CN101842313A - Micromechanical system - Google Patents
Micromechanical system Download PDFInfo
- Publication number
- CN101842313A CN101842313A CN200880113985A CN200880113985A CN101842313A CN 101842313 A CN101842313 A CN 101842313A CN 200880113985 A CN200880113985 A CN 200880113985A CN 200880113985 A CN200880113985 A CN 200880113985A CN 101842313 A CN101842313 A CN 101842313A
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- China
- Prior art keywords
- micro mechanical
- substrate
- mechanical system
- suspension arrangement
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000725 suspension Substances 0.000 claims abstract description 41
- 239000010410 layer Substances 0.000 claims description 31
- 239000002346 layers by function Substances 0.000 claims description 28
- 238000013016 damping Methods 0.000 claims description 22
- 230000033001 locomotion Effects 0.000 claims description 14
- 230000001133 acceleration Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000299354 Acalles micros Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0012—Protection against reverse engineering, unauthorised use, use in unintended manner, wrong insertion or pin assignment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
Abstract
The invention relates to a micromechanical system (1) which comprises a substrate (100), a suspension (130), a base (140) and a micromechanical sensor (150), the suspension (130) movably carrying the base (140) above the substrate (100) and the micromechanical sensor (150) being located on the base (140).
Description
Technical field
The present invention relates to a kind of micro mechanical system.
Background technology
Micro mechanical system, for example the transducer of micromechanics, inertial sensor, acceleration transducer, low g acceleration transducer, speed probe are widely used now with relevant parts.Therefore these systems vibration of for example being used for starting the air bag of vehicle (KFZ) or also being used for detection computations machine hard disk.At this, micro mechanical sensor generally includes the movable mass of micromechanics ground structure, and the motion that causes owing to acceleration, vibration or motion of described mass is detected.Especially can measure the electric capacity between mass and the reference electrode in addition constantly, because this electric capacity and mass are to the distance dependent of reference electrode.
In addition, micro mechanical system owing to its widely range of application make excessive demands partly demanding environment for use.Environment for use comprises temperature fluctuation, vibration, mechanical stress and impact.These influences may act on the micro mechanical sensor unfriendly, and reduce its reliability and/or service life.In addition, this class is inevitable in many application with the motion influence that it doesn't matter (for example vibration in the vehicle) that in fact will detect.
In order to protect micro mechanical system to avoid this class adverse influence and, can to take certain measure in order to keep the reliability of system.At this, this class scheme comprises the specialized designs of sensor, the special configuration of system's housing, even also comprises the measure in the module and/or in the control device.Generally speaking, these measures have increased production, installation and/or operating the expending of micro mechanical system.This also may cause cost to increase in unfavorable mode.
Summary of the invention
Therefore, task of the present invention provides a kind of through improved micro mechanical system, this micro mechanical system on the one hand for the influence that plays interference effect, especially be insensitive as far as possible for mechanical stress and vibration, and cost is advantageously manufactured as far as possible on the other hand.In addition, this class micro mechanical system particularly can provide on chip plane or wafer plane.
This task solves by the micro mechanical system according to claim 1.Other favourable structure of the present invention illustrates in the dependent claims.
According to one aspect of the present invention, designed a kind of micro mechanical system, this micro mechanical system comprises substrate, suspension arrangement, substrate and micro mechanical sensor, wherein, this suspension arrangement is bearing in the substrate top movingly with substrate, and wherein, this micro mechanical sensor is set in this substrate.Micro mechanical system according to the present invention has the following advantages: actual micro mechanical sensor can by suspension arrangement and substrate or with the mechanically decoupling zero of other parts of micro mechanical system.Then, the mechanical property of this suspension arrangement can determine: which kind of motion of this substrate is passed on the micro mechanical sensor and which kind of motion is opened or can only be delivered on the micro mechanical sensor with being weakened by obstruct.Therefore, for example this suspension arrangement can be understood that mechanical filter, the vibration in the special frequency band that for example decays of this mechanical filter.In addition, also can make the mechanically deform that for example causes of substrate be kept away from micro mechanical sensor by suspension arrangement by temperature.
According to one embodiment of the present invention, this micro mechanical sensor comprises the acceleration transducer of micromechanics, and wherein, the acceleration transducer of this micromechanics can comprise movable mass and can be changes in capacitance with the conversion of motion of mass.
