CN101819348A - Horizontal electric field mode color film substrate and manufacturing method thereof - Google Patents
Horizontal electric field mode color film substrate and manufacturing method thereof Download PDFInfo
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- CN101819348A CN101819348A CN200910078373A CN200910078373A CN101819348A CN 101819348 A CN101819348 A CN 101819348A CN 200910078373 A CN200910078373 A CN 200910078373A CN 200910078373 A CN200910078373 A CN 200910078373A CN 101819348 A CN101819348 A CN 101819348A
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Abstract
The invention relates to a horizontal electric field mode color film substrate and a manufacturing method thereof. The horizontal electric field mode color film substrate comprises a black matrix image, a color resin image, a protection layer and an oriented film which are formed on the substrate, and a conductive image for eliminating static electricity generated in an oriented film friction process is arranged between the substrate and the oriented film. The production method comprises the following steps: forming the black matrix image, the color resin image, the protection layer and the oriented film on the substrate; and forming the conductive image for eliminating the static electricity generated in the oriented film friction process between the substrate and the oriented film. The invention is provided with the conductor image for eliminating the static electricity generated in the oriented film friction process. Compared with the prior art, the invention effectively improves capacity of releasing static electricity of the conductor image, can completely eliminate frictional static electricity, increases homogeneity of friction process and improves contrast degree of a liquid crystal display, thereby improving yield rate of the liquid crystal display.
Description
Technical field
The present invention relates to a kind of LCD color membrane substrates and manufacture method thereof, particularly a kind of horizontal electric field mode color film substrate and manufacture method thereof.
Background technology
In recent years, LCD (LCD) production development is very swift and violent, and more and more high-quality LCD are gone on the market gradually.Along with constantly widening of liquid crystal display applications field, the particularly application of large scale liquid crystal TV requires LCD to have broad angular field of view.In order to expand the visual angle of LCD, prior art has proposed plurality of display modes, comprise that multidomain homeotropic alignment (MVA) pattern, the graphical homeotropic alignment of pixel electrode (PVA) pattern, plane drive (In-Plane Switching, be called for short IPS) pattern and (Fringe Field Switching the is called for short FFS) pattern etc. of utilizing the plane of fringing field to drive.Wherein, the mode that horizontal electric field mode drives by the employing fringe field has realized the display effect of wide viewing angle, becomes an important development direction in the wide viewing angle technology.Compare with the VA pattern, the horizontal electric field mode LCD has better visible angle, lower driving voltage, and therefore littler colour cast is used widely in fields such as high-end mobile phone screen, notebook computer screen, panel computer screen, TVs.
The horizontal electric field mode LCD comprises the array base palte of box and color membrane substrates is provided with liquid crystal therebetween.In horizontal electric field mode (as FFS pattern or the IPS pattern) LCD, the initial arrangement direction of liquid crystal is for being parallel to substrate surface, thus substrate surface need initial row that alignment film rubbing process realizes liquid crystal to.Because the color membrane substrates in the horizontal electric field mode LCD is not provided with the public electrode of conduction, therefore produce static and improve the static releasability of color membrane substrates in friction process in friction process for avoiding, prior art is provided with conductive layer at the back side of color membrane substrates usually.Because the thickness of substrate is 0.5mm～1mm, make the distance of the conductive layer that is arranged on the color membrane substrates back side and alignment films bigger, the actual use show, the color film substrate structure of prior art horizontal electric field mode can only release portion static, fails to eliminate fully frictional static.Residual static not only makes the homogeneity of friction process restive, reduces the contrast of LCD, and causes the yields of LCD to reduce, and has restricted the application of horizontal electric field mode LCD to a certain extent.
Summary of the invention
The purpose of this invention is to provide a kind of horizontal electric field mode color film substrate and manufacture method thereof, effectively solve the technological deficiency that existing level electric field patterns color film substrate structure can not be eliminated frictional static fully.
