CN101741316A - Gain variable broadband radio frequency low-noise amplifier - Google Patents
Gain variable broadband radio frequency low-noise amplifier Download PDFInfo
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- CN101741316A CN101741316A CN200910243095A CN200910243095A CN101741316A CN 101741316 A CN101741316 A CN 101741316A CN 200910243095 A CN200910243095 A CN 200910243095A CN 200910243095 A CN200910243095 A CN 200910243095A CN 101741316 A CN101741316 A CN 101741316A
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Abstract
The invention discloses a gain variable broadband radio frequency low-noise amplifier which belongs to the technical field of wireless communication receiver systems. The amplifier comprises an input stage (100), a variable gain unit (200), a signal synthesizing unit (300), a feedback unit (400) and a broadband output stage (500), and the variable gain unit (200) mainly comprises two MOS tubes, two resistors and two sensors; the signal synthesizing unit (300) mainly comprises three MOS tubes; and the feedback unit (400) mainly comprises a resistor and a capacitor. The invention has the advantages of reducing the power consumption of the radio frequency low-noise amplifier; saving chip area and saving chip cost; improving linearity of the low-noise amplifier; controlling the gain of the radio frequency low-noise amplifier on the premise of not affecting the broadband input matching; reducing the demand of the system on the dynamic range of a post-stage circuit and the like.
Description
Technical field
The invention belongs to wireless communication receiver systems technology field, relate to a kind of wide band radio-frequency low noise amplifier of gain-variable.
Background technology
In recent years, because the prosperity of wireless communications market, the R and D of radio frequency integrated circuit have obtained fast development.Because the continuous lifting of amount of communication data, multimode multifrequency and broadband connections become a kind of trend just gradually.The multimode multifrequency receiver needs compatible a plurality of frequencies, and frequency coverage is wide; The bandwidth of ultra-wideband communications has reached 3-10GHz especially, and these all need wideband low noise amplifier to realize the low noise of input signal is amplified.Meanwhile, the market user is also more and more harsher to the performance requirement of wireless product, and low cost, low-power consumption, small size and high-performance have proposed higher challenge to the design of transceiver.
In the broadband receiver system, wideband low noise amplifier is a very important module, it must realize input impedance matching and smooth gain in very wide frequency band range, indexs such as its gain, noise factor, the linearity directly affect the performance of receiver.So wideband low noise amplifier is one of key technology of broadband receiver system design.
Existing wideband low noise amplifier generally adopts passive filter to realize input impedance matching, and its circuit structure is gone up at ISSCC (ISSCC 2004) in 2004 and proposed.As shown in Figure 1, the broadband band-pass filter of radiofrequency signal RFin by constituting by passive component L1, C1, L2, C2 and source electrode degeneracy inductance arrowband common-source amplifier, by the numerical value of each passive component of appropriate design, can be so that this amplifier be realized impedance matching in very wide frequency band range.Input signal is converted into electric current by active device M1, and main circuit is the Cascode structure of being made up of M1 and M2, and the load of amplifier has been adopted by R
LAnd L
LLoad capacitance C with the M2 drain electrode
LThe peak value structure in parallel (Shunt-Peaking) that constitutes is passed through inductance L
LIntroduce and compensate because of capacitor C a zero point
LThe gain that causes descends.Source follower has very wide bandwidth and is approximately 1 voltage gain, and the source follower that M3 constitutes drives the outer load of sheet of 50 Ω as the output stage of amplifier.The circuit structure and the operation principle of Here it is existing wideband low noise amplifier.Adopt the wideband low noise amplifier of the gain-variable that above-mentioned Broadband Matching structure realizes, its advantage is that amplifier can reach very wide bandwidth, smooth gain and more excellent noiseproof feature, and main circuit adopts single step arrangement to realize.Shortcoming is to need a lot of passive components, these passive components are realized consuming a large amount of chip areas in sheet, and owing to the quality factor of the passive component of realizing at sheet is relatively poor, can worsen the noiseproof feature of amplifier, if adopt the sheet external component, then can increase cost.
