CN101872119A - Preparation method of sacrificial layer structure with gentle slope - Google Patents
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Abstract
The invention discloses a preparation method of a sacrificial layer structure with a gentle slope. The method realizes the manufacture of a sacrificial layer pattern through multiple mask exposure, so that the side wall of the prepared sacrificial layer has a gentle slope shape. The sacrificial layer structure with the gentle slope can overcome the defects in the prior art, not only ensures stable electrical connectivity under the high fall of a bridge structure and reduces the deck deformation caused by the rapid height change in the climbing process of bridge legs, but also simplifies preparation process and provides a strong support for a high-performance infrared radiation array detector.
Description
Technical field
The present invention relates to the micro-electro-mechanical systems infrared thermal imaging technique field that unifies, be specifically related to a kind of preparation method with sacrificial layer structure of slight grade.
Background technology
After the conspicuous Xu Er of Britain physicist in 1800 had found infrared ray, because infrared ray has and can penetrate that night, spissatus and dense smoke etc. are surveyed and the special ability of imaging, infrared acquisition just became an important research content of researcher.Infrared eye is divided into two classes: photon detector and thermal detector.Photon detector has very high sensitivity, but need could operate as normal under all relatively large refrigerator of volume and power consumption is assisted.And thermal detector operate as normal at room temperature, compare with the photon type infrared eye, have that volume is little, in light weight, price is low and lot of advantages such as simple to operate, can be used for civil areas such as military field, public security fire-fighting, vehicle night vision, anti-stealing safety and medical diagnosis, be with a wide range of applications and market outlook.
The thermal detector that is used for infrared imaging relies upon that sensitive material absorbs infrared radiation and the temperature variation that produces, the on-the-spot every variation of temperature causes about 0.001 ℃ and above temperature variation in the detector for 1 ℃, and it is important therefore attempting to make the maximization of absorbed radiation amount.Sensitive material has the character of temperature correlation, and the amplitude of variation on this kind character allowable temperature can be surveyed, amplify and show by the applied electronics circuit.Resistance-type Microbolometer Array for example, it can utilize the resistance that occurs in some material to carry out acquisition of signal with variation of temperature.
In all various thermal detectors, advantageously to farthest improve sensitive material because of absorbing temperature rise and the resistance variations that infrared radiation produces, but heat can be carried away to the coupling part, bottom from sensitive material or propping material, thereby any thermal conduction mechanism all can weaken the result of detection of infrared thermal imaging device.This has just caused the design of detector need farthest realize the heat insulation of sensitive material or propping material.How reasonably to design microstructure and weaken to the heat conduction of bottom extremely importantly, usually the sensing unit and the substrate of infrared thermal detector are isolated, and promptly sensing unit is in vacant state.In addition electric signal is read requirement with the microstructure mechanical rigid and comprise that sensitive material need realize stable physical connection, to realize effective transmission of temperature or resistance variations.Because the volume of promptly wanting the guaranteed rigidity preferably of support section to reduce support section again in the device microstructure design weakens the heat conduction of sensitive signal as far as possible.
Adopt anisotropic wet etching job operation to carry out the preparation (Shie of silicon V-shaped structure in the micro-bridge structure of part infrared thermal imaging, Chen, etc, Journal of Microelectromechanical System, Vol.15, No.4,1996), the process of this design may be than the complexity of expectation.Similarly structure is at document (Lavrik N., etc. " Uncooled MEMS IR Imagers with Optical Readout and ImageProcessing ", Proceedings of the SPIE, Vol.6542, pp.65421E, report is also arranged 2007), they adopt the silicon substrate etching to form the supporting bridge leg, cover silicon dioxide then as sacrifice layer, carry out chemically mechanical polishing after the covering and expose bridge leg pattern, and then deposition propping material and sensitive material, carry out silicon dioxide after the etching and make the wet method of sacrifice layer and discharge to form bridge construction.U.S. Honeywell company (US005450053) in the patent of nineteen ninety-five application has also mentioned this method that the substrate silicon material corrosion is gone out V-shaped groove.These ways and be unfavorable for the making of bottom integrated CMOS driving circuit, the preparation technology's compatibility that is unfavorable for follow-up each functional layer, and be unfavorable for improving the dutycycle of kampometer sensing unit, thereby in the infrared micrometering kampometer of highdensity non-refrigeration, seldom adopt the structure of wet etching silicon groove.
