CN101750899B - 光刻版图及其测量光刻形变的方法 - Google Patents
光刻版图及其测量光刻形变的方法 Download PDFInfo
- Publication number
- CN101750899B CN101750899B CN2008100440538A CN200810044053A CN101750899B CN 101750899 B CN101750899 B CN 101750899B CN 2008100440538 A CN2008100440538 A CN 2008100440538A CN 200810044053 A CN200810044053 A CN 200810044053A CN 101750899 B CN101750899 B CN 101750899B
- Authority
- CN
- China
- Prior art keywords
- lithography
- rotary
- cutting road
- layout
- deformation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100440538A CN101750899B (zh) | 2008-12-04 | 2008-12-04 | 光刻版图及其测量光刻形变的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100440538A CN101750899B (zh) | 2008-12-04 | 2008-12-04 | 光刻版图及其测量光刻形变的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101750899A CN101750899A (zh) | 2010-06-23 |
CN101750899B true CN101750899B (zh) | 2011-06-22 |
Family
ID=42478022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100440538A Active CN101750899B (zh) | 2008-12-04 | 2008-12-04 | 光刻版图及其测量光刻形变的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101750899B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102566339A (zh) * | 2011-11-02 | 2012-07-11 | 上海宏力半导体制造有限公司 | 全局对准标记以及全局对准方法 |
CN103176350A (zh) * | 2011-12-26 | 2013-06-26 | 和舰科技(苏州)有限公司 | 一种使晶圆上芯片数量最大化的光罩制作方法 |
CN108732861A (zh) * | 2018-04-26 | 2018-11-02 | 上海华力集成电路制造有限公司 | 一种集成电路研发用掩膜板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5250983A (en) * | 1991-07-12 | 1993-10-05 | Nec Corporation | Photo reticle for fabricating a semiconductor device |
US6118517A (en) * | 1996-08-29 | 2000-09-12 | Nec Corporation | Mask pattern for alignment |
WO2002035288A1 (en) * | 2000-10-23 | 2002-05-02 | Advanced Micro Devices, Inc. | System and method for facilitating wafer alignment by mitigating effects of reticle rotation on overlay |
CN1690859A (zh) * | 2004-04-23 | 2005-11-02 | 上海华虹Nec电子有限公司 | 用于光刻套刻的划片槽结构 |
-
2008
- 2008-12-04 CN CN2008100440538A patent/CN101750899B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5250983A (en) * | 1991-07-12 | 1993-10-05 | Nec Corporation | Photo reticle for fabricating a semiconductor device |
US6118517A (en) * | 1996-08-29 | 2000-09-12 | Nec Corporation | Mask pattern for alignment |
WO2002035288A1 (en) * | 2000-10-23 | 2002-05-02 | Advanced Micro Devices, Inc. | System and method for facilitating wafer alignment by mitigating effects of reticle rotation on overlay |
CN1690859A (zh) * | 2004-04-23 | 2005-11-02 | 上海华虹Nec电子有限公司 | 用于光刻套刻的划片槽结构 |
Non-Patent Citations (1)
Title |
---|
JP特开平8-321533A 1996.12.03 |
Also Published As
Publication number | Publication date |
---|---|
CN101750899A (zh) | 2010-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101644898B (zh) | 不同倍率光刻机之间的套刻精度的测量方法 | |
US20150179584A1 (en) | Alignment mark arrangement, semiconductor workpiece, and method for aligning a wafer | |
KR20000006182A (ko) | 물결무늬패턴을사용한오버레이측정법 | |
CN101750899B (zh) | 光刻版图及其测量光刻形变的方法 | |
CN113534626B (zh) | 用于套刻精度测量的标记***及量测方法 | |
CN102445858B (zh) | 一种光刻机之间的工艺匹配方法 | |
CN101526753A (zh) | 工件台坐标系参数测量方法 | |
CN102466977B (zh) | 用于测量投影物镜畸变的标记结构及方法 | |
CN201897692U (zh) | 带对准标记的掩模版 | |
CN101789386B (zh) | 晶片对准的方法 | |
CN105740540B (zh) | 掩膜版设计中版图的特征图形的查找方法 | |
JP2007335550A (ja) | 半導体装置 | |
CN101713912B (zh) | 光刻光掩模、对准方法和检验对准精确度的方法 | |
CN103050490B (zh) | 划片槽框架自动设计方法 | |
CN112563151A (zh) | 套刻精度的量测方法 | |
CN102749815B (zh) | 套刻精度的检测方法 | |
CN102522360B (zh) | 光刻对准精度检测方法 | |
CN103832966B (zh) | 半导体器件的形成方法及检测方法 | |
CN111128829A (zh) | 对准方法及校准方法 | |
CN112180691B (zh) | 拼接芯片的线上监控方法 | |
CN102446902B (zh) | 一种集成尺寸量测和套刻精度检测的图形结构及检测方法 | |
CN202093317U (zh) | 基于机器视觉对准的高精度对准标记结构 | |
CN203787419U (zh) | 一种用于检测对准偏差的测试结构 | |
CN115881739A (zh) | 拼接制造图像传感器的拼接套刻精度检测方法 | |
CN203084413U (zh) | 一种掩膜板组和标记实体台 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |