CN101860329A - High-power professional audio power amplifier based on Peltier effect radiation technology - Google Patents
High-power professional audio power amplifier based on Peltier effect radiation technology Download PDFInfo
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- CN101860329A CN101860329A CN 201010209141 CN201010209141A CN101860329A CN 101860329 A CN101860329 A CN 101860329A CN 201010209141 CN201010209141 CN 201010209141 CN 201010209141 A CN201010209141 A CN 201010209141A CN 101860329 A CN101860329 A CN 101860329A
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- radiator
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- power amplifier
- semiconductor chilling
- chilling plate
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Abstract
The invention discloses a high-power professional audio power amplifier based on a Peltier effect radiation technology, comprising a box body, a left power amplification channel and a right power amplification channel. The left power amplification channel and the right power amplification channel are arranged in the box body and respectively provided with at least one power amplification chip, a semiconductor heat radiation sheet and a heat radiator which are fixed together from front to back, the semiconductor heat radiation sheet is provided with a hot end surface and a cold end surface, the hot end surface of the semiconductor heat radiation sheet is pasted on the heat radiator to from hot joint, the back of the power amplification chip is pasted with thermally conductive silicone and pasted on the cold end surface of the semiconductor heat radiation sheet, and outer heat radiation fans capable of taking away heat which is transferred to the heat radiator are respectively arranged in positions corresponding to the left power amplification channel and the right power amplification channel on the rear backboard of the box body. The invention has good heat radiation performance and high efficiency.
Description
[technical field]
The present invention relates to high-power professional audio power amplifier based on Peltier effect radiation technology.
[background technology]
Along with the development of industry technology, there are two trend in the power professional audio amplifier at present: 1, and the power output of power professional audio amplifier is increasing, the audio amplifier configuration that large stadium is thousands of easily; 2, in order to pursue more perfectly tonequality, the margin of power is corresponding increasing.
These two kinds of trend have all proposed stern challenge to the technical specification of existing power tube, and especially the temperature that causes of the ability to bear of power tube and dissipation power raises.Therefore, power professional audio amplifier integral heat sink is extremely meaningful for the solution of the problems referred to above, and cooling can improve every index of power professional audio amplifier to greatest extent, and is especially obvious aspect noise factor and product stability.The structure of use copper or aluminium alloy passive heat radiation seems awkward for the solution of the problems referred to above at present, the structure of the finned heat radiation of pipeline not too is fit to power professional audio amplifier class product, and the microchannel heat radiation makes manufacturing cost higher because of the increase of its technology difficulty again.Therefore the power professional audio amplifier is called new radiating mode.
[summary of the invention]
Technical problem to be solved by this invention is on the basis of aforementioned passive heat radiation, the heat that produces when utilizing the semiconductor temperature difference Refrigeration Technique to adopt the mode of active refrigeration to absorb high power device work, break through high power device and the heat conduction bottleneck that dispels the heat between the matrix, make the high power device heat dispersion better, more steady growth, efficient be higher.
For achieving the above object, the invention provides high-power professional audio power amplifier based on Peltier effect radiation technology, include casing, in casing, be provided with left and right power amplifier passage, power amplification chip, semiconductor chilling plate, the radiator that is fixed together is housed respectively in left and right power amplifier passage from front to back; Described power amplification chip is at least one, described semiconductor chilling plate has a hot junction face and a cold junction face, the hot junction face of semiconductor chilling plate is sticked on radiator and forms thermal bonding, the back side of described power amplification chip is sticked on the cold junction face of semiconductor chilling plate after scribbling heat-conducting silicone grease, respectively is provided with the outer radiator fan that a heat that will reach radiator is taken away on position relative with left and right power amplifier passage on the postnotum of casing.
Another kind of technical scheme of the present invention on the basis of the above, also respectively is provided with the interior radiator fan that can dry at the other end of two radiators in the slit between the fin of radiator, in this radiator fan radiator and outside between the radiator fan.
