CN101738847B - Method of manufacturing photomask and pattren transfer method using the smae - Google Patents
Method of manufacturing photomask and pattren transfer method using the smae Download PDFInfo
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- CN101738847B CN101738847B CN2009102218842A CN200910221884A CN101738847B CN 101738847 B CN101738847 B CN 101738847B CN 2009102218842 A CN2009102218842 A CN 2009102218842A CN 200910221884 A CN200910221884 A CN 200910221884A CN 101738847 B CN101738847 B CN 101738847B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Microelectronics & Electronic Packaging (AREA)
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- Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract
The present invention relates to a photomask. The photomask is formed on a main surface of a transparent substrate and a pattern is formed thereon thereby forming a photomask pattern. Then, Cr iron reduction processing is performed for the Cr included in the photomask pattern. Therefore the Cr irons which are the main course of growing foreign matter generation can be reduced. The generation of growing foreign matter can be restrained.
Description
Technical field
The present invention relates in the manufacturing approach of making LSI, liquid crystal indicator (Liquid Crystal Display: below the be called LCD) photomask of use when waiting and use the pattern transfer-printing method of this photomask.
Background technology
Thin-film transistor LCD device (Thin Film Transistor Liquid CrystalDisplay: below be called TFT-LCD; Compare with CRT (cathode-ray tube (CRT)); Process advantage slim and that power consumption is low easily because of it, become commercialized, and maximize by propelling fast.TFT-LCD has following general arrangement, promptly in the presence of liquid crystal phase, makes structure for the TFT substrate that in each pixel with rectangular arrangement, is arranged with TFT with arrange the color filter that red, green and blue pattern of pixels obtains accordingly with each pixel and overlap.
In making the process of TFT-LCD, semiconductor device such as LSI is the same with making, and adopts the photo-mask process based on the projection exposure technology mostly.The photomask that when carrying out this projection exposure, uses as mask; Be to prepare on transparency carrier, to form the film of light-proofness and the photomask blank that obtains; Form via pattern then, and formation comprises the photomask that the exposure of transmittance section and light shielding part obtains with pattern transferring to this film.In addition,, make the film of a part of transmission of irradiates light, semi light transmitting part also is set except above-mentioned transmittance section, the light shielding part as above-mentioned light-proofness film.
Pattern formation face at photomask is equipped with epidermis (pellicle) usually.This be because, when having foreign matter in the pattern formation face of this photomask, for example, in photo-mask process, the shape of this foreign matter will be transferred on the transfer printing body, can have influence on the pattern form that goes for, and becomes the reason that forms unacceptable product.For the foreign matter on the pattern formation face that reduces this photomask, on the pattern formation face of photomask, epidermis is installed.
On the other hand, use field of photomasks, when the use of photomask reaches certain hour, on the pattern formation face of photomask, be created in non-existent foreign matter when the epidermis film is installed sometimes in the semiconductor device manufacturing.
To this at the lip-deep growth property foreign matter of photomask; Open in the 2008-165104 communique (patent documentation 1) the spy and to have put down in writing following method; Promptly; The inspection method that the growth property foreign matter of middle mask (reticle) is checked, the reticle mask management method of growth property production of foreign matters being predicted according to the residual contamination material of reticle mask, surrounding material, ultraviolet exposure amount etc. in the environment for use.
In addition, open the spy and to have put down in writing the materials such as ammonia that form the reason material of precipitate in will be as reticle mask in the 2000-352812 communique (patent documentation 2) and remove, thus foreign matter is separated out the method for controlling from middle mask space.Particularly, put down in writing the factor of the separating out material that exists in the intraepidermal gas in order to be captured in, his-and-hers watches intracutaneous portion gives the layer of phosphoric acid, activated charcoal etc.
According to the invention of record in the patent documentation 1, growth property production of foreign matters is checked or predicted judge whether reticle mask is available, manage thus, on the other hand, can't reduce growth property production of foreign matters itself.In addition, in the invention that patent documentation 2 is put down in writing,, therefore be difficult to ammonia is removed from the epidermis space fully because ammonia is the material that in common atmosphere, exists.
