CN101840941B - Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof - Google Patents
Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof Download PDFInfo
- Publication number
- CN101840941B CN101840941B CN2010101185238A CN201010118523A CN101840941B CN 101840941 B CN101840941 B CN 101840941B CN 2010101185238 A CN2010101185238 A CN 2010101185238A CN 201010118523 A CN201010118523 A CN 201010118523A CN 101840941 B CN101840941 B CN 101840941B
- Authority
- CN
- China
- Prior art keywords
- layer
- iron
- film material
- target
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an iron-doped carbon thin-film material with photovoltaic and photoconductive effects and a preparation method thereof, belonging to the technical field of thin-film solar cell and the photoelectric device which use the new energy. The iron-doped carbon thin-film material is prepared by arranging an aluminum oxide layer and an iron-doped carbon layer on an n-type Si (silicon) substrate with the pulsed laser deposition process without using any toxic, flammable and explosive substances during the preparation process. The iron-doped carbon thin-film material has excellent performances and low price and is the excellent material for the visible light sensor material and the potential photovoltaic device. When irradiated by a simulated sunlight source of 100 mW/cm2 (AM1.5) in the room temperature, the photoelectric thin film can ensure that the device has the open-circuit voltage of 436 mV, the short-circuit current of 14 mA/cm2 and the fill factor of more than 33percent. The photoelectric thin film has the photoconductive change value of more than 400 times under the condition that the test voltage is about 1 V.
Description
Technical field
The invention belongs to thin-film solar cells and photoelectric device material technology field in the new forms of energy, particularly have iron-doped carbon thin-film material of photovoltaic and photoconductive effect and preparation method thereof.
Background technology
Flourish along with modern industry, traditional fossil energy is constantly exhausted, and the environmental pollution that causes thus is also serious day by day.Therefore, how to utilize solar energy now to become the emphasis of countries in the world government energy research efficiently, the development of high-efficiency and low-cost solar cell is exactly one of important channel of solar energy utilization.Solar-energy photo-voltaic cell is the device that luminous energy is converted into electric energy by photoelectric effect.The operation principle of photovoltaic effect is: solar irradiation is tied the formation hole-electron pair at semiconductor P-N, and under the effect of P-N knot electric field, the hole flows to the P district by the N district, and electronics flows to the N district by the P district, just forms electric current behind the connection circuit.By changing the connection in series-parallel form of PN junction, can obtain the output voltage of different numerical value; Can obtain different power outputs by the area that changes photovoltaic cell.Solar cell is a kind of regenerative resource of cleaning.Although account for the solar cell of main flow at present is monocrystalline silicon, polysilicon, non-crystal silicon solar cell, because complicated preparation technology and too high production cost have limited its extensive use in daily life.
In whole solar irradiation spectrum, visible light part probably accounts for 48%, wants to improve battery efficiency, and it is extremely important to take full advantage of light infrared in the sunshine and the near-infrared part, and this just needs the photovoltaic material of narrow band gap.The amorphous carbon film material is various because of its preparation method, and material cheaply is easy to get, structural material stability height, and advantage such as raw material resources is abundant and nontoxic, and the band gap adjustability is big becomes a kind of new material that might improve very much efficiency of solar cell.