Compared with prior art, the present invention has following advantage: utilize the described semi-conducting material of Peltier thermoelectric effect principle, when energising, just has refrigerating function, initiatively absorb a large amount of heats that produce when high-power power device is worked rapidly, for providing a heat dissipation channel efficiently between power device and the heat radiation carrier, increased substantially the efficient of heat conducting and radiating mode.And volume is littler, uses more conveniently, has untied the heat radiation bottleneck of high power device comprehensively.Thereby the operating efficiency that makes power device is higher, the life-span is longer.The semiconductor electronic refrigeration can promote refrigerating efficiency by improving the cooling piece electric current at an easy rate, adapts to the growth rate of present power device caloric value fully, also can carry out thermostatic control with simple auxiliary circuit.For the power professional audio amplifier, because the raising of power device efficient will cause under the situation of equal power output, the usage quantity of complete machine power demand device will be than traditional minimizing.
[description of drawings]
Be described in further detail below in conjunction with accompanying drawing and embodiments of the present invention:
Fig. 1 is the vertical view of first kind of structure of the present invention;
Fig. 2 is the vertical view of second kind of structure of the present invention;
Fig. 3 is the structure chart of embodiments of the invention 1;
Fig. 4 is the structure chart of embodiments of the invention 2;
Fig. 5 is the structure chart of embodiments of the invention 3;
Fig. 6 is the structure chart of embodiments of the invention 4;
Fig. 7 is path of thermal resistance figure of the present invention.
[embodiment]
Referring to Fig. 1-8, the present invention is the high-power professional audio power amplifier based on Peltier effect radiation technology, include casing 1, in casing 1, be provided with a left side, right power amplifier passage 2,3, on a left side, right power amplifier passage 2, the power amplification chip 4 that is fixed together is housed respectively in 3, semiconductor chilling plate 5, radiator 6, described radiator 6 includes pedestal 61 and is arranged on multi-disc fin 62 on the pedestal 61, described semiconductor chilling plate 5 has a hot junction face 51 and cold junction face 52, the hot junction face 51 of semiconductor chilling plate 5 is sticked on radiator 6 and forms thermal bonding, and the back side of described power amplification chip 4 is sticked on the cold junction face 52 of semiconductor chilling plate 5 after scribbling heat-conducting silicone grease.The power amplification chip 4 that is fixed together, semiconductor chilling plate 5, radiator 6 are put in the power amplifier passage according to vertical order, be the front shroud 11 of power amplification chip 4 near casing 1, the end of the multi-disc fin 62 of radiator 6 is near the postnotum 12 of casing 1.In casing 1, also be provided with the power module 7 that power supply is provided for power amplification chip 4 and semiconductor chilling plate 5.On postnotum 12, respectively be provided with radiator fan 10 outside on the position relative with left and right power amplifier passage 2,3.The heat that described power amplification chip 4 produces when working is transferred on the radiator 6 by semiconductor chilling plate 5 rapidly, and most of heat is discharged to outside the cabinet 1 by two outer radiator fans 9 on the radiator 6, realizes the effect of heat radiation.
Referring to Fig. 1, described power module 7 is arranged on the middle part of casing 1, and left and right power amplifier passage 2,3 is separately positioned on the both sides of power module 7.
Referring to Fig. 2, described power module 7 is arranged on a side of casing 1, and left and right power amplifier passage 2,3 is adjacent and together be arranged on the opposite side of power module 7.
Among the present invention, semiconductor chilling plate carries out work by paltie effect Peltier Effect, concrete principle: when the electric current contact place that two different conductors form that flows through can produce heat release and heat absorption phenomenon, it is fixed that heat release or heat absorption are come by the size of electric current.
