CN101799443A - Method for preparing multiaperture silicon substrate tungsten oxide nanometer thin film gas sensitive transducer - Google Patents
Method for preparing multiaperture silicon substrate tungsten oxide nanometer thin film gas sensitive transducer Download PDFInfo
- Publication number
- CN101799443A CN101799443A CN201010125134A CN201010125134A CN101799443A CN 101799443 A CN101799443 A CN 101799443A CN 201010125134 A CN201010125134 A CN 201010125134A CN 201010125134 A CN201010125134 A CN 201010125134A CN 101799443 A CN101799443 A CN 101799443A
- Authority
- CN
- China
- Prior art keywords
- porous silicon
- thin film
- base
- gas
- sensitive transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a method for preparing a multiaperture silicon substrate WO3 nanometer thin film gas sensitive transducer. The step comprises that: (1) a multiaperture silicon layer substrate is prepared, (2) a multiaperture silicon substrate WO3 nanometer thin film is prepared, (3) the prepared multiaperture silicon substrate WO3 nanometer thin film is placed in a 400 to 600 degrees centigrade high temperature heating furnace, (4) the prepared WO3 nanometer thin film is placed in the vacuum chamber of a UHV target magnetic control sputtering device to plate an electrode and the multiaperture silicon substrate WO3 nanometer thin film gas sensitive transducer is obtained. The invention provides the method for preparing the multiaperture silicon substrate tungsten oxide nanometer thin film gas sensitive transducer which has easy control, simple technology, low work temperature (room temperature) and high sensitivity.
Description
Technical field
The invention relates to preparation tungsten oxide (WO
3) nanometer thin film gas sensitive transducer, relating in particular to the porous silicon is substrate preparation WO
3The method of nanometer thin film gas sensitive transducer.
Background technology
WO
3Gas sensitive is because to NO
x, NH
3Short Deng gas sensitivity height, response time and release time, be easy to measure and be considered to one of tool application prospect and gas sensitive of development prospect with control, advantage such as cheap, become new concern of scientific and technical personnel and research focus.Yet WO
3This shortcoming of gas sensor working temperature height (about 250 ℃) is that the integrated microminaturization of sensor-based system has increased complicacy and instability, becomes the obstacle that the preparation low-power dissipation system must be gone beyond.Scientific and technical personnel are being devoted to reduce the research of its working temperature always for this reason, and simultaneously (porous silicon PS) also causes scientific research personnel's concern to novel room temperature gas sensitive porous silicon.Porous silicon is a kind of material of the poriness open structure with bigger serface that is formed by etching at silicon chip surface, has very high chemical activity, and its electric property has sensitivity characteristic to ammonia, is a kind of very potential novel room temperature gas sensitive.But there are shortcomings such as sensitivity is lower slightly, reaction velocity is slow, release time is long in the porous silicon gas sensor.
Enhancing along with environmental consciousness, people have higher requirement to gas sensor, and some experts and scholars proposes that the two combines the gas sensor of the low working temperature of research and development, high sensitivity, fast-response with metal oxide semiconductor material and porous silicon gas sensitive in recent years.The founder V.M.Arakelyan of this method, V.E.Galstyan etc. have delivered in " Physica E " 38 phases in 2007 and have been entitled as " Hydrogen sensitive gas sensor based on porous silicon/TiO
2-xStructure " paper, adopt electron-beam vapor deposition method with TiO in the literary composition
2-xBe deposited on the porous silicon layer surface and form PS/TiO
2-xStructure has been studied it to H
2Sensitivity characteristic, find that this method has improved the porous silicon gas sensor at room temperature to H
2Sensitivity, but the improvement degree is little.Based on above analysis, basic to the existing research of understanding and applicant place seminar of key issue in the novel sensor research and development of being touched upon to domestic and international present Research, the present invention adopts the double flute electrochemical erosion method to prepare porous silicon layer, utilizes the facing-target magnetron sputtering system legal system to be equipped with WO
3Nano thin-film, proposing with the porous silicon is the tungsten oxide (WO of substrate
3) research of nanometer thin film gas sensitive transducer, develop a kind of novel room temperature gas sensor with higher sensitivity.
Summary of the invention
The objective of the invention is to overcome existing WO
3Gas sensor working temperature height (about 200 ℃), there is the low shortcoming of sensitivity in the porous silicon gas sensor, provides that a kind of preparation is easy to control, technology is simple, working temperature is low (room temperature), WO at the bottom of the highly sensitive porous silicon-base
3The method of nanometer thin film gas sensitive transducer.