In eighties of last century nineties, researchers have just begun the research of a-C/Si solar cell material, as H.Kiyoda, K.Okano (Fabrication of metal-insulator-semiconductor devices usingpolycrystalline diamond film, Jpn.J.Appl.Phys.30 (1991) L2015-L2017.), J.W.Glesener (A thin-film Schottky diode fabricated from flame-grown diamond, J.Appl.Phys.70 (1991) 5144-5146.) at first studies the direct film photovoltaic material that constitutes heterojunction structure with the weak p type and the n type silicon of amorphous carbon film.Many workers have launched the research to materials subsequently.As Mohamad Rusop, Tetsuo Soga, Takashi Jimbo (Solar Energy Materials ﹠amp; SolarCells 90 (2006) 3214-3222) reported the amorphous carbon film formation n-C:P/p-Si solar cell that on single crystalline Si, prepares phosphorus doping with plasma enhanced chemical vapor deposition method (PECVD).This battery open-circuit voltage and short-circuit current density under the irradiation of a simulated sunlight reach respectively 0.236V and 7.34mA/cm
2Ashraf M.M.Omera_and Sudip Adhikari (APPLIED PHYSICS LETTERS87,2005 (161912)) reported the p-C:I/n-Si solar cell that on silicon base, prepares iodine doping amorphous carbon film with chemical gaseous phase depositing process (CVD), at AM1.5,100mW/cm
2Obtain 0.177V and 1.15mA/cm under the illumination
2Photovoltaic effect.And Jiecai Han, Manlin Tan, Jiaqi Zhu, and Songhe Meng (APPLIED PHYSICS LETTERS 90, (2007) 083508-083510) reported that open-circuit voltage and short circuit current reach 0.236V and 7.337mA/cm with the n-C:B/p-Si solar cell of boron doping carbon film preparation
2
These carbon film materials mostly with the gas phase process deposition, have used in a large number hydrocarbon gas or ammonia etc., or have used toxic material in the preparation process, thereby all very high to preparation technology's environmental requirement and safety requirements.And the amplitude to the response of light is still waiting further raising.High-quality thin film semiconductor joint solar cell also should satisfy following requirement simultaneously: 1, film surface smooth, continuous, do not have a crackle; 2, surface and interface free of pinholes, 3, pn knot face is enough smooth, and interface atom counterdiffusion need be inhibited.
Summary of the invention
The purpose of this invention is to provide iron-doped carbon thin-film material with photovoltaic and photoconductive effect and preparation method thereof.
Have the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, it is characterized in that: on n type Si substrate, be provided with the carbon-coating of alumina layer and doping iron successively, form iron-doped carbon thin-film material with photovoltaic and photoconductive effect.
Have the preparation method of the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, it is characterized in that: adopt the preparation of pulsed laser deposition method, with N-shaped Si substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, with mechanical pump and molecular pump the back end in the coating chamber is vacuumized, and makes the back end vacuum maintain 5 * 10
-4Below the Pa, heated substrate is to depositing temperature: 300 ℃～500 ℃, under above-mentioned depositing temperature, bombard successively Al with the pulse that the KrF laser instrument produces
2O
3Monocrystalline target, Fe target and high-purity C target, depositing Al successively on N-shaped Si substrate
2O
3Layer, Fe layer and amorphous carbon layer, deposition maintains the 10min～30min that anneals on the depositing temperature with thin-film material after finishing, and allows the Fe atom diffuse in the amorphous carbon layer, naturally cools to room temperature again, obtains having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
Described Al
2O
3Layer sedimentation time is 3～4min, and described Fe layer sedimentation time is 5～6min, and described amorphous carbon layer sedimentation time is 15min.
Described Al
2O
3Monocrystalline target purity is 99.99%.
Described Fe target purity is 99.99%.
Described high-purity C target purity is 99.9%.
Beneficial effect of the present invention is:
1. this material has superior performance, and is cheap, is the photovoltaic device of a kind of excellent visible light sensor material and potentialization.In preparation process, do not use any poisonous flammable and explosive substance.The p-n junction face is smooth, and interface atom counterdiffusion is by thin layer Al
2O
3Be effectively suppressed.Preliminary result of study shows: this optoelectronic film is in room temperature, 100mW/cm
2Under the simulated solar light source irradiation of (AM 1.5), the open circuit voltage of device reaches 436mV, short circuit current is 14mA/cm
2, fill factor, curve factor is more than 33%.Simultaneously, when test voltage was condition about 1V, the photoconduction of film changed and can reach more than 400 times.
2. adopt the pulsed laser deposition method to prepare this film, method is simple, process stabilizing, and controllability is good, has higher preparation efficiency.And in film deposition process, material that need not be inflammable, explosive, poisonous, compliance with environmental protection requirements.
