CN101887751A - 用于工厂编程相变存储器的专用接口 - Google Patents
用于工厂编程相变存储器的专用接口 Download PDFInfo
- Publication number
- CN101887751A CN101887751A CN2010101951580A CN201010195158A CN101887751A CN 101887751 A CN101887751 A CN 101887751A CN 2010101951580 A CN2010101951580 A CN 2010101951580A CN 201010195158 A CN201010195158 A CN 201010195158A CN 101887751 A CN101887751 A CN 101887751A
- Authority
- CN
- China
- Prior art keywords
- volatile memory
- memory devices
- memory device
- phase change
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/464,036 | 2009-05-11 | ||
US12/464,036 US8176232B2 (en) | 2009-05-11 | 2009-05-11 | Dedicated interface to factory program phase-change memories |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101887751A true CN101887751A (zh) | 2010-11-17 |
CN101887751B CN101887751B (zh) | 2014-07-09 |
Family
ID=43063091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010195158.0A Active CN101887751B (zh) | 2009-05-11 | 2010-05-11 | 用于工厂编程相变存储器的专用接口 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8176232B2 (zh) |
JP (1) | JP5410368B2 (zh) |
KR (1) | KR101597134B1 (zh) |
CN (1) | CN101887751B (zh) |
DE (1) | DE102010018762B4 (zh) |
SG (1) | SG166730A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102637453A (zh) * | 2012-02-17 | 2012-08-15 | 北京时代全芯科技有限公司 | 一种包括串行输入输出接口的相变存储器 |
US11496335B2 (en) * | 2020-10-16 | 2022-11-08 | Dominant Technologies (Singapore) Pte Ltd | Dynamically addressable daisy-chained serial communication with configurable physical layer interfaces |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100948384B1 (ko) * | 2006-11-29 | 2010-03-22 | 삼성전자주식회사 | 권리객체의 이동이 가능한 디바이스와 휴대형 저장 장치 및권리객체의 이동 방법 |
US8804411B1 (en) | 2009-09-11 | 2014-08-12 | Micron Technology, Inc | Dual mode clock and data scheme for memory programming |
US8954824B2 (en) | 2012-02-28 | 2015-02-10 | Micron Technology, Inc. | Error detection or correction of stored signals after one or more heat events in one or more memory devices |
US10440644B2 (en) * | 2012-06-29 | 2019-10-08 | Qualcomm Incorporated | Methods and apparatus for turbo decoder throttling |
US9952879B2 (en) * | 2012-08-30 | 2018-04-24 | Microsoft Technology Licensing, Llc | Application pre-layout in byte-addressable persistent random access memory |
US9003241B2 (en) * | 2013-02-01 | 2015-04-07 | Telefonaktiebolaget L M Ericsson (Publ) | Reporting errors on serial interfaces to application layers for flexible error handling approach selection |
US9824004B2 (en) | 2013-10-04 | 2017-11-21 | Micron Technology, Inc. | Methods and apparatuses for requesting ready status information from a memory |
US10108372B2 (en) | 2014-01-27 | 2018-10-23 | Micron Technology, Inc. | Methods and apparatuses for executing a plurality of queued tasks in a memory |
US9454310B2 (en) * | 2014-02-14 | 2016-09-27 | Micron Technology, Inc. | Command queuing |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030076243A1 (en) * | 2001-10-23 | 2003-04-24 | Chen Chien Chih | Shared interface device |
CN1637737A (zh) * | 2003-11-03 | 2005-07-13 | 旺宏电子股份有限公司 | 具有配置初始化功能的内电路配置结构 |
CN1881205A (zh) * | 2005-06-17 | 2006-12-20 | 艾默生网络能源***有限公司 | 快速编程/调试设备 |
CN101313287A (zh) * | 2005-10-13 | 2008-11-26 | 桑迪士克股份有限公司 | 经由嵌入式控制器初始化快闪存储设备 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5966723A (en) * | 1997-05-16 | 1999-10-12 | Intel Corporation | Serial programming mode for non-volatile memory |
US7966429B2 (en) * | 2007-05-28 | 2011-06-21 | Super Talent Electronics, Inc. | Peripheral devices using phase-change memory |