Another kind of effective method adopts two or more fine bridge legs to support sensitive layer and other functional layers, in the manufacturing process of this structure, need at first prepare one deck sacrificial layer material, make each follow-up functional graphic then, at last this sacrifice layer is got rid of, make and sensitive layer film and substrate isolation only link to each other with substrate with fine bridge leg.
The correlative study of non-refrigerated infrared detector spare is carried out the earliest through research for many years in U.S. Honeywell research centre, in the patent (USOO5260225A) of Honwywell company application in 1993, mentioned the employing polysilicon and made detector as sensitive material, the oxide that the sacrificial layer material of wherein selecting for use is made for the CVD method is got rid of sacrifice layer with etching agent at last.This method at first prepares the thin film sacrificial layer complexity, moreover sacrifice layer graphically need carry out photoetching, etching, step such as remove photoresist, this need drop into more equipment and associated materials, the technological process complexity, use the wet method removal of solvents to fall sacrifice layer at last and cause subsiding of micro-bridge structure easily, and then the unit performance failure.Similarly Japanese NEC adopts polysilicon as sacrifice layer in patent US9339220B1, make detector with manganese compound or vanadium compound as sensitive material, remove this sacrifice layer with wet etching at last, there is foregoing deficiency equally in this mode.
Another microbridge based on the vanadium oxide sensitive thin film of Honeywell company prepares in the design patent (US005286976A) has mentioned the employing fotoceram as sacrificial layer material, and the detailed method for making and the effect of this layer is not described.
Raytheon company has related to the method with the sacrifice layer edge tilt in the patent (US005399897A) of a making infrared eye, adopt polydimethyl glutarimide (PMGI) as sacrifice layer in this patent, carry out deposition, photoetching and the etch step of this layer film successively, this moment, the sacrifice layer section gradient was risen steeply, thereby made PMGI melt the gradient that reduces the material pattern profile in the process of carrying out high-temperature baking then.Though this method has been slowed down the sacrifice layer gradient, the step of preparation process complexity, equipment needed thereby and material are more, have increased the preparation of devices cost.
Indigo Systems company has proposed the employing polyimide as sacrificial layer material in the patent (US006958478B2) of the infrared little radiation detector of being applied for of high fill factor, the method with the removing of photoresist by plasma discharges sacrifice layer at last.Raytheon company also adopts the sacrificial layer material of polyimide as bottom in the preparation patent (US006144030A) of small unit size infrared eye, the sacrifice layer of top layer may adopt silicon dioxide or polysilicon or polymkeric substance.Adopt polyimide as sacrifice layer among the patent ZL 200410061385.9, at first form Kapton isolated island and bridge pier hole with photoetching process, adopt metal filled bridge pier hole then, then cover and go up the THIN COMPOSITE rete, then etching THIN COMPOSITE rete forms bridge floor and bridge leg and carries out oxygen plasma removal polyimide and forms micro-bridge structure.Though adopted Kapton as sacrificial layer material in these patents, do not mentioned the detailed method for making of polyimide figure and the improvement of section slight grade.
Therefore very necessary preparing has the polyimide sacrificial layer structure that relaxes gradient, to guarantee that promptly the bridge floor electrode is communicated with the stable electricity of bottom circuit, reduce the bridge floor deformation that the rapid height change in the bridge leg climbing process causes, reduce technological process again as far as possible, reduce the cost of manufacture of device.
Summary of the invention
Problem to be solved by this invention is: how a kind of preparation method with sacrificial layer structure of slight grade is provided, this method has overcome deficiencies such as sacrifice layer preparation flow complexity in the prior art, the sacrifice layer section gradient be bigger, reduce the bridge floor deformation that the rapid height change in the bridge leg climbing process causes, reduced the cost of manufacture of device.
