electrode is positioned on the subregion of described n type gallium nitride epitaxial loayer; Filter coating is positioned on above-mentioned P electrode metal and the N electrode metal zone in addition.
2. according to the light-emitting diode of the described band filter coating of claim 1, it is characterized in that: filter coating to less than the light transmission rate of 400nm wavelength less than 15%, filter coating can reach more than 85% the light transmission greater than the 440nm wavelength.
3. according to the light-emitting diode of the described band filter coating of claim 1, it is characterized in that: filter coating obtains by electron beam evaporation plating or ion beam sputtering deposition system.
4. according to the light-emitting diode of the described band filter coating of claim 1, it is characterized in that: filter coating is made up of the number layer film.
5. according to the light-emitting diode of the described band filter coating of claim 4, it is characterized in that: the material of filter coating comprises one or more, comprising: ZnS, ZnSe, Ge, PbTe, Pb1-xGexTe, Ta2O5, SiO2, TiO
x
6. according to the light-emitting diode of the described band filter coating of claim 1, it is characterized in that: this manufacturing method for LED the steps include:
(1), on epitaxial layer of gallium nitride the etching part epitaxial loayer, comprise P type gallium nitride layer 106, luminescent layer multi-quantum pit structure MQW 105, etch depth is to n type gallium nitride layer 102;
(2), deposit transparent conductive layer 107 on LED P-type gallium nitride layer 106;
(3), difference depositing light-emitting diode P, N electrode metal 104,108;
(4), removing LED P, N electrode with exterior domain, by electron beam evaporation plating or ion beam sputtering deposition system growth filter membranous layer 103;
(5), by attenuate, draw split, test, sorting, form each independently luminescent device respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010251825 CN101937959A (en) | 2010-08-12 | 2010-08-12 | Light-emitting diode with light filtering film and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010251825 CN101937959A (en) | 2010-08-12 | 2010-08-12 | Light-emitting diode with light filtering film and manufacturing method thereof |
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| CN101937959A true CN101937959A (en) | 2011-01-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010251825 Pending CN101937959A (en) | 2010-08-12 | 2010-08-12 | Light-emitting diode with light filtering film and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742377A (en) * | 2016-02-22 | 2016-07-06 | 中山大学 | Photoelectric detector with band-pass filtering function for visible light communication |
| CN105759331A (en) * | 2015-12-01 | 2016-07-13 | 中国科学院上海技术物理研究所 | Medium wave infrared filter based on lead germanium tellurium high refractive index material |
| CN110582551A (en) * | 2017-03-28 | 2019-12-17 | 纳米***公司 | Method for increasing light output of micro LED device using quantum dots |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113233A (en) * | 1988-09-02 | 1992-05-12 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
| US6696704B1 (en) * | 1999-01-11 | 2004-02-24 | Matsushita Electric Industrial Co., Ltd. | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
| CN201146194Y (en) * | 2007-10-24 | 2008-11-05 | 亿光电子工业股份有限公司 | LED capable of filtering ultraviolet waveband |
| WO2008153120A1 (en) * | 2007-06-15 | 2008-12-18 | Rohm Co., Ltd. | White light-emitting device and method of forming white light-emitting device |
-
2010
- 2010-08-12 CN CN 201010251825 patent/CN101937959A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113233A (en) * | 1988-09-02 | 1992-05-12 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
| US6696704B1 (en) * | 1999-01-11 | 2004-02-24 | Matsushita Electric Industrial Co., Ltd. | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
| WO2008153120A1 (en) * | 2007-06-15 | 2008-12-18 | Rohm Co., Ltd. | White light-emitting device and method of forming white light-emitting device |
| CN201146194Y (en) * | 2007-10-24 | 2008-11-05 | 亿光电子工业股份有限公司 | LED capable of filtering ultraviolet waveband |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105759331A (en) * | 2015-12-01 | 2016-07-13 | 中国科学院上海技术物理研究所 | Medium wave infrared filter based on lead germanium tellurium high refractive index material |
| CN105742377A (en) * | 2016-02-22 | 2016-07-06 | 中山大学 | Photoelectric detector with band-pass filtering function for visible light communication |
| CN105742377B (en) * | 2016-02-22 | 2018-01-05 | 中山大学 | A kind of visible light communication photodetector with band-pass filtering function |
| CN110582551A (en) * | 2017-03-28 | 2019-12-17 | 纳米***公司 | Method for increasing light output of micro LED device using quantum dots |
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Application publication date: 20110105 |