CN101789436A - Image sensor and manufacturing method thereof - Google Patents
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- CN101789436A CN101789436A CN200910045927A CN200910045927A CN101789436A CN 101789436 A CN101789436 A CN 101789436A CN 200910045927 A CN200910045927 A CN 200910045927A CN 200910045927 A CN200910045927 A CN 200910045927A CN 101789436 A CN101789436 A CN 101789436A
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Abstract
The invention provides an image sensor and a manufacturing method thereof. The image sensor comprises a substrate, a main pixel region and passivation layers, wherein the substrate is provided with a pad region, an other circuit region and an active pixel region; the main pixel region is formed in the active pixel region; and the passivation layers only exist in the other circuit region and the main pixel region. The manufacturing method comprises the following steps: forming the pad region, the other circuit region and the active pixel region on the substrate; forming the main pixel region in the active pixel region; and forming the passivation layers which only exist in the other circuit region and the main pixel region. The invention not only can give consideration to the passivation layers, but also can reduce direct exposure of the main pixel array region in the process of manufacturing the color filter and the micro lens.
Description
Technical field
The present invention relates to semiconductor applications, particularly sensor field.
Background technology
Imageing sensor is from the physics receiving optical signals and light signal is converted into the device of the signal of telecommunication.The signal of telecommunication can be transmitted then and be used for further processing, such as digitlization, and then stores in the memory device such as memory, CD or disk, or is used for demonstration, printing etc. on display.Imageing sensor is widely used in digital camera, video camera, printer, facsimile machine etc. now.
According to the element difference, imageing sensor is divided into CCD (CCD, ChargeCoupled Device, charge coupled cell) transducer and metal oxide semiconductor device (CMOS, Complementary Metal-Oxide Semiconductor) transducer, the basic means that both all adopt photo-sensitive cell to catch as image, the core of both photo-sensitive cells also all is a light sensitive diode (photodiode), this diode can produce output current after accepting irradiate light, current's intensity is then corresponding with the intensity of illumination, therefore, the sensitivity of imageing sensor and light-sensitive device (as the photodiode) incident light that can capture is closely bound up.Ccd sensor is the high-end technology element that is applied in the photography and vedio recording aspect, and its advantage is the low noise running and the device uniformity; Cmos sensor then is applied in the product of low image quality, and its advantage is that manufacturing cost is lower than CCD, and power consumption is also much lower, and it is because high frame ability can be at high-speed cruising.Further, described cmos sensor is divided into black and white cmos image sensor and color cmos image sensors.Wherein, the black and white cmos sensor does not have color rendition degree index, have only gray scale not have color, and color cmos image sensors causes about 60% light ray energy loss owing to having infrared filter, in addition since its each all have three-color filter R/G/B (red/green/blue) also can cause about 20% light ray energy loss above the pixel, go approximately to have only about 32% so incident light arrives the pixel that its light-sensitive element forms.Thus, it should be appreciated by those skilled in the art that the black and white cmos sensor can make near 100% energy arrival pixel, so the black and white cmos sensor has higher photosensitivity than color cmos image sensors.
In cmos sensor technology of today, top layer passivation layer structure and standard CMOS manufacturing process are similar substantially.Described top layer passivation layer is to be used to separate internal circuit and external environment condition, to prevent the adverse effect of bringing such as moisture, corrosive compound etc. from external environment condition.The silicon nitride that thickness is thicker (SiN) layer is generally used for making the passivation layer of cmos sensor.Yet, since compare with common insulating barrier/dielectric layer (such as silicon dioxide layer (SiO
2)), silicon nitride has higher photon (Photon) absorptivity and refractive index, therefore, and in cmos sensor, incident light sees through that silicon nitride layer as passivation layer brings can arrive light-sensitive device and will be reduced to some extent, and this will cause the sensitivity of cmos sensor to descend and degenerate.In order to address the aforementioned drawbacks, the passivation layer to the CMOS inductor improves in the industry.For example, publication number is that the U.S. Patent application of US2006011813 overcomes above-mentioned defective with regard to the silicon nitride passivation that has disclosed by removing fully at main pixel region top layer in cmos sensor.