WO at the bottom of the preparation porous silicon-base of the present invention
3The method of nanometer thin film gas sensitive transducer has following steps:
(1) preparation porous silicon layer substrate:
Adopt the p of double flute electrochemical erosion method at single-sided polishing
+Monocrystalline silicon sheet surface prepares porous silicon layer, used corrosive liquid is the mixed liquor of 1: 1 hydrofluorite of volume ratio (40%) and absolute ethyl alcohol, apply the size of corrosion electric current density and porosity, the thickness that etching time changes porous silicon layer by control, the corrosion electric current density that applies is 20～80mA/cm
2, etching time is 5～30min;
(2) preparation WO
3Nano thin-film:
The porous silicon layer substrate that step (1) is made places the vacuum chamber of ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% tungsten as target, concrete process conditions are: base vacuum degree (2～4) * 10
-4Pa, operating air pressure 1.0～2.0Pa, working gas (argon gas, purity 99.9%) is 9: 1～1: 9 with the ratio of reacting gas (oxygen, purity 99.9%) flow, sputtering power 60～100W, sputtering time 2～30min, substrate temperature are the chamber;
(3) annealing in process
WO at the bottom of the porous silicon-base that step (2) is made
3Nano thin-film places in the high-temperature heater, and the annealing in process environment is an atmospheric environment, and the annealing in process temperature is 400～600 ℃, and the annealing in process time is 2～4h, then with the stove natural cooling;
(4) plated electrode
The WO that step (3) is made
3Nano thin-film places the vacuum chamber of ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% metal platinum as target, with quality purity be 99.999% argon gas as working gas, base vacuum degree (2.0～7.0) * 10
-4Pa, sputter operating air pressure 2Pa, sputtering time 8min, Ar gas flow 24ml/min is at WO
3The nano thin-film surface deposition forms two square Pt electrodes, makes WO at the bottom of the porous silicon-base
3Nanometer thin film gas sensitive transducer.
The porous silicon layer aperture size of described step (1) is about 10～20nm, and the degree of depth is 20～80 μ m, and porosity is 50～76.80%.
The vacuum chamber of the ultrahigh vacuum facing-target magnetron sputtering system equipment of described step (2), step (4) is the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment.
The minitype digital temperature controller is adopted in the annealing temperature control of described step (3).
The invention has the beneficial effects as follows, provide a kind of and be easy to control, technology simply prepares WO at the bottom of the porous silicon-base
3The method of nanometer thin film gas sensitive transducer, the gas sensor working temperature low (room temperature) of this method preparation, highly sensitive.
Description of drawings
Fig. 1 is that embodiment 1 is at room temperature to 50ppmNH
3The sensitivity characteristic curve map;
Fig. 2 is that embodiment 2 is at room temperature to 50ppmNH
3The sensitivity characteristic curve map.
Embodiment
The raw materials used commercially available chemical pure raw material that adopts routine of the present invention.
Embodiment 1
(1) preparation porous silicon-base bottom technique condition: with the p of single-sided polishing
+(100) monocrystalline silicon piece (380 ± 10 μ m, 0.009～0.12 Ω cm) cuts into the rectangle substrate that is of a size of 2.4cm * 0.9cm, adopts the double flute electrochemical erosion method at its surface preparation porous silicon layer.Used corrosive liquid be volume ratio 1: 1 the mixed liquor of hydrofluorite (40%) and absolute ethyl alcohol, the corrosion electric current density that applies is 80mA/cm
2, etching time is 30min.Wherein porous silicon layer area size is 1.6cm * 0.4cm, in order to being coated with WO
3Nano thin-film.
(2) place the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment at the bottom of the porous silicon-base that step (1) is made, adopt quality purity be 99.995% tungsten as target, concrete process conditions are: base vacuum degree 4.0 * 10
-4Pa, operating air pressure 1.0Pa, working gas (argon gas, purity 99.9%) is 1: 1 with the ratio of reacting gas (oxygen, purity 99.9%) flow, sputtering power 80W, sputtering time 5min, substrate temperature is a room temperature, prepares WO
3Nano thin-film.
(3) WO that step (2) is made
3Nano thin-film places in the annealing furnace, and anneal environment is an atmospheric environment, and the capping of annealing furnace can be enclosed in print in the metastable annealing atmosphere preferably, but owing to be not complete airtight container, also inevitably is subjected to the influence of external environment.The minitype digital temperature controller is adopted in temperature control.Annealing temperature is set at 400 ℃, and the annealing heat treatment time is 4h.
(4) WO at the bottom of the porous silicon-base that step (3) is made
3Nano thin-film places the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% metal platinum as target, with quality purity be 99.999% argon gas as working gas, the base vacuum degree is 5.0 * 10
-4Pa, sputter operating air pressure are 2Pa, and sputtering time is 8min, and the Ar gas flow is 24ml/min, at WO
3The nanometer particle film surface deposition forms two square Pt electrodes.
WO at the bottom of the porous silicon-base that embodiment 1 makes
3Nano thin-film is at room temperature to 50ppmNH
3Sensitivity be 18.7, be 15/27min response/release time.
Embodiment 1 is at room temperature to 50ppmNH
3The sensitivity characteristic curve as shown in Figure 1.
