CN101901788A - 树脂密封型半导体装置及其制造方法 - Google Patents

树脂密封型半导体装置及其制造方法 Download PDF

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Publication number
CN101901788A
CN101901788A CN2010101136566A CN201010113656A CN101901788A CN 101901788 A CN101901788 A CN 101901788A CN 2010101136566 A CN2010101136566 A CN 2010101136566A CN 201010113656 A CN201010113656 A CN 201010113656A CN 101901788 A CN101901788 A CN 101901788A
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semiconductor device
microballoon
resin molded
manufacture method
semiconductor element
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CN101901788B (zh
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木村纪幸
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Ablic Inc
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Seiko Instruments Inc
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Abstract

本发明提供树脂密封型半导体装置及其制造方法。树脂密封型半导体装置具有：半导体元件；多个微球，其表里一体地具有内部端子面和外部端子面；金属线，其将所述半导体元件与所述内部端子面电连接；以及密封体，其利用密封树脂来密封所述半导体元件、所述多个端子部的一部分和所述金属线，该树脂密封型半导体装置构成为，所述半导体元件的背面从所述密封体露出，并且，所述多个微球的一部分作为外部端子面，从所述密封体的底面呈突起状地露出。

Description

树脂密封型半导体装置及其制造方法
技术领域
本发明涉及收纳半导体元件的半导体装置。特别涉及无引线型的树脂密封型半导体装置及其制造方法。
背景技术
现有的半导体装置特别是无引线型的树脂密封型半导体装置是以如下方式构成的：在玻璃环氧树脂或陶瓷等的印刷基板的一个表面上安装半导体元件，且具有如下的端子结构：通过金属线将半导体元件上的电极与形成在所述印刷基板的一个表面上的多个连接用电极电连接，并且，通过配置在各个通孔中的导电体将形成在印刷基板背面上的外部连接端子与连接用电极电连接，通过绝缘树脂等将半导体元件周围密封。
另外，也有通过如下工序而构成的：用导电基板代替玻璃环氧树脂或陶瓷等的印刷基板，在该导电基板上电解淀积金属，在基板上分别独立地形成半导体元件安装用的金属层和电极层，在将半导体元件安装在上述金属层上之后，将半导体元件上的电极与上述电极层电连接，用绝缘树脂层对上述基板上的半导体元件周围进行密封，从树脂密封体上剥离去除上述基板，得到露出了金属层和电极层的各背面的密封体(例如参照专利文献1的第2图、第10图)。
【专利文献1】日本特开2002-9196号公报
但是，在这种半导体装置(专利文献1、第10图)中，采用了将印刷基板、陶瓷基板等基础基板包含在半导体装置内的结构，所以存在如下课题：半导体装置在结构上增加了与基板厚度相应的厚度，妨碍薄型化。并且，印刷基板还存在如下缺点：半导体元件工作时产生的热量容易蓄积在基板自身上，散热性差。
另外，在半导体装置(专利文献1、第2图)中，在形成外部连接用电极时，采用了剥离去除树脂密封体与基板之间的粘结而使导电金属的电解淀积层露出的方法，由于电解淀积层是薄膜，所以与绝缘树脂的粘结面积小，在剥离基板时电解淀积层受到基板表面的拉伸，减弱了端子强度，存在成品率低以及印刷基板安装后的安装可靠性低等的课题。
发明内容
