CN101814483A - Packaging structure of sensing element and method thereof - Google Patents
Packaging structure of sensing element and method thereof Download PDFInfo
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- CN101814483A CN101814483A CN200910007583A CN200910007583A CN101814483A CN 101814483 A CN101814483 A CN 101814483A CN 200910007583 A CN200910007583 A CN 200910007583A CN 200910007583 A CN200910007583 A CN 200910007583A CN 101814483 A CN101814483 A CN 101814483A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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Abstract
The invention discloses a packaging structure of a sensing element and a method thereof. The method comprises the following steps of: firstly, forming a first buffer layer on an acting surface of the sensing element and a plurality of welding pads on the acting surface and forming a first opening on the acting surface corresponding to the welding pad; secondly, arranging a patterned first metal layer in the first opening and connecting the patterned first layer to the first buffer layer of the first opening; and finally, forming a plurality of conductive bumps on the part of the first metal layer around the first opening. The external force is isolated by the first buffer layer, and the conductive bump and the first metal layer are combined to replace the traditional lead, so that the invention can effectively reduce the parasitic effects in the high-frequency signal, and effectively reduce the volume of the packaged sensing element.
Description
Technical field
The present invention relates to a kind of component packaging structure and method thereof, relate in particular to a kind of encapsulating structure and method thereof of sensing element.
Background technology
Generally in chip after manufacturing is finished; all need to be sealed by encapsulation technology; also promptly with package casing sealing wafer; the integrated circuit component that is positioned at each chip on the wafer with protection can not be damaged; and traditional chip encapsulation technology is earlier wafer to be cut into nude film; again nude film is placed on the lead frame fixing; again the contact on the nude film is connected to pin on the lead frame with lead; be connected to the outside by lead frame; and invade to prevent outside moisture via the sealing sealing again; at last plate leypewter, be attached on the base material such as printed circuit board (PCB) to make things convenient for integrated circuit via the outer pin of electroplating lead frame.
The schematic diagram of the chip 10 that Fig. 1 finishes for known encapsulation.One nude film 11 at first is provided, again in this die surfaces 11 ' on cover last layer weld pad (pad) 12, on this weld pad 12, form a plurality of electrical openings 14 at last with a plurality of protection pieces 13.This weld pad 12 can be made with conducting metals such as aluminium, and this protection piece 13 can be made with composite materials such as silicon nitrides, and this 14 of electrical opening utilizes the mode of routing (Wire-Bonding) to do electric connection with outside plant; The chip encapsulation technology of above-mentioned known routing type, owing to still need keep suitable distance between line and the line, therefore, along with chip with compact integration trend, to face the challenge of handling fine pitch intraconnections (fine-pitch interconnects), make very limited for the development of electronic component densification; And in packaging and routing technology, might cause chip to damage, also residual unnecessary stress causes sensing element signal drift in use on chip easily, and can't absorb precipitate external force and cause the damage that can not expect; And can cause electrical delay excessive with lead as the mode that electrically connects, can't fast reaction cooperate sensing element.
In order to solve the above problems, generally adopt at present ball grid array (BGA) semiconductor packaging of non-routing type, because pin is arranged, is provided with to the bottom area of available whole packaging body, therefore can provide the I/O connecting end (I/O Connection) of quantity sufficient; The encapsulation technology of above-mentioned BGA only fixes with substrate or circuit board with surperficial gluing (SMT), so adhesive force is relatively poor, is subject to external force and causes coming off and cause the insufficient strength problem and will have, and have problem such as thermal stress; Especially be applied on the various sensing elements, for example pressure sensor and temperature sensor etc., the ghost effect of using under the high-frequency signal state also will influence the task performance of sensing element.
In sum, how a kind of wafer-class encapsulation structure and method thereof of sensing element are provided, can dwindle package dimension, avoid the routing defective chip, under high-frequency signal, can effectively reduce ghost effect, and abundant isolated environment stress and absorb the precipitate external force of buffering, become present industry problem anxious to be overcome.
Summary of the invention
In view of aforesaid problem, the invention provides a kind of encapsulating structure and method thereof of sensing element, in order to dwindle package dimension, avoid the routing defective chip, under high-frequency signal, can effectively reduce ghost effect, abundant isolated environment stress and absorb the precipitate external force of buffering.
