CN101903986A - Apparatus for particle removal by single-phase and two-phase media - Google Patents
Apparatus for particle removal by single-phase and two-phase media Download PDFInfo
- Publication number
- CN101903986A CN101903986A CN2008801221860A CN200880122186A CN101903986A CN 101903986 A CN101903986 A CN 101903986A CN 2008801221860 A CN2008801221860 A CN 2008801221860A CN 200880122186 A CN200880122186 A CN 200880122186A CN 101903986 A CN101903986 A CN 101903986A
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- cleaning material
- cleaning
- patterned substrate
- polymer
- substrate
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3723—Polyamines or polyalkyleneimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3769—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines
- C11D3/3773—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C11D2111/22—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Abstract
The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
Description
Background technology
In semiconductor device (such as integrated circuit, memory cell and so on) is made, carry out a series of manufacturing operations and limit feature to go up at semiconductor crystal wafer (" wafer ").This wafer (or substrate) is included in the integrated circuit (IC)-components of the sandwich construction form that limits on the silicon substrate.On substrate level, form transistor device with diffusion region.In following stages, interconnect metallization lines is patterned and is electrically connected in this transistor device to limit the integrated circuit (IC)-components of expectation.And, by conductive layer and other the conductive layer insulation of dielectric substance with patterning.
In a series of manufacturing operation processes, crystal column surface stands all contaminations.Any material that exists in the manufacturing operation in fact all is potential pollutant sources.For example, pollutant sources can comprise process gas, chemicals, deposition materials and fluid and other.All contaminations may be deposited on the crystal column surface with particulate form.If do not remove fume, pollutant device nearby can't be worked probably.Therefore, be necessary, in a kind of mode of not destroying the feature that limits on the wafer, from the crystal column surface clean contaminants.Yet the size of fume is usually on critical dimension (the critical dimension size) magnitude of the feature of making on the wafer.It is quite difficult removing so little fume and don't can causing negative effect to the feature on the wafer.
Traditional wafer cleaner method seriously relies on mechanical force and removes fume from crystal column surface.Along with characteristic size continues to reduce and the fragility more that becomes, cause the probability of feature infringement to increase owing on crystal column surface, applying mechanical force.For example, the feature with high aspect ratio (aspect ratio) is collapsed easily when being subjected to the impact of enough big mechanical force or is broken.The ever-reduced trend of characteristic size has also caused the size of fume to reduce, and makes cleaning problems complicated more.The zone that the fume that size is enough little may know one's way into and be difficult to arrive on the crystal column surface is in the groove that is centered on by high aspect ratio features.Therefore, in the modern semiconductors manufacture process, efficiently but not remove the lasting challenge that on behalf of the wafer cleaner continuous advancement in technology, pollutant will face devastatingly.As can be seen, the manufacturing operation of flat-panel monitor suffers to make identical shortcoming with said integrated circuit.
In view of more than, the needs of the apparatus and method of the cleaning patterned wafer that does not damage the feature on the patterned wafer for removing pollutant are effectively arranged.
Summary of the invention
Put it briefly, embodiments of the present invention provide clean wafer surface, especially improved material, the apparatus and method on the surface of patterned wafer (or substrate).Cleaning material discussed above, apparatus and method have the patterned substrate of fine feature and do not destroy this characteristic aspect basically in cleaning and have advantage.This cleaning material is a fluid, can be liquid phase or the liquid/gas two-phase, and around device feature distortion; Therefore, this cleaning material does not damage this device feature basically or reduces infringement greatly.This cleaning material (polymer that comprises one or more polymerizable compounds with macromolecule) is caught the pollutant on this substrate.For the polymer of being made by a monomer, this polymer comprises a polymerizable compound.For by surpassing the polymer that monomer is made, such as copolymer or mixture of polymers, this polymer comprises and surpasses a polymerizable compound.
In addition, this cleaning material is held back (entrap) pollutant and is not made pollutant get back to this substrate surface.Polymer with polymerizable compound of macromolecule forms long polymer chain, its can also cross-linked (cross-linked) to form network (or converging network).Can remove the molecular weight of polymer for the length of the polymer chain of not cross-linked or seldom cross-linked polymer basically by molecular weight and estimate (length～(weight of the molecular weight/monomer of polymer)) with monomeric substance.Compare with traditional cleaning material, long polymer chain and/or polymer network demonstrate the more powerful ability of capturing or hold back pollutant.Therefore, (fluid form) cleaning material that comprises such polymer demonstrates outstanding fine particle removing performance.The pollutant that is hunted down then or holds back is removed by the surface from this substrate.
As discussed above, each polymer can be cross-linked.Yet cross-linked degree is limited relatively in order to avoid make the really up to the mark or rigidity too of this polymer, and this can make polymer can not be dissolved in the solvent and make device feature distortion on this substrate surface.
Should be appreciated that the application can realize with multiple mode, comprises system, method and chamber.Creative execution modes more of the present invention are described below.
In one embodiment, provide a kind of cleaning systems of removing the lip-deep pollutant of the patterned substrate that limits integrated circuit (IC)-components.These cleaning systems comprise the substrate carrier at the edge that is used to support this patterned substrate.These cleaning systems also comprise the cleaning head that is placed in this patterned substrate top that is kept by this substrate carrier, and this cleaning head has on this surface of this patterned substrate that a plurality of distribution Kong Yixiang are used to limit integrated circuit (IC)-components distributes cleaning material.This cleaning material comprises molecular weight greater than 10, the polymer of the polymerizable compound of 000g/mol.This polymer is dissolvable in water in the solvent to form this cleaning material.This cleaning material had the metal pollutant less than 1/1000000000th (1ppb) before being applied on this surface of this patterned substrate.
This dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate.When power was applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material did not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant.This cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate.This cleaning head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material.Further, these cleaning systems comprise this surperficial supporting construction that is used to keep contiguous this patterned substrate of this cleaning head.
In another embodiment, provide a kind of cleaning systems that are used to distribute cleaning material with the lip-deep pollutant of removing the patterned substrate that is used to limit integrated circuit (IC)-components.These cleaning systems comprise the substrate support that is used to support this patterned substrate.This substrate support rotation is with this removal of contaminants from this patterned substrate in the clean process.These cleaning systems also comprise the distribution nozzle that is placed in this patterned substrate top, with this cleaning material of distribution on this patterned substrate that is used to limit integrated circuit (IC)-components.This cleaning material comprises molecular weight greater than 10, the polymer of the polymerizable compound of 000g/mol.This polymer is dissolvable in water in the solvent to form this cleaning material.This cleaning material had the metal pollutant less than 1ppb before being applied on this surface of this patterned substrate.
This dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate.When power was applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material did not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant.This cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate.This distribution head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material.
In another embodiment, provide a kind of cleaning systems that are used to remove the lip-deep pollutant of the patterned substrate that is used to limit integrated circuit (IC)-components.These cleaning systems comprise the substrate carrier that is used to support this patterned substrate.These cleaning systems also comprise and hold the cleaning slot that is used for from the cleaning material of this removal of contaminants of this patterned substrate of being used to limit integrated circuit (IC)-components.This cleaning material comprises molecular weight greater than 10, the polymer of the polymerizable compound of 000g/mol.This polymer is dissolvable in water in the solvent to form this cleaning material.This cleaning material had the metal pollutant less than 1ppb before being applied on this surface of this patterned substrate.
This dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate.When power was applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material did not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant.This cleaning material was not have the polishing property particulate basically before being applied on this surface of this patterned substrate.This distribution head is coupled in the memory of this cleaning material.Further, this cleaning material has the mechanical mechanism that is used for this patterned substrate dropped in this cleaning slot and mentions in this cleaning slot.
In another embodiment, provide a kind of cleaning material preparation system.This cleaning material preparation system comprises polymer container, and it holds polymer, and buffer reservoir, and it holds buffer.This cleaning material preparation system further comprises and is used to mix this polymer, this solvent and this buffer to prepare the mixer of this cleaning material.This mixer is coupled in this polymer container, this solvent container and this buffer reservoir.This cleaning material is the lip-deep pollutant that is used to remove the patterned substrate that is used to limit integrated circuit (IC)-components.This cleaning material comprises molecular weight greater than 10, and the polymer of the polymerizable compound of 000g/mol, this polymer are dissolvable in water solvent to form this cleaning material.This cleaning material had the metal pollutant less than 1/1000000000th (1ppb) before being applied on this surface of this patterned substrate.
This dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate.When power was applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material did not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant.This cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate.This cleaning head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material.
In another execution mode, provide a kind of cleaning material preparation system.This cleaning material preparation system comprises polymer container, and it holds polymer; And solvent container, it holds solvent.This cleaning material preparation system also comprises buffer and additive container, and it holds buffer and the additive that is used to make this cleaning material.This cleaning material preparation system further comprises and is used to prepare the mixture of this polymer, this solvent, this buffer and this additive to make first mixer of this cleaning material.This mixer is coupled in this polymer container, this solvent container and this buffer and additive container.In addition, this cleaning material preparation system comprises purifier, and this purifier is the system of purification from first mixture of this first mixer.This purifier is coupled in this first mixer.
In addition, this cleaning material preparation system comprises and being used for by mixing the adjustment container that this first mixture and other buffer and additive prepare this cleaning material.This adjustment container is coupled in this purifier.This cleaning material is used to remove the lip-deep pollutant of the patterned substrate that is used to limit integrated circuit (IC)-components.This cleaning material comprises molecular weight greater than 10, the polymer of the polymerizable compound of 000g/mol.This polymer is dissolvable in water solvent to form this cleaning material, and this cleaning material had the metal pollutant less than 1/1000000000th (1ppb) before being applied on this surface of this patterned substrate.This dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate.When power was applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material did not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant.This cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate.This cleaning head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material.
