CN101866995B - Light-emitting diode packaging structure - Google Patents
Light-emitting diode packaging structure Download PDFInfo
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- CN101866995B CN101866995B CN200910132740XA CN200910132740A CN101866995B CN 101866995 B CN101866995 B CN 101866995B CN 200910132740X A CN200910132740X A CN 200910132740XA CN 200910132740 A CN200910132740 A CN 200910132740A CN 101866995 B CN101866995 B CN 101866995B
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- bearing substrate
- emitting diode
- led
- package structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses a light-emitting diode packaging structure comprising a load-bearing substrate, at least one light-emitting diode chip, an optics element and high-thermal conduction transparent liquid, wherein the light-emitting diode chip is configured on the load-bearing substrate and is provided with an active layer. The optics element is configured on the load-bearing substrate; an enclosed space is formed between the optics element and the load-bearing substrate, and the light-emitting diode chip is arranged in the enclosed space. The high-thermal conduction transparent liquid is filled in the enclosed space. According to the invention, the high-thermal conduction transparent liquid is filled in the enclosed space, and therefore, the light-emitting diode chip not only can improve the heat conduction efficiency of the bottom thereof through the load-bearing substrate, but also can improve the heat conduction efficiency of the side wall and the top surface thereof through the high-thermal conduction transparent liquid.
Description
Technical field
The present invention relates to a kind of package structure for LED, and particularly relate to a kind of package structure for LED with high-heat conductive efficency.
Background technology
In recent years; Because the luminous efficiency of light-emitting diode constantly promotes; Make light-emitting diode begin extensively to be used in many illumination application; For example need Dashboard illumination, the traffic signal light of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed, and general lighting device etc.The principle of luminosity of light-emitting diode is to convert electrical energy into light, just light-emitting diode is applied electric current, and the combination through electronics, hole discharges with the kenel of light, and then reaches luminous effect.
Fig. 1 illustrates the profile of known luminescence diode package structure.Please with reference to Fig. 1, known package structure for LED 100 is made up of light-emitting diode chip for backlight unit 110, bearing substrate 120, lead 132, lead 134 and packing colloid 140.Wherein, light-emitting diode chip for backlight unit 110 is arranged on the bearing substrate 120, and lead 132, lead 134 are electrically connected at respectively between light-emitting diode chip for backlight unit 110 and the bearing substrate 120.Packing colloid 140 is arranged on the bearing substrate 120 and coated wire 132, lead 134.Light-emitting diode chip for backlight unit 110 mainly is through two leads 132, lead 134 are applied voltage difference so that the active layer 112 of light-emitting diode chip for backlight unit 110 is luminous; Active layer 112 also can produce heat simultaneously; If the heat that the active layer of light-emitting diode chip for backlight unit 110 112 is produced when luminous can't effectively be discharged; Order about following time at high electric current especially, light-emitting diode chip for backlight unit 110 often damages because of overheated easily.
Summary of the invention
The present invention provides the encapsulated radiating structure of a kind of package structure for LED, particularly a kind of light-emitting diode, to promote the whole heat transfer efficiency of encapsulation.
The present invention proposes a kind of package structure for LED and comprises bearing substrate, at least one light-emitting diode chip for backlight unit, optical element and high heat conduction light-transmissive fluid.Light-emitting diode chip for backlight unit is disposed on the bearing substrate, and has active layer.Optical element is disposed on the bearing substrate, form enclosure space between optical element and the bearing substrate, and light-emitting diode chip for backlight unit is arranged in enclosure space.High heat conduction light-transmissive fluid is filled in the enclosure space.Wherein, with respect to the light of the dominant wavelength that light-emitting diode chip for backlight unit sent, the light transmittance of high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.
The present invention proposes a kind of package structure for LED and comprises bearing substrate, at least one lug boss, at least one light-emitting diode chip for backlight unit, optical element and high heat conduction light-transmissive fluid.Lug boss is disposed on the bearing substrate, and has opening exposing bearing substrate, and the material of lug boss is a Heat Conduction Material.Light-emitting diode chip for backlight unit is disposed on the bearing substrate and is arranged in opening, and the width ratio in the width of opening section and light-emitting diode chip for backlight unit cross section is 1 to 1.5.Optical element is disposed on the bearing substrate, forms enclosure space between optical element and the bearing substrate, and lug boss and light-emitting diode chip for backlight unit are arranged in enclosure space.High heat conduction light-transmissive fluid is filled in the enclosure space.Wherein, with respect to the light of the dominant wavelength that light-emitting diode chip for backlight unit sent, the light transmittance of high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.
The present invention proposes a kind of package structure for LED and comprises bearing substrate, at least one bed hedgehopping portion, at least one light-emitting diode chip for backlight unit, optical element, high heat conduction light-transmissive fluid and potted component.Bed hedgehopping portion is disposed on the bearing substrate, have at least one groove with away from first end face of bearing substrate, and the material of bed hedgehopping portion is a Heat Conduction Material.Light-emitting diode chip for backlight unit is disposed on first end face of bed hedgehopping portion.Optical element is disposed on the bearing substrate, forms enclosure space between optical element and the bearing substrate, and bed hedgehopping portion and light-emitting diode chip for backlight unit are arranged in enclosure space.High heat conduction light-transmissive fluid is filled in the enclosure space, and is filled in the groove.Wherein, with respect to the light of the dominant wavelength that light-emitting diode chip for backlight unit sent, the light transmittance of high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.
Based on above-mentioned, high heat conduction light-transmissive fluid of the present invention is filled in the enclosure space, and therefore, light-emitting diode chip for backlight unit not only can promote the heat transfer efficiency of its bottom through bearing substrate, also can promote the heat transfer efficiency of its sidewall and end face through high heat conduction light-transmissive fluid.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Fig. 1 illustrates the profile of known luminescence diode package structure.
Fig. 2 illustrates the profile of the package structure for LED of the embodiment of the invention.
Fig. 3 illustrates a kind of change type of the package structure for LED of Fig. 2.
Fig. 4 A illustrates the profile of the package structure for LED of the embodiment of the invention.
Fig. 4 B illustrates a kind of variation of the package structure for LED of Fig. 4 A.
Fig. 5 illustrates the profile of the package structure for LED of the embodiment of the invention.
Fig. 6 A and Fig. 6 B illustrate two kinds of change types of the package structure for LED of Fig. 5.
Description of reference numerals
100,200,400,500: package structure for LED
110,220: light-emitting diode chip for backlight unit
112: active layer
114,222: the bottom surface
116,224: sidewall
118,226: end face
120,210: bearing substrate
132,134, C: lead
140: packing colloid
212: the surface
230: optical element
232: groove
232a: open end
234: outer rim
240: high heat conduction light-transmissive fluid
242: suspended particles
250: potted component
252: the second end faces
260: articulamentum
270: fixation kit
280, F: adhesion coating
290: the reflector
410,516: lug boss
510: bed hedgehopping portion
512: the first end faces
514: the bottom
A: inwall
D: the degree of depth
E1, E2: electrode
G: gap
H1, H2: distance
OP: opening
P: connection pad
S: enclosure space
T: groove
W1, W2, W3, W4: width
Embodiment
Fig. 2 illustrates the profile of the package structure for LED of the embodiment of the invention.Please with reference to Fig. 2, package structure for LED 200 comprises bearing substrate 210, light-emitting diode chip for backlight unit 220, optical element 230 and high heat conduction light-transmissive fluid 240.
The material of optical element 230 for example is glass, epoxy resin or transparent plastic; Wherein transparent plastic is the transparent plastic of olefinic (olefinic) or the transparent plastic of aliphat (aliphatic) (for example polypropylene or polyethylene); And aforementioned transparent plastic is difficult for deterioration when contact non-protonic solvent (solution that for example contains propylene carbonate).Transparent plastic for example is cyclic olefin copolymer (cyclic olefin copolymer), polymethylpentene (polymethylpentenes), hydrogenation cyclic olefin polymer (hydrogenated cyclo-olefin polymers) or the cyclic olefine copolymer of amorphous (amorphous cyclo-olefin copolymers).
High heat conduction light-transmissive fluid 240 is filled among the enclosure space S, and it is to possess high thermal conductivity and mobile liquid.In the present embodiment; The conductive coefficient of high heat conduction light-transmissive fluid 240 (thermal conductivity) is greater than the conductive coefficient of epoxy resin (epoxy); And when the light time of the dominant wavelength of being sent with respect to light-emitting diode chip for backlight unit 220, the light transmittance of high heat conduction light-transmissive fluid 240 (transmittance) is greater than 80%.Therefore, high heat conduction light-transmissive fluid 240 can directly contact all surfaces among the enclosure space S that is exposed to of bearing substrate 210, optical element 230 and light-emitting diode chip for backlight unit 220.Thus; Can be through heat conduction to the bearing substrate 210 and optical element 230 that flow light-emitting diode chip for backlight unit 220 is produced when luminous of high heat conduction light-transmissive fluid 240, and conduct to outside the package structure for LED 200 via bearing substrate 210 and optical element 230.It should be noted that in the present embodiment light-emitting diode chip for backlight unit 220 not only can promote the heat transfer efficiency of its bottom surface 222 through bearing substrate 210, also can promote the heat transfer efficiency of its sidewall 224 and end face 226 through high heat conduction light-transmissive fluid 240.
In the present embodiment, make electrically short circuit between the two electrode E1, E2 of light-emitting diode chip for backlight unit 220 for avoiding high heat conduction light-transmissive fluid 240, high heat conduction light-transmissive fluid 240 for example is non-conductive liquid.The material of high heat conduction light-transmissive fluid 240 be selected from silicone oil (silicon oils), Chinese wax oil (paraffin oils), olive oil (olive oils), propene carbonate (propylene carbonate), PFPE liquid one of them or other possess high thermal conductivity and mobile liquid.It should be noted that; When high heat conduction light-transmissive fluid 240 has conductivity; Can on the part of the part (for example lead C) of the electric connection of the part (for example connection pad P) of the conduction of light-emitting diode chip for backlight unit 220, light-emitting diode chip for backlight unit 220 and light-emitting diode chip for backlight unit 220 side wall active layers, form isolation layer (its material for example is an insulating material); Isolation layer can completely cut off high heat conduction light-transmissive fluid 240 and cause the element short circuit to avoid high heat conduction light-transmissive fluid 240, for example utilizes light conversion layer to wrap up light-emitting diode chip for backlight unit 220 to form isolation layer.
In the present embodiment, high heat conduction light-transmissive fluid 240 can be doped with a plurality of suspended particles 242, and for instance, high heat conduction light-transmissive fluid 240 for example is the deionized water (deionized water) that is doped with TiO 2 particles.Because suspended particles 242 can increase ray refraction and the reflection that light-emitting diode chip for backlight unit 220 is sent, so can effectively improve rising angle, the discomfort that is caused to avoid light directly to inject human eye.
High heat conduction light-transmissive fluid 240 is at room temperature having mobile liquid, and its coefficient of viscosity for example is less than 10000mPas.In the present embodiment, freeze at low temperatures for avoiding high heat conduction light-transmissive fluid 240, can in high heat conduction light-transmissive fluid 240, add freeze proof material, to keep its flowability, freeze proof material is methyl alcohol or ethylene glycol for example.
In addition, package structure for LED 200 optionally has potted component 250.Potted component 250 connects the outer rim 234 and bearing substrate 210 of optical element 230, and is positioned at outside the enclosure space S, and the material of potted component 250 for example is a metal or alloy, and wherein aforementioned alloy for example is iron cobalt nickel alloy (commercial Kovar alloy by name).The mode that potted component 250 connects bearing substrate 210 for example is to interconnect between metal and the metal, so the reliability of potted component 250 connection bearing substrates 210 is good.
In the present embodiment, enumerate following three kinds of methods that connect optical element 230 and potted component 250, but be not in order to limit the present invention.Method 1 is that optical element 230 is heated to its glass transition temperature or softening temperature, and potted component 250 is set on the outer rim 234 of optical element 230.Method 2 is elder generation's outer rim 234 metallization (for example plating, for example titanium) with optical element 230, then, utilizes scolder (not illustrating) to engage optical element 230 and potted component 250.Method 3 is to utilize fluid sealant (not illustrating) to engage optical element 230 and potted component 250, and the characteristic of aforementioned fluid sealant is near glass, and has lower softening temperature (for example being lower than 700 ℃).
In the present embodiment, enumerate following two kinds of methods that connect bearing substrate 210 and potted component 250, but be not in order to limit the present invention.Method 1 is to utilize articulamentum 260 to connect potted component 250 and bearing substrate 210, and articulamentum 260 is between potted component 250 and bearing substrate 210, and its material for example is metal or alloy (a for example scolder).The shape of articulamentum 260 can corresponding potted component 250 cross section shape and be designed to circle, quadrangle, ellipse etc., and articulamentum 260 can improve the engaging force of 210 of potted component 250 and bearing substrates, and then improves the whole reliability of encapsulation.Particularly, can on bearing substrate 210, form scolder earlier, the potted component 250 that will be connected with optical element 230 more afterwards is disposed on the scolder and adds hot solder.
Fig. 3 illustrates a kind of change type of the package structure for LED of Fig. 2.Please with reference to Fig. 3, method 2 is for being fixed on the fixation kit 270 on the bearing substrate 210 in formation on the bearing substrate 210 earlier.The mode that fixation kit 270 is fixed on the bearing substrate 210 for example is to be engaged to bearing substrate 210, to adhere to bearing substrate 210 through glue material (not illustrating) through scolder (not illustrating), or engages with the mode of ceramic powders co-sintered or fixation kit 270 is formed in one with bearing substrate 210 through fixation kit 270.Then, the potted component 250 that is connected with optical element 230 is disposed on the fixation kit 270.The part of joining afterwards, with mode heated sealant element of for example point discharge (point discharge) or laser welding (laser welding) 250 and fixation kit 270.The material of fixation kit 270 can for potted component 250 same materials, for example iron cobalt nickel alloy or Invar invar.
Fig. 4 A illustrates the profile of the package structure for LED of the embodiment of the invention, and Fig. 4 B illustrates a kind of change type of the package structure for LED of Fig. 4 A.Please with reference to Fig. 4 A, the package structure for LED 400 of present embodiment comprises bearing substrate 210, lug boss 410, light-emitting diode chip for backlight unit 220, optical element 230 and high heat conduction light-transmissive fluid 240.In addition, package structure for LED 400 optionally has potted component 250.
It should be noted that package structure for LED 400 is similar with the package structure for LED 200 of Fig. 2, the difference part only is that package structure for LED 400 is extra and has a lug boss 410.Therefore, following only just both difference parts describe in detail, both then repeat no more at something in common.
Light-emitting diode chip for backlight unit 220 is disposed on the bearing substrate 210 and is arranged in opening OP.Lug boss 410 all is arranged in the enclosure space S that is made up of optical element 230 and bearing substrate 210 with light-emitting diode chip for backlight unit 220, and high heat conduction light-transmissive fluid 240 can directly contact all surfaces among the enclosure space S that is exposed to of bearing substrate 210, optical element 230, light-emitting diode chip for backlight unit 220 and lug boss 410.
In other embodiments; If need to produce specific coloured light; Then can increase the depth D (promptly increasing the thickness of lug boss 410) of opening OP; Make the depth D of opening OP greater than the height of light-emitting diode chip for backlight unit 220 (just making the end face of light-emitting diode chip for backlight unit 220 be lower than the end face of lug boss 410), and in opening OP, insert fluorescent material.
The width W 1 in opening OP cross section is 1 to 1.5 with the ratio of the width W 2 in light-emitting diode chip for backlight unit 220 cross sections.It should be noted that in the present embodiment the width W 1 in opening OP cross section is meant when same section with the width W 2 in light-emitting diode chip for backlight unit 220 cross sections, (minimum) width W 1 of opening OP and (maximum) width W 2 of light-emitting diode chip for backlight unit 220.
Know that by aforementioned lug boss 410 is pressed close to the sidewall 224 of light-emitting diode chip for backlight unit 220, therefore, can increase the heat transfer efficiency of the sidewall 224 of light-emitting diode chip for backlight unit 220 through lug boss 410.
