CN101812671A - Gas path device for metal organic chemical vapor deposition equipment - Google Patents
Gas path device for metal organic chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN101812671A CN101812671A CN201010033967A CN201010033967A CN101812671A CN 101812671 A CN101812671 A CN 101812671A CN 201010033967 A CN201010033967 A CN 201010033967A CN 201010033967 A CN201010033967 A CN 201010033967A CN 101812671 A CN101812671 A CN 101812671A
- Authority
- CN
- China
- Prior art keywords
- gas
- sub
- gas circuit
- valve
- gas path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a gas path device for metal organic chemical vapor deposition (MOCVD) equipment. The gas path device comprises a gas inlet and a plurality of groups of gas paths which are led out from the gas inlet and arranged in parallel, wherein each group of gas paths comprises a first sub gas path and a second sub gas path arranged in parallel, and each of the first sub gas path and the second sub gas path can be selectively communicated with a growth chamber and communicated with an emptying passage; when the gas passes through one group of air paths, the gas selectively flows through one of the first sub gas path and the second sub gas path in the group of air paths; and the first sub gas path is provided with a first flow meter, the second sub gas path is provided with a second flow meter, and the maximum measuring range of the first flow meter is greater than that of the second flow meter. The gas path device realizes precise control of the gas from large flow to small flow in the MOCVD equipment through the large measuring range flow meter and the small measuring range flow meter and the corresponding design of gas path switching so as to realize high-quality epitaxial growth of materials under different process conditions.
Description
Technical field
The present invention relates to semiconductor devices manufacturing technology field, particularly relate to a kind of gas path device that is used for metal organic chemical vapor deposition equipment.
Background technology
MOCVD (Metal Organic Chemical Vapor Deposition) equipment; it is metal-organic chemical vapor deposition equipment; it is the key equipment of compound semiconductor epitaxial investigation of materials and production; be particularly suitable for the large-scale industrial production of compound semiconductor functional structure material; be the irreplaceable core semiconductor equipment of other semiconductor devices; being the main means of producing semiconductor photoelectric device and microwave device material in the world today, is that the current information industry development, national defence new and high technology break through indispensable strategic high-tech semiconductor equipment.
With metal organic chemical vapor deposition (MOCVD) equipment growing film material, need various source materials usually and carry gas.Source material comprises metallorganics (M0) and gas source, it is the material that participates in chemical reaction and in resultant, contain this raw material composition, carry gas and comprise nitrogen, hydrogen and rare gas element etc., these gases only carry starting material and enter in the reaction chamber, and itself does not participate in chemical reaction.
Usually react starting material and carry gas and all transmit by pipeline, its flow is controlled by mass flowmeter (MFC), the through and off of gas are controlled by opening and closing of valve, and these gases enter reaction chamber through certain operation, realize the epitaxy of differing materials.
The flow control scope of common mass flowmeter is about 2%～100%.If using maximum range is 50 liters/minute under meter, feed gas be 1 liter/minute or littler in, under meter is uncontrollable and show this gas flow, makes in same gas circuit big flow can't realize to the direct conversion of Small Flow Control.Simultaneously, the control accuracy of under meter is relevant with the maximum range of this under meter, and is general at about 1% of maximum range.When so if the mass flowmeter range of selecting is excessive, be difficult to realize that control error can be very big under the accurate control, particularly low discharge situation to gas flow, thereby final crystalline quality that generates of influence.
Summary of the invention
Based on the problems referred to above the present invention is proposed.
The invention provides a kind of gas path device that is used for metal organic chemical vapor deposition equipment, can realize accurate control, thereby realize the high quality extension under differing materials, the different process requirement from big flow to small-flow gas.
According to an aspect of the present invention, a kind of gas path device that is used for metal organic chemical vapor deposition equipment, it comprises: the gas inlet; Many groups gas circuit of the parallel layout of drawing from described inlet, each group gas circuit comprises the parallel first sub-gas circuit and the second sub-gas circuit of arranging, each in the first sub-gas circuit and the second sub-gas circuit can both be optionally and growth room's connected sum and emptying channel connection.Wherein: gas is when one group of gas circuit, and gas-selectively ground flows through in the first sub-gas circuit and the second sub-gas circuit in this group gas circuit; And the first sub-gas circuit is provided with the first flow meter, and the second sub-gas circuit is provided with second under meter, and the maximum range of described first flow meter is greater than the maximum range of second under meter.