Description of drawings
By the detailed description of carrying out below in conjunction with accompanying drawing, can understand the present invention at an easy rate, and the similar structural detail of similar reference number representative.
Fig. 1 shown, according to an embodiment of the invention, and defective on the substrate and device feature.
Fig. 2 A shown, according to an embodiment of the invention, and the diagram of 3 response curves relevant with on patterned substrate, applying cleaning material.
Fig. 2 B has shown the diagram of 3 response curves relevant with apply cleaning material on patterned substrate.
Fig. 2 C has shown, according to an embodiment of the invention, for 3 diagrams that damage a force intensity curve of curve and cleaning material of different technologies node.
Fig. 3 A has shown, according to an embodiment of the invention, is dissolved in the cleaning material of the polymer of the polymerizable compound with macromolecule in the clean solution.
Fig. 3 B has shown that according to an embodiment of the invention, the cleaning material of Fig. 3 A is held back pollutant.
Fig. 3 C shown, according to an embodiment of the invention, the cleaning material of Fig. 3 A is distributed on the patterned wafer with from this substrate surface clean contaminants.
Fig. 3 D shown, according to an embodiment of the invention, the cleaning material of Fig. 3 A is distributed on the patterned wafer with from this substrate surface clean contaminants.
Fig. 3 E shown, according to an embodiment of the invention, the cleaning material of Fig. 3 A is distributed on the patterned wafer with groove and through hole with from this substrate surface clean contaminants.
Fig. 3 F has shown according to an embodiment of the invention, to have the cleaning material of the gel sample polymer drop that is emulsified in the clean solution.
Fig. 3 G has shown according to an embodiment of the invention, to have the cleaning material of the gel sample polymer clump (lump) that is suspended in the clean solution.
Fig. 3 H has shown the foamed cleaning material according to an embodiment of the invention.
Fig. 4 A shown, according to an embodiment of the invention, is used for the rough schematic view of vertical view of the system of clean substrate.
Fig. 4 B shown, according to an embodiment of the invention, has the upward view of the cleaning head in a plurality of distributions hole that is used to distribute this cleaning material.
Fig. 4 C shown, according to an embodiment of the invention, on the substrate surface under this cleaning head the end view of the cleaning head of the cleaning body of distribution cleaning material.
Fig. 4 D shown, according to an embodiment of the invention, and the viewgraph of cross-section of the cleaning head above substrate.
Fig. 4 E has shown the substrate cleaning systems according to an embodiment of the invention.
Fig. 4 F has shown, according to an embodiment of the invention, uses the cleaning device and the flusher that is used to rinse out cleaning material of the cleaning material clean substrate of the polymer that comprises the polymerizable compound with macromolecule.
Fig. 4 G has shown, according to an embodiment of the invention, uses the cleaning and the flusher of the cleaning material clean substrate of the polymer that comprises the polymerizable compound with macromolecule.
Fig. 4 H has shown the cleaning systems according to an embodiment of the invention.
Fig. 4 I shown, according to an embodiment of the invention, is used for the rough schematic view of vertical view of the system of clean substrate.
Fig. 4 J shown, according to an embodiment of the invention, and the cleaning head of Fig. 4 I and the upward view of syringe pipe.
Fig. 4 K has shown the system that is used for cleaning material preparation (preparation) according to an embodiment of the invention.
Fig. 5 A has shown that according to an embodiment of the invention, particulate is removed the function of the molecular weight of efficient (PRE) and polyacrylic acid (PAA) and hydroxyethylcellulose (HEC).
Fig. 5 B shown, according to an embodiment of the invention, and the function of the molecular weight of PRE and polyacrylamide (PAM).
Fig. 5 C shown, according to an embodiment of the invention, uses ammonium chloride to reduce the experimental result of the viscosity of the cleaning material made with polyacrylamide (PAM) polymer.
Fig. 6 A has shown, according to an embodiment of the invention, uses the technological process of the cleaning material cleaning patterned substrate of the polymer that comprises the polymerizable compound with HMW.
Fig. 6 B shown, according to an embodiment of the invention, and the technological process of purifying and cleaning material.
Fig. 6 C shown, according to another embodiment of the invention, and the technological process of purifying and cleaning material.
Embodiment
Description is used for clean wafer surface and the execution mode of the material of deface feature, method and apparatus not.Cleaning material discussed herein, the advantage of apparatus and method are that cleaning has the patterned substrate of fine feature and do not destroy this feature.This cleaning material is a fluid, liquid phase or liquid/gas phase, and can be around the device feature distortion; Therefore, this cleaning material does not damage device feature.This cleaning material (comprising the polymer with macromolecule polymerizable compound) is caught the pollutant on this substrate.In addition, this cleaning material is caught pollutant and is not made pollutant get back to this substrate surface.Polymer with polymerizable compound of macromolecule forms long polymer chain, its can also cross-linked (cross-linked) to form network (or converging network).Compare with traditional cleaning material, long polymer chain and/or polymer network demonstrate the ability of better catching and hold back pollutant.
Yet obviously, for a person skilled in the art, the application does not have in these details some or all still can realize.In other cases, the technological operation of knowing is not described in detail, in order to avoid unnecessarily fuzzy the present invention.
Each execution mode described herein provides cleaning material and the clean method that can remove pollutant effectively and not damage the feature on this patterned wafer, and the some of them wafer can comprise high aspect ratio features.Although each execution mode provides the specific embodiment of relevant semiconductor clean applications, yet these clean applications can be expanded to any technology that need remove pollutant from substrate.
Fig. 1 has shown according to an embodiment of the invention, to have the substrate 100 of substrate bulk 101.Device architecture 102 is arranged on substrate 101, particulate 103 is arranged surperficial 105 neighbours.Particulate 103 has approximate diameter 107, its can with the width 104 of device architecture 102 on the same order of magnitude.
For advanced person's technology, such as 65nm, 45nm, 32nm, 22nm and 16nm technology node, the width 104 of device architecture 102 is equal to or less than 65nm.The width of device architecture is such as the width 104 of device architecture 102, along with each technology node continues to dwindle to lay more device on limited chip surface area.For the consideration to resistivity, the height of this device architecture such as the height 106 of device architecture 102, does not usually dwindle with the width of device feature pro rata.For conductive structure,, make the width of structure and highly narrow down to make that resistivity increases too high and bring significant RC to postpone and this conductive structure is produced too many heat such as polysilicon line and metal interconnected.Therefore, device architecture such as structure 102, can have high aspect ratio, and this makes them might be applied in this structural power 111 infringements.In one embodiment, the aspect ratio of this device architecture can about 2 or bigger scope in.Power 112 is applied on the particulate 103 to help to remove particulate 103. Power 111 and 112 is applied on this substrate surface near the device architecture 102, to remove surface particle, such as particulate 103 by the cleaning material (not shown).In one embodiment, power 111 and 112 sizes are very approaching, because they are very close each other.The power 111,112 that is applied on this substrate surface can be from any relative motion between this cleaning material and this substrate surface.For example, it can be from the distribution of cleaning material or the flushing of this cleaning material.
The littler width 104 of device architecture 102 and the relative higher aspect ratio of device architecture 102 make device architecture 102 may be under the effect of the power 111 of breaking under the effect of the power 111 that applies or applying accumulation energy.Damaged device architecture 102 becomes particle sources and reduces yield.In addition, damaged device architecture 102 also may be owing to infringement becomes and can not work.
Fig. 2 A shown, according to an embodiment of the invention, and the diagram of 3 response curves relevant with on patterned substrate, applying cleaning material.Curve 201 has shown by cleaning material and has been applied to the intensity on this substrate surface and the contrast of energy (result of power).The peak value of the intensity of the cleaning energy that is applied by this cleaning material is at E
PCurve 202 has shown that particulate removes the function of the energy that efficient and this cleaning material apply on this substrate.This particulate is removed the peak value of speed at E
RNear.When the energy that is applied by this cleaning material reaches E
RThe time, this cleaning material is being the most efficiently when this substrate surface is removed particulate.Curve 203 has shown the function of amount and the energy that is applied at this substrate surface by this cleaning material of the infringement of the device architecture that is brought by this cleaning material.This device architecture is compromised at the Es point, and it is than the high terminal E of the energy that is applied on this substrate by cleaning material
NHigher.Because device architecture infringement curve 203 is outside this cleaning material is applied to Energy distribution 201 on this patterned substrate, so the device architecture on this patterned substrate can not be compromised.This particulate is removed curve 202 and is shown, this cleaning material can be removed particulate (or contact) and not damage structure on this substrate from this substrate surface.
Fig. 2 B has shown the diagram of 3 response curves relevant with apply cleaning material on patterned substrate.Curve 201 ' be is applied to the intensity on the patterned substrate and the contrast of energy by cleaning material.The peak value of the intensity that this cleaning material applies is at E
P'.Curve 202 ' shown particulate is removed speed and the contrast that is applied to the energy on this substrate.This particulate is removed the peak value of speed at E
R' near.When the energy that is applied by this cleaning material reaches E
RIn ' time, this cleaning material is being the most efficiently when this substrate surface is removed particulate.Curve 203 ' shown by cleaning material bring to the amount of the infringement of device architecture and the function of the energy that on this substrate surface, applies by this cleaning material.Device architecture on this substrate is compromised at Es ', and this is than the low side E of the Energy distribution of the energy that is applied by this cleaning material
N' high.Because device architecture infringement curve 203 ' Energy distribution 201 of cleaning material on being applied to this patterned substrate ' scope in, the device architecture on this patterned substrate can be damaged by this cleaning material and increase particulate (or defective).