As above-mentioned patent documentation was put down in writing, in the photomask (so-called reticle mask) of semiconductor device manufacturing usefulness such as LSI, the fine patterns tendency was remarkable, for fine pattern is carried out exploring, had used the extremely short light source of KrF light, the such wavelength of ArF light.Therefore such short wavelength illumination light is because energy is big, makes to constitute the photomask that shone and the material activation of reticle mask, thereby it is reacted, and is easy to generate foreign matter thus.
On the other hand; Use the large-scale photomask that uses in (TFT, color filter etc.) in the liquid-crystal apparatus manufacturing; Compare with photomask with above-mentioned semiconductor manufacturing; The miniaturization of its pattern tendency so obvious, but because area is big and to the requirement of exposure, adopt the exposure light source (wavelength that comprise i ray, h ray, g ray) of wavelength coverage at i ray～g ray mostly.Therefore this light source does not exist the chemical reaction that brings out the photomask surface and the problem that produces the foreign matter that kind basically because its luminous energy is so big unlike above-mentioned light source.
Yet, in above-mentioned large-scale photomask, also occurred when photomask being used the stipulated time (for example more than 1 year) or taking care of, on optical mask pattern formation face, being created in the situation of non-existent foreign matter when epidermis is installed recently.The size of this growth property foreign matter is about 1 μ m～50 μ m, and for example, its size has influence on the pattern transfer precision of TFT substrate etc. and becomes the origin cause of formation of unacceptable product.Especially in the large-scale photomask (one side is the square photomask more than the 300mm etc.) of liquid crystal indicator manufacturing usefulness, tend to produce above-mentioned foreign matter.In addition, if above-mentioned large-scale photomask even therefore the speed of growth of foreign matter is slow, but through certain time, also can produce necessity that the foreign matter of growth is removed as defective owing to also have the operating period to reach the kind in 2～3 years.In order to remove this defective, just must take off epidermis, through cleaning, inspection, and epidermis is installed once more, but under the situation of large-scale mask, is just needed king-sized load operation, from the production efficiency of liquid crystal panel etc., all be the not good situation of the utmost point.
This growth property foreign matter mainly produces on the face that is formed with the photomask that contains Cr, so with the edge of photomask pattern be starting point easily through the time growth.In addition, its generation of discovery such as inventor with the exposure frequency of photomask is compared and the environmental baselines such as site of storage of photomask have very strong correlativity.This be considered to since recently the environment for use of photomask, preserve that environment changes, whenever the concentration ratio that contains the predetermined substance in multiple material or the atmosphere in the existing atmosphere of photomask all wanted high situation in the past, and increase caused.
As stated, can know the growth property foreign matter as problem of the present invention, its character is diverse with the character of the foreign matter that produced in photomask in the semiconductor device manufacturing in the past, is to be produced by different reasons.
Summary of the invention
The present invention is in view of above-mentioned problem, and its purpose is, a kind of manufacturing approach that reduces the photomask of the surperficial growth property foreign matter of photomask is provided infalliblely.
The process inventor etc. discover that this growth property foreign matter is easy to generate especially under the high situation of humidity.And then clear and definite growth property production of foreign matters as problem of the present invention occurs in the photomask that contains Cr and easily for single component film but form in the film of stepped construction of different layers.
Therefore, to achieve these goals, the inventor etc. have analyzed this growth property foreign matter composition, generation source etc. is done with probe, and concentrated on studies to generation mechanism etc.Its result has found that this growth property foreign matter contains oxalic acid and ammonia (containing ion or salt).And then; The access times of the photomask in growth property production of foreign matters and the exposure device do not have any correlativity; But has correlativity with the time length that in certain environment, exists; And growth property production of foreign matters amount receives the very big influence of environmental baselines such as the use, keeping of photomask, can predict that thus the use of photomask, the surrounding material that exists in the environment certainly are relevant with production of foreign matters.That is, find the residue etc. of above-mentioned surrounding material and the material that when photomask is made, uses or produce the reason that some reaction is the generation foreign matter from the material of the formation thing (containing epidermis) of photomask self.
In addition, above-mentioned growth property foreign matter is owing to be difficult to produce near the back side, periphery at photomask, and on the film figure that forms, produces easily, can infer that thus the photomask that forms pattern constitutes thing (particularly being Cr or its compound) and reacts relevant.Yet generally speaking, Metal Cr is difficult to produce situation about reacting with other elements, ion under normal temperature keeping state.
