CN101840846A - 半导体封装的金属部分上的金属可焊性保持涂层 - Google Patents
半导体封装的金属部分上的金属可焊性保持涂层 Download PDFInfo
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Abstract
本发明的实施方式涉及半导体封装的连接体上用以防止氧化的金属可焊性保持涂层。经分割的半导体封装在连接体的暴露金属区域上可能具有污染物,例如氧化物。当半导体封装没有保存在适当的环境中时,在暴露金属区域上通常会发生氧化。铜氧化物阻止了连接体良好地进行焊接。在半导体阵列的锯切期间、锯切之后或两者时,使用本发明的防锈溶液来涂敷连接体,以保持金属可焊性。防锈溶液是金属溶液,其有益地允许半导体封装不必在制造之后立即进行组装。
Description
相关申请
本申请根据35 U.S.C 119(e)部分要求2009年3月12提交的名称为“Metallic Solderability Preservation(MSP)Coating on Metal Part ofSemiconductor Package to Prevent Oxide”的共同未决美国临时专利申请序列号61/210,125的优先权权益,在此通过引用将其并入。
技术领域
本发明涉及半导体器件制造的领域。更具体地,本发明涉及半导体封装的金属部分上用以防止氧化的金属可焊性保持涂层。
背景技术
半导体器件阵列包含个体集成电路或者半导体封装。如图1A所示,半导体封装的连接体105暴露于半导体阵列100的顶部。连接体105通常由铜制成。为了防止铜表面的氧化,通过电镀对连接体105镀敷有引线精整材料,诸如亚光锡(Sn)。结果,连接体105’的顶面此后是镀锡的,如图1B所示。
分割(singulation)是从模制片中分离每个半导体封装的过程。切割(dicing)或者锯切(sawing)是将半导体阵列100’分割为个体或经分割的半导体封装的过程。传统上,经过电镀的半导体阵列100’被切割为经分割的半导体封装,以便运送给消费者从而组装到印刷电路板上。图1C示出了切割半导体阵列100’的锯115。锯115通常沿着跨过镀敷的连接体105’的锯切路径110,得到经分割的半导体封装的外部边缘上的连接体。
图2A示出了在***边缘上具有多个连接体205的经分割的半导体封装200。尽管连接体的顶部205a镀敷有锡,但是连接体的侧壁205b是暴露的(例如,没有进行锡镀),这是因为切割是在利用引线精整材料对半导体阵列100进行电镀之后进行的。如果经分割的半导体封装200在分割之后被保存在不适当的环境和/或条件中(例如,空气中的湿气、酸、碱、盐、油、抛光的侵蚀性金属以及其他固体和液体化学品),则暴露的表面205b变成了潜在腐蚀210如铜氧化物的位置,如图2B所示。该老化过程称为氧化。暴露的表面205b通常沉积有氧化物以及其他非金属化合物的污染层210,其常常干扰或者阻碍焊料的可湿润性(wettability)。得到的氧化物层降低了可焊性,因为污染物210阻止了金属良好地焊接。氧化率可能随着温度或者湿度的增加而增加。焊接问题是器件故障的一个常见原因。
将经分割的半导体封装200组装到印刷电路板上需要非常清洁的表面。由于金属氧化物形成了阻止熔融的焊料形成真正冶金键合的障碍,因此必须在焊接之前对金属氧化物加以去除,或是在最初得以避免。
本发明至少解决现有技术中的这些限制。
发明内容
