CN101859589B - Minitype flash memory device - Google Patents
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- CN101859589B CN101859589B CN 200910131885 CN200910131885A CN101859589B CN 101859589 B CN101859589 B CN 101859589B CN 200910131885 CN200910131885 CN 200910131885 CN 200910131885 A CN200910131885 A CN 200910131885A CN 101859589 B CN101859589 B CN 101859589B
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Abstract
The invention discloses a minitype flash memory device which comprises a substrate, a control and storage circuit assembly, an earthed conductor, at least one signal wire and a power lead, wherein the control and storage circuit assembly, the earthed conductor, the signal wire and the power lead are arranged on the substrate; and the power lead, the signal wire and the earthed conductor are respectively electrically connected to the control and storage circuit assembly. In addition, the minitype flash memory device also comprises an additional earthed conductor or bump which is electrically connected with the earthed conductor so that when the minitype flash memory device is inserted into a host computer system, the earthed conductor can be electrically connected with the host computer system in advance.
Description
Technical field
The present invention relates to a kind of memory storage, particularly a kind of minitype flash memory device.
Background technology
Digital camera, mobile phone camera and MP3 are very rapid in growth over the years, make the consumer also increase rapidly the storage requirements of digital content.Because flash memory (Flash Memory) has that data are non-volatile, power saving, volume is little and the characteristic of machinery-free structure etc., suitable user carries, as the Storage Media of digital archives transmission and exchange.Portable disk is exactly a kind of with the storage device of nand flash memory as Storage Media.
Current 3C Product on the market is all towards compact exterior design trend development, especially has USB (universal serial bus) (Universal Serial Bus, USB) the Portable personal device of interface is more obvious, and the flash memory take USB interface as transmission interface just derives the demand of slimming design.For example, micro USB Portable disk (Mini USB Flash Drive) is exactly that mode with the circuit board golden finger replaces traditional USB connector combining mechanism iron-clad and is revealed in the outside, in order to reduce the height of integral product, to reach the purpose of slimming.
In general, USB interface comprises power lead (VCC lead), positive signal wire (D+lead), negative signal wire (D-lead) and earth lead (GND lead).Particularly, when through USB interface, the USB Portable disk being connected to main frame, the pin of power lead and earth lead is electrically connected the connectivity port that configures on main frame simultaneously, burns the circuit unit of USB Portable disk with the instantaneous pressure of avoiding being produced when the USB Portable disk being inserted into the connectivity port of main frame.So, the iron-clad that the USB golden finger periphery of tradition USB Portable disk configures is connected to earth lead, so that when the USB Portable disk is inserted main frame, earth lead preferentially is electrically connected to the connectivity port of main frame, with the problem of burning of avoiding above-mentioned instantaneous pressure to be caused.
Yet, because above-mentioned micro USB Portable disk there is no the configuration iron-clad, therefore the micro USB Portable disk may be because of user's incorrect plug, and makes the micro USB Portable disk when being connected moment with main frame, and earth lead is not connected with main frame and causes instantaneous pressure to burn the micro USB Portable disk.
Summary of the invention
The invention provides a kind of minitype flash memory device, it is when plugging in host computer system, and earth lead first is electrically connected with host computer system and the instantaneous pressure that produces is derived, and burns to prevent its inner circuit unit.
The present invention proposes a kind of minitype flash memory device, and it comprises a substrate, a control and storage circuit assembly, a power lead, at least one signal wire, one first earth lead and at least one the second earth lead.Substrate has a front surface, a rear surface and four side surfaces, and controls with the storage circuit arrangement of components on substrate.Power lead, signal wire and earth lead are configured on the front surface of substrate at each interval, and power lead, signal wire and the first earth lead are electrically connected to respectively control and storage circuit assembly.The second earth lead is configured on the front surface of substrate and to be positioned at one side of signal wire and substrate intermarginal, and the other end of the second earth lead extends to the external pins of above-mentioned edge or power lead, and wherein the second earth lead and power lead and signal wire are electrically insulated.