Q＝aTI
In the following formula: Q is heat release or heat absorption power; A is a thermoelectric power; T is the cold junction temperature; I is an operating current.Based on peltier effect theory, the peltier effect refrigeration also is temperature-difference refrigerating.According to the characteristics of Peltier thermoelectric effect technology, adopt the particular semiconductor material thermoelectric pile to freeze, electric energy directly can be converted to heat energy, efficient is higher.The semi-conducting material that refrigerator adopted is main to be bismuth telluride, adds impurity and forms N type or P type semiconductor thermoelement through special processing, and its work characteristics is the simultaneously heating of one side refrigeration.According to quantum theory, metal and semi-conducting material have different energy levels, different contact potential difference and different load bodies.Be connected with metallic plate between P type and the N type semiconductor, the other end is by the metallic plate forming circuit, when closing telegraph key k, just have electric current and pass through PN junction, will form the cold effect of Pa Er card in the upper end that semiconductor links to each other with metallic plate like this, be referred to as cold junction, the lower end forms Pa Er card thermal effect, is referred to as the hot junction.Principle in view of the above, finished product refrigerator adopt the big temperature difference many to galvanic couple as 127 pairs of parallel connections, being welded forms between two ceramic wafers.Use low-voltage DC, its volume is little and refrigerating capacity is higher relatively, and noiseless during work has certain mechanical strength.This project adopts pastes also between mutually with the radiating end of power device and semiconductor chilling plate cold junction and scribbles heat-conducting silicone grease and make its refrigeration.Thermal balance model is as follows:
Refrigerator heat load total amount of heat is Q
Q＝Qe+Qt
Qe is the power device distribute heat in the formula, obviously (Pj is a power device collector junction dissipation power to Qe=0.24Pj, for heat load and extraneous radiation exchange heat, is set to room temperature as heat load, Qt=0 then, therefore Q=Qe=0.24Pj then when system reaches heat balance
Effective refrigerating capacity of refrigerator is Q0, and Q0 is by electric refrigerating capacity Qp, and the hot Qf of transmission that heat Qj that cooling module energising back is produced and element hot junction are delivered to cold junction forms, that is:
Q0＝Qp-Qj-Qf
Refrigeration work consumption is a coefficient of refrigerating performance :=Q0/IU I is the refrigerator operating current, U refrigerator both end voltage.Path of thermal resistance is referring to Fig. 7
According to these several system's parameters, can select the refrigerator specification.Refrigeration device belongs to the low-voltage, high-current device, and the coefficient of variation of power supply should be fit to the Switching Power Supply power supply less than 15%.
Claims (7)
1. based on the high-power professional audio power amplifier of Peltier effect radiation technology, include casing (1), in casing (1), be provided with left and right power amplifier passage (2,3), it is characterized in that, the power amplification chip (4), semiconductor chilling plate (5), the radiator (6) that are fixed together are housed respectively in left and right power amplifier passage (2,3) from front to back; Described power amplification chip (4) is at least one, described semiconductor chilling plate (5) has a hot junction face (51) and a cold junction face (52), the hot junction face (51) of semiconductor chilling plate (5) is sticked and goes up and the formation thermal bonding at radiator (6), the back side of described power amplification chip (4) is sticked on the cold junction face (52) of semiconductor chilling plate (5), goes up at the postnotum (12) of casing (1) and respectively is provided with the outer radiator fan (9) that a heat that will reach radiator is taken away on the position relative with left and right power amplifier passage (2,3).
2. the high-power professional audio power amplifier based on Peltier effect radiation technology according to claim 1, it is characterized in that, on described radiator (1), be provided with groove, described semiconductor chilling plate (5) places in this groove, has been placed with the silica gel (8) of heat-blocking action in the space between groove walls and semiconductor chilling plate (5).
3. the high-power professional audio power amplifier based on Peltier effect radiation technology according to claim 1 and 2, it is characterized in that, the other end at two radiators (6) also respectively is provided with the interior radiator fan (20) that can dry in the slit between the fin of radiator (6), radiator fan (20) is positioned between radiator (6) and the outer radiator fan (9) in this.
4. the high-power professional audio power amplifier based on Peltier effect radiation technology according to claim 1, it is characterized in that, on the sidewall of the pedestal of described radiator (1), be fixed with the semiconductor chilling plate (5) of sheet, and the cold junction face (52) of semiconductor chilling plate (5) is fitted with the power amplification chip, and the hot junction face (51) of semiconductor chilling plate (5) is sticked and goes up and the formation thermal bonding at radiator (6).
5. the high-power professional audio power amplifier based on Peltier effect radiation technology according to claim 4, it is characterized in that, the other end at two radiators (6) also respectively is provided with the interior radiator fan (20) that can dry in the slit between the fin of radiator (6), radiator fan (20) is positioned between radiator (6) and the outer radiator fan (10) in this.
6. the high-power professional audio power amplifier based on Peltier effect radiation technology according to claim 1, it is characterized in that, described power module (7) is arranged on the middle part of casing (1), and left and right power amplifier passage (2,3) is separately positioned on the both sides of power module (7).