本发明正是为了解决上述课题而提出的，提供与现有的半导体装置相比能够实现小型、薄型化且安装可靠性优异的树脂密封型半导体装置及其制造方法。
本发明提供用于解决上述课题的树脂密封型半导体装置及其制造方法，半导体装置具有：半导体元件；多个微球(micro ball)，其上下一体地具有内部端子面和外部端子面；金属线，其将所述半导体元件与所述内部端子面电连接；以及密封体，其利用密封树脂来密封所述半导体元件、所述多个端子部的一部分和所述金属线，该半导体装置的特征在于，所述半导体元件的背面从所述密封体露出，并且，所述多个微球的一部分作为外部端子面，从所述密封体的底面呈突起状地露出。
特征在于，所述半导体元件的背面以与所述密封体的底面成一个平面的方式露出。
特征在于，所述半导体元件的背面和所述微球的至少一部分以与所述密封体的底面成一个平面的方式露出。
特征在于，所述微球从所述密封体的上面和底面露出。
特征在于，所述微球的外部露出部突出所述微球的半径以下的尺寸。
特征在于，所述微球是在塑料粒子表面上施加金、银、铝或镍等的金属镀层而形成的球，所述镀层由单一成分的镀层或多层成分的镀层形成。
特征在于，所述微球是金、银、铝或镍等的金属球，所述球由单一材料或多种材料层叠形成。
特征在于，所述微球的直径为25μm～500μm。
并且，所述制造方法具有以下工序：在形成有多个开口部的薄板的所述开口部，安装微球；将半导体元件安装在芯片焊盘部上，该芯片焊盘部设置在所述微球安装侧的除所述开口部以外的区域中；利用金属线将所述半导体元件的电极与所述微球电连接；利用绝缘树脂，以将所述微球的整体完全覆盖的方式，对所述半导体元件的安装面侧进行单面密封；从树脂密封体上去除所述薄板，露出半导体元件的背面部和微球的端部，形成为外部连接用电极；以及将所述密封体单片化成各个半导体装置。
如上所述，本发明的半导体装置采用将安装在薄板开口部的微小的微球作为端子的结构，在密封体形成后去除基础的薄板，因此，采用了不将印刷基板或引线框这样的基础部件组装到半导体装置内的结构，与以往相比，能够制造出薄型的半导体装置。并且，由于不使用印刷基板，所以，半导体元件工作时产生的热量不会蓄积于基板自身，半导体元件的散热性提高。
并且，本发明的半导体装置采用了将密封体与薄板分离来进行去除而使外部连接用电极露出的方法，所以，作为外部连接用电极的微球被密封在绝缘树脂内，并牢固地固定在树脂内，所以，从树脂密封体上分离薄板时，不会损坏端子部的连接性。特别是在使用了微球的核心采用了塑料的微球的半导体装置中，能够通过塑料的弹性，缓解/缓冲安装时产生的印刷基板与端子之间的热应力，所以，基板安装可靠性与以往相比有飞跃性的提高。
并且，在本发明的半导体装置中，在树脂密封时能够使用微球作为隔离部，通过控制模具所承受的压力，能够将半导体装置高精度地控制为期望的厚度。
附图说明
图1是说明本发明的第1实施例的半导体装置的结构的图，(a)是示出透视密封体的概略结构的立体图，(b)是侧视图，(c)是俯视图。
图2是说明本发明的第2实施例的半导体装置的结构的图，(a)是示出透视密封体的概略结构的立体图，(b)是侧视图，(c)是仰视图。
图3是说明本发明的第1实施例的半导体装置的制造方法的俯视图和剖视图。
图4是与图3相连续的说明本发明的第1实施例的半导体装置的制造方法的剖视图。
图5是与图4相连续的说明本发明的第1实施例的半导体装置的制造方法的剖视图和俯视图。
图6是本发明的第1实施例的半导体装置的剖视图。
图7是说明本发明的第2实施例的半导体装置的制造方法的剖视图。
图8是与图7相连续的说明本发明的第2实施例的半导体装置的制造方法的剖视图和俯视图。
图9是说明本发明的第3实施例的半导体装置的制造方法的俯视图和剖视图。
图10是与图9相连续的说明本发明的第3实施例的半导体装置的制造方法的剖视图。
图11是与图10相连续的说明本发明的第3实施例的半导体装置的制造方法的剖视图。
图12是与图11相连续的说明本发明的第3实施例的半导体装置的制造方法的剖视图。
图13是说明本发明的第4实施例的半导体装置的制造方法的俯视图和剖视图。
图14是与图13相连续的说明本发明的第4实施例的半导体装置的制造方法的剖视图。
图15是与图14相连续的说明本发明的第4实施例的半导体装置的制造方法的剖视图。
图16是与图15相连续的说明本发明的第4实施例的半导体装置的制造方法的剖视图。
标号说明
1：薄板；2：开口部；3：微球；4：半导体元件；5：金属线；6：树脂密封模具；7：绝缘树脂；8：胶带；9：辊子。
具体实施方式
下面，使用附图来详细说明本发明的半导体装置的结构及其制造方法的实施例。