Technical matters proposed by the invention is to solve like this: a kind of preparation method with sacrificial layer structure of slight grade is provided, it is characterized in that, may further comprise the steps:
1. prepare the uniform sacrifice layer 30 of a layer thickness on the substrate 10 that has driving circuit 20, driving circuit 20 is reserved with the circuit interface 21 that is connected with the top layer electrode;
2. the substrate 10 that 1. obtains through step is toasted, steam and partial solvent in the sacrifice layer 30 of surface liquid stateization are volatilized;
3. the sacrifice layer 30 after the baking is carried out exposing operation: adopt the photomask blank of different mask pattern sizes to carry out multiexposure, multiple exposure, each exposure all needs the substrate figure is aimed at mask plate patterns, and it is corresponding and area is all inequality at every turn to be exposed regional and circuit interface 21;
4. will toast through the step substrate of finishing 10 that 3. exposes, carry out development operation then, the part that sacrifice layer 30 is exposed is removed, the zone corresponding with circuit interface 21 is because the difference of exposure, the developing powder difference, develop finish after sacrifice layer 30 and circuit interface 21 corresponding edges of regions present the gradient of mitigation and circuit interface 21 come out;
5. the substrate 10 that 4. step is obtained carries out the imidization operation, carries out the preparation of follow-up function film 60 then, and function film 60 covers the surface of sacrifice layer 30, presents the gradient of mitigation equally.
According to the preparation method with sacrificial layer structure of slight grade provided by the present invention, it is characterized in that, step 3. in, the number of times of exposure should be greater than or equal to 2 times.
According to the preparation method with sacrificial layer structure of slight grade provided by the present invention, it is characterized in that, step 3. in, the dimension of picture of setting photomask blank 42 is a normal size, the line size of photomask blank 41 is bigger than normal, the line size of photomask blank 43 is less than normal, carry out contraposition with photomask 41 and substrate 10 figures, carry out exposing operation then, because the dimension of picture of photomask 41 is bigger than normal than normal size, the sacrifice layer area that is exposed is less than normal, substrate 10 is motionless, change photomask blank 42 successively, photomask blank 43 is carried out the contraposition exposing operation, and the regional exposure amount corresponding with circuit interface 21 centers of exposing on substrate 10 is big, in abutting connection with the little exposure area of peripheral exposure.
According to the preparation method with sacrificial layer structure of slight grade provided by the present invention, it is characterized in that, described sacrificial layer material is that light-sensitive polyimide or other have the material of photaesthesia character, and thickness is 1～5 μ m, and wherein most thickness should be between 1.5～3 μ m.
Beneficial effect of the present invention: the present invention overcomes sacrifice layer preparation flow complexity in more aforementioned detector micro-bridge structures, the bigger deficiency that waits of the sacrifice layer section gradient, a kind of preparation method with the sacrificial layer structure that relaxes the section gradient is provided, it has realized the slight grade structure of sacrifice layer by the method for different photomask multiexposure, multiple exposures, the sacrificial layer structure of this grading guarantees that promptly the bridge floor electrode is communicated with the stable electricity of bottom circuit, reduce the bridge floor deformation that the rapid height change in the bridge leg climbing process causes, reduced preparation technology's flow process again, reduce the cost of manufacture of device, provide powerful support for for high-performance infrared radiation detector array provides.
Description of drawings
Fig. 1 is for having the substrate of bottom driving circuit, and wherein 10 is substrate, and 20 for having the driving circuit of circuit interface, and 21 is circuit interface;
Fig. 2 is the substrate synoptic diagram behind the preparation sacrifice layer 30, and 30 is sacrifice layer;
Fig. 3 is the synoptic diagram that carries out the sacrifice layer multiexposure, multiple exposure.With three exposures is example, wherein Fig. 3 (a) exposes with photomask blank 41, the sacrifice layer exposure area is 31 zones, Fig. 3 (b) is for to expose with photomask blank 42, the sacrifice layer exposure area is 32 zones, and Fig. 3 (c) is for to expose with photomask blank 43, and the sacrifice layer exposure area is 33 zones, alignment circuit interface 21 is all wanted in three exposures, and therefore three times exposure area has overlapping;
Fig. 4 is a synoptic diagram of finishing sacrifice layer pattern deposition function film 60.Tangent plane presented the slope of inclination after sacrifice layer developed among the figure, and shown in the gradient among the figure 50, behind the deposition function film 60, film has good covering in the sacrifice layer graph position with inclined ramp;
Fig. 5 is the sem test figure with ramp structure sacrifice layer figure.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described:
The sacrificial layer structure preparation flow of grading of the present invention comprises:
Substrate is carried out preceding baking flow process, and steam and partial solvent in the sacrificial layer material of feasible surface liquid state volatilize, and are beneficial to the resolution that improves lines.Baking can adopt hot plate also can adopt baking oven before realizing;