According to another embodiment of the invention, first exhaustion layer is arranged on the substrate, first functional layer is arranged on first exhaustion layer, second exhaustion layer is arranged on first functional layer and second functional layer is arranged on second exhaustion layer, comprise substrate in this first functional layer, and second functional layer comprises micro mechanical sensor.In addition, these exhaustion layers can have silica, and these functional layers can have silicon.In addition, the wiring layer that for example is made of polysilicon can be arranged between first functional layer and second exhaustion layer and be used for electrically contacting of micro mechanical sensor.Therefore, cost is advantageously manufactured as far as possible can to utilize the manufacture process of standard and/or raw material according to micro mechanical system of the present invention.
According to another embodiment of the invention, this suspension arrangement comprises spring unit and support base flexibly.Therefore, stress other parts of substrate or micro mechanical system and/or outer member and/or distortion are held away from micro mechanical sensor.At this, other can comprise housing, filler, fixture and/or printed circuit with component external.
According to another embodiment of the invention, this suspension arrangement comprises damping unit, wherein, and the motion of this suspension arrangement damping substrate.Damping unit can be additional to spring element ground and be provided with.At this, this damping unit can comprise first group of finger and second group of finger, wherein first group of finger is provided with regularly with respect to substrate position, and second group of finger is connected with substrate, and wherein first group of finger can be interlaced with second group of finger, first group of finger can be connected with first current potential in addition, and second group of finger can be connected with second current potential, so that the motion of damping substrate effectively.
Therefore can regulate the mechanical performance, particularly its oscillating characteristic of suspension arrangement with effective and efficient manner targetedly, so that for example make the vibration in certain frequency band be kept away from micro mechanical sensor.Variation by current potential can make performance dynamically adapt to different service conditions in addition.
Description of drawings
Describe preferred implementation of the present invention below with reference to the accompanying drawings in detail.Figure 1A and 1B illustrate the schematic lateral view according to the micro mechanical system of first and second embodiments of the present invention, and Fig. 2 A, 2B and 2C illustrate the schematic plan according to the micro mechanical system of the 3rd, the 4th and the 5th embodiment of the present invention.
The specific embodiment
Figure 1A is at the micro mechanical system along first embodiment of the invention shown in the schematic side elevation of cross section.First micro mechanical system 1 is manufactured on the substrate 100 at this with being the stratiform storehouse.This stratiform storehouse comprises first exhaustion layer 111, first functional layer 121, second exhaustion layer 112 and second functional layer 122.This substrate 100 can comprise semiconductor substrate, silicon substrate for example, and wherein, first and second exhaustion layers 111,112 can comprise conductor oxidate, silica for example, and wherein the first and second merit functional layers 121,122 can comprise semiconductor, for example silicon.In addition, the semiconductor of the first and second merit functional layers 121,122 can comprise silicon, polysilicon, non-crystalline silicon and/or epitaxially grown polysilicon (EPI).This class micro mechanical system, for example first micro mechanical system 1 can be made by known exhaustion layer technology itself.According to this embodiment of the present invention, process substrate 140 from first functional layer 121.At this, this substrate 140 is bearing in substrate 100 tops movingly by suspension arrangement 130.This suspension arrangement 130 can comprise unit flexible and/or damping, and these unit illustrate by the spring 134 of signal and the damping unit 135 of signal at this.Therefore, the mechanical stress, vibration or other the interference effect that are subjected to of the other parts of substrate 100 and/or micro mechanical system 1 can be in an advantageous manner by suspension arrangement 130 and substrate 140 decoupling zeros.The mechanical property of this suspension arrangement 130, for example damping capacity and/or distinctive mechanical intrinsic vibration can be provided with in this wise, make this substrate 140 and interference effect decoupling zero possible or expection.Therefore, when the design suspension arrangement, allow to consider for example often vibration of appearance in vehicle, because this class vibration can be described by limited frequency band usually.
This substrate 140 is also used as the carrier of micro mechanical sensor 150, and this micro mechanical sensor is fixed in the substrate 140 movingly by other suspension arrangement 131.The double oscillator of two mass 1501 forms that are micro mechanical sensor 150 is shown here, also can represents common micro mechanical system and/or sensor here.Therefore, this micro mechanical sensor 150 for example can comprise film oscillator, trampoline oscillator, equiarm beam oscillator, beam resonator or relevant mechanical system.Advantageously, the mechanical property of suspension arrangement 130 adapts to the mechanical property of other suspension arrangement 131 and micro mechanical sensor 150 in this wise, make that undesirable substrate 100 motions are stopped out from micro mechanical sensor 150, and substrate 100 motions of wishing are not sent on the micro mechanical sensor 150 with not being subjected to damping basically.