For reaching above-mentioned purpose, the present invention discloses a kind of method for packing of sensing element, may further comprise the steps: the sensing element with acting surface is provided, and this acting surface refers in order to be the zone that physical property contacts with treating the sensing thing; Form a plurality of weld pads on this acting surface; Form first resilient coating on described acting surface and each described weld pad, and form first opening respectively, described weld pad surface portion is leaked outside in described first opening in the position of corresponding each described weld pad; Forming patterned the first metal layer reaches in abutting connection with each in described first opening in each described first opening, and the part that this patterned the first metal layer is positioned on first resilient coating of each described first opening is spaced apart from each other, and electrically connects via each described first opening and each described weld pad to make described the first metal layer; And form a plurality of conductive projections on described the first metal layer is positioned at part on each described first around openings, and the first metal layer that each described conductive projection and corresponding intervals are opened electrically connects.
In addition, the present invention more can be before forming a plurality of conductive projections, form second resilient coating earlier on described first resilient coating and each described isolated the first metal layer, and the position on described first opening and corresponding each described isolated the first metal layer away from each forms second opening; Forming the second patterned metal level reaches on second resilient coating of described second opening in abutting connection with each in each described second opening, the part that the described second patterned metal level is positioned on second resilient coating of each described second opening is spaced apart from each other, and makes described second metal level electrically connect via described second opening and each described isolated the first metal layer.
Hold above-mentionedly, the present invention discloses the encapsulating structure of the sensing element that corresponding said method makes, and it comprises: sensing element, have an acting surface, and this acting surface refers in order to being the zone that physical property contacts with treating the sensing thing, and described acting surface is provided with a plurality of weld pads; First resilient coating is formed on described acting surface and each described weld pad, and forms first opening respectively in the position of corresponding each described weld pad; Patterned the first metal layer, be formed in each described first opening and reach on first resilient coating of each described first opening, and the part that described patterned the first metal layer is positioned on first resilient coating of each described first opening is spaced apart from each other, and electrically connects via each described first opening and each described weld pad to make described the first metal layer; And a plurality of conductive projections, be formed at described the first metal layer and be positioned on the part on each described first around openings, and the first metal layer that each described conductive projection and corresponding intervals are opened electrically connects.
In addition, the encapsulating structure of the sensing element that corresponding said method is made includes: sensing element, have an acting surface, and this acting surface refers in order to being the zone that physical property contacts with treating the sensing thing, and this acting surface is provided with a plurality of weld pads; First resilient coating, be formed on this acting surface and each described weld pad on, and form first opening respectively in the position of corresponding each described weld pad; Patterned the first metal layer, be formed in each described first opening and reach on first resilient coating of each described first opening, the part that described patterned the first metal layer is positioned on first resilient coating of each described first opening is spaced apart from each other, and electrically connects via each described first opening and each described weld pad to make described the first metal layer; Second resilient coating is formed on this first resilient coating and each the described the first metal layer at interval, and the position on described first opening and corresponding each described the first metal layer at interval away from each forms second opening; The second patterned metal level, be formed in each described second opening and reach on second resilient coating of each described second opening, the part that this second patterned metal level is positioned on second resilient coating of each described second opening is spaced apart from each other, and electrically connects via described second opening and each described the first metal layer at interval to make described second metal level; A plurality of conductive projections are formed at described second metal level and are positioned on the part on each described second around openings, and second metal level that each described conductive projection and corresponding intervals are opened electrically connect.
Compare down with known technology, the invention provides a kind of encapsulating structure and method thereof of sensing element.At first the position on the described weld pad forms first opening corresponding to each in described first resilient coating; Then form on first resilient coating of patterned the first metal layer described first opening in described first opening and in abutting connection with each, and make the part each interval of described the first metal layer on the part on described first around openings and adjacent described first around openings; Form a plurality of conductive projections at last on each described the first metal layer is positioned at part on each described first around openings.With combining by described conductive projection and described the first metal layer to replace traditional lead, avoid the routing defective chip, and can under high-frequency signal, can effectively reduce ghost effect, and by the isolated external force of first resilient coating, and effectively dwindle the volume that the sensing element encapsulation is finished.