In one embodiment of this invention, above-mentioned power lead and the first earth lead are isometric.
In one embodiment of this invention, above-mentioned power lead, signal wire and the first earth lead have respectively an inner pin and an external pins, and those inner pins are connected to above-mentioned control and storage circuit assembly.
In one embodiment of this invention, the second above-mentioned earth lead and the distance between above-mentioned edge are less than the distance between power lead and above-mentioned edge
In one embodiment of this invention, the bearing of trend of the second above-mentioned earth lead is vertical with the bearing of trend of earth lead.
In one embodiment of this invention, the bearing of trend of the second above-mentioned earth lead is parallel with the bearing of trend of the first earth lead.
In one embodiment of this invention, the distance between the distance between above-mentioned power lead and above-mentioned edge and the first earth lead and above-mentioned edge is less than the distance between the distance between positive signal wire and above-mentioned edge and negative signal wire and above-mentioned edge.
In one embodiment of this invention, above-mentioned minitype flash memory device more comprises a protective seam, and the front surface of covered substrate also exposes external pins and second earth lead of power lead, positive signal wire, negative signal wire, the first earth lead.
In one embodiment of this invention, the material of above-mentioned protective seam is an anti-welding paint.
In one embodiment of this invention, above-mentioned minitype flash memory device more comprises an encapsulated layer, the rear surface of covered substrate and four side surfaces.
In one embodiment of this invention, the material of above-mentioned encapsulated layer is an epoxy resin.
In one embodiment of this invention, above-mentioned signal wire comprises a positive signal wire and a negative signal wire.
The present invention proposes a kind of minitype flash memory device, and it comprises a substrate, a control and storage circuit assembly, a power lead, a positive signal wire, a negative signal wire, an earth lead and a projection.Substrate has a front surface, a rear surface and four side surfaces, and controls with the storage circuit arrangement of components on substrate.Power lead, positive signal wire, negative signal wire and earth lead are configured on the front surface of substrate abreast, wherein power lead, positive signal wire, negative signal wire and earth lead have respectively an inner pin and an external pins, these inner pins are connected to be controlled and the storage circuit assembly, and these external pins are positioned at an edge of substrate.Projection is configured on the front surface of substrate, and external pins and the above-mentioned edge of contiguous power lead.
The present invention proposes a kind of flash memory, and it comprises a substrate, a control and storage circuit assembly, a power lead, at least one signal wire, one first earth lead and at least one the second earth lead.Substrate has a front surface, and controls with the storage circuit arrangement of components on substrate.Power lead, signal wire and the first earth lead are configured on the front surface of substrate at each interval, and power lead, at least one signal wire and the first earth lead are electrically connected to respectively control and storage circuit assembly.The second earth lead be configured on front surface and be positioned at signal wire and the edge of substrate between, wherein the edge is away from controlling and the storage circuit assembly, and the second earth lead has identical current potential with the first earth lead.In addition, the second earth lead and power lead and signal wire are electrically insulated.
The present invention proposes a kind of flash memory, and it comprises a substrate, a control and storage circuit assembly, a power lead, at least one signal wire, one first earth lead, one second earth lead and one the 3rd earth lead.Substrate has a front surface, and controls with the storage circuit arrangement of components on substrate.Power lead, signal wire and the first earth lead are configured on the front surface of substrate at each interval, and power lead, at least one signal wire and the first earth lead are electrically connected to respectively control and storage circuit assembly.The second earth lead and the 3rd earth lead are configured on the front surface of substrate at each interval, and the one side that is positioned at signal wire and substrate is intermarginal, wherein above-mentioned edge is away from controlling and the storage circuit assembly, and the second earth lead, the 3rd earth lead have identical current potential with the first earth lead, and the second earth lead, the 3rd earth lead and power lead and signal wire are electrically insulated.
