CN101781755B - Method for preparing aluminum-based alloy with Al-Si-O-N wearproof anticorrosive layer - Google Patents

Method for preparing aluminum-based alloy with Al-Si-O-N wearproof anticorrosive layer Download PDF

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CN101781755B
CN101781755B CN2010101207167A CN201010120716A CN101781755B CN 101781755 B CN101781755 B CN 101781755B CN 2010101207167 A CN2010101207167 A CN 2010101207167A CN 201010120716 A CN201010120716 A CN 201010120716A CN 101781755 B CN101781755 B CN 101781755B
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base alloy
aluminum base
preoxidation
aluminum
layer
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CN101781755A (en
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王耐艳
于兆能
杜平凡
王龙成
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Zhejiang Sci Tech University ZSTU
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Abstract

The invention discloses a method for preparing an aluminum-based alloy with an Al-Si-O-N wearproof anticorrosive layer, which comprises the following steps of: performing routine chemical preoxidation treatment to form a micropore surface layer with an Al-O structure on the surface of the aluminum-based alloy; on the basis, performing radio-frequency plasma chemical vapor deposition on Si and N to penetrate Si and N atoms into a micropore film with the Al-O structure; and forming the aluminum-based alloy of which the surface contains an Al-Si-O-N ceramic layer through diffusion and infiltration of Si, Al, O and N elements. The Al-Si-O-N layer of the invention has the characteristics of certain toughness, high intensity, high temperature resistance, high hardness, high bending strength, high abrasive resistance, high corrosive resistance, high thermal shock resistance and the like and endows the aluminum alloy with new surface property; and the Al-Si-O-N surface layer and an aluminum alloy substrate have high binding force.

