CN101872723A - Germanium tunnelling diode and preparation method thereof - Google Patents
Germanium tunnelling diode and preparation method thereof Download PDFInfo
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- CN101872723A CN101872723A CN201010180596A CN201010180596A CN101872723A CN 101872723 A CN101872723 A CN 101872723A CN 201010180596 A CN201010180596 A CN 201010180596A CN 201010180596 A CN201010180596 A CN 201010180596A CN 101872723 A CN101872723 A CN 101872723A
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- germanium
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- heavy doping
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- 239000004411 aluminium Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- -1 aluminium germanium Chemical compound 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004943 liquid phase epitaxy Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 231100000252 nontoxic Toxicity 0.000 abstract 1
- 230000003000 nontoxic effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
The invention provides a germanium tunnelling diode, which has uniform texture and realizes high current density of a tunnelling device and a preparation method thereof. By adopting methods of simple spin coating and doping, metal deposition, plasma chemical vapor deposition, melt quick growth liquid phase epitaxy and the like, the invention provides a low-cost preparation method of the germanium tunnelling diode. The preparation method has the advantages of low cost of material equipment and compatibility with the conventional silicon process. Materials and the method, which are used in the preparation process, are low in cost, nontoxic and harmless; and instruments and the method are widely used for the large-scale integrated industrial manufacturing of industrial silicon.
Description
Technical field
The present invention relates to high-speed semiconductor device and quantum device field, specifically is a kind of germanium tunnelling diode and preparation method thereof.
Background technology
Along with the continuous upgrading of Moore's Law asymptotic limit and consumption, the manufacturing method thereof of high speed device has caused the great attention of research institutions and enterprise.And that germanium tunnelling diode has current density is big, and operating rate is fast, unique differential negative resistance characteristic, be easy to and advantages such as present silicon technology manufacturing technology combines, can be widely used in the RF radio circuit, high-speed oscillator, memory is in the circuit such as MULTI-VALUED LOGIC CIRCUIT.In the near future, will add germanium in the silicon device of high speed circuit, and perhaps become germanium fully, and toxicity such as other element GaAs are very big, it is very high to utilize this element to make the high speed device cost, is unfavorable for popularizing.At present domestic and international each major company is all at exploitation germanium device technology processing procedure, so the germanium tunnelling diode device is star's device of following high speed circuit.
Announced a kind of method of the GaAs/ALGaAs/InGaAs of employing material preparation resonance tunnel-through diode in U.S. Pat 6229153.But this method cost height with problem such as the silicon technology of current main-stream is incompatible, makes it be difficult for penetration and promotion again.The preparation method of tunnelling diode that domestic patent 200410006243.2 and patent 2006101472220.2 are announced all is to use the vapor phase epitaxial growth method, and this method material cost is expensive, also is difficult for penetration and promotion.
Utilize the process for vapor phase epitaxy unmatched slightly material of bandwidth of on three or five compounds of group, growing, facilitate electron tunneling to form quantum well.The toxic material of three or five compounds of group (for example GaAs) preparation process, instrument and safety requirements height to preparation cause preparation cost too high.Simultaneously in extensive integrated industrial process, because cost and technology capacitive problem still can't combine three or five family's materials and technology at present with the main flow silicon technology based on silicon technology.These two shortcomings make prior art can only be applied in special dimensions such as military affairs, can't large-scale application.
Summary of the invention
The objective of the invention is to overcome the shortcoming that exists in the prior art, overcome above-mentioned the deficiencies in the prior art, provide a kind of of the same type in the tunneling device current density the highest germanium tunnelling diode, a kind of germanium tunnelling diode preparation method with low cost is provided simultaneously.