Based on above-mentioned, the second earth lead that the present invention configures on the substrate of minitype flash memory device can be first and host computer system be electrically connected, and the instantaneous pressure that produces in the plug process is derived, burn with the circuit unit that prevents minitype flash memory device.In addition, the projection that the present invention configures on the substrate of minitype flash memory device can assist the user with correct angle, minitype flash memory device to be inserted into host computer system, guarantee earth lead can be first and host computer system be electrically connected, and the instantaneous pressure that produces in the plug process is derived, burn with the circuit unit that prevents minitype flash memory device.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and coordinate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the stereographic map of the minitype flash memory device that the first exemplary embodiment illustrates according to the present invention.
Fig. 2 is the sectional view that illustrates A-A ' in Fig. 1.
Fig. 3 is the vertical view that illustrates the minitype flash memory device of Fig. 1.
Fig. 4 is the vertical view that another exemplary embodiment illustrates minitype flash memory device according to the present invention.
Fig. 5 is the vertical view that another exemplary embodiment illustrates minitype flash memory device according to the present invention.
Fig. 6 is the vertical view that another exemplary embodiment illustrates minitype flash memory device according to the present invention.
Fig. 7 is the stereographic map that one exemplary embodiment illustrates the mini-flash device of protecting with protective seam and encapsulated layer according to the present invention.
Fig. 8 is the stereographic map of the minitype flash memory device that the second exemplary embodiment illustrates according to the present invention.
Fig. 9 is the vertical view that illustrates the minitype flash memory device of Fig. 8.
Figure 10 is the sectional view that illustrates B-B ' in Fig. 8.
Figure 11 is the stereographic map of the minitype flash memory device that the 3rd exemplary embodiment illustrates according to the present invention.
Figure 12 is the connection diagram of the connectivity port of the 3rd exemplary embodiment illustrates according to the present invention minitype flash memory device and host computer system.
Main description of reference numerals
100: minitype flash memory device
102: substrate
102a: edge
104: control and the storage circuit assembly
106,406: power lead
106a: the inside pin of power lead
106b: the external pins of power lead
108,408: the positive signal wire
108a: the inside pin of positive signal wire
108b: the external pins of positive signal wire
110,410: the negative signal wire
110a: the inside pin of negative signal wire
110b: the external pins of negative signal wire
112,412: the first earth leads
112a: the inside pin of earth lead
112b: the external pins of earth lead
114,114 ', 114 ", 414: the second earth leads
116: protective seam
118: encapsulated layer
152,154,156,158: conductive hole
302: substrate
314: the second earth leads
352,356,360: insulation course
354: the ground connection conductive layer
358: the power supply conductivity layer
372,374,376,378,380: conductive hole
500: minitype flash memory device
502: projection
800: the connectivity port of host computer system
Embodiment
as previously mentioned, existing micro universal serial bus (Universal Serial Bus, USB) Portable disk, be referred to as with the USB Portable disk later, omitted the iron-clad of traditional USB connector, and golden finger is revealed in the outside, can be electrically connected on host computer system with plugging, in one example of the present invention embodiment, memory storage for fear of existing micro USB Portable disk or other interface may be improper because of the mode of inserting main frame, and cause instantaneous pressure to burn the situation of circuit of the memory storage of micro USB Portable disk or other interface, in one example of the present invention embodiment, the power lead of the miniature Portable disk of USB (VCC lead), positive signal wire (D+lead), when the pin (pad) of negative signal wire (D-lead) and earth lead (GND lead) is inserted into the connectivity port of host computer system, the pin of earth lead first is electrically connected to the connectivity port of host computer system.Below will describe the present invention in detail with several exemplary embodiment.It is worth mentioning that, although following exemplary embodiment is sent out with USB interface and illustrated, yet the invention is not restricted to this, the present invention also can be applicable to other data transmission interface, as PCIe (Peripheral Component InterconnectExpress), IEEE 1394 etc.. pin.
Fig. 1 is the stereographic map of the minitype flash memory device that the first exemplary embodiment illustrates according to the present invention, and Fig. 2 is the sectional view that illustrates A-A ' in Fig. 1.
