CN101847559A - Faraday device for detecting plasma immersion implantation dose - Google Patents
Faraday device for detecting plasma immersion implantation dose Download PDFInfo
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- CN101847559A CN101847559A CN200910080916A CN200910080916A CN101847559A CN 101847559 A CN101847559 A CN 101847559A CN 200910080916 A CN200910080916 A CN 200910080916A CN 200910080916 A CN200910080916 A CN 200910080916A CN 101847559 A CN101847559 A CN 101847559A
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Abstract
The invention discloses a Faraday device for detecting plasma immersion implantation dose, which comprises a Faraday cup for converting collected ion current into electric signals and a protection ring for supporting the Faraday cup. The Faraday cup comprises a cup body and a cup opening, wherein the cup body is of a three-layer structure and is electrically provided with an outer conducting layer, a cup body insulating layer and an inner conducting layer respectively, the outer conducting layer is used for shielding, the cup body insulating layer is used for isolating the inner conducting layer from the outer conducting layer, and the inner conducting layer is used for collecting signals; the cup opening is of a three-layer structure and is electrically provided with an upper conducting layer, a cup opening insulating layer and a lower conducting layer respectively, the upper conducting layer is used for negative bias, the cup opening insulating layer is used for isolating the upper conducting layer from the lower conducting layer, and the inner conducting layer is used for collecting secondary electrons which run from the interior of the Faraday cup to the cup opening. The invention improves the accuracy of Faraday detection result.
Description
Technical field
The present invention relates to the semiconductor doping technical field, relate in particular to a kind of Faraday apparatus that plasma immersion implantation dosage detects that is used for.
Background technology
In semiconductor technology, the doping impurity technology of main flow all adopts ion implantation technique (being also referred to as beamline ion implanters injects), this method is to produce plasma by ion source, by mass spectral analysis required ion component is extracted again, ion is accelerated to certain energy and is injected into (as silicon chip) in the semiconductor chip.This method needs complicated mass spectral analysis and scanning means, and injection efficiency is low, complex structure, and cost is high.
Along with further dwindling of integrated circuit characteristic size, ion implantation energy need further be reduced to a kilo electron volt following (inferior KeV), yet line dispersions can occur after ion beam energy reduces, series of negative effects such as uniformity variation, the further reduction of efficient.Thereby proposed novel plasma immersion injection technique in recent years and avoided above problem.
Plasma immersion injects semiconductor chip is placed on the electrode as negative electrode, and adds back bias voltage on this electrode.The gas that introduce to need in injected system work chamber, and system added power source makes the gas build-up of luminance that is introduced into chamber by charging methods such as inductive coupled, capacitive couplings, forms plasma.Owing on negative electrode, be added with back bias voltage, near substrate, just have back bias voltage sheath layer like this and exist.Under the high voltage of this sheath layer quickened, the cation in the sheath layer can pass the sheath layer and be injected in the substrate.This method has following advantage:
1), need not from ion source, to extract ion, ion carried out mass spectral analysis and linear the acceleration, make the structure of injection device greatly simplify, save great amount of cost;
2), this technology adopts sheath layer acceleration mechanism, injection process is that full wafer injects, and is irrelevant with sizes of substrate, so this technology productive rate is high.
Therefore, the plasma immersion injection is a kind of injection technique of future generation that beamline ion implanters is injected that is hopeful very much to replace.
In the process equipment of any charged particle stream, it all is a very crucial technology that the dosage that injects particle detects, usually all adopt the Faraday cup form of (or being called Faraday cup), rely on its real-time detection, can determine line size, injection length, can control completely technology, guarantee the reliability and stability of equipment operation.
Ion beam line is injected and can be controlled accurately the dosage and the distribution of injecting ion by Faraday cup, yet the Faraday cup that plasma immersion injects need be connected back bias voltage simultaneously with substrate, so the ion dose Detection ﹠ Controling detect the many of complexity than the dosage that ion beam injects.The main the following aspects now of its complicated gonosome:
1), plasma immersion injects the residing circumstance complication of Faraday cup.Faraday's rim of a cup and substrate are in plasma environment together, and simultaneously faraday also is on the negative electricity level in the formed highfield environment of back bias voltage.Such environment seriously influences the Faraday cup testing result.
