CN101826648B - Waveguide-based power combiner - Google Patents
Waveguide-based power combiner Download PDFInfo
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- CN101826648B CN101826648B CN 200910078862 CN200910078862A CN101826648B CN 101826648 B CN101826648 B CN 101826648B CN 200910078862 CN200910078862 CN 200910078862 CN 200910078862 A CN200910078862 A CN 200910078862A CN 101826648 B CN101826648 B CN 101826648B
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Abstract
The invention discloses a waveguide-based power combiner which adopts an upper-lower double-layer structure and comprises two 3dB rectangular waveguide power dividing/power combining modules, four power amplification modules and eight microstrip probes, wherein the two 3dB rectangular waveguide power dividing/power combining modules are bilaterally symmetrical, the four power amplification modules are positioned on a symmetrical plane of the two 3dB rectangular waveguide power dividing/power combining modules and are symmetrically distributed about the center of the symmetrical plane of the two 3dB rectangular waveguide power dividing/power combining modules, two ends of each power amplification module are respectively connected with one microstrip probe, and the other end of each microstrip probe is inserted into the 3dB rectangular waveguide power dividing/power combining module to be coupled with the 3dB rectangular waveguide power dividing/power combining modules. The power synthesizer has the characteristics of large bandwidth, extremely low loss and good heat dissipation, thereby realizing high-power and high-efficiency microwave power synthesis.
Description
Technical field
The present invention relates to microwave technical field, particularly relate to a kind of microwave power synthesizer that is applied to low-loss power based on waveguide.
Background technology
In microwave technical field, microwave power amplifier is an indispensable part, and the most important index of microwave power amplifier then is power output, efficient and gain.In recent years solid state microwave power device development is swift and violent, substituted gradually the in the past travelling-wave tube amplifier of heaviness, wherein the semiconductor solid-state microwave device has little, lightweight, the stable high of volume, it is relatively low that yet the disadvantage of solid state microwave power device is power output, in order to obtain HIGH-POWERED MICROWAVES, often need the mode that adopts power synthetic.
Power synthesis network has a variety of, and main Wilkinson power divider take planar circuit, Langer coupler etc. are as main, and waveguide power synthesizes usually employing E-plane branch or H face splitter, and the synthetic mode of spatial power develops rapidly in recent years.The merit of planar circuit divides/and to close the device advantage be that volume is little to merit, and cost is low, but loss is relatively large.Power combiner characteristics based on waveguide are that loss is minimum, but volume is often larger.In addition, common waveguide E face or H face splitter, bandwidth is often limited larger, usually can only reach 10%～20% of centre frequency, and range of application is limited.
The planar circuit microwave power is synthetic to also have some other shortcoming, because the substrate of planar circuit finally always will be installed in the cavity of a specific size, because cavity is often larger, the pattern that inspires easily other at discontinuous place causes the gain unevenness or disturbs other circuit, in order to reduce this effect, often need in cavity, add absorbing material, thereby further strengthen insertion loss.And the power capacity of planar circuit also will be much smaller than waveguiding structure.
Secondly, high-power power amplifier also faces the problem of heat radiation.Because solid state microwave power device efficient is usually between 20%～30%, the heat that amplifier produces can make the power device temperature rise too high, thereby affect device performance, to cause that device burns when serious, because different materials has the different coefficients of expansion, so excess Temperature also can affect the reliability that microwave power device is installed.
For better heat radiation, power combiner often adopts all-metal construction, power device and heat sink between distance more short better, generally adopt the high metallic copper of thermal conductivity or aluminium as carrier.
Summary of the invention
The technical problem that (one) will solve
The object of the invention is to overcome in the past waveguide power division/synthesizer Bandwidth-Constrained, bulky shortcoming, a kind of power combiner based on waveguide is provided, this power combiner adopts the waveguiding structure of different in width, to avoid common E-plane branch device 1/4 λ compatible portion, in the waveguide power division, also with the 3dB power division of microstrip probe form/synthetic combining, realize that in less volume four tunnel waveguide power are synthetic.