Please refer to Fig. 1 and Fig. 2, minitype flash memory device 100 comprises substrate 102, control and storage circuit assembly 104, the first earth lead 106, positive signal wire 108, negative signal wire 110, power lead 112 and the second earth lead 114.
Controlling with storage circuit assembly 104 is the main circuit of minitype flash memory device 100, and it is disposed on substrate 102.In this exemplary embodiment, control with storage circuit assembly 104 and be configured on rear surface 204, yet it must be appreciated, control with storage circuit assembly 104 also configurablely on front surface 202 in another embodiment of the present invention, perhaps the control of part and storage circuit assembly 104 are configured on front surface 202 and control and storage circuit assembly 104 partly is configured on rear surface 204.
In this exemplary embodiment, control the control circuit that comprises controlling minitype flash memory device 100 operations with storage circuit assembly 104, and this control circuit has at least one temporary storage memory unit (not shown).In another embodiment of the present invention, control more comprises a non-voltile memory in order to storage data with storage circuit assembly 104, as flash memory circuit.
In this exemplary embodiment, above-mentioned non-voltile memory is flash memory circuit, and this flash memory circuit is multilayered memory unit (Multi Level Cell, MLC) nand flash memory circuit.Yet, it must be appreciated, the invention is not restricted to this, in another embodiment of the present invention, above-mentioned non-voltile memory is individual layer storage unit (Single Level Cell, SLC) nand flash memory circuit.
Control circuit comprise microprocessor unit, memory buffer, host interface module, flash interface module, bug check and correction module, power management module etc. with the storage of carrying out data in flash memory circuit, read and erase etc.
It is worth mentioning that, in this exemplary embodiment, minitype flash memory device 100 describes to comprise positive signal wire 108 and the signal wire of negative signal wire 110, yet the invention is not restricted to this, according to different data transmission interface specifications, the configurable one or more signal line of minitype flash memory device 100.
In this exemplary embodiment, the first earth lead 106, positive signal wire 108, negative signal wire 110 have respectively inner pin 106a, 108a, 110a and 112a with power lead 112, control and storage circuit assembly 104 in order to connect.In addition, the first earth lead 106, positive signal wire 108, negative signal wire 110 have respectively external pins 106b, 108b, 110b and 112b with power lead 112, and wherein these external pins 106b, 108b, 110b and 112b are disposed at an edge 102a of adjacent substrates 102.
Fig. 3 is the vertical view that illustrates the minitype flash memory device of Fig. 1.
In the present invention's one exemplary embodiment, the distance between power lead 112 and edge 102a is less than the distance between positive signal wire 108 and edge 102a, and less than the distance between negative signal wire 110 and edge 102a.In addition, the distance between the first earth lead 106 and edge 102a is also less than the distance between positive signal wire 108 and edge 102a, and less than the distance between negative signal wire 110 and edge 102a.Moreover the distance between power lead 112 and edge 102a equals the distance between the first earth lead 106 and edge 102a.
The second earth lead 114 is configured on the front surface 202 of substrate 102.The second earth lead 114 is electrically connected the first earth lead 106, and in order to extend the plain conductor of the first earth lead 106.Specifically, the second earth lead 114 is electrically connected to the external pins 112b of the first earth lead 106, and is electrically insulated with power lead 112, positive signal wire 108 and negative signal wire 110.Detailed says, in this exemplary embodiment, the second earth lead 114 and the first earth lead 106 are directly done electric connection on the front surface 202 of substrate 102.In addition, it is worth mentioning that, the second earth lead 114 is than the external pins 110b of the external pins 108b of positive signal wire 108 and negative signal wire 110 102a that more keeps to the side, so that when the user was inserted into host computer system with minitype flash memory device 100, the connectivity port of the second earth lead 114 elder generations and host computer system was electrically connected.Therefore, when minitype flash memory device 100 met with a high voltage in the plug process, this high voltage can be derived via the first earth lead 106 or the second earth lead 114.And provide a suitable approach allow because of storage device with host computer system because of abnormal large electric current that causes that contacts, the second earth lead 114 or the first earth lead 106 or jointly derived by both thus, and lower the possibility of circuit burnout.