Alternatively, the maximum range of first flow meter be second under meter maximum range 10-100 doubly.Alternatively, the maximum range of first flow meter be the 1-100 liter/minute, the maximum range of second under meter be the 0.01-1 liter/minute.
Alternatively, the maximum range of the first flow meter on the first sub-gas circuit at least two group gas circuits differs from one another.Alternatively, the maximum range of second under meter on the second sub-gas circuit at least two group gas circuits differs from one another.
Alternatively, at least two group gas circuits are communicated with the growth room by same gas passage.
Further alternatively, in the first sub-gas circuit and the second sub-gas circuit each realizes opening and closing by separately valve, and in the first sub-gas circuit and the second sub-gas circuit each all the other valve by separately optionally with growth room's connected sum and emptying channel connection.Advantageously, each valve is an operated pneumatic valve, and described operated pneumatic valve is pneumatic bellows valve or pneumatic diaphragm valve.
Alternatively, the first sub-gas circuit and the second sub-gas circuit are connected to first switching valve, described first switching valve is used to make gas to select by the first sub-gas circuit or the second sub-gas circuit, and described gas path device also comprises second switching valve, the first sub-gas circuit and the second sub-gas circuit by described second switching valve optionally with growth room's connected sum and emptying channel connection.
Utilize technical scheme of the present invention, can one of be achieved as follows at least:
1) different reaction starting material is sent into reaction chamber respectively, can realize accurate control, thereby realize the high quality epitaxial growth under differing materials, the different process requirement from big flow to small-flow gas;
2) by quick switching, can be used for the precipitous super crystal lattice material of growth interface to valve;
3) this gas path device is applicable to all gas that can be used for the MOCVD extension.
Description of drawings
Fig. 1 is a first embodiment of the present invention synoptic diagram; With
Fig. 2 is a second embodiment of the present invention synoptic diagram.
Embodiment
Below by embodiment, and in conjunction with the accompanying drawings, technical scheme of the present invention is described in further detail.In specification sheets, same or analogous drawing reference numeral is indicated same or analogous parts.Following explanation to embodiment of the present invention is intended to present general inventive concept of the present invention is made an explanation with reference to accompanying drawing, and not should be understood to a kind of restriction of the present invention.
The gas path device that is used for metal organic chemical vapor deposition equipment according to the present invention comprises: gas inlet 0; Many groups gas circuit of the parallel layout of drawing from described inlet 0, each group gas circuit comprises the parallel first sub-gas circuit and the second sub-gas circuit of arranging, in the first sub-gas circuit and the second sub-gas circuit each can both be optionally and growth room's connected sum and emptying channel connection, wherein: gas is when one group of gas circuit, and gas-selectively ground flows through in the first sub-gas circuit and the second sub-gas circuit in this group gas circuit; And the first sub-gas circuit is provided with first flow meter 11,21 ... (n is a natural number to n1, preferably, n is the natural number less than 11), the second sub-gas circuit is provided with second under meter 12,22 ... n2, the maximum range of described first flow meter is greater than the maximum range of second under meter.
It should be noted that the inlet 0 here can be that gas container also can be a gas pipeline.
Alternatively, the first flow meter 11,21 ... the maximum range of n1 is second under meter 12,22 ... the 10-100 of the maximum range of n2 doubly.Alternatively, the maximum range of first flow meter be the 1-100 liter/minute, the maximum range of second under meter be the 0.01-1 liter/minute.
Alternatively, the maximum range of the first flow meter on the first sub-gas circuit at least two group gas circuits differs from one another.Alternatively, the maximum range of second under meter on the second sub-gas circuit at least two group gas circuits differs from one another.
Alternatively, at least two group gas circuits are communicated with the growth room by same gas passage.
Alternatively, in the first sub-gas circuit and the second sub-gas circuit each is by separately valve 13,23 ... n3,14,24 ... n4 realizes opening and closing, and each in the first sub-gas circuit and the second sub-gas circuit is the other valve 15,15 by separately all ... n5,16,26 ... n6 optionally with growth room's connected sum and emptying channel connection.Advantageously, each valve is an operated pneumatic valve, and described operated pneumatic valve is pneumatic bellows valve or pneumatic diaphragm valve.