Particularly, Fig. 1 shows the part cross sectional representation of the color cmos image sensors of prior art.As shown in Figure 1, color cmos image sensors comprises the active pixel district A1 with main pel array A11, and described active pixel district can also comprise dummy pixel array and optical black area.Described color cmos image sensors also comprises control circuit district B1, it can comprise line driver, row driver and other circuit, it can also comprise such as correlated double sampling device (CDS), analog-digital converter (ADC), digital signal processor (DPS) other circuit relevant with the operation of color cmos image sensors IS with other.Described color cmos image sensors also comprises pad area C1, the electrical connection such as lead-in wire and conducting wire can be welded to described color cmos image sensors at pad area C1.Described color cmos image sensors is formed on the Semiconductor substrate 11.Described color cmos image sensors comprises photosensitive area 21, described photosensitive area 21 comprises a plurality of light-sensitive devices, for example n type photodiode and p type HAD district, it can also comprise isolated area, main pixel active area, benchmark pixel (optics is black) active area and dummy pixel active area.Interlayer dielectric layer 31 is formed at substrate 11 and 21 tops, photosensitive area, and described interlayer dielectric layer 31 comprises first interlayer dielectric layer 311, second interlayer dielectric layer 312 above described first interlayer dielectric layer 311 and the 3rd interlayer dielectric layer 313 above second interlayer dielectric layer 312.First interconnection line is formed at described first interlayer dielectric layer 311 tops, and second interconnection line is formed at described second interlayer dielectric layer 312 tops.Described first interconnection line includes 411a of first and the second portion 411b in control circuit district B among the source pixel array area A, and described second interconnection line includes second portion 412a and the second portion 412b in control circuit district B among the source pixel array area A1.The passivation layer of being made by for example silicon nitride 71 is formed at interlayer dielectric layer 31 tops, need to prove, can also have articulamentum (for example aluminum conductor of being made by aluminum conductor) between described passivation layer 71 and the described interlayer dielectric layer 31, described articulamentum can also comprise photoresist layer and pad portion further.Wherein, described passivation layer 71 is not present among the main pixel array region A11 of active pixel array district A1, and it can partly be present in (not shown) in the other parts of active pixel array district A1.Described passivation layer 71 can also partly be present among the pad area C1, and it is not present in (not shown) in the actual welding district of pad area C1.Chromatic filter district 51 in active pixel array district A1 other parts and control circuit district B1 in be formed at above the passivation layer 71, be formed at above the 3rd interlayer dielectric layer 313 among the main pixel array region A11 in active pixel array district A1, wherein, can also comprise the insulating barrier (not shown) between described the 3rd interlayer dielectric layer 313 among the described main pixel array region A11 and the described chromatic filter district 51.Particularly, described chromatic filter district 51 can comprise Infrared filter, red filter, green filter, light filter of blue light etc.Smoothing layer 81 is formed at 51 tops, chromatic filter district.Lenticule 61 is present in above the described smoothing layer 81 in active pixel array district A1.
By avoiding in the active pixel array district, forming passivation layer; though the photon that above-mentioned color cmos image sensors can avoid its main pixel array region owing to passivation layer absorption of incident light and refraction to be reduced; thereby improve its sensitivity; but; it will be appreciated by those skilled in the art that; because described main pixel array region does not have the protection of passivation layer; it will be subjected to the infringement (for example, in chromatic filter and lenticular making) such as harmful substances such as fog and corrosive compounds inevitably.
In sum, need a kind of passivation layer function of both having taken into account in the industry, can reduce the imageing sensor that main pixel array region directly exposes again in for example chromatic filter and lenticular making, the present invention just is being based on this proposition.
Summary of the invention
In order to address the aforementioned drawbacks, the invention provides a kind of imageing sensor and manufacture method thereof, can prevent effectively that imageing sensor is subjected to the infringement of harmful substance and improves its sensitivity.
