CN101826720B - Clamping absorption integrated circuit for two-stage matrix converter - Google Patents
Clamping absorption integrated circuit for two-stage matrix converter Download PDFInfo
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- CN101826720B CN101826720B CN2010101848185A CN201010184818A CN101826720B CN 101826720 B CN101826720 B CN 101826720B CN 2010101848185 A CN2010101848185 A CN 2010101848185A CN 201010184818 A CN201010184818 A CN 201010184818A CN 101826720 B CN101826720 B CN 101826720B
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Abstract
The invention provides a clamping absorption integrated circuit for a two-stage matrix converter, which is arranged between the P pole and the N pole of a rectification grade output direct-current bus. The circuit comprises a particular structure that: the positive pole of a diode D is connected with the P pole; an electrolytic capacitor Ce, a high-frequency capacitor C and a voltage bleeder circuit which formed by connecting R1 and R2 in series are connected in parallel between the negative pole of the diode D and the N pole of the rectification grade output direct-current bus; an input end of a hysteresis comparator is connected to a node connecting the R1 and R2, and the output end thereof is connected with the grid of IGBT through a drive resistor Rg; the grid of the IGBT is connected to the N pole through a pull-down resistor; the source of the IGBT is connected with the N pole; and the drain of the IGBT is connected with the negative pole of the diode D through a discharge power resistor RD. The circuit can effectively inhibit invert stage instant overvoltage, can protect overvoltage of the direct current bus, and has the advantages of simple and compact structure and low power consumption and cost.
Description
Technical field
The invention belongs to electric and electronic technical field, relate to a kind of clamping absorption integrated circuit for two-stage matrix converter.
Technical background
Functions such as dual stage matrix converter can realize that energy two-way circulates, sinusoidal input and output electric current, input power factor are controlled, and have compact conformation, advantage such as change of current complexity is low and switching loss is few, be green converter plant with wide application prospect.Dual stage matrix converter is made up of current mode rectification stage and voltage-type inverse cascade two parts, because the uniqueness of dual stage matrix converter topological structure, the clamp absorption circuit that is used for conventional voltage source inverter is no longer suitable at dual stage matrix converter.Therefore, be necessary that the clamp that is suitable for dual stage matrix converter to the development of dual stage matrix converter operation characteristic absorbs circuit, for the dual stage matrix converter commercial Application lays the foundation.
Summary of the invention
The objective of the invention is to propose a kind of clamping absorption integrated circuit for two-stage matrix converter, this circuit can effectively suppress the instantaneous overvoltage of inverse cascade, and can play a protective role to the dc bus overvoltage, and simultaneously simple and compact for structure, power consumption and cost are low.
Technical solution of the present invention is following:
A kind of clamping absorption integrated circuit for two-stage matrix converter; It is characterized in that; The clamping absorption integrated circuit of this dual stage matrix converter is arranged between the P utmost point and the N utmost point of output dc bus of rectification stage; Concrete structure is: the positive pole of diode D connects the P level, between the N utmost point of the output dc bus of the negative pole of diode D and rectification stage, is parallel with electrochemical capacitor C
e, high frequency capacitance C and the voltage dividing potential drop branch road that forms by R1 and R2 serial connection; The node that the input termination R1 of hysteresis comparator links to each other with R2, the output of hysteresis comparator is received the grid of IGBT through driving resistor Rg, and the grid of IGBT connects the N utmost point through pull down resistor R3, and the source electrode of IGBT connects the N utmost point, and the drain electrode of IGBT is through the discharge power resistance R
DJoin with the negative pole of diode D.
Clamping absorption integrated circuit for two-stage matrix converter according to claim 1 is characterized in that, the first threshold of described hysteresis comparator is 590V, and second threshold value is 648V.
The present invention mainly comprises three aspects:
(1) proposes the centralized absorption circuit of a kind of inverse cascade, avoided the instantaneous overvoltage and the mitigation system electromagnetic interference problem of system power device;
(2) propose a kind of dc bus overvoltage crowbar, solved that the inductive load that is driven is shut down and busbar voltage overpressure problems that line voltage causes when unusual;
(3) clamp that the present invention relates to dual stage matrix converter absorbs the circuit integrating method for designing, has realized clamp and has absorbed circuit integrating, has reduced the complexity and the cost of system, has improved the reliability of system.