【实施例1】
图1是示出本发明的第1实施例的树脂密封型半导体装置的一例的图，(a)是示出透视密封体的概略结构的立体图，(b)是侧视图，(c)是俯视图。
本实施例所示的半导体装置是具有6个外部连接用电极的6管脚型半导体装置。如图1(a)所示，具有：半导体元件4；作为内外部端子的导电性的微球3；用于将半导体元件4与微球3电连接的金属线5；以及利用绝缘树脂7来密封半导体元件4、微球3的一部分和金属线5的密封体。如图1(b)所示，半导体元件4的背面以与密封体的底面成一个平面的方式露出，作为外部端子，微球3的至少一部分具有从密封体的背面突出的露出部。微球3兼用作与密封体内的半导体元件4之间的内部连接用配线以及用于与安装基板之间的连接的外部连接用电极。
接着，使用具体的尺寸例来说明本实施例的半导体装置。这里，使用厚度经背面研磨至0.15mm的半导体元件4，微球3的安装间距L为0.5mm，微球3的直径为0.25mm。这里所使用的微球是使用在塑料粒子表面上实施镀镍之后实施镀金而成的球(参考：积水化学、ミクロパ一ル(Micro-Pearl)(注册商标))。将半导体元件4与微球3电连接的金属线5使用直径为20μm的金线。在本实施例中，采用了半导体元件4的上面部的高度比微球3的上面部低的向上引出的布线结构。不过，根据所要求的尺寸、金属线5的弧高的制约条件的不同，也可以采用半导体元件4的上面部的高度比微球3的上面部高的结构，并采用从半导体元件4向微球3向下引出的布线形式。如果与微球3连接的第二键合(secondbonding)的连接点为微球3的上面部的顶点，则键合的按压力稳定，能够进一步确保连接可靠性。本实施例所示的半导体装置的外形尺寸为1.6mm×1.4mm、厚度0.4mm、离板间隙(standoff)0.05mm的结构。
图3是按照每个工序而示出本发明的第1实施例中的半导体装置的制造方法的图。
首先，如图3(a)所示，使用不锈钢、铜等的导电性金属薄板1或耐热橡胶薄板或树脂薄板。例如在本实施例的情况下，准备薄板1，该薄板1是通过如下方式形成的：利用激光加工在厚度为1.0mm的不锈钢薄板上形成了圆柱形的开口部2。对开口部进行锥化，实施倒角加工。这里，图3(a)是俯视图，图3(b)是图3(a)的x1-x1剖视图。
接着，如图3(c)所示，利用植球(ball mount)法在薄板1的开口部2上安装微球3。作为球安装的方法，可以使用以下方法中的任何一种，即：一边吸附开口部分一边滑动刮板(squeegee)来进行安装，或一边振动薄板一边对球进行吸附安装。这里使用的微球3的材质为在塑料粒子表面上施加金、银、铝、镍等的金属镀层后的球，本镀层由单一成分的镀层或多层成分的镀层形成。例如在本实施例中，使用通过在塑料粒子表面上实施镀镍之后实施镀金而形成的球(参考：积水化学，ミクロパ一ル(Micro-Pearl)(注册商标))。并且，微球3也可以使用金、银、铝、镍等的金属球。上述球可以由单一材料或多种材料层叠形成。微球3使用直径为25μm～500μm大小的球。
接着，如图3(d)所示，利用粘结材料将半导体元件4固定在薄板1上。在薄板1上固定半导体元件4时，是在以下状态下进行的：将微球3吸引固定在薄板1的开口部2上、或者对所安装的所有微球3的上面进行冲压而预先使其压入固定在开口部中、或者利用粘结材料来进行固定。
接着，如图4(e)所示，将半导体元件4的电极与微球3电连接。连接是通过使用了金线、铜线或铝线的引线键合法来进行的，如上所述，其是在将微球3固定在薄板1上的状态下进行的。
接着，使用绝缘树脂7来密封半导体元件4。如图4(f)所示，在密封时，如上所述，是在将微球3固定在薄板1上的状态下进行的，这里是通过使用了环氧树脂的传递模塑法来进行的。在进行树脂密封时，也可以使用灌注(potting)法。实施例1的半导体装置如图4(g)所示，采用了除微球3的下端面以外将微球3嵌入到绝缘树脂7内的形式。
接着，在树脂的固化处理后，如图4(h)所示，从密封体上去除薄板1，露出半导体元件4和作为外部连接用电极的微球3的下端面。薄板1的去除方法是通过物理剥离、或使用了背面研磨装置等的研削、研磨、或湿法蚀刻来进行的。
接着，利用划片法，在图5(i)的树脂密封体剖视图、图5(j)的树脂密封体俯视图所示的y2-y2部，进行单片化而形成各个半导体装置。图6是示出实施例1的半导体装置的最终形态的剖视图。
【实施例2】
图2是说明本发明的第2实施例的半导体装置的结构的图，(a)是示出透视密封体的概略结构的立体图，(b)是侧视图，(c)是仰视图。
