CN101747842B - Chemical-mechanical polishing solution - Google Patents
Chemical-mechanical polishing solution Download PDFInfo
- Publication number
- CN101747842B CN101747842B CN200810207470.XA CN200810207470A CN101747842B CN 101747842 B CN101747842 B CN 101747842B CN 200810207470 A CN200810207470 A CN 200810207470A CN 101747842 B CN101747842 B CN 101747842B
- Authority
- CN
- China
- Prior art keywords
- apply
- star
- dioxide
- affinity groups
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses chemical-mechanical polishing solution, containing one or more star polymers containing pigment affinity groups, ground particles and water. The polishing solution can obviously lower the removal rate of polysilicon, reduce the selection ratio of polysilicon to silicon dioxide and obviously improve the planarization efficiency of polysilicon.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
For the polishing of polysilicon, be mainly used in two kinds of chips at present, one is dynamic RAM (DRAM), and one is flash memory (Flash).The latter often relates to the polishing to silicon-dioxide in the application.
In prior art, mainly come polishing polycrystalline silicon layer and silicon-dioxide (as HDP) layer with the alkaline slurry being abrasive grains containing silicon-dioxide, the removal speed of its polysilicon is often much higher than the removal speed of silicon-dioxide, easily cause the excessive removal of polysilicon and produce depression, impact technique subsequently.
US2003/0153189A1 discloses a kind of chemical mechanical polishing liquid for polishing polycrystalline silicon and using method thereof.This polishing fluid comprises a kind of polymeric surfactant and a kind of abrasive grains being selected from aluminum oxide and cerium oxide, and this polymeric surfactant is polycarboxylate tensio-active agent.The polishing speed of polysilicon surface bulk region can be made to be much higher than polishing speed in groove with this slurry, thus reduce depression.US2003/0216003 A1 and US2004/0163324 A1 discloses a kind of method manufacturing Flash.Comprising a kind of polishing fluid of polishing polycrystalline silicon, comprise at least one in this polishing fluid and contain-N (OH) ,-NH (OH) ,-NH
2(OH) compound of group.The polysilicon of this slurry and the polishing Selection radio of silicon-dioxide are greater than 50.US2004/0014321A1 discloses a kind of acid polishing slurry comprising abrasive grains and oxygenant, uses this slurry can improve the polishing Selection radio of polysilicon and silicon-dioxide.US2004/0123528 A1 discloses a kind of acid polishing slurry comprising abrasive grains and anionic compound.This anionic compound can reduce the removal speed of protective layer film, improves the removal rate selection ratio of polysilicon and protective layer film.US2005/0130428 A1 and CN1637102 A discloses a kind of slurry for polysilicon chemical mechanical polishing.This slurry comprises one or more nonionogenic tensides that can form passivation layer on the polysilicon layer and a kind of second surface promoting agent that can form the second passivation layer can reduce silicon nitride or silicon oxide removing speed.This nonionogenic tenside comprises oxyethane ~ propylene oxide block copolymer alcohol and/or oxyethane ~ propylene oxide triblock polymer.This slurry can by the removal rate selection of polysilicon and isolator than at least reducing about 50%.
Summary of the invention
Technical problem to be solved by this invention be overcome existing in the chemical mechanical polishing liquid of polishing polycrystalline silicon and silicon dioxide layer, polysilicon removes the removal speed of speed far above silicon-dioxide, easily cause the excessive removal of polysilicon and produce the defect of depression, and providing a kind of and there is lower polysilicon remove speed and lower polysilicon to the chemical mechanical polishing liquid of silicon-dioxide Selection radio.
Chemical mechanical polishing liquid of the present invention contains one or more star-type polymers containing pigment affinity groups, abrasive grains and water.
Wherein, the described star-type polymer containing pigment affinity groups, significantly can reduce the removal speed of polysilicon, but do not affect the removal speed of silicon-dioxide, thus reduce the Selection radio of polysilicon and silicon-dioxide, reduce depression, significantly improve the planarization efficiency of polysilicon.
In the present invention, described pigment affinity groups refers to the group containing one or more elements in aerobic, nitrogen and sulphur, is preferably one or more in hydroxyl, amino and carboxyl; Described star-type polymer refers to and centered by a symmetry centre, connect the polymkeric substance of more than three or three molecular chains with radial shape in molecule.The described kind containing pigment affinity groups contained in the star-type polymer of pigment affinity groups can be one or more.