On the other hand, think that the Cr of film forming is in the photomask (or anti-reflective film) adopting sputtering method, have active higher ionization (Cr with certain probability sometimes
2+, Cr
3+Deng) material of state, such chemical seed becomes the beginning, promotes with the reaction of surrounding material foreign matter to be produced, and perhaps makes its growth.Perhaps think in the above-mentioned photomask contained Metal Cr through contacting, can promote the generation of active higher ionization Cr with surrounding material.
And then, can easily imagine because the edge that the foreign matter generation tends to film figure is a starting point, therefore on the pattern cross section that forms through etching, there is above-mentioned active chromium easily.In addition, TFT makes with large-scale photomask and adopts wet etching to make light-proofness film (containing Cr) form pattern usually.As wet etchant, use with the wet etchant of ammonium ceric nitrate mostly as principal ingredient.
In addition, through the inventor's etc. research, under high humility (for example more than 80%), the generation of visible foreign matters is more, therefore can understand through contacting with the surrounding material of high humility, is easy to generate Ionized Cr, and/or be easy to generate foreign matter.
Further analysis result detects contained Cr ion (Cr in the photomask etc. of Ionized oxalic acid and photomask in this growth property foreign matter
2+, Cr
3+Deng) coordination, at this, ammonia carries out the salt of be combined into for being the main body with oxalic acid and ammonia, and growth has taken place in crystal.Therefore, the inventor etc. think through contained ionization Cr in the photomask that reduces photomask etc., perhaps suppress the ionization of Cr, can prevent growth property production of foreign matters.
That is to say; The manufacturing approach of photomask of the present invention; Be that to make what on light-transmitting substrate, form be the manufacturing approach that the film of principal ingredient forms the photomask that pattern obtains with Cr, be included in and form the operation of predetermined pattern on the said film and be reduced in that said pattern forms and the amount of contained Ionized Cr or suppress the ionization of Cr and the Cr ion that carries out reduces and handles in the said film that obtains.
In this case, the Cr ion reduce to be handled preferred: comprise with below the wavelength 200nm and intensity 30mW/cm
2Above light carries out treatment with irradiation, or is included under 150 ℃～500 ℃ the temperature the processing of film heating more than 1 hour above-mentioned film.
This surface treatment is to work in the surface of film to Cr not only, also worked in the pattern cross section, thereby effectively.
And then film also can be photomask, anti-reflective film or semi-transparent film, the situation of the film that obtains for adopting sputtering film-forming, or adopts wet etch method and forms the cross section of pattern, and effect of the present invention is significant.
In addition, film of the present invention will be for forming different a plurality of layers when carrying out the range upon range of film that obtains, and effect is remarkable.In this case, when humidity was high, a plurality of layers were realized the battery spline structure by electrolyte solution, and the ionization of institute's containing metal (being Cr here) takes place thus especially easily.Therefore, in this case, surface treatment of the present invention is effective especially.
For example, reduce with regard to Cr ion of the present invention and to handle and usefulness can form the oxide of insulativity in fact on above-mentioned film, thus, be insulated between a plurality of layers, ionization is inhibited.In addition, Cr ion of the present invention reduces to be handled, and when acting on a plurality of layers that contain Cr, both form same oxide and do not produce potential difference (PD), and the ionization of Cr is inhibited thus.Because this active one or more influence, processing of the present invention plays a role effectively.
In addition, the present invention also comprises: through for irradiation contains the exposure light of the wavelength of i ray, h ray, g ray based on the photomask of above-mentioned manufacturing approach, thereby on the etchant resist that is formed on the transfer printing body pattern transfer-printing method of pattern transferring.In this pattern transfer-printing method, during pattern transferring, effect of the present invention is remarkable under the atmosphere that has oxalate denominationby and ammonium radical ion to exist.In this pattern transfer-printing method, during pattern transferring, effect is remarkable in the atmosphere of humidity more than 80%.
The present invention brings into play significant effect to the photomask that uses in this purposes.Even if especially can obtain the exposure in high humilityization, the photomask that keeping also can suppress the excellence of growth property production of foreign matters in the process.