The centralized absorption circuit of inverse cascade of the present invention utilizes the high frequency characteristics of noninductive electric capacity, concentrates the instantaneous high pressure of absorption system, has protected power device to avoid instantaneous overvoltage and has damaged.
Dc bus overvoltage crowbar of the present invention, the busbar voltage during according to the withstand voltage of power device and dual stage matrix converter operate as normal is provided with appropriate threshold voltage and goes to trigger the bleed-off circuit conducting, makes DC bus-bar voltage be in safe range.
The centralized clamping absorption integrated method for designing of dual stage matrix converter of the present invention; Uniqueness to dual stage matrix converter; Pass through unique design; Clamp is integrated with absorbing circuit, reduced the volume and the cost of system, improved the reliability of dual stage matrix converter work.
Beneficial effect:
The ingenious conventional clamp circuit by dual stage matrix converter of the present invention utilizes high frequency capacitance and release loop to form the clamping absorption integrated circuit that is used for dual stage matrix converter.It is simple that this circuit has a compact conformation, instantaneous voltage spike absorbability strong with the perfect advantage of overvoltage protection, solved the clamp absorption circuit design difficult problem in the middle of the dual stage matrix converter well.Advantage of the present invention is embodied in the following aspects:
1, circuit structure compact is easy to realize;
2, the clamp absorbability is strong: utilize high frequency capacitance to absorb the instantaneous voltage spike, utilize the release loop that DC bus-bar voltage is clamped within the safe range;
3, system bulk is effectively reduced with becoming instinct: absorb topologys such as circuit than traditional RC, the present invention only needs on the clamp circuit basis of dual stage matrix converter, to increase a high frequency capacitance and discharge the loop, thereby has reduced hardware volume and cost;
4, the present invention can improve the reliability of dual stage matrix converter: after the present invention is applied to dual stage matrix converter, can effectively prevents vital power device in the overvoltage damage converter, thereby improve the whole system reliability of operation.
Description of drawings
Fig. 1 is the dual stage matrix converter topological structure that centralized clamping absorption integrated circuit has been installed;
Fig. 2 is a dual stage matrix converter DC bus-bar voltage waveform;
Fig. 3 is that inverter electric capacity absorbs circuit;
Fig. 4 is the centralized clamping absorption integrated circuit of dual stage matrix converter;
Label declaration: 1-input filter, 2-dual stage matrix converter rectification stage, 3-clamp circuit, 4-dual stage matrix converter inverse cascade, 5-load, 6-clamping absorption integrated circuit for two-stage matrix converter.
Embodiment
Below combination figure and practical implementation process are explained further details to the present invention.
Embodiment 1:
Fig. 1 is the topological structure of dual stage matrix converter, and it is by input filter
1, the dual stage matrix converter rectification stage
2, clamp circuit
3, the dual stage matrix converter inverse cascade
4, load
5And clamping absorption integrated circuit for two-stage matrix converter
6Form.The current mode rectification stage directly is connected with the voltage-type inverse cascade.
In order to make three-phase input current sine and input reach unity power factor, need to adopt following modulator approach calculate the rectification stage duty ratio:
The duty ratio of dual stage matrix converter rectification stage does
d
1=sin(kπ/3-θ-π/6) (1)
d
2=cos(θ-kπ/3) (2)
In the formula, the k value is the sector number at current reference vector place, and θ is the absolute phase angle of current reference vector, d
1Be the duty ratio of k non-zero vector, d
2It is the duty ratio of k+1 non-zero vector.Because rectification stage does not have zero vector, therefore also need formula (1) and (2) are carried out the normalization processing:
d′
1=d
1/(d
1+d
2) (3)
d′
2=d
2/(d
1+d
2) (4)
D '
1With d '
2For two sections duty ratios of a switch periods of rectification stage, promptly at d '
1Utilize first input line voltage in time, d '
2Utilize second input line voltage in time, this shows the DC bus-bar voltage u of dual stage matrix converter
DcBeing synthetic by two different input line voltages in a switch periods, is the direct voltage that becomes pulsation for the moment, and the amplitude range that can calculate DC bus-bar voltage according to modulation principle is 0.5u
Lp~u
Lp, u
LpPeak value for input line voltage.The DC bus-bar voltage of dual stage matrix converter is as shown in Figure 2, and is very big by the instantaneous pulsation of the visible DC bus-bar voltage of Fig. 2.
