CN101813624B - Method for on-line detection of form of silicon nanocrystals - Google Patents
Method for on-line detection of form of silicon nanocrystals Download PDFInfo
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- CN101813624B CN101813624B CN 200910078556 CN200910078556A CN101813624B CN 101813624 B CN101813624 B CN 101813624B CN 200910078556 CN200910078556 CN 200910078556 CN 200910078556 A CN200910078556 A CN 200910078556A CN 101813624 B CN101813624 B CN 101813624B
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Abstract
The invention discloses a method for on-line detection of the form of silicon nanocrystals. The method comprises the following steps of: preparing a plurality of silicon plates serving as substrates, and growing a tunneling medium layer on the surface of each substrate; treating the surfaces of the substrates by using diluted hydrofluoric acid, and growing a layer of silicon nanocrystals on the surface of each substrate; irradiating incident light which is monochromatic light with a 365nm wave length onto the surfaces of the substrates, wherein because surface materials and shapes are different, the intensity of reflected light is certainly changed; recording reflection indexes of nanocrystalline silicon chips in various growth periods, and establishing an expression of the relationship between the growth periods and the reflection indexes; performing fragment analysis of various silicon chips by using a scanning electronic microscope and a transmission electron microscope, determining the forms of the nanocrystals in different growth periods, and establishing an expression of the relationship between different forms of the nanocrystals and the growth periods; and establishing a corresponding expression of the relationship between the different forms and the reflection indexes of the nanocrystalline, and determining the form of the growing nanocrystals according to a reflection index. By the method, the on-line quick detection of the form of the silicon nanocrystals is realized.
Description
Technical field
The present invention relates to the method that a kind of nano-crystalline granule detects, particularly a kind of method of utilizing the online detection form of silicon nanocrystals of variation of measuring the reflection of monochromatic light rate.
Background technology
Since 1967; The D.Kahng of AT&T Labs and S.M.Sze have proposed since the nonvolatile semiconductor memory of FGS floating gate structure, the floating boom semiconductor memory of the MOSFET structure of piling up based on grid just on capacity, cost and power consumption with occupy great advantage replaced before the long-term magnetic store that uses.On this basis; Toshiba Corp has successfully proposed the notion of Flash storer in 1984, the Flash storer is the main flow device on the nonvolatile semiconductor memory market at present, but along with the microelectric technique node is constantly pushed ahead; The technology live width will further reduce; Traditional flash device based on FGS floating gate structure meets with serious technological difficulties, and main cause is the lasting attenuate owing to tunneling medium layer, and leaky is serious all the more; But seriously limited the downsizing of Flash device, the density refractory that causes floating-gate memory spare is to promote.The solution that solves this type of problem at present has two kinds.A kind of revolution formula scheme is exactly the storage medium that adopts different fully storage mechanism and structure, like RRAM, and FeRAM, PCRAM etc.; A kind of in addition modified scheme is exactly on the basis of existing nonvolatile floating grid memory, adopts new floating boom storage medium, like Nitride, nanocrystalline or the like.For preceding a kind of scheme, owing to adopt two ends formula storage organization, storage unit takies area of chip and can significantly reduce; Density can further improve; But in the middle of this scheme, that have and compatibility traditional cmos process are not very high, need to increase extra processing step; The storage mechanism that has is still waiting further research, therefore also is not very ripe at present.And, adopt silicon nitride for second kind of scheme, nonmetal nanocrystalline; Almost compatible fully with traditional cmos process; Even need not increase extra Lithographic template, there is boundless application prospect in the nonvolatile floating grid memory field for below the present 65nm.
But the online detection for the detection of nano-crystalline granule, particularly form of silicon nanocrystals lacks a kind of method accurately and reliably.Analyzing the nanocrystalline the most frequently used method of form at present adopts high precision ESEM (SEM) and transmission electron microscope (TEM) to detect exactly.
The principle of work of SEM is with a branch of superfine electron beam scanning sample; Inspire electronic secondary at sample surfaces; What of electronic secondary are relevant with electron beam incident angle, that is to say relevant with the surface structure of sample, therefore can be according to the configuration of surface that how much detects of the electronic secondary of collecting.The principle of work of TEM is to see through sample with electron beam, and the image that the sample of process attenuate focuses on and the amplification back is produced detects and shows configuration of surface.
But these two kinds of methods all need the fragmentation analysis; Cycle is long, and cost is also higher, and these two kinds of methods mainly are to detect single nanocrystalline form; The nanocrystalline very difficult express statistic that differs for size goes out mean value, is not suitable for the fast detecting of large-scale production.