In order to realize above purpose, the present invention by the following technical solutions:
A kind of preparation method of germanium tunnelling diode is characterized in that, comprises the steps:
Step 1: use low-doped germanium wafer to be substrate, adopt the spin coating doping method to make substrate be doped to heavy doping n type germanium wafer;
Step 2: adopt the metal sedimentation to cover the middle part of heavy doping n type germanium wafer with aluminium;
Step 3: form the tableland with wet process after the photoetching;
Step 4: using plasma chemical vapour deposition technique cvd nitride gallium covers the tableland;
Step 5: adopt rta technique, make the germanium on aluminium and surface be dissolved as liquid, form aluminium Zhe Gong Rong liquid, on cover gallium nitride and make aluminium Zhe Gong Rong liquid keep stable as miniature crucible;
Step 6: cool off after the short annealing, form heavy doping p type germanium, form tunnel-through diode with original weight Doped n-type germanium.
As a kind of preferred manufacturing procedure of the preparation method of germanium tunnelling diode, the temperature of rta technique is 500 ℃ to 700 ℃, and aluminium Zhe Gong Rong liquid height is that 100nm is to 120nm.
Further, the temperature of rta technique is preferably 600 ℃, and aluminium Zhe Gong Rong liquid height is preferably 110nm.
As the prepared product of the preparation method of germanium tunnelling diode of the present invention, a kind of germanium tunnelling diode comprises heavy doping n type germanium substrate, heavy doping p type germanium layer, aluminium germanium alloy layer, the gallium nitride compound layer repeatedly put successively from bottom to top.
Preferred as to the germanium tunnelling diode product, heavy doping p type germanium layer height is 50nm-70nm.
As the optimal selection to the germanium tunnelling diode product, heavy doping p type germanium layer height is 60nm.
Preparation method of the present invention is based on germanium, without vapor phase epitaxial growth technology, but utilizes simple spin coating to mix, and the quick growth-promoting media phase epitaxy method of melt, and it is more even to make tunnel-through diode make, and the tunneling device current density of realization is the highest in of the same type.So it is low that preparation method of the present invention has a material installation cost, with the compatible advantage of existing silicon technology, solved the shortcoming of prior art.Material that preparation process is used such as germanium, spin coating is mixed, and the aluminium cost is not high, nonhazardous.Used instrument such as plasma activated chemical vapour deposition and short annealing all are widely used in the extensive integrated industry of industrial quarters silicon and make.
Germanium and silicon belong to the periodic table in same group, all chemical similarity, and therefore, preparation method of the present invention also can be used for silicon.
Simultaneously, the invention provides the germanium tunnelling diode that this preparation method of a kind of application obtains, it is more even that this tunnel-through diode is compared existing tunnel-through diode, and the tunneling device current density of realization is the highest in of the same type.
Similarly, the SiGe tunnel-through diode with preparation method of the present invention obtains also has confers similar advantages.
Description of drawings
Schematic diagram when Fig. 1 forms the tableland for aluminium lamination covers germanium wafer;
Schematic diagram when Fig. 2 covers the tableland for gallium nitride;
Fig. 3 is the schematic diagram when forming aluminium Zhe Gong Rong liquid;
Fig. 4 is the schematic diagram of germanium tunnelling diode.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments, but be not limited thereto.
Fig. 1 is respectively the structural representation of germanium tunnelling diode preparation method in different step to Fig. 4.
As shown in Figure 1, the preparation method who describes according to the present invention uses low-doped germanium wafer (Ge) to be substrate, adopts the spin coating doping method to make substrate be doped to heavy doping n type germanium wafer (n+Ge); Adopt the metal sedimentation to cover the middle part of heavy doping n type germanium wafer with aluminium (Al) then; Form the tableland with wet process after the photoetching.The height of aluminium lamination is preferably 100nm, and certainly, the height of aluminium lamination can fluctuate in certain scope, and for example 80nm also is fine between the 120nm.
Spin coating is meant the axle rotation of substrate perpendicular to self surface, simultaneously liquid coating material is coated in on-chip technology.Semiconductor why can extensive use, and what rely on is exactly that it can change that it is electrical by implant impurity in its lattice, and this process is referred to as to mix.Impurity concentration and polarity that doping enters extrinsic semiconductor all can produce very big influence to semi-conductive conductive characteristic.Usually doping content is high more, and it is good more that semi-conductive conductivity will become, and reason is that the electron amount that can enter the conduction band can improve and increase along with doping content.The semiconductor that doping content is very high can replace partly metal because conductivity is widely used in the integrated circuit of today near metal.High-dopant concentration usually can be on n or p back additional a target "+" number.
