CN101907635A - Method for manufacturing acceleration transducer - Google Patents
Method for manufacturing acceleration transducer Download PDFInfo
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- CN101907635A CN101907635A CN 201010227927 CN201010227927A CN101907635A CN 101907635 A CN101907635 A CN 101907635A CN 201010227927 CN201010227927 CN 201010227927 CN 201010227927 A CN201010227927 A CN 201010227927A CN 101907635 A CN101907635 A CN 101907635A
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- acceleration transducer
- grooves
- sacrificial layer
- sacrifice layer
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Abstract
The invention provides a method for manufacturing an acceleration transducer. The method comprises the following steps of: providing a monocrystalline silicon substrate; depositing an insulating layer on the monocrystalline silicon substrate; depositing a sacrificial layer on the insulating layer; etching out a plurality of grooves on the surface of the sacrificial layer by using photo-etching to ensure that the grooves penetrate through the whole sacrificial layer to the insulating layer; depositing polycrystalline silicon on the sacrificial layer after etching and in the grooves to ensure that concave holes corresponding to the plurality of grooves are formed on the surface of the polycrystalline silicon; and etching out a plurality of gaps between two adjacent concave holes by using the photo-etching to obtain a needed structure, and releasing the sacrificial layer. The method has the advantages of low production cost and flexible design.
Description
[technical field]
The present invention relates to a kind of method of making sensor, relate in particular to a kind of method of making acceleration transducer.
[background technology]
Along with science and technology development, acceleration transducer is applied in all kinds of portable type electronic products, for example more and more: mobile phone, camera, video camera, game machine and notebook computer etc.It can measure the accelerating force of moving object on certain direction in the space well, and then obtains the information of its motion, and makes feedback.
SOI (Silicon On Insulator, silicon on the dielectric substrate), be the present comparatively manufacturing single shaft of widespread use or the method for double-axel acceleration sensor, it is that the method that layer of oxide layer is set between semiconductor silicon and insulation course realizes, but the cost of this method is too high, be unfavorable for reducing production costs, be difficult to realize that the user is to the high-performance of product and requirement cheaply.
Therefore, be necessary to propose a kind of method of new manufacturing acceleration transducer.
[summary of the invention]
The technical matters that the present invention need solve is to provide a kind of low cost, makes product possess the method for the manufacturing acceleration transducer of design flexibility.
The present invention is by such technical scheme technical solution problem:
A kind of method of making acceleration transducer, wherein, this method comprises the steps:
A, provide a monocrystalline substrate;
B, on monocrystalline substrate depositing insulating layer;
C, on described insulation course deposition of sacrificial layer;
D, utilize photoetching to go out some grooves, make described groove run through whole sacrifice layer to insulation course in the surface etch of sacrifice layer;
Reach deposit spathic silicon in the groove on E, the sacrifice layer after being etched, make polysilicon surface form the shrinkage pool corresponding with some grooves;
F, between two adjacent concave holes, etch plurality of gaps with photoetching, thereby draw required structure;
G, releasing sacrificial layer.
As a kind of improvement of the present invention, described insulation course is to adopt the method for chemical vapor deposition and the Si that forms
3Ni
4Layer.
6, as a kind of improvement of the present invention, described sacrifice layer is to adopt the method for chemical vapor deposition and the phosphorosilicate glass layer or the Pyrex layer that form.
As a kind of improvement of the present invention, the number of described groove is two.
As a kind of improvement of the present invention, the release of described sacrifice layer adopts hydrofluorite to discharge.
The utlity model has following advantage: owing to utilize monocrystalline silicon to make acceleration transducer, just can reduce production costs greatly, simultaneously, also make the design of product possess dirigibility, can satisfy the requirement of user well to the product high performance-price ratio.
[description of drawings]
Fig. 1 to Fig. 6 makes the process flow diagram of the method for acceleration transducer for the present invention.
[embodiment]
The invention will be further described below in conjunction with drawings and embodiments.