The ratio of the width W 1 in the opening OP cross section of the lug boss 410 that Fig. 4 A illustrates and the width W 2 in light-emitting diode chip for backlight unit 220 cross sections is greater than 1 and smaller or equal to 1.5; In other words; Between the sidewall 224 of light-emitting diode chip for backlight unit 220 and lug boss 410, can there be clearance G; And adhesion coating F can be filled in the clearance G, and the material of adhesion coating F for example is elargol, scolding tin, glass and alloy or other Heat Conduction Materials that is fit to.In addition, when the width ratio in the width in opening OP cross section and light-emitting diode chip for backlight unit 220 cross sections be that lug boss 410 for example is one-body molded or moulding separately with bearing substrate 210 greater than 1 and smaller or equal to 1.5 the time.In other words, lug boss 410 can be to form simultaneously with bearing substrate 210, or lug boss 410 is assembled on the bearing substrate 210 after the moulding separately again.When lug boss 410 and bearing substrate 210 during for moulding separately; The material of lug boss 410 for example with the bearing substrate 210 identical high thermal conductivity coefficient materials that are all; Or have the heat conduction materials with function, or be the material part identical materials with bearing substrate 210 with different other of the material of bearing substrate 210.
In addition,, in the present embodiment, can in clearance G and between light-emitting diode chip for backlight unit 220 and the bearing substrate 210, adhesion coating 280 be set, to engage light-emitting diode chip for backlight unit 220 to bearing substrate 210 and lug boss 410 please with reference to Fig. 4 B.The material of adhesion coating 280 for example is elargol, scolding tin, glass and alloy or other Heat Conduction Materials that is fit to, and therefore, adhesion coating 280 can help to promote the heat transfer efficiency of light-emitting diode chip for backlight unit 220.
Know by aforementioned; In the present embodiment; Light-emitting diode chip for backlight unit 220 can be with (light-emitting diode chip for backlight unit 220 is produced when luminous) heat conduction to below bearing substrate 210; Or contact with high heat conduction light-transmissive fluid 240 through lug boss 410, heat is conducted to outside the package structure for LED 400, with the heat transfer efficiency of lifting light-emitting diode chip for backlight unit 220 via bearing substrate 210 and high heat conduction light-transmissive fluid 240.
In addition; In the present embodiment; Can on the part that is exposed by opening OP of the inwall A of opening OP and bearing substrate 210, form reflector 290; With the reflection light that produced of light-emitting diode chip for backlight unit 220 and then improve the utilance of light, the material in reflector 290 for example is a silver or other are suitable for the material of reflection ray.In the embodiment that other do not illustrate, when the width ratio in light-emitting diode chip for backlight unit 220 cross sections was 1, the sidewall 224 of light-emitting diode chip for backlight unit 220 was fitted with lug boss 410.
Fig. 5 illustrates the profile of the package structure for LED of the embodiment of the invention.Fig. 6 A and Fig. 6 B illustrate two kinds of change types of the package structure for LED of Fig. 5.
Please with reference to Fig. 5, the package structure for LED 500 of present embodiment comprises bearing substrate 210, bed hedgehopping portion 510, light-emitting diode chip for backlight unit 220, optical element 230 and high heat conduction light-transmissive fluid 240.In addition, package structure for LED 500 optionally has potted component 250 and fixation kit (not illustrating).
It should be noted that package structure for LED 500 is similar with the package structure for LED 200 of Fig. 2, the difference part only is that package structure for LED 500 is extra and has a bed hedgehopping portion 510.Therefore, following only just both difference parts describe in detail, both are identical locates then to repeat no more.
Because groove T can increase the contact area of bed hedgehopping portion 510 and high heat conduction light-transmissive fluid 240; Therefore; When heat conduction to bed hedgehopping portion 510 that light-emitting diode chip for backlight unit 220 produces; Can be through the mobile heat that conducts to bed hedgehopping portion 510 that removes of high heat conduction light-transmissive fluid 240, and then increase the heat transfer efficiency of bed hedgehopping portion 510.
Please with reference to Fig. 6 A; In the present embodiment, bed hedgehopping portion 510 comprises bottom 514 and lug boss 516, and lug boss 516 is positioned on the bottom 514; And lug boss 516 has opening OP to expose bottom 514, and light-emitting diode chip for backlight unit 220 is disposed on the bottom 514 and is arranged in opening OP.The width W 3 in opening OP cross section and width W 4 proportionalities in light-emitting diode chip for backlight unit 220 cross sections are as being 1 to 1.5.It should be noted that because lug boss 516 is pressed close to the sidewall 224 of light-emitting diode chip for backlight unit 220, so can increase the heat transfer efficiency of the sidewall 224 of light-emitting diode chip for backlight unit 220 through lug boss 516.