Description of drawings
Fig. 1 is the schematic diagram of known technology;
Fig. 2 is a first embodiment of the present invention structural representation;
Fig. 3 is a second embodiment of the present invention structural representation;
Fig. 4 is the encapsulating structure vertical view of sensing element of the present invention;
Fig. 5 a to Fig. 5 f is the schematic flow sheet of the first embodiment of the present invention; And
Fig. 6 a to Fig. 6 i is the schematic flow sheet of the second embodiment of the present invention.
Description of reference numerals in the above-mentioned accompanying drawing is as follows:
1 chip-packaging structure
11 nude films
11 ' die surfaces
13 protection pieces
14 electrical openings
2, the encapsulating structure of 3 sensing elements
21,31 sensing elements
21 ', 31 ' acting surface
12,22,32 weld pads
22 ', 32 ' weld pad surface
23,33 first resilient coatings
23 ", 33 " first buffer-layer surface
23 ', 33 ' the first openings
24,34 the first metal layers
24 ', 34 ' the first metal layer surface
35 second resilient coatings
35 " second buffer-layer surface
35 ' the second openings
36 second metal levels
25,37 conductive projections
The L1 wiring shape
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those of ordinary skills can understand other advantages of the present invention and effect easily by the content that this specification disclosed.The present invention also can be implemented or be used by other different instantiations, and the every details in this specification also can be carried out various modifications and change based on different viewpoints and application under not departing from spirit of the present invention.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, below will describe the present invention in detail with the preferred embodiment conjunction with figs..
First embodiment
Fig. 2 shows the structural representation of first embodiment of the encapsulating structure of a kind of sensing element of the present invention.The encapsulating structure 2 of this sensing element mainly is made of sensing element 21, weld pad 22, first resilient coating 23, the first metal layer 24 and conductive projection 25.
This sensing element 21, for utilizing wafer-class encapsulation (Wafer Level Package, WLP) chip of technology encapsulation, and the wafer-class encapsulation technology is earlier the full wafer sensing wafer directly to be encapsulated, and then will encapsulate the sensing wafer of finishing and cut into single chips, almost same with original die size with the chip size that this kind technology is packaged, the technology that this all knows for those of ordinary skills is so no longer given unnecessary details in this.This sensing element 21 have an acting surface 21 ', particularly, this acting surface 21 ' refer to is in order to being the zone that physical property contacts with treating the sensing thing, and this acting surface 21 ' on be laid with the electrical passage (not shown) of conduction usefulness.A plurality of weld pads 22 of this acting surface 21 ' be provided with simultaneously, this weld pad 22 can use aluminium, silicon or copper to become, but not as limit; This weld pad 22 in order to connect this acting surface 21 ' on electrical passage, usually, four main electrical passages of these sensing element 21 minimum needs, in order to importing positive and negative signal, current source and earth connection, but not as limit.
This first resilient coating 23 be formed at this acting surface 21 ' and a plurality of these weld pads 22 on.Particularly, this first resilient coating 23 can form by the deposition (DEPOSITION) or the mode of growth (GROWTH), but also endlessly this exceeds; It is made that this first resilient coating 23 can be the made elastic-plastic material of high molecular polymer; can according to user's demand use the young's modulus scope at 10Mpa to the high molecular polymer between the 10000Mpa; polyimides (Polyimide) for example; with characteristic by elastic-plastic material; significantly reduce the harmful effect of environmental stress, reach the purpose of this sensing element 21 of protection.The thickness of this first resilient coating 23 also can change along with user's demand, the etching mode of knowing via dry ecthing (DRYETCHING), wet etching (WET ETCHING) or other correlative technology fields personnel, with this first resilient coating 23 etch a plurality of these first openings 23 ', make this a plurality of first openings 23 of the weld pad surface 22 of this weld pad 22 ' expose to ' in.
This patterned the first metal layer 24 be formed at each described first opening 23 ' in and in abutting connection with each described first opening 23 ' first resilient coating 23 on, by the known patterning mode of various equivalent modifications such as photomask and etching, make the part the first metal layer 24 that is positioned at each described first opening 23 ' go up on every side and the part the first metal layer 24 that is positioned at each adjacent described first opening 23 ' go up on every side apart from one another by, make this first buffer-layer surface 23 " away from each described first opening 23 ' on part expose, and each described the first metal layer 24 is at interval electrically connected with each described weld pad 22 respectively.Particularly, this first metal layer 24 can form with the deposition or the mode of growth, and preferably, it is made that this first metal layer 24 can be aluminium, silicon, copper, tungsten, Al-Si-Cu alloy or other conductive characteristic good metal, but not as limit; More in detail, the height of this first metal layer 24, width and shape, all can go to change with user's demand, this the first metal layer 24 can be formed on this first resilient coating 23 elongate shape, purpose can be as far as possible away from this sensing element 21 for allowing electric connection put, the thermal impact that is produced during with reducing noise interference, signal drift and conduction.