In the use/keeping environment of liquid crystal indicator manufacturing with photomask, the compound that uses when having etching, development etc. contains above-mentioned oxalate denominationby and ammonium radical ion and can't stop fully.And then owing to progress, the efficient raising of operation in recent years, the concentration that these ions can take place surpasses the situation of ormal weight.Even under the environment of production scene so, also can slow down the foreign matter that takes place in the optical mask pattern significantly through embodiment of the present invention and produce, can stop undesirable condition.
The manufacturing approach of photomask involved in the present invention; Before epidermis is installed; Contained ionization Cr perhaps suppresses the Ionized Cr ion reduction processing of Cr in the photomasks that contain Cr of enforcement reduction photomask etc.; The Cr ion of the main cause that produces as growth property foreign matter and the reaction of surrounding material can be reduced, suppress thus, growth property production of foreign matters can be suppressed.
Description of drawings
Fig. 1 is the sectional view of the operation of the photo mask manufacturing method in the expression embodiment of the present invention.
Fig. 2 is the sectional view of the operation of the photo mask manufacturing method in the expression embodiment of the present invention.
Embodiment
Below, use accompanying drawing, embodiment etc. that an embodiment of the invention are described.Need to prove, these accompanying drawings, embodiment etc. and the present invention of explanation illustration, but scope of the present invention is not done with restriction.As long as coincide with purport of the present invention, other embodiment can certainly belong to category of the present invention.
Fig. 1 and Fig. 2 show the cross section of photomask of each operation of manufacturing approach involved in the present invention.
The manufacturing approach of photomask involved in the present invention comprises (film formation process), (resist-coated operation), (corrosion-resisting pattern formation operation), (the photomask pattern forms operation), (resist is removed operation) and (the Cr ion reduces operation) at least; And after making photomask, be implemented in epidermis (epidermis installation procedure) is installed on the pattern formation face.Below each operation is described.
(film formation process)
At first, shown in Fig. 1 (a), on the first type surface of the light-transmitting substrate 1 that forms by quartz glass etc., utilize method such as sputter to form photomask 2, make photomask blank thus.For example, can use chromium, use argon gas as sputter gas as sputtering target.And then, can in sputter gas, import oxygen, nitrogen or the carbon dioxide etc. of suitable flow.
In the present invention, the photomask of the stepped construction that effect is especially high, range upon range of by forming different a plurality of layers.Boundary between each layer and the layer can be clear and definite, also can be according to forming to tilt.
For example, in the sputter equipment of on-line, through combining as the kind, the amount that are changed the sputter gas of supply by the conveying of the substrate of phragmoplast, the layer that for example can constitute by CrO in Cr layer laminated.Upper layer side also can be brought into play the function of the anti-reflecting layer of photomask.
As light-transmitting substrate 1, the substrate about for example can used thickness 5mm～15mm.As photomask 2, as stated, oxide, nitride or the carbonide etc. that preferably use Cr (chromium) or Cr are with the film of Cr as principal ingredient.In addition; Photomask 2 can be the film of the semi-transparency of transmission a part of exposure light, and then, when be multilayer laminated situation (for example; A plurality of photomasks, photomask and anti-reflective film or photomask and semi-transparent film) time, can be respectively semi-transparent film and photomask.
(resist-coated operation)
Then, shown in Fig. 1 (b), on the photomask on the light-transmitting substrate 12, be coated with erosion resistant, thereby form etchant resist 3 in film forming.As the coating process of erosion resistant, can adopt the method for having used well known devices such as spin coater.
(corrosion-resisting pattern formation operation)
Then, shown in Fig. 1 (c),, on etchant resist 3, describe pattern (selectivity exposure) according to required pattern.This pattern plotter for example can adopt the draught machine that has used laser or electron ray to carry out.Then, through known processing such as developing, form corrosion-resisting pattern 3a.
(the photomask pattern forms operation)
Then, shown in Fig. 1 (d), as mask, photomask 2 is carried out etch processes, form photomask pattern 2a thus with the corrosion-resisting pattern 3a of formation like this.To the not special restriction of the mode of etch processes, but for example can use known wet etching process method.Particularly near the growth property foreign matter from producing the pattern cross section of the photomask that when with following wet etch solution the chromium photomask being carried out etching, forms, the present invention has remarkable result, and wet etch solution is said to be principal ingredient with the ammonium ceric nitrate.