Description of drawings
Fig. 1 is embodiment's 1 (a-C:Fe)/Al
2O
3The schematic diagram of the structure of/Si iron-doped carbon thin-film material and photoconductive property test thereof;
Fig. 2 is embodiment 1 resulting (a-C:Fe)/Al
2O
3The room temperature I-V transmission characteristic of/Si iron-doped carbon thin-film material;
Fig. 3 is (a-C:Fe)/Al resulting under the different iron depositions
2O
3The room temperature I-V transmission characteristic of/Si iron-doped carbon thin-film material under illumination;
Fig. 4 is embodiment 1 resulting (a-C:Fe)/Al
2O
3The photoconductive changing value that the different test voltages of/Si iron-doped carbon thin-film material are corresponding;
Number in the figure: 1, n type Si substrate; 2, Al
2O
3Layer; 3, the carbon-coating of doping iron; 4, metal electrode.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
(a-C:Fe)/Al with photovoltaic and photoconductive effect
2O
3/ Si iron-doped carbon thin-film material is provided with the carbon-coating 3 (a-C:Fe layer) of alumina layer 2 and doping iron successively on N-shaped Si substrate 1, form the iron-doped carbon thin-film material with photovoltaic and photoconductive effect.
The iron-doped carbon thin-film material that adopts the preparation of pulsed laser deposition method to have photovoltaic and photoconductive effect, this method step is as follows: with N-shaped Si (100) substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, with mechanical pump and molecular pump the back end in the coating chamber is evacuated to 5 * 10
-4Behind the Pa, heated substrate is to depositing temperature: 400 ± 50 ℃, and under above-mentioned depositing temperature, the laser pulse bombardment Al that produces with KrF laser instrument (Lambda Physics LPX205,248nm, 25ns FWHM)
2O
3The monocrystalline target, depositing Al
2O
3Layer film, pulsed laser energy is 360mJ, frequency is 1Hz, sedimentation time is 4min, adjust afterwards target, under same depositing temperature, with bombardment Fe target, deposit the Fe layer film, pulsed laser energy is 300mJ, frequency still is 1Hz, and sedimentation time is 5 minutes, adjusts afterwards target again, the high-purity C target of bombardment under same depositing temperature, the depositing amorphous carbon layer film, pulsed laser energy is 300mJ, pulse frequency is adjusted into 6Hz, sedimentation time is 15min, deposition maintains the 15min that anneals on the depositing temperature with thin-film material after finishing, and allows the Fe atom diffuse in the amorphous carbon layer, naturally cool to again room temperature, obtain having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
Described Al
2O
3Monocrystalline target purity is 99.99%, and described Fe target purity is 99.99%, and described high-purity C target purity is 99.9%.
Other technological parameters in the deposition process also comprise: target-substrate distance is about 50mm, and the bundle spot size of laser beam on target is about 2 * 2mm.The resistivity of used n type Si (100) substrate is 0.55-0.8 Ω cm in the experiment.Before the experiment, substrate is put into acetone and alcohol heating ultrasonic cleaning 2 to 3 times successively, every all over 5min-10min, carry out corrosion treatment with the HF acid solution that dilutes again.Prepared (a-C:Fe)/Al
2O
3The thickness of/Si film sample is measured by TEM (JEM-2011); Interfacial structure uses TEM (JEM-2011) to observe equally; The photoelectric properties test is measured by solar simulator (Oriel, 91192).
(the a-C:Fe)/Al of present embodiment preparation
2O
3/ Si iron-doped carbon thin-film material, its structure and photoelectric properties test schematic diagram thereof are as shown in Figure 1.Used metal electrode 4 is for pressing indium and forming Ohmic contact.