Description

Aluminum base alloy preparation method with the wear-resistant anticorrosion layer of Al-Si-O-N
Technical field
The present invention relates to wear-resistant pantal alloy material preparation method, especially relate to the aluminum base alloy preparation method of the wear-resistant anticorrosion layer of a kind of Al-Si-O-N of having.
Background technology
Aluminum base alloy is the lightweight structural material of industrial circle widespread use, aluminum base alloy rigidity is low then, frictional coefficient is big, be difficult to lubricate, the deficiency of performances such as wear resistance and seizure resistance difference, influence the range of application and the work-ing life of aluminum base alloy, greatly limited the application of aluminum base alloy on the automobile with relatively sliding requirement, motorcycle, aerospace component.
The chemical property of aluminium is active, and the aluminum base alloy surface often has fine and close natural oxide film, but the natural oxide film physical strength of tens dust thickness is low, easily goes to pot, and is very limited to the provide protection of matrix, can't satisfy the various strict demands of modern industry development.Surface Hardening Treatment is the key that promotes the aluminum base alloy over-all properties, handle as aluminum alloy surface strengthenings such as anodic oxidation, plasma electrolytic oxidation, differential arc oxidations, though these technologies can suitably improve the strong bonded top coat of surface hardness, acquisition and the matrix of aluminium, but the porous structure alumina layer that the aluminum base alloy surface forms, can not resist the corrosion that contains the chlorion media environment, the raising of wear resistance and seizure resistance is not obvious simultaneously.Development along with the modern Application technology, plasma spraying process and Laser Cladding Treatment method obtain to use in the aluminum base alloy surface Hardening Treatment in succession, aluminium and aluminum alloy surface nitriding method are disclosed as patent CN86105732A, to improve aluminium and intensity of aluminum alloy and wear resistance, the characteristics of higher processing temperature requirement are extremely improper for the lower aluminium alloy of fusing point, easily cause the havoc of body material performance.And sol-gel method, brush plates local high speed electro-deposition method, Ni-P anodised aluminium pore packing lubrication material, in the hope of strengthening the anti-wear and wear-resistant performance of aluminum base alloy, patent CN1227282A discloses aluminium alloy cylinder inner wall nickel pottery (Ni-SiC) composite plating process, make engine cylinder durable in use, power stability, but there is the composition sudden change between this surface composite layer and the matrix, top layer and matrix are discontinuous, there is bigger thermal stresses, cause that peeling in use appears in coating, be full of cracks, phenomenon such as tiny crack and foaming causes performance can't reach service requirements and fails really to be adopted by actual production.
Summary of the invention
The object of the present invention is to provide the aluminum base alloy preparation method of the wear-resistant anticorrosion layer of a kind of Al-Si-O-N of having, the applied chemistry vapor phase process is at aluminum base alloy material, the wear-resistant anticorrosion layer of piece surface uniform deposition Al-Si-O-N, form new surface tissue, improve wear resistant friction reducing, the corrosion resistance of aluminum base alloy.
Al-Si-O-N is a kind of settled layer with ceramic characteristics, and it is high temperature resistant, high strength, and certain toughness is arranged, and has unusual high rigidity, bending strength, anti-friction wear-resistant, corrosion-resistant, resistance to sudden heating and radiation resistance, excellent electric insulating and thermal conductivity.The Al-O group that aluminum alloy material surface often has, similar to Si-O, Si-N unit structure, can ooze mutually under proper condition, dissolve each other forms the Al-Si-O-N ceramic layer.The present invention adopts the aluminum base alloy surface preoxidizing, ammonia and silane gas low-temperature decomposition, chemical gas phase reaction deposition obtain the novel surface of Al-Si-O-N structure, by meticulous component proportions of regulating Si, Al, O, N element, control Si, Al, O, N elemental diffusion and process of osmosis, change aluminum base alloy upper layer composition, structure and with the bonding force of matrix, obtain densification, adhesion, the meticulous controlled Al-Si-O-N ceramic layer of structure, improve the comprehensive mechanical performance of aluminum base alloy.
The step of the technical solution used in the present invention is as follows:
Step 1: the aluminum base alloy matrix carries out pre-oxidation treatment
Surface contaminants and oxide compound are removed in (1-1) mechanical polishing;
(1-2) the ultrasonic wave acetone soln cleans 10~15min, and deionized water rinsing is removed surface contamination and degreasing degreasing;
(1-3) with NaOH or KOH electrochemical deoiling, concentration is 2~5g/L, and the oil removing time is 2~10min, and with nitric acid neutralization, concentration of nitric acid is 100~200g/L, in and the time be 2~10min;
(1-4) preoxidation, at soda ash: the Sodium chromate weight percent is 1: 3~5, and concentration is 50~100g/L, 90~100 ℃ of treatment temps, preoxidation time 3~8min, deionized water rinsing dries up, and obtains having the surface tissue of preoxidation film;
Step 2: the aluminum base alloy matrix with preoxidation film carries out the plasma CVD depositing treatment, and preparation contains the upper layer of Al, O, Si and N component
(2-1) pretreated sample is packed in the PECVD CVD (Chemical Vapor Deposition) chamber, system is evacuated down to 3Pa, logical high-purity H 2Open radio frequency, produce glow discharge and bombard purification activating aluminum alloy surface 10~20min in advance, make its surface active, purification, heat to 300~500 ℃;
(2-2) with N 2Be carrier gas, logical SiH 4And NH 3The work source of the gas, gas flow rate is 120ml/min~200ml/min, source gas flow ratio: N 2: SiH 4: NH 3=9: 1: 2~9, deposition pressure 10~200Pa, radio frequency power 60~150w, depositing time 10~30min obtains containing the upper layer of Al, O, Si and N component;
Step 3: the upper layer aluminum base alloy matrix that contains Al, O, Si and N component carries out heat diffusion treatment
Control sediment chamber temperature is 450-500 ℃, continues the logical H with 50-100ml/min 2, it is constant that pressure keeps, insulation 60min, impel and be adsorbed on surperficial activity [Si], [N] atom to internal divergence, and generate the Al-Si-O-N ceramic film with the effect of preoxidation stratification, below the furnace cooling to 100 ℃, take out the alumina-base material that obtains having the Al-Si-O-N rete.
Described source of the gas is through N 2Dilute Si H 4Concentration be 10%, high-purity N H 3Purity be 99.999%, high-purity H 2Purity be 99.999%.
Described PECVD chemical vapor depsotition equipment is that HQ-2 type radio-frequency plasma strengthens chemical vapor depsotition equipment.
The beneficial effect that the present invention has is:
Al-Si-O-N layer of the present invention has characteristics such as certain toughness, high strength, high temperature resistant, high rigidity, bending strength, anti-friction wear-resistant, corrosion-resistant, resistance to sudden heating and gives aluminium alloy new surface property, Al-Si-O-N upper layer and alloy matrix aluminum bonding force are strong, dense structure, internal stress is little, greatly improves the work-ing life with relatively sliding aluminum alloy part.
Embodiment
Embodiment 1:
Step 1: ZL101 commonly used is a matrix with industry, carries out pre-oxidation treatment:
(1) surface contaminants and oxide compound are removed in mechanical polishing;
(2) the ultrasonic wave acetone soln cleans 10min, and deionized water rinsing is removed surface contamination and degreasing degreasing;
(3) alkali electroless oil removing, 2g/L sodium hydroxide solution normal temperature washing 2min, in the 100g/L salpeter solution and 2min, rinsed with deionized water, being continuously uniformly until surperficial moisture film, moisture film is that oil removing is clean;
(4) preoxidation, at soda ash: Sodium chromate is 1: 3, and concentration is in the 50g/L solution, 90 ℃ of preoxidation 3min clean 10min at the deionized water for ultrasonic ripple then, obtain having the surface tissue of preoxidation film.
Step 2: the ZL101 with preoxidation film carries out the plasma CVD depositing treatment, and preparation contains the upper layer of Al, O, Si, N component:
(1) pretreated sample is packed in the PECVD CVD (Chemical Vapor Deposition) chamber, system is evacuated down to 3Pa, logical high-purity H 2Open radio frequency generation glow discharge and bombard purification in advance, activating aluminum alloy surface 10min.And be heated to 300 ℃;
(2) with N 2Be carrier gas, logical SiH 4, NH 3Work gas, gas flow rate is 120ml/min, source gas flow ratio: N 2: SiH 4: NH 3=9: 1: 2, deposition pressure 10Pa, radio frequency power 60w, depositing time 10min obtains containing the upper layer of Al, O, Si, N component.