To achieve these goals; the invention provides a kind of horizontal electric field mode color film substrate; comprise the black matrix figure, color resin figure, protective seam and the alignment films that are formed on the substrate, also be provided with the conductive pattern that is used for eliminating alignment film rubbing process generation static between described substrate and the alignment films.
Described conductive pattern is arranged on described black matrix figure region.
Described conductive pattern can be arranged on the described protective seam.Further, the width of described conductive pattern is less than the width of black matrix figure.
Described conductive pattern also can be arranged between described substrate and the black matrix figure or on the described black matrix figure.Further, described conductive pattern and black matrix figure are forming with in a photoetching process.
On the technique scheme basis, described conductive pattern is structure as a whole.Described conductive pattern is connected with the public electrode of array base palte.
To achieve these goals; the present invention also provides a kind of horizontal electric field mode color film substrate manufacture method, forms also to be included in the step of deceiving matrix figure, color resin figure, protective seam and alignment films on substrate to be formed for eliminating the step that produces the conductive pattern of static in the alignment film rubbing process between described substrate and the alignment films.
Wherein, also being included in the step that is formed for eliminating the conductive pattern of generation static in the alignment film rubbing process between described substrate and the alignment films in the step of the black matrix figure of formation, color resin figure, protective seam and alignment films on substrate can comprise:
Described step 13 comprises: adopt the method deposit transparent conductive film of magnetron sputtering or thermal evaporation on the substrate of completing steps 12, apply photoresist on described transparent conductive film; Adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to the conductive pattern region, photoresist remove fully the zone corresponding to conductive pattern with exterior domain; After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change; Etch away the transparent conductive film that photoresist is removed the zone fully fully by etching technics, form conductive pattern after peeling off remaining photoresist, conductive pattern is positioned at black matrix figure region, and its width is less than the width of black matrix figure.
Wherein, also being included in the step that is formed for eliminating the conductive pattern of generation static in the alignment film rubbing process between described substrate and the alignment films in the step of the black matrix figure of formation, color resin figure, protective seam and alignment films on substrate also can comprise:
Described step 21 comprises: adopt the method for magnetron sputtering or thermal evaporation, deposit transparent conductive film on substrate, the black matrix material layer of coated with resins material then; Adopt the normal masks plate that described black matrix material layer is exposed, make black matrix material layer form complete reserve area and remove regional fully, reserve area is removed the zone corresponding to zone beyond the black matrix figure fully corresponding to black matrix figure region fully; After the development treatment, remove the black matrix material layer in zone fully and removed fully, the black matrix material layer of reserve area all keeps fully; Etch away the transparent conductive film of removing the zone fully fully by etching technics, form black matrix figure and conductive pattern, conductive pattern is between substrate and black matrix figure, and its width is identical with the width of black matrix figure.
Wherein, also being included in the step that is formed for eliminating the conductive pattern of generation static in the alignment film rubbing process between described substrate and the alignment films in the step of the black matrix figure of formation, color resin figure, protective seam and alignment films on substrate can also comprise:
Described step 31 comprises: adopt the method for magnetron sputtering or thermal evaporation, the black matrix material layer and the transparent conductive film of deposit metallic material successively on substrate apply photoresist on described transparent conductive film; Adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to conductive pattern and black matrix figure region, and photoresist is removed the zone fully corresponding to zone beyond conductive pattern and the black matrix figure; After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change; Etch away transparent conductive film and the black matrix material layer that photoresist is removed the zone fully fully by etching technics, form conductive pattern and black matrix figure after peeling off remaining photoresist, conductive pattern is positioned on the black matrix figure, and its width is identical with the width of black matrix figure.