2), to inject that Faraday cup detects be real-time in situ detection to plasma immersion, Faraday cup will stand long ion bombardment, sputters a large amount of offsprings, these particles influence plasma evenly, the pollution substrate.
Based on above-mentioned, plasma immersion injects the dosage detection needs to adopt the Faraday cup of new structure to realize.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of Faraday cup device that plasma immersion injection technique dosage detects that is used for, with the shielding that realizes disturbing to external world, and make the minimum that influences of the introducing article on plasma body of Faraday cup and substrate, thereby improve the accuracy of faraday's testing result.
(2) technical scheme
For achieving the above object; the invention provides a kind of Faraday apparatus that plasma immersion implantation dosage detects that is used for, this device comprises that an ion flow that is used for collecting changes into the guard ring 33 that the Faraday cup 40 of the signal of telecommunication and provide support for this Faraday cup installation.
In the such scheme, described Faraday cup 40 is made of cup body and rim of a cup, the cup body has three-decker, be respectively outer conducting layer 44, cup body insulating barrier 43 and inner conducting layer 42 electrically, outer conducting layer 44 is used for shielding, cup body insulating barrier 43 is used to isolate inner conducting layer and outer conducting layer, and inner conducting layer 42 is used to collect signal; Rim of a cup has three-decker, be respectively to go up conductive layer 80a, rim of a cup insulating barrier 80b and lower conductiving layer 80c electrically, last conductive layer 80a is used to connect back bias voltage, rim of a cup insulating barrier 80b is used to isolate conductive layer and lower conductiving layer, and lower conductiving layer 80c is used to collect the secondary electron of going to rim of a cup from Faraday cup 40 inside.
In the such scheme, the material of described inner conducting layer 42 is aluminium, stainless steel, graphite, or the combination in any of aluminium, stainless steel and graphite; The material of described outer conducting layer 44 is aluminium, stainless steel, or aluminium and stainless combination in any; The material of described cup body insulating barrier 43 is polytetrafluoroethylene, quartz or ceramic.
In the such scheme, the three-decker that described rim of a cup has is three discrete bulks, or a slice is coated with the bulk of conductive layer respectively on the insulating barrier two sides.
In the such scheme, the described material of going up conductive layer 80a is carborundum or graphite; The material of described rim of a cup insulating barrier 80b is aluminium, stainless steel, or aluminium and stainless combination in any; The material of described lower conductiving layer 80c is carborundum or graphite.
In the such scheme, described rim of a cup further has a plurality of through holes, is used to make ion can enter Faraday cup.Described through hole is circular hole or slit, and arranging of through hole is that rule is evenly arranged or irregular unordered arranging.
In the such scheme, described guard ring 33 is a ring-type, has the hole identical shaped with the rim of a cup of Faraday cup on it.The material of described guard ring 33 is aluminium, stainless steel, or aluminium and stainless combination in any.
(3) beneficial effect
The present invention has following advantage:
1, Faraday cup to external world electromagnetic field taked shielding, can effectively reduce the influence of external environment to the Faraday cup testing result.
2, the same bias voltage of the rim of a cup of Faraday cup and pedestal, the plasmoid on Faraday cup top is more near the plasmoid on pedestal top, thereby the testing result of Faraday cup is more near legitimate reading, and the uniformity of the introducing article on plasma body of Faraday cup influence simultaneously is minimum.
3, Faraday apparatus is simple in structure, does not introduce extra electromagnetic field improving on the accuracy of detection, and this just provides convenience for the realization of Faraday apparatus, Faraday cup is easy to install and changes.
Description of drawings
Fig. 1 is the schematic diagram of plasma immersion injected system;
Fig. 2 is the schematic diagram that is used for the Faraday apparatus of plasma immersion implantation dosage detection provided by the invention;
Fig. 3 is the profile of Faraday cup device provided by the invention;
Fig. 4 is the rim of a cup profile of Faraday cup provided by the invention;
Fig. 5 is the rim of a cup top view of Faraday cup provided by the invention;
Fig. 6 is the top view of guard ring provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Now in conjunction with the accompanying drawings an embodiment is described, so that the present invention is had detailed understanding, but not as a limitation of the invention, the size in the accompanying drawing is not as the concrete size of implementing simultaneously.Yet, reconfigure or nonessential change all is considered as the protection range of claims of the present invention any conspicuous modification of the present invention.The label of schematic diagram has consistency, to the same label of identical structure.