The method of the acceleration transducer that the invention provides a kind of based single crystal silicon substrate and process.Fig. 1 is to Figure 6 shows that the present invention makes the method for acceleration transducer 10, and its concrete operations step is as follows:
A, as shown in Figure 1 provides a monocrystalline substrate 11, and depositing insulating layer 12 thereon, and in the present embodiment, this insulation course 12 is to adopt the method for chemical vapor deposition and the Si that forms
3Ni
4Layer;
B, as shown in Figure 2, deposition of sacrificial layer 13 on described insulation course 12, in the present embodiment, this sacrifice layer 13 is to adopt the method for chemical vapor deposition and the phosphorosilicate glass layer or the Pyrex layer that form;
C, as shown in Figure 3, utilize photoetching to etch some grooves 131 on the surface 130 of sacrifice layer 13, in the present embodiment, the number of groove 131 is two, and this groove 131 to extending away from this surperficial direction, makes it to run through whole sacrifice layer 13 to insulation course 12 from surface 130;
D, as shown in Figure 4, deposit spathic silicon 14 on the surface 130 of sacrifice layer 13 and in the groove 131, and on the surface 140 of polysilicon, form and some groove 130 corresponding shrinkage pools 141;
E, as shown in Figure 5 between two adjacent concave holes, etches plurality of gaps 141 with photoetching, thereby draws required structure;
F, utilize hydrofluorite to come releasing sacrificial layer 13, as shown in Figure 6, promptly be releasing sacrificial layer 13 after, the structure of the acceleration transducer 10 that finally obtains.
The chemical vapor deposition that is improved among the present invention is meant that reactive material issues biochemical reaction in the gaseous state condition, generates solid matter and is deposited on the solid matrix surface of heating, and then make the technology of solid material.
To sum up,, just can reduce production costs greatly, simultaneously, also make the design of product possess dirigibility, can satisfy the requirement of user well the product high performance-price ratio owing to utilize monocrystalline silicon to make acceleration transducer.
Above-described only is embodiments of the present invention, should be pointed out that for the person of ordinary skill of the art at this, under the prerequisite that does not break away from the invention design, can also make improvement, but these all belongs to protection scope of the present invention.
Claims (5)
1. method of making acceleration transducer, it is characterized in that: this method comprises the steps:
A, provide a monocrystalline substrate;
B, on monocrystalline substrate depositing insulating layer;
C, on described insulation course deposition of sacrificial layer;
D, utilize photoetching to go out some grooves, make described groove run through whole sacrifice layer to insulation course in the surface etch of sacrifice layer;
Reach deposit spathic silicon in the groove on E, the sacrifice layer after being etched, make polysilicon surface form the shrinkage pool corresponding with some grooves;
F, between two adjacent concave holes, etch plurality of gaps with photoetching, thereby draw required structure;
G, releasing sacrificial layer.
2. the method for manufacturing acceleration transducer according to claim 1 is characterized in that: described insulation course is to adopt the method for chemical vapor deposition and the Si that forms
3Ni
4Layer.
3. the method for manufacturing acceleration transducer according to claim 1 is characterized in that: described sacrifice layer is to adopt the method for chemical vapor deposition and the phosphorosilicate glass layer or the Pyrex layer that form.
4. the method for manufacturing acceleration transducer according to claim 1 is characterized in that: the number of described groove is two.
5. the method for manufacturing acceleration transducer according to claim 1 is characterized in that: the release of described sacrifice layer adopts hydrofluorite to discharge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010227927 CN101907635A (en) | 2010-07-15 | 2010-07-15 | Method for manufacturing acceleration transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010227927 CN101907635A (en) | 2010-07-15 | 2010-07-15 | Method for manufacturing acceleration transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101907635A true CN101907635A (en) | 2010-12-08 |
Family
ID=43263151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010227927 Pending CN101907635A (en) | 2010-07-15 | 2010-07-15 | Method for manufacturing acceleration transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101907635A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102680735A (en) * | 2011-02-01 | 2012-09-19 | 霍尼韦尔国际公司 | Edge-mounted sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1643701A (en) * | 2003-01-29 | 2005-07-20 | 三菱电机株式会社 | Semiconductor device manufacturing method and accelerator sensor |
-
2010
- 2010-07-15 CN CN 201010227927 patent/CN101907635A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1643701A (en) * | 2003-01-29 | 2005-07-20 | 三菱电机株式会社 | Semiconductor device manufacturing method and accelerator sensor |
Non-Patent Citations (1)
| Title |
|---|
| 《中国优秀博硕士学位论文全文数据库（硕士）信息科技辑》 20070515 肖鹏 基于MEMS技术的差分电容式加速度微传感器的研究和设计 , 第5期 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102680735A (en) * | 2011-02-01 | 2012-09-19 | 霍尼韦尔国际公司 | Edge-mounted sensor |
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Application publication date: 20101208 |