As mentioned above, the infringement device architecture may cause this device not work in cleaner process, and damaged device architecture may be stayed on this substrate surface and reduce yield of devices.Therefore, the cleaning curve 201 of Fig. 2 B ' and the infringement curve 203 ' between relation be unwelcome.On the contrary, the relation between the cleaning curve 201 of Fig. 2 A and the infringement curve 203 is desirable.
Traditional substrate cleaning device and method comprise brush (brush) and liner (pad), and it utilizes mechanical force the process of removing particulate from this substrate surface.For the advanced technology of device architecture, may damage this device architecture by the mechanical force that brush and liner apply with very narrow width and very high aspect ratio.In addition, coarse brush and liner also may bring cut on this substrate surface.Utilize the clean technologies (such as million grades of ultrasonic clean and ultrasonic clean) of cavitation bubble and acoustic streaming clean substrate also may damage fragile structure.The clean technologies of use jet pipe and spray may cause the erosion of film, also may damage fragile structure.Fig. 2 C shown, according to an embodiment of the invention, and the cleaning curve 201 of the traditional cleaning material that applies by conventional method (such as million ultrasonic clean frequently) ".Infringement curve 203 at three technology node 90nm, 65nm and 45nm is arranged respectively
I, 203
IIWith 203
III Curve 203 for the patterned wafer of 90nm technology node
I, the outbreak of infringement starts from ENERGY E S
IES
IUpper end E greater than the Energy distribution of the cleaning material on this patterned substrate
N".Therefore, to the not infringement of this device architecture.Traditional cleaning material of Fig. 2 C is still possible for 65nm technology node, because the outbreak of infringement starts from ES
II, it is higher than E
N".Along with technology is stepped into narrower width, the outbreak of infringement starts from lower energy level.When the technology node becomes 45nm or when lower, curve 201 " traditional cleaning material and method can cause damage to device architecture.Outbreak ES for the infringement of 45nm technology node
IIIBe lower than E
N".Fig. 2 C shows that although some cleaning material and method are possible for conventional art, yet they are no longer possible for the more advanced technology with narrower characteristic width.Therefore, need find a kind of cleaning mechanism, it uses the technology for the advanced person, to this device architecture gentleness, and can remove the cleaning material of particulate effectively from this substrate surface.
Fig. 2 C shown, according to an embodiment of the invention, and the cleaning curve 201 of the traditional cleaning material that applies by conventional method (such as million ultrasonic clean frequently) ".For three technology nodes, 90nm, 65nm and 45nm are respectively by infringement curve 203
I, 203
IIWith 203
III Curve 203 for the patterned wafer of 90nm technology node
I, the outbreak of infringement starts from ENERGY E S
IES
IUpper end E greater than the Energy distribution of the cleaning material on this patterned substrate
N".Therefore, to the not infringement of this device architecture.Traditional cleaning material of Fig. 2 C is still possible for 65nm technology node, because the outbreak of infringement starts from ES
II, it is higher than E
N".Along with technology is stepped into narrower width, the outbreak of infringement starts from lower energy level.When the technology node becomes 45nm or when lower, curve 201 " traditional cleaning material and method can cause damage to device architecture.For, the outbreak ES of 45nm technology node infringement
III, be lower than E
N".Fig. 2 C shows that although some cleaning material and method are possible for conventional art, yet they are no longer possible for the more advanced technology with narrower characteristic width.Therefore, need find a kind of cleaning mechanism, it uses for more advanced technology, to this device architecture gentleness, and can remove the cleaning material of particulate effectively from this substrate surface.
Fig. 3 A has shown that according to the cleaning liquid material 300 of an embodiment of the invention, it comprises the clean solution 305 that is dissolved in the polymer with macromolecule 310 in the clean solution 305.In one embodiment, this cleaning liquid material 300 is gels.In another embodiment, this cleaning liquid material 300 is a colloidal sol.In another execution mode, this cleaning liquid material 300 is a liquid solution.This cleaning liquid material 300 when putting on when substrate surface has on the substrate of particulate, can be removed the particulate on this substrate surface.In one embodiment, the particulate of removing 320 is attached to polymer 310, shown in Fig. 3 B.(such as greater than 10,000g/mol or 100, the polymer of polymerizable compound 000g/mol) form very long polymer chain and converging network is got back to this substrate surface to catch and to hold back the particulate of removing to stop particulate to have macromolecule.This polymer is dissolved in clean solution, and it comprises the element that influences the pH value, and improves the solubility of polymer.The polymer that is dissolved in the clean solution can be soft gel or become the gel sample drop that is suspended in this clean solution.In one embodiment, when polymer molecule entered the near zone of pollutant, the pollutant on this substrate surface was by ionic forces, van der Waals power, electrostatic force, hydrophobic effect, space behavior or chemical bond and attached on the dissolved polymers.This pollutant is caught and held back to this polymer.
In one embodiment, this polymer with polymerizable compound of macromolecule forms network in clean solution 305.In addition, has this polymer dispersed of polymerizable compound of macromolecule in cleaning liquid solution 305.In cleaning course, cleaning liquid material 300 is gentle (gentle) on the device architecture of this substrate.Polymer 310 in the cleaning material 300 can center on this device architecture (such as structure 302) and slide, and shown in the cleaning volume 330 of Fig. 3 C, and can not produce powerful the impact to device architecture 302.On the contrary, hard brush above-mentioned and liner can contact and damage this device architecture with device architecture is confronted the tough with toughnees.The high speed impact of liquid also may be damaged this device architecture in power (or energy) that cavitation in million grades of ultrasonic clean produces and the jet pipe spray process.Alternatively, surpassing a kind of polymer can be dissolved in this clean solution to prepare this cleaning material.For example, the polymer in this cleaning material can comprise " A " polymerizable compound and " B " polymerizable compound.
Polymer with polymerizable compound of macromolecule forms the long-chain of polymer, has or does not have cross-linked (cross-linking) to form converging network.Shown in Fig. 3 C, polymer 310 with the pollutant on patterning (or the not patterning) substrate surface (such as pollutant 320
I, 320
II, 320
III, 320
IV) contact and catch pollutant.After pollutant was caught by this polymer, pollutant became and is attached to this polymer and is suspended in this cleaning material.Fig. 3 C shows, pollutant 320
III, 320
IVBe attached to polymer chain 311 respectively
I, 311
II Pollutant 320
IWith 320
IIIBe attached to other polymer chain.Alternatively, pollutant 320
I, 320
II, 320
III, 320
IVEach can be attached to a plurality of polymer chains, or is attached to a converging network.When the polymer in the cleaning material 300 by when this substrate surface is removed, such as by flushing, the pollutant that is attached to polymer chain is removed from this substrate with this polymer chain.
The execution mode that shows among Fig. 3 C has only shown a device architecture 302.According to an embodiment of the invention, on a substrate (such as substrate 301), many device architectures are (such as 302
I, 302
II, 302
III, 302
IVShown in can image pattern 3D like that each other by clustering round together.Be similar to Fig. 3 C, the cleaning volume 330 ' in cleaning liquid material 300 in cleaning course, on the device architecture on this substrate, be gentle.Polymer 310 in the cleaning material 300 is around device architecture 302
I, 302
II, 302
IIIWith 302
IVSlide, and this device architecture is not produced powerful the impact.Be similar to the pollutant that is attached to polymer chain 320 of Fig. 3 C
I, 320
II, 320
IIIWith 320
IV, pollutant 325
I, 325
II, 325
IIIWith 325
IVAlso be attached to polymer chain.
Except cleaning had the substrate (such as shown in Fig. 3 C and the 3D those) of line feature, the substrate with other patterned features also can be by material of the present invention and method cleaning.Fig. 3 E shown, according to an embodiment of the invention, have the structure 302 that forms through hole 315 and groove 316 ' substrate 301 '.Pollutant 326
I, 326
II, 326
IIIWith 326
IVAlso can remove by cleaning material 300 by the mechanism of discussing among Fig. 3 C and the 3D in the above.In one embodiment, this polymer serves as flocculant (flocculant), and it can make the particulate (or pollutant) from this substrate surface become floating block (floc), and floating block is to assemble the heap that forms by tiny suspended particulates.In another embodiment, this polymer does not serve as flocculant.
As mentioned above, has the polymer dispersed of polymerizable compound of macromolecule in this clean solution.Embodiment with polymerizable compound of macromolecule includes but not limited to, acrylate copolymer is such as polyacrylamide (PAM) and polyacrylic acid (PAA), such as carbopol 940
TMWith carbopol 941
TM, poly--(nitrogen, nitrogen-dimethyl-acrylamide) (pDMAAm), poly--(nitrogen-isopropyl-acrylamide) (PIPAAm), polymethylacrylic acid (PMAA), PMAm (PMAAm); Polyamine and oxide are such as polymine (PEI), poly(ethylene oxide) (PEO), PPOX (PPO) or the like; Polyvinyl is such as polyvinyl alcohol (PVA), polyvinyl sulfonic acid (PESA), polyvinylamine (PVAm), polyethylene-pyrrolidones (PVP), poly--4-vinyl pyrimidine (P4VP) or the like; Cellulose derivative is such as methylcellulose (MC), ethyl-cellulose (EC), hydroxyethylcellulose (HEC), carboxymethyl cellulose (CMC) or the like; Glycan is such as gum arabic, agar and agarose, heparin, guar gum, xanthans or the like; Protein is such as endosperm, collagen, glutelin or the like.Below describe some examples of this polymer architecture, polyacrylamide is a kind of acrylate polymer (CH that is formed by the acrylamide subunit
2CHCONH
2-) n.Polyvinyl alcohol is a kind of polymer (CH that is formed by the vinyl alcohol subunit
2CHOH-) m.Polyacrylic acid is a kind of polymer (CH that is formed by the acrylic acid subunit
2=CH-COOH-) o." n ", " m " and " o " are integers.Polymer water soluble with polymerizable compound of macromolecule becomes solution or highly suction, forms soft gel in the solution to become at water.In one embodiment, the molecular weight of this polymerizable compound is greater than 100,000g/mol.In another embodiment, the molecular weight of this polymerizable compound arrives between about 100M g/mol at about 0.1M g/mol.In another embodiment, the molecular weight of this polymerizable compound arrives between about 20Mg/mol at about 1M g/mol.In another execution mode, the molecular weight of this polymerizable compound arrives between about 20M g/mol at about 15M g/mol.In one embodiment, the percentage by weight of the polymer in this cleaning material is between about 0.001% to about 20%.In another embodiment, this percentage by weight is between about 0.001% to about 10%.In another embodiment, this percentage by weight is between about 0.01% to about 10%.In another execution mode, this percentage by weight is between about 0.05% to about 5%.This polymer can be dissolved in this clean solution, be dispersed in this clean solution fully, forms drop (emulsification) or form agglomerate in this clean solution in this clean solution.