Described a plurality of conductive projection 25 is formed at this first metal layer 24 and is positioned on the part of each described first opening 23 ' go up on every side, and electrically connect with each described the first metal layer 24 at interval, by combining of this first metal layer 24 and this conductive projection 25, to replace traditional lead, avoid the routing defective chip, simultaneously, effectively reduce ghost effect, particularly, described a plurality of conductive projection 25 can be the projection of tin system, and can this conductive projection 25 be arranged at needed optional position with user's demand.
See also Fig. 5 a figure to Fig. 5 f, with the constructive method of encapsulating structure first embodiment of the sensing element that describes the invention described above in detail.
Shown in Fig. 5 a, this sensing element 21 at first is provided, its have acting surface 21 ', this sensing element 21 is also for utilizing the chip of wafer-class encapsulation technology encapsulation, and this acting surface 21 ' on be laid with the electrical passage (not shown) of conduction usefulness.
Next shown in Fig. 5 b, go up in this acting surface 21 ' and to form a plurality of weld pads 22, with electrically connect this acting surface 21 ' on electrical passage.
Next shown in Fig. 5 c, form described first resilient coating 23 in described acting surface 21 ' and each described weld pad 22 on.
Next shown in Fig. 5 d, the position on corresponding each described weld pad 22 form a plurality of first openings 23 ', make the weld pad surface 22 ' part of each described weld pad 22 expose to this first opening 23 ' in.
Next shown in Fig. 5 e, form patterned the first metal layer 24 in this first opening 23 ' in and in abutting connection with each on first resilient coating 23 of described first opening, by the known patterning mode of various equivalent modifications such as photomask and etching, make the part the first metal layer 24 that is positioned at each described first opening 23 ' go up on every side and the part the first metal layer 24 that is positioned at each adjacent described first opening 23 ' go up on every side apart from one another by, so that this first buffer-layer surface 23 " away from each described first opening 23 ' on part expose, and each described the first metal layer 24 is at interval electrically connected with each described weld pad 22 respectively.
Next shown in Fig. 5 f, form a plurality of conductive projections 25 and be positioned on the part of each described first opening 23 ' go up on every side, and each described conductive projection 25 is electrically connected with each described the first metal layer 24 at interval respectively in the first metal layer 24.
Second embodiment
Fig. 3 shows the structural representation of second embodiment of the encapsulating structure of a kind of sensing element of the present invention.The encapsulating structure 30 of this sensing element mainly is made of sensing element 31, weld pad 32, first resilient coating 33, the first metal layer 34, second resilient coating 35, second metal level 36 and conductive projection 37.
The maximum differential of second embodiment of the encapsulating structure of sensing element of the present invention and the first above-mentioned embodiment is, also include second resilient coating 35, second metal level 36, conductive projection 37 and between structural relation, all the other elements are all same as the previously described embodiments, so something in common is not given unnecessary details in addition.
This second resilient coating 35, be formed on this first resilient coating 33 and each the described the first metal layer 34 at interval, and the etching mode of knowing via dry ecthing, wet etching or other correlative technology fields personnel, in the position on corresponding each described the first metal layer 34 and away from each described first opening 23 ' on the position form second opening 35 ', so that each described the first metal layer surface 34 ' part expose to each described second opening 35 ' in.Particularly, this second resilient coating 35 can form by the deposition or the mode of growth, but also endlessly this exceeds; This second resilient coating 35 also can composition be that the elastic-plastic material of high molecular polymer class is made, in addition, this second resilient coating 35 also can use the young's modulus scope made to the high molecular polymer class between the 10000Mpa at 10Mpa according to user's demand, for example poly-inferior acyl (Polyimide) or other meet the macromolecule polymer material of scope, but not as limit; With by the combining of this first resilient coating 33 and this second resilient coating 35, significantly reduce the harmful effect of environmental stress, reach the purpose of protecting this sensing element 21 more, and the thickness of this second resilient coating 35 can change also along with user's demand.