Existing another kind of wideband low noise amplifier is to adopt feedback arrangement to realize input impedance matching.A kind ofly adopt variable gain wideband low noise amplifier that passive filter and feedback arrangement make broadband input coupling as shown in Figure 2, circuit adopts single step arrangement to realize, employing is by L1, the passive filter that C1 constitutes is expanded bandwidth, feedback resistance Rf realizes the input impedance of 50 Ω, the resonance frequency of the tuning input circuit of L2 makes it at centre frequency place resonance.C2 is an ac coupling capacitor, and M1 is the adjustable resistance that works in linear zone, and its grid meets control voltage Vcontrol, changes the resistance value of M1 by the value of regulating Vcontrol, thereby has changed the value of the total feedback resistance of circuit, and then changed gain.Its advantage is the gain variation range that can obtain broad, but is cost with relatively poor input impedance matching, because when change in gain, input impedance is also non-constant.The application for a patent for invention that on September 20th, 2006 disclosed a kind of low noise amplifier, its publication number is CN 1835390A, its content has related to the wideband low noise amplifier that adopts the gain-variable of feedback arrangement.Circuit adopts multilevel hierarchy, the first order is used for realizing impedance matching and introduces alap noise, the back what be used for realizing gain control function, its advantage is to obtain more excellent noiseproof feature and input impedance matching, shortcoming is that main amplifying circuit adopts the multilevel hierarchy cascade to realize, increased circuit complexity, power consumption is bigger.
In sum, the realization of the wide band radio-frequency low noise amplifier of gain-variable, if adopt the structure of passive filter, though single-level circuit can realize, simple in structure, adopted a large amount of passive components to increase cost or area; If adopt feedback arrangement, use the single-level circuit can the severe exacerbation input impedance matching when change in gain, though and use multi-level pmultistage circuit to guarantee circuit performance, increased power consumption and implementation complexity.
Summary of the invention
The objective of the invention is to propose a kind of wide band radio-frequency low noise amplifier of gain-variable, on the basis of adopting feedback arrangement, increased a kind of signal synthesis unit, have the power consumption that can reduce radio frequency low-noise amplifier for overcoming the weak point of prior art; Save chip area; Improve the linearity of low noise amplifier; Under the prerequisite that does not influence broadband input coupling, can control the gain of radio frequency low-noise amplifier; Reduced the plurality of advantages such as requirement of system to the dynamic range of late-class circuit.
The wide band radio-frequency low noise amplifier of a kind of gain-variable that the present invention proposes comprises input stage circuit, it is characterized in that, also comprises the variable gain unit that links to each other with this input stage circuit, signal synthesis unit, feedback unit and broadband output stage; Described input stage circuit is mainly by metal-oxide-semiconductor M1 and inductance L 1, and L2 forms; Described variable gain unit is mainly by metal-oxide-semiconductor M2, M3, and inductance L 3, L4, resistance R 2, R3 and capacitor C 3, C4 forms: said signal synthesis unit is mainly by metal-oxide-semiconductor M4, and M5 and M6 form; Said feedback unit mainly is made up of capacitor C 1 and resistance R 1.Its annexation is: radiofrequency signal RFin is input to the grid of M1 by inductance L 2, and the source electrode of M1 is by inductance L 1 ground connection; The drain electrode of M1 connects the source electrode of M2 and M3, and the grid of M2 and M3 is connected control voltage Vc and bias voltage Vb respectively, and the drain electrode of M2 and M3 is on the one hand respectively by R2 and L3, the series network of R3 and L4 is connected to VDD, respectively by ac coupling capacitor C3, C4 is connected to M5, the grid of M6 on the other hand; M5, the drain electrode of M6 all is connected to VDD, and source electrode all connects drain electrode and the resistance R 1 of M4, and the other end of resistance R 1 is connected to the grid of M1 by capacitor C 1, forms feedback loop.The grid of M4 connects bias voltage, source ground; Described broadband output unit is by capacitor C 2, metal-oxide-semiconductor M7, and M8 forms, the drain electrode of M3 is connected to the grid of metal-oxide-semiconductor M8 by ac coupling capacitor C3, C2, and the drain electrode of M8 meets VDD, and source electrode connects the drain electrode of M7, the source ground of M7, grid connects bias voltage, as the current source of source follower.M7, M8 forms a broadband output stage, and radiofrequency signal is from the source electrode output of M8.
The design of this improved wide band radio-frequency low noise amplifier of the present invention is compared with traditional design has following tangible advantage:
(1) adopts feedback arrangement to realize broadband input coupling, realize that with adopting the passive filter technology technology of Broadband Matching compares, saved chip area, reduced cost, and improved the linearity of low noise amplifier.
(2) the present invention the most important thing is, adopted a kind of signal synthesis unit circuit, will export the two paths of signals addition, the circuit open-loop gain is fixed, thereby make feedback circuit constant, when obtaining the gain control range of broad and whether input impedance changes at the Miller effect of input.
(3) the present invention is owing to adopted a kind of signal synthesis unit circuit, make and adopt the wideband low noise amplifier single-level circuit of feedback arrangement just can realize the function of gain-variable and keep good input impedance matching performance that this greatly reduces power consumption, area and the implementation complexity of circuit.
(4) the present invention can obtain the continuous change in gain and the gain variation range of broad by regulating control voltage Vc.