(2) technical scheme
For achieving the above object, the invention provides a kind of power combiner based on waveguide, this power combiner adopts the Dual-layer structure, divided/the merit compound module by two 3dB rectangular waveguide merits, four power amplifier modules and eight microstrip probes consist of, wherein, two 3dB rectangular waveguide merits are divided/merit compound module left-right symmetric, four power amplifier modules are positioned at two 3dB rectangular waveguide merits and divide/symmetrical plane of merit compound module on, and these four power amplifier modules about two 3dB rectangular waveguide merits divide/Central Symmetry of merit compound module symmetrical plane distributes, the two ends of each power amplifier module connect respectively a microstrip probe, and the other end of microstrip probe inserts 3dB rectangular waveguide merit and divides/the merit compound module divides with 3dB rectangular waveguide merit/and the merit compound module is coupled.
In the such scheme, described each 3dB rectangular waveguide merit divides/and the merit compound module is made of a Waveguide branching device and two Waveguide branchings, be used for to realize the distribution of 3dB power with synthetic, and 3dB rectangular waveguide merit divide/merit compound module, Waveguide branching device and Waveguide branching be up and down that two parts consist of jointly.
In the such scheme, described two 3dB rectangular waveguide merits divide/and the merit compound module is divided into up and down two-layer being installed between eight microstrip probes, two-layer symmetrical installation the up and down.
In the such scheme, described 3dB rectangular waveguide merit divides/and the merit compound module is mmic chip, or interior mesh power pipe.
In the such scheme, described Waveguide branching is E-plane branch, and the width of Waveguide branching is 1/2 of main duct width.
In the such scheme, described main duct width is 7.9mm, and the width of Waveguide branching is 3.95mm.
In the such scheme, described microstrip probe is inserted by the sidewall of Waveguide branching, and each Waveguide branching is inserted into two microstrip probes, and the microstrip probe plane parallel is in the narrow limit of Waveguide branching, in order to coupling microwave energy, opposite side connects power amplifier module to microstrip probe one side in Waveguide branching.
In the such scheme, the annexation between described microstrip probe and the Waveguide branching is about the power amplifier module left-right symmetric, and four power amplifier modules are divided into up and down two-layer being installed between eight microstrip probes.
In the such scheme, the distance of described microstrip probe and waveguide short face is 0.6～0.8 times of working frequency range centre frequency 1/4 wavelength, and the distance that microstrip probe gos deep into waveguide is 0.7～0.9 times of Waveguide branching width.
In the such scheme, during this power combiner work, microwave signal is divided/input of merit compound module by a 3dB rectangular waveguide merit, be divided into two-way via a Waveguide branching device and transfer to respectively two Waveguide branchings, two Waveguide branchings respectively are coupled to two microstrip probes with microwave signal, four microstrip probes connect respectively four power amplifier modules, after via power amplifier module microwave power being amplified, again microwave signal is transferred to four microstrip probes of opposite side, then via microstrip probe microwave signal is coupled to two Waveguide branchings, two Waveguide branchings transfer to microwave signal a Waveguide branching device again, export another 3dB rectangular waveguide merit to after the Waveguide branching device is synthetic with microwave signal to divide/the waveguide mouth of merit compound module.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, this power combiner based on waveguide provided by the invention, it is extremely low to have an insertion loss, and the Ku wave band is less than 0.1dB, and the Waveguide branching device that volume is more general is little.
2, this power combiner based on waveguide provided by the invention has the characteristic in broadband, and bandwidth equals the intrinsic bandwidth of waveguide itself.
3, this power combiner based on waveguide provided by the invention, the microstrip probe power division has the characteristic of high bandwidth, thus so that whole power combiner has broadband character.
4, this power combiner based on waveguide provided by the invention, its mounting means are fit to heat radiation and processing and fabricating, and bilevel heat respectively by two carrier conduction up and down out.
5, this power combiner based on waveguide provided by the invention, have with roomy characteristics, wherein merit divide/bandwidth of merit compound module part only depends on the bandwidth of waveguide itself, as using at the Ku wave band, then bandwidth is the idiozona wide region of Ku wave band rectangular waveguide, this power combiner has also that loss is extremely low, the characteristics of good heat dissipation, thereby realizes that high power, high efficiency microwave power are synthetic.
