CN1141787C - Variable-gain single-ended-to-difference radio-frequency low-noise amplifier - Google Patents
Variable-gain single-ended-to-difference radio-frequency low-noise amplifier Download PDFInfo
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Abstract
The present invention belongs to the technical field of a radio communication receiver system, and relates to a single-ended-to-differential radio frequency (RF) amplifier with variable gain and low noise, which comprises a single-ended input main amplifier circuit, a single-ended-to-differential output buffer and a variable gain unit, wherein the single-ended-to-differential output buffer and the variable gain unit are respectively connected with the input end and the output end of the main amplifier circuit. The main amplifier circuit is mainly composed of two MOS tubes and three electrical inductors; the single-ended-to-differential output buffer is mainly composed of three MOS tubes, two electrical inductors and a capacitor; the variable gain unit is mainly composed of two MOS tubes, two resistors, a capacitor and a diode. The present invention has the advantages that the power consumption of the RF amplifier with the low noise can be reduced, and the noise of the RF amplifier with the low noise is reduced; system noise caused by the introduction of balun is eliminated, and the noise performance of the system is improved; on the premise that the noise performance of the circuit is not influenced, the gain of the RF amplifier can be controlled, the requirement of the system for the dynamic range of a post-stage circuit is reduced, etc.
Description
Technical field
The invention belongs to wireless communication receiver systems technology field, particularly be used for the radio frequency low-noise amplifier structural design of wireless communication receiver system front end.
Background technology
Over past ten years, the R and D of radio frequency integrated circuit (RFIC) have obtained swift and violent development, and this mainly should give the credit to the prosperity of wireless communications market.These wireless applications comprise beep-pager, cordless telephone, radio frequency authentication (RFID), analog-and digital-cellular mobile telephone and global positioning system (GPS) etc.Simultaneously along with the Internet is popularized mondial with surprising speed, the wireless communication system of some emerging short distances, high-speed transfer---wireless lan (wlan) also began to be able to develop rapidly over the past two years, mainly comprised IEEE802.11 series, HyperLAN, Bluetooth, HomeRF etc.The development of these wireless communication systems has formed a RFIC market that increases fast.Why radio circuit is subjected to mondial concern and research, is because it is the main bottleneck of whole wireless transceiver system design.In the element of radio frequency transceiver, the technical performance of RFIC requires to have constituted the ultimate challenge of RFIC.And meanwhile, the market user is again very harsh to the performance requirement of wireless product, i.e. low cost, low-power consumption, small size, high-performance etc., with original use bulky, cost dearly, power consumption again extremely the discrete component of waste realize that the method for transceiver compares, this is a very arduous challenge.
In the wireless receiver system, radio frequency low-noise amplifier is a very crucial circuit module, and its noise figure has directly determined the lower limit of the noise figure of whole system, and the sensitivity of system is produced decisive influence.Therefore, the design of radio frequency low-noise amplifier is one of key technology of RFIC design always.
Traditional CMOS low noise amplifier generally all adopts the structure of differential-input differential output.As shown in Figure 1, the balanced to unbalanced transformer B1 (balun) of radio-frequency input signals RF_IN process single-ended-to-difference afterwards, be input to the grid of metal-oxide-semiconductor M1 and M2 respectively by inductance L 3 and L4, and the source electrode of metal-oxide-semiconductor M1 and M2 meets inductance L 1 and L2 respectively, their drain electrode connects the source electrode of metal-oxide-semiconductor M3 and M4 respectively, constitute a difference cascode (cascode) circuit structure, and the grid of metal-oxide-semiconductor M3 and M4 is connected on the power supply, their drain electrode is also received on the power supply by inductance L 5 and L6 respectively.The other end of inductance L 1 and L2 is received on the constant-current source Iss.Signal after the amplification is exported from the drain electrode of M3 and M4 respectively.In this structure, M1～M4 is the active device that is used to amplify, inductance L 1 and L2 are respectively applied for and produce a real part resistance, make 50 ohms impedance match of two inputs of differential signal and antenna, L3 and L4 be respectively applied for the resonance frequency of the input circuit of low noise amplifier be tuned on the carrier frequency of input radio frequency signal, L5 and L6 are respectively applied for the tuning and impedance matching of the output loop of low noise amplifier, and current source Iss provides direct current biasing for the whole amplifier circuit.The circuit structure and the operation principle of Here it is traditional difference cascode amplifier.