Alternatively, this polymer can be a copolymer, and it stems from two or more monomeric substances.For example, this copolymer can comprise 90% PAM and 10% PAA, and is that monomer by PAM and PAA constitutes.In addition, this polymer can be the mixture of polymers of two or more types.For example, this polymer can be to make by two types polymer (PAM such as 90% and 10% PAA) is mixed in solvent.
In the execution mode shown in Fig. 3 A-3C, the polymer with polymerizable compound of macromolecule is dissolved in this clean solution equably.The base fluid of this clean solution, or solvent can be that a kind of nonpolar liquid (such as rosin) or polar liquid are (such as water (H
2O)).Other example of solvent comprises isopropyl alcohol (IPA), methyl-sulfoxide (DMSO) and dimethyl formamide (DMF).In one embodiment, this solvent comprises above a kind of liquid, is two or more mixtures of liquids.For the polymer that polarity is arranged, such as PAM, PAA or PVA, the suitable solvent of this clean solution is a polar liquid, such as water (H
2O).
In another embodiment, this clean solution comprises the compound except solvent (such as water), and to revise the character of this cleaning material, it forms by polymer is mixed in this clean solution.For example, this clean solution can comprise buffer, and this buffer can be weak acid or weak base, with acid-base value (pH) value of the cleaning material adjusting this clean solution and formed by this clean solution.An embodiment of weak acid is a citric acid.An embodiment of weak base is ammonium (NH
4OH).The pH value of this cleaning material is between about 1 to about 12.In one embodiment, for front end applications (before copper and inter-metal dielectric deposition), this cleaning material is alkaline.In one embodiment, for this pH value of front end applications between about 7 to about 12.In another embodiment, for this pH value of front end applications between about 8 to about 11.In another execution mode, for this pH value of front end applications between about 8 to about 10.For back-end processing (after copper and inter-metal dielectric deposition), in one embodiment, this clean solution is weakly alkaline, neutral or acid.Copper is incompatible with the aqueous slkali that ammonium is arranged in backend interconnect, has the aqueous slkali of ammonium can attack copper.In one embodiment, for this pH value of backend application between about 1 to about 7.In another embodiment, for this pH value of backend application between about 1 to about 5.In another execution mode, for this pH value of backend application between about 1 to about 2.In another embodiment, this clean solution comprises surfactant, such as ammonium lauryl sulfate (ADS) to help this polymer dispersed in this clean solution.In one embodiment, this surfactant also helps the cleaning material on moistening this substrate surface.The moistening permission cleaning material of this cleaning material on this substrate surface and this substrate surface closely contact with particulate on this substrate surface.The moistening cleaning efficiency that improved.Can also add other additive to improve surface wettability, substrate cleaning, flushing and other correlation properties.
The embodiment of buffering clean solution (or clean solution) comprises buffering ammonium salt solution (BAS) in this solution, it comprises alkalescence and acid buffer agent, such as the NH4OH of 0.44wt% and the citric acid of 0.4wt%.Alternatively, this cushioning liquid (such as BAS) comprises certain amount of surfactant, such as the ADS of 1wt%, to help this polymer suspension and to be dispersed in this clean solution.The solution that comprises the citric acid of the NH3 of ADS, 0.44wt% of 1wt% and 0.4wt% is called as solution " 100 ".The pH value of solution " 100 " and BAS is about 10.
The execution mode that shows among Fig. 3 A-3E provides cleaning liquid material 300, and cleaning liquid material 300 has distribution equably (or dissolving) polymer with macromolecule 310 in clean solution 305.As mentioned above, for using, the polymer with macromolecule is dissolved in this clean solution fully, and this clean solution can be that water becomes (aqueous).This polymer is highly suction, forms soft gel in the solution to become at water.Fig. 3 F shown cleaning liquid material 300 ', cleaning liquid material 300 ' have be emulsified in clean solution 305 ' in gel sample polymer drop 340.Clean solution 305 ' also the comprise polymer 306 of little isolation.Surfactant (such as ADS) can be added in this clean solution with help these gel sample polymer drop 340 uniformly dispersings clean solution 305 ' in.In the execution mode shown in Fig. 3 F, clean solution 305 ' and gel sample polymer drop 340 between border 341 is arranged.Gel sample polymer drop 340 is soft, and the device feature on this substrate surface is out of shape.Because gel sample polymer drop 340 is around the device feature distortion, so they can not apply very big energy (or power) and damage them on this device feature.In one embodiment, the diameter of this drop arrives between about 100 μ m at about 0.1 μ m.
In another embodiment, this polymer dissolution of polymerizable compound with macromolecule in this clean solution forming gel sample polymer clump 350, gel sample polymer clump 350 not with clean solution 305 " produce obvious border, shown in Fig. 3 G.Clean solution 305 " also comprises little and the polymer 306 of isolating.Gel sample polymer clump 350 is soft and the distortion of the device feature on this substrate surface, and does not apply lot of energy (or power) on the device feature on this substrate surface and damage them.In one embodiment, the diameter of this polymer clump arrives between about 100 μ m at about 0.1 μ m.
Cleaning material discussed above all is a liquid phase.In another execution mode, cleaning material discussed above (such as cleaning liquid material 300,300 ' and 300 ") can be stirred (agitated) to increase gas (such as N
2, inert gas) or admixture of gas (such as air) so that this cleaning material becomes foam, shown in Fig. 3 H.Cleaning material 300 in Fig. 3 F
*Has the air bubble 360 that is dispersed in the clean solution 305.Polymer 310 also is dispersed in the clean solution 305.In other embodiments, the polymer 310 among Fig. 3 H can be polymer drop 340 or polymer clump 350, described in Fig. 3 F and 3G.Cleaning material 300
*Have gas phase and liquid phase.
Above-described this cleaning material can be distributed on this substrate surface by many mechanism.As in Fig. 2 A and 2B, discussing, the device feature on this patterned substrate of infringement, the energy that this cleaning material applies on this patterned surface must avoid damaging the minimum force Es of this device feature or below the Es '.This cleaning material discussed above (such as cleaning material 300,300 ', 300 " and 300
*) in liquid phase or in the gas/liquid phase.Liquid and foam can be out of shape (or flowing) in the device feature that flows on this substrate surface and center on this substrate surface.Therefore, this cleaning material can be used in and not apply very big energy on this patterned substrate on the device feature on this substrate surface.
Fig. 4 A shown, according to an embodiment of the invention, is used for the rough schematic view of vertical view of the system 400 of clean substrate.Wafer (or substrate) 420 moves on rectilinear direction towards cleaning head 410 (or cleaning proximity heads).This cleaning head is kept by supporting construction 450, and supporting construction 450 can be an arm.Cleaning head 410 provides (or distribution) above-mentioned cleaning material.In one embodiment, the length 440 of cleaning head 410 is longer than the diameter 451 of wafer 420.420 of wafers move once below this cleaning head.In another embodiment, the length 440 of cleaning head 410 is shorter than the diameter 451 of wafer 420.Wafer 420 moves repeatedly to guarantee that whole wafer 420 all is cleaned below cleaning head 410.
In one embodiment, this cleaning material transmits by supply line 460 from reservoir 470 (it can pressurize).Alternatively, cleaning head 410 can move above wafer 420, and wafer 420 keeps static or also moves.As mentioned above, this cleaning material can be the form of liquid solution, foam or emulsion.If reservoir 470 pressurizes, clean solution or emulsion may be inflated and developed into foam before being sent to this cleaning head.When reservoir did not pressurize, this clean solution can or transmit by other known tool pumping (pumped).
In one embodiment, this cleaning head also be coupled in container 423 so that with the cleaning material of crossing from this substrate surface find time (vacuumed), and be coupled in vacuum pump 425, it provides this vacuum.
Fig. 4 B shown, according to an embodiment of the invention, has the exemplary upward view of cleaning head 410 in the distribution hole 411 of many these cleaning materials of distribution.Alternatively, replace distribution hole 411 with long and narrow distribution groove.In one embodiment, should center on vacuum hole 414 in (row) distribution hole 411, vacuum hole 414 is removed cleaning material from this substrate surface.