本发明的第一方面是一种防止在半导体封装连接体的金属表面上形成污染物的方法。所述方法包括:使用清洁剂来执行对半导体封装的第一清洁,从而降低不期望材料的表面张力。执行第一清洁包括:将半导体封装沉浸在清洁剂中。在某些实施方式中,半导体封装在50℃下在清洁剂中沉浸5分钟。在某些实施方式中,清洁剂是酸。所述方法还包括:执行对半导体封装的第一DI水清洗,由此去除不期望的材料和清洁剂。所述方法还包括:执行对半导体封装的第二清洁。在某些实施方式中,第二清洁是微刻蚀,其中所述微刻蚀在金属连接体的表面上产生一致的形貌。在某些实施方式中,第二清洁包括将半导体封装沉浸在化学浴中。化学浴是过氧化氢、硫酸、过硫酸钠或者任何适当的化学浴。在某些实施方式中,半导体封装在40℃下沉浸在化学浴中约60秒。所述方法进一步包括:执行对半导体封装的第二DI水清洗,从而确保金属连接体的暴露表面是清洁的并且准备就绪可以进行处理。对半导体封装进行预浸渍(predip),从而激活表面。在某些实施方式中,预浸渍包括去除氧化物以及在30℃下在预浸渍溶液中对清洁表面进行湿化30秒,其中湿的表面促进同质金属表面精整。预浸渍溶液优选地是具有有效防锈效果的有机水分散液。所述方法还包括:利用防锈溶液来处理半导体封装。在某些实施方式中,所述处理步骤包括利用防锈溶液来喷涂半导体封装。备选地,所述处理步骤包括利用防锈溶液来浸渍半导体封装。防锈溶液优选地是金属溶液。在某些实施方式中,防锈溶液以45-52℃或者63-68℃施加于半导体封装。防锈溶液施加于半导体封装4到12分钟。所述方法还包括:执行对半导体封装的第三DI水清洗,从而清洁过量的化学物和离子污染物;以及后浸渍半导体封装,从而保护金属涂层。金属涂层防止氧化。后浸渍溶液是酸基或碱基之一。所述方法还包括:执行对半导体封装的第四DI水清洗,以及干燥半导体封装。在某些实施方式中,所述方法还包括:将半导体封装焊接到印刷电路板。
本发明的第二方面是一种防止在半导体封装连接体的金属表面上形成污染物的方法。所述方法包括:利用防锈溶液来处理半导体封装。在某些实施方式中,所述处理步骤包括利用防锈溶液来喷涂半导体封装。备选地,所述处理步骤包括利用防锈溶液来浸渍半导体封装。防锈溶液优选地是金属溶液。在某些实施方式中,防锈溶液以45-52℃或者63-68℃施加于半导体封装。防锈溶液施加于半导体封装4到12分钟。所述方法还包括:执行对半导体封装的第一DI水清洗,从而清洁过量的化学物和离子污染物;以及干燥半导体封装。在某些实施方式中,所述方法还包括:将半导体封装焊接到印刷电路板。
本发明的第三方面也是用于防止在半导体封装连接体的金属表面上形成污染物的方法。所述方法包括:生成合剂以供分割期间使用,并且在分割期间利用所述合剂来喷涂半导体阵列,从而处理多个半导体封装。该生成步骤包括:向切削液中添加防锈溶液。防锈溶液是金属溶液。在某些实施方式中,防锈溶液以45-52℃或者63-68℃施加于多个半导体封装。防锈溶液施加于多个半导体封装4到12分钟。所述方法还包括:执行对至少一个半导体封装的第一DI水清洗,以及干燥所述至少一个半导体封装。在某些实施方式中,所述方法还包括:将至少一个半导体封装焊接到印刷电路板。
本发明的第四方面是一种保持半导体封装的金属可焊性的方法。所述方法包括:利用金属溶液来涂敷连接体,其中在锯切半导体阵列期间或者之后进行所述涂敷,其中所述锯切产生多个半导体封装,其中所述金属溶液配置用于防止金属氧化。所述金属溶液是防锈溶液。防锈溶液是锡、银、金、镍金或者任何适当的金属溶液。在某些实施方式中,在锯切半导体阵列之后进行涂敷时,通过将半导体封装浸渍在金属溶液中来应用涂敷,或者通过利用金属溶液喷涂半导体封装来应用涂敷。在某些实施方式中,当在半导体阵列的锯切期间进行涂敷时,通过喷涂来应用所述涂敷。在某些实施方式中,在45-52℃或者63-68℃进行涂敷。施加涂敷4到12分钟。在某些实施方式中,所述方法包括:当半导体封装暴露于污染物时,在所述涂敷之前,执行对半导体封装的至少一次清洁和至少一次清洗。在某些实施方式中,所述方法还包括:将半导体封装焊接到印刷电路板。
本发明的第五方面是一种金属可焊性的保持方法。将半导体阵列加载到分割机器中。所述半导体阵列包括多个半导体封装。利用防锈溶液处理半导体封装,从而镀敷半导体连接体的所有暴露表面。在某些实施方式中,加载步骤包括:将防锈溶液与切削液混合,使得在切割期间将合剂喷涂到半导体阵列上时进行所述处理。备选地,在分割之后利用防锈溶液来喷涂半导体封装。备选地,在分割之后将半导体封装浸渍到防锈溶液中。在某些实施方式中,防锈溶液是金属溶液。金属溶液是锡、银、金和镍金之一。在某些实施方式中,在45-52℃或者63-68℃施加防锈溶液。施加防锈溶液4到12分钟。在某些实施方式中,所述方法还包括将半导体封装焊接到印刷电路板。
附图说明
本发明的新颖特征记载在所附权利要求中。然而,为了说明之目的,在以下附图中记载了本发明的若干实施方式:
图1A示出了一种示例性半导体阵列;
图1B示出了涂敷有锡的连接体的半导体阵列;
图1C示出了利用锯来切割的半导体阵列;
图2A示出了在***边缘上具有多个连接体的经分割的半导体封装;
图2B示出了具有污染物的多个连接体;
图3示出了本发明一个实施方式中的保护经分割的半导体封装的示例性方法;
图4示出了本发明一个实施方式中的保护经分割的半导体封装的另一示例性方法;
图5示出了本发明一个实施方式中的保护经分割的半导体封装的又一示例性方法;
图6A示出了本发明某些实施方式中的通过喷涂技术对经分割的半导体封装的金属涂敷;
图6B示出了本发明某些实施方式中的通过浸渍技术对经分割的半导体封装的金属涂敷;以及
图7示出了本发明某些实施方式中经过处理的经分割的半导体封装。
具体实施方式
在下文描述中,为说明目的而记载了多个细节。然而,本领域普通技术人员将认识到,可以在不使用这些特定细节的情况下实践本发明。因此,并非意在将本发明限于示出的实施方式,而是按照与在此描述的原理和特征以及等效备选相一致的最宽泛的范围。
现在将详细参考附图中示出的本发明的实现。贯穿附图以及下文详细描述,将使用相同的参考标号来指代相同或类似的部分。
本发明的实施方式涉及半导体封装的金属接触上的用以防止氧化物形成的金属可焊性保持(MSP)涂层。经分割的半导体封装在半导体连接体的暴露金属区域(包括顶表面和侧壁)可能具有不期望的材料或者污染物,包括手印和氧化物。例如,当半导体封装没有保存在适当的环境中时,这些连接体的暴露的铜区域上通常会发生氧化。铜氧化物阻止了金属良好地焊接。
在半导体阵列的锯切期间或之后或这两者时,使用本发明的防锈溶液来涂敷金属连接体,以保持金属可焊性。在某些实施方式中,防锈溶液是金属溶液,诸如锡、银、金、镍金或者任何适当的溶液。利用防锈溶液来涂敷暴露的铜区域保护了暴露的铜不被氧化。此类涂敷有益地允许半导体封装不必在制造之后便立即组装(例如,焊接至印刷电路板)。
如上所述,可以在半导体阵列的锯切过程期间或之后保护经分割的半导体封装不被氧化,而不论半导体阵列先前是否已经进行了电镀。如果经分割的半导体封装在锯切过程之后的某时进行组装,则经分割的半导体封装有可能已经暴露于污染物,特别是在经分割的半导体封装没有恰当保存的情况下。由此,在金属可焊性的保持之前,要进行附加的测量以确保连接体没有碎屑。如果经分割的半导体封装在锯切过程之后立即组装,则无需进行附加的测量,因为经分割的半导体封装尚未暴露于污染物。下文对金属可焊性保持的每种情况进行详细研究。
情况1:锯切和暴露于污染物之后的保持
在某些实施方式中,在经分割的半导体封装已经暴露于污染物(例如,氧化物)之后,在连接体的暴露金属区域上涂敷防锈溶液。如上所述,当半导体封装在制造之后没有保存在适当环境中时,会发生氧化。连接体的暴露金属部分至少包括连接体的侧壁。如果半导体连接体之前没有经过电镀,则连接体的顶面也是暴露的。
假设半导体封装已经从半导体阵列进行了分割并且尚未组装(例如,焊接至印刷电路板),图3示出了本发明的一个实施方式中保护经分割的半导体封装的示例性方法300。过程开始于步骤305,使用清洁剂对半导体封装进行第一清洁。清洁剂有助于降低半导体封装上的不期望材料的表面张力。在某些实施方式中,在50℃的温度下将半导体封装沉浸在清洁剂中5分钟。在某些实施方式中,清洁剂是酸,其进行去垢和乳化,以有效地去除诸如氧化物和手印等污染物。