A first aspect of the present invention provides a kind of imageing sensor, wherein, comprising:
Substrate is formed with pad area, other circuit regions and active pixel district on it;
Main pixel region is formed in the described active pixel district;
Passivation layer, it exists only in described other circuit regions and the described main pixel region.
A second aspect of the present invention provides a kind of manufacture method of imageing sensor, wherein, comprises the steps:
A. on substrate, form pad area, other circuit regions and active pixel district;
B. in described active pixel district, form main pixel region;
C. form passivation layer, described passivation layer exists only in described other circuit regions and the described main pixel region.
Adopt imageing sensor provided by the invention and manufacture method thereof, can protect imageing sensor not to be subjected to the infringement of harmful substance effectively, and can improve its sensitivity effectively.
Description of drawings
By reading the following detailed description of doing with reference to accompanying drawing to non-limiting example, other features, objects and advantages of the present invention will become more obvious.
Fig. 1 is the part cross sectional representation of the color cmos image sensors of prior art;
Fig. 2 a is the part cross sectional representation according to the imageing sensor of a specific embodiment of the present invention;
Fig. 2 b is the part cross sectional representation according to the imageing sensor of an alternate embodiment of the specific embodiment shown in Fig. 2 a;
Fig. 2 c is the part cross sectional representation according to the imageing sensor of the another alternate embodiment of the specific embodiment shown in Fig. 2 a;
Fig. 3 is the flow chart of steps according to the shop drawings image-position sensor of a specific embodiment of the present invention;
Fig. 4 a～Fig. 4 c is the process chart according to the step S3 of the shop drawings image-position sensor of a specific embodiment of the present invention;
Fig. 5 a～Fig. 5 d is the process chart according to the step S3 of the shop drawings image-position sensor of an alternate embodiment of the specific embodiment shown in Fig. 4 a～Fig. 4 c;
Fig. 6 a, Fig. 6 b are the process charts according to the step S3 of the shop drawings image-position sensor of the another alternate embodiment of the specific embodiment shown in Fig. 4 a～Fig. 4 c.
In the accompanying drawing, identical or the similar identical or similar parts of accompanying drawing sign representative.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
Fig. 2 a shows the part cross sectional representation according to the imageing sensor of a specific embodiment of the present invention.As shown in Figure 2, a first aspect of the present invention provides a kind of imageing sensor, wherein, comprising:
Main pixel region A21 is formed at described active pixel district A2;
Passivation layer, described passivation layer exist only among described other circuit regions B2 and the described main pixel region A21.
Particularly, described active pixel district A2 can also comprise dummy pixel array and optical black area.Described other circuit regions B2 can comprise line driver, row driver and other circuit, it can also comprise such as correlated double sampling device (CDS), analog-digital converter (ADC), digital signal processor (DPS) other circuit relevant with the operation of imageing sensor IS with other.Described pad area C2 can be welded to described imageing sensor with the electrical connection such as lead-in wire and conducting wire.
Further, the active pixel district A2 of the imageing sensor that first aspect present invention provides also comprises photosensitive area 22, wherein, described photosensitive area 22 can comprise a plurality of light-sensitive devices, for example n/p type photodiode and n/p type HAD (Hole-Accumulation Diode) district.Described active pixel district A2 can also comprise isolated area, main pixel active area, benchmark pixel (optics is black) active area and dummy pixel active area etc.Interlayer dielectric layer 32 is formed at substrate 12 and 22 tops, photosensitive area, and described interlayer dielectric layer 32 comprises first interlayer dielectric layer 321, at second interlayer dielectric layer 322 above described first interlayer dielectric layer 321 and the 3rd interlayer dielectric layer 323 above described second interlayer dielectric layer 322.First interconnection line is formed at described first interlayer dielectric layer 321 tops, and second interconnection line is formed at described second interlayer dielectric layer 322 tops.Wherein, described first interconnection line can include 421a of first and the second portion 421b in control circuit district B2 among the source pixel district A2, and described second interconnection line includes second portion 422a and the second portion 422b in control circuit district B2 among the source pixel district A2.Wherein, passivation layer is formed at interlayer dielectric layer 32 tops.Need to prove, can also have the articulamentum (not shown) between described passivation layer and the described interlayer dielectric layer 32, described articulamentum can be by making such as aluminum conductor, and described articulamentum can also comprise photoresist layer and pad portion further.
