CN101866797B - Preparation method of anode screen in field emission display device - Google Patents
Preparation method of anode screen in field emission display device Download PDFInfo
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- CN101866797B CN101866797B CN2010102289910A CN201010228991A CN101866797B CN 101866797 B CN101866797 B CN 101866797B CN 2010102289910 A CN2010102289910 A CN 2010102289910A CN 201010228991 A CN201010228991 A CN 201010228991A CN 101866797 B CN101866797 B CN 101866797B
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- ito glass
- ito
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Abstract
The invention relates to a preparation method of an anode screen in a field emission display device, relating to the field of field emission display devices and solving the problems that interference bright spots are generated due to the low insulativity of a ITO (Indium Tin Oxide) electrode strip local region and unclear ITO strip graphs are caused by little vision contrast of an ITO layer and a substrate glass surface when a field emission anode screen is manufactured in the prior art. The preparation method comprises the following steps: photoetching and corroding the ITO glass by adopting a photoetching method, and deeply corroding the ITO glass by adopting ITO glass deep corrosion solution; and spin coating fluorescent powder on the deeply corroded ITO glass, and preparing the anode screen of the field emission display device through a photoetching method. A preparation method of the ITO glass deep corrosion solution is realized by etching the glass substrate of an ITO strip-type electrode by a mixed solution containing H2O and HF with the proportion of 3:1, wherein the HF water solution has the concentration of 40 percent. The invention is suitable for the process plate photoetching technology for the field emission device.
Description
Technical field
The present invention relates to FED (FED) devices field, particularly relate to the preparation of anode screen in the field emission display.
Background technology
The phosphor screen of FED device (abbreviation anode) is that a kind of glass with ITO (tin indium oxide) conductive layer that has strip is substrate, adds fluorescent material having to be coated with on the ITO bus.Because FED device operating voltage is higher, and device this when work, between each electrode strip any crosstalking can not be arranged, therefore require very high to the interelectrode insulating properties of strip ITO.General photoetching method can not satisfy the requirement of FED device technology.Because utilize common photoetching method, the regional area insulating properties is lower between the ITO strip electrode that obtains, and occurs disturbing bright spot when making the work of FED device, even causes the conducting between strip electrode.
In addition; On the ITO bar, be coated with when adding fluorescent material technology; Also to adopt alternative cover lithography; At this moment owing to utilize the method for common photoetching ITO layer to make ITO and the visual contrast extreme difference between the substrate glass surface on every side, and cause the profile of ITO bar figure unclear, can't realize basically version during alignment.
Summary of the invention
The present invention exists low generation of ITO electrode strip regional area insulating properties to disturb bright spot for solving when existing fabricating yard emission anode shields; And the visual contrast of ITO layer and substrate glass surface is little; Cause the unclear problem of ITO bar figure, the preparation method of anode screen in a kind of field emission display is provided.
The preparation method of anode screen in a kind of field emission display, this method is realized by following steps:
Ito glass spin coating fluorescent material after step 3, the in-depth corrosion that step 2 is obtained is realized the preparation of field emission display anode screen through photoetching method;
The preparation method of the described ito glass in-depth of step 2 corrosive liquid is: get H
2O: HF=3: the glass substrate of 1 mixed liquor etching ITO strip electrode, the concentration of said HF are the aqueous solution of 40% HF;
Beneficial effect of the present invention: the inventive method has increased the resistivity between the ITO electrode strip, the resistance value between ITO conductive electrode bar＞1000M Ω, and improved the insulation property between the electrode, and the ITO material layer on the lesion electrode bar not; The present invention can make that visual contrast obviously increases between ITO laminar surface and the glass surface on every side, the clear-cut of ITO bar, and the present invention aims at for the photoetching registering and lays a good foundation.
Description of drawings
Fig. 1 is the anode screen sketch map that the preparation method of anode screen in a kind of field emission display according to the invention obtains;
Among the figure: 1, ITO electrode, 2, the ito glass substrate.
Embodiment
Embodiment one, combination Fig. 1 explain this execution mode, the preparation method of anode screen in a kind of field emission display; This method is realized by following steps:
Ito glass spin coating fluorescent material after step 3, the in-depth corrosion that step 2 is obtained is realized the preparation of field emission display anode screen through photoetching method;
The preparation method of the described ito glass in-depth of step 2 corrosive liquid is: get H
2O: HF=3: the glass substrate of 1 mixed liquor etching ITO strip electrode 1, the concentration of said HF are the aqueous solution of 40% HF.