In addition, also investigating difference mixes iron content (Fe layer sedimentation time is respectively 3min, 9min, 12min, all the other parameters are identical with present embodiment) and the room temperature I-V transmission characteristic of the carbon film material of present embodiment (Fe layer sedimentation time is 5min) preparation, the result as shown in Figure 3, Fig. 3 is different room temperature I-V transmission characteristics of mixing the iron content carbon film material, also is simultaneously that difference is mixed iron amount carbon film material at same light photograph (100mW/cm
2The simulated solar light source of (AM 1.5)) the photovoltaic effect response comparison diagram under.Can find out that mixing iron content in the film has material impact to the photovoltaic performance of device, photovoltaic effect is the most remarkable when the deposited iron film time is 5min, and open-circuit voltage and short circuit current reach respectively 436mV and 14.1mA/cm
2The iron doping will directly affect the photovoltaic performance of device.
Fig. 2 for the iron-doped carbon thin-film material (Fe layer sedimentation time is 5min) of present embodiment preparation under the constant pressure source test condition, the photoconductive changing value that different test voltages are corresponding.Be reverse bias during less than 1V in test voltage, under the dark condition and 100mW/cm
2The ratio of the electric current that detects under the simulated solar illumination condition of (AM 1.5), that is the ratio of dark resistance and light resistance can reach more than 400 times.
Fig. 4 is resulting (the a-C:Fe)/Al of present embodiment
2O
3/ Si iron-doped carbon thin-film material (Fe layer sedimentation time is 5min) is at illumination (100mW/cm
2The simulated solar light source of (AM 1.5)) the photoconductive changing value under.As can be seen from the figure, its electricity is led variation and can be reached more than 200 times, greater than the photoconductive changing value of reporting on the document.
(a-C:Fe)/Al with photovoltaic and photoconductive effect
2O
3/ Si iron-doped carbon thin-film material is provided with the carbon-coating of alumina layer and doping iron successively on N-shaped Si substrate, form the iron-doped carbon thin-film material with photovoltaic and photoconductive effect.
The iron-doped carbon thin-film material that adopts the preparation of pulsed laser deposition method to have photovoltaic and photoconductive effect, this method step is as follows: with N-shaped Si (100) substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, with mechanical pump and molecular pump the back end in the coating chamber is evacuated to 5 * 10
-4Behind the Pa, heated substrate is to depositing temperature: 450 ± 50 ℃, and under above-mentioned depositing temperature, the laser pulse bombardment Al that produces with KrF laser instrument (Lambda Physics LPX205,248nm, 25ns FWHM)
2O
3The monocrystalline target, depositing Al
2O
3Layer film, pulsed laser energy is 360mJ, frequency is 1Hz, sedimentation time is 3min, adjust afterwards target, under same depositing temperature, with bombardment Fe target, deposit the Fe layer film, pulsed laser energy is 300mJ, frequency still is 1Hz, and sedimentation time is 6 minutes, adjusts afterwards target again, the high-purity C target of bombardment under same depositing temperature, the depositing amorphous carbon layer film, pulsed laser energy is 300mJ, pulse frequency is adjusted into 6Hz, sedimentation time is 15min, deposition maintains the 15min that anneals on the depositing temperature with thin-film material after finishing, and allows the Fe atom diffuse in the amorphous carbon layer, naturally cool to again room temperature, obtain having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
Described Al
2O
3Monocrystalline target purity is 99.99%, and described Fe target purity is 99.99%, and described high-purity C target purity is 99.9%.
Other technological parameters in the deposition process also comprise: target-substrate distance is about 50mm, and the bundle spot size of laser beam on target is about 2 * 2mm.The resistivity of used n type Si (100) substrate is 0.55-0.8 Ω cm in the experiment.Before the experiment, substrate is put into acetone and alcohol heating ultrasonic cleaning 2 to 3 times successively, every all over 5min-10min, carry out corrosion treatment with the HF acid solution that dilutes again.
(a-C:Fe)/Al that present embodiment is prepared
2O
3/ Si iron-doped carbon thin-film material, only need add littler test reverse bias (＜1.0V) very sensitive photoconductive effect arranged namely, under the dark condition and 100mW/cm
2The ratio that detects dark resistance and light resistance under the simulated solar illumination condition of (AM 1.5) reaches more than 400 times.From preparation technology's angle, the whole process of film preparation needn't be used inflammable, explosive, poisonous gas, compliance with environmental protection requirements.