Description of drawings
Fig. 1 is the structural representation of the power combiner based on waveguide provided by the invention;
Fig. 2 is the isoboles based on waveguide splitter in the power combiner of waveguide provided by the invention;
Fig. 3 is the equivalent circuit diagram based on waveguide splitter in the power combiner of waveguide provided by the invention;
Fig. 4 is the schematic diagram based on microstrip probe coupling in the power combiner of waveguide provided by the invention;
Fig. 5 is power combiner reflection coefficient and the insertion loss test result when passive based on waveguide provided by the invention;
Fig. 6 is that (1～4) merit is divided/electromagnetic-field simulation result that merit is closed in the power combiner based on waveguide provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structural representation of the power combiner based on waveguide provided by the invention, this power combiner adopts the Dual-layer structure, divided/the merit compound module by two 3dB rectangular waveguide merits, four power amplifier modules and eight microstrip probes consist of, wherein, two 3dB rectangular waveguide merits are divided/merit compound module left-right symmetric, four power amplifier modules are positioned at two 3dB rectangular waveguide merits and divide/symmetrical plane of merit compound module on, and these four power amplifier modules about two 3dB rectangular waveguide merits divide/Central Symmetry of merit compound module symmetrical plane distributes, the two ends of each power amplifier module connect respectively a microstrip probe, and the other end of microstrip probe inserts 3dB rectangular waveguide merit and divides/the merit compound module divides with 3dB rectangular waveguide merit/and the merit compound module is coupled.
Microstrip probe and power amplifier module are divided into two-layer up and down, and full symmetric is not only compact, and can process very easily realization, and because upper and lower surface all is metal, the heat that power device produces is interior loose to amplifier housing in very short distance, thereby has good heat dispersion.
During work, microwave is first by main waveguide mouth input, then be divided into two-way through the Waveguide branching device, each road is divided into two-way by two-layer probe up and down again, is synthesized to main waveguide output by same microstrip probe, Waveguide branching device power again after amplifying by power amplifying device.
Fig. 2 shows the isoboles based on waveguide splitter in the power combiner of waveguide provided by the invention.The actual stack that can equivalence becomes two narrow waveguide 90 degree turnings of this Waveguide branching device, its bandwidth is decided by the waveguide turning, and the waveguide bandwidth at 90 degree turnings almost is unrestricted, often can in the bandwidth of waveguide itself, reach-standing wave below the 30dB, so this Waveguide branching device bandwidth is just covered whole waveguide place frequency range.In order better to understand this splitter, its-the Lu equivalent circuit diagram as shown in Figure 3, establishing main waveguide impedance is Z0, then the impedance of branch-waveguide is Z0/2, this splitter directly obtains main waveguide impedance Z0 with two Z0/2 series connection, thereby has avoided 1/4 λ impedance matching.
Be divided into two-layer microstrip probe and be equivalent to again 3dB power division/synthetic, thereby realize 4 tunnel power division/synthetic.The distance of microwave probe and waveguide short face is 0.6～0.8 times of working frequency range centre frequency 1/4 wavelength rather than just equals 1/4 wavelength, also is in order to improve the bandwidth of microstrip probe coupling.Because the waveguide internal schema is very complicated, be difficult to use the formula quantificational expression, but actual result is to get probe and short circuit identity distance near 0.6～0.8 times of 1/4 wavelength, and probe gos deep into length when getting 0.7～0.9 times of width of Waveguide branching, it is larger that the impedance of probe is equivalent to one section impedance of Z0 (characteristic impedance of supposing little band is Z0) series connection approximately, length is the transmission line of negative, just can offset with the suitable high resistant matched line of a segment length, as shown in Figure 4, impedance and frequency relation after the coupling are little, thereby reach larger bandwidth.
Refer again to Fig. 1, the power combiner based on waveguide provided by the invention comprises that two 3dB rectangular waveguide merits divide/merit compound module (1), four power amplifier modules (2) and eight microstrip probes (3).Wherein, 3dB rectangular waveguide merit divide/merit compound module (1), Waveguide branching device (4) and Waveguide branching (5) be up and down that two parts consist of jointly.3dB rectangular waveguide merit divides/and merit compound module (1) is comprised of a Waveguide branching device (4) and two Waveguide branchings (5), realized that the 3dB power division is with synthetic, two Waveguide branchings (5) are E-plane branch, and the width of Waveguide branching is 1/2 of main duct width.Main duct width is 7.9mm, and the width of branch is 3.95mm.
Insert on the sidewall of microstrip probe (3) by Waveguide branching (5), each Waveguide branching (5) inserts two microstrip probes (3), the microstrip probe plane parallel is in the narrow limit of Waveguide branching (5), microstrip probe (3) one sides in Waveguide branching (5) in order to coupling microwave energy, opposite side connects power amplifier module (2), and microstrip probe (3) and the annexation between the Waveguide branching (5) of power amplifier module (2) both sides are just the same.