Figure 1B is along second embodiment of the invention micro mechanical system shown in the schematic side elevation of cross section.According to this embodiment, second micro mechanical system 2 comprises the stratiform storehouse, and this stratiform storehouse is made up of first exhaustion layer 111, first functional layer 121, second exhaustion layer 112 and second functional layer 122 on the substrate 100.Substrate 140 is arranged on substrate 100 tops movingly by suspension arrangement 130.Micro mechanical sensor 150 is also supported in this substrate 140, and this micro mechanical sensor is suspended in the substrate 140 movingly by other suspension arrangement 131.
According to this embodiment of the present invention, this micro mechanical system 2 has the wiring layer 160 between first functional layer 121 and second exhaustion layer 112.This wiring layer 160 can be arranged in the zone of suspension arrangement 130, becomes the part of suspension arrangement 130 or with advantageous manner the mechanical property of suspension arrangement 130 is remained unchanged by enough thin structure basically.This wiring layer 160 can be realized the electric contact connection of micro mechanical sensor 150 in substrate 140 with advantageous manner.For this reason, this micro mechanical system 2 can comprise other mechanical organ and/or electronic component in addition, and these elements are sent to the signal of telecommunication on the micro mechanical sensor 150 or from micro mechanical sensor 150 and receive the signal of telecommunication.This wiring layer 160 can comprise conductive material with advantageous manner.For example comprise metal, aluminium, copper, gold, semiconductor doping and/or non-doping, silicon, polysilicon and non-crystalline silicon for this reason.
Fig. 2 A shown in the schematic plan according to the micro mechanical system of the 3rd embodiment of the present invention.According to this embodiment, the suspension arrangement 1301 of the 3rd micro mechanical system 3 comprises spring element 136, and this spring element 136 is bearing in substrate 100 tops movingly with substrate 140.For this reason, at least correspondingly be configured in second functional layer 122 that is positioned at the top in the view of Fig. 2 A.Micro mechanical sensor 151 is being set, for example micro mechanical sensor 150 or the micro mechanical sensor of describing with Figure 1A, 1B or 2C 152 in the substrate 140 or in substrate 140 with interrelating.
This spring element 136 can with the mechanical stress of the balanced substrate 100 of advantageous manner and make these stress basically with substrate 140 decoupling zeros.Therefore for example the other parts of substrate 100 and/or micro mechanical system 3 can be out of shape in the plane, yet this distortion only is sent in the substrate 140 with inapparent amplitude.This class variation causes that as the change of running temperature that can be by micro mechanical system 3 because for example this micro mechanical system 3 is fixedlyed connected with an other circuit, and this micro mechanical system 3 is moved under second temperature under first temperature.Here the temperature difference between first temperature and second temperature may usually above 50 ℃, be higher than 100 ℃ or be higher than 200 ℃.
Fig. 2 B shown in the schematic plan according to the micro mechanical system of the 4th embodiment of the present invention.According to this embodiment, the substrate 140 of the 4th micro mechanical system 4 is suspended on substrate 100 tops movingly by suspension arrangement 1302.Comprise spring element 138 at this this suspension arrangement 1302, for example the spring element of describing with Fig. 2 A 136 with interrelating.According to this embodiment, this suspension arrangement 1302 additionally comprises damping unit 137, and this damping unit damping substrate 140 is with respect to the motion of substrate 100.This damping unit 137 can also comprise first group of first finger 1371 and second group of second finger 1372.At this, first finger 1371 for example is connected with substrate 100 fixed-site by first exhaustion layer, first functional layer, second exhaustion layer and/or second functional layer, and second finger 1372 is fixedlyed connected with substrate 140.
In addition, first finger 1371 and second finger 1372 are interlaced.Damping between first finger 1371 and second finger 1372 for example can produce and/or adjust by friction in direct contact, adhesion, friction, the resisting medium and/or electric field.Especially, first finger 1371 can be connected with first current potential, and second finger 1372 can be connected with second current potential.Control and/or regulate the potential difference between first current potential and second current potential in addition, thus the damping characteristic that meets destination influence, control or dynamically regulate damping unit 137.Therefore can change, regulate and/or pre-determine the machine driving of the suspension arrangement 1302 that comprises spring element 138 and damping unit 137 according to this embodiment.Therefore the preferred mechanical property of determining suspension arrangement 1302, make stress on the other parts that act on substrate 100 or micro mechanical system 4 and/or vibration basically targetedly with substrate 140 decoupling zeros.