Fig. 3 is that traditional voltage type inverter condenser type is concentrated the absorption circuit topological structure.The electric capacity two ends are connected respectively to the P utmost point and the N utmost point of dc bus.In the time of in the middle of this absorption circuit is used for voltage source inverter, because the DC bus-bar voltage of common electrical die mould inverter is generally level and smooth steady state value, therefore absorb the only energy storage of absorption circuit stray inductance of electric capacity, the value that absorbs electric capacity c is undertaken by following formula:
L is total stray inductance in loop, i
DcBe the dc bus maximum current.Electric current through electric capacity does
Δ u=u
m-u
Dc, c is for absorbing electric capacity, u
mBe maximum voltage on the bus, confirm u by the maximum permissible voltage of power device
DcConstant voltage during for the dc bus operate as normal.If this is absorbed circuit application in dual stage matrix converter, can know that by preceding surface analysis the DC bus-bar voltage of dual stage matrix converter is that an amplitude is at 0.5u
Lp~u
LpThe pulsating direct current that changes is still pressed formula (5) if absorb the value of electric capacity, on dc bus in the dual stage matrix converter
Very big; Thereby the electric current on the absorption electric capacity is also very big; And since dual stage matrix converter less than the big electric capacity of intermediate energy storage; Big electric current on the absorption electric capacity must flow through the rectification stage power switch of dual stage matrix converter, and so big electric current is very big threat, particularly power switch to absorbing electric capacity and power switch.Adopt the absorption circuit topology such as the RC of other form also to have the contradiction between impulse current and the power consumption, the switching frequency of converter is high more, and the problems referred to above are severe further, and the design difficulty of dual stage matrix converter clamp absorption circuit promptly herein.
The present invention relates to the clamping absorption integrated circuit of dual stage matrix converter, circuit topology is seen Fig. 4.It is by diode D, electrochemical capacitor C
e, high frequency capacitance C, voltage potential-divider network R1 and R2, hysteresis comparator, driving resistor Rg, grid pull down resistor R3, discharge power resistance R
DForm with discharge IGBT T.Voltage potential-divider network R1 and R2 play the effect of sampling DC bus-bar voltage, and driving resistor Rg plays a part to drive discharge IGBT T, and grid pull down resistor R3 works to prevent that discharge IGBT T from misleading.Diode D and electrochemical capacitor C
eBe the general clamp circuit of dual stage matrix converter, the energy storage of memory load leakage inductance when it is mainly used in system closedown is in case DC bus-bar voltage pump liter threatens power device, C during operate as normal
eVoltage is charged to u
LpEach parameter is respectively among Fig. 4: C is 0.22uf/1200V, C
eBe 11.75uf/1000V, R1 is 390k ohm/2W, and R2 is 3.4k ohm/2W, and Rg is 10 ohm/2W, and R3 is 10k ohm/0.25W, R
DBe 27 ohm/5W, IGBT T selects 1200V/60A.
The clamping absorption integrated circuit of dual stage matrix converter is arranged between the P utmost point and the N utmost point of output dc bus of rectification stage; Concrete structure is: the positive pole of diode D connects the P level, between the N utmost point of the output dc bus of the negative pole of diode D and rectification stage, is parallel with electrochemical capacitor C
e, high frequency capacitance C and the voltage dividing potential drop branch road that forms by R1 and R2 serial connection; The input termination R1 of hysteresis comparator and the node that R2 joins, the output of hysteresis comparator is received the grid of IGBT through driving resistor Rg, and the grid of IGBT connects the N utmost point through pull down resistor R3, and the source electrode of IGBT connects the N utmost point, and the drain electrode of IGBT is through the discharge power resistance R
DJoin with the negative pole of diode D.