The advantage of this amplifier is because whole amplifier has been used the fully differential structure, and is relatively good to the inhibition degree of common-mode noise.But, the fully differential structure has also been brought some drawbacks that self can't overcome: at first, owing to adopted the fully differential structure, the required dc bias current of circuit is the twice of non-difference channel, thereby make that the power consumption of circuit also is the twice of non-difference channel, it is contrary that the low power dissipation design of this and portable electric appts requires; The second, owing to adopted the fully differential structure, make the active device of circuit increase, the noise of circuit also can increase thereupon, so the noiseproof feature of circuit descends; The 3rd, also be most important, because the radiofrequency signal from antenna is a single-ended signal, therefore, radiofrequency signal before earlier will be through the balanced to unbalanced transformer B1 (balun) of a single-ended-to-difference through low noise amplifier, to be converted to differential signal from the single-ended signal of antenna and pass through low noise amplifier again, and there is certain loss in this balanced to unbalanced transformer B1 for the radiofrequency signal of importing, be generally about 1dB, because before this loss occurs in the input of low noise amplifier, therefore, the noise figure of the loss meaning person system of 1dB so the 1dB that rises, and the noise figure of low noise amplifier generally requires less than 3dB, therefore, if there is the loss of balanced to unbalanced transformer B1, the noise figure that just requires low noise amplifier is less than 2dB, and this requirement is too difficult for the low noise amplifier that adopts CMOS technology.
In addition, if traditional low noise amplifier wants to add the function of gain-variable, generally be to take following two kinds of approach: one is by adjusting metal-oxide-semiconductor (as M1, M2) bias voltage, change the mutual conductance of metal-oxide-semiconductor, thereby the change Amplifier Gain, but the bias set circuti introduced of this method has a significant impact for the coupling of input impedance, and the adjustable range of this method is very little; Another is the gain that comes resonance-amplifier by the size of regulating output loading, but the output loading regulating circuit that this method is introduced also can produce very big influence for the output impedance coupling of signal.Therefore, these two kinds of methods all can make circuit because of the problem of input and output impedance matching when obtaining variable gain, and the noiseproof feature of circuit descends too many.
Summary of the invention
The objective of the invention is to propose a kind of radio frequency low-noise amplifier of single-ended-to-difference of variable-gain, have the power consumption that can reduce radio frequency low-noise amplifier for overcoming the weak point of prior art; Improve the noise of radio frequency low-noise amplifier; Eliminate the system noise that balanced to unbalanced transformer B1 introduces, improve the system noise performance; Under the prerequisite that does not influence the circuit noise performance, the gain size of may command radio frequency amplifier has reduced the plurality of advantages such as requirement of system to the dynamic range of late-class circuit.
The radio frequency low-noise amplifier of the single-ended-to-difference of a kind of variable-gain that the present invention proposes, the main amplifier circuit that comprises single-ended input, it is characterized in that, also comprise respectively output buffer and variable gain unit with the output of this main amplifier circuit, single-ended-to-difference that input links to each other; Said main amplifier circuit is mainly by metal-oxide-semiconductor M1 and M2, and inductance L 1, L2 and L3 form; The output buffer of said single-ended-to-difference is mainly by metal-oxide-semiconductor M3, M4 and M5, inductance L 4 and L5, and capacitor C 1 is formed; Said variable gain unit is mainly by metal-oxide-semiconductor M6 and M7, resistance R 3 and R4, and capacitor C 2 and diode D1 form; Its annexation is: radiofrequency signal RF-IN is input to the grid of M1 by inductance L 2, and the source electrode of M1 is by inductance L 1 ground connection, and the source electrode of M2 is received in the drain electrode of M1, and the grid of M2 is received on the power vd D1, and its drain electrode is also received on the power vd D1 by inductance L 3; Signal after main amplifier circuit amplifies outputs to the grid of M3 from the drain electrode of M2; The source electrode of M3 is on the one hand by capacitor C 1 ground connection, receive in the drain electrode of M5 by inductance L 5 again simultaneously, the grid of M5 and the source electrode of M4 are then directly received in the drain electrode of M3, the drain electrode of M4 is received on the power vd D2 by inductance L 4, the grid of M4 is then directly received on the power vd D2, the direct ground connection of the source electrode of M5, drain electrode is then received on the source electrode of M3 by inductance L 5; Radiofrequency signal is received the source electrode of M7 and the positive pole of D1 by capacitor C 2, the minus earth of D1, and the drain electrode of M7 meets power vd D3, grid is received the drain electrode of M6, the drain electrode of M6 is received on the power vd D3 by resistance R 3, and its source electrode is then by resistance R 4 ground connection, and the grid of M6 is received on the control voltage Vc.