Summary of the invention
The technical matters that (one) will solve
The technical issues that need to address of the present invention just are; Overcome in the prior art and need carry out the shortcoming that fragmentation is analyzed to silicon chip with ESEM; A kind of method of utilizing the online detection form of silicon nanocrystals of variation of measuring the reflection of monochromatic light rate is provided, to realize on-line quick detection to form of silicon nanocrystals.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of online detection form of silicon nanocrystals, this method comprises:
Step 1: prepare some silicon chips as substrate, in this each substrate surface tunneling medium layer of growing respectively;
Step 2: handle each substrate surface with dilute hydrofluoric acid, nanocrystalline with the method for LPCVD again at this each substrate surface difference silicon growth layer, form a plurality of nanocrystalline silicon chips;
Step 3: utilize wavelength to be incident to this a plurality of nanocrystalline silicon chips surface as incident light for the monochromatic light of 365nm; Because surfacing and pattern is different; Reflective light intensity will inevitably change; Write down the reflectivity of the nanocrystalline silicon chip of various growth times, set up the relational expression between growth time and the reflectivity;
Step 4: a plurality of nanocrystalline silicon chips carry out the fragmentation analysis with ESEM and transmission electron microscope more than inciting somebody to action, and confirm the form that different growth times are nanocrystalline, set up different nanocrystalline forms and growth periods;
Step 5: a plurality of nanocrystalline silicon chip different shapes and reflectivity are mapped, set up corresponding relational expression, thereby confirm the nanocrystalline form of growth according to reflectivity.
In the such scheme, tunneling medium layer described in the step 1 is SiO
2Or Si
3N
4
In the such scheme, silicon growth layer is nanocrystalline respectively at each substrate surface described in the step 2,, differs successively 0.5 minute since 1 minute at the growth time of each substrate surface.
In the such scheme; Wavelength described in the step 3 is that the monochromatic light of 365nm is produced by online thickness checkout equipment; Or with spectroscope white light is resolved into the monochromatic light of different wave length; And constitute continuous visible light, the intercepting wavelength is that near one section spectrum extremely narrow 365nm is as this monochromatic light then.
In the such scheme, the facula area of incident light described in the step 3 is 2.7 μ m * 2.7 μ m.
In the such scheme, reflectivity described in the step 3 is a reflected light and the ratio of the light intensity of initial incident light.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, the method for the online detection form of silicon nanocrystals of variation of reflection of monochromatic light rate is measured in utilization provided by the invention; Through nano-crystalline granule to absorption of incident light; Thereby influence the variation of reflective light intensity; Cause the change of reflectivity occurrence law property, therefore can qualitatively nanocrystalline form and reflection of light rate be connected, thereby can realize on-line quick detection silicon nanocrystal.
2, utilize the present invention, can get in touch, realize the fast detecting silicon nanocrystal setting up between the actual form of reflectivity and silicon nanocrystal.
3, utilize the present invention, can be used for the form of online detection silicon nanocrystal, form that also can other particle of on-line monitoring.The method form is simple, convenient measurement, and speed is fast, and efficient is high, can be used for the on-line monitoring of large-scale production.
Description of drawings
Fig. 1 is a realization principle schematic of the present invention;
Fig. 2-the 1st, SiO
2The different size silicon nanocrystal is to the synoptic diagram of reflectivity influence on the substrate;
Fig. 2-the 2nd, the different size silicon nanocrystal is to the synoptic diagram of reflectivity influence on the Nitride substrate;
Fig. 2-the 3rd, SiO
2And Si
3N
4The nanocrystalline synoptic diagram of different growth times on the substrate to the reflectivity influence;
Fig. 3 is the method flow diagram that the online detection form of silicon nanocrystals of variation of reflection of monochromatic light rate is measured in utilization provided by the invention;
Wherein, 1-incident light; The 2-silicon nanocrystal; 3-is through the reflected light of silicon nanocrystal; 4-is through the reflected light of silicon nanocrystal and tunnel layer medium; The 5-tunneling medium layer; 6-incident light transmitter; 7-reflected light receiver.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The method of the online detection form of silicon nanocrystals of variation of reflection of monochromatic light rate is measured in utilization provided by the invention; Through nano-crystalline granule to absorption of incident light; Thereby influence the variation of reflective light intensity; Cause the change of reflectivity occurrence law property, therefore can qualitatively nanocrystalline form and reflection of light rate be connected, thereby can realize on-line quick detection silicon nanocrystal.
As shown in Figure 1, realization principle of the present invention is following: for silicon dioxide (like Fig. 2-1), nanocrystalline density is big more; Thickness is big more, and the loss of incident light is just big more, and reflective light intensity also will reduce; Thereby can set up corresponding relational expression, reach the purpose of on-line monitoring; And for silicon nitride, nanocrystalline density increases, because the character of backing material; The reflectance varies trend of different detection wavelength is also different; But for the wavelength between given zone, reflectivity also presents regular variation (like Fig. 2-2), thereby the light that also can choose specific wavelength is as detecting light.
Be positioned at the detection light of interval 325nm～420nm for wavelength, the reflectance varies of silicon dioxide and silicon nitride substrate presents consistent Changing Pattern: nanocrystalline size increases, and reflectivity reduces.Thereby the light that the most significant wavelength of selection reflectance varies trend is 365nm is as detecting light (like Fig. 2-3).
The present invention adopts incident illumination radiosilicon sheet surface, detects the method for nanocrystalline form through the variation of detection of reflected rate.Said incident light can be a monochromatic light; Also can be wavelength bandwidth minimal continuous light, as shown in Figure 1, when light 1 incides nanocrystal surface; Except not by the partial reflection of nanocrystalline covering surfaces; Some light 3,4 is absorbed through nanocrystalline inner the refraction, and the light intensity that causes reflecting weakens, thereby reflectivity can descend (said reflectivity is the ratio of all catoptrical intensity summations with incident intensity).Nanocrystalline size is big more, and thickness is also big more, and light also can be big more through nanocrystalline distance; The probability that absorbs also can be big more; So reflective light intensity can corresponding minimizing, thus can connect reflectivity and nanocrystalline size, at the silicon nanocrystal growth time during greater than 2 minutes; Reflectivity and growth time (being the size of silicon nanocrystal) are approximated to linear relationship (like Fig. 2-3), therefore can detect the nanocrystalline form situation of silicon chip surface through the size of reflectivity.
As shown in Figure 3, Fig. 3 is the method flow diagram that the online detection form of silicon nanocrystals of variation of reflection of monochromatic light rate is measured in utilization provided by the invention, and this method may further comprise the steps:
Step 1: prepare some silicon chips as substrate, in this each substrate surface tunneling medium layer of growing respectively; This tunneling medium layer is SiO
2Or Si
3N
4
Step 2: handle substrate surface with dilute hydrofluoric acid, nanocrystalline with the method for LPCVD again at this each substrate surface difference silicon growth layer;
Silicon growth layer is nanocrystalline respectively at each substrate surface, differs successively 0.5 minute at the growth time of each substrate surface, is respectively 1 minute, 1.5 minutes, 2 minutes, 2.5 minutes ....
Step 3: utilize wavelength to be incident to each substrate surface as incident light for the monochromatic light of 365nm; Because surfacing and pattern is different; Reflective light intensity will inevitably change, and writes down the reflectivity of the nanocrystalline silicon chip of various growth times, sets up the relational expression between growth time and the reflectivity;
Wavelength is that the monochromatic light of 365nm is produced by online thickness checkout equipment; Or with spectroscope white light is resolved into the monochromatic light of different wave length; And constitute continuous visible light, the intercepting wavelength is that near one section spectrum extremely narrow 365nm is as this monochromatic light then.The launching spot area is 2.7 μ m * 2.7 μ m.Reflectivity is all reflected light and the ratio of the light intensity of initial incident light.
Step 4: various silicon chips carry out the fragmentation analysis with ESEM and transmission electron microscope more than inciting somebody to action, and confirm the form that different growth times are nanocrystalline, set up different nanocrystalline forms and growth periods;
Step 5: integrating step 3 and step 4, nanocrystalline different shape and reflectivity are mapped, set up corresponding relational expression, thereby can confirm the nanocrystalline form of growth according to reflectivity, reach the purpose of fast detecting.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the method for an online detection form of silicon nanocrystals is characterized in that, this method comprises:
Step 1: prepare some silicon chips as substrate, in this each substrate surface tunneling medium layer of growing respectively;
Step 2: handle each substrate surface with dilute hydrofluoric acid, nanocrystalline with the method for LPCVD again at this each substrate surface difference silicon growth layer, form a plurality of nanocrystalline silicon chips;
Step 3: utilize wavelength to be incident to this a plurality of nanocrystalline silicon chips surface as incident light for the monochromatic light of 365nm; Because surfacing and pattern is different; Reflective light intensity will inevitably change; Write down the reflectivity of the nanocrystalline silicon chip of various growth times, set up the relational expression between growth time and the reflectivity;
Step 4: a plurality of nanocrystalline silicon chips carry out the fragmentation analysis with ESEM and transmission electron microscope more than inciting somebody to action, and confirm the form that different growth times are nanocrystalline, set up different nanocrystalline forms and growth periods;
Step 5: a plurality of nanocrystalline silicon chip different shapes and reflectivity are mapped, set up corresponding relational expression, thereby confirm the nanocrystalline form of growth according to reflectivity.