The invention provides a kind of horizontal electric field mode color film substrate and manufacture method thereof, by between substrate and alignment films, being provided for eliminating the conductive pattern that produces static in the alignment film rubbing process, make the present invention effectively improve the static releasability of horizontal electric field mode color film substrate in friction process.The distance of conductive pattern of the present invention and alignment films shortens greatly, therefore the distance with the friction cloth of friction orientation film shortens greatly, compare with the prior art that conductive layer is set overleaf, the present invention has effectively improved the ability of conductive pattern release electrostatic, can realize eliminating fully frictional static, improve the homogeneity of friction process, improved the contrast of LCD, thereby improved the yields of LCD.Further, conductive pattern of the present invention also helps the image retention characteristic of improving LCD.In use,, make the residual DC voltage of LCD inner accumulation constantly to obtain discharging, therefore effectively improved the image retention characteristic of LCD by conductive pattern of the present invention by conductive pattern of the present invention is applied common electric voltage.The present invention is applicable to the LCD of horizontal component of electric field display modes such as FFS pattern, IPS pattern, has broad application prospects.
Description of drawings
Fig. 1 is the structural representation of horizontal electric field mode color film substrate first embodiment of the present invention;
Fig. 2 deceives the synoptic diagram behind the matrix figure for horizontal electric field mode color film substrate first embodiment of the present invention forms;
Fig. 3 is the synoptic diagram after horizontal electric field mode color film substrate first embodiment of the present invention forms the color resin figure;
Fig. 4 is the synoptic diagram after horizontal electric field mode color film substrate first embodiment of the present invention forms protective seam;
Fig. 5 is the synoptic diagram after horizontal electric field mode color film substrate first embodiment of the present invention forms conductive pattern;
Fig. 6 is the structural representation of horizontal electric field mode color film substrate second embodiment of the present invention;
Fig. 7 is the synoptic diagram after horizontal electric field mode color film substrate second embodiment of the present invention forms transparent conductive film and black matrix material layer;
Fig. 8 is the synoptic diagram of horizontal electric field mode color film substrate second embodiment of the present invention after to black matrix material layer exposure imaging;
Fig. 9 deceives the synoptic diagram behind matrix figure and the conductive pattern for horizontal electric field mode color film substrate second embodiment of the present invention forms;
Figure 10 is the synoptic diagram after horizontal electric field mode color film substrate second embodiment of the present invention forms the color resin figure;
Figure 11 is the process flow diagram of horizontal electric field mode color film substrate manufacture method first embodiment of the present invention;
Figure 12 is the process flow diagram of horizontal electric field mode color film substrate manufacture method second embodiment of the present invention;
Figure 13 is the process flow diagram of horizontal electric field mode color film substrate manufacture method the 3rd embodiment of the present invention.
Description of reference numerals:
The 10-substrate; 20-deceives the matrix figure; 30-color resin figure;
The 40-protective seam; The 50-alignment films; The 60-conductive pattern;
The 101-transparent conductive film; 102-deceives the matrix material layer.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the structural representation of horizontal electric field mode color film substrate first embodiment of the present invention.As shown in Figure 1, the present embodiment horizontal electric field mode color film substrate comprises substrate 10, black matrix figure 20, color resin figure 30, protective seam 40, alignment films 50 and conductive pattern 60, wherein, color resin figure 30 and black matrix figure 20 are formed on the substrate 10, color resin figure 30 comprises three kinds of colors: red resin figure, blue resins figure and green resin figure, the color resin figure 30 of three kinds of colors are formed between the black matrix figure 20 successively; Protective seam 40 is formed on black matrix figure 20 and the color resin figure 30 and covers whole base plate 10; Conductive pattern 60 is formed on the protective seam 40 and is positioned at black matrix figure 20 regions, is used for eliminating the static that alignment film rubbing process produces, and the width of conductive pattern 60 is less than the width of black matrix figure 20; Alignment films 50 is formed on the conductive pattern 60 and covers whole base plate 10.Further, in each pixel region, the present embodiment conductive pattern is a ring-type, and the conductive pattern 60 of all pixel regions is structure as a whole.This integrative-structure can be that the conductive pattern of each pixel region and the conductive pattern 60 of all adjacent pixel regions interconnect, the conductive pattern that also can be each pixel region capable (or row) interconnects, form several conductive patterns capable (or conductive pattern row), in the neighboring area, several conductive patterns capable (or conductive pattern row) interconnect by connecting line.
