CN101714594B - Method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode - Google Patents
Method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode Download PDFInfo
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- CN101714594B CN101714594B CN2009101023211A CN200910102321A CN101714594B CN 101714594 B CN101714594 B CN 101714594B CN 2009101023211 A CN2009101023211 A CN 2009101023211A CN 200910102321 A CN200910102321 A CN 200910102321A CN 101714594 B CN101714594 B CN 101714594B
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Abstract
The invention provides a method for coarsening the surface of an epitaxial layer of a gallium nitride-based light-emitting diode, which comprises the following steps of: (1) growing a gallium nitride epitaxial layer on a patterned sapphire substrate; (2) growing a SiO2 thin film or a SiNx thin film on the surface of the gallium nitride epitaxial layer; (3) coating a photoresist on the SiO2 thin film or the SiNx thin film to manufacture photoetching patterns; (4) etching the SiO2 thin film or the SiNx thin film below a photoresist window, stripping the photoresist to obtain a patterned SiO2 thin film or SiNx thin film; (5) epitaxially growing P type gallium nitride on the SiO2 thin film or the SiNx thin film obtained by the step (4); and (6) corroding the SiO2 thin film or the SiNx thin film to obtain a convex-concave surface. The method solves the problem that the surface shape of the epitaxial layer of the gallium nitride-based LED on the patterned sapphire substrate is difficult to coarsen, avoids the damages to the epitaxial layer caused by dry etching, and improves the light-emitting effect of the LED.
Description
Technical field
The invention discloses a kind of method of making woven structure surface or surface coarsening at epitaxial layer of gallium nitride-based light-emitting diode.
Background technology
The basic structure of gallium nitride based light emitting diode is the luminous epitaxial loayer of epitaxial growth of gallium nitride on Sapphire Substrate, is just making at the upper surface of epitaxial loayer then/negative metal electrode, and injection current makes it to convert electric energy to luminous energy.Sapphire Substrate is that maximum epitaxy of gallium nitride substrates is used in present light-emitting diode industrialization, because the lattice constant of sapphire and gallium nitride does not match and the difference of thermal coefficient of expansion is very big, the defect concentration of gallium nitride film is very high during epitaxial growth, has reduced the LED luminous efficiency.
With graphic sapphire substrate (patterned sapphire substrates, be called for short PSS) as growth substrates a kind of effective ways of reduction epitaxial layer of gallium nitride defect concentration, adopt the epitaxial layer of gallium nitride crystal mass of graphic sapphire substrate obviously to improve, epi-layer surface is smooth smooth, defect concentration obviously reduces, and luminous efficiency is greatly improved.
Because the refractive index of gallium nitride is 2.4, than common material height, general closed planar LED light is subjected to the critical angle restriction can not outgoing, and it is not high that light takes out efficient.More way is to obtain high-efficiency LED by changing LED surface texture and profile at present, and the method that changes the LED surface topography is a surface roughening.
For growing gallium nitride epitaxial loayer on the common Sapphire Substrate, gallium nitride and sapphire lattice do not match the dislocation line that forms can along with outer layer growth always along reaching epi-layer surface, can be during the growing P-type gallium nitride by changing growth temperature, forming with the dislocation line in epi-layer surface is a series of pits at center, reach the effect of coarse surface, can improve the restriction of critical angle like this, increase and get optical efficiency bright dipping.And for growing gallium nitride epitaxial loayer on the graphic sapphire substrate, because crystal mass is better, epitaxy defect is less, is difficult to during epitaxial growth P type gallium nitride make the epi-layer surface coarse injustice that becomes by changing growth temperature.
Summary of the invention
The present invention is intended to overcome the epitaxy of gallium nitride laminar surface of growing on the above-mentioned graphic sapphire substrate of mentioning and is difficult to coarse problem, proposes the method that a kind of epitaxial layer of gallium nitride surface topography that makes the graphic sapphire substrate becomes coarse.
The method of gallium nitride based light emitting diode outside imperial palace laminar surface alligatoring comprises:
(1) growing gallium nitride epitaxial loayer on the graphic sapphire substrate;
(2) at epitaxial layer of gallium nitride superficial growth SiO
2Film or SiNx film;
(3) at SiO
2Apply photoresist on film or the SiNx film, make litho pattern;
(4) SiO under the etching photoresist window
2Perhaps the SiNx film is transferred to SiO with litho pattern
2Perhaps on the SiNx film, obtain patterned SiO after removing photoresist
2Perhaps SiNx film;
(5) SiO that obtains of step (4)
2Perhaps epitaxial growth P type gallium nitride on the SiNx film, the thickness of the P type gallium nitride of described growth is no more than SiO
2The perhaps thickness of SiNx film;
(6) corrosion SiO
2Perhaps the SiNx film obtains the surface that convex-concave rises and falls.
The method of gallium nitride based LED coarsening surface of epitaxial layer of the present invention has the following advantages:
(1) overcome the problem that the gallium nitride based LED epi-layer surface pattern on the graphic sapphire substrate is difficult to do coarsely;
(2) avoided dry etching that epitaxial loayer is damaged;
(3) improved the light effect that goes out of LED.
Description of drawings
Fig. 1 is a graphic sapphire substrate generalized section
Fig. 2 is a graphic sapphire substrate growing gallium nitride extension luminescent layer generalized section
Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d be of the present invention be to make the shaggy technical process schematic diagram of epitaxial layer of gallium nitride
11-graphic sapphire substrate
The 21-epitaxial layer of gallium nitride
31-SiO
2Film
The SiO that stays after 32-photoetching, the corrosion
2Film
33-is long at SiO
2P type gallium nitride between the film
34-removes SiO
2After the epitaxy of gallium nitride laminar surface
Embodiment
Below with reference to Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d, with SiO
2As mask is example, does specifying with regard to embodiments of the present invention.