Embodiment 2
(1) preparation porous silicon-base bottom technique condition: with the p of single-sided polishing
+(100) monocrystalline silicon piece (380 ± 10 μ m, 0.009～0.12 Ω cm) cuts into the rectangle substrate that is of a size of 2.4cm * 0.9cm, adopts the double flute electrochemical erosion method at its surface preparation porous silicon layer.Used corrosive liquid be volume ratio 1: 1 the mixed liquor of hydrofluorite (40%) and absolute ethyl alcohol, the corrosion electric current density that applies is 80mA/cm
2, etching time is 30min.Wherein porous silicon layer area size is 1.6cm * 0.4cm, in order to being coated with WO
3Nano thin-film;
(2) place the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment at the bottom of the porous silicon-base that step (1) is made, adopt quality purity be 99.995% tungsten as target, concrete process conditions are: base vacuum degree 2.0 * 10
-4Pa, operating air pressure 1.0Pa, working gas (argon gas, purity 99.9%) is 1: 1 with the ratio of reacting gas (oxygen, purity 99.9%) flow, sputtering power 80W, sputtering time 30min, substrate temperature is a room temperature, prepares WO
3Nano thin-film.
(3) WO that step (2) is made
3Nano thin-film places in the annealing furnace, and anneal environment is an atmospheric environment, and the capping of annealing furnace can be enclosed in print in the metastable annealing atmosphere preferably, but owing to be not complete airtight container, also inevitably is subjected to the influence of external environment.The minitype digital temperature controller is adopted in temperature control.Annealing temperature is set at 450 ℃, and the annealing heat treatment time is 4h.
(4) WO at the bottom of the porous silicon-base that step (3) is made
3Nano thin-film places the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% metal platinum as target, with quality purity be 99.999% argon gas as working gas, the base vacuum degree is 4.0 * 10
-4Pa, sputter operating air pressure are 2Pa, and sputtering time is 8min, and the Ar gas flow is 24ml/min, at WO
3The nanometer particle film surface deposition forms two square Pt electrodes.
WO at the bottom of the porous silicon-base that embodiment 2 makes
3Nano thin-film is at room temperature to 50ppmNH
3Sensitivity be 17.2, be 7/29min. response/release time
Embodiment 2 is at room temperature to 50ppmNH
3The sensitivity characteristic curve as shown in Figure 2.
Embodiment 3
(1) preparation porous silicon-base bottom technique condition: with the p of single-sided polishing
+(100) monocrystalline silicon piece (380 ± 10 μ m, 0.009～0.12 Ω cm) cuts into the rectangle substrate that is of a size of 2.4cm * 0.9cm, adopts the double flute electrochemical erosion method at its surface preparation porous silicon layer.Used corrosive liquid be volume ratio 1: 1 the mixed liquor of hydrofluorite (40%) and absolute ethyl alcohol, the corrosion electric current density that applies is 80mA/cm
2, etching time is 20min.Wherein porous silicon layer area size is 1.6cm * 0.4cm, in order to being coated with WO
3Nano thin-film;
(2) place the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment at the bottom of the porous silicon-base that step (1) is made,
Adopt quality purity be 99.995% tungsten as target, concrete process conditions are: base vacuum degree 3.0 * 10
-4Pa, operating air pressure 1.5Pa, working gas (argon gas, purity 99.9%) is 7: 3 with the ratio of reacting gas (oxygen, purity 99.9%) flow, sputtering power 100W, sputtering time 2min, substrate temperature is a room temperature, prepares WO
3Nano thin-film.
(3) WO that step (2) is made
3Nano thin-film places in the annealing furnace, and anneal environment is an atmospheric environment, and the capping of annealing furnace can be enclosed in print in the metastable annealing atmosphere preferably, but owing to be not complete airtight container, also inevitably is subjected to the influence of external environment.The minitype digital temperature controller is adopted in temperature control.Annealing temperature is set at 500 ℃, and the annealing heat treatment time is 2h.
(4) WO at the bottom of the porous silicon-base that step (3) is made
3Nano thin-film places the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% metal platinum as target, with quality purity be 99.999% argon gas as working gas, the base vacuum degree is 3.0 * 10
-4Pa, sputter operating air pressure are 2Pa, and sputtering time is 8min, and the Ar gas flow is 24ml/min, at WO
3The nanometer particle film surface deposition forms two square Pt electrodes.
WO at the bottom of the porous silicon-base that embodiment 3 makes
3Nano thin-film is at room temperature to 50ppmNH
3Sensitivity be 9.67.
Embodiment 4
(1) preparation porous silicon-base bottom technique condition: with the p of single-sided polishing
+(100) monocrystalline silicon piece (380 ± 10 μ m, 0.009～0.12 Ω cm) cuts into the rectangle substrate that is of a size of 2.4cm * 0.9cm, adopts the double flute electrochemical erosion method at its surface preparation porous silicon layer.Used corrosive liquid be volume ratio 1: 1 the mixed liquor of hydrofluorite (40%) and absolute ethyl alcohol, the corrosion electric current density that applies is 40mA/cm
2, etching time is 10min.Wherein porous silicon layer area size is 1.6cm * 0.4cm, in order to being coated with WO
3Nano thin-film;
(2) place the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment at the bottom of the porous silicon-base that step (1) is made,
Adopt quality purity be 99.995% tungsten as target, concrete process conditions are: base vacuum degree 4.0 * 10
-4Pa, operating air pressure 2.0Pa, working gas (argon gas, purity 99.9%) is 9: 1 with the ratio of reacting gas (oxygen, purity 99.9%) flow, sputtering power 60W, sputtering time 20min, substrate temperature is a room temperature, prepares WO
3Nano thin-film.