Further specify the technical scheme of present embodiment below by the preparation process of present embodiment horizontal electric field mode color film substrate.
Fig. 2 deceives the synoptic diagram behind the matrix figure for horizontal electric field mode color film substrate first embodiment of the present invention forms.At first apply the black matrix material layer of one deck on substrate (as glass substrate or quartz base plate) 10, black matrix material layer can adopt the stronger resin of light-proofness, and as add black particle in resin, black particle can be charcoal or TiO
2Oxide etc.Adopt the normal masks plate that black matrix material layer is exposed afterwards, make black matrix material layer form complete reserve area and remove regional fully, after the development treatment, the black matrix material layer of removing the zone is removed fully fully, the black matrix material layer of reserve area all keeps fully, form the black matrix figure of arranging with array way 20 after the baking processing, as shown in Figure 2.
Fig. 3 is the synoptic diagram after horizontal electric field mode color film substrate first embodiment of the present invention forms the color resin figure.On the substrate 10 of finishing above-mentioned figure, at first apply one deck red resin material layer, adopt the normal masks plate that the red resin material layer is exposed afterwards, make the red resin material layer form complete reserve area and remove the zone fully, after the development treatment, the red resin material layer of removing the zone is removed fully fully, and the red resin material layer of reserve area all keeps fully, forms the red resin figure after the baking processing.Adopt same procedure, form blue and green resin figure successively, and form color resin figure 30 by redness, blueness and green resin figure, color resin figure 30 is between adjacent black matrix figure 20, as shown in Figure 3.In fact, form three kinds of color resin figures and can adopt any order.
Fig. 4 is the synoptic diagram after horizontal electric field mode color film substrate first embodiment of the present invention forms protective seam.On the substrate 10 of finishing above-mentioned figure, apply layer protective layer, form the protective seam surface of surfacing, as shown in Figure 4.Protective seam can adopt third rare resinoid.
Fig. 5 is the synoptic diagram after horizontal electric field mode color film substrate first embodiment of the present invention forms conductive pattern.On the substrate 10 of finishing above-mentioned figure, at first adopt the method deposition layer of transparent conductive film of magnetron sputtering or thermal evaporation, transparent conductive film can adopt materials such as tin indium oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide, also can adopt other metal and metal oxide.On transparent conductive film, apply one deck photoresist then, adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to the conductive pattern region, photoresist remove fully the zone corresponding to conductive pattern with exterior domain.After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change.Etch away the transparent conductive film that photoresist is removed the zone fully fully by etching technics, form conductive pattern 60 after peeling off remaining photoresist, conductive pattern 60 is positioned at black matrix figure 20 regions, and its width is less than the width of black matrix figure 20, as shown in Figure 5.
At last, on the substrate 10 of finishing above-mentioned figure, apply alignment films 50, finish the preparation of present embodiment horizontal electric field mode color film substrate, as shown in Figure 1.
In the practical application, can adopt and form the flow process that color resin figure 30 backs form black matrix figure 20 earlier.In addition, can also comprise the flow process that forms column shaped spacer (PS) in the aforementioned techniques scheme, column shaped spacer is used to keep the distance between array base palte behind the box and the color membrane substrates, and the structure and the preparation process of column shaped spacer are well known to those skilled in the art, repeat no more here.