Photoetching is an industrial step when producing semiconductor element, and the contour structures that this step will be imprinted on the photomask is transferred on the surface of matrix.General flow is that at first (the present invention is the germanium substrate) is covered with the metal that one deck is only counted nanometer thickness on substrate, is covered with one deck photoresist then on this layer metal.This layer photoresist can hardening after photoetching (generally being ultraviolet ray).By photomask only at some local photoresist by photoetching.Photoresist has different types, and some is to all ultraviolet spectrogram sensitization, and some is only to certain photoreception of spectrum, and also some is to X ray or to electron beam sensitization.On silicon, be coated with the photoresist spinner of photoresist.Post-develop resistance agent is dried.Chip is placed in the solvent of a corroding metal then, adopts wet process that the corrosion of metals of not covered by photoresist is fallen.Use the another kind of special corrosive liquid photoresist of oven dry is got rid of then, on stromal surface, just stayed the metal that one deck has covered certain zone like this, form the tableland.
As shown in Figure 2, be using plasma chemical vapour deposition technique cvd nitride gallium (Si
3N
4) schematic diagram when covering the tableland.
Chemical vapor deposition (CVD) is the technology that is used for depositing multiple material that is most widely used in the semi-conductor industry, comprises large-scale insulating material, most of metal materials and metal alloy compositions.Principle is: two or more gaseous state raw material import in the reative cell, and chemical reaction takes place each other for they then, form a kind of new material, deposit on the wafer surface.Deposition silicon nitride film (Si
3N
4) be exactly to form by silane and nitrogen reaction.For chemical reaction can be carried out under lower temperature, make coating evenly not peel off simultaneously, can utilize the activity of plasma to promote reaction, Here it is plasma chemical vapor deposition.
As shown in Figure 3, be the schematic diagram when carrying out step 5, promptly adopt rta technique, make the germanium on aluminium and surface be dissolved as liquid, form aluminium germanium (AlGe) Gong Rong liquid, on cover gallium nitride (Si
3N
4) make aluminium Zhe Gong Rong liquid keep stable as miniature crucible.The temperature of rta technique is preferably 500 ℃ to 700 ℃, and aluminium Zhe Gong Rong liquid height is preferably 100nm to 120nm.The temperature of rta technique of the present invention is preferably 600 ℃, the preferred 110nm of aluminium Zhe Gong Rong liquid height.This step behind the employing rta technique, is utilized the quick growth-promoting media phase epitaxy method of melt, generates crystal.
As shown in Figure 4, be the schematic diagram of product germanium tunnelling diode of the present invention, cool off after the short annealing, form heavy doping p type germanium (p+Ge), form tunnel-through diode with original weight Doped n-type germanium (n+Ge).
Tunnel-through diode with method preparation of the present invention can show tangible differential negative resistance.The more important thing is that can reach peak current density is 120kA/cm
2, be the highest in the current density in the tunnel-through diode (Esaki tunnel diode) of the same type.Peak current density can be compared based on the resonance tunnel-through diode of three or five families with some or be surpassed.This product can substitute the expensive tunnel-through diode based on three or five compounds of group and be applied to simulation and Digital Logical Circuits at a high speed.
Obviously the foregoing description is not a limitation of the present invention, and above-mentioned a kind of germanium tunnelling diode and preparation method thereof can also have other many variations.Preparation method for example of the present invention is based on germanium, but can produce the silicon tunnel-through diode based on silicon equally.Though gone through the present invention in conjunction with above-mentioned example, some that should be understood that professional person in the industry can expect apparently are identical, and alternative scheme is within the protection range that all falls into claim of the present invention and limited.