The described star-type polymer containing pigment affinity groups can be homopolymer or multipolymer.The polymerization single polymerization monomer forming this polymkeric substance preferably comprise following in one or more: acrylic monomer, acrylic ester monomer, acrylamide monomers and oxyethane.Wherein, described acrylic monomer is preferably vinylformic acid and/or methacrylic acid; Described acrylic ester monomer is preferably one or more in methyl acrylate, methyl methacrylate, ethyl propenoate, β-dimethyl-aminoethylmethacrylate, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate, Hydroxyethyl acrylate and hydroxyethyl methylacrylate; Described acrylamide monomers is preferably acrylamide and/or Methacrylamide.
Preferably, form the above-mentioned polymerization single polymerization monomer that can also contain other containing the monomer in the star-type polymer of pigment affinity groups, as other vinyl monomers, optimal ethylene, propylene, vinylbenzene and p-methylstyrene.In the present invention, described vinyl monomer refers to the polymerization single polymerization monomer containing vinyl units.
In the present invention, the preferred star-type polymer containing pigment affinity groups is the star-like homopolymer of polyacrylic acid, the binary star copolymer of vinylbenzene and Hydroxyethyl acrylate, the binary star copolymer of p-methylstyrene and oxyethane, the binary star copolymer of vinylbenzene and oxyethane, the binary star copolymer of methyl methacrylate and oxyethane, the binary star copolymer of methyl acrylate and Hydroxyethyl acrylate, the binary star copolymer of vinylformic acid and Hydroxyethyl acrylate, and vinylformic acid, one or more in the ternary star copolymer of butyl acrylate and acrylamide.
In the present invention, the number-average molecular weight of the described star-type polymer containing pigment affinity groups is preferably 800-50000, and that better is 800-10000.The described star-type polymer content containing pigment affinity groups is preferably mass percent 0.0005% ~ 3%, and better is 0.001% ~ 1%;
Described abrasive grains is the various abrasive grains that this area routine uses, and can be selected from silicon-dioxide, aluminium sesquioxide, the silicon-dioxide of adulterated al, the silicon-dioxide of aluminium coating, cerium dioxide, titanium dioxide and polymer abrasive grains as one or more in polystyrene.The particle diameter of abrasive grains is preferably 20 ~ 150nm, and that better is 30 ~ 120nm.The content of described abrasive grains is preferably mass percent 0.1 ~ 30%, is more preferred from mass percent 1 ~ 20%.
The pH of polishing fluid of the present invention is preferably 7 ~ 12.
In polishing fluid of the present invention, can also other conventional additives of this area be contained, as pH adjusting agent, viscosity modifier and defoamer etc.
Polishing fluid of the present invention is by the simple Homogeneous phase mixing of mentioned component, and adopting pH adjusting agent to be adjusted to suitable ph afterwards can obtain.PH adjusting agent can select this area conventional pH regulators, as potassium hydroxide, ammoniacal liquor and nitric acid etc.
In the present invention, agents useful for same and raw material are all commercially.
Positive progressive effect of the present invention is: polishing fluid of the present invention has lower polysilicon and removes speed, and polysilicon is to the removal rate selection ratio of silicon-dioxide, can reduce depression, significantly improve the planarization efficiency of polysilicon.
Embodiment
Further illustrate the present invention by embodiment below, but the present invention is not limited.
Embodiment 1 ~ 22
Table 1 gives the formula of polishing fluid 1 ~ 22 of the present invention, each component is mixed by table 1, and water supplies mass percent 100%, adopts potassium hydroxide and nitric acid to be adjusted to suitable ph afterwards and can obtain each polishing fluid.
Table 1 polishing fluid 1 ~ 22 is filled a prescription
Effect example
Table 2 gives the formula of contrast polishing fluid 1 and polishing fluid of the present invention 23 ~ 29, and each component mixed by table 2, water supplies mass percent to 100%, adopts potassium hydroxide and nitric acid to be adjusted to suitable ph afterwards and can obtain each polishing fluid.
Above-mentioned each polishing fluid is used for polishing polycrystalline silicon and silicon-dioxide, the processing parameter of polishing is: overdraft 3psi, the rotating speed 70rpm of polishing disk (diameter 14 inches), rubbing head rotating speed 80rpm, polishing slurries flow velocity 200ml/min, polishing pad is politex, and polishing machine is Logitech LP50.Result is as shown in table 2.