In exemplary embodiment of the present invention, the bearing of trend of the second earth lead 114 is vertical with the bearing of trend of the first earth lead 106.Yet, the invention is not restricted to this, the bearing of trend of the second earth lead 114 also can parallel with the bearing of trend of the first earth lead 106 (as shown in Figure 4) in another embodiment of the present invention.In another embodiment of the present invention, the second earth lead 114 is electrically connected to the first earth lead 106, and extends (as shown in Figure 5) towards edge 102a with rule or irregular mode.
In addition, it must be appreciated, the first earth lead, positive signal wire, negative signal wire, power lead and the second earth lead are not limited to above-mentioned shape.For example, in another exemplary embodiment of the present invention (as shown in Figure 6), the first earth lead 406, positive signal wire 408, negative signal wire 410, power lead 412 and the second earth lead 414 can also irregularly shapedly configure.Except shape was different, its function was same as the first exemplary embodiment, no longer is repeated in this description at this from the second earth lead 414 for the first earth lead 406, positive signal wire 408, negative signal wire 410, power lead 412.
In exemplary embodiment of the present invention, minitype flash memory device 100 also comprises protective seam 116 and encapsulated layer 118, with the circuit unit that is configured on protective substrate 102.Fig. 7 is that one exemplary embodiment illustrates the stereographic map of protecting the mini-flash device with protective seam and encapsulated layer according to the present invention.
Please refer to Fig. 7, protective seam 116 is configured on the front surface 202 of substrate 102, and the front surface 202 of its covered substrate 102 also exposes the first earth lead 106, positive signal wire 108, negative signal wire 110 and power lead 112 and the second earth lead 114.In addition, encapsulated layer 118 is configured on rear surface 204, side surface 206, side surface 208, side surface 210 and the side surface 212 of substrate 102.
In this exemplary embodiment, the material of protective seam 116 is anti-welding paint, and the material of encapsulated layer 118 is epoxy resin.It must be appreciated, the invention is not restricted to this, other protection and encapsulating material such as Tao Ci etc. that are fit to can be applicable to the present invention, and protective seam 116 and encapsulated layer 118 can be used identical or different material.Moreover; the thickness of this protective seam 116 can be equal to or less than these conductor thicknesses; make the surface of these wires 108-114 and this protective seam 116 be positioned at same or different level; and this protective seam 116 can be coated on part the second earth lead 114; make this second earth lead 114 only have the part be revealed in outside; make in appearance, this first earth lead 106 seems independently of one another with this second earth lead 114, is actually but mutually to be electrically connected.
Fig. 8 is the stereographic map of the minitype flash memory device that the second exemplary embodiment illustrates according to the present invention, and Fig. 9 is the vertical view that illustrates the minitype flash memory device of Fig. 8, and Figure 10 is the sectional view that illustrates B-B ' in Fig. 8.
Please refer to Fig. 8, Fig. 9 and Figure 10, minitype flash memory device 300 comprises substrate 302, control and storage circuit assembly 104, the first earth lead 106, positive signal wire 108, negative signal wire 110, power lead 112 and the second earth lead 314.
Control structure with storage circuit assembly 104, the first earth lead 106, positive signal wire 108, negative signal wire 110 and power lead 112 illustrated as before, no longer be repeated in this description at this.
Be similar to the substrate 102 in the first exemplary embodiment, substrate 302 has front surface 202, rear surface 204, side surface 206, side surface 208, side surface 210 and side surface 212.Yet different from the first exemplary embodiment is sequentially to dispose the first insulation course 352, ground connection conductive layer 354, the second insulation course 356, power supply conductivity layer 358 and the 3rd insulation course 360 in substrate 302.