It should be noted that, described a plurality of conductive projection 37, being formed at this second metal level 36 is positioned on the part of each described second opening 35 ' go up on every side, electrically connect with each described second metal level 36, combine with this conductive projection 37 by this first metal layer 34, second metal level 36, replace traditional lead, to avoid the routing defective chip, and under high-frequency signal, effectively reduce ghost effect, and this conductive projection 37 is arranged at needed optional position with user's demand.
See also Fig. 6 a to Fig. 6 i, with the constructive method of encapsulating structure second embodiment of the sensing element that describes the invention described above in detail.
Shown in Fig. 6 a, this sensing element 31 at first is provided, its have acting surface 31 ', this sensing element 31 is for utilizing the chip of wafer-class encapsulation technology encapsulation, and this acting surface 31 ' on be laid with the electrical passage (not shown) of conduction usefulness.
Next shown in Fig. 6 b, in this acting surface 31 ' on form a plurality of weld pads 32, with electrically connect this acting surface 31 ' on electrical passage.
Next shown in Fig. 6 c, form this first resilient coating 33 in this acting surface 31 ' and each described weld pad 32 on.
Next shown in Fig. 6 d, the position on corresponding each described weld pad 32 form first opening 33 ', make this weld pad surface 32 ' part expose to each described first opening 33 ' in.
Next shown in Fig. 6 e, form patterning the first metal layer 34 in each described first opening 33 ' in and in abutting connection with each described first opening 33 ' this first resilient coating 33 on, finger is by the known patterning mode of various equivalent modifications such as photomask and etching, make the part the first metal layer 34 that is positioned at each described first opening 33 ' go up on every side and the part the first metal layer 34 that is positioned at each adjacent described first opening 33 ' go up on every side apart from one another by, and expose outside this first resilient coating 33 of part, and each described the first metal layer 34 is at interval electrically connected with each described weld pad 32 respectively.
Next shown in Fig. 6 f, form second resilient coating 35 on this first resilient coating 33 and each described the first metal layer 34 at interval.
Next shown in Fig. 6 g, in to the position on should the first metal layer 34 and away from each described first opening 33 ' on the position form second opening 35 ', make these the first metal layer 34 parts expose to this second opening 35 ' in.
Next shown in Fig. 6 h, form the second patterned metal level 36 in each described second opening 35 ' in and in abutting connection with each described second opening 35 ' this second resilient coating 35 on, finger is by the known patterning mode of various equivalent modifications such as photomask and etching, make part second metal level 36 that is positioned at each described second opening 35 ' go up on every side and part second metal level 36 each intervals that are positioned at each adjacent described second opening 35 ' go up on every side, and each described second metal level 36 is at interval electrically connected with each described the first metal layer 34 at interval respectively.
Next shown in Fig. 6 i, form a plurality of conductive projections 37 on each described second metal level 36.
Moreover Fig. 4 shows the schematic top plan view of encapsulating structure when encapsulation is finished of sensing element of the present invention.Fig. 4 promptly shows by the combining of this first metal layer 24 and this conductive projection 25, and conductive projection 25 can be arranged at the optional position on the surface after encapsulation is finished, and can be away from the band of position of this weld pad 22; Wiring shape L1 shows that promptly the wiring shape of this first metal layer 24 is a reverse-hook shape, but also can be arbitrary shape, not as limit, and the combination by this first metal layer 24 and this first resilient coating 23, more can promote the reliability and the absorption of integral member or cushion precipitate external force.
In sum, the invention provides a kind of encapsulating structure and method thereof of sensing element.At first the position on the described weld pad forms first opening corresponding to each in this first resilient coating; Then form on first resilient coating of patterned the first metal layer described first opening in this first opening and in abutting connection with each, and this first metal layer is spaced apart from each other in part on this first around openings and part on adjacent this first around openings; Last then form a plurality of conductive projections on each described the first metal layer is positioned at part on each described first around openings.With by the combine function that replace traditional lead of this conductive projection, avoid the routing defective chip, and can under high-frequency signal, can effectively reduce ghost effect with this first metal layer; And by the isolated external force of first resilient coating, and effectively dwindle the volume that the sensing element encapsulation is finished.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Those of ordinary skill all can be under spirit of the present invention and category in the technical field under any, and the foregoing description is modified and changed.Therefore, the scope of the present invention should be listed as appended claim.