Whole power combiner has four Waveguide branchings (5), these four Waveguide branchings (5) connect altogether eight microstrip probes (3), eight microstrip probes (3) are 4.8mm with the distance of waveguide short face, and microstrip probe (3) stretches into the long 3.2mm of being of part of waveguide.
Four power amplifier modules (2) are divided into up and down two-layer being installed between eight microstrip probes (3), and two-layer symmetrical 4 power amplifier modules installing are GaAs MMIC bare chip up and down.
Microstrip substrate thickness is 0.254mm, and matched line length is that 2.17mm is used for probe is impedance-matched to 50 ohm.
During whole power combiner work, microwave signal is divided/merit compound module (1) input by 1 3dB rectangular waveguide merit, be divided into two-way via a Waveguide branching device (4) and transfer to respectively two Waveguide branchings (5), each is coupled to two microstrip probes (3) with microwave signal two Waveguide branchings (5), four microstrip probes (3) connect respectively four power amplifier modules (2), after via power amplifier module (2) microwave power being amplified, again microwave signal is transferred to four microstrip probes (3) of opposite side, then via microstrip probe microwave signal is coupled to two Waveguide branchings (5), two Waveguide branchings (5) transfer to microwave signal a Waveguide branching device (4) again, export 3dB rectangular waveguide merit to after Waveguide branching device (4) is synthetic with microwave signal to divide/the waveguide mouth of merit compound module (1).
Among Fig. 1, because up and down two parts just are rectangular waveguide after altogether, rectangular waveguide should be the closed cavity of rectangle, so two rectangular waveguide merits respectively comprising of two parts are divided/in fact just two of merit compound modules up and down.That is, 3dB rectangular waveguide merit divide/merit compound module (1), Waveguide branching device (4) and Waveguide branching (5) be up and down that two parts consist of jointly.
The described Ku wave band of this example power combiner non-source test result as shown in Figure 5, during test, the power amplification chip replaces with 50 ohm microstrip.
As seen from Figure 5, S11 in the whole Ku frequency range of 12～18GHz less than 15dB, S12 in 12～17GHz less than 0.3dB, because test is equivalent to the twice that power device directly arrives exit loss back-to-back, so the loss of estimating power device should be less than 0.15dB, combined coefficient does not almost have loss up to 97%.
Because the merit of 1-4 divides/merit closes passive module and can't test separately, can only provide the electromagnetic-field simulation result, as shown in Figure 6, wherein the P1 port is the waveguide mouth, P2～P5 is that probe matching is to the microstrip line port in 50 Europe, can see S12, S13, S14, S15 all-6dB～-6.1dB between, S11 in full frequency band less than-16dB.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. power combiner based on waveguide, it is characterized in that, this power combiner adopts the Dual-layer structure, divided/the merit compound module by two 3dB rectangular waveguide merits, four power amplifier modules and eight microstrip probes consist of, wherein, two 3dB rectangular waveguide merits are divided/merit compound module left-right symmetric, four power amplifier modules are positioned at two 3dB rectangular waveguide merits and divide/symmetrical plane of merit compound module on, and these four power amplifier modules about two 3dB rectangular waveguide merits divide/Central Symmetry of merit compound module symmetrical plane distributes, the two ends of each power amplifier module connect respectively a microstrip probe, and the other end of microstrip probe inserts 3dB rectangular waveguide merit and divides/the merit compound module divides with 3dB rectangular waveguide merit/and the merit compound module is coupled;
Wherein, described each 3dB rectangular waveguide merit divides/and the merit compound module is made of a Waveguide branching device and two Waveguide branchings, be used for to realize the distribution of 3dB power with synthetic, and 3dB rectangular waveguide merit divide/merit compound module, Waveguide branching device and Waveguide branching be up and down that two parts consist of jointly.
2. the power combiner based on waveguide according to claim 1 is characterized in that, described two 3dB rectangular waveguide merits divide/the merit compound module is divided into up and down two-layer being installed between eight microstrip probes, up and down two-layer symmetrical the installation.
3. the power combiner based on waveguide according to claim 1 is characterized in that, and described 3dB rectangular waveguide merit divides/and the merit compound module is mmic chip, or interior mesh power pipe.
4. the power combiner based on waveguide according to claim 1 is characterized in that, described Waveguide branching is E-plane branch, and the width of Waveguide branching is 1/2 of main duct width.