Fig. 4 C has shown an execution mode of the end view of cleaning head 410, and wherein cleaning head 410 is distributed in the cleaning body 430 of cleaning material on the surface 421 of wafer 420 of cleaning head 410 belows with clean surface 421.This cleaning material is by supply line 460 supplies.By the vacuum that vacuum tube 465 provides this cleaning material is removed from this substrate surface.Wafer 420 moves with the direction that arrow 422 is painted below cleaning head 410.The cleaning body 430 of cleaning material forms " meniscus ".Cleaning body (or volume) 430 that term used herein " meniscus " refers to liquid partly fettered by the surface tension of this liquid and holds.This meniscus also is controllable, and can be square from the teeth outwards mobile in holding shape.In specific implementations, this meniscus is by transport fluid into the surface, be controllable thereby also remove this meniscus of this fluid simultaneously, and keep this meniscus always.And system's control be carried and be removed to the shape of this meniscus can by accurate liquid, and the controller that system and computing system were carried and removed to this liquid has interface, and this computing system can be that network connects.The details that forms the distribution head of meniscus on substrate surface is 11/641 at application number, 362 (acting on behalf of case LAM2P581), the applying date are on December 18th, 2006, and name is called in the U.S. Patent application of " Substrate Preparation Using Stablized Fluid Solutions andMethods for Making Stable Fluid Solutions " to be discussed.The open text of above-mentioned related application is incorporated into herein by reference.
In one embodiment, when wafer 420 was mobile below cleaning head 410, cleaning body 430 stayed the skim cleaning material on surface 421.This cleaning material thin layer is the result that cleaning material is not removed fully by vacuum.The surface 421 that cleaning head 410 keeps adjacent wafer 420 by arm 450.Therefore, cleaning head 410 is called proximity heads.In one embodiment, the surface 421 from this substrate of cleaning material below cleaning body 430 of cleaning head 410 distribution applies shear stress (shear force) 432.
In another embodiment, apply downward power (not shown) from the cleaning material of the cleaning head 410 distribution also substrate surface 421 below cleaning body 430.In one embodiment, this downward power helps to make polymer contact with this pollutant to allow this pollutant to be attached to this polymer chain and/or network with this shear stress.In one embodiment, this pollutant is attached to this polymer by Van der Waals force.In another embodiment, this pollutant is held back by this converging network.Do not need downward power or shear stress when in another embodiment, the polymer in making this clean solution contacts with this pollutant.When this cleaning material was dispersed on this substrate surface, the polymer that is dispersed in this cleaning material can contact with the pollutant on this substrate surface.Removing from this substrate surface the rinsing step process of cleaning material, adhered to by this polymer and/or the pollutant held back is removed from this substrate surface with this cleaning material.
Fig. 4 D has shown on substrate 420 cleaning head 420 of distribution cleaning material " viewgraph of cross-section.This cleaning material is to distribute by the distribution hole that is coupled in cleaning material supply line 460, and is to remove from substrate 420 surfaces by the vacuum hole that is coupled in vacuum tube 465.This cleaning material between cleaning head 420 and substrate 420, form meniscus 430 '.In addition, the surface tension that has the surface tension of being coupled in to reduce the supply line 467 of gas reduces gas distribution hole (not shown), and this surface tension reduces the surface tension that gas is used to reduce the surface of substrate 420.In one embodiment, this surface tension reduces gas and comprises isopropyl alcohol (IPA) and nitrogen (N
2) mixture.
Fig. 4 E shown cleaning systems 400 with cleaning material distribution assembly 418 ', distribution assembly 418 comprises cleaning head (or proximity heads) 410, time cleaning head (or proximity heads) 410 ' and supporting construction 419.Last cleaning head 410 be down cleaning head 410 ' mirror image.Cleaning material distribution assembly 418 is by controller 419 controls.Substrate 420 (keeping) by block substrate 424 on the direction 466 upper and lower cleaning head 410,410 ' between pass.Use this upper and lower cleaning head 410,410 ', the front of this substrate and the back side can be cleaned simultaneously.
Each cleaning head comprises a plurality of distributions hole (or nozzle), and the cleaning material that forms meniscus 200 is supplied by this distribution hole.This liquid can be deionized water, clean solution or other liquid that is used to handle, clean or wash substrate 160.A plurality of vacuum ports 114 apply vacuum at the periphery of meniscus 200.Vacuum port 114 absorbs from the liquid of meniscus 200 and fluid on every side, such as air or other gas of being supplied by nozzle 112.In some embodiments, nozzle 112 centers on vacuum port 114 and supplies IPA vapor, nitrogen, its mixture or other gas or two-phase gas/liquid fluid.The fluid of nozzle 112 and supply therefrom helps to keep coherent liquid/gas interface in the surface of meniscus 200.About the more details of proximity heads structure and operation are incorporated herein by reference by top cross reference to the correlation technique part.Especially, application reference number is that 10/261,839,10/330,843 and 10/330,897 U.S. Patent application is to obtain with the proximity heads structure and to operate relevant more details.
Using the details of the cleaning device of proximity heads distribution cleaning material is 11/532 at application number, 491 (acting on behalf of number of documents LAM2P548B), the applying date is on September 15th, 2006, name is called the U.S. Patent application of " Method and Material for Cleaning a Substrate ", application number is 11/532,493 (acting on behalf of number of documents LAM2P548C), the applying date is on September 15th, 2006, U.S. Patent application and application number that name is called " Apparatus and System for Cleaning a Substrate " are 11/641,362 (acting on behalf of number of documents LAM2P581), the applying date is on December 18th, 2006, and name is called in the U.S. Patent application of " Substrate Preparation UsingStabilized Fluid Solutions and Methods for Making Stable FluidSolutions " to be described.The open text of each is all incorporated into herein by reference in the above-mentioned related application.
Above-described each execution mode only is an example.Other execution mode that is used on substrate surface the distribution cleaning material and is used for removing from substrate surface the cleaning head of cleaning material also is possible.Fig. 4 F has shown, according to an embodiment of the invention, holds the cleaning slot 480 and the flushed channel 490 that holds flushing liquid 491 of cleaning material 481.The cleaning material 481 of the substrate 420 that is kept by substrate carrier 423 ' at first be dipped into groove 480 contacts with pollutant on this substrate surface to allow this cleaning material.Propose with substrate 420 ' be reduced in the cleaning material 481 in the cleaning slot 480 and from cleaning material 481 by the mechanical mechanism (not shown).Then, the substrate 420 that keeps by substrate carrier 426 ' next be dipped into the flushing liquid 491 of cleaning slot 490 to wash out this cleaning material.The mechanical mechanism (not shown) is used to that this substrate is dropped to these flushed channel 490 neutralizations and proposes from this flushed channel 490.When this cleaning material flushed channel (or the groove that is used for washing) 490 leave substrate 420 ' surperficial the time, this pollutant is removed from this substrate surface with this cleaning material.The mechanical mechanism (not shown) is with this substrate 420 ' drop in the flushing liquid 491 in the flushed channel 490.Although show among Fig. 4 F that the orientation of this substrate is vertical, yet other orientation also is possible.For example, this substrate can be immersed in this cleaning slot and/or this flushed channel with transversal orientation.
Fig. 4 G has shown another execution mode that is used for from the cleaning device 499 of this substrate surface clean contaminants.This cleaning device has the cleaning slot 485 of belt material lower supporter 483.Substrate 420
*Be placed on the substrate support 483, substrate support 483 rotates in this clean process.Cleaning device 499 has cleaning material distribution 497, and it is distributed to substrate 420 with cleaning material
*The surface on.Cleaning material distribution 497 (or distribution nozzles) are coupled in the storage tank 470 of cleaning material.Cleaning device 499 also has flushing liquid distribution 498 (or distribution nozzles), its with the flushing liquid spray at substrate 420 " the surface on.Flushing liquid distribution 498 is coupled in the storage tank 496 of flushing liquid.The substrate 420 of rotation
*Allow this cleaning material and this flushing liquid to cover the entire substrate surface.Be distributed with before removing this cleaning material from this substrate surface at this flushing liquid, this cleaning material is distributed on this substrate surface.
After this cleaning material is fallen from the surface washing of this patterned substrate, by with than higher speed spin (or rotation) this substrate and dry this patterned substrate.In the spin process, this substrate is fixing by a device (or mechanism), does not show this device among Fig. 4 G.In one embodiment, surface tension reduces on the surface that gas is applied to this patterned substrate to help to remove this flushing and possible residual cleaning material.In one embodiment, this surface tension reduces gas and comprises isopropyl alcohol (IPA) and nitrogen (N
2) mixture.Also can use other surface tension to reduce gas.
Above-described cleaning material has superiority when cleaning has fine feature (or topology) such as the substrate of polysilicon line or metal interconnected (having groove and/or through hole) on this substrate surface especially.The minimum widith of these fine features (or critical dimension) can be 45nm, 32nm, 25nm or littler.For the improved cleaning of using above-described cleaning material, this cleaning material need bring the least possible metal and/or fume.In one embodiment, the metal pollutant in the cleaning material of preparation before being applied to this substrate surface, is designated as all metal pollutants less than 100ppb (1,000,000,000 mark).In another embodiment, the metal pollutant in the cleaning material of preparation is designated as less than 10ppb (1,000,000,000 mark).In another execution mode, the metal pollutant in the cleaning material of preparation is designated as less than 1ppb to carry out better cleaning.In one embodiment, the particulate specification of the cleaning material of preparation before being applied to this substrate surface, for the particle size greater than 65nm, is less than 50.In another embodiment, for the particle size greater than 65nm, this particulate specification is less than 20.In another embodiment, for the particle size greater than 50nm, this particulate specification is less than 10.In another execution mode, for the particle size greater than 30nm, this particulate specification is less than 5.The more advanced technology of trickleer for having (or littler) characteristic size, the specification of metal pollutant and particulate is stricter.