(3) WO that step (2) is made
3Nano thin-film places in the annealing furnace, and anneal environment is an atmospheric environment, and the capping of annealing furnace can be enclosed in print in the metastable annealing atmosphere preferably, but owing to be not complete airtight container, also inevitably is subjected to the influence of external environment.The minitype digital temperature controller is adopted in temperature control.Annealing temperature is set at 600 ℃, and the annealing heat treatment time is 3h.
(4) WO at the bottom of the porous silicon-base that step (3) is made
3Nano thin-film places the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% metal platinum as target, with quality purity be 99.999% argon gas as working gas, the base vacuum degree is 2.0 * 10
-4Pa, sputter operating air pressure are 2Pa, and sputtering time is 8min, and the Ar gas flow is 24ml/min, at WO
3The nanometer particle film surface deposition forms two square Pt electrodes.
WO at the bottom of the porous silicon-base that embodiment 4 makes
3Nano thin-film is at room temperature to 50ppmNH
3Sensitivity be 7.0.
Embodiment 5
(1) preparation porous silicon-base bottom technique condition: with the p of single-sided polishing
+(100) monocrystalline silicon piece (380 ± 10 μ m, 0.009～0.12 Ω cm) cuts into the rectangle substrate that is of a size of 2.4cm * 0.9cm, adopts the double flute electrochemical erosion method at its surface preparation porous silicon layer.Used corrosive liquid be volume ratio 1: 1 the mixed liquor of hydrofluorite (40%) and absolute ethyl alcohol, the corrosion electric current density that applies is 20mA/cm
2, etching time is 5min.Wherein porous silicon layer area size is 1.6cm * 0.4cm, in order to being coated with WO
3Nano thin-film;
(2) place the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment at the bottom of the porous silicon-base that step (1) is made,
Adopt quality purity be 99.995% tungsten as target, concrete process conditions are: base vacuum degree 2.0 * 10
-4Pa, operating air pressure 1.0Pa, working gas (argon gas, purity 99.9%) is 1: 9 with the ratio of reacting gas (oxygen, purity 99.9%) flow, sputtering power 90W, sputtering time 10min, substrate temperature is a room temperature, prepares WO
3Nano thin-film.
(3) WO that step (2) is made
3Nano thin-film places in the annealing furnace, and anneal environment is an atmospheric environment, and the capping of annealing furnace can be enclosed in print in the metastable annealing atmosphere preferably, but owing to be not complete airtight container, also inevitably is subjected to the influence of external environment.The minitype digital temperature controller is adopted in temperature control.Annealing temperature is set at 600 ℃, and the annealing heat treatment time is 4h.
(4) WO at the bottom of the porous silicon-base that step (3) is made
3Nano thin-film places the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% metal platinum as target, with quality purity be 99.999% argon gas as working gas, the base vacuum degree is 7.0 * 10
-4Pa, sputter operating air pressure are 2Pa, and sputtering time is 8min, and the Ar gas flow is 24ml/min, at WO
3The nanometer particle film surface deposition forms two square Pt electrodes.
WO at the bottom of the porous silicon-base that embodiment 5 makes
3Nano thin-film is at room temperature to 50ppmNH
3Sensitivity be 4.0.
The related process parameter of the embodiment of the invention sees following table for details.
The present invention adopts static distribution method at room temperature to measure WO at the bottom of the porous silicon-base
3Nanometer thin film gas sensitive transducer is to NH
3Deng the sensitivity characteristic of gas, the sensitivity S of definition gas sensor is S=(R
Gas-R
Air)/R
Air, R wherein
a, R
gBe respectively element in air and detected gas in resistance value.
According to WO at the bottom of the porous silicon-base of technical solution of the present invention preparation
3Nanometer thin film gas sensitive transducer compared with prior art, its sensitivity improves nearly 10 times.
WO at the bottom of the preparation porous silicon-base of the present invention
3The method of nanometer thin film gas sensitive transducer is except being applicable to WO
3Outside the nano thin-film, also applicable to SnO
2Nano thin-film, ZnO nano thin-film etc.; WO at the bottom of the porous silicon-base of the present invention
3Nanometer thin film gas sensitive transducer is the ideal material that is used for making low working temperature gas sensor at present.
Claims (4)
1. one kind prepares WO at the bottom of the porous silicon-base
3The method of nanometer thin film gas sensitive transducer has following steps:
(1) preparation porous silicon layer substrate:
Adopt the p of double flute electrochemical erosion method at single-sided polishing
+Monocrystalline silicon sheet surface prepares porous silicon layer, used corrosive liquid be volume ratio 1: 1 the mixed liquor of hydrofluorite (40%) and absolute ethyl alcohol, apply the size of corrosion electric current density and porosity, the thickness that etching time changes porous silicon layer by control, the corrosion electric current density that applies is 20～80mA/cm
2, etching time is 5～30min;
(2) preparation WO
3Nano thin-film:
The porous silicon layer substrate that step (1) is made places the vacuum chamber of ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% tungsten as target, concrete process conditions are: base vacuum degree (2～4) * 10
-4Pa, operating air pressure 1.0～2.0Pa, working gas (argon gas, purity 99.9%) is 9: 1～1: 9 with the ratio of reacting gas (oxygen, purity 99.9%) flow, sputtering power 60～100W, sputtering time 2～30min, substrate temperature are the chamber;
(3) annealing in process
WO at the bottom of the porous silicon-base that step (2) is made
3Nano thin-film places in the high-temperature heater, and the annealing in process environment is an atmospheric environment, and the annealing in process temperature is 400～600 ℃, and the annealing in process time is 2～4h, then with the stove natural cooling;
(4) plated electrode
The WO that step (3) is made
3Nano thin-film places the vacuum chamber of ultrahigh vacuum facing-target magnetron sputtering system equipment, adopt quality purity be 99.995% metal platinum as target, with quality purity be 99.999% argon gas as working gas, base vacuum degree (2.0～7.0) * 10
-4Pa, sputter operating air pressure 2Pa, sputtering time 8min, Ar gas flow 24ml/min is at WO
3The nano thin-film surface deposition forms two square Pt electrodes, makes WO at the bottom of the porous silicon-base
3Nanometer thin film gas sensitive transducer.
2. according to WO at the bottom of the preparation porous silicon-base of claim 1
3The method of nanometer thin film gas sensitive transducer is characterized in that, the porous silicon layer aperture size of described step (1) is about 10～20nm, and the degree of depth is 20～80 μ m, and porosity is 50～76.80%.
3. according to WO at the bottom of the preparation porous silicon-base of claim 1
3The method of nanometer thin film gas sensitive transducer is characterized in that, the vacuum chamber of the ultrahigh vacuum facing-target magnetron sputtering system equipment of described step (2), step (4) is the vacuum chamber of DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment.
4. according to WO at the bottom of the preparation porous silicon-base of claim 1
3The method of nanometer thin film gas sensitive transducer is characterized in that, the minitype digital temperature controller is adopted in the annealing temperature control of described step (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010125134A CN101799443A (en) | 2010-03-16 | 2010-03-16 | Method for preparing multiaperture silicon substrate tungsten oxide nanometer thin film gas sensitive transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010125134A CN101799443A (en) | 2010-03-16 | 2010-03-16 | Method for preparing multiaperture silicon substrate tungsten oxide nanometer thin film gas sensitive transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101799443A true CN101799443A (en) | 2010-08-11 |
Family
ID=42595207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010125134A Pending CN101799443A (en) | 2010-03-16 | 2010-03-16 | Method for preparing multiaperture silicon substrate tungsten oxide nanometer thin film gas sensitive transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101799443A (en) |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935010A (en) * | 2010-09-07 | 2011-01-05 | 上海交通大学 | Preparation method of carbon nano tube nasaltube type gas-sensitive sensor based on polyimide flexible substrate |
| CN101973510A (en) * | 2010-10-24 | 2011-02-16 | 天津大学 | Method for preparing gas-sensitive sensor element based on carbon nano tube microarray/tungsten oxide nano composite structure |
| CN102012386A (en) * | 2010-10-24 | 2011-04-13 | 天津大学 | Preparation method of nitric oxide gas sensor element based on pseudodirected tungsten trioxide nano tape |
| CN102248737A (en) * | 2011-04-14 | 2011-11-23 | 天津大学 | Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor |
| CN102383177A (en) * | 2010-08-30 | 2012-03-21 | 新疆大学 | Method for preparing porous silicon on silicon-on insulator (SOI) |
| CN102418116A (en) * | 2010-09-27 | 2012-04-18 | 新奥科技发展有限公司 | Preparation method of nano-bulk base porous tungsten trioxide thin film electrode and tungsten trioxide thin film electrode |
| CN102998344A (en) * | 2012-12-11 | 2013-03-27 | 清华大学 | Novel nanosheet film for sensor and preparation method thereof |
| CN103046021A (en) * | 2012-12-26 | 2013-04-17 | 天津大学 | Preparation method of porous silicon-based tungsten oxide nanowire composite gas-sensitive material |
| CN103063707A (en) * | 2012-12-26 | 2013-04-24 | 天津大学 | Preparation method for gas-sensitive material with composite structure |
| CN103063706A (en) * | 2012-12-26 | 2013-04-24 | 天津大学 | Preparation method for porous silicon based tungsten oxide nanocomposite structure gas sensor |
| CN103245699A (en) * | 2013-05-11 | 2013-08-14 | 天津大学 | Preparation method of gas sensitive element capable of detecting nitric oxides at room temperature |
| CN103245696A (en) * | 2013-05-11 | 2013-08-14 | 天津大学 | Method for preparing porous silicon-based one-dimensional nanowire gas sensitive element |
| CN103364390A (en) * | 2012-04-10 | 2013-10-23 | 国家纳米科学中心 | Surface-enhanced Raman substrate, preparation method and application thereof |
| CN103389334A (en) * | 2013-07-24 | 2013-11-13 | 天津大学 | Preparation method of copper-doped porous silicon-based tungsten oxide room-temperature gas sensitive element |
| CN103512924A (en) * | 2013-10-21 | 2014-01-15 | 天津大学 | Preparation method of gas sensitive element for detecting nitric oxide at low temperature |
| CN103630572A (en) * | 2013-10-21 | 2014-03-12 | 天津大学 | Preparation method of porous silicon/tungsten oxide nanowire composite structure for gas-sensitive material |
| CN103626117A (en) * | 2013-10-21 | 2014-03-12 | 天津大学 | Method for preparing tungsten oxide nanowire/porous silicon composite structure material at low temperature |
| CN105334291A (en) * | 2014-08-05 | 2016-02-17 | 罗伯特·博世有限公司 | Micromechanical gas sensor device and manufacturing method thereof |
| CN105486820A (en) * | 2016-01-13 | 2016-04-13 | 时建华 | Outdoor video surveillance equipment with gas detection function |
| CN105675650A (en) * | 2016-01-21 | 2016-06-15 | 天津大学 | Manufacturing method of porous silicon based copper oxide composite structural gas sensors applied at room temperature |
| CN105866187A (en) * | 2016-03-25 | 2016-08-17 | 中国科学院高能物理研究所 | Semiconductor gas-sensitive sensor and making method thereof |
| CN106053540A (en) * | 2016-06-29 | 2016-10-26 | 天津大学 | Preparation method of one-dimensional silicon nanowire array gas-sensitive sensor |
| CN107907572A (en) * | 2017-10-27 | 2018-04-13 | 天津大学 | A kind of respond style control method of tungsten oxide nano gas sensor |
| CN108982599A (en) * | 2017-06-05 | 2018-12-11 | 天津师范大学 | Porous silicon-base tungsten oxide film composite material gas sensor and its preparation method and application |
| CN109813776A (en) * | 2017-11-20 | 2019-05-28 | 天津师范大学 | Intermediate pore size porous silicon-base zinc oxide films film composite material gas sensor and its preparation method and application |
| CN110088607A (en) * | 2016-11-21 | 2019-08-02 | 荷兰联合利华有限公司 | Gas sensor for detection gas component |
| CN112394090A (en) * | 2019-08-15 | 2021-02-23 | 有研工程技术研究院有限公司 | Nitrogen dioxide gas sensor element and preparation method thereof |
| CN112725748A (en) * | 2020-11-10 | 2021-04-30 | 北京工业大学 | Preparation method of superfine nanocrystalline tungsten material |
| TWI740730B (en) * | 2020-11-23 | 2021-09-21 | 國立成功大學 | Tungsten trioxide/silicon nanocomposite structure, manufacturing method thereof and gas sensing device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0365502A (en) * | 1989-07-31 | 1991-03-20 | Sumitomo Electric Ind Ltd | Preparation of superconductive thin film |
| JP2000298108A (en) * | 1999-04-13 | 2000-10-24 | Osaka Gas Co Ltd | Gas sensor |
| CN1975397A (en) * | 2006-12-21 | 2007-06-06 | 天津大学 | Tungstic acid thin film air-sensitive sensor surface modifying method |
| CN100412227C (en) * | 2006-07-25 | 2008-08-20 | 天津大学 | Magnetically controlled opposite target sputtering process of preparing gas-sensitive WO3 film sensor |
| CN100546049C (en) * | 2006-07-25 | 2009-09-30 | 天津大学 | The porous silicon-base vanadium oxide thin film of heat-insulating property and preparation method |
-
2010
- 2010-03-16 CN CN201010125134A patent/CN101799443A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0365502A (en) * | 1989-07-31 | 1991-03-20 | Sumitomo Electric Ind Ltd | Preparation of superconductive thin film |
| JP2000298108A (en) * | 1999-04-13 | 2000-10-24 | Osaka Gas Co Ltd | Gas sensor |
