CN101901788A - 树脂密封型半导体装置及其制造方法 - Google Patents
树脂密封型半导体装置及其制造方法 Download PDFInfo
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- CN101901788A CN101901788A CN2010101136566A CN201010113656A CN101901788A CN 101901788 A CN101901788 A CN 101901788A CN 2010101136566 A CN2010101136566 A CN 2010101136566A CN 201010113656 A CN201010113656 A CN 201010113656A CN 101901788 A CN101901788 A CN 101901788A
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 172
- 229920005989 resin Polymers 0.000 title claims abstract description 87
- 239000011347 resin Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 238000007789 sealing Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 38
- 239000011805 ball Substances 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- 239000002390 adhesive tape Substances 0.000 claims description 14
- 229920000426 Microplastic Polymers 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 238000000227 grinding Methods 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 241000218202 Coptis Species 0.000 claims description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000011806 microball Substances 0.000 claims description 4
- 230000010412 perfusion Effects 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 12
- 230000001815 facial effect Effects 0.000 description 10
- 238000007747 plating Methods 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
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- H01L2224/45012—Cross-sectional shape
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/48505—Material at the bonding interface
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85455—Nickel (Ni) as principal constituent
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H01L2924/01—Chemical elements
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
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- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
Description
Claims (23)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-026507 | 2009-02-06 | ||
JP2009026507 | 2009-02-06 | ||
JP2009-258415 | 2009-11-11 | ||
JP2009258415A JP5588150B2 (ja) | 2009-02-06 | 2009-11-11 | 樹脂封止型半導体装置 |
Publications (2)
Publication Number | Publication Date |
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CN101901788A true CN101901788A (zh) | 2010-12-01 |
CN101901788B CN101901788B (zh) | 2014-10-29 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010113656.6A Expired - Fee Related CN101901788B (zh) | 2009-02-06 | 2010-02-05 | 树脂密封型半导体装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8703532B2 (zh) |
JP (1) | JP5588150B2 (zh) |
KR (1) | KR101665963B1 (zh) |
CN (1) | CN101901788B (zh) |
TW (1) | TWI478296B (zh) |
Cited By (4)
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CN102786028A (zh) * | 2012-07-17 | 2012-11-21 | 西南交通大学 | 一种用于大面积摩擦诱导微/纳米加工的多针尖阵列的制作方法 |
CN102832141A (zh) * | 2012-08-18 | 2012-12-19 | 孙青秀 | 一种基于框架的无载体式封装件的制作工艺 |
CN105359263A (zh) * | 2013-07-03 | 2016-02-24 | 罗森伯格高频技术有限及两合公司 | 包括具有电介质涂层和金属涂层的配线的无衬底裸片封装体及其制造方法 |
CN110517963A (zh) * | 2019-09-05 | 2019-11-29 | 合肥矽迈微电子科技有限公司 | 一种环膜结构注塑工艺 |
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JP5642473B2 (ja) | 2010-09-22 | 2014-12-17 | セイコーインスツル株式会社 | Bga半導体パッケージおよびその製造方法 |
DE102015212177A1 (de) * | 2015-06-30 | 2017-01-05 | Osram Gmbh | Schaltungsträger für eine elektronische Schaltung und Verfahren zum Herstellen eines derartigen Schaltungsträgers |
CN105489509A (zh) * | 2015-12-25 | 2016-04-13 | 华天科技(西安)有限公司 | 应用钢网印刷技术优化点胶工艺的光学传感芯片封装方法 |
SG11202113245YA (en) * | 2019-09-13 | 2021-12-30 | Showa Denko Kk | Laminate and method for producing same |
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- 2010-02-05 KR KR1020100011105A patent/KR101665963B1/ko active IP Right Grant
- 2010-02-05 CN CN201010113656.6A patent/CN101901788B/zh not_active Expired - Fee Related
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CN102786028A (zh) * | 2012-07-17 | 2012-11-21 | 西南交通大学 | 一种用于大面积摩擦诱导微/纳米加工的多针尖阵列的制作方法 |
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CN102832141A (zh) * | 2012-08-18 | 2012-12-19 | 孙青秀 | 一种基于框架的无载体式封装件的制作工艺 |
CN105359263A (zh) * | 2013-07-03 | 2016-02-24 | 罗森伯格高频技术有限及两合公司 | 包括具有电介质涂层和金属涂层的配线的无衬底裸片封装体及其制造方法 |
CN105359263B (zh) * | 2013-07-03 | 2018-07-06 | 罗森伯格高频技术有限及两合公司 | 包括具有电介质涂层和金属涂层的配线的无衬底裸片封装体及其制造方法 |
CN110517963A (zh) * | 2019-09-05 | 2019-11-29 | 合肥矽迈微电子科技有限公司 | 一种环膜结构注塑工艺 |
Also Published As
Publication number | Publication date |
---|---|
TW201036118A (en) | 2010-10-01 |
US20140117544A1 (en) | 2014-05-01 |
US20100200982A1 (en) | 2010-08-12 |
KR101665963B1 (ko) | 2016-10-24 |
KR20100090666A (ko) | 2010-08-16 |
JP2010206162A (ja) | 2010-09-16 |
CN101901788B (zh) | 2014-10-29 |
US9490224B2 (en) | 2016-11-08 |
JP5588150B2 (ja) | 2014-09-10 |
US8703532B2 (en) | 2014-04-22 |
TWI478296B (zh) | 2015-03-21 |
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