US6715041B2 (en) * | 2002-01-28 | 2004-03-30 | M-Systems Flash Disk Pioneers Ltd. | Non-volatile memory device with multiple ports |
KR100478567B1 (ko) * | 2002-08-22 | 2005-03-22 | 엠디에스테크놀로지 주식회사 | 경계주사열을 이용한 플래시롬 프로그래밍 방법 |
US7346784B1 (en) * | 2002-08-29 | 2008-03-18 | Xilinx, Inc. | Integrated circuit device programming with partial power |
JP2006018656A (ja) * | 2004-07-02 | 2006-01-19 | Sharp Corp | マイクロコンピュータシステム、半導体装置、及び、無線タグ |
US7761674B2 (en) * | 2005-12-30 | 2010-07-20 | Intel Corporation | Identifier associated with memory locations for managing memory accesses |
CN101292350B (zh) * | 2005-10-17 | 2012-08-22 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
WO2007141865A1 (ja) * | 2006-06-08 | 2007-12-13 | Renesas Technology Corp. | 半導体装置及びその製造方法 |
US7619936B2 (en) * | 2006-11-16 | 2009-11-17 | Qimonda North America Corp. | System that prevents reduction in data retention |
JP4353336B2 (ja) * | 2006-12-26 | 2009-10-28 | エルピーダメモリ株式会社 | 半導体記憶装置及びそのプログラム方法 |
US7979625B2 (en) * | 2007-11-27 | 2011-07-12 | Spansion Llc | SPI bank addressing scheme for memory densities above 128Mb |
JP2009176147A (ja) * | 2008-01-25 | 2009-08-06 | Nec Corp | 電子機器および電子機器のメモリアクセス許可判別方法 |
-
2009
- 2009-05-11 US US12/464,036 patent/US8176232B2/en active Active
-
2010
- 2010-04-21 SG SG201002796-9A patent/SG166730A1/en unknown
- 2010-04-29 DE DE102010018762.3A patent/DE102010018762B4/de active Active
- 2010-05-07 KR KR1020100043045A patent/KR101597134B1/ko active IP Right Grant
- 2010-05-10 JP JP2010120973A patent/JP5410368B2/ja active Active
- 2010-05-11 CN CN201010195158.0A patent/CN101887751B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030076243A1 (en) * | 2001-10-23 | 2003-04-24 | Chen Chien Chih | Shared interface device |
CN1637737A (zh) * | 2003-11-03 | 2005-07-13 | 旺宏电子股份有限公司 | 具有配置初始化功能的内电路配置结构 |
CN1881205A (zh) * | 2005-06-17 | 2006-12-20 | 艾默生网络能源***有限公司 | 快速编程/调试设备 |
CN101313287A (zh) * | 2005-10-13 | 2008-11-26 | 桑迪士克股份有限公司 | 经由嵌入式控制器初始化快闪存储设备 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102637453A (zh) * | 2012-02-17 | 2012-08-15 | 北京时代全芯科技有限公司 | 一种包括串行输入输出接口的相变存储器 |
CN102637453B (zh) * | 2012-02-17 | 2015-05-06 | 北京时代全芯科技有限公司 | 一种包括串行输入输出接口的相变存储器 |
US11496335B2 (en) * | 2020-10-16 | 2022-11-08 | Dominant Technologies (Singapore) Pte Ltd | Dynamically addressable daisy-chained serial communication with configurable physical layer interfaces |
Also Published As
Publication number | Publication date |
---|---|
KR101597134B1 (ko) | 2016-02-24 |
DE102010018762B4 (de) | 2020-11-05 |
SG166730A1 (en) | 2010-12-29 |
KR20100122061A (ko) | 2010-11-19 |
DE102010018762A1 (de) | 2011-02-03 |
US8176232B2 (en) | 2012-05-08 |
JP5410368B2 (ja) | 2014-02-05 |
US20100287435A1 (en) | 2010-11-11 |
JP2011018431A (ja) | 2011-01-27 |
CN101887751B (zh) | 2014-07-09 |
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C14 | Grant of patent or utility model | ||
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ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: NICHOLAS HENDRICKSON Effective date: 20150415 Owner name: MICRON TECHNOLOGY, INC. Free format text: FORMER OWNER: HENGYI COMPANY Effective date: 20150415 Owner name: HENGYI COMPANY Free format text: FORMER OWNER: KERRY DEAN TEDROW Effective date: 20150415 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20150415 Address after: Idaho Patentee after: Micron Technology Co.,Ltd. Address before: Swiss Rolle Patentee before: NUMONYX B.V. Effective date of registration: 20150415 Address after: Swiss Rolle Patentee after: NUMONYX B.V. Address before: California, USA Patentee before: Tedrow Kerry Dean Patentee before: Hendrickson Nicholas |