In the present embodiment ito glass being deepened corroding method is: will deepen corrosive liquid and put into plastic containers; Ito glass substrate 2 after the step 1 acquisition corrosion is placed on in-depth corrosive liquid plastic containers by certain angle of inclination, will deepens corrosive liquid then and be sprayed at ito glass substrate 2 surfaces uniformly; Etching time adopted the ito glass substrate surface after water purification corrodes in-depth to clean the ito glass after the acquisition in-depth corrosion less than 20 seconds.
The described scavenging period of this execution mode is 1 minute; The corrosion depth on said ito glass substrate 2 surfaces is 3～5 μ m; The corrosion rate of described ito glass substrate 2 is 10 μ m/min.Said ito glass substrate 2 is placed on in-depth corrosive liquid plastic containers by certain angle of inclination, and certain angle of inclination can be 60 °.
The characteristics of the described in-depth corrosive liquid of this execution mode are etching glass substrates, and ITO strip electrode 1 is had no influence.
Manufacturing process technology of the present invention is simple, effect is obvious; Because hydrofluoric acid to the corrosiveness of ito glass, makes the surface of ito glass become uneven, makes through the local printing opacity of hydrofluoric acid corrosion relatively poor from face; To not get well relatively and locate light transmission through hydrofluoric acid corrosion (the ITO bar is arranged); Corrosion place is not the position of ITO strip electrode through hydrofluoric acid, thereby forms big contrast, improves the quality of anode screen in the ballistic device of fabricating yard.
Claims (6)
1. the preparation method of anode screen in the field emission display is characterized in that this method is realized by following steps:
Step 1, adopt photoetching method to carry out photoetching, corrosion ito glass, obtain the ito glass after the corrosion;
Step 2, employing ito glass in-depth corrosive liquid are deepened corrosion to the ito glass that step 1 obtains;
Ito glass spin coating fluorescent material after step 3, the in-depth corrosion that step 2 is obtained is realized the preparation of field emission display anode screen through photoetching method;
The preparation method of the described ito glass in-depth of step 2 corrosive liquid is: get H
2The glass substrate of 0: HF=3: 1 mixed liquor etching ITO strip electrode (1), the concentration of said HF are the aqueous solution of 40% HF.
2. the preparation method of anode screen in a kind of field emission display according to claim 1; It is characterized in that; Ito glass is deepened corroding method is: will deepen corrosive liquid and put into plastic containers; Ito glass substrate (2) after the step 1 acquisition corrosion is placed on in-depth corrosive liquid plastic containers by certain angle of inclination, will deepens corrosive liquid then and be sprayed at ito glass substrate (2) surface uniformly; Etching time adopted the ito glass substrate surface after water purification corrodes in-depth to clean the ito glass after the acquisition in-depth corrosion less than 20 seconds.
3. the preparation method of anode screen is characterized in that said scavenging period is 1 minute in a kind of field emission display according to claim 2.
4. the preparation method of anode screen is characterized in that in a kind of field emission display according to claim 2, and the corrosion depth of said ito glass substrate (2) surface in-depth corrosion is 3～5 μ m.
5. the preparation method of anode screen is characterized in that in a kind of field emission display according to claim 2, and the in-depth corrosion corrosion rate of described ito glass substrate (2) is 10 μ m/min.
6. the preparation method of anode screen is characterized in that in a kind of field emission display according to claim 2, and said ito glass substrate (2) is placed on in-depth corrosive liquid plastic containers by certain angle of inclination, and certain angle of inclination is 60 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102289910A CN101866797B (en) | 2010-07-16 | 2010-07-16 | Preparation method of anode screen in field emission display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102289910A CN101866797B (en) | 2010-07-16 | 2010-07-16 | Preparation method of anode screen in field emission display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101866797A CN101866797A (en) | 2010-10-20 |
| CN101866797B true CN101866797B (en) | 2012-07-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2010102289910A Expired - Fee Related CN101866797B (en) | 2010-07-16 | 2010-07-16 | Preparation method of anode screen in field emission display device |
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| CN (1) | CN101866797B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308036A (en) * | 1987-02-26 | 1988-12-15 | Kanebo Ltd | Plasma-polymerized thin film from quinacridone |
| JP2001188103A (en) * | 1999-01-14 | 2001-07-10 | Sumitomo Chem Co Ltd | Antireflection film |
| CN100419943C (en) * | 2003-04-03 | 2008-09-17 | 清华大学 | Field emission display device |
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2010
- 2010-07-16 CN CN2010102289910A patent/CN101866797B/en not_active Expired - Fee Related
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| CN101866797A (en) | 2010-10-20 |
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