(resist is removed operation)
Then, through corrosion-resisting pattern 3a being removed, shown in Fig. 2 (e), on light-transmitting substrate 1, form photomask pattern 2a thus with known method.
(the Cr ion reduces operation)
Then, handle as follows, that is, making with Cr is contained Cr among the photomask pattern 2a of principal ingredient
2+, Cr
3+Reduce in the Cr ion, perhaps suppress its generation.This is in order to prevent growth property production of foreign matters.Its method for example has following two methods.
(1) photo-irradiation treatment
With the ultraviolet ray (the for example Excimer uv lamp of wavelength 172nm) below the wavelength 200nm with intensity 30mW/cm
2More than (40mW/cm for example
2) film figure is shone.Through implementing and should handle, the Ionized Cr that generates in the film figure that contains Cr that on photomask, forms owing to the energy of UV light is activated, reacts with oxygen and becomes the lower oxyde (Cr of Cr
2O
3, Cr
3O
4Deng), the amount of Cr ion reduces.For this reason, the coordination of oxalic acid is suppressed, and growth property production of foreign matters is suppressed.If the irradiation light wavelength is below 200nm, then the activation effect of contained Cr improves in the film, generate enough Cr oxides, so embodiment of the present invention is desirable.In addition, when the irradiation light intensity at 30mW/cm
2When above, the Cr ion in the film is by fully activation, so embodiment of the present invention is desirable.
(2) heat treated
Under 150 ℃～500 ℃ temperature (preferred 200 ℃～350 ℃), film figure was heated about 1 hour.Through this heating, the oxidation of the surface of photomask pattern 2a and inner Cr is quickened, and the Cr ion becomes the lower oxyde (Cr of Cr thus
2O
3, Cr
3O
4Deng), the amount of Cr ion reduces.So, can reduce being inhibited of growth property foreign matter with the amount of the Cr ion of oxalic acid coordination.Through temperature being made as more than 150 ℃, during Cr activation in making film, even also can fully carry out oxidation to the cross section of film figure.In addition, even surpass 500 ℃, above-mentioned effect is not seen enhancing yet, and it is suitable being made as below 500 ℃.
Through implementing arbitrary side or the both sides in above-mentioned two methods, in the photomask shown in Fig. 2 (f), can reduce growth property production of foreign matters infalliblely.
In addition, utilizing the Cr ion of said method to reduce operation, when the film that is principal ingredient adopts sputtering method to form, is more effective with the Cr that becomes object.The film that utilizes sputtering method to form, structurally the gap is more, and oxidation takes place easily.Especially when heat treated, can be oxidized to inside always, can stabilization.In addition, in any means, also work, so to the containing the Cr film and handle of the state that forms pattern the time, obtain effect of the present invention significantly from cross section to film figure.
(epidermis installation procedure)
Then, shown in Fig. 2 (g), the photomask of making for reducing operation via the Cr ion is installed epidermis 4 with known method on its pattern formation face.Epidermis can use cellulose-based or the epidermis film of fluoropolymer polymer system, cyclic olefine etc. and the known epidermis that the epidermis frame constitutes such as nitrocellulose, cellulose esters.
Utilize said method, in photomask, the Ionized Cr among the photomask pattern 2a is reduced.In addition, adopt said method, can suppress Cr contained among the photomask pattern 2a and contact and ionizable situation with surrounding material.For this reason; With above-mentioned photomask together with reducing the photomask that has passed through same operation the operation except implementing the Cr ion; Visualization has or not growth property production of foreign matters when being placed in the same atmosphere, the result is in photomask of the present invention, and growth property production of foreign matters is suppressed.
In addition; Will be based on the photomask of the invention described above method for making, reduce the photomask of treatment process with the Cr ion of embodiment of the present invention not; After being placed in same (having oxalic acid) atmosphere; (the flight time secondary ion mass spectrometry (SIMS): Time-of-flight secondary ion massspectrometer) the Cr patterned surfaces is analyzed, the result can know the surface of the Cr ion reduction processing that only is embodiment of the present invention, does not detect the coordination compound (CrC of oxalic acid and Cr basically to utilize TOF-SIMS
2O
4 -, CrC
2O
5H
-, etc.) spectrum peak.