In addition, the present embodiment conductive pattern also helps the image retention characteristic of improving LCD.Connect by public electrode, can make the present embodiment conductive pattern when LCD is worked, have common electric voltage present embodiment conductive pattern and array base palte.Because the present embodiment conductive pattern is positioned at black matrix figure region, be that conductive pattern is positioned at outside the viewing area, therefore the conductive pattern that has common electric voltage can't influence the operate as normal of LCD, but the conductive pattern with common electric voltage can improve the electric field stability of LCD inside, the residual DC voltage of LCD inner accumulation can constantly obtain discharging by conductive pattern, has therefore effectively improved the image retention characteristic of LCD.In the practical application, because the neighboring area of array base palte is formed with array base palte PAD zone, the neighboring area of horizontal electric field mode color film substrate is formed with horizontal electric field mode color film substrate PAD zone, and the conductive pattern in the public electrode in array base palte PAD zone and horizontal electric field mode color film substrate PAD zone can be realized being electrically connected by the gold goal in the envelope frame glue.
Present embodiment provides a kind of horizontal electric field mode color film substrate, by between substrate and alignment films, being provided for eliminating the conductive pattern that produces static in the alignment film rubbing process, make present embodiment effectively improve the static releasability of horizontal electric field mode color film substrate in friction process.The distance of present embodiment conductive pattern and alignment films shortens greatly, therefore the distance with the friction cloth of friction orientation film shortens greatly, compare with the prior art that conductive layer is set overleaf, the present invention has effectively improved the ability of conductive pattern release electrostatic, can realize eliminating fully frictional static, improve the homogeneity of friction process, improved the contrast of LCD, thereby improved the yields of LCD.The present invention is applicable to the LCD of horizontal component of electric field display modes such as FFS pattern, IPS pattern, has broad application prospects.
Fig. 6 is the structural representation of horizontal electric field mode color film substrate second embodiment of the present invention.As shown in Figure 6; the agent structure of present embodiment horizontal electric field mode color film substrate and aforementioned first embodiment are basic identical; comprise substrate 10, black matrix figure 20, color resin figure 30, protective seam 40, alignment films 50 and conductive pattern 60; different with aforementioned first embodiment is; the conductive pattern 60 of present embodiment is formed between substrate 10 and the black matrix figure 20; its width is identical with the width of black matrix figure 20, and is forming with in a photoetching process.In addition, color resin figure 30 comprises three kinds of colors: red resin figure, blue resins figure and green resin figure, the color resin figure 30 of three kinds of colors are formed between the black matrix figure 20 successively; Protective seam 40 is formed on color resin figure 30 and the black matrix figure 20 and covers whole base plate 10; Alignment films 50 is formed on the protective seam 40.
Fig. 7～Fig. 9 forms the synoptic diagram of deceiving matrix figure and conductive pattern for horizontal electric field mode color film substrate second embodiment of the present invention.Fig. 7 is the synoptic diagram after horizontal electric field mode color film substrate second embodiment of the present invention forms transparent conductive film and black matrix material layer.At first adopt the method for magnetron sputtering or thermal evaporation, deposition layer of transparent conductive film 101 on substrate (as glass substrate or quartz base plate) 10 applies the black matrix material layer 102 of one deck, as shown in Figure 7 then.Transparent conductive film 101 can adopt materials such as tin indium oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide, also can adopt other metal and metal oxide, and black matrix material layer 102 can adopt the stronger resin of light-proofness.Fig. 8 is the synoptic diagram of horizontal electric field mode color film substrate second embodiment of the present invention after to black matrix material layer exposure imaging.Adopt the normal masks plate that black matrix material layer 102 is exposed, make black matrix material layer 102 form complete reserve area A and remove area B fully, after the development treatment, the black matrix material layer 102 of removing area B fully is removed, the black matrix material layer 102 of reserve area A all keeps fully, as shown in Figure 8.Fig. 9 deceives the synoptic diagram behind matrix figure and the conductive pattern for horizontal electric field mode color film substrate second embodiment of the present invention forms.Etch away the transparent conductive film of removing area B fully fully by etching technics, form black matrix figure 20 and conductive pattern 60, conductive pattern 60 is between substrate 10 and black matrix figure 20, and its width is identical with the width of black matrix figure 20, as shown in Figure 9.Figure 10 is the synoptic diagram after horizontal electric field mode color film substrate second embodiment of the present invention forms the color resin figure.On the substrate 10 of finishing above-mentioned figure, at first apply one deck blue resins material layer, adopt the normal masks plate that the blue resins material layer is exposed afterwards, make the blue resins material layer form complete reserve area and remove the zone fully, after the development treatment, the blue resins material layer of removing the zone is removed fully fully, and the blue resins material layer of reserve area all keeps fully, forms the blue resins figure after the baking processing.Adopt identical method, form red resin figure and green resin figure successively, and form color resin figure 30 by red resin figure, blue resins figure and green resin figure, color resin figure 30 is between adjacent black matrix figure 20, as shown in figure 10.In the practical application, the resin figure that forms three kinds of colors can adopt any order.At last, on the substrate 10 of finishing above-mentioned figure, armor coated successively 40 and alignment films 50, finish the preparation of present embodiment horizontal electric field mode color film substrate, as shown in Figure 6.