Fig. 2 C shown in the schematic plan according to the micro mechanical system of the 5th embodiment of the present invention.According to this embodiment, in the 5th micro mechanical system 5, below second functional layer 122, wiring layer 161 is set.In order to explain, second functional layer 122 is shown in the first half of suspension arrangement 1303 with cutting open.This suspension arrangement 1303 can be as suspension arrangement 130,1201 or 1302 the same spring element and/or the damping units of describing with embodiments of the invention of comprising with interrelating.
In substrate 140, also be provided with micro mechanical sensor 152.This sensor for example can comprise relaxation oscillator 1502, and this relaxation oscillator is built in the functional layer 121 and passes through first area 1601, the second area 1602 of wiring layer 161 and the 3rd regional 1603 contactings of wiring layer 161 of wiring layer 161.According to this embodiment, can realize the electric contact connection of micro mechanical sensor 152 by suspension arrangement 1303 with advantageous manner.
Claims (10)
1. micro mechanical system (1,2,3,4,5) comprising:
Substrate (100);
Suspension arrangement (130,1301,1302,1303),
Substrate (140), wherein, this suspension arrangement (130,1301,1302,1303) with this substrate (140) be bearing in movingly this substrate (100) top and
Micro mechanical sensor (150,151,152) is characterized in that, this micro mechanical sensor (150,151,152) is set in this substrate (140).
2. according to the micro mechanical system of claim 1, it is characterized in that described micro mechanical sensor (150,151,152) comprises the acceleration transducer of micromechanics.
3. according to the micro mechanical system of claim 2, it is characterized in that the acceleration transducer of described micromechanics comprises movable mass (1501,1502) and is changes in capacitance with the conversion of motion of described mass (1501,1502).
4. according to the micro mechanical system of one of claim 1 to 3, it is characterized in that, first exhaustion layer (111) is arranged on the described substrate (100), first functional layer (121) is arranged on this first exhaustion layer (111), this first functional layer (121) that is arranged on second exhaustion layer (112) goes up and second functional layer (122) is arranged on this second exhaustion layer (112), wherein, this first functional layer (121) comprises described substrate (140), and this second functional layer (122) comprises described micro mechanical sensor (150,151,152).
5. according to the micro mechanical system of claim 4, it is characterized in that described first and second exhaustion layers (111,112) have silica, and described first and second one functional layer (121,122) has silicon.
6. according to the micro mechanical system of claim 4 or 5, it is characterized in that a wiring layer (160) is arranged between described first functional layer (121) and described second exhaustion layer (112).
7. according to the micro mechanical system of one of claim 1 to 6, it is characterized in that described suspension arrangement (130,1301,1302,1303) comprise spring element (134,136,138), and, described suspension arrangement (130,1301,1302,1303) flexibly supports described substrate (140).
8. according to the micro mechanical system of one of claim 1 to 7, it is characterized in that described suspension arrangement (130,1301,1302,1303) comprise damping unit (135,137), and, the motion of the described suspension arrangement described substrate of (130,1301,1302,1303) damping (140).
9. micro mechanical system according to Claim 8, it is characterized in that, described damping unit (135,137) comprises first and second groups of fingers (1371,1372), wherein, described first group of finger is provided with respect to described substrate (100) fixed-site ground, and described second group of finger is connected with described substrate (140), and, described first and second groups of fingers (1371,1372) are interlaced.