Further, described passivation layer can comprise first passivation layer 721 and second passivation layer 722, wherein, described first passivation layer 721 is formed among described other circuit regions B2, and described second passivation layer 722 is formed among described other circuit regions B2 and the described main pixel region A21.
Further, described second passivation layer 722 covers described first passivation layer 721.
Particularly, wherein, described first passivation layer 721 exists only in other circuit regions B2 of imageing sensor, also may reside in other parts (nonessential) of the active pixel district A2 of imageing sensor, and can't be present in main pixel region A21 and the pad area C2 of the active pixel district A2 of imageing sensor.Described second passivation layer 722 is present in other circuit regions B2 of imageing sensor and the main pixel region A21 of active pixel district A2, also may reside in other parts (nonessential) of the active pixel district A2 of imageing sensor, and can't have the pad area C2 of imageing sensor.
In addition, described imageing sensor also comprises chromatic filter district 52, smoothing layer 82 and lenticule 62.Wherein, described chromatic filter district 52 is formed at the top of passivation layer, and particularly, described chromatic filter district 52 can comprise Infrared filter, red filter, green filter, light filter of blue light etc.Smoothing layer 82 is formed at 52 tops, chromatic filter district.Lenticule 62 is present in above the described smoothing layer 82 in active pixel district A2.V especially, the span of the thickness of described first passivation layer 721 is
The span of the thickness of described second passivation layer 722 is
Especially, described first passivation layer 721 comprises silicon nitride, and described second passivation layer 722 comprises silicon nitride or silicon oxynitride.
One according to the specific embodiment shown in Fig. 2 a changes example, can also clipped second passivation layer 722.Particularly, shown in 2b, described first passivation layer 721 exists only among other circuit regions B2 of imageing sensor, and can't be present in main pixel region A21 and the pad area C2 of the active pixel district A2 of imageing sensor, be not present in other parts (nonessential) of the active pixel district A2 of imageing sensor yet.Described second passivation layer 722 is present in the main pixel region A21 of the active pixel district A2 of imageing sensor, and can't exist among other circuit regions B2 and pad area C2 of imageing sensor, be not present in other parts (nonessential) of the active pixel district A2 of imageing sensor yet.
Need to prove that in above-mentioned variation example, the position in other physical layer/zones and definition and the above-mentioned physical layer/zone in the cmos sensor shown in Fig. 2 a are consistent, and therefore, do not repeat them here.Wherein, described other physical layer/zones include but not limited to the 422a of first and second portion 422b, chromatic filter district 52, smoothing layer 82 and the lenticule 62 of the 421a of first of active pixel district A2, main pixel region A21, other circuit regions B2, pad area C2, substrate 12, photosensitive area 22, interlayer dielectric layer 32, first interlayer dielectric layer 321, second interlayer dielectric layer 322, the 3rd interlayer dielectric layer 323, first interconnection line and second portion 421b, second interconnection line.
According to the another variation example of the specific embodiment shown in Fig. 2 a, can also omit first passivation layer 721.Particularly, shown in Fig. 2 c, the main pixel region A21 of active pixel district A2 and other circuit that second passivation layer 722 is present in imageing sensor remove B2, also may reside in other parts of active pixel district A2 of imageing sensor (nonessential).
Need to prove that in above-mentioned variation example, the position in other physical layer/zones and definition and the above-mentioned physical layer/zone in the cmos sensor shown in Fig. 2 a are consistent, and therefore, do not repeat them here.Wherein, described other physical layer/zones include but not limited to the 422a of first and second portion 422b, chromatic filter district 52, smoothing layer 82 and the lenticule 62 of the 421a of first of active pixel district A2, main pixel region A21, other circuit regions B2, pad area C2, substrate 12, photosensitive area 22, interlayer dielectric layer 32, first interlayer dielectric layer 321, second interlayer dielectric layer 322, the 3rd interlayer dielectric layer 323, first interconnection line and second portion 421b, second interconnection line.