The design of this improved CMOS radio frequency low-noise amplifier of the present invention is compared with the traditional design scheme has following tangible advantage:
1), makes that the overall power of circuit is approximate and reduced half because the power consumption of main amplifying circuit is maximum, and therefore, main amplifying circuit adopts single-ended input circuit structure;
2) the main of circuit amplified the active device decreased number on the path, so the noise of circuit reduces
3) most important, owing to adopted the output buffer of single-ended-to-difference, the system that makes need not at low noise amplifier front interpolation balanced to unbalanced transformer B1, thereby eliminated the insertion loss that balanced to unbalanced transformer B1 introduces, make system noise reduce 1dB at least, this is an important improvement for the low noise amplifier that the noise figure target is 2～3dB;
4) the very important aspect of another one has adopted a kind of variable-gain amplifier cell design of new input leakage type, makes that under the situation that the circuit noise performance is not lost substantially by selecting suitable M7, the D1 size obtains bigger gain control range.
Description of drawings
Fig. 1 is traditional CMOS radio frequency low-noise amplifier topological structure schematic diagram.
Fig. 2 is a CMOS radio frequency low-noise amplifier topological structure schematic diagram of the present invention.
Fig. 3 is a CMOS radio frequency low-noise amplifier design implementation example structural representation of the present invention.
Embodiment
The radio frequency low-noise amplifier of the single-ended-to-difference of the variable-gain that the present invention proposes reaches embodiment in conjunction with the accompanying drawings and is described in detail as follows:
The radio frequency amplifier that the present invention proposes comprises three parts: main amplifier circuit (Main Amplifier Stage), shown in frame of broken lines II among Fig. 2; The output buffer of single-ended-to-difference (Single-to-Differential Output Buffer) is shown in frame of broken lines III among Fig. 2; Variable gain unit (VGA Cell) is shown in each frame of broken lines I among Fig. 2; The particular circuit configurations and the annexation of each several part are described in detail as follows:
Main amplifier circuit is mainly by metal-oxide-semiconductor M1 and M2, inductance L 1, L2 and L3 form, its annexation is: radiofrequency signal RF-IN is input to the grid of M1 by inductance L 2, the source electrode of M1 is by inductance L 1 ground connection, the source electrode of M2 is received in the drain electrode of M1, the grid of M2 is received on the power vd D1, and its drain electrode is also received on the power vd D1 by inductance L 3.
The output buffer of single-ended-to-difference is mainly by metal-oxide-semiconductor M3, M4 and M5, inductance L 4 and L5, and capacitor C 1 forms, its annexation is: the signal after main amplifier circuit amplifies outputs to the grid of M3 from the drain electrode of M2.The source electrode of M3 is received in the drain electrode of M5 by inductance L 5 again on the one hand by capacitor C 1 ground connection simultaneously, and the grid of M5 and the source electrode of M4 are then directly received in the drain electrode of M3.The drain electrode of M4 is received on the power vd D2 by inductance L 4, and the grid of M4 is then directly received on the power vd D2.The direct ground connection of the source electrode of M5, drain electrode is then received on the source electrode of M3 by inductance L 5.
The variable gain unit is mainly by metal-oxide-semiconductor M6 and M7, resistance R 3 and R4, and capacitor C 2 and diode D1 form, its annexation is: radiofrequency signal is received the source electrode of M7 and the positive pole of D1 by capacitor C 2, the minus earth of D1, the drain electrode of M7 meets power vd D3, and grid is received the drain electrode of M6.The drain electrode of M6 is received on the power vd D3 by resistance R 3, and its source electrode is then by resistance R 4 ground connection, and the grid of M6 is received on the control voltage Vc.
The circuit structure of main amplifier and operation principle and traditional low noise amplifier structure and operation principle are very close, L1 wherein is used to produce a real part resistance, make input to realize impedance matching with 50 ohm of antenna, L2 is used for the resonance frequency of tuning input circuit, make it consistent with the signal frequency of RF_IN, L3 is used for producing resonance with the input capacitance of M3, and what just here adopt is the circuit structure of single-ended input rather than the circuit structure of difference input.
The operation principle of the output buffer of single-ended-to-difference is: after will amplifying from the radiofrequency signal of RF_IN, export to the grid of the M3 pipe of single-ended-to-difference buffer from the drain electrode of M2 pipe, the source electrode of M3 has exchanged ground connection by C1, signal passes through after the isolation buffer of M3, distinguishes the source electrode of feed-in M4 and the grid of M5 by the drain electrode of M3.Because common gate structure and common source configuration that M4 and M5 adopt respectively, if do not consider second-order effect, the long modulation of bulk effect and ditch, the gain of two branch circuits should be an equal and opposite in direction in theory, phase place is opposite, that is to say, and is consistent from the amplitude of the two paths of signals of the drain electrode of M4 and M5 output, but phase phasic difference 180 degree, this has just realized the conversion of single-ended signal to differential signal.