From above-mentioned preparation process as can be seen, more aforementioned first embodiment of present embodiment has reduced photoetching process one time, has simplified preparation technology, has shortened preparation time, has improved production efficiency.Though more aforementioned first embodiment is big for the distance of present embodiment horizontal electric field mode color film substrate conductive pattern and alignment films, but still less than prior art constructions, therefore also improved the ability of conductive pattern release electrostatic, can guarantee to eliminate fully frictional static, improved the homogeneity of friction process, improve the contrast of LCD, thereby improved the yields of LCD.
Need to prove that on the basis of previous embodiment, horizontal electric field mode color film substrate of the present invention can also form a plurality of expansion structures.For example, conductive pattern of the present invention can be formed between black matrix and the protective seam, and more aforementioned equally first embodiment has reduced photoetching process one time, can simplify preparation technology, has shortened preparation time, has improved production efficiency.Be specially: adopt the method for magnetron sputtering or thermal evaporation, the black matrix material layer and the transparent conductive film of deposit metallic material successively on substrate apply photoresist on transparent conductive film; Adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to conductive pattern and black matrix figure region, and photoresist is removed the zone fully corresponding to zone beyond conductive pattern and the black matrix figure; After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change; Etch away transparent conductive film and the black matrix material layer that photoresist is removed the zone fully fully by etching technics, form conductive pattern and black matrix figure after peeling off remaining photoresist, conductive pattern is positioned on the black matrix figure, and its width is identical with black matrix graphic width.
The present invention also provides a kind of horizontal electric field mode color film substrate manufacture method, forms also to be included in the step of deceiving matrix figure, color resin figure, protective seam and alignment films on substrate to be formed for eliminating the step that produces the conductive pattern of static in the alignment film rubbing process between described substrate and the alignment films.
Figure 11 is the process flow diagram of horizontal electric field mode color film substrate manufacture method first embodiment of the present invention, comprising:
In the present embodiment, both can adopt and form earlier black matrix figure, form the order of the color resin figure of three kinds of colors afterwards, and also can adopt and form the color resin figure of three kinds of colors earlier, form the order of black matrix figure afterwards.After forming protective seam, on protective seam, form conductive pattern, be specially: adopt the method deposition layer of transparent conductive film of magnetron sputtering or thermal evaporation, on transparent conductive film, apply one deck photoresist; Adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to the conductive pattern region, photoresist remove fully the zone corresponding to conductive pattern with exterior domain; After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change; Etch away the transparent conductive film that photoresist is removed the zone fully fully by etching technics, form conductive pattern after peeling off remaining photoresist, conductive pattern is positioned at black matrix figure region, and its width is less than the width of black matrix figure.Form alignment films at last, finish the preparation of present embodiment horizontal electric field mode color film substrate.Said process is introduced in earlier figures 1～scheme shown in Figure 5 in detail, repeats no more here.