Especially, described imageing sensor is a cmos image sensor.More particularly, described cmos sensor is a color cmos image sensors.
Fig. 3 shows the flow chart of steps according to the shop drawings image-position sensor of a specific embodiment of the present invention.With reference to Fig. 3, second aspect present invention provides a kind of manufacture method of imageing sensor, wherein, comprises the steps:
At first, in step S1, on substrate, form pad area, other circuit regions and active pixel district;
Then, in step S2, in described active pixel district, form main pixel region;
At last, in step S3, form passivation layer, described passivation layer exists only in described other circuit regions and the described main pixel region.
Fig. 4 a～Fig. 4 c shows the process chart according to the step S3 of the shop drawings image-position sensor of a specific embodiment of the present invention, and further, in the present embodiment, described step S3 also comprises the steps:
At first, with reference to Fig. 4 a, in the active pixel district of described imageing sensor A2 (it comprises main pixel region A21), other circuit regions B2, pad area C2, form first passivation layer 721.
Then, with reference to Fig. 4 a, in other parts, other circuit regions B2 and the pad area C2 of active pixel district A2, first photoresist layer 921 is set, wherein, described first photoresist layer 921 is used for as mask layer, and be that mask is removed described first passivation layer 721 among the described main pixel region A21, and remove remaining described first photoresist layer 921 with first photoresist layer 921.
Then, with reference to Fig. 4 b, on described imageing sensor, form second passivation layer 722.
At last, with reference to Fig. 4 b, in the active pixel district of described imageing sensor A2 and other circuit regions B2, second photoresist layer 922 is set, wherein, described second photoresist layer 922 is used to form mask layer, and be that mask is removed first passivation layer and 721 second passivation layers 722 among the described pad area C2 with described second photoresist layer 922, and remove remaining described second photoresist layer 922, form the passivation layer shown in accompanying drawing 4c afterwards, wherein, described first passivation layer 721 exists only in other circuit regions B2 of imageing sensor, also may reside in other parts (nonessential) of the active pixel district A2 of imageing sensor, and can't be present in main pixel region A21 and the pad area C2 of the active pixel district A2 of imageing sensor.Described second passivation layer 722 is present in other circuit regions B2 of imageing sensor and the main pixel region A21 of active pixel district A2, also may reside in other parts (nonessential) of the active pixel district A2 of imageing sensor, and can't have the pad area C2 of imageing sensor.
Need to prove since the manufacturing in other physical layer/zones in the above-mentioned imageing sensor that provides of present embodiment all the standard CMOS manufacturing process with prior art is consistent, do not repeat them here.Wherein, described other physical layer/zones include but not limited to the 422a of first and second portion 422b, chromatic filter district 52, smoothing layer 82 and the lenticule 62 of the 421a of first of active pixel district A2, main pixel region A21, other circuit regions B2, pad area C2, substrate 12, photosensitive area 22, interlayer dielectric layer 32, first interlayer dielectric layer 321, second interlayer dielectric layer 322, the 3rd interlayer dielectric layer 323, first interconnection line and second portion 421b, second interconnection line.
One according to the specific embodiment shown in Fig. 4 a～Fig. 4 c changes example, can also clipped second passivation layer 722.Particularly, Fig. 5 a～Fig. 5 d is the process chart according to the step S3 of the shop drawings image-position sensor of an alternate embodiment of the specific embodiment shown in Fig. 4 a～Fig. 4 c, and further, in this variation example, described step S3 also comprises the steps:
At first, with reference to Fig. 5 a, in the active pixel district of described imageing sensor A2 (it comprises main pixel region A21), other circuit regions B2, pad area C2, form first passivation layer 721.