In this exemplary embodiment, the first earth lead 106 is electrically connected to ground connection conductive layer 354 through the first conductive hole 372, and ground connection conductive layer 354 is electrically connected to through the second conductive hole 374 and controls and storage circuit assembly 104, and wherein the first conductive hole 372 is electrically insulated with power supply conductivity layer 358.In addition, power lead 112 is electrically connected to power supply conductivity layer 358 through the 3rd conductive hole 376, and power supply conductivity layer 358 is electrically connected to through the 4th conductive hole 378 and controls and storage circuit assembly 104, and wherein the 4th conductive hole 378 is electrically insulated with ground connection conductive layer 354.
The second earth lead 314 is configured on the front surface 202 of substrate 102.Particularly, the distance between the second earth lead 314 and edge 102a is less than the distance between positive signal wire 108 and edge 102a, and less than the distance between negative signal wire 110 and edge 102a.
The second earth lead 314 is electrically connected through ground connection conductive layer 354 and the first earth lead 106 that configures in substrate 102.Specifically, the second earth lead 314 is electrically connected to ground connection conductive layer 354 through the 5th conductive hole 380, is electrically connected with the first earth lead 106 thus.
It must be appreciated, although in this exemplary embodiment, power supply conductivity layer 358 is configured on ground connection conductive layer 354, yet the invention is not restricted to this, and in another exemplary embodiment of the present invention, ground connection conductive layer 354 is also configurable on power supply conductivity layer 358.Moreover, what deserves to be explained is, Figure 10 is a schematic diagram, and wherein the conductive material in conductive hole 372-380 can only be laid in the hole wall of this conductive hole, or fills up this conductive hole.
Figure 11 is the stereographic map of the minitype flash memory device that the 3rd exemplary embodiment illustrates according to the present invention.
Please refer to Figure 11, minitype flash memory device 500 comprises substrate 102, control and storage circuit assembly 104, the first earth lead 106, positive signal wire 108, negative signal wire 110, power lead 112 and projection 502.
The structure of substrate 102, control and storage circuit assembly 104, the first earth lead 106, positive signal wire 108, negative signal wire 110 and power lead 112 illustrated as before, no longer be repeated in this description at this.
Figure 12 is the connection diagram of the 3rd exemplary embodiment illustrates according to the present invention minitype flash memory device and host computer system connectivity port.
Please refer to Figure 12, when the user was inserted into the connectivity port 800 of host computer system with minitype flash memory device 500, this projection 502 can be brought into play the auxiliary minitype flash memory device 500 of blocking effect and be inserted into the connectivity port 800 of host computer system with correct angle.That is to say, if when the non-correct angle of minitype flash memory device 500 is inserted into Port 800, but the insertion angle of projection 502 correcting minitype flash memory devices 500.Thus, the first earth lead 106 can first be electrically connected the connectivity port 800 of host computer system, and the instantaneous pressure that minitype flash memory device 500 produces in the plug process is derived via the first earth lead 106.
In this exemplary embodiment, projection 502 is a column, and its horizontal section is a square.Yet, the invention is not restricted to this, in another exemplary embodiment of the present invention, the horizontal section of projection 502 can also be circle, polygon or other irregular shape.In addition, the material of projection 502 can be conductive material or insulating material.
Similarly; minitype flash memory device 500 more comprises the first described protective seam 116 of exemplary embodiment and encapsulated layer 118 in the present invention's one exemplary embodiment; with the circuit unit that is configured on protective substrate 102, the front surface 202 of protective seam 116 covered substrates 102 and expose the external pins 106,108,110 and 112 of the first earth lead 106, positive signal wire 108, negative signal wire 110 and power lead 112 wherein.
In sum, the present invention configures the second earth lead on the substrate of minitype flash memory device, wherein when minitype flash memory device according to the present invention was inserted into the connectivity port of host computer system, the connectivity port of this second earth lead elder generation and host computer system was electrically connected.Therefore, when producing instantaneous pressure in minitype flash memory device plug process, this instantaneous pressure can be derived by the second earth lead, and avoids the circuit unit of minitype flash memory device to burn.