Step 3: heat diffusion treatment, control sediment chamber temperature is at 450 ℃, and it is constant that pressure keeps, and continues the logical H with 50ml/min 2, insulation 60min impels the activity [Si], [N] atom that are adsorbed on the surface to internal divergence, and generates the Al-Si-O-N ceramic film with the effect of preoxidation stratification, below the furnace cooling to 100 ℃, takes out the alumina-base material that obtains having the Al-Si-O-N rete.Sem analysis shows the about 20 μ m of thickness, and rete and matrix bond are good, film smooth surface, densification, and film hardness reaches 108HV, handles through 10 thermal shock quenchings, bubble, peeling, peeling phenomenon do not occur.
Embodiment 2:
Step 1: the ZL101 commonly used with industry is matrix, carries out pre-oxidation treatment:
(1) surface contaminants and oxide compound are removed in mechanical polishing;
(2) the ultrasonic wave acetone soln cleans 15min, and deionized water rinsing is removed surface contamination and degreasing degreasing;
(3) alkali electroless oil removing, the 5g/L potassium hydroxide solution, normal temperature washing 10min, in the 200g/L salpeter solution and 10min, rinsed with deionized water, being continuously uniformly until surperficial moisture film, moisture film is that oil removing is clean;
(4) preoxidation, at soda ash: Sodium chromate is 1: 5, and concentration is in the 100g/L solution, preoxidation 8min under 100 ℃ of temperature cleans 15min at the deionized water for ultrasonic ripple then, obtains having the surface tissue of preoxidation film.
Step 2: the ZL101 with preoxidation film carries out the plasma CVD depositing treatment, and preparation contains the upper layer of Al, O, Si, N component:
(1) pretreated sample is packed in the PECVD CVD (Chemical Vapor Deposition) chamber, system vacuumizes 3Pa, logical high-purity H 2Open radio frequency generation glow discharge and bombard purification in advance, activating aluminum alloy surface 20min, and be heated to 500 ℃;
(2) with N 2Be carrier gas, logical SiH 4, NH 3Work gas, gas flow rate is 200ml/min, source gas flow ratio: N 2: SiH 4: NH 3=9: 1: 9, control deposition pressure 200Pa, radio frequency power 150w, depositing time 30min obtains containing the upper layer of Al, O, Si, N component.
Step 3: heat diffusion treatment, control sediment chamber temperature is at 500 ℃, and it is constant that pressure keeps, and continues the logical H with 100ml/min 2, insulation 60min impels the activity [Si], [N] atom that are adsorbed on the surface to internal divergence, and generates the Al-Si-O-N ceramic film with the effect of preoxidation stratification, below the furnace cooling to 100 ℃, takes out the alumina-base material that obtains having the Al-Si-O-N rete.Sem analysis shows that thickness is 35 μ m, and rete and matrix bond are good, film smooth surface, densification, and film hardness reaches 180HV, handles through 10 thermal shock quenchings, bubble, peeling, peeling phenomenon do not occur.
Embodiment 3
Step 1: the ZL101 commonly used with industry is matrix, carries out pre-oxidation treatment:
(1) surface contaminants and oxide compound are removed in mechanical polishing;
(2) the ultrasonic wave acetone soln cleans 12min, and deionized water rinsing is removed surface contamination and degreasing degreasing;
(3) alkali electroless oil removing, the 3g/L sodium hydroxide solution, normal temperature washing 5min, in the 150g/L salpeter solution and 6min, rinsed with deionized water, being continuously uniformly until surperficial moisture film, moisture film is that oil removing is clean;
(4) preoxidation, at soda ash: Sodium chromate is 1: 4, and concentration is in the 75g/L solution, preoxidation 4min under 95 ℃ of temperature cleans 12min at the deionized water for ultrasonic ripple then, obtains having the surface tissue of preoxidation film.
Step 2: the ZL101 with preoxidation film carries out the plasma CVD depositing treatment, and preparation contains the upper layer of Al, O, Si, N component:
(1) pretreated sample is packed in the PECVD CVD (Chemical Vapor Deposition) chamber, system vacuumizes 3Pa, logical high-purity H 2Open radio frequency and produce glow discharge and bombard in advance and purify 15min, activating aluminum alloy surface, and heating sample to 400 ℃;
(2) with N 2Be carrier gas, SiH 4, NH 3Be reactant gas source, gas flow rate is 150ml/min, source gas flow ratio: N 2: SiH 4: NH 3=9: 1: 4, deposition pressure 100Pa, radio frequency power 120w, 400 ℃ of depositing temperatures, depositing time 20min obtains containing the upper layer of Al, O, Si, N component.
Step 3: heat diffusion treatment, control sediment chamber temperature is at 500 ℃, and it is constant that pressure keeps, and continues the logical H with 75ml/min 2, insulation 60min impels the activity [Si], [N] atom that are adsorbed on the surface to internal divergence, and generates the Al-Si-O-N ceramic film with the effect of preoxidation stratification, below the furnace cooling to 100 ℃, takes out the alumina-base material that obtains having the Al-Si-O-N rete.Sem analysis shows that thickness is 30 μ m, and rete and matrix bond are good, film smooth surface, densification, and film hardness reaches 170HV, handles through 10 thermal shock quenchings, bubble, peeling, peeling phenomenon do not occur.
Embodiment 4
Step 1: with industry ADC12 alloy commonly used is matrix, carries out pre-oxidation treatment:
(1) surface contaminants and oxide compound are removed in mechanical polishing;
(2) the ultrasonic wave acetone soln cleans 10min, and deionized water rinsing is removed surface contamination and degreasing degreasing;
(3) alkali electroless oil removing, the 2g/L sodium hydroxide solution, normal temperature washing 2min, in the 100g/L salpeter solution and 3min, rinsed with deionized water, being continuously uniformly until surperficial moisture film, moisture film is that oil removing is clean;
(4) preoxidation, at soda ash: Sodium chromate is 1: 3, and concentration is in the 50g/L solution, and preoxidation 3min under 90 ℃ of temperature then through deionized water ultrasonic cleaning 10min, obtains having the surface tissue of preoxidation film.
Step 2: the ADC12 alloy with preoxidation film carries out the plasma CVD depositing treatment, and preparation contains the upper layer of Al, O, Si, N component:
(1) pretreated ADC12 alloy is packed in the CVD (Chemical Vapor Deposition) chamber, system is evacuated down to 3Pa, and logical high-purity H2 opens radio frequency and produces glow discharge and bombard purification in advance, activating aluminum alloy surface 15min, and heated sample to 300 ℃;
(2) with N 2Be carrier gas, gas flow rate is 120ml/min, source gas flow ratio: N 2: SiH 4: NH 3=9: 1: 2, control deposition pressure 10Pa, radio frequency power 80w, depositing time 20min obtains containing the upper layer of Al, O, Si, N component.
Step 3: heat diffusion treatment, control sediment chamber temperature is at 450 ℃, and it is constant that pressure keeps, and continues the logical H with 100ml/min 2, insulation 60min impels the activity [Si], [N] atom that are adsorbed on the surface to internal divergence, and generates the Al-Si-O-N ceramic film with the effect of preoxidation stratification, below the furnace cooling to 100 ℃, takes out the alumina-base material that obtains having the Al-Si-O-N rete.Sem analysis shows that thickness is 25 μ m, and rete and matrix bond are good, film smooth surface, densification, and film hardness reaches 175HV, handles through 10 thermal shock quenchings, bubble, peeling, peeling phenomenon do not occur.
Embodiment 5
Step 1: the ADC12 alloy commonly used with industry is matrix, carries out pre-oxidation treatment:
(1) surface contaminants and oxide compound are removed in mechanical polishing;
(2) the ultrasonic wave acetone soln cleans 15min, and deionized water rinsing is removed surface contamination and degreasing degreasing;
(3) alkali electroless oil removing, the 5g/L sodium hydroxide solution, normal temperature washing 5min, in the 200g/L salpeter solution and 5min, rinsed with deionized water, being continuously uniformly until surperficial moisture film, moisture film is that oil removing is clean;
(4) preoxidation, at soda ash: Sodium chromate is 1: 5, and concentration is in the 100g/L solution, preoxidation 5min under 95 ℃ of temperature cleans 15min at the deionized water for ultrasonic ripple then, obtains having the surface tissue of preoxidation film.
Step 2: the ADC12 alloy with preoxidation film carries out the plasma CVD depositing treatment, and preparation contains the upper layer of Al, O, Si, N component:
(1) pretreated sample is packed in the CVD (Chemical Vapor Deposition) chamber, system is evacuated down to 3Pa, logical high-purity H 2Open radio frequency and produce glow discharge and bombard purification in advance, activating aluminum alloy surface 10min, and heated sample to 500 ℃;
(2) with N 2Be carrier gas, SiH 4, NH 3Be reactant gas source, gas flow rate is 200ml/min, gas flow ratio: N 2: SiH 4: NH 3=9: 1: 4, deposition pressure 100Pa, radio frequency power 120w, 500 ℃ of depositing temperatures, depositing time 30min obtains containing the upper layer of Al, O, Si, N component.
Step 3: heat diffusion treatment, control sediment chamber temperature is at 500 ℃, and it is constant that pressure keeps, and continues the logical H with 100ml/min 2, insulation 60min impels the activity [Si], [N] atom that are adsorbed on the surface to internal divergence, and generates the Al-Si-O-N ceramic film with the effect of preoxidation stratification, below the furnace cooling to 100 ℃, takes out the alumina-base material that obtains having the Al-Si-O-N rete.Sem analysis shows the about 30 μ m of thickness, and rete and matrix bond are good, film smooth surface, densification, and film hardness reaches 200HV, handles through 10 thermal shock quenchings, bubble, peeling, peeling phenomenon do not occur.