Then, with reference to Fig. 5 a, in other parts, other circuit regions B2 and the pad area C2 of active pixel district A2, photoresist layer 921 is set, wherein, described first photoresist layer 921 is used for as mask layer, and be that mask is removed described first passivation layer 721 among the described main pixel region A21, and remove remaining described first photoresist layer 921 with first photoresist layer 921.
Then, with reference to Fig. 5 b, on described imageing sensor, form second passivation layer 722.
Then, with reference to Fig. 5 b, in the active pixel district of described imageing sensor A2 and other circuit regions B2, second photoresist layer 922 is set, wherein, described second photoresist layer 922 is used to form mask layer, and be that mask is removed first passivation layer 721 and second passivation layer 722 among the described pad area C2, and remove remaining described second photoresist layer 922 with described second photoresist layer 922.Then, shown in Fig. 5 c, in the main pixel region A21 of described imageing sensor and other pad areas C2, the 3rd photoresist layer 923 is set, wherein, described the 3rd photoresist layer 923 is used to form mask layer, and be that mask is removed second passivation layer 722 among other parts of described active pixel district A2 and other circuit regions B2 with described the 3rd photoresist layer 923, remove remaining described the 3rd photoresist layer 923 then, form the passivation layer shown in accompanying drawing 5d afterwards, wherein, described first passivation layer 721 exists only in other circuit regions B2 of imageing sensor, and can't be present in main pixel region A21 and the pad area C2 of the active pixel district A2 of imageing sensor, be not present in other parts (nonessential) of the active pixel district A2 of imageing sensor yet.Described second passivation layer 722 is present in the main pixel region A21 of the active pixel district A2 of imageing sensor, and can't have the pad area C2 of imageing sensor, also is not present in other parts (nonessential) of the active pixel district A2 of imageing sensor.
Need to prove since the manufacturing in other physical layer/zones in the routine above-mentioned imageing sensor that provides of this variations all the standard CMOS manufacturing process with prior art is consistent, do not repeat them here.Wherein, described other physical layer/zones include but not limited to the 422a of first and second portion 422b, chromatic filter district 52, smoothing layer 82 and the lenticule 62 of the 421a of first of active pixel district A2, main pixel region A21, other circuit regions B2, pad area C2, substrate 12, photosensitive area 22, interlayer dielectric layer 32, first interlayer dielectric layer 321, second interlayer dielectric layer 322, the 3rd interlayer dielectric layer 323, first interconnection line and second portion 421b, second interconnection line.
According to the another variation example of the specific embodiment shown in Fig. 4 a～4c, can also omit first passivation layer 721.Particularly, Fig. 6 a～Fig. 6 b is the process chart according to the step S3 of the shop drawings image-position sensor of the another alternate embodiment of the specific embodiment shown in Fig. 4 a～Fig. 4 c, and further, in this variation example, described step S3 also comprises the steps:
At first, with reference to Fig. 6 a, in the active pixel district of described imageing sensor A2 (it comprises main pixel region A21), other circuit regions B2, pad area C2, form second passivation layer 722.。
Then, with reference to Fig. 6 a, in active pixel district A2 and other circuit regions B2, first photoresist layer 921 is set, wherein, described first photoresist layer 921 is used for as mask layer, and be that mask is removed described second passivation layer 722 in the described pad area with first photoresist layer 921, remove remaining described first photoresist layer 921 then, form the passivation layer shown in accompanying drawing 6b afterwards, the main pixel region A21 of active pixel district A2 and other circuit that second passivation layer 722 is present in imageing sensor remove B2, also may reside in other parts of active pixel district A2 of imageing sensor (nonessential).
Need to prove since the manufacturing in other physical layer/zones in the routine above-mentioned imageing sensor that provides of this variations all the standard CMOS manufacturing process with prior art is consistent, do not repeat them here.Wherein, described other physical layer/zones include but not limited to the 422a of first and second portion 422b, chromatic filter district 52, smoothing layer 82 and the lenticule 62 of the 421a of first of active pixel district A2, main pixel region A21, other circuit regions B2, pad area C2, substrate 12, photosensitive area 22, interlayer dielectric layer 32, first interlayer dielectric layer 321, second interlayer dielectric layer 322, the 3rd interlayer dielectric layer 323, first interconnection line and second portion 421b, second interconnection line.