Although do not illustrate in the accompanying drawings, the first sub-gas circuit and the second sub-gas circuit can be connected to first switching valve, described first switching valve is used to make gas to select by the first sub-gas circuit or the second sub-gas circuit, and described gas path device also can comprise second switching valve, the first sub-gas circuit and the second sub-gas circuit by described second switching valve optionally with growth room's connected sum and emptying channel connection.
Fig. 1 is a first embodiment of the present invention synoptic diagram, and it shows basic gas circuit design of the present invention.Gas path device comprises the first flow meter 11,21 of wide range ... second under meter 12,22 of n1, little range ... n2, the small-large flow meter is parallel arranged in twos, the operated pneumatic valve 13-16, the 23-26 that have pilot-gas to flow in the rear end of under meter ... n3-n6 is connected gas piping between under meter and valve.
It should be noted that valve 13,23 ... n3,14,24 ... n4 also can be arranged on the upstream of under meter, rather than is arranged on the downstream of under meter as shown in the drawing.
When the material require of extension fed the gas of big flow, gas 0 entered from entering the mouth, through first flow meter 11,21 ... n1, at this moment operated pneumatic valve 13,23 ... n3 opens, operated pneumatic valve 14,24 ... n4 closes.When gas need enter the growth room, operated pneumatic valve 15,15 ... n5 opens, operated pneumatic valve 16,26 ... n6 closes, and gas enters the growth room and participates in epitaxy; When gas does not need to enter the growth room, operated pneumatic valve 16,26 ... n6 opens, operated pneumatic valve 15,15 ... n5 closes, and gas is through the off-gas pump emptying.
When the material require of extension fed the gas of low discharge, gas 0 entered from entering the mouth, through under meter 12,22 ... n2, at this moment operated pneumatic valve 13,23 ... n3 closes, operated pneumatic valve 14,24 ... n4 opens.When gas need enter the growth room, operated pneumatic valve 15,15 ... n5 opens, operated pneumatic valve 16,26 ... n6 closes, and gas enters the growth room and participates in epitaxy; When gas does not need to enter the growth room, operated pneumatic valve 16,26 ... n6 opens, operated pneumatic valve 15,15 ... n5 closes, and gas is through the off-gas pump emptying.
In addition, also valve optionally can cut out to close one group of gas circuit.
Particularly, as shown in accompanying drawing 1, first and second under meters operated pneumatic valve of connecting respectively, in parallel again between these two seriess pipe, form first gas circuit in parallel; Two operated pneumatic valve parallel connections are arranged thereafter again, form second gas circuit in parallel; Two gas circuit in parallel connecting pipeline one-tenth series connection more finally constitute one group of gas circuit.By the switch combination of valve, realize gas through first flow meter or the control of second under meter, final to the growth room or the purpose of emptying.
Fig. 2 is a second embodiment of the present invention synoptic diagram.Referring to Fig. 2, and, under more accurate control gas circuit flow, particularly low discharge situation, gas circuit has been done following improvement in conjunction with Fig. 1: the under meter of parallel a plurality of different ranges on a certain gas circuit, in order to satisfy the purpose that reduces control error.
As the 1 road gas among Fig. 2, be subdivided into a, b, c three branch roads, under meter 12a, the 12b and the 12c that comprise under meter 11a, the 11b of wide range and 11c, little range respectively, the under meter of size range is parallel arranged in twos, be provided with operated pneumatic valve 13a to 16a, 13b to 16b and 13c to 16c that pilot-gas flows in the downstream of under meter, be connected gas piping between under meter and valve, a, b, c three branch road gases all pass through joint 1 before entering the growth room.
Suppose that under meter 11a, the 11b of wide range and the range of 11c are respectively 100,10,1 liters/minute, if its control accuracy is a unified standard with 1% of maximum range, then are respectively 1,0.1,0.01 liter/minute.Under atmospheric flow situation, when surpassing 10 liters/minute, can only select under meter 11a to come the pilot-gas flow, promptly select branch road a.If but gas flow be only need be no more than 1 liter/minute the time, three branch road gases all can be selected, control accuracy relatively, and obviously optimum selection is to come the pilot-gas flow by under meter 11c, promptly selects branch road c.