Claims (6)
1. the preparation method of a germanium tunnelling diode is characterized in that, comprises the steps:
Step 1: use low-doped germanium wafer to be substrate, adopt the spin coating doping method to make substrate be doped to heavy doping n type germanium wafer;
Step 2: adopt the metal sedimentation to cover the middle part of heavy doping n type germanium wafer with aluminium;
Step 3: form the tableland with wet process after the photoetching;
Step 4: using plasma chemical vapour deposition technique cvd nitride gallium covers the tableland;
Step 5: adopt rta technique, make the germanium on aluminium and surface be dissolved as liquid, form aluminium Zhe Gong Rong liquid, on cover gallium nitride and make aluminium Zhe Gong Rong liquid keep stable as miniature crucible;
Step 6: cool off after the short annealing, form heavy doping p type germanium, form tunnel-through diode with original weight Doped n-type germanium.
2. use the germanium tunnelling diode that preparation method as claimed in claim 1 obtains for one kind, it is characterized in that, comprise heavy doping n type germanium substrate, heavy doping p type germanium layer, aluminium germanium alloy layer, the gallium nitride compound layer repeatedly put successively from bottom to top.
3. preparation method according to claim 1 is characterized in that, the temperature of described rta technique is 500 ℃ to 700 ℃, and described aluminium Zhe Gong Rong liquid height is that 100nm is to 120nm.
4. preparation method according to claim 3 is characterized in that, the temperature of described rta technique is 600 ℃, and described aluminium Zhe Gong Rong liquid height is 110nm.
5. germanium tunnelling diode according to claim 2 is characterized in that, described heavy doping P type germanium layer height is 50nm-70nm.
6. germanium tunnelling diode according to claim 5 is characterized in that, described heavy doping p type germanium layer height is 60nm.
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| CN201010180596.XA CN101872723B (en) | 2010-05-24 | 2010-05-24 | Germanium tunnelling diode and preparation method thereof |
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| CN201010180596.XA CN101872723B (en) | 2010-05-24 | 2010-05-24 | Germanium tunnelling diode and preparation method thereof |
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| Publication Number | Publication Date |
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| CN101872723A true CN101872723A (en) | 2010-10-27 |
| CN101872723B CN101872723B (en) | 2014-10-08 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229153B1 (en) * | 1996-06-21 | 2001-05-08 | Wisconsin Alumni Research Corporation | High peak current density resonant tunneling diode |
| US20030219052A1 (en) * | 2002-05-21 | 2003-11-27 | University Of Massachusetts | Systems and methods using phonon mediated intersubband laser |
| CN1564325A (en) * | 2004-03-17 | 2005-01-12 | 清华大学 | Hole resonance tunnel-through diode based on Si/SiGe |
| CN101257050A (en) * | 2007-07-06 | 2008-09-03 | 韦文生 | Nanometer silicon hetero-junction bidirectional tunneling diode |
| CN101325223A (en) * | 2008-05-20 | 2008-12-17 | 无锡市纳微电子有限公司 | Nanometer silicon variable capacitance diode and method of processing the same |
| CN101656280A (en) * | 2008-08-22 | 2010-02-24 | 晶元光电股份有限公司 | Luminous element |
-
2010
- 2010-05-24 CN CN201010180596.XA patent/CN101872723B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229153B1 (en) * | 1996-06-21 | 2001-05-08 | Wisconsin Alumni Research Corporation | High peak current density resonant tunneling diode |
| US20030219052A1 (en) * | 2002-05-21 | 2003-11-27 | University Of Massachusetts | Systems and methods using phonon mediated intersubband laser |
| CN1564325A (en) * | 2004-03-17 | 2005-01-12 | 清华大学 | Hole resonance tunnel-through diode based on Si/SiGe |
| CN101257050A (en) * | 2007-07-06 | 2008-09-03 | 韦文生 | Nanometer silicon hetero-junction bidirectional tunneling diode |
| CN101325223A (en) * | 2008-05-20 | 2008-12-17 | 无锡市纳微电子有限公司 | Nanometer silicon variable capacitance diode and method of processing the same |
| CN101656280A (en) * | 2008-08-22 | 2010-02-24 | 晶元光电股份有限公司 | Luminous element |
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