Especially, the span of the thickness of described first passivation layer is
The span of the thickness of described second passivation layer is
Especially, described first passivation layer comprises silicon nitride, and described second passivation layer comprises silicon nitride or silicon oxynitride.
Especially, what the formation of described first passivation layer 721 and second passivation layer 722 was adopted is chemical vapor deposition, and more particularly, described chemical vapor deposition comprises plasma enhanced chemical vapor deposition.
Especially, described first passivation layer 722 among the described main pixel region A21 of described removal, described first passivation layer 721 among the described pad area C2 of described removal, what remove described second passivation layer 722 among the described pad area C2 and remove that described second passivation layer 722 among other circuit regions B2 adopts is etching.
Especially, described imageing sensor is a cmos image sensor.More particularly, described cmos image sensor is a color cmos image sensors.
Need to prove, because the low particularity of color cmos image sensors photosensitivity, prior art does not appear at the technology of the main pixel region making passivation layer of described color cmos image sensors as yet, color cmos image sensors provided by the invention has been filled up technological gap, make its adverse effect that not only can avoid moisture, corrosive compound etc. to bring, can also make it have higher sensitivity from the outside.
Also need to prove, form silicon oxynitride that the passivation layer of color cmos image sensors provided by the invention adopts compared to traditional silicon nitride, therefore lower photonic absorbance and refractive index are arranged, adopt the sensitivity of the color cmos transducer that silicon oxynitride provides as the preferred embodiments of the present invention of passivation layer higher.
More than specific embodiments of the invention are described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the appended claims.
Claims (24)
1. imageing sensor wherein, comprising:
Substrate is formed with pad area, other circuit regions and active pixel district on it;
Main pixel region is formed in the described active pixel district;
Passivation layer, it exists only in described other circuit regions and the described main pixel region.
2. imageing sensor as claimed in claim 1 is characterized in that: described passivation layer comprises first passivation layer and second passivation layer, and wherein, described first passivation layer is formed in described other circuit regions, and described second passivation layer is formed in the described main pixel region.
3. imageing sensor as claimed in claim 2 is characterized in that: described second passivation layer also is formed in described other circuit regions.
4. imageing sensor as claimed in claim 3 is characterized in that, described second passivation layer covers described first passivation layer.
5. as each described imageing sensor in the claim 2 to 4, it is characterized in that the span of the thickness of described first passivation layer is
6. as each described imageing sensor in the claim 2 to 4, it is characterized in that the span of the thickness of described second passivation layer is
7. as each described imageing sensor in the claim 2 to 4, it is characterized in that described first passivation layer comprises silicon nitride.
8. as each each described imageing sensor in the claim 2 to 4, it is characterized in that described second passivation layer comprises silicon nitride or silicon oxynitride.
9. imageing sensor as claimed in claim 1 is characterized in that: described imageing sensor is a cmos image sensor.
10. imageing sensor as claimed in claim 9 is characterized in that: described cmos image sensor is a color cmos image sensors.
11. the manufacture method of an imageing sensor wherein, comprises the steps:
A. on substrate, form pad area, other circuit regions and active pixel district;
B. in described active pixel district, form main pixel region;
C. form passivation layer, described passivation layer exists only in described other circuit regions and the described main pixel region.
12. manufacture method as claimed in claim 11 is characterized in that, described step C comprises the steps:
C3. in described pad area, other circuit regions and active pixel district, form second passivation layer;
C4. remove described second passivation layer in the described pad area.
13. manufacture method as claimed in claim 12 is characterized in that, in described step C, and also comprises the steps: before described step C3
C1. in described pad area, other circuit regions and active pixel district, form first passivation layer;
C2. remove described first passivation layer in the described main pixel region;
Wherein, described step C4 also comprises:
Described first passivation layer in the described pad area of-removal.
