CN101826535A - 一种微机电器件与集成电路器件单片集成芯片 - Google Patents
一种微机电器件与集成电路器件单片集成芯片 Download PDFInfo
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- CN101826535A CN101826535A CN201010173572A CN201010173572A CN101826535A CN 101826535 A CN101826535 A CN 101826535A CN 201010173572 A CN201010173572 A CN 201010173572A CN 201010173572 A CN201010173572 A CN 201010173572A CN 101826535 A CN101826535 A CN 101826535A
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- integrated circuit
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- isolation channel
- electro mechanical
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
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- 238000005507 spraying Methods 0.000 description 5
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201010173572A CN101826535A (zh) | 2007-09-13 | 2007-09-13 | 一种微机电器件与集成电路器件单片集成芯片 |
Applications Claiming Priority (1)
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CN201010173572A CN101826535A (zh) | 2007-09-13 | 2007-09-13 | 一种微机电器件与集成电路器件单片集成芯片 |
Related Parent Applications (1)
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CN 200710045975 Division CN101388364B (zh) | 2007-09-13 | 2007-09-13 | 采用低温工艺形成电学隔离区方法及单片集成方法 |
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CN101826535A true CN101826535A (zh) | 2010-09-08 |
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CN201010173572A Pending CN101826535A (zh) | 2007-09-13 | 2007-09-13 | 一种微机电器件与集成电路器件单片集成芯片 |
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CN (1) | CN101826535A (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121552A (en) * | 1997-06-13 | 2000-09-19 | The Regents Of The University Of Caliofornia | Microfabricated high aspect ratio device with an electrical isolation trench |
CN1595633A (zh) * | 2004-06-29 | 2005-03-16 | 北京大学 | 一种将cmos电路与体硅mems单片集成的方法 |
-
2007
- 2007-09-13 CN CN201010173572A patent/CN101826535A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121552A (en) * | 1997-06-13 | 2000-09-19 | The Regents Of The University Of Caliofornia | Microfabricated high aspect ratio device with an electrical isolation trench |
CN1595633A (zh) * | 2004-06-29 | 2005-03-16 | 北京大学 | 一种将cmos电路与体硅mems单片集成的方法 |
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Owner name: SUZHOU MEMSENSING MICROSYSTEMS CO., LTD. Free format text: FORMER OWNER: LI GANG Effective date: 20101224 Free format text: FORMER OWNER: HU WEI |
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Free format text: CORRECT: ADDRESS; FROM: 215213 213B, BUILDING A2, BIOLOGY NANO PARK, NO.218, XINGHU STREET, SUZHOU INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE TO: 215123 213B, BUILDING A2, BIOLOGY NANO PARK, NO.218, XINGHU STREET, SUZHOU INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE |
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TA01 | Transfer of patent application right |
Effective date of registration: 20101224 Address after: Suzhou City, Jiangsu province 215123 Industrial Park Suzhou Xinghu street BioBAY No. 218 A2 213B Applicant after: Suzhou MEMSensing Microsystems Co., Ltd. Address before: Suzhou City, Jiangsu province 215213 Industrial Park Suzhou Xinghu street BioBAY No. 218 A2 213B Applicant before: Li Gang Co-applicant before: Hu Wei |
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Application publication date: 20100908 |