Many method and systems can be used for making the cleaning material that (or purification) satisfies the metal impurities specification.For example, the metal pollutant in this cleaning material can be removed (or cleaning material can be purified) by fractionation.In one embodiment, the water to polymer becomes to add ethanol in the solution.Because this polymer in ethanol than in water more indissoluble separate, so purer polymer can precipitate.Except ethanol, can become solution to add acid to the water of polymer to help separating metal from this polymer.Acid can provide the H+ ion to be attached to the metal ion of this polymer with replacement, and such as Na+, this helps this metal is separated from this polymer.Another method of removing metal pollutant is by using ion-exchange.The post that this cleaning material is passed little resin particle is housed is so that the hydrogen ion exchange that the metal ion in this cleaning material and this post provide.If this post is full of acid, it is provided for replacing the hydrogen ion of metal ion (such as Na+).Just do example with Na+.Can remove other metal ion with such method and system.Also can use other method purifying and cleaning material.
Fig. 4 H has shown, according to an embodiment of the invention, is used for the schematic diagram of the system 475 of clean substrate.Cleaning head 410 (or cleaning proximity heads) is similar to shown in Fig. 4 A.Substrate 420 " is kept by block substrate (or substrate carrier) 424.Cleaning head 410 is coupled in the reservoir 470 of cleaning material (such as cleaning material 300 discussed above).Cleaning head 410 also is coupled in the container 423 of the cleaning material of using, and container 423 further is coupled in vacuum pump 425.In one embodiment, system 475 has syringe pipe 417, and syringe pipe 417 distribution flushing liquids are with from substrate 420 " the surface remove cleaning material.Syringe pipe 417 is coupled in the reservoir 471 of flushing liquid.In one embodiment, the structure of syringe pipe 417 is similar to the cleaning head with flushing liquid distribution hole and vacuum hole.Syringe pipe 417 is coupled in the container 408 of the flushing liquid of using, container 408 further be coupled in vacuum pump 425 '.In another embodiment, system 475 has vacuum head 412, and vacuum head 412 is removed any remaining cleaning material and/or the flushing liquid of staying on this substrate surface.This vacuum head is coupled in the cleaning material used and the waste material container 409 of flushing liquid.Waste material container 409 further is coupled in vacuum pump 425 ".
Fig. 4 I shown, according to an embodiment of the invention, and another cleaning systems 400
*Viewgraph of cross-section.Wafer (or substrate) 420 is towards cleaning head 410
*(or cleaning proximity heads) moves on rectilinear direction.This cleaning head is kept by supporting construction 450, and supporting construction 450 can be an arm.Cleaning head 410 is coupled in the reservoir 470 of cleaning material.Cleaning head 410
*(or distribution) above-described cleaning material is provided.In one embodiment, cleaning head 410
* Length 440 longer than the diameter 451 of wafer 420.420 of wafers move once below this cleaning head.In another embodiment, cleaning head 410
* Length 440 shorter than the diameter 451 of wafer 420.Wafer 420 is at cleaning head 410
*Move repeatedly to guarantee that whole wafer 420 is cleaned the below.
In the execution mode of Fig. 4 I, by cleaning head 410
* Syringe pipe 417 is arranged
*Be similar to cleaning head 410
*, syringe pipe 417
*Length 440 ' can be longer or shorter than the diameter 451 of this wafer.Wafer 420 is at first at cleaning head 410
*Move the below, then at syringe pipe 417
*Move the below.Cleaning head 410
*Comprise slit 411
*With the distribution cleaning material.Fig. 4 J comprises having slit 411
* Cleaning head 410
*Upward view.Syringe pipe 417
*Be coupled in the reservoir 471 of flushing liquid.In one embodiment, syringe pipe 417
*Structure be similar to the cleaning head 410 of Fig. 4 A and 4B, it has liquid distribution hole 401 and vacuum hole 402.Fig. 4 J comprises the upward view of the syringe pipe 417 with a plurality of flushing liquid distributions hole 401, and these flushing liquid distribution holes 401 are centered on by a plurality of vacuum holes 402.Syringe pipe 417 is coupled in the container 408 of the flushing liquid of using, container 408 further be coupled in vacuum pump 425 '.
When wafer 420 at cleaning head 410
*With syringe pipe 417
*When the below is mobile, cleaning head 410
*On this substrate surface, distribute cleaning material and syringe pipe 417
*This cleaning material is fallen from wafer 420 surface washings.Syringe pipe 417
*Also remove the cleaning waste material, the cleaning waste material comprises wafer 420 lip-deep particulates and pollutant, cleaning material and flushing liquid.
Fig. 4 K shown, according to an embodiment of the invention, and cleaning material preparation system 482.System 482 has polymer container 484, the polymer that uses in polymer container 484 these cleaning materials of storage.Polymer container 484 further is coupled in distribution controller 488, and 488 controls of distribution controller are distributed to the amount of the polymer of the premixed container 493 in the system 482.System 482 also has solvent container 486, the solvent that uses in solvent container 486 these cleaning materials of storage.Solvent container 486 further is coupled in distribution controller 489, and 489 controls of distribution controller are distributed to the amount of the solvent of premixed container 493 and cleaning material adjustment container 495 (following meeting further describes).In addition, system 482 has buffer and additive container 487, and buffer and (one or more) additive of using in buffer and additive container 487 these cleaning materials of storage are such as surfactant.Buffer and additive container 487 are coupled in distribution controller 492, and 492 controls of distribution controller are distributed to premixed container 493 and cleaning material is adjusted the buffer of container 495 and the amount of additive.In another embodiment, in this cleaning material, do not need additive, and in buffer and additive container 487, do not have additive.In another execution mode, this buffer and this additive are in independent container, and by independent controller control.
In one embodiment, this polymer, solvent, buffer and additive at first mix in premixed container 493.Then, the mixture from container 493 is provided for purifier (or purification system) 494 to remove metal pollutant and other pollutants from this mixture.In one embodiment, purifier 494 also has filtering function so that any particulate (soft or polishing property) is filtered away from this mixture.In another embodiment, have only this polymer and this solvent in premixed container 493, to mix.This buffer and this additive not in premixed container 493 with this polymer and this solvent.
After removing metal pollutant, this mixture is moved to adjustment container 495 to add required added solvent, buffer and additive to make final cleaning material mixture.The cleaning material of preparation is stored in the container 427 with clean substrate.Alternatively, the mixture that comes out from purifier 494 can use and need further not handle for this cleaning material in adjusting container 495.In such environment, the mixture that comes out from purifier 494 is final cleaning material, and is supplied to cleaning material memory 427.In another embodiment, can use, and not need through purifier 494 from the mixture of premixed container 493.Under such environment, this mixture (it is a cleaning material) is provided to memory 427.
Table I has compared the carbopol 941 of Different Weight percentage among the BAS
TMThe viscosity of PAA, washing time and particulate are removed efficient (PRE).This viscosity is at 500s
-1Strain rate under measure.This washing time is measured and is rinsed out this cleaning material institute's time spent from this substrate surface.This PRE is to use particulate monitoring substrate to measure, and particulate monitoring substrate is deliberately deposited the silicon nitride particulate of various sizes.In this research, only measure the particle size between 90nm and 1 μ m.PRE by under establish an equation (1) calculate:
Counting (1) before PRE=(counting-cleaning back counting before the cleaning)/cleaning
| Concentration (wt%) | Polymer molecular weight (g/mol) | Nian Du @500s -1(cP) | Washing time (second) | ?PRE |
| 0.2％ | 1.25M | 26 | ＜5 | 74％ |
| 0.5％ | 1.25M | 198 | 5-10 | 89％ |
| 1％ | 1.25M | 560 | 8-10 | 87％ |
Table I: the carbopol 941 that variable concentrations is arranged
TMThe contrast of the cleaning material of PAA polymer
The cleaning material of Table I is by mixing carbopol 941 in the above among the BAS that describes
TMPAA (this is commercially available) makes.The carbopol 941 that uses
TMPAA has 1,250, the molecular weight of 000 (or 1.25M) g/mol.Result in the Table I shows, along with carbopol 941
TMIt is about 0.5% that the percentage by weight of PAA is increased to, and PRE increases.Polymer is between 0.5% and 1% the time, and PRE does not have obvious variation.This result shows that also the viscosity of this cleaning material increases along with the increase of the percentage by weight of this polymer.In addition, rinsing out the washing time that this cleaning material spends increases along with the increase of the viscosity of this cleaning material.Water is used to wash this substrate.
Table I I has compared that different cleaning materials is held back or the ability of suspended particulates in this cleaning material.The silicon nitride particulate is deliberately added in this cleaning material.After having added the silicon nitride particulate, this cleaning material is distributed on the clean substrate.This cleaning material is rinsed out from this substrate then, then this substrate is measured the quantity of this lip-deep particulate (silicon nitride).
| Cleaning material with 1XSiN particulate | Counting micro particles after the flushing | Cleaning material with 50XSiN particulate | Counting micro particles after the flushing |
| DIW | Saturated | DIW | Saturated |
| DIW+ ammonium (pH＞10) | 6002 | DIW+ ammonium (pH＞10) | Saturated |
| “100” | 4238 | “100” | Saturated |
| 0.2% carbopol 940 in " 100 " TM | 1137 | 0.2% carbopol 940 in " 100 " TM | 15689 |
| 0.5％ PAM | 53 | 0.5 |
104 |
The counting micro particles that Table II is added with the different cleaning material of silicon nitride particulate compares
Five types solution is used as cleaning material.First kind cleaning material, " DIW " is deionized water.The second class cleaning material is the DIW that is added with ammonium, so that the pH value is adjusted to more than 10.The 3rd class is solution " 100 ", and solution " 100 " is the BAS that is added with the ADS of 1wt%.As mentioned above, the pH value of solution " 100 " is 10.The 4th class cleaning material is the carbopol 940 of 0.2wt%
TMPAA is dissolved in " 100 " solution.Carbopol 940
TMThe molecular weight of PAA is 4M (or 400 ten thousand) g/mol.The 5th class is that the PAM of 0.5wt% is dissolved in the solution " 100 ".The molecular weight of PAM is 18M g/mol.The pH value of the 5th class cleaning material is about 10.The 5th class cleaning material mixes with two kinds of amount silicon nitride particulate 1X and 50X.The quantity of the silicon nitride particulate of 50X is 50 times of quantity of the particulate of 1X.1X nitride particulate shows that the nitride weight percentage of fines is 0.00048%, and 50X nitride particulate shows, the nitride weight percentage of fines is 0.024%.