(5) feedback resistance R1 of the present invention had both made noise of the present invention less in 500-1K Ω scope, and bandwidth is improved.
Description of drawings
Fig. 1 is existing wideband low noise amplifier topological structure schematic diagram;
Fig. 2 is the wideband low noise amplifier topological structure schematic diagram of existing gain-variable;
Fig. 3 is the wideband low noise amplifier topological structure schematic diagram of gain-variable of the present invention;
Fig. 4 is the another kind of example structure schematic diagram of the wideband low noise amplifier of gain-variable of the present invention.
Embodiment
The wide band radio-frequency low noise amplifier of the gain-variable that the present invention proposes reaches embodiment in conjunction with the accompanying drawings and is described in detail as follows.
The radio frequency amplifier that the present invention proposes, comprise four parts: input stage 100 (Input Stage), variable gain unit 200 (VGA Cell), signal synthesis unit 300 (Signal Summing Cell), feedback unit 400 (Feedback Cell) and broadband output stage 500 (Wideband Output Buffer).The particular circuit configurations and the annexation of each several part are described as follows.
The operation principle of variable gain unit is: after M1 was converted into electric current with input signal, radiofrequency signal flowed to the differential pair that M2 and M3 form, M2, and M3 is measure-alike.Wherein M3 place branch road is that signal amplifies branch road, and its grid meets fixed bias Vb; M2 place branch road is the signal branch road of releasing, and its grid meets control voltage Vc.Regulate control voltage Vc, and then changed the mutual conductance of M2, make a part of signal release from the M2 branch road, another part signal passes through the amplification branch road at M3 place, and obtains different gains in the drain electrode of M3.This method can obtain continuous change in gain and the gain variation range of 20dB.R2, L3 and R3, the series network that L4 forms, inductance value all equates with resistance value.This two series networks one side and M2, the parasitic capacitance of M3 drain terminal forms the laod network of amplifier, expands the bandwidth of amplifier; On the other hand, make and amplify branch road and release the load matched of branch road, thereby make signal synthesis unit can access constant circuit gain.
The operation principle of signal synthesis unit is: the output of variable gain unit differential pair is directly connected to M5, and the grid of M6 is M5, and M6 provides dc point, has reduced the design of biasing circuit.M5, M6 is measure-alike, and two paths of signals is by M5, and M6 is converted into current signal, and its direction is identical, and realizes the current signal addition in the drain electrode of M4.M4 is as tail current source, for element circuit provides bias current.Therefore, its voltage gain of the signal that the drain electrode of M4 obtains is half of two paths of signals voltage gain sum in the variable gain unit, is invariable.No matter how the gain of RFout output changes, and the gain of M4 drain signal is constant.The voltage gain that is the M4 drain electrode is:
The operation principle of feedback unit is: the signal of M4 drain electrode feeds back to the grid of M1 by feedback resistance R1 and ac coupling capacitor C1.Because the introducing of signal synthesis unit, this moment, the resistance of feedback resistance was:
Because the effect of signal synthesis unit, the open-loop gain of circuit is constant, and according to the principle of the Miller effect, the resistance that is equivalent to a constant resistance is parallel to ground from the grid of M1, and the resistance of this equivalent resistance is:
Above-mentioned g
M1, g
M5, g
M6Be respectively the mutual conductance of M1, M5, M6;
This equivalent resistance has reduced the quality factor of input circuit, has expanded the bandwidth of input matching network, thereby has realized Broadband Matching.Therefore when amplifier gain changed, input impedance did not change, and makes amplifier keep good input matching performance.
The circuit structure of broadband output stage is identical with traditional wideband low noise amplifier with operation principle.
Example structure of the wide band radio-frequency low noise amplifier of gain-variable of the present invention as shown in Figure 3, the parameter list of each components and parts is as follows among the figure:
Its basic structure and basic principle no longer repeat as previously mentioned.Here some key technology details that should be noted that in the main just design are further described.
On circuit design, can design the arrowband input matching circuit earlier, making the input impedance of input stage is 50 Ω at the centre frequency place, by the value of amplifier open-loop gain, designs the open loop radio frequency amplifier that meets the demands.The selection of feedback resistance R1 is extremely important, and the too little then circuit noise of R1 is bigger, and R1 too greatly then input stage bandwidth is less, determines the R1 resistance value of optimum by R1 being carried out parameter scanning and a large amount of tests, and the optimal resistance of R1 is 500-1K Ω.Because the introducing of signal synthesis unit, actual feedback resistance value as shown in Equation (2) should be with M5 during design, and the influence of M6 is taken into account.After designing open loop circuit and signal synthesis unit, can obtain input by formula (3) and get equivalent resistance, this moment, the bandwidth of input stage was widened.In addition, when carrying out layout design, to M2, M3 and M5, differential pair that M6 formed and resistance R 2, R3, inductance L 3, L4 will carry out the domain coupling, to guarantee superior circuit performance.Simulation result shows, the wide band radio-frequency low noise amplifier of gain-variable of the present invention, and maximum bandwidth can reach 8GHz, and gain control range can reach 20dB, and the return loss of input still can guarantee less than-10dB during change in gain.