In addition, the present invention configures projection on the substrate of minitype flash memory device, can assist thus the user with correct angle, minitype flash memory device to be inserted into the connectivity port of host computer system, so that the ground connection pin is first and the connectivity port of host computer system is electrically connected.Therefore, when producing instantaneous pressure in minitype flash memory device plug process, this instantaneous pressure can be derived through earth lead, and avoids the circuit unit of minitype flash memory device to burn.
It should be noted that at last: above each embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit.Although with reference to above-mentioned each preferred embodiment, the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be modified or be equal to replacement technical scheme of the present invention, and these modifications or replacement do not break away from the spirit and scope of technical solution of the present invention.
Claims (16)
1. minitype flash memory device comprises:
One substrate has a front surface, a rear surface, one first side surface, one second side surface, one the 3rd side surface and one the 4th side surface;
One controls and the storage circuit assembly, is configured on this substrate;
One power lead, at least one signal wire and one first earth lead, be configured at each interval on this front surface of this substrate, and this power lead, this at least one signal wire and this first earth lead are electrically connected to respectively this control and storage circuit assembly, contiguous this first side surface of this power lead, this at least one signal wire and this first earth lead; And
At least one the second earth lead, be configured in this front surface and be positioned at this signal wire and this first side surface between, one end of this second earth lead is electrically connected to this first earth lead, and the other end of this second earth lead extends to this second side surface or this power lead
Wherein this second earth lead and this power lead and this at least one signal wire are electrically insulated,
Wherein this power lead, this at least one signal wire and this first earth lead are in order to be electrically connected to a connectivity port of a host computer system.
2. minitype flash memory device according to claim 1, wherein this power lead and this first earth lead are isometric.
3. minitype flash memory device according to claim 1, wherein this power lead, this at least one signal wire and this first earth lead have respectively an inner pin and an external pins, and those inner pins are connected to this control and storage circuit assembly.
4. minitype flash memory device according to claim 1, wherein the distance between this at least one second earth lead and this first side surface is less than the distance between this power lead and this first side surface.
5. minitype flash memory device according to claim 1, wherein the bearing of trend of this at least one the second earth lead is vertical with the bearing of trend of this first earth lead.
6. minitype flash memory device according to claim 1, wherein the bearing of trend of this at least one the second earth lead is parallel with the bearing of trend of this first earth lead.
7. minitype flash memory device according to claim 1, wherein this at least one signal wire comprises a positive signal wire and a negative signal wire, and wherein the distance between the distance between this power lead and this first side surface and this first earth lead and this first side surface is less than the distance between the distance between this positive signal wire and this first side surface and this negative signal wire and this first side surface.
8. minitype flash memory device according to claim 3, more comprise a protective seam,
Wherein this at least one signal wire comprises a positive signal wire and a negative signal wire, and this protective seam covers this front surface and exposes the external pins and this at least one second earth lead of this power lead, this positive signal wire, this negative signal wire, this first earth lead.
9. minitype flash memory device according to claim 8, wherein the material of this protective seam is an anti-welding paint.
10. minitype flash memory device according to claim 1, more comprise an encapsulated layer, to cover this rear surface, this first side surface, this second side surface, the 3rd side surface and the 4th side surface.
11. minitype flash memory device according to claim 10, wherein the material of this encapsulated layer is an epoxy resin.
12. minitype flash memory device according to claim 1, wherein this at least one signal wire comprises a positive signal wire and a negative signal wire.
13. a flash memory comprises:
One substrate has a front surface;
One controls and the storage circuit assembly, is configured on this substrate;
One power lead, at least one signal wire and one first earth lead, be configured at each interval on this front surface of this substrate, this power lead, this at least one signal wire and this first earth lead are electrically connected to respectively this control and storage circuit assembly, and one first side surface of contiguous this substrate of this power lead, this at least one signal wire and this first earth lead; And
At least one the second earth lead, be configured on this front surface and be positioned at this at least one signal wire and this first side surface between,
Wherein this first side surface is controlled and the storage circuit assembly away from this, and this at least one second earth lead has identical current potential with this first earth lead,
Wherein this at least one the second earth lead and this power lead and this at least one signal wire are electrically insulated,
Wherein this power lead, this at least one signal wire and this first earth lead are in order to be electrically connected to a connectivity port of a host computer system.