Fig. 1 is the schematic diagram of plasma immersion injected system provided by the invention.The 12nd, plasma immersion injects work chamber, and the pedestal 32 that is positioned at chamber is used to semiconductor chip 31 (as silicon chip) to provide support.Back bias voltage power supply 70 is added on the bottom electrode 50, and electrically, bottom electrode 50 links to each other with pedestal 32, thereby bias voltage is provided can for substrate 31.Bottom electrode 50 can move up and down the height of adjusting pedestal and substrate so that make technology reach optimum state.
When system works, add radio frequency power source for coil 11, by inductive coupled mode power is coupled to the working gas that feeds in the chamber 12, working gas just can build-up of luminance and form plasma 20 in chamber.Plasma forms the sheath layer near substrate 31, the cation in the sheath layer passes the sheath layer and injects substrate 31 under the acceleration of back bias voltage.Be to provide the guard ring 33 that supports to Faraday cup 40 is installed on pedestal 31 limits.The sectional arrangement drawing of Faraday cup such as Fig. 3, the top view of guard ring 33 such as Fig. 6.When the cation in the plasma 20 sheath layers injects substrate 31, also can enter in the Faraday cup 40 of hollow by the through hole on the guard ring 33 35 (shown in Fig. 6).After cation enters Faraday cup 40, be converted to the signal of telecommunication and give subsequent treatment module 60 and handle, for technical process provides control signal.
As shown in Figure 2; Fig. 2 is the schematic diagram that is used for the Faraday apparatus that plasma immersion implantation dosage detects provided by the invention, and this device comprises that an ion flow that is used for collecting changes into the guard ring 33 that the Faraday cup 40 of the signal of telecommunication and provide support for this Faraday cup installation.
Faraday cup 40 is made of cup body and rim of a cup, the cup body has three-decker, is respectively outer conducting layer 44, cup body insulating barrier 43 and inner conducting layer 42 electrically, and outer conducting layer 44 is used for shielding, cup body insulating barrier 43 is used to isolate inner conducting layer and outer conducting layer, and inner conducting layer 42 is used to collect signal; Rim of a cup has three-decker, be respectively to go up conductive layer 80a, rim of a cup insulating barrier 80b and lower conductiving layer 80c electrically, last conductive layer 80a is used to connect back bias voltage, rim of a cup insulating barrier 80b is used to isolate conductive layer and lower conductiving layer, and inner conducting layer 80c is used to collect the secondary electron of going to rim of a cup from Faraday cup 40 inside.
The material of inner conducting layer 42 is aluminium, stainless steel, graphite, or the combination in any of aluminium, stainless steel and graphite.The material of outer conducting layer 44 is aluminium, stainless steel, or aluminium and stainless combination in any.The material of cup body insulating barrier 43 is polytetrafluoroethylene, quartz or ceramic.
The three-decker that rim of a cup has is three discrete bulks, or a slice is coated with the bulk of conductive layer respectively on the insulating barrier two sides.The material of last conductive layer 80a is carborundum or graphite; The material of rim of a cup insulating barrier 80b is aluminium, stainless steel, or aluminium and stainless combination in any; The material of lower conductiving layer 80c is carborundum or graphite.Rim of a cup further has a plurality of through holes, is used to make ion can enter Faraday cup.Through hole is circular hole or slit, and arranging of through hole is that rule is evenly arranged or irregular unordered arranging.
As shown in Figure 6, Fig. 6 installs the guard ring 33 that supports for Faraday cup 40 provides.Guard ring 33 be arranged in Fig. 1 pedestal 32 around, and the anchor ring of guard ring 33 flushes with substrate 31 faces.The material of guard ring 33 is combinations of aluminium, stainless steel or above-mentioned material.
Plasma is even in order to make, minimum is reduced in the article on plasma body influence of packing into of Faraday cup 40 and the detected dosage of faraday can be represented the ionic weight that injects substrate 31 more accurately; guard ring 33 can connect negative high bias voltage; bias value and frequency can with substrate 31 on identical, also can be different.
