CN101872775A - 用于减少串扰的多层图像传感器像素结构 - Google Patents
用于减少串扰的多层图像传感器像素结构 Download PDFInfo
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- CN101872775A CN101872775A CN201010159246A CN201010159246A CN101872775A CN 101872775 A CN101872775 A CN 101872775A CN 201010159246 A CN201010159246 A CN 201010159246A CN 201010159246 A CN201010159246 A CN 201010159246A CN 101872775 A CN101872775 A CN 101872775A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
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Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/430,006 | 2009-04-24 | ||
US12/430,006 US7875918B2 (en) | 2009-04-24 | 2009-04-24 | Multilayer image sensor pixel structure for reducing crosstalk |
Publications (2)
Publication Number | Publication Date |
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CN101872775A true CN101872775A (zh) | 2010-10-27 |
CN101872775B CN101872775B (zh) | 2012-11-28 |
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CN2010101592465A Active CN101872775B (zh) | 2009-04-24 | 2010-04-26 | 用于减少串扰的多层图像传感器像素结构 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7875918B2 (zh) |
EP (1) | EP2244296B1 (zh) |
CN (1) | CN101872775B (zh) |
TW (1) | TWI416717B (zh) |
Cited By (15)
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CN102222678A (zh) * | 2011-06-22 | 2011-10-19 | 格科微电子(上海)有限公司 | Cmos图像传感器及其形成方法 |
CN102468310A (zh) * | 2010-11-17 | 2012-05-23 | 联咏科技股份有限公司 | 影像传感器 |
CN102769022A (zh) * | 2011-05-05 | 2012-11-07 | 全视科技有限公司 | 用于提供图像感测像素的衬底的导电性的方法、设备及*** |
CN103022069A (zh) * | 2013-01-10 | 2013-04-03 | 上海中科高等研究院 | 图像传感器 |
CN103094290A (zh) * | 2011-11-07 | 2013-05-08 | 台湾积体电路制造股份有限公司 | 采用共形掺杂的图像传感器沟槽隔离 |
CN103581580A (zh) * | 2012-07-25 | 2014-02-12 | 全视科技有限公司 | 用于低暗电流cmos像素单元的接地触点结构 |
CN105518861A (zh) * | 2013-06-20 | 2016-04-20 | 斯坦舍有限公司 | 用于cmos传感器的栅控电荷调制器件 |
CN105575981A (zh) * | 2014-10-03 | 2016-05-11 | 力晶科技股份有限公司 | 具有深阱结构的影像感应器及其制作方法 |
CN107293559A (zh) * | 2016-04-05 | 2017-10-24 | 格科微电子(上海)有限公司 | Rgbir图像传感器 |
CN104037181B (zh) * | 2012-11-29 | 2018-11-23 | 英飞凌科技股份有限公司 | 光生电荷载流子的控制 |
CN110061023A (zh) * | 2019-04-30 | 2019-07-26 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
CN110710000A (zh) * | 2017-06-27 | 2020-01-17 | ams有限公司 | 具有免受环境背光影响的保护的半导体光检测器器件 |
CN111279493A (zh) * | 2017-10-27 | 2020-06-12 | 拉芳德利责任有限公司 | 电离辐射和电离粒子的集成传感器 |
CN113571537A (zh) * | 2020-04-29 | 2021-10-29 | 爱思开海力士有限公司 | 图像传感器 |
CN114697580A (zh) * | 2020-12-29 | 2022-07-01 | 爱思开海力士有限公司 | 图像感测装置 |
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KR100870821B1 (ko) * | 2007-06-29 | 2008-11-27 | 매그나칩 반도체 유한회사 | 후면 조사 이미지 센서 |
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US20110198689A1 (en) * | 2010-02-17 | 2011-08-18 | Suku Kim | Semiconductor devices containing trench mosfets with superjunctions |
JP5645513B2 (ja) | 2010-07-07 | 2014-12-24 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5697371B2 (ja) * | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5751766B2 (ja) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5643555B2 (ja) | 2010-07-07 | 2014-12-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5656484B2 (ja) | 2010-07-07 | 2015-01-21 | キヤノン株式会社 | 固体撮像装置および撮像システム |
CN102403256B (zh) * | 2010-09-08 | 2014-02-26 | 上海华虹宏力半导体制造有限公司 | 赝埋层及制造方法、深孔接触及三极管 |
FR2974237A1 (fr) | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Capteur d'images a eclairement par la face arriere muni d'une electrode transparente |
FR2974238A1 (fr) * | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Procede de realisation d'un capteur d'images a eclairement par la face arriere |