Figure 12 is the process flow diagram of horizontal electric field mode color film substrate manufacture method second embodiment of the present invention, comprising:
In the present embodiment, conductive pattern and black matrix figure are to form simultaneously in a technology, are specially: adopt the method for magnetron sputtering or thermal evaporation, deposit the layer of transparent conductive film on substrate, apply the black matrix material layer of one deck resin material then; Adopt the normal masks plate that black matrix material layer is exposed, make black matrix material layer form complete reserve area and remove regional fully; After the development treatment, remove the black matrix material layer in zone fully and removed fully, the black matrix material layer of reserve area all keeps fully; Etch away the transparent conductive film of removing the zone fully fully by etching technics, form black matrix figure and conductive pattern, conductive pattern is between substrate and black matrix figure, and width equals black matrix graphic width.Afterwards, form color resin figure, protective seam and alignment films successively, finish the preparation of present embodiment horizontal electric field mode color film substrate.Said process is introduced in earlier figures 6～scheme shown in Figure 10 in detail, repeats no more here.
Figure 13 is the process flow diagram of horizontal electric field mode color film substrate manufacture method the 3rd embodiment of the present invention, comprising:
In the present embodiment, conductive pattern and black matrix figure are to form simultaneously in a technology, be specially: adopt the method for magnetron sputtering or thermal evaporation, the black matrix material layer and the transparent conductive film of deposit metallic material successively on substrate apply photoresist on described transparent conductive film; Adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to conductive pattern and black matrix figure region, and photoresist is removed the zone fully corresponding to zone beyond conductive pattern and the black matrix figure; After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change; Etch away transparent conductive film and the black matrix material layer that photoresist is removed the zone fully fully by etching technics, form conductive pattern and black matrix figure after peeling off remaining photoresist, conductive pattern is positioned on the black matrix figure, and its width is identical with the width of black matrix figure.Afterwards, form color resin figure, protective seam and alignment films successively, finish the preparation of present embodiment horizontal electric field mode color film substrate.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (15)
1. horizontal electric field mode color film substrate; comprise the black matrix figure, color resin figure, protective seam and the alignment films that are formed on the substrate; it is characterized in that, also be provided with the conductive pattern that is used for eliminating alignment film rubbing process generation static between described substrate and the alignment films.
2. horizontal electric field mode color film substrate according to claim 1 is characterized in that, described conductive pattern is arranged on described black matrix figure region.
3. horizontal electric field mode color film substrate according to claim 1 is characterized in that described conductive pattern is arranged on the described protective seam.
4. horizontal electric field mode color film substrate according to claim 3 is characterized in that, the width of described conductive pattern is less than the width of black matrix figure.
5. horizontal electric field mode color film substrate according to claim 1 is characterized in that, described conductive pattern is arranged between described substrate and the black matrix figure or on the described black matrix figure.
6. horizontal electric field mode color film substrate according to claim 5 is characterized in that, described conductive pattern and black matrix figure are forming with in a photoetching process.
7. according to the described horizontal electric field mode color film substrate of arbitrary claim among the claim 1-6, it is characterized in that described conductive pattern is structure as a whole.
8. according to the described horizontal electric field mode color film substrate of arbitrary claim among the claim 1-6, it is characterized in that described conductive pattern is connected with the public electrode of array base palte.
9. horizontal electric field mode color film substrate manufacture method; it is characterized in that, on substrate, form and also be included in the step that is formed for eliminating the conductive pattern of generation static in the alignment film rubbing process between described substrate and the alignment films in the step of deceiving matrix figure, color resin figure, protective seam and alignment films.
10. horizontal electric field mode color film substrate manufacture method according to claim 9; it is characterized in that, on substrate, also be included in the step that is formed for eliminating the conductive pattern of generation static in the alignment film rubbing process between described substrate and the alignment films in the step of the black matrix figure of formation, color resin figure, protective seam and alignment films and comprise:
Step 11, on substrate, form black matrix figure and color resin figure;
Step 12, on the substrate of completing steps 11, form protective seam;
Step 13, form conductive pattern on the substrate of completing steps 12, described conductive pattern is positioned at black matrix figure region;
Step 14, on the substrate of completing steps 13, form alignment films.