本实施例所示的半导体装置是具有6个外部连接用电极的6管脚型半导体装置。如图2(a)所示，具有：半导体元件4；作为内外部端子的导电性的微球3；将半导体元件4与微球3电连接的金属线5；以及利用绝缘树脂7来密封半导体元件4、微球3的一部分和金属线5的密封体。如图2(b)所示，半导体元件4的背面和作为外部端子的微球3的至少一部分以与密封体的底面成一个平面的方式露出。微球3兼用作与密封体内的半导体元件4之间的内部连接用布线以及用于与安装基板之间连接的外部连接用电极。
接着，使用具体的尺寸例来说明本实施例的半导体装置。这里，使用厚度经背面研磨至0.15mm的半导体元件4，微球3的安装间距L为0.5mm，微球3的直径为0.25mm。这里所使用的微球是使用在塑料粒子表面上实施镀镍之后实施镀金而成的球(参考：积水化学、ミクロパ一ル(Micro-Pearl)(注册商标))。将半导体元件4与微球3电连接的金属线5使用直径为20μm的金线。在本实施例中，采用了半导体元件4的上面部的高度比微球3的上面部低的向上引出的布线结构。不过，根据所要求的尺寸、金属线5的弧高的制约条件的不同，也可以采用半导体元件4的上面部的高度比微球3的上面部高的结构，并采用从半导体元件4向微球3向下引出的布线形式。如果与微球3连接的第二键合的连接点为微球3的上面部的顶点，则键合的按压力稳定，能够进一步确保连接可靠性。本实施例所示的半导体装置的外形尺寸为1.6mm×1.4mm、厚度0.4mm、离板间隙(standoff)0.05mm的结构。
实施例2的半导体装置的到树脂密封为止的工艺利用与实施例1的半导体装置的制造方法相同的工艺来进行。
实施例2的半导体装置与实施例1同样，如图7(a)所示，使用绝缘树脂7来密封半导体元件4。如图7(a)所示，微球3的上端面接触树脂密封模具(上模具)，在对微球施加按压力的状态下，以单面密封的方式将绝缘树脂7形成在薄板1上。这里是通过使用了环氧树脂的传递模塑法来进行的。实施例2的半导体装置如图7(b)所示，采用与树脂密封模具接触的微球3的上端面露出的形式。
接着，如图7(c)所示，与实施例1同样，在树脂的固化处理后，从密封体上去除薄板1，露出半导体元件4和作为外部连接用电极的微球3的下端面。薄板1的去除方法是通过物理剥离、或使用了背面研磨装置等的研削、研磨、或湿法蚀刻来进行的。实施例2的半导体装置在半导体装置的上下表面上露出外部连接用电极。
接着，利用划片法，在图8(d)的树脂密封体剖视图、图8(e)的树脂密封体俯视图所示的y2-y2部，进行单片化而形成各个半导体装置。图8(f)示出了实施例2的半导体装置的最终形态(剖视图)。
【实施例3】
图9是按照每个工序而示出本发明的第3实施例的半导体装置的制造方法的图。
首先，如图9(a)所示，使用不锈钢、铜等的导电性金属薄板1或耐热橡胶、树脂薄板，例如在本实施例的情况下，是在厚度为0.08mm的铜薄板上，通过使用了冲压机的冲压加工来形成圆柱形的开口部2。还可以对开口部进行锥化，实施倒角加工。图9(a)是俯视图，图9(b)～图9(j)是图9(a)的x2-x2所示的位置的按工序顺序的剖视图。
接着，如图9(c)所示，在薄板1的与形成了锥度的面相反侧的面上，贴附UV胶带8。
接着，如图9(d)所示，通过振动薄板1或者滑动刮板来将微球3安装在开口部2上。这里使用的微球3的材质为在塑料粒子表面上施加金、银、铝、镍等的金属镀层后的球。本镀层由单一成分的镀层或多层成分的镀层形成。例如在本实施例中，使用通过在塑料粒子表面上实施镀镍之后实施镀金而形成的球(参考：积水化学，ミクロパ一ル(Micro-Pearl)(注册商标))。也可以不使用塑料粒子，而是使用以铜、镍等的金属粒子为核心，施加金、银、铝、镍、钯等的单一成分或多层的镀层而形成的金属球。微球3使用直径为25μm～500μm大小的球。
接着，如图10(e)所示，利用辊子9对微球3的上面部进行冲压，如图10(f)所示，将微球3固定在胶带的粘结部内。
接着，如图10(g)所示，通过粘结材料(未图示)将半导体元件4连接在薄板1上。
接着，如图10(h)所示，将电极与微球3电连接。连接是通过使用了金线、铜线或铝线的引线键合法来进行的，如上所述，其是在经由胶带8将微球3固定在薄板1上的状态下进行的。这里，使用20μm的金线。
接着，使用绝缘树脂7来密封半导体元件4。如图11(i)所示，在密封时，如上所述，是在经由胶带8将微球3固定在薄板1上的状态下进行的，这里，通过传递模塑法，将绝缘树脂7注入到树脂密封模具6内。在进行绝缘树脂密封时，也可以使用灌注法来代替传递模塑法。实施例3的半导体装置如图11(j)所示，采用了除微球3的下端面以外将微球3嵌入到绝缘树脂7内的形式。