The width W 3 in the opening OP cross section that Fig. 6 A illustrates is greater than 1 and smaller or equal to 1.5 with width W 4 ratios in light-emitting diode chip for backlight unit 220 cross sections.In other words, have clearance G between light-emitting diode chip for backlight unit 220 and the lug boss 516, and adhesion coating F can be filled in the clearance G, the material of adhesion coating F for example is elargol, scolding tin, glass and alloy or other Heat Conduction Materials that is fit to.At this moment, but mat lug boss 516 contact with high heat conduction light-transmissive fluid 240, promote the heat transfer efficiency of the sidewall 224 of light-emitting diode chip for backlight unit 220.Bottom 514 for example is one-body molded with lug boss 516.
In addition,, in the present embodiment, can in clearance G and between light-emitting diode chip for backlight unit 220 and the bottom 514, adhesion coating 280 be set, to engage light-emitting diode chip for backlight unit 220 to bottom 514 and lug boss 516 please with reference to Fig. 6 B.The material of adhesion coating 280 for example is elargol, scolding tin, glass and alloy or other Heat Conduction Materials that is fit to, and therefore, adhesion coating 280 can help to promote the heat transfer efficiency of light-emitting diode chip for backlight unit 220.
In addition; In the present embodiment; Can on the part that is exposed by opening OP of the inwall A of opening OP and bottom 514, form reflector 290; With the reflection light that produced of light-emitting diode chip for backlight unit 220 and then improve the utilance of light, the material in reflector 290 for example is a silver or other are suitable for the material of reflection ray.
In the embodiment that other do not illustrate, the width W 3 in opening OP cross section can be 1 with width W 4 ratios in light-emitting diode chip for backlight unit 220 cross sections, and in other words, light-emitting diode chip for backlight unit 220 is fitted with lug boss 516.At this moment; Lug boss 516 can directly be produced light-emitting diode chip for backlight unit 220 when luminous heat conduction to bearing substrate 210; And conduct to outside the package structure for LED via bearing substrate 210, with the heat transfer efficiency of the sidewall 224 that promotes light-emitting diode chip for backlight unit 220.
In sum, high heat conduction light-transmissive fluid of the present invention is filled in the enclosure space, and therefore, high heat conduction light-transmissive fluid can directly contact all surfaces in the enclosure space that is exposed to of bearing substrate, optical element and light-emitting diode chip for backlight unit.Thus, light-emitting diode chip for backlight unit not only can promote the heat transfer efficiency of its bottom through bearing substrate, also can promote the heat transfer efficiency of its sidewall and end face through high heat conduction light-transmissive fluid.The present invention adopts potted component to connect optical element and bearing substrate, so that optical element is fixed on the bearing substrate.In addition, the utilization of the present invention lug boss of pressing close to the sidewall of light-emitting diode chip for backlight unit increases the heat transfer efficiency of the sidewall of light-emitting diode chip for backlight unit.In addition, but bed hedgehopping of the present invention portion bed hedgehopping light-emitting diode chip for backlight unit stopped by potted component with the light of avoiding light-emitting diode chip for backlight unit to be sent, and then promote the light extraction efficiency of package structure for LED.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Those of ordinary skill in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (32)
1. package structure for LED comprises:
Bearing substrate;
At least one light-emitting diode chip for backlight unit is disposed on the said bearing substrate, and has active layer;
Optical element is disposed on the said bearing substrate, form enclosure space between said optical element and the said bearing substrate, and said light-emitting diode chip for backlight unit is arranged in said enclosure space; And
High heat conduction light-transmissive fluid is filled in the said enclosure space,
Wherein with respect to the light of the dominant wavelength that said light-emitting diode chip for backlight unit sent, the light transmittance of said high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of said high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.
2. package structure for LED as claimed in claim 1 also comprises potted component, and said potted component connects said optical element outer rim and said bearing substrate, and is positioned at outside the said enclosure space.
3. package structure for LED as claimed in claim 2 also comprises fixation kit, and said fixation kit is disposed on the said bearing substrate, and is connected between said potted component and the said bearing substrate.
4. package structure for LED as claimed in claim 2 also comprises articulamentum, and articulamentum is between said potted component and said bearing substrate, and the material of said articulamentum is a metal or alloy.