The result shows that DIW is not fine suspending and keeping aspect the silicon nitride particulate in DIW.A large amount of silicon nitride particulates (saturated) are left on this substrate surface.Particulate (or defective) counting greater than 75,000 has been described in the description of " saturated " that uses in the Table II.On the contrary, 0.2% carbopol 940 in " 100 "
TMThe PAM of 0.5% in PAA and " 100 " is much better aspect the suspension silicon nitride particulate in this cleaning material.0.5%PAM in " 100 " hold back or suspend be added on aspect the silicon nitride particulate in this cleaning material especially good.Having only smallest number very in this cleaning material, is 53 for 1X silicon nitride particulate, and is that 104 silicon nitrides (or Si3N4) particulate is left on this substrate surface for 50X silicon nitride particulate.
The molecular weight of the polymer that uses in this cleaning material may influence particulate and remove efficient (PRE).Fig. 5 A has shown on the substrate figure greater than the function of the molecular weight of the PRE of 90nm silicon nitride particulate and this two kinds of polymer (PAA and HEC), and this substrate is by the cleaning material cleaning of the hydroxyethylcellulose (HEC) that has 1% (percentage by weight) in the PAA that has 1% (percentage by weight) in " 100 " and " 100 ".Data among Fig. 5 A show, PRE along with the molecular weight of HEC 100,000g/mol increases to increasing between 1M (1,000,000) g/mol.Data among Fig. 5 A also show, PRE along with the molecular weight of PAA 500,000g/mol increases to the increase between 1M g/mol.Yet for PAA, PRE changes between 1M g/mol and 1.25M g/mol seldom.Fig. 5 B shown, greater than the function of the molecular weight of the PRE of the silicon nitride particulate of 90nm and PAM, this substrate is by the cleaning material cleaning of the PAM that has 1% (percentage by weight) in " 100 " on the substrate.Data among Fig. 5 B show, PRE along with the molecular weight of PAM 500,000g/mol increases to the increase between the 18M g/mol.Data among two figure have all shown the influence of molecular weight to PRE.
As above-mentioned, the viscosity of this cleaning material can influence the washing time of removing cleaning material from this substrate surface.Fig. 5 C has shown the result who adds ammonium chloride (NH4Cl) in the cleaning material of the PAM that is dissolved with 0.2wt%-1wt% in deionization (DI) water.This PAM has the molecular weight of 18M g/mol.The ammonium chloride that increases provides extra ion and increases the ionic strength of this cleaning material to this cleaning material in this clean solution intermediate ionization.The ionic strength that increases has reduced the viscosity of this cleaning material.For example, for the cleaning material with 1wt%PAM, the ammonium chloride of 1.5wt% can be reduced to 60cP from about 100cP with viscosity.For the cleaning material with 0.5wt%PAM, the ammonium chloride of 1.5wt% also can be reduced to 25cP from about 50cP with viscosity.Reducing viscosity can reduce from this substrate surface flushing cleaning material institute's time spent amount.In one embodiment, it is following to guarantee the realizing substrate cleaning in finishing the reasonable time framework of manufacturing objective that the viscosity of this cleaning material is maintained at 500cP.
Fig. 6 A has shown, according to an embodiment of the invention, uses the technological process 600 of the cleaning material cleaning patterned substrate of the polymer that comprises the polymerizable compound with macromolecule.This cleaning material as mentioned above.In step 601, this patterned substrate is placed in the cleaning device.In step 602, this cleaning material is distributed on the surface of this patterned substrate.In step 603, flushing liquid is distributed on the surface of this patterned substrate to rinse out this cleaning material.This flushing liquid as mentioned above.In one embodiment, after this flushing liquid was applied on this substrate surface, this flushing liquid on this substrate surface, this cleaning material and this pollutant can be removed by the surface from this patterned substrate by vacuum.
Fig. 6 B has shown that according to an embodiment of the invention, the preparation cleaning material is with the technological process 650 of cleaning patterned substrate.This cleaning material comprises aforesaid polymer with polymerizable compound of macromolecule.In step 651, material, mixed forming this cleaning material such as polymer, solvent and additive (such as buffer and/or surfactant), or the premix of this cleaning material.In step 653, this cleaning material (or this premix) is purified to have the metal pollutant less than 1ppb.After the purification processes process, might need to add certain (one or more) additive, solvent and/or buffer this cleaning material is returned to the preparation of expectation.Under such environment, add this additive, solvent and/or buffer to make the final products of cleaning material.
As discussed above, many purifying and cleaning materials are arranged from cleaning material, to remove the method for metal impurities.Alternatively, this purification operations can prepare in the processing procedure at this cleaning material and carries out.Fig. 6 C has shown that according to another embodiment of the invention, the technological process 670 of the cleaning material of patterned substrate is cleaned in preparation.In step 671, this polymerizable compound and certain solvent are mixed together to form mixture.In step 672, the mixture of polymer and solvent is purified to having the metal pollutant less than 1ppb.In step 673, the mixture of polymer and solvent mixes with remaining composition to form cleaning material.Other execution mode of this cleaning material of purifying also is possible.
Cleaning material discussed above, apparatus and method have the patterned substrate of fine feature and do not destroy this characteristic aspect basically in cleaning and have advantage.This cleaning material is a fluid, can be liquid phase or liquid/gas phase (foam), and around device feature distortion; Therefore, this cleaning material does not damage this device feature.The cleaning material of this liquid phase can be the form of liquid, colloidal sol or gel.This cleaning material that comprises the polymer of the polymerizable compound with macromolecule is caught the pollutant on this substrate.In addition, this cleaning material is held back this pollutant and is not made this pollutant return this substrate surface.Polymer with polymerizable compound of macromolecule forms long polymer chain, its can also cross-linked (cross-linked) to form polymer network.Compare with traditional cleaning material, long polymer chain and/or polymer network demonstrate better capability aspect the pollutant catching and hold back.
Be applied to this substrate surface with before removing pollutant or particulate from this substrate surface, this cleaning material is not have non deformable particulate (or polishing property particulate) basically.Non deformable particulate is hard particulate, such as the particulate in mud or the sand, and may damage trickle device feature on this patterned substrate.In this substrate cleaning course, this cleaning material can be collected pollutant or particulate from this substrate surface.Yet, be applied on this substrate surface with before carrying out the substrate cleaning at this cleaning material, there is not non deformable particulate deliberately to be mixed in this cleaning material.
Although top each execution mode has been described material, the method and system that is used to clean patterned substrate, yet this material, method and system also can be used to clean the not substrate of patterning (or blank).
Although top discussion is the center with clean contaminants from patterned wafer, yet this cleaning device and method also can be used to clean contaminants on the wafer of patterning never.In addition, the exemplary patterns on the patterned wafer discussed above is the line of projection, such as polysilicon line or metal connecting line.Yet thought of the present invention can be applied to the substrate of the feature of depression.For example, the breach through hole behind the CMP can form pattern on wafer, and the only design of raceway groove can be used to realize best contaminant removal efficient.
Substrate, example for example used herein, expression but not be limited to semiconductor crystal wafer, hard disk drive disk, CD, glass substrate and dull and stereotyped display surface, liquid crystal display surface or the like, its make or the process operation process in may be contaminated.According to the substrate of reality, the surface may be contaminated by different way, and the acceptable degree of pollutant is to limit in the specific industry of this substrate of processing.
Although this paper has described some embodiments of the present invention in detail, yet those of ordinary skill in the art should be appreciated that the present invention can be embodied in many other particular forms not departing from the spirit or scope of the present invention.Therefore, it is illustrative and nonrestrictive that present embodiment and execution mode will be considered to, and the present invention's details of not being restricted to wherein to be provided, but can revise within the scope of the appended claims and realize.
Claims (26)
1. cleaning systems of removing the lip-deep pollutant of the patterned substrate that limits integrated circuit (IC)-components comprise:
Be used to support the substrate carrier at the edge of this patterned substrate;
Be placed in the cleaning head of this patterned substrate top that keeps by this substrate carrier, this cleaning head has on this surface of this patterned substrate that a plurality of distribution Kong Yixiang are used to limit integrated circuit (IC)-components distributes cleaning material, wherein this cleaning material comprises that molecular weight is greater than 10, the polymer of the polymerizable compound of 000g/mol, this polymer is dissolvable in water in the solvent to form this cleaning material, this cleaning material had the metal pollutant less than 1/1000000000th (1ppb) before being applied on this surface of this patterned substrate, this dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate, wherein when power is applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material does not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant, this cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate, this cleaning head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material; And
Be used to keep this surperficial supporting construction of contiguous this patterned substrate of this cleaning head.
2. cleaning systems according to claim 1, wherein this cleaning head further comprises a plurality of vacuum holes of this cleaning material that is used for finding time from this surface of this patterned substrate.
3. cleaning systems according to claim 1, wherein this cleaning head further comprises and is used for a plurality of distributions hole that surface tension reduces gas, this surface tension reduces this surperficial surface tension that gas reduces this patterned substrate.
4. cleaning systems according to claim 1 further comprise:
The connecting gear that is used to make this patterned substrate below this cleaning head, to move.