5. the power combiner based on waveguide according to claim 4 is characterized in that, described main duct width is 7.9mm, and the width of Waveguide branching is 3.95mm.
6. the power combiner based on waveguide according to claim 1, it is characterized in that, described microstrip probe is inserted by the sidewall of Waveguide branching, each Waveguide branching is inserted into two microstrip probes, the microstrip probe plane parallel is in the narrow limit of Waveguide branching, in order to coupling microwave energy, opposite side connects power amplifier module to microstrip probe one side in Waveguide branching.
7. the power combiner based on waveguide according to claim 1, it is characterized in that, annexation between described microstrip probe and the Waveguide branching is about the power amplifier module left-right symmetric, and four power amplifier modules are divided into up and down two-layer being installed between eight microstrip probes.
8. the power combiner based on waveguide according to claim 1, it is characterized in that, the distance of described microstrip probe and waveguide short face is 0.6～0.8 times of working frequency range centre frequency 1/4 wavelength, and the distance that microstrip probe gos deep into waveguide is 0.7～0.9 times of Waveguide branching width.
9. the power combiner based on waveguide according to claim 1, it is characterized in that, during this power combiner work, microwave signal is divided/input of merit compound module by a 3dB rectangular waveguide merit, be divided into two-way via a Waveguide branching device and transfer to respectively two Waveguide branchings, two Waveguide branchings respectively are coupled to two microstrip probes with microwave signal, four microstrip probes connect respectively four power amplifier modules, after via power amplifier module microwave power being amplified, again microwave signal is transferred to four microstrip probes of opposite side, then via microstrip probe microwave signal is coupled to two Waveguide branchings, two Waveguide branchings transfer to microwave signal a Waveguide branching device again, export another 3dB rectangular waveguide merit to after the Waveguide branching device is synthetic with microwave signal to divide/the waveguide mouth of merit compound module.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386471A (en) * | 2011-09-19 | 2012-03-21 | 杭州电子科技大学 | Double-layer multi-channel power synthesis amplifier based on rectangular waveguide |
| CN103247842B (en) * | 2013-05-20 | 2015-12-23 | 成都雷电微力科技有限公司 | Power combing module |
| CN104167585B (en) * | 2014-07-30 | 2015-07-01 | 西北核技术研究所 | Microwave power distributor, microwave power synthesizer and microwave power distribution synthesizer |
| CN105609489B (en) * | 2015-12-29 | 2019-06-18 | 中国工程物理研究院电子工程研究所 | The structure of modularized encapsulation is carried out to chip based on improved waveguide probe transition |
| CN106450635B (en) * | 2016-12-08 | 2021-10-01 | 江苏贝孚德通讯科技股份有限公司 | Integrated microwave waveguide coupler |
| CN109301419B (en) * | 2018-10-24 | 2020-11-27 | 北京无线电测量研究所 | Coplanar waveguide ultra-wideband sum-difference device |
| CN109786903B (en) * | 2019-03-29 | 2021-02-12 | 中国科学院微电子研究所 | Filter circuit and forming method thereof |
| CN110277623A (en) * | 2019-06-28 | 2019-09-24 | 中国航空工业集团公司雷华电子技术研究所 | A kind of high isolation power synthesizer |
| CN113258244B (en) * | 2021-04-30 | 2021-12-07 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Rectangular waveguide microstrip 0-degree-phase-difference high-isolation broadband power divider |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4590446A (en) * | 1984-06-28 | 1986-05-20 | Trw Inc. | Radial waveguide power divider/combiner |
| US4598254A (en) * | 1983-07-12 | 1986-07-01 | Fujitsu Limited | Microwave power distributing and synthesizing device and microwave power amplifying apparatus including the same |
| CN101242020A (en) * | 2008-02-29 | 2008-08-13 | 电子科技大学 | Mm wave 3dB power distribution/merging network |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4598254A (en) * | 1983-07-12 | 1986-07-01 | Fujitsu Limited | Microwave power distributing and synthesizing device and microwave power amplifying apparatus including the same |
| US4590446A (en) * | 1984-06-28 | 1986-05-20 | Trw Inc. | Radial waveguide power divider/combiner |
| CN101242020A (en) * | 2008-02-29 | 2008-08-13 | 电子科技大学 | Mm wave 3dB power distribution/merging network |
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