Claims (36)
1. the encapsulating structure of a sensing element is characterized in that, comprising:
Sensing element has an acting surface, and this acting surface is provided with a plurality of weld pads;
First resilient coating is formed on this acting surface and each described weld pad, and forms first opening respectively in the position of corresponding each described weld pad;
Patterned the first metal layer, be formed in each described first opening and reach on first resilient coating of each described first opening, and the part that this patterned the first metal layer is positioned on first resilient coating of each described first opening is spaced apart from each other, and electrically connects via each described first opening and each described weld pad to make this first metal layer; And
A plurality of conductive projections are formed at this first metal layer and are positioned on the part on each described first around openings, and the first metal layer that each described conductive projection and corresponding intervals are opened electrically connect.
2. the encapsulating structure of sensing element as claimed in claim 1 is characterized in that, this sensing element is the chip that utilizes the encapsulation of wafer-class encapsulation technology.
3. the encapsulating structure of sensing element as claimed in claim 1 is characterized in that, the material that forms this weld pad is an aluminium.
4. the encapsulating structure of sensing element as claimed in claim 1 is characterized in that, the material that forms this first metal layer is a copper.
5. the encapsulating structure of sensing element as claimed in claim 1 is characterized in that, the elastic-plastic material that this first resilient coating composition is a high molecular polymer is made.
6. the encapsulating structure of sensing element as claimed in claim 1 is characterized in that, the material that forms this conductive projection is a tin.
7. the encapsulating structure of sensing element as claimed in claim 1 is characterized in that, this conductive projection is positioned at the band of position of the surface of encapsulation after finishing away from this weld pad.
8. the encapsulating structure of sensing element as claimed in claim 1 is characterized in that, each described the first metal layer at interval forms on this first resilient coating and elongates shape.
9. the encapsulating structure of a sensing element is characterized in that, comprising:
Sensing element has acting surface, and this acting surface is provided with a plurality of weld pads;
First resilient coating, be formed on this acting surface and each described weld pad on, and form first opening respectively in the position of corresponding each described weld pad;
Patterned the first metal layer, be formed in each described first opening and reach on first resilient coating of each described first opening, the part that this patterned the first metal layer is positioned on first resilient coating of each described first opening is spaced apart from each other, and electrically connects via each described first opening and each described weld pad to make this first metal layer;
Second resilient coating is formed on this first resilient coating and each the described the first metal layer at interval, and the position on described first opening and corresponding each described the first metal layer at interval away from each forms second opening;
The second patterned metal level, be formed in each described second opening and reach on second resilient coating of each described second opening, the part that this second patterned metal level is positioned on second resilient coating of each described second opening is spaced apart from each other, and electrically connects via this second opening and each described isolated the first metal layer to make this second metal level; And
A plurality of conductive projections are formed at this second metal level and are positioned on the part on each described second around openings, and second metal level that each described conductive projection and corresponding intervals are opened electrically connect.
10. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, this sensing element is the chip that utilizes the encapsulation of wafer-class encapsulation technology.
11. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, the material that forms this weld pad is an aluminium.
12. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, the material that forms this first metal layer is a copper.
13. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, the material that forms this second metal level is a copper.
14. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, the elastic-plastic material that this first resilient coating composition is a high molecular polymer is made.
15. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, the elastic-plastic material that this second resilient coating composition is a high molecular polymer is made.
16. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, the material that forms this conductive projection is a tin.
17. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, this conductive projection is positioned at the band of position of the surface of encapsulation after finishing away from this weld pad.
18. the encapsulating structure of sensing element as claimed in claim 9 is characterized in that, each described second metal level at interval forms on this second resilient coating and elongates shape.
19. the method for packing of a sensing element is characterized in that, may further comprise the steps:
Sensing element with acting surface is provided;
Form a plurality of weld pads on this acting surface;
Form first resilient coating on this acting surface and each described weld pad, and form first opening respectively in the position of corresponding each described weld pad;
Forming patterned the first metal layer reaches in abutting connection with each in described first opening in each described first opening, and the part that this patterned the first metal layer is positioned on first resilient coating of each described first opening is spaced apart from each other, and electrically connects via each described first opening and each described weld pad to make this first metal layer; And
Form a plurality of conductive projections on this first metal layer is positioned at part on each described first around openings, and the first metal layer that each described conductive projection and corresponding intervals are opened electrically connects.