5. package structure for LED as claimed in claim 1; Wherein said high heat conduction light-transmissive fluid is non-conductive liquid, and the said bearing substrate of the direct contact of said high heat conduction light-transmissive fluid, said optical element and said light-emitting diode chip for backlight unit are exposed to all surfaces in the enclosure space.
6. package structure for LED as claimed in claim 1, wherein said high heat conduction light-transmissive fluid contains at least one freeze proof material.
7. package structure for LED as claimed in claim 1, wherein said high heat conduction light-transmissive fluid is doped with a plurality of suspended particles.
8. package structure for LED as claimed in claim 1, the conductive coefficient of wherein said bearing substrate is greater than 25W/mK.
9. package structure for LED as claimed in claim 1; Wherein said optical element is the arc optical element; Said optical element has groove, and said bearing substrate is disposed on the open end of said groove, to seal said groove and to form said enclosure space.
10. package structure for LED as claimed in claim 1 also comprises light conversion layer, and said light conversion layer is positioned at going out on the light path of said light-emitting diode chip for backlight unit.
11. package structure for LED as claimed in claim 1 also comprises isolation layer, many leads and said active layer that it coats a plurality of connection pads of said light-emitting diode chip for backlight unit, electrically connects with a plurality of connection pads of said light-emitting diode chip for backlight unit respectively.
12. package structure for LED as claimed in claim 11, wherein said isolation layer directly pastes to said light-emitting diode chip for backlight unit, and said isolation layer is a light conversion layer.
13. package structure for LED as claimed in claim 12, the material of wherein said high heat conduction light-transmissive fluid comprises electric conducting material.
14. a package structure for LED comprises:
Bearing substrate;
At least one lug boss is disposed on the said bearing substrate, and has opening exposing said bearing substrate, and the material of said lug boss is a Heat Conduction Material;
At least one light-emitting diode chip for backlight unit is disposed on the said bearing substrate and is arranged in said opening, and the width ratio in the width of said opening section and said light-emitting diode chip for backlight unit cross section is 1 to 1.5;
Optical element is disposed on the said bearing substrate, forms enclosure space between said optical element and the said bearing substrate, and said lug boss and said light-emitting diode chip for backlight unit are arranged in said enclosure space; And
High heat conduction light-transmissive fluid is filled in the said enclosure space,
Wherein with respect to the light of the dominant wavelength that said light-emitting diode chip for backlight unit sent, the light transmittance of said high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of said high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.
15. package structure for LED as claimed in claim 14 also comprises potted component, said potted component connects said optical element outer rim and said bearing substrate, and is positioned at outside the said enclosure space.
16. package structure for LED as claimed in claim 15 also comprises fixation kit, said fixation kit is disposed on the said bearing substrate, and is connected between said potted component and the said bearing substrate.
17. package structure for LED as claimed in claim 14; Wherein when the width ratio in the width of said opening section and said light-emitting diode chip for backlight unit cross section be greater than 1 and smaller or equal to 1.5 the time; There is the gap between the sidewall of said light-emitting diode chip for backlight unit and the said lug boss; And said package structure for LED also comprises adhesion coating, said adhesion coating be arranged in the said gap and said light-emitting diode chip for backlight unit and said bearing substrate between.
18. package structure for LED as claimed in claim 14 also comprises the reflector, said reflector be disposed at said opening inwall and said bearing substrate by on the part that said opening exposed.
19. package structure for LED as claimed in claim 14, wherein said Heat Conduction Material are metal, metal alloy or pottery.
20. package structure for LED as claimed in claim 14; Wherein said high heat conduction light-transmissive fluid is non-conductive liquid, and said high heat conduction light-transmissive fluid directly contacts all surfaces in the enclosure space that is exposed to of said bearing substrate, said optical element, said light-emitting diode chip for backlight unit and said lug boss.
21. package structure for LED as claimed in claim 14; Wherein said optical element is the arc optical element; Said optical element has groove, and said bearing substrate is disposed on the open end of said groove, to seal said groove and to form said enclosure space.
22. package structure for LED as claimed in claim 14, the conductive coefficient of wherein said bearing substrate is greater than 25W/mK.