Another part is the variable gain unit.Its operation principle is: the method for the input RF_IN parallel connection that this element circuit has been taked in radiofrequency signal.C2 is an ac coupling capacitor.If control voltage Vc is a high level, then M6 conducting, the current potential that X is ordered is dragged down, therefore M7 closes, therefore diode D1 also turn-offs, so the path that leads to VGACell from the RF_IN this point is turned off, it is a high resistance path, and a high resistance path is connected in parallel on this end of RF_IN, to not influence of input impedance, at this moment, circuit is with its maximum gain and the work of minimal noise index, and the noiseproof feature of circuit can not descend because of matching of input impedance.If the radiofrequency signal by the RF_IN input is excessive, then become low level by controlling voltage Vc, M6 closes, X point current potential is drawn high, M7 and D1 conducting, the impedance of leading to the path of VGA Cell from the RF_IN this point reduces, and at this moment the part of radio-frequency input signals can be leaked away by this path, therefore the gain of circuit can reduce, and the excursion and the D1 of gain, the size of M7 is relevant, and excursion can be very big, also can be very little, very flexible.
An example structure of CMOS radio frequency low-noise amplifier of the present invention as shown in Figure 3, the parameter list of each components and parts is as follows among the figure, wherein jX is about about 1pF:
| MOS device size (um) (W, L) | Inductance value (nH) | Resistance value (Ω) | Capacitance (pF) | ||||||||||||||
| ?M1 | ?M2 | ?M3 | ?M4 | ?M5 | ?M6 | ?M7 | ?L1 | ?L2 | ?L3 | ?L4 | ?L5 | ?R1 | ?R2 | ?R3 | ?R4 | ?C1 | ?C2 |
| ?60 | ?60 | ?40 | ?40 | ?40 | ?60 | ?200 | ?0.9 | ?4.5 | ?4.5 | ?2 | ?2 | ?50～100 | ?60 | ?1K | ?50 | ?10 | ?10 |
| ?0.2 | ?0.2 | ?0.2 | ?0.2 | ?0.2 | ?0.2 | ?0.2 | |||||||||||
Its basic structure and basic functional principle no longer repeat as previously mentioned.Here mainly be further described with regard to some key technology details that should be noted that in the specific design.
On circuit design, amplitude between the two-way output signal of single-ended-to-difference output buffer and phase matched are the technical parameters of a key.General, the difference of the amplitude of the two paths of signals of used balanced to unbalanced transformer B1 is no more than 5% in traditional low noise amplifier design, and the difference of phase place is within ± 5 °.The front is mentioned, and the gain range of the two paths of signals of single-ended-to-difference output buffer equates that phase place is ideal situation on the contrary, and actual conditions are that certain deviation is arranged.For the technical indicator that makes it to reach same with balanced to unbalanced transformer B1, the output buffer of present embodiment can be at M4, the drain electrode of M5 has added a resistance R 1 and R2 respectively, wherein R1 is an adjustable resistor, be used to adjust the amplitude difference of two paths of signals, simultaneously, the compensating reactance jX that can connect between the drain electrode of M4 and output is used to compensate the phase difference of two paths of signals.Through above-mentioned compensation and adjusting, make the amplitude difference of two paths of signals can be controlled in 1%, phase difference can be controlled at ± 2 ° within, satisfied the designing requirement of system fully.