Equally, suppose that under meter 12a, the 12b of little range and the range of 12c are respectively 1,0.1,0.01 liter/minute, if its control accuracy is a unified standard with 1% of maximum range, then are respectively 10,1,0.1 ml/min.When gas flow need surpass 1 liter/minute, can only select under meter 12a to come the pilot-gas flow, promptly select branch road a.If but gas flow only need be no more than 0.01 liter/minute, this moment, three branch road gases all can be selected, and compared control accuracy, and obviously optimum selection is to come the pilot-gas flow by under meter 12c, promptly selects branch road c.
Equally, although in accompanying drawing 2, do not illustrate, the first sub-gas circuit and the second sub-gas circuit can be connected to first switching valve, described first switching valve is used to make gas to select by the first sub-gas circuit or the second sub-gas circuit, and described gas path device also can comprise second switching valve, the first sub-gas circuit and the second sub-gas circuit by described second switching valve optionally with growth room's connected sum and emptying channel connection.
According to the present invention, the needs of corresponding different flow gas can be selected the under meter of optimum control precision.Fig. 2 mainly is that 1 tunnel gas circuit wherein is refined as more multiple branch circuit than Fig. 1, increases the under meter of more different ranges, by the switch combination of valve, can select the accurate control path of under meter of suitable range, can optimize the control accuracy of gas flow.
In the present invention, based on variation, limit of range and the control accuracy of desired gas flow size, select gas by gas circuit (comprising branch road or sub-gas circuit) by the switch combination of valve.
Can feed each clock gas, for example nitrogen, hydrogen, ammonia, metal organic source, arsine, phosphine and rare gas element according to gas path device of the present invention.
Can allow to have simultaneously multichannel road gas to enter the people growth room according to gas path device of the present invention.
Although illustrated and described embodiments of the invention, for the ordinary skill in the art, be appreciated that without departing from the principles and spirit of the present invention and can change that scope of the present invention is limited by claims and equivalent thereof to these embodiment.
Claims (13)
1. gas path device that is used for metal organic chemical vapor deposition equipment comprises:
The gas inlet;
Many groups gas circuit of the parallel layout of drawing from described inlet, each group gas circuit comprises the parallel first sub-gas circuit and the second sub-gas circuit of arranging, each in the first sub-gas circuit and the second sub-gas circuit can both be optionally and growth room's connected sum and emptying channel connection,
It is characterized in that:
Gas is when one group of gas circuit, and gas-selectively ground flows through in the first sub-gas circuit and the second sub-gas circuit in this group gas circuit; And
The first sub-gas circuit is provided with the first flow meter, and the second sub-gas circuit is provided with second under meter, and the maximum range of described first flow meter is greater than the maximum range of second under meter.
2. gas path device as claimed in claim 1 is characterized in that:
The maximum range of first flow meter be second under meter maximum range 10-100 doubly.
3. gas path device as claimed in claim 1 is characterized in that:
The maximum range of first flow meter be the 1-100 liter/minute, the maximum range of second under meter be the 0.01-1 liter/minute.
4. gas path device as claimed in claim 1 is characterized in that:
The maximum range of the first flow meter on the first sub-gas circuit at least two group gas circuits differs from one another.
5. gas path device as claimed in claim 1 is characterized in that:
The maximum range of second under meter on the second sub-gas circuit at least two group gas circuits differs from one another.
6. as each described gas path device among the claim 1-5, it is characterized in that:
At least two group gas circuits are communicated with the growth room by same gas passage.
7. as each described gas path device among the claim 1-5, it is characterized in that:
In the first sub-gas circuit and the second sub-gas circuit each realizes opening and closing by separately valve, and in the first sub-gas circuit and the second sub-gas circuit each all the other valve by separately optionally with growth room's connected sum and emptying channel connection.
8. gas path device as claimed in claim 7 is characterized in that:
Each valve is an operated pneumatic valve, and described operated pneumatic valve is pneumatic bellows valve or pneumatic diaphragm valve.