10. according to the micro mechanical system of claim 9, it is characterized in that described first group of finger is connected with first current potential, and described second group of finger is connected with second current potential, and, regulate described first and second current potentials, so that the motion of the described substrate of damping (140).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200710052367 DE102007052367A1 (en) | 2007-11-02 | 2007-11-02 | Micromechanical system |
DE102007052367.1 | 2007-11-02 | ||
PCT/EP2008/063116 WO2009056420A2 (en) | 2007-11-02 | 2008-10-01 | Micromechanical system |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101842313A true CN101842313A (en) | 2010-09-22 |
Family
ID=40514303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880113985A Pending CN101842313A (en) | 2007-11-02 | 2008-10-01 | Micromechanical system |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN101842313A (en) |
DE (1) | DE102007052367A1 (en) |
TW (1) | TWI471258B (en) |
WO (1) | WO2009056420A2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102530827A (en) * | 2010-11-23 | 2012-07-04 | 霍尼韦尔国际公司 | Vibration isolation interposer die |
CN103213934A (en) * | 2012-01-23 | 2013-07-24 | 罗伯特·博世有限公司 | Micromechanical structure and method for manufacturing a micromechanical structure |
CN104418285A (en) * | 2013-08-26 | 2015-03-18 | 罗伯特·博世有限公司 | Micromechanical component and method for manufacturing a micromechanical component |
CN104422436A (en) * | 2013-08-26 | 2015-03-18 | 罗伯特·博世有限公司 | Micromechanical component and method for producing a micromechanical component |
CN108872638A (en) * | 2017-05-08 | 2018-11-23 | 株式会社村田制作所 | Condenser type microelectron-mechanical accelerometer |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104891419B (en) * | 2015-06-29 | 2016-11-09 | 歌尔股份有限公司 | A kind of MEMS inertial sensor and manufacture method thereof |
DE102021202573B3 (en) | 2021-03-16 | 2022-07-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | MEMS TRANSDUCER WITH CUTS AND PROJECTIONS |
Family Cites Families (8)
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US5536988A (en) * | 1993-06-01 | 1996-07-16 | Cornell Research Foundation, Inc. | Compound stage MEM actuator suspended for multidimensional motion |
DE19526903B4 (en) * | 1995-07-22 | 2005-03-10 | Bosch Gmbh Robert | Yaw rate sensor |
US6330102B1 (en) * | 2000-03-24 | 2001-12-11 | Onix Microsystems | Apparatus and method for 2-dimensional steered-beam NxM optical switch using single-axis mirror arrays and relay optics |
US6632698B2 (en) * | 2001-08-07 | 2003-10-14 | Hewlett-Packard Development Company, L.P. | Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS |
KR100431004B1 (en) * | 2002-02-08 | 2004-05-12 | 삼성전자주식회사 | Rotation type MEMS gyroscpoe of a decoupled structure |
US20050066728A1 (en) * | 2003-09-25 | 2005-03-31 | Kionix, Inc. | Z-axis angular rate micro electro-mechanical systems (MEMS) sensor |
US7187100B2 (en) * | 2004-04-20 | 2007-03-06 | Advanced Numicro Systems, Inc. | Dimensions for a MEMS scanning mirror with ribs and tapered comb teeth |
KR100652952B1 (en) * | 2004-07-19 | 2006-12-06 | 삼성전자주식회사 | The MEMS gyroscope with coupling spring |
-
2007
- 2007-11-02 DE DE200710052367 patent/DE102007052367A1/en not_active Withdrawn
-
2008
- 2008-10-01 WO PCT/EP2008/063116 patent/WO2009056420A2/en active Application Filing
- 2008-10-01 CN CN200880113985A patent/CN101842313A/en active Pending
- 2008-10-31 TW TW97141910A patent/TWI471258B/en not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102530827A (en) * | 2010-11-23 | 2012-07-04 | 霍尼韦尔国际公司 | Vibration isolation interposer die |
CN103213934A (en) * | 2012-01-23 | 2013-07-24 | 罗伯特·博世有限公司 | Micromechanical structure and method for manufacturing a micromechanical structure |
CN104418285A (en) * | 2013-08-26 | 2015-03-18 | 罗伯特·博世有限公司 | Micromechanical component and method for manufacturing a micromechanical component |
CN104422436A (en) * | 2013-08-26 | 2015-03-18 | 罗伯特·博世有限公司 | Micromechanical component and method for producing a micromechanical component |
CN108872638A (en) * | 2017-05-08 | 2018-11-23 | 株式会社村田制作所 | Condenser type microelectron-mechanical accelerometer |
CN108872638B (en) * | 2017-05-08 | 2020-12-01 | 株式会社村田制作所 | Capacitive micro-electromechanical accelerometer |
Also Published As
Publication number | Publication date |
---|---|
TW200927637A (en) | 2009-07-01 |
WO2009056420A3 (en) | 2009-10-22 |
TWI471258B (en) | 2015-02-01 |
DE102007052367A1 (en) | 2009-05-07 |
WO2009056420A2 (en) | 2009-05-07 |
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Application publication date: 20100922 |