Claims (2)
1, a kind of radio frequency low-noise amplifier of single-ended-to-difference of variable-gain, the main amplifier circuit that comprises single-ended input, it is characterized in that, also comprise respectively output buffer and variable gain unit with the output of this main amplifier circuit, single-ended-to-difference that input links to each other; Said main amplifier circuit mainly and (M2) by metal-oxide-semiconductor (M1), inductance (L1), (L2) and (L3) form; The output buffer of said single-ended-to-difference mainly and (M5) by metal-oxide-semiconductor (M3), (M4), inductance (L4) and (L5), and electric capacity (C1) is formed; Said variable gain unit mainly and (M7) by metal-oxide-semiconductor (M6), resistance (R3) and (R4), electric capacity (C2) and diode (D1) are formed; Its annexation is: radiofrequency signal RF-IN is input to the grid of metal-oxide-semiconductor (M1) by inductance (L2), the source electrode of metal-oxide-semiconductor (M1) is by inductance (L1) ground connection, the source electrode of metal-oxide-semiconductor (M2) is received in the drain electrode of metal-oxide-semiconductor (M1), the grid of metal-oxide-semiconductor (M2) is received on the power vd D1, and its drain electrode is also received on the power vd D1 by inductance (L3); Signal after main amplifier circuit amplifies outputs to the grid of metal-oxide-semiconductor (M3) from the drain electrode of metal-oxide-semiconductor (M2); The source electrode of metal-oxide-semiconductor (M3) is on the one hand by electric capacity (C1) ground connection, receive in the drain electrode of metal-oxide-semiconductor (M5) by inductance (L5) again simultaneously, the grid of metal-oxide-semiconductor (M5) and the source electrode of metal-oxide-semiconductor (M4) are then directly received in the drain electrode of metal-oxide-semiconductor (M3), the drain electrode of metal-oxide-semiconductor (M4) is received on the power vd D2 by inductance (L4), the grid of metal-oxide-semiconductor (M4) is then directly received on the power vd D2, the direct ground connection of source electrode of metal-oxide-semiconductor (M5), drain electrode is then received on the source electrode of metal-oxide-semiconductor (M3) by inductance (L5); Radiofrequency signal is received the source electrode of metal-oxide-semiconductor (M7) and the positive pole of diode (D1) by electric capacity (C2), the minus earth of diode (D1), the drain electrode of metal-oxide-semiconductor (M7) meets power vd D3, grid is received the drain electrode of metal-oxide-semiconductor (M6), the drain electrode of metal-oxide-semiconductor (M6) is received on the power vd D3 by resistance (R3), its source electrode is then by resistance (R4) ground connection, and the grid of metal-oxide-semiconductor (M6) is received on the control voltage Vc.
2, the radio frequency low-noise amplifier of the single-ended-to-difference of variable-gain as claimed in claim 1, it is characterized in that, at said metal-oxide-semiconductor (M4), (M5) drain electrode is added with a resistance (R1) and (R2) respectively, wherein resistance (R1) is adjustable resistor, the compensating reactance (jX) of having connected between the drain electrode of this metal-oxide-semiconductor (M4) and output.
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| CNB021236283A CN1141787C (en) | 2002-07-05 | 2002-07-05 | Variable-gain single-ended-to-difference radio-frequency low-noise amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8494476B2 (en) | 2005-11-01 | 2013-07-23 | Diodes Incorporated | Monolithic LNA support IC |
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| WO2005067139A1 (en) * | 2004-01-05 | 2005-07-21 | Nec Corporation | Amplifier |
| WO2006117599A2 (en) * | 2004-11-26 | 2006-11-09 | Koninklijke Philips Electronics N.V. | Single - ended to differential transformer circuit |
| CN100461620C (en) * | 2005-12-28 | 2009-02-11 | 华东师范大学 | Differential superimposed RF CMOS low noise amplifier |
| US8324973B2 (en) * | 2009-12-08 | 2012-12-04 | Black Sand Technologies, Inc. | Low output impedance RF amplifier |
| CN102340294B (en) * | 2010-07-21 | 2014-09-10 | 中国科学院微电子研究所 | Fourth-order active LC radio frequency band pass filter |
| CN101924524B (en) * | 2010-08-25 | 2012-07-04 | 复旦大学 | Differential complementary metal-oxide-semiconductor (CMOS) multi-mode low-noise amplifier with on-chip active Balun |
| CN102176657B (en) * | 2011-03-09 | 2013-04-24 | 东南大学 | Positive-feedback-broadband LNA (low noise amplifier) for millimeter wave frequency range |
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| TWI623141B (en) * | 2012-07-07 | 2018-05-01 | 西凱渥資訊處理科技公司 | Circuits, devices, methods and combinations related to silicon-on-insulator based radio-frequency switches |
| CN103095222B (en) * | 2012-12-11 | 2015-04-22 | 中国科学技术大学 | Active Balun with mismatch compensation technology |
| CN104935287B (en) * | 2015-06-26 | 2018-01-30 | 英特尔公司 | Radio frequency receiver and its inductive single ended input difference output low-noise amplifier |
| US9584073B1 (en) * | 2015-10-07 | 2017-02-28 | GM Global Technology Operations LLC | Internally matched active single-to-differential RF converter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8494476B2 (en) | 2005-11-01 | 2013-07-23 | Diodes Incorporated | Monolithic LNA support IC |
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