The method of coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode comprises:
(1) growing gallium nitride epitaxial loayer 21 on graphic sapphire substrate 11;
(2) at epitaxial layer of gallium nitride 21 superficial growth SiO
2 Film 31, the method for growth can be evaporation, sputter or epitaxial deposition etc., thickness between 20～1000nm, its more excellent real-time mode be thickness between 20～500nm, finish SiO
2 Film 31 post-depositional outside imperial palace sheet generalized sections are shown in Fig. 3-a;
(3) at SiO
2Apply photoresist on the film, cover photolithography plate, window is left in exposure on photoresist, then with the photoresist of leaving window as corrosion SiO
2Mask, wet etching SiO
2Film, Fig. 3 b are corrosion SiO
2Film is removed the epitaxial wafer generalized section behind the photoresist, SiO
2Film forms the figure 32 that series is discrete at the epitaxy of gallium nitride laminar surface, the shape of figure 32 can be circle, hexagon, rhombus, also can be by selecting the positive negativity of photoresist, make and stay part and remove part on the contrary, the figure dimension is between 0.5～5um, and the figure spacing is between 0.5～5um.
(4) epitaxial wafer that step (3) is obtained is put into the epitaxial furnace cavity, and continued growth P type gallium nitride has SiO
2Local gallium nitride longly do not get on, gallium nitride is from SiO
2Between the gap along the epitaxial loayer longitudinal growth, the gallium nitride thickness of growth is no more than SiO
2Thickness, P type gallium nitride just rises and fills SiO like this
2The effect in gap, and can not cover SiO
2, as 32 among the figure-3b.
(5) continue to utilize wet etching, remove SiO
2, obtain the rough surface 34 shown in figure-3d, so far, the epi-layer surface technical process is finished on the alligatoring PSS substrate that the present invention proposes;
Be to be understood that to be that the foregoing description is just to explanation of the present invention, rather than limitation of the present invention, anyly do not exceed the replacement of the unsubstantiality in the connotation scope of the present invention or the innovation and creation of modification all fall within the protection range of the present invention.
Claims (3)
1. the method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode is characterized in that comprising:
(1) growing gallium nitride epitaxial loayer on the graphic sapphire substrate;
(2) at epitaxial layer of gallium nitride superficial growth SiO
2Film or SiNx film;
(3) at SiO
2Apply photoresist on film or the SiNx film, make litho pattern;
(4) SiO under the etching photoresist window
2Perhaps the SiNx film is transferred to SiO with litho pattern
2Perhaps on the SiNx film, obtain patterned SiO after removing photoresist
2Perhaps SiNx film;
(5) SiO that obtains of step (4)
2Perhaps epitaxial growth P type gallium nitride on the SiNx film, the thickness of the P type gallium nitride of described growth is no more than SiO
2The perhaps thickness of SiNx film;
(6) corrosion SiO
2Perhaps the SiNx film obtains the surface that convex-concave rises and falls.
2. the method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode as claimed in claim 1 is characterized in that the described SiO of step (2)
2The thickness of film or SiNx film is between 20～1000nm.
3. the method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode as claimed in claim 1 is characterized in that the described SiO of step (2)
2The thickness of film or SiNx film is between 20～500nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101023211A CN101714594B (en) | 2009-08-28 | 2009-08-28 | Method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode |
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| CN2009101023211A CN101714594B (en) | 2009-08-28 | 2009-08-28 | Method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode |
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| CN101714594A CN101714594A (en) | 2010-05-26 |
| CN101714594B true CN101714594B (en) | 2011-06-29 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937951B (en) * | 2010-08-11 | 2012-02-22 | 中国科学院半导体研究所 | Method for corroding light-emitting diode transfer substrate with gallium nitride-based vertical structure |
| CN104538282A (en) * | 2014-12-17 | 2015-04-22 | 江苏能华微电子科技发展有限公司 | Growing method of vertical structure power device epitaxial layer and power device |
| CN111477542A (en) * | 2020-05-25 | 2020-07-31 | 芜湖启迪半导体有限公司 | Super junction-containing 3C-SiC epitaxial structure and preparation method thereof |
| CN112968085A (en) * | 2020-12-04 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Epitaxial wafer manufacturing method, chip manufacturing method and chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294650C (en) * | 2004-08-19 | 2007-01-10 | 中国科学院物理研究所 | Method for preparing high quality GaN base material on specific saphire pattern substrate |
| CN100372135C (en) * | 2004-12-09 | 2008-02-27 | 璨圆光电股份有限公司 | High brightness gallium nitrate kind LED structure |
| CN101159307A (en) * | 2007-11-16 | 2008-04-09 | 北京工业大学 | Emitting surface semiconductor LED with nanostructure and its preparing process |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294650C (en) * | 2004-08-19 | 2007-01-10 | 中国科学院物理研究所 | Method for preparing high quality GaN base material on specific saphire pattern substrate |
| CN100372135C (en) * | 2004-12-09 | 2008-02-27 | 璨圆光电股份有限公司 | High brightness gallium nitrate kind LED structure |
| CN101159307A (en) * | 2007-11-16 | 2008-04-09 | 北京工业大学 | Emitting surface semiconductor LED with nanostructure and its preparing process |
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