Based on the embodiment of pattern transfer-printing method of the present invention, through the photomask irradiation that utilizes above-mentioned manufacturing approach to obtain being contained the exposure light of the wavelength of i ray, h ray, g ray, pattern transferring on the etchant resist that is formed on the transfer printing body thus.In this case, when under the atmosphere that is having oxalate denominationby and ammonium radical ion to exist during pattern transferring, effect of the present invention is remarkable, and in addition, during pattern transferring, effect of the present invention is remarkable in the atmosphere of humidity more than 80%.
In addition, the invention is not restricted to above-mentioned embodiment, can be through suitably implementing after changing.For example, in the above-described embodiment, show the example that on light-transmitting substrate 1, only forms photomask 2, but be not limited thereto, also can form other film such as semi-transparent film, anti-reflective film.In this case, after all film formation and pattern formation end, implement the Cr ion and reduce operation, thus,, also obtain same effect even in semi-transparent film, anti-reflective film etc., contain Cr.
In addition, the material in the above-mentioned embodiment, size, processing order etc. are examples, also can in the scope of performance effect of the present invention, carry out various enforcements after changing.In addition, can in the scope that does not break away from the object of the invention, suitably implement after changing.
Claims (10)
1. the manufacturing approach of a photomask is to being the manufacturing approach that the film of principal ingredient forms the photomask that obtains behind the pattern with Cr what form on the light-transmitting substrate, it is characterized in that, comprises following operation:
On said film, form the operation of predetermined pattern; And
Carry out the Cr ion and reduce treatment process, that is: reduce the amount that formed Ionized Cr contained in the said film of said pattern, or suppress the ionization of Cr,
And said Cr ion reduces and is treated to, with below the wavelength 200nm and intensity 30mW/cm
2The processing that above light shines said film perhaps, is heated the processing more than 1 hour to said film under 150 ℃～500 ℃ temperature.
2. the manufacturing approach of photomask according to claim 1 is characterized in that, said film is photomask, anti-reflective film or semi-transparent film.
3. the manufacturing approach of photomask according to claim 1 is characterized in that, said film is the film that obtains through sputtering film-forming.
4. the manufacturing approach of photomask according to claim 1 is characterized in that, said film has the cross section that has formed pattern through wet etching.
5. the manufacturing approach of photomask according to claim 1 is characterized in that, said film is with the film of forming different a plurality of folding layer by layer and obtaining.
6. the manufacturing approach of photomask according to claim 5 is characterized in that, it is on said film, to form the oxide that has insulativity in fact that said Cr ion reduces processing.
7. the manufacturing approach of photomask according to claim 5 is characterized in that, said film is with the folded layer by layer film that obtains that all is principal ingredient with Cr.
8. pattern transfer-printing method; It is characterized in that; Through to utilizing the photomask that the manufacturing approach of each described photomask obtains in the claim 1～3, irradiation comprises the exposure light of the wavelength of i ray, h ray and g ray, with pattern transfer on the etchant resist that forms on the transfer printing body.
9. pattern transfer-printing method according to claim 8 is characterized in that, pattern transferring under the atmosphere that has oxalate denominationby and ammonium radical ion to exist.