Table 2 contrasts the formula of polishing fluid 1 and polishing fluid 23 ~ 29 and the removal speed to polysilicon and silicon-dioxide
From contrasting polishing fluid 1 and polishing fluid of the present invention 23 ~ 25 in table 2, after adding the star-type polymer containing pigment affinity groups, it is substantially constant that silicon-dioxide removes speed, and polysilicon removal speed significantly reduces, and the Selection radio of polysilicon to silicon-dioxide also significantly reduces thereupon.The abrasive grains content of polishing fluid 26 ~ 29 and pH have different change, but all have lower polysilicon and remove speed and lower polysilicon to the polishing Selection radio of silicon-dioxide.
Claims (16)
1. the application of chemical mechanical polishing liquid in the removal rate selection ratio reducing polysilicon and silicon-dioxide, it contains one or more star-type polymers containing pigment affinity groups, abrasive grains and water.
2. apply as claimed in claim 1, it is characterized in that: described pigment affinity groups is one or more in hydroxyl, amino and carboxyl.
3. apply as claimed in claim 1, it is characterized in that: the polymerization single polymerization monomer of star-type polymer containing pigment affinity groups described in formation comprise following in one or more: acrylic monomer, acrylic ester monomer, acrylamide monomers and oxyethane.
4. apply as claimed in claim 3, it is characterized in that: described acrylic monomer is vinylformic acid and/or methacrylic acid; Described acrylic ester monomer is one or more in methyl acrylate, methyl methacrylate, ethyl propenoate, β-dimethyl-aminoethylmethacrylate, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate, Hydroxyethyl acrylate and hydroxyethyl methylacrylate; Described acrylamide monomers is acrylamide and/or Methacrylamide.
5. as the application that claim 3 is stated, it is characterized in that: the monomer contained in the star-type polymer of pigment affinity groups described in formation also comprises other vinyl monomers.
6. apply as claimed in claim 5, it is characterized in that: other described vinyl monomers are ethene, propylene, vinylbenzene and p-methylstyrene.
7. apply as claimed in claim 1, it is characterized in that: the described star-type polymer containing pigment affinity groups is the star-like homopolymer of polyacrylic acid, the binary star copolymer of vinylbenzene and Hydroxyethyl acrylate, the binary star copolymer of p-methylstyrene and oxyethane, the binary star copolymer of vinylbenzene and oxyethane, the binary star copolymer of methyl methacrylate and oxyethane, the binary star copolymer of methyl acrylate and Hydroxyethyl acrylate, the binary star copolymer of vinylformic acid and Hydroxyethyl acrylate, and vinylformic acid, one or more in the ternary star copolymer of butyl acrylate and acrylamide.
8. apply as claimed in claim 1, it is characterized in that: the number-average molecular weight of the described star-type polymer containing pigment affinity groups is 800-50000.
9. apply as claimed in claim 1, it is characterized in that: the content of the described star-type polymer containing pigment affinity groups is mass percent 0.0005 ~ 3%.
10. apply as claimed in claim 9, it is characterized in that: the content of the described star-type polymer containing pigment affinity groups is mass percent 0.001 ~ 1%.
11. apply as claimed in claim 1, it is characterized in that: described abrasive grains is one or more in silicon-dioxide, aluminium sesquioxide, the silicon-dioxide of adulterated al, the silicon-dioxide of aluminium coating, cerium dioxide, titanium dioxide and polymer abrasive grains.
12. apply as claimed in claim 1, it is characterized in that: the content of described abrasive grains is mass percent 0.1 ~ 30%.
13. apply as claimed in claim 12, it is characterized in that: the content of described abrasive grains is mass percent 1 ~ 20%.
14. apply as claimed in claim 1, it is characterized in that: the particle diameter of described abrasive grains is 20 ~ 150nm.
15. apply as claimed in claim 14, it is characterized in that: the particle diameter of described abrasive grains is 30 ~ 120nm.