14. flash memory according to claim 13, wherein this second earth lead tool one irregular external form.
15. flash memory according to claim 13 has more a protective seam, this protective seam is covered on this second earth lead of part.
16. a flash memory comprises:
One substrate has a front surface;
One controls and the storage circuit assembly, is configured on this substrate;
One power lead, at least one signal wire and one first earth lead, be configured at each interval on this front surface of this substrate, this power lead, this at least one signal wire and this first earth lead are electrically connected to respectively this control and storage circuit assembly, and one first side surface of contiguous this substrate of this power lead, this at least one signal wire and this first earth lead; And
One second earth lead and one the 3rd earth lead are configured on this front surface of this substrate at each interval, and are positioned between this signal wire and this first side surface,
Wherein this first side surface is controlled and the storage circuit assembly away from this, and this second earth lead, the 3rd earth lead have identical current potential with this first earth lead,
Wherein this second earth lead, the 3rd earth lead and this power lead and this at least one signal wire are electrically insulated,
Wherein this power lead, this at least one signal wire and this first earth lead are in order to be electrically connected to a connectivity port of a host computer system.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210364874.6A CN102881325B (en) | 2009-04-08 | 2009-04-08 | Minitype flash memory device |
| CN 200910131885 CN101859589B (en) | 2009-04-08 | 2009-04-08 | Minitype flash memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910131885 CN101859589B (en) | 2009-04-08 | 2009-04-08 | Minitype flash memory device |
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|---|---|---|---|
| CN201210364874.6A Division CN102881325B (en) | 2009-04-08 | 2009-04-08 | Minitype flash memory device |
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| Publication Number | Publication Date |
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| CN101859589A CN101859589A (en) | 2010-10-13 |
| CN101859589B true CN101859589B (en) | 2013-05-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210364874.6A Active CN102881325B (en) | 2009-04-08 | 2009-04-08 | Minitype flash memory device |
| CN 200910131885 Active CN101859589B (en) | 2009-04-08 | 2009-04-08 | Minitype flash memory device |
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| CN201210364874.6A Active CN102881325B (en) | 2009-04-08 | 2009-04-08 | Minitype flash memory device |
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| KR102374066B1 (en) * | 2017-03-20 | 2022-03-14 | 에스케이하이닉스 주식회사 | Semiconductor memory device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1274181A (en) * | 1999-05-10 | 2000-11-22 | 莫列斯公司 | Shielded electrical connector with earthing spring |
| CN1582496A (en) * | 2001-09-05 | 2005-02-16 | 英特尔公司 | Low cost microelectronic circuit package |
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| DE102007013186B4 (en) * | 2007-03-15 | 2020-07-02 | Infineon Technologies Ag | Semiconductor module with semiconductor chips and method for producing the same |
| US7676714B2 (en) * | 2007-03-29 | 2010-03-09 | Sandisk Corporation | Extender strip and test assembly for testing memory card operation |
| CN201064015Y (en) * | 2007-06-28 | 2008-05-21 | 北京华旗资讯数码科技有限公司 | Low-thickness USB memory with protective cover |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1274181A (en) * | 1999-05-10 | 2000-11-22 | 莫列斯公司 | Shielded electrical connector with earthing spring |
| CN1582496A (en) * | 2001-09-05 | 2005-02-16 | 英特尔公司 | Low cost microelectronic circuit package |
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| Publication number | Publication date |
|---|---|
| CN101859589A (en) | 2010-10-13 |
| CN102881325B (en) | 2015-11-18 |
| CN102881325A (en) | 2013-01-16 |
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