The principle of this invention is: at electrochemical capacitor C
eGo up the high frequency capacitance C of parallelly connected suitable capacity,, absorb the instantaneous voltage spike on the dc bus, the protection power device in conjunction with the unidirectional conduction of diode D.Because (amplitude is u to the voltage during operate as normal on the noninductive capacitor C more than or equal to direct voltage
Lp); Though it is very fast that busbar voltage changes; But the voltage of the fast change that modulation algorithm causes does not have influence to absorbing electric capacity, thus there is not transient high-current through noninductive capacitor C, so its working condition is similar to the concentrated circuit that absorbs of condenser type in the aforesaid common electrical die mould inverter; The only energy storage of absorption circuit stray inductance, this is the centralized instantaneous overvoltage absorption of the inverse cascade aspect that relates among the present invention.
The operation principle of the dc bus overvoltage crowbar that the present invention relates to is: the normal operating voltage of initialization system zone is 1.1 times~1.3 times the maximum bus instantaneous voltage of theory (not considering the influence of stray inductance).Detect to absorb the voltage at electric capacity two ends through the voltage potential-divider network, compare than two threshold voltages with the stagnant chain rate that sets in advance and (only used a sign symbol u for threshold voltage for simplicity among Fig. 4
Ref, first threshold is 590V in the reality, second threshold value is 648V.If DC bus-bar voltage is in normal range (NR), hysteresis comparator is output as low level, not conducting of discharge IGBT T; DC bus-bar voltage exceeds going up in limited time of normal working voltage, and hysteresis comparator output high level triggers discharge IGBT T conducting, the discharge power resistance R
DThe energy of forming with discharge IGBT T discharges the loop and discharges unnecessary energy, is lower than the lower limit of normal working voltage up to voltage, closes energy release circuit.The introducing of stagnant ring mechanism, one side has reduced the power consumption of system, has reduced the switching frequency that discharges circuit I GBT on the other hand.
Claims (2)
1. clamping absorption integrated circuit for two-stage matrix converter; It is characterized in that; The clamping absorption integrated circuit of this dual stage matrix converter is arranged between the P utmost point and the N utmost point of output dc bus of rectification stage; Concrete structure is: the positive pole of diode D connects the P level, between the N utmost point of the output dc bus of the negative pole of diode D and rectification stage, is parallel with electrochemical capacitor C
e, high frequency capacitance C and the voltage dividing potential drop branch road that forms by resistance R 1 and resistance R 2 serial connections; The node that the input connecting resistance R1 of hysteresis comparator links to each other with resistance R 2; The output of hysteresis comparator is received the grid of IGBT through driving resistor Rg; The grid of IGBT connects the N utmost point through pull down resistor R3, and the source electrode of IGBT connects the N utmost point, and the drain electrode of IGBT is through the discharge power resistance R
DJoin with the negative pole of diode D.
2. clamping absorption integrated circuit for two-stage matrix converter according to claim 1 is characterized in that, the first threshold of described hysteresis comparator is 590V, and second threshold value is 648V.
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CN102136723A (en) * | 2011-04-20 | 2011-07-27 | 南通三九焊接机器制造有限公司 | Secondary inversion peak absorption circuit |
CN102545194B (en) * | 2012-02-21 | 2014-07-23 | 浙江昱能科技有限公司 | Protection circuit and protection method of power frequency full-bridge circuit of grid-connected photovoltaic inverter |
CN103538481B (en) * | 2012-07-12 | 2015-11-18 | 北汽福田汽车股份有限公司 | The control system of electronlmobil and brake protection device |
CN103427666B (en) * | 2013-07-23 | 2015-12-23 | 南京航空航天大学 | A kind of carrier modulating method of dual stage matrix converter |
CN104319877B (en) * | 2014-09-25 | 2018-08-31 | 广东易事特电源股份有限公司 | Asynchronous quick micro-capacitance sensor Intelligent gateway system and control method |
CN104578725B (en) * | 2014-12-29 | 2017-06-13 | 南京航空航天大学 | The dual-level matrix frequency converter topological structure of exportable alternating voltage and DC voltage |
CN104883071B (en) * | 2015-05-22 | 2017-07-28 | 中南大学 | A kind of same phase towards multimode matrix converter is laminated carrier modulating method |
CZ307590B6 (en) * | 2017-10-30 | 2018-12-27 | František ŽÁK | Method and connection for limiting the magnitude of the voltage between the node and ground in the AC power grid |
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