Fig. 4 is an another kind of implementation of the present invention, with reference to Fig. 3, only is that M5, M6 have become the PMOS pipe accordingly with the pipe of the NMOS in the signal synthesis unit 300 M4 among Fig. 4.M5, the grid of M6 connects M2 respectively, the drain electrode of M3, grounded drain, source electrode connect the drain electrode of M4, and M4 connects fixed bias voltage as the current source grid, source ground.Use this implementation, can reach above-mentioned effect equally.
The content that is not described in detail in the specification of the present invention belongs to this area professional and technical personnel's known technology.Though described embodiments of the present invention in conjunction with the accompanying drawings, those of ordinary skills can make various distortion or modification within the scope of the appended claims.
Claims (5)
1. the wide band radio-frequency low noise amplifier of a gain-variable, it is characterized in that: comprise input stage circuit (100), the variable gain unit (200) that links to each other with this input stage circuit, signal synthesis unit (300), feedback unit (400) and broadband output stage (500); Described input stage circuit (100) is by metal-oxide-semiconductor M1 and inductance L 1, and L2 forms; Described variable gain unit (200) is by metal-oxide-semiconductor M2, M3, and inductance L 3, L4, resistance R 2, R3 and capacitor C 3, C4 forms: described signal synthesis unit (300) is by metal-oxide-semiconductor M4, and M5 and M6 form; Described feedback unit (400) is made up of capacitor C 1 and resistance R 1; Described broadband output stage (500) is by capacitor C 2, metal-oxide-semiconductor M7, and M8 forms; Radiofrequency signal RFin is input to the grid of M1 by inductance L 2, and the source electrode of M1 is by inductance L 1 ground connection; The drain electrode of M1 connects the source electrode of M2 and M3, and the grid of M2 and M3 is connected control voltage Vc and bias voltage Vb respectively, and the drain electrode of M2 and M3 is on the one hand respectively by R2 and L3, the series network of R3 and L4 is connected to VDD, respectively by ac coupling capacitor C4, C3 is connected to M5, the grid of M6 on the other hand; M5, the drain electrode of M6 all is connected to VDD, and source electrode all connects drain electrode and the resistance R 1 of M4, and the other end of resistance R 1 is connected to the grid of M1 by capacitor C 1, forms feedback loop, and the grid of M4 connects bias voltage, source ground; The drain electrode of M3 is connected to the grid of metal-oxide-semiconductor M8 by ac coupling capacitor C3, C2, and the drain electrode of M8 meets VDD, and source electrode connects the drain electrode of M7, the source ground of M7, grid connects bias voltage, as the current source of source follower, M7, M8 forms a broadband output stage, and radiofrequency signal is from the source electrode output of M8.
2. the wide band radio-frequency low noise amplifier of gain-variable according to claim 1 is characterized in that: in the said signal synthesis unit (400), transistor M4, M5, M6 also can be the PMOS pipes.
3. the wide band radio-frequency low noise amplifier of gain-variable according to claim 1, it is characterized in that: the value of described R1 is 500-1K Ω.
4. the wide band radio-frequency low noise amplifier of gain-variable according to claim 1 is characterized in that: regulate described control voltage Vc and can obtain different gains in the drain electrode of M3.
5. the wide band radio-frequency low noise amplifier of gain-variable according to claim 1, it is characterized in that: the maximum bandwidth of the wide band radio-frequency low noise amplifier of described gain-variable reaches 8G Hz, and gain control range reaches 20dB.
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| CN103066924A (en) * | 2011-10-20 | 2013-04-24 | 苏州微体电子科技有限公司 | Ultra-wide band and low noise amplifier |
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| CN112468099A (en) * | 2020-11-20 | 2021-03-09 | 北京昂瑞微电子技术股份有限公司 | Radio frequency front end and low noise amplifier thereof |
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| CN114070337B (en) * | 2021-10-27 | 2023-03-14 | 中国电子科技集团公司第二十九研究所 | Low static noise solid state transmitter and method for reducing static noise |
| CN115378384A (en) * | 2022-07-28 | 2022-11-22 | 北京时代民芯科技有限公司 | Variable gain amplifier with three-stack structure |
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