| CN100412227C (en) * | 2006-07-25 | 2008-08-20 | 天津大学 | Magnetically controlled opposite target sputtering process of preparing gas-sensitive WO3 film sensor |
| CN100546049C (en) * | 2006-07-25 | 2009-09-30 | 天津大学 | The porous silicon-base vanadium oxide thin film of heat-insulating property and preparation method |
| CN1975397A (en) * | 2006-12-21 | 2007-06-06 | 天津大学 | Tungstic acid thin film air-sensitive sensor surface modifying method |
Non-Patent Citations (4)
| Title |
|---|
| 《中国优秀硕士学位论文全文数据库 信息科技辑》 20090815 陈鹏 低功耗多孔硅气敏传感器性能研究 22-26、56 1-4 , 第8期 * |
| 《传感技术学报》 20070430 尹英哲 等 直流反应磁控溅射WO3薄膜气敏特性研究 760-762 1-4 第20卷, 第4期 * |
| 《材料工程》 20091231 李东海等 多孔硅气体传感器的制备及其气敏性能的研究 71-74 1-4 , 第4期 * |
| 孙凤云 等: "介孔硅基WO_3纳米颗粒薄膜室温气敏元件特性", 《纳米技术与精密工程》, vol. 8, no. 2, 15 March 2010 (2010-03-15), pages 156 - 160 * |
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383177A (en) * | 2010-08-30 | 2012-03-21 | 新疆大学 | Method for preparing porous silicon on silicon-on insulator (SOI) |
| CN101935010A (en) * | 2010-09-07 | 2011-01-05 | 上海交通大学 | Preparation method of carbon nano tube nasaltube type gas-sensitive sensor based on polyimide flexible substrate |
| CN102418116B (en) * | 2010-09-27 | 2016-08-31 | 新奥科技发展有限公司 | The preparation method of nano-bulk base porous tungsten trioxide thin electrode and tungsten trioxide thin film electrode |
| CN102418116A (en) * | 2010-09-27 | 2012-04-18 | 新奥科技发展有限公司 | Preparation method of nano-bulk base porous tungsten trioxide thin film electrode and tungsten trioxide thin film electrode |
| CN101973510A (en) * | 2010-10-24 | 2011-02-16 | 天津大学 | Method for preparing gas-sensitive sensor element based on carbon nano tube microarray/tungsten oxide nano composite structure |
| CN102012386A (en) * | 2010-10-24 | 2011-04-13 | 天津大学 | Preparation method of nitric oxide gas sensor element based on pseudodirected tungsten trioxide nano tape |
| CN101973510B (en) * | 2010-10-24 | 2012-03-07 | 天津大学 | Method for preparing gas-sensitive sensor element based on carbon nano tube microarray/tungsten oxide nano composite structure |
| CN102248737B (en) * | 2011-04-14 | 2013-08-14 | 天津大学 | Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor |
| CN102248737A (en) * | 2011-04-14 | 2011-11-23 | 天津大学 | Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor |
| CN103364390A (en) * | 2012-04-10 | 2013-10-23 | 国家纳米科学中心 | Surface-enhanced Raman substrate, preparation method and application thereof |
| CN102998344A (en) * | 2012-12-11 | 2013-03-27 | 清华大学 | Novel nanosheet film for sensor and preparation method thereof |
| CN102998344B (en) * | 2012-12-11 | 2014-11-26 | 清华大学 | Novel nanosheet film for sensor and preparation method thereof |
| CN103046021A (en) * | 2012-12-26 | 2013-04-17 | 天津大学 | Preparation method of porous silicon-based tungsten oxide nanowire composite gas-sensitive material |
| CN103063707A (en) * | 2012-12-26 | 2013-04-24 | 天津大学 | Preparation method for gas-sensitive material with composite structure |
| CN103063706A (en) * | 2012-12-26 | 2013-04-24 | 天津大学 | Preparation method for porous silicon based tungsten oxide nanocomposite structure gas sensor |
| CN103245699A (en) * | 2013-05-11 | 2013-08-14 | 天津大学 | Preparation method of gas sensitive element capable of detecting nitric oxides at room temperature |
| CN103245696A (en) * | 2013-05-11 | 2013-08-14 | 天津大学 | Method for preparing porous silicon-based one-dimensional nanowire gas sensitive element |
| CN103389334A (en) * | 2013-07-24 | 2013-11-13 | 天津大学 | Preparation method of copper-doped porous silicon-based tungsten oxide room-temperature gas sensitive element |
| CN103626117A (en) * | 2013-10-21 | 2014-03-12 | 天津大学 | Method for preparing tungsten oxide nanowire/porous silicon composite structure material at low temperature |
| CN103512924A (en) * | 2013-10-21 | 2014-01-15 | 天津大学 | Preparation method of gas sensitive element for detecting nitric oxide at low temperature |
| CN103630572A (en) * | 2013-10-21 | 2014-03-12 | 天津大学 | Preparation method of porous silicon/tungsten oxide nanowire composite structure for gas-sensitive material |
| CN105334291A (en) * | 2014-08-05 | 2016-02-17 | 罗伯特·博世有限公司 | Micromechanical gas sensor device and manufacturing method thereof |
| CN105486820A (en) * | 2016-01-13 | 2016-04-13 | 时建华 | Outdoor video surveillance equipment with gas detection function |
| CN105675650A (en) * | 2016-01-21 | 2016-06-15 | 天津大学 | Manufacturing method of porous silicon based copper oxide composite structural gas sensors applied at room temperature |
| CN105866187A (en) * | 2016-03-25 | 2016-08-17 | 中国科学院高能物理研究所 | Semiconductor gas-sensitive sensor and making method thereof |
| CN106053540A (en) * | 2016-06-29 | 2016-10-26 | 天津大学 | Preparation method of one-dimensional silicon nanowire array gas-sensitive sensor |
| CN110088607A (en) * | 2016-11-21 | 2019-08-02 | 荷兰联合利华有限公司 | Gas sensor for detection gas component |
| CN110088607B (en) * | 2016-11-21 | 2022-12-27 | 联合利华知识产权控股有限公司 | Gas sensor for detecting gas components |
| CN108982599A (en) * | 2017-06-05 | 2018-12-11 | 天津师范大学 | Porous silicon-base tungsten oxide film composite material gas sensor and its preparation method and application |
| CN107907572A (en) * | 2017-10-27 | 2018-04-13 | 天津大学 | A kind of respond style control method of tungsten oxide nano gas sensor |
| CN109813776A (en) * | 2017-11-20 | 2019-05-28 | 天津师范大学 | Intermediate pore size porous silicon-base zinc oxide films film composite material gas sensor and its preparation method and application |
| CN112394090A (en) * | 2019-08-15 | 2021-02-23 | 有研工程技术研究院有限公司 | Nitrogen dioxide gas sensor element and preparation method thereof |
| CN112725748A (en) * | 2020-11-10 | 2021-04-30 | 北京工业大学 | Preparation method of superfine nanocrystalline tungsten material |
| CN112725748B (en) * | 2020-11-10 | 2022-09-09 | 北京工业大学 | Preparation method of superfine nanocrystalline tungsten material |
| TWI740730B (en) * | 2020-11-23 | 2021-09-21 | 國立成功大學 | Tungsten trioxide/silicon nanocomposite structure, manufacturing method thereof and gas sensing device |
| US11598741B2 (en) | 2020-11-23 | 2023-03-07 | National Cheng Kung University | Tungsten trioxide/silicon nanocomposite structure, method for manufacturing the same and gas sensing device having the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101799443A (en) | Method for preparing multiaperture silicon substrate tungsten oxide nanometer thin film gas sensitive transducer | |
| Shinde et al. | LPG sensing properties of ZnO films prepared by spray pyrolysis method: effect of molarity of precursor solution | |
| CN103852496B (en) | Based on certainly to the preparation method of the gas sensor element of tungsten oxide nano | |
| CN104445047B (en) | A kind of tungsten oxide/vanadium oxide heterojunction nano-wire array and preparation method thereof | |
| CN102180518B (en) | Large-scale preparation method of niobium pentoxide nanowires and hydrogen-sensitive element thereof | |
| Rezugina et al. | Ni-YSZ films deposited by reactive magnetron sputtering for SOFC applications | |
| CN101973510B (en) | Method for preparing gas-sensitive sensor element based on carbon nano tube microarray/tungsten oxide nano composite structure | |
| CN104711528A (en) | Sheet-like tungsten trioxide photoelectrode and preparation method thereof | |
| CN101824603B (en) | Method for manufacturing composite film gas sensor | |
| Lee et al. | Fabrication and gas sensing properties of α-Fe2O3 thin film prepared by plasma enhanced chemical vapor deposition (PECVD) | |
| CN103630572A (en) | Preparation method of porous silicon/tungsten oxide nanowire composite structure for gas-sensitive material | |
| CN103063707A (en) | Preparation method for gas-sensitive material with composite structure | |
| CN203350214U (en) | High-performance nitric oxide gas sensitive element working at room temperature | |
| CN103046021A (en) | Preparation method of porous silicon-based tungsten oxide nanowire composite gas-sensitive material | |
| CN101158049A (en) | Method for preparing P-type transparent conductive oxide CuAlO2 film | |
| CN104934490B (en) | A kind of method that large area in situ synthesizes stannous oxide semiconductor optoelectronic thin-film material | |
| CN106145030A (en) | A kind of hud typed tungsten oxide cupric oxide heterojunction nano-wire array of vertical orientation and preparation method thereof | |
| JP2009235541A (en) | Method for producing zinc oxide based sintered target | |
| CN104762605A (en) | Method for quickly growing abundant M-phase vanadium dioxide nanowires by using pulse laser deposition technique | |
| CN103710675A (en) | ZnO-based film and preparation method thereof | |
| Mishra et al. | Bead structured nanocrystalline ZnO thin films: synthesis and LPG sensing properties | |
| CN108535334A (en) | A kind of methanol gas sensor preparation method of tin oxide nanoparticles and zinc oxide nanowire aggregate structure | |
| CN102260073A (en) | Zinc-oxide-based low-voltage voltage-sensitive ceramic thin film material and preparation method thereof | |
| CN108931559B (en) | Boron-doped graphene-modified Au @ ZnO core-shell heterojunction type triethylamine gas sensor and preparation method thereof | |
| CN101424653A (en) | Zinc oxide doped air-sensitive film preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100811 |