7. the high-power professional audio power amplifier based on Peltier effect radiation technology according to claim 1, it is characterized in that, described power module (7) is arranged on a side of casing (1), and left and right power amplifier passage (2,3) is adjacent and together be arranged on the opposite side of power module (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010209141 CN101860329A (en) | 2010-06-19 | 2010-06-19 | High-power professional audio power amplifier based on Peltier effect radiation technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010209141 CN101860329A (en) | 2010-06-19 | 2010-06-19 | High-power professional audio power amplifier based on Peltier effect radiation technology |
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| CN101860329A true CN101860329A (en) | 2010-10-13 |
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| CN 201010209141 Pending CN101860329A (en) | 2010-06-19 | 2010-06-19 | High-power professional audio power amplifier based on Peltier effect radiation technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106415240A (en) * | 2014-02-18 | 2017-02-15 | Avl排放测试***有限责任公司 | Device and method for determining the concentration of at least one gas in a sample gas flow by means of infrared absorption spectroscopy |
| CN107393891A (en) * | 2017-08-17 | 2017-11-24 | 歌尔股份有限公司 | A kind of active heat removal mechanism and Intelligent worn device |
| CN107454799A (en) * | 2017-07-31 | 2017-12-08 | 阳泉煤业（集团）有限责任公司 | Improve the method for power module of converter heat dispersion using semiconductor heat electrical effect |
| CN108601294A (en) * | 2018-04-19 | 2018-09-28 | 四川斐讯信息技术有限公司 | A kind of cooling system and heat dissipating method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04119798A (en) * | 1990-09-10 | 1992-04-21 | Yoshifumi Tomiyoshi | Speaker cooled by peltier element |
| JPH04145710A (en) * | 1990-10-08 | 1992-05-19 | Nec Corp | Power amplifier unit with cooling device |
| CN2133483Y (en) * | 1992-10-16 | 1993-05-19 | 单文栋 | Semiconductor food fresh-keeping box of motor-driven vehicle |
| CN201217415Y (en) * | 2008-04-25 | 2009-04-08 | 海日升电器制品(深圳)有限公司 | Radio set combined machine |
-
2010
- 2010-06-19 CN CN 201010209141 patent/CN101860329A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04119798A (en) * | 1990-09-10 | 1992-04-21 | Yoshifumi Tomiyoshi | Speaker cooled by peltier element |
| JPH04145710A (en) * | 1990-10-08 | 1992-05-19 | Nec Corp | Power amplifier unit with cooling device |
| CN2133483Y (en) * | 1992-10-16 | 1993-05-19 | 单文栋 | Semiconductor food fresh-keeping box of motor-driven vehicle |
| CN201217415Y (en) * | 2008-04-25 | 2009-04-08 | 海日升电器制品(深圳)有限公司 | Radio set combined machine |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106415240A (en) * | 2014-02-18 | 2017-02-15 | Avl排放测试***有限责任公司 | Device and method for determining the concentration of at least one gas in a sample gas flow by means of infrared absorption spectroscopy |
| CN106415240B (en) * | 2014-02-18 | 2020-10-09 | Avl排放测试***有限责任公司 | Device and method for determining the concentration of at least one gas in a sample gas flow by means of infrared absorption spectroscopy |
| CN107454799A (en) * | 2017-07-31 | 2017-12-08 | 阳泉煤业（集团）有限责任公司 | Improve the method for power module of converter heat dispersion using semiconductor heat electrical effect |
| CN107393891A (en) * | 2017-08-17 | 2017-11-24 | 歌尔股份有限公司 | A kind of active heat removal mechanism and Intelligent worn device |
| CN107393891B (en) * | 2017-08-17 | 2023-07-25 | 歌尔科技有限公司 | Initiative cooling mechanism and intelligent wearing equipment |
| CN108601294A (en) * | 2018-04-19 | 2018-09-28 | 四川斐讯信息技术有限公司 | A kind of cooling system and heat dissipating method |
| CN108601294B (en) * | 2018-04-19 | 2020-10-20 | 上海斐讯数据通信技术有限公司 | Heat dissipation system and heat dissipation method |
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Application publication date: 20101013 |