CN101800214B - Construction method of anti-electromagnetic interference electronic module - Google Patents
Construction method of anti-electromagnetic interference electronic module Download PDFInfo
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- CN101800214B CN101800214B CN2009100062539A CN200910006253A CN101800214B CN 101800214 B CN101800214 B CN 101800214B CN 2009100062539 A CN2009100062539 A CN 2009100062539A CN 200910006253 A CN200910006253 A CN 200910006253A CN 101800214 B CN101800214 B CN 101800214B
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- electronic module
- support plate
- electromagnetic interference
- construction method
- colloid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention relates to a construction method of an anti-electromagnetic interference electronic module, which comprises the following steps: after a glue sealing technology for constructing electronic modules, cutting downwards along the boundaries of the electronic modules from a glue body on a supporting board until cutting off a part of ground conductors on the supporting board, wherein the supporting board is not cut off; thus, forming a plurality of cutting grooves on the glue body; then, sputtering the supporting board; plating a metal layer on the surfaces of the glue body and the cutting grooves evenly to enable the metal layer to be connected with the ground conductor of the supporting board; finally, carrying out the second cutting step, cutting off the supporting board along the cutting grooves, and completing the construction of a plurality of single electronic modules. Because the metal layer of the glue body of each electronic module is electrically connected with the ground conductor of the supporting board, the electronic module can be used for resisting electromagnetic interference.
Description
Technical field
The present invention relates to a kind of construction method of electronic module, particularly relate to a kind of construction method with anti-electromagnetic interference electronic module.
Background technology
Because the development of semiconductor technology and semiconductor packaging, make final component products miniaturization, thin typeization more behind the present semi-conductive electronic component structure dress; Also make present electronic product have the ability again towards more frivolous direction design.
But, after the electronic component miniaturization,, cause the signal phase mutual interference between the lead, therefore the line design that will set up stabilization signal on the contrary because the distance between the lead furthers; In addition, miniaturized electric sub-element partly particularly is applied to the electronic module of medium-high frequency section or high band, responds to the external electromagnetic signal easily and produces misoperation, therefore use the manufacturer of these electronic modules, all must in electronic product, add the structure of anti-electromagnetic interference at last; But taken the electronic product volume inside thus.
As shown in the above description, how adding the method for making anti-electromagnetic interference structure in the semi-conductor packaging technology now, also be the key that helps to dwindle future the electronic product size.
Summary of the invention
The objective of the invention is to, overcome the defective of the construction method existence of existing electronic module, and a kind of new construction method with anti-electromagnetic interference electronic module, technical problem to be solved are provided is the function that has anti-electromagnetic interference after making electronic module structure dress finish.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of construction method according to the present invention's proposition with anti-electromagnetic interference electronic module, it is characterized in that it may further comprise the steps: provide the electronic module semi-finished product after the sealing, wherein these semi-finished product comprise a support plate, most wafer and colloid, this support plate includes most conductor area, each conductor area is provided with at least one wafer and includes at least one earth lead, this earth lead extends to place, adjacent wires zone boundary, and this colloid is overlying on support plate and the wafer comprehensively; Along conductor area border cutting semi-finished product colloid and part support plate, form the staggered profile groove of most ranks, make the earth lead of each conductor area expose; The semi-finished product that the sputter previous step is rapid make colloid surface and profile groove inwall evenly plate a metal level, wherein the metal level in the profile groove with respectively expose earth lead and expose; And along profile groove cut-out support plate, with most independent electronic modules of moulding.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid construction method with anti-electromagnetic interference electronic module before the first road cutting step, further comprises the laser engraving step, and this laser engraving step is the corresponding colloid upper surface with each conductor area of laser engraving, to form a concavo-convex sign pattern.
Aforesaid construction method with anti-electromagnetic interference electronic module, wherein said support plate upper surface forms at least one ground path, with the border of extension with at least one adjacent wires zone.
Aforesaid construction method with anti-electromagnetic interference electronic module, wherein said support plate lower surface is formed with at least one ground path, and extend to border with at least one adjacent wires zone, and this support plate is to being formed with the metal perforation in the ground path place, and this metal perforation is positioned at the adjacent wires zone boundary.
Aforesaid construction method with anti-electromagnetic interference electronic module, wherein said wafer comprises the IC wafer.
Aforesaid construction method with anti-electromagnetic interference electronic module, wherein said wafer comprises the surface adhesion type element.
Aforesaid construction method with anti-electromagnetic interference electronic module, wherein said wafer comprises the surface adhesion type element.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above,, the invention provides a kind of construction method, include following steps: the electronic module semi-finished product after the sealing are provided with anti-electromagnetic interference electronic module for achieving the above object; Along conductor area border cutting semi-finished product colloid and part support plate, form the staggered profile groove of most ranks, make the earth lead of each conductor area expose; The semi-finished product that the sputter previous step is rapid make colloid surface and profile groove inwall evenly plate a metal level, wherein the metal level in the profile groove with respectively expose earth lead and expose; And along profile groove cut-out support plate, with most independent electronic modules of moulding.
By technique scheme, the construction method that the present invention has anti-electromagnetic interference electronic module has following advantage and beneficial effect at least: the invention described above mainly designs the earth lead in each conductor area on the support plate and extends to boundary with at least one adjacent wires zone, cooperate secondary cut step and a sputter step, can form metal level at the colloid upper surface, and this metal level is guaranteed the earth lead corresponding with it again and is connected, and has the effect of anti-electromagnetic interference.
The present invention's time purpose provides the electronic module construction method that a kind of metalloid branding indicates pattern, promptly before the first road cutting step, earlier with the laser engraving colloid surface, to form a concavo-convex sign pattern, carries out the first road cutting step again; Thus, wait to finish the sputter step after, layer on surface of metal can show concavo-convex sign pattern equally on the colloid, presents the sign pattern of metal branding impression; Be with, use the sign pattern after the present invention needn't worry to make the electronic module finished product.
In sum, the present invention is relevant a kind of construction method with anti-electromagnetic interference electronic module, is main behind the sealing adhesive process of electronic module structure dress, cuts downwards along each electronic module border from support plate gluing body, till incision support plate upper part earth lead, promptly do not cut and wear support plate; So promptly on colloid, be formed with most roads profile groove, again support plate carried out sputter afterwards, plate a metal level at colloid and profile groove surface equably, make this metal level be connected with the earth lead of support plate; At last, carry out the second road cutting step again, promptly support plate is cut and worn, finish most independently electronic module structure dresses along each profile groove; Because the earth lead of metal level and its support plate is electrically connected on each electronic module colloid, use so can make anti-electromagnetic interference.The present invention has obvious improvement technically, has tangible good effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is used for a kind of schematic top plan view that is provided with the support plate of wafer of the present invention.
Fig. 2 is a wherein conductor area schematic top plan view figure of Fig. 1.
Fig. 3 is the generalized section of first each step of preferred embodiment of construction method of the present invention.
Fig. 4 is the floor map of looking up that is used for another kind of support plate of the present invention.
Fig. 5 is a wherein conductor area face upwarding view of Fig. 4.
Fig. 6 is the generalized section of second each step of preferred embodiment of construction method of the present invention.
Fig. 7 is the part sectioned view that the present invention makes final electronic module.
10: support plate 101: conductor area
102: border 11: upper surface
12: earth connection 13: lower surface
15: metal perforation 16: colloid
161: profile groove 162: pattern
17: metal level 20: wafer
30: electronic module 31: pattern
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of the construction method with anti-electromagnetic interference electronic module, step, feature and effect thereof that foundation the present invention is proposed are elaborated.
See also shown in Fig. 1, Fig. 2 and Fig. 3 A, plan view from above for the employed a kind of support plate 10 of construction method of the present invention, it includes the conductor area 101 that majority is arranged, each conductor area 101 upper and lower surface forms signal line and ground path 12 respectively, and wherein upper surface is for fixing at least one wafer 20 usefulness; In the present embodiment, at least one ground path 12 of this upper surface is the borders 102 of extending respectively with at least one adjacent wires zone 101.
See also shown in Fig. 2, Fig. 5 and Fig. 6 A, flat sheet of the bottom view for the employed another kind of support plate 10a of construction method of the present invention, it includes the conductor area 101 that majority is arranged, each conductor area 101 upper and lower surface forms signal line and ground path 12 respectively, and wherein upper surface is to use for fixing at least one wafer; In the present embodiment, at least one ground path 12 of this lower surface is the border 102 that extends to at least one adjacent wires zone 101, and to being formed with metal perforation 15 in ground path 102 places, promptly this metal perforation 15 is positioned at the border 102 in adjacent wires zone 101.
Above-mentioned wafer is to include IC wafer and/or surface adhesion type element.
Seeing also among Fig. 3 shown in the A to D, is the generalized section of first each step of preferred embodiment of construction method of the present invention.The construction method with anti-electromagnetic interference electronic module of the present invention's first preferred embodiment, it includes following steps:
Electronic module semi-finished product after one sealing are provided; Wherein these semi-finished product are that support plate shown in Figure 1 10 is carried out the sealing step, and promptly colloid 16 is to be overlying on support plate 10 upper surfaces comprehensively, and with wafer 20 involutions in wherein;
102 cutting semi-finished product colloids 16 and partly support plate 10 downwards form the staggered profile groove 161 of most ranks along the conductor area border, make the earth lead 12 of each conductor area 10 expose;
The semi-finished product that the sputter previous step is rapid make colloid 16 surfaces and profile groove 161 inwalls evenly plate a metal level 17, and wherein the metal levels 17 in the profile groove 161 are and respectively expose earth lead 12 and expose; And
Cut off support plate 10 along profile groove, with most independent electronic modules 30 of moulding.
Seeing also among Fig. 6 shown in the A to D, is the generalized section of second each step of preferred embodiment of construction method of the present invention.The construction method of the present invention's second preferred embodiment, it includes following steps:
Electronic module semi-finished product after one sealing are provided; Wherein these semi-finished product are that support plate 10a shown in Figure 1 is carried out the sealing step, and promptly colloid 16 is to be overlying on support plate 10a upper surface comprehensively, and with wafer 20 involutions in wherein;
102 cut semi-finished product colloid 16, part support plate 101 and metal perforation 15 thereof downwards along the conductor area border, form the staggered profile groove 161 of most ranks, and order exposes with the metal perforation 15 part sidewalls of each conductor area 101 of metal;
The semi-finished product that the sputter previous step is rapid make colloid 16 surfaces and profile groove 161 inwalls evenly plate a metal level 17, and so the metal level 17 in this profile groove 161 promptly is connected with each exposed metal perforation 15 side; And
Cut off support plate 10a along profile groove, with most independent electronic modules 30 of moulding.
By above-mentioned first and second preferred embodiment as can be known, the present invention mainly makes the earth lead in each conductor area on the support plate extend to boundary with at least one adjacent wires zone, so can cooperate a hemisection, sputter and to cut step entirely, metal level is formed at the upper surface of colloid, and make metal level directly be connected or see through the metal perforation and connect with the ground path of each conductor area, when allowing electronic module be soldered on the circuit board, its metal level is electrically connected to the earth terminal of circuit board by ground path, and has the effect of anti-electromagnetic interference.
In addition, for making the present invention carry out follow-up sign pattern action easily, see also shown in Figure 7, promptly before the first road cutting step of the various embodiments described above, elder generation is with colloid 16 upper surfaces of corresponding each conductor area of laser engraving, to form a concavo-convex sign pattern 162, just carry out the first road cutting step afterwards; Thus, wait to finish the sputter step after, metal level 17 surfaces can show concavo-convex sign pattern equally on the colloid 16, present the sign pattern of metal branding impression; Be with, use the sign pattern 31 after the present invention needn't worry to make electronic module 30 finished products.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (7)
1. construction method with anti-electromagnetic interference electronic module is characterized in that it may further comprise the steps:
Electronic module semi-finished product after one sealing are provided; Wherein these semi-finished product comprise a support plate, most wafer and colloid; This support plate includes most conductor area, and each conductor area is provided with at least one wafer and includes at least one earth lead, and this earth lead extends to place, adjacent wires zone boundary, and this colloid is overlying on support plate and the wafer comprehensively;
Along conductor area border cutting colloid and part support plate, form most the profile grooves that ranks are staggered, make the earth lead of each conductor area expose;
The semi-finished product that the sputter previous step is rapid make colloid surface and profile groove inwall evenly plate a metal level, wherein the metal level in the profile groove with respectively expose earth lead and expose; And
Cut off support plate along profile groove, with most independent electronic modules of moulding.
2. the construction method with anti-electromagnetic interference electronic module according to claim 1, it is characterized in that before conductor area border cutting colloid and part support plate step, further comprise the laser engraving step, this laser engraving step is the corresponding colloid upper surface with each conductor area of laser engraving, to form a concavo-convex sign pattern.
3. the construction method with anti-electromagnetic interference electronic module according to claim 1 and 2 is characterized in that wherein said support plate upper surface forms at least one ground path, with the border of extension with at least one adjacent wires zone.
4. the construction method with anti-electromagnetic interference electronic module according to claim 1 and 2, it is characterized in that wherein said support plate lower surface is formed with at least one ground path, and extend to border with at least one adjacent wires zone, and this support plate is to being formed with the metal perforation in the ground path place, and this metal perforation is positioned at the adjacent wires zone boundary.
5. the construction method with anti-electromagnetic interference electronic module according to claim 1 and 2 is characterized in that wherein said wafer comprises the IC wafer.
6. the construction method with anti-electromagnetic interference electronic module according to claim 1 and 2 is characterized in that wherein said wafer comprises the surface adhesion type element.
7. the construction method with anti-electromagnetic interference electronic module according to claim 5 is characterized in that wherein said wafer comprises the surface adhesion type element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100062539A CN101800214B (en) | 2009-02-06 | 2009-02-06 | Construction method of anti-electromagnetic interference electronic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100062539A CN101800214B (en) | 2009-02-06 | 2009-02-06 | Construction method of anti-electromagnetic interference electronic module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101800214A CN101800214A (en) | 2010-08-11 |
| CN101800214B true CN101800214B (en) | 2011-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009100062539A Expired - Fee Related CN101800214B (en) | 2009-02-06 | 2009-02-06 | Construction method of anti-electromagnetic interference electronic module |
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| CN (1) | CN101800214B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013161831A (en) * | 2012-02-01 | 2013-08-19 | Mitsumi Electric Co Ltd | Electronic module and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2893977Y (en) * | 2006-04-05 | 2007-04-25 | 博罗冲压精密工业有限公司 | Electronic card connector |
| CN2931785Y (en) * | 2006-07-14 | 2007-08-08 | 周爱梅 | High temperature testing leads |
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- 2009-02-06 CN CN2009100062539A patent/CN101800214B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2893977Y (en) * | 2006-04-05 | 2007-04-25 | 博罗冲压精密工业有限公司 | Electronic card connector |
| CN2931785Y (en) * | 2006-07-14 | 2007-08-08 | 周爱梅 | High temperature testing leads |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2008-28218A 2008.02.07 |
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| CN101800214A (en) | 2010-08-11 |
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