Then the sacrifice layer 30 after the baking is carried out exposing operation, need carry out multiexposure, multiple exposure with different mask, here being that example is carried out elaborating of this step with 3 blocks of photomasks: the dimension of picture of setting photomask blank 42 is a normal size, the line size of photomask blank 41 is bigger than normal, the line size of photomask blank 43 is less than normal, carry out contraposition with photomask 41 and substrate 10 figures, carry out exposing operation then, because the dimension of picture of photomask 41 is bigger than normal than normal size, therefore the sacrifice layer area that is exposed is less than normal, shown among Fig. 3 (a) 31, substrate 10 is motionless, change photomask 42 successively, photomask 43 carries out the contraposition exposing operation, and the area that exposes on substrate slice is respectively as Fig. 3 (b), among 3 (c) 32, shown in 33;
The substrate 10 that three exposures are finished carries out postexposure bake, carry out development operation then, the partial sacrifice layer material of exposure is removed, because the difference of 31,32,33 3 regional exposure amounts, the developing powder of zones of different has difference, and the gradient that presents mitigation of sacrifice layer pattern edge after development is finished is shown among Fig. 4 50, and the electrode interface 21 of development back driving circuit can the sudden and violent surface of leaking of part so that with being connected of top layer electrode;
The substrate of finishing the sacrifice layer figure is carried out the imidization operation, carry out the preparation of follow-up function film 60 after finishing again, subsequent thin film is because be to cover above the sacrifice layer, present the climbing state of mitigation equally, thereby strengthened detector bridge floor electrode and be communicated with the stable electricity of bottom circuit, reduce the bridge floor deformation that the rapid height change in the bridge leg climbing process causes simultaneously.
In substrate 10 preferably was arranged on electronic drive circuit, it allowed to provide electronic circuit to handle the signal that micro-bridge structure produces like this, and a single packoff that has micro-bridge structure device and bottom driving circuit concurrently can be provided.Driving circuit cmos circuit step best and semiconductor technology in bottom is compatible, thereby can adopt the standard process to reduce the Costco Wholesale of structure and the stability of raising device like this.Simultaneously interface with micro-bridge structure to be left finishing the later substrate of drives, circuit part can be passed to rapidly to guarantee the variation that the microbridge raying produces.What emphasize here is to reserve circuit interface with the microbridge device for the bottom circuit, and the size of interface and shape can be carried out multiple variation.
Sacrificial layer material is preferably light-sensitive polyimide, and it can be easy to prepare required shape by spin coating and photoetching method.Sacrificial layer material also can be prepared into required form by photoetching method with it for other coating materials with photo-sensitive characteristic.The thickness of sacrifice layer is approximately 1～5 μ m, and wherein most thickness should be between 1.5～3 μ m.Be appreciated that the final thickness of this sacrifice layer is determining the distance between microbridge bridge floor and the substrate.The removal of sacrifice layer can be removed with the oxygen plasma bombardment or with reactive ion etching, notes the compatibility of technology in the removal method.Here it is emphasized that the making of adopting light-sensitive polyimide material can directly finish figure as sacrifice layer with the method for exposure imaging, could be graphical and need carry out step such as etching like that without other sacrifice layers, and its last removal can be finished with plasma ashing, and without the wet method solvent.Its advantage is to simplify processing step greatly, reduces process equipment, and avoids because of removing device micro-bridge structure that sacrifice layer causes failure phenomenon such as cave in.Sacrifice layer will be left the electrode interface that the window's position will expose the bottom circuit, to make things convenient for the connection of microbridge unit testing signal.Sacrifice layer is left the size and the shape of window can carry out multiple variation.
Sacrifice layer adopts the method for multiexposure, multiple exposure to realize, said here repeatedly being meant more than or equal to 2 times is not limited to aforesaid 3 exposures.Multiexposure, multiple exposure need be used different photomask boards, the framework of these light mask patterns is basically identicals, different is that figure exists the situation that stretches out or inwardly shrink, and extension or the amount of shrinking will also require to formulate in conjunction with concrete technology and sacrifice layer gradient.In the process of carrying out multiexposure, multiple exposure, mask must be carried out contraposition with the substrate figure before each exposure, and the sequencing that exposes between the different mask is not what fix, can carry out front and back adjustment.The exposure dose of multiexposure, multiple exposure can be identical, also can be different, and setting the sacrifice layer required exposure of once exposing fully is I, then the dosage of each exposure is selected between I/10-I in the multiexposure, multiple exposure.