20. the method for packing as the sensing element of claim 19 is characterized in that, this sensing element is the chip of wafer-class encapsulation technology encapsulation.
21. the method for packing as the sensing element of claim 19 is characterized in that the material that forms this weld pad is an aluminium.
22. the method for packing as the sensing element of claim 19 is characterized in that the material that forms this first metal layer is a copper.
23. the method for packing as the sensing element of claim 19 is characterized in that the elastic-plastic material that this first resilient coating composition is a high molecular polymer is made.
24. the method for packing as the sensing element of claim 19 is characterized in that the material that forms this projection is a tin.
25. the method for packing as the sensing element of claim 19 is characterized in that, this conductive projection is positioned at surface after encapsulation is finished away from the band of position of this weld pad.
26. the method for packing as the sensing element of claim 19 is characterized in that, each described the first metal layer at interval forms the elongation shape on this first resilient coating.
27. the method for packing of a sensing element is characterized in that, may further comprise the steps:
Sensing element with acting surface is provided;
Form a plurality of weld pads on this acting surface;
Form first resilient coating on this acting surface and on each described weld pad, and form first opening respectively in the position of corresponding each described weld pad;
Forming patterned the first metal layer reaches in abutting connection with each in described first opening in each described first opening, and the part that this patterned the first metal layer is positioned on first resilient coating of each described first opening is spaced apart from each other, and electrically connects via each described first opening and each described weld pad to make this first metal layer;
Form second resilient coating on this first resilient coating and each described the first metal layer at interval, and the position on described first opening and corresponding each described the first metal layer at interval away from each forms second opening;
Forming the second patterned metal level reaches on second resilient coating of described second opening in abutting connection with each in each described second opening, the part that this second patterned metal level is positioned on second resilient coating of each described second opening is spaced apart from each other, and electrically connects via this second opening and each described isolated the first metal layer to make this second metal level; And
Form a plurality of conductive projections on this second metal level is positioned at part on each described second around openings, and second metal level that each described conductive projection and corresponding intervals are opened electrically connects.
28. the method for packing as the sensing element of claim 27 is characterized in that, this sensing element is the chip that utilizes the encapsulation of wafer-class encapsulation technology.
29. the method for packing as the sensing element of claim 27 is characterized in that the material that forms this weld pad is an aluminium.
30. the method for packing as the sensing element of claim 27 is characterized in that the material that forms this first metal layer is a copper.
31. the method for packing as the sensing element of claim 27 is characterized in that the material that forms this second metal level is a copper.
32. the method for packing as the sensing element of claim 27 is characterized in that the elastic-plastic material that this first resilient coating composition is a high molecular polymer is made.
33. the method for packing as the sensing element of claim 27 is characterized in that the elastic-plastic material that this second resilient coating composition is a high molecular polymer is made.
34. the method for packing as the sensing element of claim 27 is characterized in that the material that forms this conductive projection is a tin.
35. the method for packing as the sensing element of claim 27 is characterized in that, this conductive projection is positioned at surface after encapsulation is finished away from the band of position of this weld pad.
36. the method for packing as the sensing element of claim 27 is characterized in that each described second metal level at interval forms the elongation shape on this second resilient coating.
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| CN200910007583A CN101814483A (en) | 2009-02-23 | 2009-02-23 | Packaging structure of sensing element and method thereof |
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| CN200910007583A CN101814483A (en) | 2009-02-23 | 2009-02-23 | Packaging structure of sensing element and method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017071426A1 (en) * | 2015-10-28 | 2017-05-04 | 苏州晶方半导体科技股份有限公司 | Image sensing chip packaging structure and packaging method |
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2009
- 2009-02-23 CN CN200910007583A patent/CN101814483A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017071426A1 (en) * | 2015-10-28 | 2017-05-04 | 苏州晶方半导体科技股份有限公司 | Image sensing chip packaging structure and packaging method |
| US10541262B2 (en) | 2015-10-28 | 2020-01-21 | China Wafer Level Csp Co., Ltd. | Image sensing chip packaging structure and packaging method |
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