Claims (5)
1. the iron-doped carbon thin-film material that has photovoltaic and photoconductive effect, it is characterized in that: the carbon-coating that on N-shaped Si substrate, is provided with successively alumina layer and doping iron, formation has the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, adopt the preparation of pulsed laser deposition method, at depositing temperature: under 300 ℃～500 ℃, bombard successively Al with the pulse that the KrF laser instrument produces
2O
3Monocrystalline target, Fe target and high-purity C target, depositing Al successively on N-shaped Si substrate
2O
3Layer, Fe layer and amorphous carbon layer, depositing Al
2O
3During layer film, pulsed laser energy is 360mJ, and frequency is 1Hz, and during deposition Fe layer, pulsed laser energy is 300mJ, and frequency is 1Hz, and during the depositing amorphous carbon layer film, pulsed laser energy is 300mJ, and pulse frequency is 6Hz, described Al
2O
3Layer sedimentation time is 3～4min, described Fe layer sedimentation time is 5～6min, described amorphous carbon layer sedimentation time is 15min, after deposition finishes, thin-film material is maintained the 10min～30min that anneals on the depositing temperature, allow the Fe atom diffuse in the amorphous carbon layer, naturally cool to again room temperature, obtain having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect.
2. have the preparation method of the iron-doped carbon thin-film material of photovoltaic and photoconductive effect, it is characterized in that: adopt the preparation of pulsed laser deposition method, with N-shaped Si substrate, Al
2O
3The vacuum coating that monocrystalline target, Fe target and high-purity C target are put into pulsed laser deposition equipment is indoor, with mechanical pump and molecular pump the back end in the coating chamber is vacuumized, and makes the back end vacuum maintain 5 * 10
-4Below the Pa, heated substrate is to depositing temperature: 300 ℃～500 ℃, under above-mentioned depositing temperature, bombard successively Al with the pulse that the KrF laser instrument produces
2O
3Monocrystalline target, Fe target and high-purity C target, depositing Al successively on N-shaped Si substrate
2O
3Layer, Fe layer and amorphous carbon layer, depositing Al
2O
3During layer film, pulsed laser energy is 360mJ, and frequency is 1Hz, during deposition Fe layer, pulsed laser energy is 300mJ, and frequency is 1Hz, during the depositing amorphous carbon layer film, pulsed laser energy is 300mJ, and pulse frequency is 6Hz, after deposition finishes, thin-film material is maintained the 10min～30min that anneals on the depositing temperature, allow the Fe atom diffuse in the amorphous carbon layer, naturally cool to again room temperature, obtain having the iron-doped carbon thin-film material of photovoltaic and photoconductive effect;
Described Al
2O
3Layer sedimentation time is 3～4min, and described Fe layer sedimentation time is 5～6min, and described amorphous carbon layer sedimentation time is 15min.
3. the preparation method with iron-doped carbon thin-film material of photovoltaic and photoconductive effect according to claim 2 is characterized in that: described Al
2O
3Monocrystalline target purity is 99.99%.
4. the preparation method with iron-doped carbon thin-film material of photovoltaic and photoconductive effect according to claim 2 is characterized in that: described Fe target purity is 99.99%.