Because guard ring 33 can be exposed under the bombardment of plasma always; for reducing sputter that guard ring 33 causes because of the bombardment pollution to technology, guard ring 33 surfaces can be plated the material of the low sputtering raste of one deck or technology is polluted little material such as carborundum (SiC).
The 35th, Faraday cup 40 through holes, through hole 35 also can be square or other geometry, and this can determine according to the rim of a cup shape of Faraday cup 40.Faraday's rim of a cup in the present embodiment is circular.Through hole 35 on the guard ring 33 not necessarily only is four, also can two or more, correspondingly also just have two or more Faraday cups 40.Faraday cup 40 numbers in the present embodiment are four, more Faraday cup 40 numbers can make testing result more accurate by getting the average method of each faraday's testing result, and equally distributed a plurality of Faraday cups can be used for the uniformity of monitoring of plasma simultaneously.
The vertical section of Faraday cup 40 as shown in Figure 3.Faraday cup is the cylindrical cup-shaped structure in the present embodiment, and actual faraday can be other shape.The 42nd, the conductive inner wall of Faraday cup, its material is aluminium or stainless steel, conductive inner wall is the cylinder of a hollow in the present embodiment.Produce the result that a large amount of secondary electrons influences detection for reducing the ion bombardment inwall, can on inwall 42, plate the material such as the graphite of the low secondary rate of one deck, 41 representatives is exactly this layer material among the figure, equally also a kind of material of 41 and 42 usefulness can be replaced, as long as achieve the above object.The 43rd, insulating barrier, in the present embodiment being one uncoveredly has the cylindrical of the end, and material can be polytetrafluoroethylene, quartz, pottery.The 44th, to make by the material of conduction, its shape is the same with 43.45 is the bulk such as the graphite of a low secondary rate, is the graphite disk in the present embodiment, electrically goes up to link to each other with cup inwall 41.Wherein signal can be drawn also and can draw the position easily from other at the bottom of cup, does not mark concrete position among the figure.
Faraday's wall of cup also may be more multi-layered, but sees it is the three-decker of conduction insulation conduction on electrical from inside to outside.Wherein the conductive layer of internal layer is used in order to collect signal, and insulating barrier two-layerly separates electrically with inside and outside, and skin is used for shielding.Every layer of concrete structure can change again, and as can adding cooling device such as circulating water cooling device or circulation helium cooling device in internal layer or outer field conductive layer, but this electrically three-decker of integral body is constant.
The 80th, the rim of a cup of Faraday cup 40 or cry bowl cover, cup top, the vertical face figure of rim of a cup 80 as shown in Figure 4, the top view of rim of a cup 80 is as shown in Figure 5.81 is through holes that ion enters Faraday cup among Fig. 4, is identical with 81 among Fig. 5.The effect of through hole 81 is to reduce glass probability of interior secondary electron effusion Faraday cup to make detection more accurate.The number of the through hole 81 among Fig. 5 schematically, not merely is 5 just, can be a lot; The arrangement mode of through hole becomes row, can be uniformly, can be symmetrical, also can be unordered; The shape of through hole also not only is exactly a circular hole, also can be that the arrangement of slit and slit can in order also can be unordered.
80a is low sputtering raste layer among Fig. 4, and the structure of this one deck is surperficial similar to effect and guard ring 33; 80b is that insulating barrier 80c is a conductive layer, links to each other with cup inwall 42 among Fig. 3 electrically.The three-decker of above-mentioned Faraday cup rim of a cup can be discrete three layers, also can be one as realizing by plate two kinds of electric conducting materials respectively on the layer of material two sides.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. one kind is used for the Faraday apparatus that plasma immersion implantation dosage detects; it is characterized in that this device comprises that an ion flow that is used for collecting changes into the Faraday cup of the signal of telecommunication (40) and one guard ring (33) that provides support is installed for this Faraday cup.
2. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 1 is characterized in that described Faraday cup (40) is made of cup body and rim of a cup,
The cup body has three-decker, be respectively outer conducting layer (44), cup body insulating barrier (43) and inner conducting layer (42) electrically, outer conducting layer (44) is used for shielding, and cup body insulating barrier (43) is used to isolate inner conducting layer and outer conducting layer, and inner conducting layer (42) is used to collect signal;
Rim of a cup has three-decker, be respectively to go up conductive layer (80a), rim of a cup insulating barrier (80b) and lower conductiving layer (80c) electrically, last conductive layer (80a) is used to connect back bias voltage, rim of a cup insulating barrier (80b) is used to isolate conductive layer and lower conductiving layer, and inner conducting layer (80c) is used for collecting the secondary electron of going to rim of a cup from Faraday cup (40) inside.
3. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 2 is characterized in that,
The material of described inner conducting layer (42) is aluminium, stainless steel, graphite, or the combination in any of aluminium, stainless steel and graphite;
The material of described outer conducting layer (44) is aluminium, stainless steel, or aluminium and stainless combination in any;
The material of described cup body insulating barrier (43) is polytetrafluoroethylene, quartz or ceramic.
4. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 2 is characterized in that the three-decker that described rim of a cup has is three discrete bulks, or a slice is coated with the bulk of conductive layer respectively on the insulating barrier two sides.
5. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 2 is characterized in that,
The described material of going up conductive layer (80a) is carborundum or graphite;
The material of described rim of a cup insulating barrier (80b) is aluminium, stainless steel, or aluminium and stainless combination in any;
The material of described lower conductiving layer (80c) is carborundum or graphite.
6. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 2 is characterized in that described rim of a cup further has a plurality of through holes, is used to make ion can enter Faraday cup.
7. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 6 is characterized in that described through hole is circular hole or slit, and arranging of through hole is that rule is evenly arranged or irregular unordered arranging.
8. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 1 is characterized in that described guard ring (33) is a ring-type, has the hole identical shaped with the rim of a cup of Faraday cup on it.
9. the Faraday apparatus that is used for the plasma immersion implantation dosage detection according to claim 8 is characterized in that the material of described guard ring (33) is aluminium, stainless steel, or aluminium and stainless combination in any.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100809161A CN101847559B (en) | 2009-03-25 | 2009-03-25 | Faraday device for detecting plasma immersion implantation dose |
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| CN2009100809161A CN101847559B (en) | 2009-03-25 | 2009-03-25 | Faraday device for detecting plasma immersion implantation dose |
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| CN101847559A true CN101847559A (en) | 2010-09-29 |
| CN101847559B CN101847559B (en) | 2012-07-04 |
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| CN102610478A (en) * | 2012-02-29 | 2012-07-25 | 中国工程物理研究院电子工程研究所 | Charged particle beam measurement device |
| CN103165386A (en) * | 2011-12-19 | 2013-06-19 | 中国科学院大连化学物理研究所 | Ion receiving device for ion mobility spectrometry (IMS) |
| CN104576271A (en) * | 2013-10-18 | 2015-04-29 | 和舰科技(苏州)有限公司 | Ion measuring device and graphite layer thereof |
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| CN103165386A (en) * | 2011-12-19 | 2013-06-19 | 中国科学院大连化学物理研究所 | Ion receiving device for ion mobility spectrometry (IMS) |
| CN102610478B (en) * | 2012-02-29 | 2014-07-30 | 中国工程物理研究院电子工程研究所 | Charged particle beam measurement device |
| CN102610478A (en) * | 2012-02-29 | 2012-07-25 | 中国工程物理研究院电子工程研究所 | Charged particle beam measurement device |
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| CN110828272A (en) * | 2018-08-09 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Chamber liner, lower electrode device and semiconductor processing equipment |
| CN110828272B (en) * | 2018-08-09 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Chamber liner, lower electrode device and semiconductor processing equipment |
| CN109887858A (en) * | 2019-03-13 | 2019-06-14 | 德淮半导体有限公司 | The measuring device and its measurement method of ion implantation dosage |
| CN111063600A (en) * | 2019-12-26 | 2020-04-24 | 华虹半导体(无锡)有限公司 | Device for monitoring ion implantation dosage in real time and using method |
| WO2022089475A1 (en) * | 2020-11-02 | 2022-05-05 | 北京北方华创微电子装备有限公司 | Semiconductor manufacturing device and faraday cup thereof |
| WO2023172379A1 (en) * | 2022-03-05 | 2023-09-14 | Applied Materials, Inc. | Cover ring to mitigate carbon contamination in plasma doping chamber |
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