23. a package structure for LED comprises:
Bearing substrate;
At least one bed hedgehopping portion is disposed on the said bearing substrate, has at least one groove and away from first end face of said bearing substrate, and the material of said bed hedgehopping portion is a Heat Conduction Material;
At least one light-emitting diode chip for backlight unit is disposed on said first end face of said bed hedgehopping portion;
Optical element is disposed on the said bearing substrate, forms enclosure space between said optical element and the said bearing substrate, and said bed hedgehopping portion and said light-emitting diode chip for backlight unit are arranged in said enclosure space; And
High heat conduction light-transmissive fluid is filled in the said enclosure space, and is filled in the said groove,
Wherein with respect to the light of the dominant wavelength that said light-emitting diode chip for backlight unit sent, the light transmittance of said high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of said high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.
24. package structure for LED as claimed in claim 23; Also comprise potted component; Said potted component connects said optical element outer rim and said bearing substrate; And be positioned at outside the said enclosure space, said potted component has second end face away from said bearing substrate, and said first end face of said bed hedgehopping portion and the distance between the said bearing substrate are more than or equal to said second end face of said potted component and the distance between the said bearing substrate.
25. package structure for LED as claimed in claim 24 also comprises fixation kit, said fixation kit is disposed on the said bearing substrate, and is connected between said potted component and the said bearing substrate.
26. package structure for LED as claimed in claim 23; Wherein said bed hedgehopping portion comprises bottom and lug boss; Said boss is on said bottom; And said lug boss has opening to expose said bottom, and said light-emitting diode chip for backlight unit is disposed on the said bottom and is arranged in said opening.
27. package structure for LED as claimed in claim 26, the width ratio in the width of wherein said opening section and said light-emitting diode chip for backlight unit cross section is 1 to 1.5.
28. package structure for LED as claimed in claim 27; Wherein when the width ratio in the width of said opening section and said light-emitting diode chip for backlight unit cross section be greater than 1 and smaller or equal to 1.5 the time; There is the gap between the sidewall of said light-emitting diode chip for backlight unit and the said lug boss; And said package structure for LED also comprises adhesion coating, said adhesion coating be arranged in the said gap and the bottom of said light-emitting diode chip for backlight unit and said bed hedgehopping portion between.
29. package structure for LED as claimed in claim 26 also comprises the reflector, said reflector be disposed at said opening inwall and said bottom by on the part that said opening exposed.
30. package structure for LED as claimed in claim 23; Wherein said high heat conduction light-transmissive fluid is non-conductive liquid, and said high heat conduction light-transmissive fluid directly the said bearing substrate of contact, said optical element, said light-emitting diode chip for backlight unit and said bed hedgehopping portion be exposed to all surfaces in the said enclosure space.
31. package structure for LED as claimed in claim 23; Wherein said optical element is the arc optical element; Said optical element has groove, and said bearing substrate is disposed on the open end of said groove, to seal said groove and to form said enclosure space.
32. package structure for LED as claimed in claim 23, the conductive coefficient of wherein said bearing substrate is greater than 25W/mK.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910132740XA CN101866995B (en) | 2009-04-16 | 2009-04-16 | Light-emitting diode packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910132740XA CN101866995B (en) | 2009-04-16 | 2009-04-16 | Light-emitting diode packaging structure |
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| CN101866995A CN101866995A (en) | 2010-10-20 |
| CN101866995B true CN101866995B (en) | 2012-08-08 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103325934A (en) * | 2012-03-19 | 2013-09-25 | 鸿富锦精密工业（深圳）有限公司 | Light-emitting diode packaging structure and manufacture method thereof |
| CN103104847A (en) * | 2013-02-19 | 2013-05-15 | 邹翔 | Light-emitting diode (LED) light source |
| KR102314109B1 (en) | 2015-01-05 | 2021-10-18 | 삼성전자주식회사 | A display apparatus and a display method |
| CN106025041B (en) * | 2016-07-17 | 2018-11-13 | 宁波协源光电科技股份有限公司 | A kind of LED encapsulation structure and forming method thereof |
| CN105932139B (en) * | 2016-07-17 | 2018-06-26 | 鸿宝科技股份有限公司 | A kind of LED encapsulation structure and forming method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1809934A (en) * | 2003-04-30 | 2006-07-26 | 美商克立股份有限公司 | High powered light emitter packages with compact optics |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1809934A (en) * | 2003-04-30 | 2006-07-26 | 美商克立股份有限公司 | High powered light emitter packages with compact optics |
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