9. gas path device as claimed in claim 7 is characterized in that:
One group of gas circuit is subdivided into three branch roads, final three branch road gases are intersected in a bit, again with growth room's connected sum and emptying channel connection, and the maximum range of the first flow meter of three branch roads is all different each other, and the maximum range of second under meter of three branch roads also differs from one another.
10. gas path device as claimed in claim 6 is characterized in that:
In the first sub-gas circuit and the second sub-gas circuit each realizes opening and closing by separately valve, and in the sub-gas circuit and the second sub-gas circuit each all the other valve by separately optionally with growth room's connected sum and emptying channel connection.
11. gas path device as claimed in claim 10 is characterized in that:
Each valve is an operated pneumatic valve, and described operated pneumatic valve is pneumatic bellows valve or pneumatic diaphragm valve.
12., it is characterized in that as each described gas path device among the claim 1-5:
The first sub-gas circuit and the second sub-gas circuit are connected to first switching valve, and described first switching valve is used to make gas to select by the first sub-gas circuit or the second sub-gas circuit, and
Described gas path device also comprises second switching valve, the first sub-gas circuit and the second sub-gas circuit by described second switching valve optionally with growth room's connected sum and emptying channel connection.
13. gas path device as claimed in claim 6 is characterized in that:
The first sub-gas circuit and the second sub-gas circuit are connected to first switching valve, and described first switching valve is used to make gas to select by the first sub-gas circuit or the second sub-gas circuit, and
Described gas path device also comprises second switching valve, the first sub-gas circuit and the second sub-gas circuit by described second switching valve optionally with growth room's connected sum and emptying channel connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100339671A CN101812671B (en) | 2010-01-07 | 2010-01-07 | Gas path device for metal organic chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100339671A CN101812671B (en) | 2010-01-07 | 2010-01-07 | Gas path device for metal organic chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101812671A true CN101812671A (en) | 2010-08-25 |
| CN101812671B CN101812671B (en) | 2012-06-06 |
Family
ID=42620036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010100339671A Active CN101812671B (en) | 2010-01-07 | 2010-01-07 | Gas path device for metal organic chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101812671B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014662A (en) * | 2011-09-20 | 2013-04-03 | 甘志银 | Gas path apparatus for precisely controlling reactant flow rate in chemical vapor deposition equipment |
| CN105846290A (en) * | 2016-06-22 | 2016-08-10 | 中国科学院光电研究院 | Quasi-molecule laser high-purity working gas distribution system and method |
| CN106881029A (en) * | 2017-03-10 | 2017-06-23 | 大连大特气体有限公司 | Manual-automatic integral gaseous mixture configures system |
| CN110777428A (en) * | 2019-09-23 | 2020-02-11 | 北京北方华创微电子装备有限公司 | Gas transportation system |
| CN111101115A (en) * | 2018-10-25 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Gas path switching device, control method thereof and semiconductor processing equipment |
| CN111188026A (en) * | 2018-11-14 | 2020-05-22 | 北京北方华创微电子装备有限公司 | Gas processing system, gas processing method and atomic layer deposition equipment |
| CN113502460A (en) * | 2021-09-09 | 2021-10-15 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor structure and semiconductor growth equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4260958A (en) * | 1978-10-30 | 1981-04-07 | United Technologies Corporation | Apparatus and method for deposition of electrical power in an electric discharge laser |
| JP2002309922A (en) * | 2001-04-16 | 2002-10-23 | Denso Corp | Exhaust emission purifier |
| CN101654773A (en) * | 2008-08-20 | 2010-02-24 | 中国科学院半导体研究所 | Metal organic chemical vapor deposition device |
-
2010
- 2010-01-07 CN CN2010100339671A patent/CN101812671B/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014662A (en) * | 2011-09-20 | 2013-04-03 | 甘志银 | Gas path apparatus for precisely controlling reactant flow rate in chemical vapor deposition equipment |
| CN105846290A (en) * | 2016-06-22 | 2016-08-10 | 中国科学院光电研究院 | Quasi-molecule laser high-purity working gas distribution system and method |
| CN106881029A (en) * | 2017-03-10 | 2017-06-23 | 大连大特气体有限公司 | Manual-automatic integral gaseous mixture configures system |
| CN106881029B (en) * | 2017-03-10 | 2022-10-18 | 大连大特气体有限公司 | Manual-automatic integrated mixed gas configuration system |
| CN111101115A (en) * | 2018-10-25 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Gas path switching device, control method thereof and semiconductor processing equipment |
| CN111101115B (en) * | 2018-10-25 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Gas path switching device, control method thereof and semiconductor processing equipment |
| CN111188026A (en) * | 2018-11-14 | 2020-05-22 | 北京北方华创微电子装备有限公司 | Gas processing system, gas processing method and atomic layer deposition equipment |
| CN110777428A (en) * | 2019-09-23 | 2020-02-11 | 北京北方华创微电子装备有限公司 | Gas transportation system |
| CN113502460A (en) * | 2021-09-09 | 2021-10-15 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor structure and semiconductor growth equipment |
| CN113502460B (en) * | 2021-09-09 | 2021-12-03 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor structure and semiconductor growth equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101812671B (en) | 2012-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101812671B (en) | Gas path device for metal organic chemical vapor deposition equipment | |
| JPH0429313A (en) | Device for producing semiconductor crystal | |
| US20130104996A1 (en) | Method for balancing gas flow supplying multiple cvd reactors | |
| CN1333438C (en) | Coaxial air intake for acquiring uniform wide-band gap semiconductor thin film | |
| CN105441904A (en) | Gas spray device, chemical vapor deposition device and method | |
| US9410244B2 (en) | Semiconductor processing apparatus including a plurality of reactors, and method for providing the same with process gas | |
| CN103882409B (en) | The adjustable gas path device of source conveying ratio of mixture | |
| US20140109831A1 (en) | Vapor deposition method and vapor deposition apparatus | |
| CN104498905B (en) | Air inlet for metal-organic chemical vapor deposition equipment reative cell is taken over a business | |
| CN102206814A (en) | Semiconductor film growth control device and semiconductor film growth control method | |
| CN101868113A (en) | Gas injection system and the method that is used to move gas injection system | |
| CN201560234U (en) | Chemical vapor deposition equipment integrating atomic layer deposition process | |
| CN102094186A (en) | Gas supply equipment | |
| CN103436860A (en) | Gas passage and gas intake device | |
| JP2007242875A (en) | Organometallic vapor phase growth apparatus, and vapor phase growth method using it | |
| JPH01130519A (en) | Mocvd crystal growing apparatus | |
| CN101368265B (en) | Gas path system of apparatus for preparing gallium nitride thin film | |
| CN101812673A (en) | Fan-shaped gas inlet spray head for metal organic chemical vapor deposition equipment | |
| CN101812674B (en) | Gas distribution device for metal organic chemical vapor deposition equipment | |
| JP5481416B2 (en) | Vapor growth apparatus and vapor growth method | |
| CN105463576A (en) | Apparatus for producing group III nitride crystal, and method for producing the same | |
| CN101457351B (en) | Gas distribution system and semi-conductor processing arrangements employing the same | |
| CN100357487C (en) | Structure of reaction chamber in multiple laminar flows in chemical vapor deposition equipment for metal organic matter | |
| CN110777428B (en) | Gas transportation system | |
| CN202400967U (en) | Comprehensive air supply duct of glass coating bin sputtering chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GUANGDONG ZHONGKE HONGWEI SEMICONDUCTOR EQUIPMENT Free format text: FORMER OWNER: SEMICONDUCTOR INST., CHINESE ACADEMY OF SCIENCES Effective date: 20120731 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100083 HAIDIAN, BEIJING TO: 510530 GUANGZHOU, GUANGDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120731 Address after: 510530, No. 11, Kaiyuan Avenue, Science Town, Guangzhou hi tech Industrial Development Zone, Guangdong, A4 Patentee after: MTM SEMICONDUCTOR EQUIPMENT Co.,Ltd. Address before: 100083 Beijing Qinghua East Road, Haidian District, No. 35 Patentee before: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20230830 Address after: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee after: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES Address before: The first floor of Building A4, No. 11 Kaiyuan Avenue, Science City, High tech Industrial Development Zone, Guangzhou, Guangdong Province, 510530 Patentee before: MTM SEMICONDUCTOR EQUIPMENT Co.,Ltd. |
|
| TR01 | Transfer of patent right |