Sacrifice layer section after imidization is finished presents ramp structure, and the angle of ramp angles is at 20-50 °.When on sacrifice layer, adopting method deposit film such as chemical vapor deposition or evaporation or sputter, can on sacrifice layer, form good covering, film differs less with the film thickness of smooth place substrate relaxing the thickness that deposits on the slope, situation such as avoided that the film coverage rate that causes suddenly because of the sacrifice layer gradient in the original device is low, film ruptures and membrane stress is big.This has improved the electricity and the mechanical stability of infrared detector greatly.
By selecting as above layers of material and technological requirement for use, adopt the processing step of sketching previously, can finish sacrifice layer preparation with slight grade structure, the part method of processing step describes in detail in an embodiment.
Embodiment 1
The invention provides a kind of preparation method who is used for infrared radiation detector with ramp structure sacrifice layer, the preferred light-sensitive polyimide of this method is a sacrificial layer material, realizes the slight grade structure of sacrifice layer pattern side wall by the step of carrying out multiexposure, multiple exposure with different masks.
This structure is launched on the silicon substrate 10 that prepares bottom driving circuit 20, and bottom driving circuit 20 has been reserved the circuit interface 21 with the upper strata micro-bridge structure;
Before preparation polyimide (PI) film, clean substrate surface earlier, remove surface contamination.And substrate is carried out 200 ℃ toast down, to remove the steam on surface, strengthen the adhesive property of photoresist.
Carry out the coating of photosensitive polyimide film 30 with the automatic glue application track, the thickness of Kapton can be regulated by rotating speed, and can dilute to allow it reach suitable viscosity polyimide, the PI that applies is carried out baking 120 ℃ under to remove the solvent in the part glue, be beneficial to the exposure lines neatly.The thickness that PI applies is in the 1-8 mu m range;
Adopt the NIKON litho machine that PI is carried out exposing operation 3 times: at first to select for use photomask blank 41 and substrate slice to carry out contraposition, it is that 400ms carries out the substrate exposure that the exposure time is set, choosing is covered beam splitter plate 42 and is carried out contraposition with substrate 10 again, it is that 300ms carries out the substrate exposing operation that the exposure time is set, select photomask blank 43 and substrate slice to carry out contraposition then, it is that 200ms carries out the substrate exposing operation that the exposure time is set, and three times exposure backsight egative film can develop;
Deliver to automatic development track through the substrate of overexposure and carry out the development of glue, developer solution is general developer for positive photoresist TMAH, because the exposure area of different masks is inconsistent, cause the developing powder of zones of different inconsistent, the central area exposure is big, and the fringe region exposure is little, therefore the back PI figure that develops presents the gradient shape of mitigation, the PI figure need expose bottom circuit interface 21 after developing, and links to each other with the electrode with the microbridge bridge floor, shown in 50 zones among Fig. 4;
Subsequently Kapton is placed on and carries out imidization in the annealing baking oven of blanketing with inert gas and handle, the imidization temperature is to rise in the stage to be provided with, minimum is room temperature, maximum temperature is at 250 ℃-400 ℃, and constant temperature time is 30-120min, and PI thickness is in the 1-5 mu m range after the imidization, film after the imidization adopts scanning electron microscope to carry out surface test, the result as shown in Figure 5, the PI pattern edge presents the gradient of mitigation, about 40 ° of gradient size;
Adopt PECVD equipment and mixing sputtering technology to make silicon nitride functional layer 60, the thickness range of preparation silicon nitride layer is in 0.2～1 mu m range, because the side in PI hole has the gradient of mitigation, so silicon nitride film has good step to cover at place, PI hole, as shown in Figure 4;
After other functional layer preparations are finished, can carry out the etching and the release of microbridge bridge floor, because the silicon nitride functional layer has the gradient of mitigation, produce device and prevent from all to increase significantly aspect the deformation at the electricity connected sum.The micro-bridge structure of being done has good supporting stability, and rate＜0.3% that caves in of the bridge floor after the release simultaneously again can be effectively and the bottom circuit communication.