在步骤310,执行第一去离子(DI)水清洗。使用DI水来清洗半导体封装以去除污染物和清洁剂。
在步骤315,执行第二清洁步骤。在某些实施方式中,第二清洁步骤是微刻蚀。优选地,微刻蚀在金属连接体的表面上产生一致的形貌。各种化学浴可以用于对连接体进行微刻蚀,诸如过氧化氢、硫酸、过硫酸钠或者任何适当的化学浴。在某些实施方式中,在40℃的温度下将半导体封装沉浸在化学浴中约60秒。
在步骤320,执行第二DI水清洗。第二DI水清洗确保金属连接体的暴露表面是清洁的,并且已经就绪可以进行处理和保护。
然而,在处理和保护之前,在步骤325,执行预浸渍以激活金属连接体的表面。在某些实施方式中,在30℃的温度下执行去除剩余氧化物和/或污染物以及湿化表面的处理30秒。“湿”表面促进同质金属表面精整。在某些实施方式中,预浸渍溶液是有机水分散液,其具有有效防锈的效果。
在步骤330,使用防锈溶液来施加金属涂层。在某些实施方式中,防锈溶液是金属溶液,诸如锡、银、金、镍金或者任何适当的溶液。取决于金属膜的期望厚度,可以通过浸渍方法或者喷涂方法在高温或低温中施加金属涂层4到12分钟。在某些实施方式中,在45-52℃的相对较低的温度下,金属膜厚度约为0.35微米。在某些实施方式中,在63-68℃的相对较高的温度下,金属膜厚度约为1微米。
如图6A所示,可以通过使用防锈溶液610来喷涂经分割的半导体封装605,从而向经分割的半导体封装605施加金属涂层;或者如图6B所示,可以通过将经分割的半导体封装605浸渍在防锈溶液610中,来向经分割的半导体封装605施加金属涂层。如图所示,MSP喷涂和MSP浸渍是无电极镀敷技术。可以想到在半导体封装上施加金属涂层的其他无电极镀敷技术。
尽管在图6A-图6B中将经分割的半导体封装605示为已经经过了电镀(例如,对连接体的顶表面进行了镀敷),但是图3-图5中描述的保护经分割半导体封装的方法也适用于没有经过电镀的半导体阵列(例如,连接体的顶表面没有经过镀敷),其中,通过MSP工艺对顶表面和侧壁二者同时进行涂敷。在某些实施方式中,通过电镀在连接体的顶表面上形成的金属涂层约为10微米厚,而通过MSP在连接体的侧壁上形成的金属涂层约为1微米厚。
金属晶须化(whiskering)是丝状毛从金属表面的自发生长。晶须导致电子电路的短路和电弧。如果半导体阵列先前已经利用锡进行了电镀,则可能发生锡晶须化。如果金属离子是锡沉积,则锡晶须化是有关的因素。锡晶须像小型天线一样,影响电路阻抗。锡晶须可能会降低锡镀敷的导电性。在锡浴中使用银(Ag)衍生物作为添加剂通过在清洁的暴露表面上产生Ag膜来帮助防止晶须生长。Ag膜有益地降低了中间金属层构建的应力形成和速度二者。另外,晶须生长对于银、金、镍金涂层而言不是问题。
应当理解,本发明的实施方式适用于先前已经利用例如锡进行了涂敷的半导体封装。在这种情况下,本发明的金属溶液还将被用作“填充料”。由于金属溶液可以被用作填充料,因此可以最小化成本,这是因为可以在表面上施加较薄的金属溶液膜而不是较厚的膜。
在某些实施方式中,在步骤330与步骤325之间不需要单独的清洗,因为预浸渍溶液中不包含添加剂。在某些实施方式中,预浸渍溶液和金属涂层使用相同的成分。在其他实施方式中,可以在步骤330与步骤325之间执行单独的清洗。
在步骤335,执行第三DI水清洗。在利用后浸渍溶液来保护金属涂层之前,第三DI水清洗清洁过量的化学物以及任何离子污染物。在某些实施方式中,在步骤335使用的DI水是热的。
在步骤340,执行后浸渍,从而通过使用酸基或碱基来防止金属涂层上的氧化反应。对于喷涂和浸渍二者的处理,都执行后浸渍。
在步骤345,执行第四DI水清洗。在某些实施方式中,在步骤345使用的DI水是热的。在其他实施方式中,在步骤345使用的DI水是室温。