Claims (3)

1. aluminum base alloy preparation method with the wear-resistant anticorrosion layer of A1-Si-O-N is characterized in that the step of this method is as follows:
Step 1: the aluminum base alloy matrix carries out pre-oxidation treatment
Surface contaminants and oxide compound are removed in (1-1) mechanical polishing;
(1-2) the ultrasonic wave acetone soln cleans 10~15min, and deionized water rinsing is removed surface contamination and degreasing degreasing;
(1-3) with NaOH or KOH electrochemical deoiling, concentration is 2~5g/L, and the oil removing time is 2~10min, and with nitric acid neutralization, concentration of nitric acid is 100~200g/L, in and the time be 2~10min;
(1-4) preoxidation, at soda ash: the Sodium chromate weight percent is 1: 3~5, and concentration is 50~100g/L, 90~100 ℃ of treatment temps, preoxidation time 3~8min, deionized water rinsing dries up, and obtains having the surface tissue of preoxidation film;
Step 2: the aluminum base alloy matrix with preoxidation film carries out the plasma CVD depositing treatment, and preparation contains the upper layer of Al, O, Si and N component
(2-1) pretreated sample is packed in the PECVD CVD (Chemical Vapor Deposition) chamber, system is evacuated down to 3Pa, logical high-purity H 2Open radio frequency, produce glow discharge and bombard purification activation aluminum base alloy surface 10~20min in advance, make its surface active, purification, heat to 300~500 ℃;
(2-2) with N 2Be carrier gas, logical SiH 4And NH 3The work source of the gas, gas flow rate is 120ml/min~200ml/min, source gas flow ratio: N 2: SiH 4: NH 3=9: 1: 2~9, deposition pressure 10~200Pa, radio frequency power 60~150w, depositing time 10~30min obtains containing the upper layer of Al, O, Si and N component;
Step 3: the upper layer aluminum base alloy matrix that contains Al, O, Si and N component carries out heat diffusion treatment
Control sediment chamber temperature is 450-500 ℃, continues the logical H with 50-100ml/min 2, it is constant that pressure keeps, insulation 60min, impel and be adsorbed on surperficial active Si, N atom to internal divergence, and generate the Al-Si-O-N ceramic film with the effect of preoxidation stratification, below the furnace cooling to 100 ℃, take out the aluminum base alloy that obtains having the wear-resistant anticorrosion layer of Al-Si-O-N.
2. a kind of aluminum base alloy preparation method with the wear-resistant anticorrosion layer of Al-Si-O-N according to claim 1 is characterized in that: described source of the gas is through N 2Dilute Si H 4Concentration be 10%, high-purity N H 3Purity be 99.999%, high-purity H 2Purity be 99.999%.
3. a kind of aluminum base alloy preparation method with the wear-resistant anticorrosion layer of Al-Si-O-N according to claim 1 is characterized in that: described PECVD chemical vapor depsotition equipment is that HQ-2 type radio-frequency plasma strengthens chemical vapor depsotition equipment.
CN2010101207167A 2010-03-09 2010-03-09 Method for preparing aluminum-based alloy with Al-Si-O-N wearproof anticorrosive layer Expired - Fee Related CN101781755B (en)

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CN107868945B (en) * 2017-11-15 2019-04-12 上海凤凰自行车江苏有限公司 A kind of surface treatment method of aluminium alloy bicycle frame

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US6043152A (en) * 1999-05-14 2000-03-28 Taiwan Semiconductor Manufacturing Company Method to reduce metal damage in the HDP-CVD process by using a sacrificial dielectric film
CN101161857A (en) * 2007-11-15 2008-04-16 浙江理工大学 Aluminum alloy surface treatment method
CN101210318A (en) * 2007-12-25 2008-07-02 浙江理工大学 Method for coating silicon nitride film layer on piston ring surface

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JP2005506695A (en) * 2001-10-16 2005-03-03 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステート ユニバーシティ Low temperature epitaxial growth of quaternary wide band gap semiconductors

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US6043152A (en) * 1999-05-14 2000-03-28 Taiwan Semiconductor Manufacturing Company Method to reduce metal damage in the HDP-CVD process by using a sacrificial dielectric film
CN101161857A (en) * 2007-11-15 2008-04-16 浙江理工大学 Aluminum alloy surface treatment method
CN101210318A (en) * 2007-12-25 2008-07-02 浙江理工大学 Method for coating silicon nitride film layer on piston ring surface

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