2. the method for online detection form of silicon nanocrystals according to claim 1 is characterized in that, tunneling medium layer described in the step 1 is SiO
2Or Si
3N
4
3. the method for online detection form of silicon nanocrystals according to claim 1 is characterized in that, silicon growth layer is nanocrystalline respectively at each substrate surface described in the step 2,, differs successively 0.5 minute since 1 minute at the growth time of each substrate surface.
4. the method for online detection form of silicon nanocrystals according to claim 1; It is characterized in that; Wavelength described in the step 3 is that the monochromatic light of 365nm is produced by online thickness checkout equipment; Or white light is resolved into the monochromatic light of different wave length with spectroscope, and and constituting continuous visible light, the intercepting wavelength is that near one section spectrum extremely narrow 365nm is as this monochromatic light then.
5. the method for online detection form of silicon nanocrystals according to claim 1 is characterized in that, the facula area of incident light described in the step 3 is 2.7 μ m * 2.7 μ m.
6. the method for online detection form of silicon nanocrystals according to claim 1 is characterized in that, reflectivity described in the step 3 is a reflected light and the ratio of the light intensity of initial incident light.
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| CN102486465B (en) * | 2010-12-06 | 2013-07-03 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering and etching and in-situ physical property analysis system |
| JP6069203B2 (en) * | 2011-08-30 | 2017-02-01 | 関西ペイント株式会社 | Method and apparatus for evaluating pigment dispersion |
| CN102593103B (en) * | 2012-03-01 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | The technology controlling and process monitoring method of nanocrystalline settled density, module and preparation method thereof |
| CN104891565B (en) * | 2015-05-08 | 2017-03-08 | 重庆大学 | A kind of on-line real-time measuremen the method controlling metatitanic acid particle growth in sulphuric acid legal system titanium dioxide process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040080741A1 (en) * | 1994-03-24 | 2004-04-29 | Norbert Marxer | Process and assembly for non-destructive surface inspections |
| CN1542452A (en) * | 2003-11-06 | 2004-11-03 | 中国科学院长春光学精密机械与物理研 | Preparation method of CdSe nano-crystalline composite liposome microcapsule bubble used for fluorescence immunity detection |
| US20050045977A1 (en) * | 2003-08-26 | 2005-03-03 | Chii-Wann Lin | Repeated structure of nanometer thin films with symmetric or asymmetric configuration for spr signal modulation |
| CN101365938A (en) * | 2005-12-19 | 2009-02-11 | 新加坡科技研究局 | Detection via switchable emission of nanocrystals |
-
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- 2009-02-25 CN CN 200910078556 patent/CN101813624B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040080741A1 (en) * | 1994-03-24 | 2004-04-29 | Norbert Marxer | Process and assembly for non-destructive surface inspections |
| US20050045977A1 (en) * | 2003-08-26 | 2005-03-03 | Chii-Wann Lin | Repeated structure of nanometer thin films with symmetric or asymmetric configuration for spr signal modulation |
| CN1542452A (en) * | 2003-11-06 | 2004-11-03 | 中国科学院长春光学精密机械与物理研 | Preparation method of CdSe nano-crystalline composite liposome microcapsule bubble used for fluorescence immunity detection |
| CN101365938A (en) * | 2005-12-19 | 2009-02-11 | 新加坡科技研究局 | Detection via switchable emission of nanocrystals |
Non-Patent Citations (2)
| Title |
|---|
| 管伟华 等.纳米晶非挥发性存储器研究进展.《纳米器件及技术》.2007,(第5期),225-230. * |
| 马瑞廷 等.尖晶石型纳米晶钴锌铁氧体的制备及其电磁和微波吸收性能.《纳米技术与精密工程》.2009,第7卷(第1期),15-19. * |
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