在步骤350,将半导体封装置于干燥器中。在某些实施方式中,干燥器是烘箱。过程300在步骤350之后终止。在保持金属可焊性之后的任何时间,可以将半导体封装焊接至印刷电路板,因为已经对连接体进行了保护或者保持,这有益地防止了金属氧化。
情况2:在锯切之后、但是暴露于污染物之前立即进行的保持
在某些实施方式中,在锯切半导体阵列之后、但是在经分割的半导体封装暴露于污染物之前,立即在经分割的半导体封装的连接体的暴露金属区域上涂敷防锈溶液。由于半导体封装在制造期间没有暴露于污染物,因此无需在处理之前清洁半导体封装。这种清洁是为了去除可能的污染物。
假设半导体封装已经从半导体阵列上进行了分割但是尚未组装(例如,焊接至印刷电路板),图4示出了在本发明的一个实施方式中保护经分割的半导体封装的另一示例性方法400。过程开始于步骤405,使用防锈溶液向最近分割的半导体封装施加金属涂层。由于步骤405类似于上文讨论的步骤330,因此在此不对步骤405进行详述。
在步骤410,执行第一DI水清洗。第一ID水清洗清洁过量的化学物以及任何离子污染物。步骤410类似于步骤335。
在某些实施方式中,在第一DI水清洗之后执行后浸渍和第二DI水清洗。尽管未示出这些步骤,但是其类似于上文描述的步骤340和345。
在步骤415,将半导体封装置于干燥器中。在某些实施方式中,干燥器是烘箱。过程400在步骤415之后结束。在保持金属可焊性之后的任意时间,可以将半导体封装焊接至印刷电路板,因为已经对连接体进行了保护或者保持,这有益地防止了金属氧化。
情况3:在锯切期间的保持
在某些实施方式中,可以在锯切过程期间防止经分割的半导体封装被氧化。由于半导体封装不会在制造期间暴露于污染物,因此无需在处理之前清洁半导体封装。此类清洁是为了去除可能的污染物。
假设半导体封装尚未从半导体阵列分割,图5示出了在本发明的一个实施方式中保护经分割的半导体封装的又一示例性方法500。过程开始于步骤505,将需要切割的半导体阵列加载到分割锯机器中。
在步骤510,向切削液施加诸如上文讨论的防锈溶液,以形成合剂。切削液通常用来在锯切期间冷却分割锯机器的刀片。在某些实施方式中,步骤505和步骤510可以互换,或者可以同时执行。
在步骤515,在半导体阵列的锯切过程期间喷涂合剂。锯切过程将半导体阵列切割为多个经分割的半导体封装。由此,每个经分割的半导体封装利用防锈溶液进行了处理。换言之,每个经分割的半导体封装涂敷有金属层,诸如锡、银、金、镍金或任何适当的溶液。
在步骤520,执行第一ID水清洗。第一DI水清洗清洁过量的化学物和任何离子污染物。在某些实施方式中,在步骤520使用的水是热的。在保持金属可焊性之后,可以将半导体封装焊接至印刷电路板。
在某些实施方式中,在第一DI水清洗之后,执行后浸渍和第二DI水清洗。尽管未示出这些步骤,但是其类似于上文描述的步骤340和345。
在步骤525,将半导体封装置于干燥器中。在某些实施方式中,干燥器是烘箱。过程500在步骤525之后结束。在保持金属可焊性之后的任意时间,可以将半导体封装焊接至印刷电路板,因为已经对连接体进行了保护或者保持,这有益地防止了金属氧化。
应当理解,MSP可以在其他情况下应用,以通过利用防锈溶液涂敷金属部分,来防止金属部分上诸如氧化物的污染物。
具有MSP涂层的经分割半导体封装
本发明的实施方式有益地改进了焊接至印刷电路板的封装的质量,这是因为在焊接之前去除了污染物。此外,上文描述的每个方法有益地防止了半导体封装的金属导体上的氧化。
图7示出了本发明某些实施方式中处理后的经分割的半导体封装700。可以区分具有MSP和没有MSP的半导体封装。特别地,没有MSP的半导体封装具有带颜色的含铜连接体,具体地,至少是如图2A所示的连接体的侧壁。相反,具有MSP的半导体封装具有整体是金属涂敷的连接体。如图7所示,连接体705的顶表面和侧壁具有相同的金属色。然而,如果使用两类金属,例如顶表面使用锡而侧壁使用金,则颜色将是不同的。
在某些实施方式中,金属涂层是质密的金属颗粒,其具有保持金属可焊性的大的多边形晶体结构。金属涂层可以是锡、银、金、镍金或者任何适当的金属涂层。金属可焊性保持保护了半导体封装的连接体不受潮,从而防止了金属氧化。金属可焊性保持允许在运送之前切割整个半导体阵列。
尽管已经参考多个特定细节描述了本发明,但是本领域的普通技术人员将会认识到,在不脱离本发明精神的情况下可以利用其他特定形式来具体化本发明。由此,本领域的普通技术人员将会理解,本发明不限于上文的说明性细节,而是由所附权利要求来限定。
Claims (45)
1.一种用于防止在半导体封装连接体的金属表面上形成污染物的方法,所述方法包括:
a.使用清洁剂来执行对半导体封装的第一清洁,从而降低不期
望材料的表面张力;
b.执行对所述半导体封装的第一DI水清洗,由此去除所述不期
望材料和所述清洁剂;
c.执行对所述半导体封装的第二清洁;
d.执行对所述半导体封装的第二DI水清洗,从而确保金属连接
体的暴露表面是清洁的并且准备就绪可以进行处理;
e.对所述半导体封装进行预浸渍,从而激活所述表面;
f.利用防锈溶液来处理所述半导体封装;
g.执行对所述半导体封装的第三DI水清洗,从而清洁过量的化
学物和离子污染物;
h.后浸渍所述半导体封装,从而保护金属涂层;
i.执行对所述半导体封装的第四DI水清洗;以及
j.干燥所述半导体封装。
2.如权利要求1所述的方法,其中执行所述第一清洁包括:将所述半导体封装沉浸在所述清洁剂中。
3.如权利要求2所述的方法,其中所述半导体封装在50℃下在所述清洁剂中沉浸5分钟。
4.如权利要求1所述的方法,其中所述清洁剂是酸。
5.如权利要求1所述的方法,其中所述第二清洁是微刻蚀,其中所述微刻蚀在所述金属连接体的表面上产生一致的形貌。
6.如权利要求1所述的方法,其中所述第二清洁包括将所述半导体封装沉浸在化学浴中。
7.如权利要求6所述的方法,其中所述化学浴是过氧化氢、硫酸和过硫酸钠之一。
8.如权利要求6所述的方法,其中所述半导体封装在40℃下沉浸在所述化学浴中约60秒。
9.如权利要求1所述的方法,其中所述预浸渍包括:去除氧化物,以及在30℃下在预浸渍溶液中对清洁表面进行湿化30秒,其中湿化的表面促进同质金属表面精整。
10.如权利要求9所述的方法,其中所述预浸渍溶液是具有有效防锈效果的有机水分散液。
11.如权利要求1所述的方法,其中所述处理包括:利用所述防锈溶液来喷涂所述半导体封装。
12.如权利要求1所述的方法,其中所述处理包括利用所述防锈溶液来浸渍所述半导体封装。
13.如权利要求1所述的方法,其中所述防锈溶液是金属溶液。
14.如权利要求1所述的方法,其中所述防锈溶液以45-52℃或者63-68℃施加于所述半导体封装。
15.如权利要求1所述的方法,其中所述防锈溶液施加于所述半导体封装4到12分钟。
16.如权利要求1所述的方法,其中后浸渍溶液是酸基或碱基之一。
17.如权利要求1所述的方法,其中所述金属涂层防止氧化。
18.一种用于防止在半导体封装连接体的金属表面上形成污染物的方法,所述方法包括:
a.利用防锈溶液来处理半导体封装;
b.执行对所述半导体封装的第一DI水清洗,从而清洁过量的化
学物和离子污染物;以及
c.干燥所述半导体封装。
19.如权利要求18所述的方法,其中所述处理包括:利用所述防锈溶液来喷涂所述半导体封装。
20.如权利要求18所述的方法,其中所述处理包括:利用所述防锈溶液来浸渍所述半导体封装。
21.如权利要求18所述的方法,其中所述防锈溶液是金属溶液。
22.如权利要求18所述的方法,其中所述防锈溶液以45-52℃或者63-68℃施加于所述半导体封装。
23.如权利要求18所述的方法,其中所述防锈溶液施加于所述半导体封装4到12分钟。
24.一种用于防止在半导体封装连接体的金属表面上形成污染物的方法,所述方法包括:
a.生成合剂以供分割期间使用;
b.在分割期间利用所述合剂来喷涂半导体阵列,从而处理多个
半导体封装;
c.对至少一个半导体封装执行第一DI水清洗;以及
d.干燥所述至少一个半导体封装。
25.如权利要求24所述的方法,其中所述生成包括:向切削液中添加防锈溶液。
26.如权利要求25所述的方法,其中所述防锈溶液是金属溶液。
27.如权利要求25所述的方法,其中所述防锈溶液以45-52℃或者63-68℃施加于所述多个半导体封装。
28.如权利要求25所述的方法,其中所述防锈溶液施加于所述多个半导体封装4到12分钟。
29.一种用于保持半导体封装的金属可焊性的方法,所述方法包括:利用金属溶液来涂敷连接体,其中在锯切半导体阵列期间或者之后进行所述涂敷,其中所述锯切产生多个半导体封装,其中所述金属溶液配置用于防止金属氧化。
30.如权利要求29所述的方法,其中所述金属溶液是防锈溶液。
31.如权利要求29所述的方法,其中所述防锈溶液是锡、银、金和镍金之一。
32.如权利要求29所述的方法,其中,当所述涂敷在锯切所述半导体阵列之后进行时,通过将所述半导体封装浸渍在所述金属溶液中来施加所述涂敷,或者通过利用所述金属溶液喷涂所述半导体封装来施加所述涂敷。
33.如权利要求29所述的方法,其中当所述涂敷在所述半导体阵列的锯切期间进行时,通过喷涂来施加所述涂敷。
34.如权利要求29所述的方法,其中在45-52℃或者63-68℃进行所述涂敷。
35.如权利要求29所述的方法,其中施加所述涂敷4到12分钟。
36.如权利要求29所述的方法,还包括:当所述半导体封装暴露于污染物时,在所述涂敷之前,执行对所述半导体封装的至少一次清洁和至少一次清洗。
37.一种金属可焊性的保持方法,包括:
a.将半导体阵列加载到分割机器中,其中所述半导体阵列包括
多个半导体封装;以及
b.利用防锈溶液处理半导体封装,从而镀敷半导体连接体的所
有暴露表面。
38.如权利要求37所述的金属可焊性的保持方法,其中所述加载包括:将所述防锈溶液与切削液混合以形成合剂。
39.如权利要求38所述的金属可焊性的保持方法,其中在切割期间将合剂喷涂到所述半导体阵列上时进行所述处理。
40.如权利要求37所述的金属可焊性的保持方法,其中所述处理包括:在分割之后,利用所述防锈溶液来喷涂所述半导体封装。
41.如权利要求37所述的金属可焊性的保持方法,其中所述处理包括:在分割之后,利用所述防锈溶液来浸渍所述半导体封装。
42.如权利要求37所述的金属可焊性的保持方法,其中所述防锈溶液是金属溶液。
43.如权利要求42所述的金属可焊性的保持方法,其中所述金属溶液是锡、银、金和镍金之一。
44.如权利要求37所述的金属可焊性的保持方法,其中在45-52℃或者63-68℃施加所述防锈溶液。
45.如权利要求37所述的金属可焊性的保持方法,其中施加所述防锈溶液4到12分钟。
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Also Published As
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CN101840900A (zh) | 2010-09-22 |
US8367476B2 (en) | 2013-02-05 |
US8431443B2 (en) | 2013-04-30 |
CN107256832A (zh) | 2017-10-17 |
CN101840846B (zh) | 2018-01-16 |
US20110232693A1 (en) | 2011-09-29 |
US20100233854A1 (en) | 2010-09-16 |
US20100230802A1 (en) | 2010-09-16 |
CN107256832B (zh) | 2020-06-26 |
US8569877B2 (en) | 2013-10-29 |
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