11. horizontal electric field mode color film substrate manufacture method according to claim 10, it is characterized in that, described step 13 comprises: adopt the method deposit transparent conductive film of magnetron sputtering or thermal evaporation on the substrate of completing steps 12, apply photoresist on described transparent conductive film; Adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to the conductive pattern region, photoresist remove fully the zone corresponding to conductive pattern with exterior domain; After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change; Etch away the transparent conductive film that photoresist is removed the zone fully fully by etching technics, form conductive pattern after peeling off remaining photoresist, conductive pattern is positioned at black matrix figure region, and its width is less than the width of black matrix figure.
12. horizontal electric field mode color film substrate manufacture method according to claim 9; it is characterized in that, on substrate, also be included in the step that is formed for eliminating the conductive pattern of generation static in the alignment film rubbing process between described substrate and the alignment films in the step of the black matrix figure of formation, color resin figure, protective seam and alignment films and comprise:
Step 21, form black matrix figure and conductive pattern on substrate, described conductive pattern is between substrate and black matrix figure;
Step 22, on the substrate of completing steps 21, form the color resin figure;
Step 23, on the substrate of completing steps 22, form protective seam;
Step 24, on the substrate of completing steps 23, form alignment films.
13. horizontal electric field mode color film substrate manufacture method according to claim 12, it is characterized in that, described step 21 comprises: adopt the method for magnetron sputtering or thermal evaporation, deposit transparent conductive film on substrate, the black matrix material layer of coated with resins material then; Adopt the normal masks plate that described black matrix material layer is exposed, make black matrix material layer form complete reserve area and remove regional fully, reserve area is removed the zone corresponding to zone beyond the black matrix figure fully corresponding to black matrix figure region fully; After the development treatment, remove the black matrix material layer in zone fully and removed fully, the black matrix material layer of reserve area all keeps fully; Etch away the transparent conductive film of removing the zone fully fully by etching technics, form black matrix figure and conductive pattern, conductive pattern is between substrate and black matrix figure, and its width is identical with the width of black matrix figure.
14. horizontal electric field mode color film substrate manufacture method according to claim 9; it is characterized in that, on substrate, also be included in the step that is formed for eliminating the conductive pattern of generation static in the alignment film rubbing process between described substrate and the alignment films in the step of the black matrix figure of formation, color resin figure, protective seam and alignment films and comprise:
Step 31, form black matrix figure and conductive pattern on substrate, described conductive pattern is positioned on the black matrix figure;
Step 32, on the substrate of completing steps 31, form the color resin figure;
Step 33, on the substrate of completing steps 32, form protective seam;
Step 34, on the substrate of completing steps 33, form alignment films.
15. horizontal electric field mode color film substrate manufacture method according to claim 14, it is characterized in that, described step 31 comprises: the method that adopts magnetron sputtering or thermal evaporation, the black matrix material layer and the transparent conductive film of deposit metallic material successively on substrate apply photoresist on described transparent conductive film; Adopt the normal masks plate that photoresist is exposed, make photoresist formation complete reserve area of photoresist and photoresist remove the zone fully, the complete reserve area of photoresist is corresponding to conductive pattern and black matrix figure region, and photoresist is removed the zone fully corresponding to zone beyond conductive pattern and the black matrix figure; After the development treatment, photoresist is removed the photoresist in zone fully and is removed fully, and the photoresist of the complete reserve area of photoresist does not change; Etch away transparent conductive film and the black matrix material layer that photoresist is removed the zone fully fully by etching technics, form conductive pattern and black matrix figure after peeling off remaining photoresist, conductive pattern is positioned on the black matrix figure, and its width is identical with the width of black matrix figure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910078373A CN101819348A (en) | 2009-02-26 | 2009-02-26 | Horizontal electric field mode color film substrate and manufacturing method thereof |
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