5. the preparation method with iron-doped carbon thin-film material of photovoltaic and photoconductive effect according to claim 2 is characterized in that: described high-purity C target purity is 99.9%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101185238A CN101840941B (en) | 2010-03-05 | 2010-03-05 | Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101185238A CN101840941B (en) | 2010-03-05 | 2010-03-05 | Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101840941A CN101840941A (en) | 2010-09-22 |
| CN101840941B true CN101840941B (en) | 2011-11-09 |
Family
ID=42744200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101185238A Expired - Fee Related CN101840941B (en) | 2010-03-05 | 2010-03-05 | Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101840941B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8697986B2 (en) * | 2011-03-01 | 2014-04-15 | Au Optronics Corporation | Photovoltaic device with double-junction |
| CN102263143A (en) * | 2011-07-18 | 2011-11-30 | 清华大学 | Heterojunction film material having sunlight photovoltaic effect and preparation method thereof |
| CN105551934B (en) * | 2015-12-10 | 2017-12-08 | 三峡大学 | A kind of siliceous quantum dot carbon silica-base film material preparation method |
| CN106505046B (en) * | 2016-10-17 | 2018-11-20 | 中国石油大学(华东) | It is a kind of using insulating substrate as carbon-aluminium-carbon semiconductor film material of substrate and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1200468C (en) * | 2003-01-09 | 2005-05-04 | 清华大学 | Fe-C film material with room temperature positive giant magnetoresistive effect and prepared via PLD process |
| CN100470868C (en) * | 2004-09-14 | 2009-03-18 | 清华大学 | FexCl-x/Fe/Si multilayer coating material with low field room temperature huge magnetic resistance effect |
| CN101359716B (en) * | 2008-09-28 | 2011-01-26 | 清华大学 | Co(x)C(1-x)/Co/Si multilayered structure granule film material having room temperature low field large magnetic resistance effect |
-
2010
- 2010-03-05 CN CN2010101185238A patent/CN101840941B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101840941A (en) | 2010-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xiao et al. | High-efficiency silicon solar cells—materials and devices physics | |
| Okamoto et al. | Device physics and design of a-Si ITO/pin heteroface solar cells | |
| Schropp et al. | Amorphous silicon, microcrystalline silicon, and thin-film polycrystalline silicon solar cells | |
| CN103000742B (en) | A kind of solar cell of band gap gradual change silicon quantum dot multilayer film and preparation method | |
| CN103681889B (en) | Electret-structure-introduced efficient solar cell and preparing method thereof | |
| Untila et al. | Contact resistance of indium tin oxide and fluorine-doped indium oxide films grown by ultrasonic spray pyrolysis to diffusion layers in silicon solar cells | |
| De Nicolas | a-Si: H/c-Si heterojunction solar cells: back side assessment and improvement | |
| CN101840941B (en) | Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof | |
| Boccard et al. | Silicon oxide treatment to promote crystallinity of p-type microcrystalline layers for silicon heterojunction solar cells | |
| Fang et al. | Amorphous silicon/crystal silicon heterojunction double-junction tandem solar cell with open-circuit voltage above 1.5 V and high short-circuit current density | |
| Yang et al. | All pin hydrogenated amorphous silicon oxide thin film solar cells for semi-transparent solar cells | |
| Fang et al. | High-efficiency micromorph solar cell with light management in tunnel recombination junction | |
| Izzi et al. | TCO optimization in Si heterojunction solar cells on p-type wafers with n-SiOx emitter | |
| Sriprapha et al. | Development of thin film a-SiO: H/a-Si: H double-junction solar cells and their temperature dependence | |
| Benigno et al. | Effect of intrinsic layer energy gap and thicknesses optimization on the efficiency of pin amorphous silicon solar cell | |
| Ma et al. | Microstructure and photoelectric properties of P-doped silicon-rich SiNx film as an n-type layer for PIN-type amorphous silicon thin film solar cells | |
| Petti et al. | Thin Films in Photovoltaics | |
| CN101656274B (en) | Method for improving open circuit voltage of amorphous silicon thin film solar cell | |
| CN102263143A (en) | Heterojunction film material having sunlight photovoltaic effect and preparation method thereof | |
| Ali et al. | Comprehensive comparison between the experimental and simulated characteristics of the mono-crystalline silicon solar cell using SCAPS-1D | |
| Wang et al. | Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with> 2 V Open‐Circuit Voltage | |
| Xiao et al. | Status and progress of high-efficiency silicon solar cells | |
| Lien et al. | Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Si heterojunction solar cell applications | |
| TW201126742A (en) | High-efficiency amorphous silicon photovoltaic devices | |
| Sahaya et al. | Cost performance of thin film and crystalline photovoltaic cells–a comparative study |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111109 Termination date: 20170305 |