5. cleaning systems according to claim 1, wherein this distribution head has the slit crack to distribute this cleaning material.
6. cleaning systems according to claim 1 further comprise:
Be placed in this patterned substrate top also by the syringe pipe of this cleaning head, wherein this syringe pipe distribution flushing liquid is removed cleaning material with this surface from this patterned substrate.
7. cleaning systems according to claim 6, wherein this syringe pipe has a plurality of holes of this flushing liquid of distribution, and this syringe pipe also has a plurality of vacuum holes of removing this flushing liquid, this cleaning material and this pollutant from this surface of this patterned substrate.
8. cleaning systems according to claim 1, wherein this substrate carrier makes this patterned substrate move under this cleaning head with certain speed.
9. cleaning systems according to claim 1, wherein this solvent is from by water, isopropyl alcohol (IPA), methyl-sulfoxide (DMSO), dimethyl formamide (DMF) or it is in conjunction with selecting the group of forming.
10. cleaning systems according to claim 1, wherein this polymerizable compound is from by acrylate copolymer, such as polyacrylamide (PAM) and polyacrylic acid (PAA), such as carbopol 940
TMWith carbopol 941
TMPoly--(nitrogen, nitrogen-dimethyl-acrylamide) (pDMAAm), poly--(nitrogen-isopropyl-acrylamide) (PIPAAm), polymethylacrylic acid (PMAA), PMAm (PMAAm), polyamine and oxide, such as polymine (PEI), poly(ethylene oxide) (PEO), PPOX (PPO), polyvinyl is such as polyvinyl alcohol (PVA), polyvinyl sulfonic acid (PESA), polyvinylamine (PVAm), polyethylene-pyrrolidones (PVP), poly--4-vinyl pyrimidine (P4VP), cellulose derivative is such as methylcellulose (MC), ethyl-cellulose (EC), hydroxyethylcellulose (HEC), carboxymethyl cellulose (CMC), glycan is such as gum arabic, agar and agarose, heparin, guar gum, xanthans, and protein is such as endosperm, collagen, elect in the group that glutelin is formed.
11. cleaning systems according to claim 1, wherein this molecular weight arrives between about 100M g/mol at about 0.1Mg/mol.
12. cleaning systems according to claim 1, wherein this cleaning material is the fluid of liquid, colloidal sol, gel or form of foam.
13. cleaning systems that are used to distribute cleaning material with the lip-deep pollutant of removing the patterned substrate that is used to limit integrated circuit (IC)-components comprise:
Be used to support the substrate support of this patterned substrate, wherein this substrate support rotates with this removal of contaminants from this patterned substrate in the clean process;
Be placed in the distribution nozzle of this patterned substrate top, with this cleaning material of distribution on this patterned substrate that is used to limit integrated circuit (IC)-components, wherein this cleaning material comprises that molecular weight is greater than 10, the polymer of the polymerizable compound of 000g/mol, this polymer is dissolvable in water in the solvent to form this cleaning material, this cleaning material had the metal pollutant less than 1ppb before being applied on this surface of this patterned substrate, this dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate, wherein when power is applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material does not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant, this cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate, this distribution head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material.
14. cleaning systems according to claim 13, wherein this substrate support is placed on cleaning slot inside.
15. cleaning systems according to claim 13, it further comprises:
The flushing liquid distribution nozzle that is used for distribution flushing liquid on this patterned substrate, wherein this flushing liquid distribution head is coupled in the flushing liquid holding tank, and this flushing liquid is removed this cleaning material from this surface of this patterned substrate.
16. cleaning systems according to claim 15, wherein this flushing liquid is deionized water (DIW).
17. cleaning systems that are used to remove the lip-deep pollutant of the patterned substrate that is used to limit integrated circuit (IC)-components comprise:
Be used to support the substrate carrier of this patterned substrate;
Hold the cleaning slot that is used for from the cleaning material of this removal of contaminants of this patterned substrate of being used to limit integrated circuit (IC)-components, wherein this cleaning material comprises that molecular weight is greater than 10, the polymer of the polymerizable compound of 000g/mol, this polymer is dissolvable in water in the solvent to form this cleaning material, this cleaning material had the metal pollutant less than 1ppb before being applied on this surface of this patterned substrate, this dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate, wherein when power is applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material does not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant, this cleaning material was not have the polishing property particulate basically before being applied on this surface of this patterned substrate, and this distribution head is coupled in the memory of this cleaning material; And
The mechanical mechanism that is used for this patterned substrate dropped in this cleaning slot and mentions in this cleaning slot.
18. cleaning systems according to claim 17 further comprise:
Hold the flushed channel that is used for falling the clean liquid of this cleaning material from this surface washing of this patterned substrate; And
Be used for this patterned substrate is dropped to the mechanical mechanism of this flushed channel.
19. a cleaning material preparation system comprises:
Polymer container, it holds polymer;
Solvent container, it holds solvent;
Buffer reservoir, it holds buffer; And
Be used to mix this polymer, this solvent and this buffer are to prepare the mixer of this cleaning material, wherein this mixer is coupled in this polymer container, this solvent container and this buffer reservoir, and wherein this cleaning material is the lip-deep pollutant that is used to remove the patterned substrate that is used to limit integrated circuit (IC)-components, and wherein this cleaning material comprises that molecular weight is greater than 10, the polymer of the polymerizable compound of 000g/mol, this polymer is dissolvable in water solvent to form this cleaning material, this cleaning material had the metal pollutant less than 1/1000000000th (1ppb) before being applied on this surface of this patterned substrate, this dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate, wherein when power is applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material does not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant, this cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate, this cleaning head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material.
20. cleaning material preparation system according to claim 19, wherein this buffer reservoir is further held additive so that this additive of this cleaning material and this polymer, this solvent, this buffer and interpolation mixes in this mixer.
21. cleaning material preparation system according to claim 19, wherein this solvent is from by water, isopropyl alcohol (IPA), methyl-sulfoxide (DMSO), dimethyl formamide (DMF) or it is in conjunction with selecting the group of forming.
22. cleaning material preparation system according to claim 19, wherein this polymerizable compound is from by acrylate copolymer, such as polyacrylamide (PAM) and polyacrylic acid (PAA), such as carbopol 940
TMWith carbopol 941
TMPoly--(nitrogen, nitrogen-dimethyl-acrylamide) (pDMAAm), poly--(nitrogen-isopropyl-acrylamide) (PIPAAm), polymethylacrylic acid (PMAA), PMAm (PMAAm), polyamine and oxide, such as polymine (PEI), poly(ethylene oxide) (PEO), PPOX (PPO), polyvinyl is such as polyvinyl alcohol (PVA), polyvinyl sulfonic acid (PESA), polyvinylamine (PVAm), polyethylene-pyrrolidones (PVP), poly--4-vinyl pyrimidine (P4VP), cellulose derivative is such as methylcellulose (MC), ethyl-cellulose (EC), hydroxyethylcellulose (HEC), carboxymethyl cellulose (CMC), glycan is such as gum arabic, agar and agarose, heparin, guar gum, xanthans, and protein is such as endosperm, collagen, elect in the group that glutelin is formed.
23. cleaning material preparation system according to claim 19, wherein this molecular weight arrives between about 100M g/mol at about 0.1Mg/mol.
24. cleaning material preparation system according to claim 19, wherein this cleaning material is the fluid of liquid, colloidal sol, gel or form of foam.
25. a cleaning material preparation system comprises:
Polymer container, it holds polymer;
Solvent container, it holds solvent;
Buffer and additive container, it holds buffer and the additive that is used to make this cleaning material;
The mixture that is used to prepare this polymer, this solvent, this buffer and this additive is to make first mixer of this cleaning material, and wherein this mixer is coupled in this polymer container, this solvent container and this buffer and additive container;
Purifier, this purifier are the system of purification from first mixture of this first mixer, and wherein this purifier is coupled in this first mixer; And
Be used for by mixing the adjustment container that this first mixture and other buffer and additive prepare this cleaning material, wherein this adjustment container is coupled in this purifier, and wherein this cleaning material is used to remove the lip-deep pollutant of the patterned substrate that is used to limit integrated circuit (IC)-components, and wherein this cleaning material comprises that molecular weight is greater than 10, the polymer of the polymerizable compound of 000g/mol, this polymer is dissolvable in water solvent to form this cleaning material, this cleaning material had the metal pollutant less than 1/1000000000th (1ppb) before being applied on this surface of this patterned substrate, this dissolved polymers has long polymer chain and catches and hold back this pollutant with this surface from this patterned substrate, wherein when power is applied on this lip-deep this cleaning material that is applied to this patterned substrate, this cleaning material does not damage this lip-deep this device feature basically around the device feature distortion on this patterned substrate to remove pollutant, this cleaning material did not have the polishing property particulate basically before being applied on this surface of this patterned substrate, this cleaning head is coupled in the memory of this cleaning material, and this memory is coupled in the preparation system of this cleaning material.
26. cleaning material preparation system according to claim 25, wherein this purifier uses fractionation or ion-exchange to remove metal pollutant from this first mixture.
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| US12/131,667 | 2008-06-02 | ||
| PCT/US2008/013697 WO2009078969A1 (en) | 2007-12-14 | 2008-12-12 | Apparatus for particle removal by single-phase and two-phase media |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104021802A (en) * | 2013-02-28 | 2014-09-03 | 希捷科技有限公司 | Method of cleaning magnetic head slider |
| CN104021802B (en) * | 2013-02-28 | 2019-05-28 | 希捷科技有限公司 | The method for cleaning disc head slider |
| US10854240B1 (en) | 2013-02-28 | 2020-12-01 | Seagate Technology Llc | Method of cleaning magnetic head sliders |
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