16. apply as claimed in claim 1, it is characterized in that: the pH of described polishing fluid is 7 ~ 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810207470.XA CN101747842B (en) | 2008-12-19 | 2008-12-19 | Chemical-mechanical polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810207470.XA CN101747842B (en) | 2008-12-19 | 2008-12-19 | Chemical-mechanical polishing solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101747842A CN101747842A (en) | 2010-06-23 |
| CN101747842B true CN101747842B (en) | 2014-12-31 |
Family
ID=42475474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810207470.XA Active CN101747842B (en) | 2008-12-19 | 2008-12-19 | Chemical-mechanical polishing solution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101747842B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5278631B1 (en) * | 2011-09-20 | 2013-09-04 | 堺化学工業株式会社 | Composite particles for glass polishing |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| CN1644640A (en) * | 2003-12-19 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for controlled polishing of copper |
| CN1699444A (en) * | 2004-02-23 | 2005-11-23 | Cmp罗姆和哈斯电子材料控股公司 | Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers |
| CN1900146A (en) * | 2005-07-21 | 2007-01-24 | 安集微电子（上海）有限公司 | Chemical and mechanical polishing liquid |
| CN101143996A (en) * | 2006-09-15 | 2008-03-19 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101153206A (en) * | 2006-09-29 | 2008-04-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for polishing polysilicon |
| CN101168647A (en) * | 2006-10-27 | 2008-04-30 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101195729A (en) * | 2006-12-08 | 2008-06-11 | 安集微电子（上海）有限公司 | Application of non-ionic polyalcohol in producing and using self-stopping polysilicon polishing solution |
| CN101280158A (en) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing slurry for polysilicon |
-
2008
- 2008-12-19 CN CN200810207470.XA patent/CN101747842B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| TW526251B (en) * | 1999-12-08 | 2003-04-01 | Eastman Kodak Co | Aqueous slurry and method for removing silicon dioxide in preference to silicon nitride, and slurry for polishing silica and silicon nitride |
| CN1644640A (en) * | 2003-12-19 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for controlled polishing of copper |
| CN1699444A (en) * | 2004-02-23 | 2005-11-23 | Cmp罗姆和哈斯电子材料控股公司 | Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers |
| CN1900146A (en) * | 2005-07-21 | 2007-01-24 | 安集微电子（上海）有限公司 | Chemical and mechanical polishing liquid |
| CN101143996A (en) * | 2006-09-15 | 2008-03-19 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101153206A (en) * | 2006-09-29 | 2008-04-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for polishing polysilicon |
| CN101168647A (en) * | 2006-10-27 | 2008-04-30 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101195729A (en) * | 2006-12-08 | 2008-06-11 | 安集微电子（上海）有限公司 | Application of non-ionic polyalcohol in producing and using self-stopping polysilicon polishing solution |
| CN101280158A (en) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing slurry for polysilicon |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101747842A (en) | 2010-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101535431B (en) | A chemical-mechanical polishing liquid for polishing polysilicon | |
| CN101652445B (en) | Chemical mechanical polishing liquid for polycrystalline silicon | |
| JP4123685B2 (en) | Aqueous dispersion for chemical mechanical polishing | |
| TWI431080B (en) | Slurry composition for chemical mechanical polishing and polishing method | |
| KR101243423B1 (en) | Polishing agent for silicon oxide, liquid additive, and method of polishing | |
| JP3130279B2 (en) | Polishing process and slurry for planarization | |
| CN101374922B (en) | CMP slurry and method for polishing semiconductor wafer using the same | |
| US20090047786A1 (en) | CMP Abrasive Slurry for Polishing Insulation Film, Polishing Method, and Semiconductor Electronic Part Polished by the Polishing Method | |
| CN101747844B (en) | Chemically mechanical polishing solution and application thereof | |
| CN102597142B (en) | A chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles | |
| WO2006112519A1 (en) | Polishing composition | |
| WO2011079512A1 (en) | Chemical mechanical polishing liquid | |
| CN102101977B (en) | A kind of chemical mechanical polishing liquid | |
| CN101868511B (en) | A chemical-mechanical polishing liquid for polysilicon | |
| CN104093810A (en) | Polishing fluid for metal and polishing method | |
| CN101451047B (en) | Chemico-mechanical polishing liquid | |
| CN101457126B (en) | Chemico-mechanical polishing liquid | |
| CN101747842B (en) | Chemical-mechanical polishing solution | |
| CN101492592A (en) | Chemico-mechanical polishing solution | |
| CN102101978B (en) | Chemical-mechanical polishing solution | |
| CN101457127B (en) | Chemico-mechanical polishing liquid | |
| CN102245724A (en) | Chemical-mechanical polishing liquid | |
| CN102559059A (en) | Chemical-mechanical polishing liquid | |
| CN101143996A (en) | Chemical mechanical polishing fluid for polishing polycrystalline silicon | |
| CN102533120A (en) | Chemi-mechanical polishing fluid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160928 Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee after: Anji Microelectronics (Shanghai) Co., Ltd. Address before: 201203, room 5, building 3000, 613-618 East Avenue, Zhangjiang hi tech park, Shanghai, Pudong New Area Patentee before: Anji Microelectronics (Shanghai) Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee after: Anji microelectronic technology (Shanghai) Limited by Share Ltd Address before: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee before: Anji Microelectronics (Shanghai) Co., Ltd. |