接着，在对树脂进行固化处理后，如图11(k)所示，从密封体上去除薄板1和胶带8，露出半导体元件4和作为外部连接用电极的微球3的下端面。薄板1的去除是通过物理剥离、或使用了背面研磨装置等的研削、研磨、或湿法蚀刻等方法来进行的。
接着，利用划片法，在图12(l)的树脂密封体剖视图和图12(m)的树脂密封体俯视图所示的y2-y2部，进行单片化而形成为各个半导体装置。图12(n)示出了实施例3的半导体装置的最终形态(剖视图)。
【实施例4】
图13是按照每个工序而示出本发明的第4实施例的半导体装置的制造方法的图。
首先，如图13(a)所示，使用不锈钢、铜等的导电性金属薄板1或耐热橡胶、树脂薄板，例如在本实施例的情况下，是在厚度为0.08mm的铜薄板上，通过使用了冲压机的冲压加工来形成圆柱形和四方形的开口部2。也可以对开口部进行锥化，实施倒角加工。图13(a)是俯视图，图13(b)～图13(k)是图13(a)的x2-x2所示的位置的按工序顺序的剖视图。
接着，如图13(c)所示，在薄板1的与形成了锥度的面相反侧的面上贴附UV胶带8。
接着，如图13(d)所示，通过植球法将微球3安装在圆柱形的开口部2上。这里使用的微球3的材质使用在塑料粒子表面上施加金、银、铝、镍等的金属镀层后的球。本镀层由单一成分的镀层或多层成分的镀层形成。例如在本实施例中，使用通过在塑料粒子表面上实施镀镍之后实施镀金而形成的球(参考：积水化学，ミクロパ一ル(Micro-Pearl)(注册商标))。也可以不使用塑料粒子，而是使用以铜、镍等的金属粒子为核心，施加金、银、铝、镍、钯等的单一成分或多层成分的镀层而形成的金属球。微球3使用直径为25μm～500μm大小的球。
接着，如图14(e)所示，利用辊子9对微球3的上面部进行冲压，如图14(f)所示，将微球3固定在胶带的粘结部内。
接着，如图14(g)所示，经由四方形的开口部2，利用胶带8连接半导体元件4。
接着，如图14(h)所示，将电极与微球3进行电连接。连接是通过使用了金线、铜线或铝线的引线键合法来进行的，且如上所述，其是在经由胶带8将微球3固定在薄板1上的状态下进行的。这里，使用20μm的金线。
接着，使用绝缘树脂7来密封半导体元件4。如图15(i)所示，在密封时，如上所述，是在经由胶带8将微球3固定在薄板1上的状态下进行的，这里，通过传递模塑法，将绝缘树脂7注入到树脂密封模具6内。在进行绝缘树脂密封时，也可以使用灌注法来代替传递模塑法。实施例4的半导体装置如图15(j)所示，采用了除微球3的下端面以外将微球3嵌入到绝缘树脂7内的形式。
接着，在对树脂进行固化处理后，如图15(k)所示，从密封体上去除薄板1和胶带8，露出半导体元件4和作为外部连接用电极的微球3的下端面。薄板1的去除是通过物理剥离、或使用了背面研磨装置等的研削、研磨、或湿法蚀刻等方法来进行的。
接着，利用划片法，在图16(l)的树脂密封体剖视图和图16(m)的树脂密封体俯视图所示的y2-y2部，进行单片化而形成为各个半导体装置。图16(n)示出了实施例4的半导体装置的最终形态(剖视图)。

Claims (23)

1.一种树脂密封型半导体装置，其特征在于，该树脂密封型半导体装置由以下部分构成：
半导体元件；
多个微球，其配置在所述半导体元件的周围；
金属线，其将所述半导体元件与所述多个微球各自的作为第1部分的内部端子面电连接；以及
密封体，其利用密封树脂来密封所述半导体元件、所述多个微球各自的区域和所述金属线，
所述半导体元件的背面从所述密封体露出，所述多个微球各自的第2部分作为外部连接用电极，从所述密封体的底面呈突起状地露出。
2.根据权利要求1所述的树脂密封型半导体装置，其特征在于，
所述半导体元件的背面以与所述密封体的底面成一个平面的方式露出地形成。
3.根据权利要求1所述的树脂密封型半导体装置，其特征在于，
所述半导体元件的背面和所述微球的至少一部分以与所述密封体的底面成一个平面的方式露出地形成。
4.根据权利要求1所述的树脂密封型半导体装置，其特征在于，
所述微球从所述密封体的上面和底面露出地形成。
5.根据权利要求1所述的树脂密封型半导体装置，其特征在于，
所述微球的外部连接用电极形成为，从所述密封体底面突出所述微球的半径以下的尺寸。
6.根据权利要求1所述的树脂密封型半导体装置，其特征在于，
所述微球是在塑料粒子表面上施加了金、银、铝或镍的金属镀层的球，所述镀层由单一成分的镀层或多层成分的镀层形成。
7.根据权利要求1所述的树脂密封型半导体装置，其特征在于，
所述微球是金、银、铝或镍的金属球，所述球由单一材料或多种材料层叠形成。
8.根据权利要求1所述的树脂密封型半导体装置，其特征在于，
所述微球的直径为25μm～500μm。
9.一种树脂密封型半导体装置的制造方法，其特征在于，该制造方法具有以下工序：
在形成有多个开口部的薄板的所述开口部，安装微球；
将半导体元件安装在芯片焊盘部上，该芯片焊盘部设置在所述微球的安装侧的除所述开口部以外的区域中；
利用金属线将所述半导体元件的电极与所述微球电连接；
利用绝缘树脂对所述半导体元件的安装面侧进行单面密封；
从树脂密封体上去除所述薄板，露出所述半导体元件的背面部和所述微球的下端部，形成为外部连接用电极；以及
将所述密封体单片化成各个半导体装置。
10.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述单面密封的工序中，用绝缘树脂完全覆盖所述微球的上端部。
11.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述单面密封的工序中，以露出所述微球的上端部的方式，用绝缘树脂进行覆盖。
12.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
所述薄板是不锈钢或铜的金属材料，或者是耐热橡胶或耐热树脂材料。
13.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
形成在所述薄板上的多个开口部由圆柱状的贯通孔或圆柱状的非贯通孔形成。
14.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
所述多个开口部是通过蚀刻法、使用了冲压机的冲压加工或激光加工而形成的。
15.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
所述微球是在塑料粒子表面上施加了金、银、铝或镍的金属镀层的球，所述镀层由单一成分的镀层或多层成分的镀层形成。
16.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
所述微球是金、银、铝或镍的金属球，所述球由单一材料或多种材料层叠形成。
17.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
所述微球的直径为25μm～500μm。
18.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在将所述微球安装在所述薄板的开口部上的工序中，通过植球法、吸引法、刮板法或使薄板振动来安装所述微球。
19.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在将所述微球固定在所述薄板的开口部上的工序中，通过按压固定、吸引固定或胶带的粘结材料来固定所述微球。
20.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在将所述半导体元件的电极与所述微球电连接的工序中，在通过吸引、按压或贴附在所述薄板背面的胶带的粘结材料将所述微球固定在薄板的开口部上的状态下，通过引线键合法，用金线、铜线或铝线将所述半导体元件上的电极与所述微球电连接。
21.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在用所述绝缘树脂进行密封的工序中，所述树脂密封是通过灌注法或传递模塑法来进行的，在通过吸引或粘结材料将所述微球固定在薄板的开口部上的状态下，将其嵌入到所述绝缘树脂内。
22.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在从树脂密封体上去除所述薄板而露出所述半导体元件和作为外部连接用电极的所述微球的下端部的工序中，其方法是通过物理剥离、使用了背面研磨装置等的研削、研磨、或湿法蚀刻来进行的。
23.根据权利要求9所述的树脂密封型半导体装置的制造方法，其特征在于，
在将去除所述薄板后的树脂密封体单片化成各个半导体装置的工序中，使用划片法。
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