FR2974239A1 (fr) * | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Procede de realisation d'un capteur d'images a eclairement par la face arriere |
FR2974240A1 (fr) | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Capteur eclaire par la face arriere a isolement par jonction |
JP2013012574A (ja) * | 2011-06-29 | 2013-01-17 | Toshiba Corp | 固体撮像装置および固体撮像装置の製造方法 |
US8652868B2 (en) * | 2012-03-01 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implanting method for forming photodiode |
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US9773824B2 (en) * | 2012-12-13 | 2017-09-26 | Cbrite Inc. | Active matrix light emitting diode array and projector display comprising it |
US11830954B2 (en) * | 2013-05-22 | 2023-11-28 | W&wsens Devices Inc. | Microstructure enhanced absorption photosensitive devices |
JP6294721B2 (ja) * | 2014-03-25 | 2018-03-14 | エイブリック株式会社 | イメージセンサ |
US9584744B2 (en) | 2015-06-23 | 2017-02-28 | Semiconductor Components Industries, Llc | Image sensors with voltage-biased trench isolation structures |
KR102046980B1 (ko) * | 2016-08-31 | 2019-11-20 | 쥐-레이 스위츨란드 에스에이 | 본딩 경계면에 걸친 전하 운반을 포함하는 전자기 복사선 검출기 |
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- 2010-04-23 TW TW099112883A patent/TWI416717B/zh active
- 2010-04-26 CN CN2010101592465A patent/CN101872775B/zh active Active
- 2010-12-14 US US12/967,759 patent/US8330195B2/en active Active
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Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468310A (zh) * | 2010-11-17 | 2012-05-23 | 联咏科技股份有限公司 | 影像传感器 |
CN102468310B (zh) * | 2010-11-17 | 2014-08-20 | 联咏科技股份有限公司 | 影像传感器 |
CN102769022A (zh) * | 2011-05-05 | 2012-11-07 | 全视科技有限公司 | 用于提供图像感测像素的衬底的导电性的方法、设备及*** |
CN102222678A (zh) * | 2011-06-22 | 2011-10-19 | 格科微电子(上海)有限公司 | Cmos图像传感器及其形成方法 |
CN103094290A (zh) * | 2011-11-07 | 2013-05-08 | 台湾积体电路制造股份有限公司 | 采用共形掺杂的图像传感器沟槽隔离 |
CN103094290B (zh) * | 2011-11-07 | 2015-09-16 | 台湾积体电路制造股份有限公司 | 采用共形掺杂的图像传感器沟槽隔离 |
CN103581580A (zh) * | 2012-07-25 | 2014-02-12 | 全视科技有限公司 | 用于低暗电流cmos像素单元的接地触点结构 |
CN104037181B (zh) * | 2012-11-29 | 2018-11-23 | 英飞凌科技股份有限公司 | 光生电荷载流子的控制 |
CN103022069A (zh) * | 2013-01-10 | 2013-04-03 | 上海中科高等研究院 | 图像传感器 |
CN103022069B (zh) * | 2013-01-10 | 2015-07-29 | 中国科学院上海高等研究院 | 图像传感器 |
CN105518861B (zh) * | 2013-06-20 | 2018-10-02 | 斯坦舍有限公司 | 用于cmos传感器的栅控电荷调制器件 |
CN105518861A (zh) * | 2013-06-20 | 2016-04-20 | 斯坦舍有限公司 | 用于cmos传感器的栅控电荷调制器件 |
CN105575981A (zh) * | 2014-10-03 | 2016-05-11 | 力晶科技股份有限公司 | 具有深阱结构的影像感应器及其制作方法 |
CN107293559A (zh) * | 2016-04-05 | 2017-10-24 | 格科微电子(上海)有限公司 | Rgbir图像传感器 |
CN110710000A (zh) * | 2017-06-27 | 2020-01-17 | ams有限公司 | 具有免受环境背光影响的保护的半导体光检测器器件 |
CN110710000B (zh) * | 2017-06-27 | 2024-01-23 | ams有限公司 | 具有免受环境背光影响的保护的半导体光检测器器件 |
CN111279493A (zh) * | 2017-10-27 | 2020-06-12 | 拉芳德利责任有限公司 | 电离辐射和电离粒子的集成传感器 |
CN110061023A (zh) * | 2019-04-30 | 2019-07-26 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
CN113571537A (zh) * | 2020-04-29 | 2021-10-29 | 爱思开海力士有限公司 | 图像传感器 |
CN114697580A (zh) * | 2020-12-29 | 2022-07-01 | 爱思开海力士有限公司 | 图像感测装置 |
Also Published As
Publication number | Publication date |
---|---|
US8330195B2 (en) | 2012-12-11 |
US20100271524A1 (en) | 2010-10-28 |
TWI416717B (zh) | 2013-11-21 |
EP2244296A2 (en) | 2010-10-27 |
TW201101474A (en) | 2011-01-01 |
EP2244296B1 (en) | 2014-01-08 |
EP2244296A3 (en) | 2012-06-13 |
US7875918B2 (en) | 2011-01-25 |
CN101872775B (zh) | 2012-11-28 |
US20110085067A1 (en) | 2011-04-14 |
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