Embodiment 2
Sacrificial layer structure launches on the silicon substrate 10 that prepares bottom driving circuit 20, and bottom driving circuit 20 has been reserved the circuit interface 21 with the upper strata micro-bridge structure;
The coating procedure of thin film sacrificial layer is the same;
Adopt the NIKON litho machine that PI is carried out exposing operation 2 times: at first to select for use mask plate 41 and substrate slice to carry out contraposition, it is that 500ms carries out the substrate exposure that the exposure time is set, select photomask blank 42 and substrate slice to carry out contraposition again, it is that 300ms carries out the substrate exposing operation that the exposure time is set, and double exposure backsight egative film can develop;
Deliver to automatic development track through the substrate of overexposure and carry out the development of glue, developer solution is the developer for positive photoresist TMAH of standard, because the exposure area of different masks is inconsistent, cause the developing powder of zones of different inconsistent, the central area exposure is big, and the fringe region exposure is little, and the back PI figure that therefore develops presents the gradient shape of mitigation, the PI figure need expose bottom circuit interface 21 after developing, and links to each other with the electrode with the microbridge bridge floor;
Subsequently Kapton is placed on and carries out imidization in the annealing baking oven of blanketing with inert gas and handle; the imidization temperature is to rise in the stage to be provided with, and minimum is room temperature, and maximum temperature is at 250 ℃-400 ℃; constant temperature time is 30-120min, and PI thickness is in the 1-5 mu m range after the imidization.Film after the imidization adopts scanning electron microscope to carry out surface test, the result as shown in Figure 5, the PI pattern edge presents the gradient of mitigation, about 40 ° of gradient size;
Adopt magnetically controlled sputter method to prepare aluminium film 60, the thickness of aluminium film is in 0.05～0.3 mu m range.This layer aluminium figure covers on the sacrifice layer and with bottom circuit interface 21 and links to each other, this layer effect is changed by electricity behind the infrared radiation sensitive layer to pass to bottom layer driving circuit (20), because the side in PI hole has the gradient of mitigation, therefore silicon nitride film has good step to cover at place, PI hole, the electricity connectedness is highly stable, as shown in Figure 4.
Claims (4)
1. the preparation method with sacrificial layer structure of slight grade is characterized in that, may further comprise the steps:
1. go up the preparation uniform sacrifice layer of one layer thickness (30) at the substrate that has driving circuit (20) (10), driving circuit (20) is reserved with the circuit interface (21) that is connected with the top layer electrode;
2. the substrate (10) that 1. obtains through step is toasted, steam and partial solvent in the sacrifice layer (30) of surface liquid stateization are volatilized;
3. the sacrifice layer (30) after the baking is carried out exposing operation: adopt the photomask blank of different mask pattern sizes to carry out multiexposure, multiple exposure, each exposure all needs the substrate figure is aimed at mask plate patterns, is exposed regional corresponding with circuit interface (21) and area is all inequality at every turn;
4. will toast through the step substrate of finishing (10) that 3. exposes, carry out development operation then, the part that sacrifice layer (30) is exposed is removed, the zone corresponding with circuit interface (21) is because the difference of exposure, the developing powder difference, develop finish after sacrifice layer (30) edges of regions corresponding with circuit interface (21) present the gradient of mitigation and circuit interface (21) come out;
5. the substrate that 4. step is obtained (10) carries out the imidization operation, carries out the preparation of follow-up function film (60) then, and function film (60) covers the surface of sacrifice layer (30), presents the gradient of mitigation equally.
2. the preparation method with sacrificial layer structure of slight grade according to claim 1 is characterized in that, step 3. in, the number of times of exposure should be greater than or equal to 2 times.
3. the preparation method with sacrificial layer structure of slight grade according to claim 1 and 2, it is characterized in that, step 3. in, the dimension of picture of setting photomask blank (42) is a normal size, the line size of photomask blank (41) is bigger than normal, the line size of photomask blank (43) is less than normal, carry out contraposition with photomask blank (41) and substrate (10) figure, carry out exposing operation then, because the dimension of picture of photomask blank (41) is bigger than normal than normal size, the sacrifice layer area that is exposed is less than normal, substrate (10) is motionless, change photomask blank (42) successively, photomask blank (43) is carried out the contraposition exposing operation, and the regional exposure amount corresponding with circuit interface (21) center of exposing on substrate (10) is big, in abutting connection with the little exposure area of peripheral exposure.
4. the preparation method with sacrificial layer structure of slight grade according to claim 1 is characterized in that, described sacrifice layer (30) material is a light-sensitive polyimide, and thickness is 1～5 μ m.
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