10. pattern transfer-printing method according to claim 8 is characterized in that, pattern transferring in the atmosphere of humidity more than 80%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008297441A JP5114367B2 (en) | 2008-11-21 | 2008-11-21 | Photomask manufacturing method and pattern transfer method using the photomask |
| JP2008-297441 | 2008-11-21 |
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| CN101738847A CN101738847A (en) | 2010-06-16 |
| CN101738847B true CN101738847B (en) | 2012-06-13 |
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| CN2009102218842A Expired - Fee Related CN101738847B (en) | 2008-11-21 | 2009-11-19 | Method of manufacturing photomask and pattren transfer method using the smae |
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| JP (1) | JP5114367B2 (en) |
| KR (1) | KR101197346B1 (en) |
| CN (1) | CN101738847B (en) |
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| JP6900872B2 (en) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
| JP6900873B2 (en) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1553283A (en) * | 2003-05-29 | 2004-12-08 | 中国科学院光电技术研究所 | Metal mask plate |
| JP2006310553A (en) * | 2005-04-28 | 2006-11-09 | Elpida Memory Inc | Reticle, reticle stage, and reduced-projection exposing apparatus |
| CN1940717A (en) * | 2005-09-28 | 2007-04-04 | 应用材料公司 | Method of plasma etching a chromium layer through a carbon hardmask suitable for photomask fabrication |
| JP2007256922A (en) * | 2006-02-22 | 2007-10-04 | Hoya Corp | Pattern forming method, method of manufacturing gray tone mask, and pattern transfer method |
| CN101075086A (en) * | 2006-05-18 | 2007-11-21 | Hoya株式会社 | Photomask and exposure method |
| CN101183211A (en) * | 2006-11-14 | 2008-05-21 | 国际商业机器公司 | Method to etch chrome for photomask fabrication |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710967B2 (en) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | Manufacturing method of integrated circuit device |
| US6714625B1 (en) * | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
| DE10393095B4 (en) | 2002-12-26 | 2011-07-07 | Hoya Corp. | Lithography mask blank |
| JP2005193210A (en) * | 2004-01-09 | 2005-07-21 | Seiko Epson Corp | Organic matter removal method |
| JP4475510B2 (en) | 2004-06-25 | 2010-06-09 | Ｈｏｙａ株式会社 | Lithographic mask manufacturing method, lithography mask, and lithography mask exposure method |
| JP4579728B2 (en) * | 2005-03-17 | 2010-11-10 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method, photomask blank and photomask manufacturing method, and photomask |
| WO2006101315A1 (en) * | 2005-03-21 | 2006-09-28 | Pkl Co., Ltd. | Device and method for cleaning photomask |
| JP4324944B2 (en) * | 2005-06-29 | 2009-09-02 | 信越ポリマー株式会社 | Precision material storage container |
| WO2007058286A1 (en) * | 2005-11-18 | 2007-05-24 | Mitsubishi Gas Chemical Company, Inc. | Method and apparatus for cleaning substrate |
| JP4760404B2 (en) * | 2006-01-31 | 2011-08-31 | 大日本印刷株式会社 | Photo mask |
| WO2007095488A2 (en) * | 2006-02-13 | 2007-08-23 | Toppan Photomasks, Inc. | Apparatus and method for preventing haze growth on a surface of a substrate |
| TWI407248B (en) * | 2006-12-05 | 2013-09-01 | Hoya Corp | Photomask inspecting apparatus, photomask inspecting method, method of producing a photomask for use in manufacturing a liquid crystal device and pattern transferring method |
| JP5036349B2 (en) * | 2007-02-28 | 2012-09-26 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method and gray-tone mask manufacturing method |
| EP2171539B1 (en) * | 2007-07-12 | 2014-09-03 | Carl Zeiss SMS Ltd | Method and apparatus for duv transmission mapping |
-
2008
- 2008-11-21 JP JP2008297441A patent/JP5114367B2/en active Active
-
2009
- 2009-11-19 CN CN2009102218842A patent/CN101738847B/en not_active Expired - Fee Related
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- 2009-11-20 TW TW098139420A patent/TWI421626B/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1553283A (en) * | 2003-05-29 | 2004-12-08 | 中国科学院光电技术研究所 | Metal mask plate |
| JP2006310553A (en) * | 2005-04-28 | 2006-11-09 | Elpida Memory Inc | Reticle, reticle stage, and reduced-projection exposing apparatus |
| CN1940717A (en) * | 2005-09-28 | 2007-04-04 | 应用材料公司 | Method of plasma etching a chromium layer through a carbon hardmask suitable for photomask fabrication |
| JP2007256922A (en) * | 2006-02-22 | 2007-10-04 | Hoya Corp | Pattern forming method, method of manufacturing gray tone mask, and pattern transfer method |
| CN101075086A (en) * | 2006-05-18 | 2007-11-21 | Hoya株式会社 | Photomask and exposure method |
| CN101183211A (en) * | 2006-11-14 | 2008-05-21 | 国际商业机器公司 | Method to etch chrome for photomask fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI421626B (en) | 2014-01-01 |
| CN101738847A (en) | 2010-06-16 |
| JP5114367B2 (en) | 2013-01-09 |
| KR20100057512A (en) | 2010-05-31 |
| JP2010122543A (en) | 2010-06-03 |
| KR101197346B1 (en) | 2012-12-24 |
| TW201030453A (en) | 2010-08-16 |
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