14. manufacture method as claimed in claim 13 is characterized in that, described step C4 also comprises the steps:
Described second passivation layer in other circuit regions of-removal.
15. manufacture method as claimed in claim 13 is characterized in that, the span of the thickness of described first passivation layer is
16. manufacture method as claimed in claim 12 is characterized in that, the span of the thickness of described second passivation layer is
17. manufacture method as claimed in claim 13 is characterized in that, what the formation of described first passivation layer and second passivation layer was adopted is chemical vapor deposition.
18. method as claimed in claim 17 is characterized in that, described chemical vapor deposition comprises plasma enhanced chemical vapor deposition.
19. manufacture method as claimed in claim 14, it is characterized in that described first passivation layer in the described main pixel region of described removal, described first passivation layer in the described pad area of described removal, what remove described second passivation layer in the described pad area and remove that described second passivation layer in other circuit regions adopts is etching.
20. manufacture method as claimed in claim 19 is characterized in that, described etching comprises dry etching.
21. manufacture method as claimed in claim 13 is characterized in that, described first passivation layer comprises silicon nitride.
22. manufacture method as claimed in claim 12 is characterized in that, described second passivation layer comprises silicon nitride or silicon oxynitride.
23. imageing sensor as claimed in claim 11 is characterized in that: described imageing sensor is a cmos image sensor.
24. imageing sensor as claimed in claim 23 is characterized in that: described cmos image sensor is a color cmos image sensors.
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Cited By (7)
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| CN104576666A (en) * | 2013-10-17 | 2015-04-29 | 全视科技有限公司 | A backside illuminated image sensor and a manufacturing method thereof |
| CN106454163A (en) * | 2011-04-19 | 2017-02-22 | 阿尔塔传感器公司 | Image sensor with hybrid heterostructure |
| CN109299630A (en) * | 2017-07-24 | 2019-02-01 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor fingerprint sensor and preparation method thereof |
| CN109299629A (en) * | 2017-07-24 | 2019-02-01 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor fingerprint sensor and preparation method thereof |
| CN109308433A (en) * | 2017-07-27 | 2019-02-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor fingerprint sensor and preparation method thereof, electronic device |
| CN109308432A (en) * | 2017-07-27 | 2019-02-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor fingerprint sensor and preparation method thereof, electronic device |
| CN112041988A (en) * | 2019-04-28 | 2020-12-04 | 深圳市大疆创新科技有限公司 | Image sensor chip, manufacturing method, image sensor, and imaging device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106454163A (en) * | 2011-04-19 | 2017-02-22 | 阿尔塔传感器公司 | Image sensor with hybrid heterostructure |
| CN104576666A (en) * | 2013-10-17 | 2015-04-29 | 全视科技有限公司 | A backside illuminated image sensor and a manufacturing method thereof |
| CN104576666B (en) * | 2013-10-17 | 2017-12-19 | 豪威科技股份有限公司 | Backside illuminated image sensor and preparation method thereof |
| CN109299630A (en) * | 2017-07-24 | 2019-02-01 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor fingerprint sensor and preparation method thereof |
| CN109299629A (en) * | 2017-07-24 | 2019-02-01 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor fingerprint sensor and preparation method thereof |
| CN109299629B (en) * | 2017-07-24 | 2022-03-25 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor fingerprint sensor and manufacturing method thereof |
| CN109308433A (en) * | 2017-07-27 | 2019-02-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor fingerprint sensor and preparation method thereof, electronic device |
| CN109308432A (en) * | 2017-07-27 | 2019-02-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor fingerprint sensor and preparation method thereof, electronic device |
| CN109308432B (en) * | 2017-07-27 | 2022-06-28 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor fingerprint sensor, manufacturing method thereof and electronic device |
| CN109308433B (en) * | 2017-07-27 | 2022-09-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor fingerprint sensor, manufacturing method thereof and electronic device |
| CN112041988A (en) * | 2019-04-28 | 2020-12-04 | 深圳市大疆创新科技有限公司 | Image sensor chip, manufacturing method, image sensor, and imaging device |
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