CN101693515A - Preparation method of patternable thin polymer film in MEMS field - Google Patents
Preparation method of patternable thin polymer film in MEMS field Download PDFInfo
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- CN101693515A CN101693515A CN200910309152A CN200910309152A CN101693515A CN 101693515 A CN101693515 A CN 101693515A CN 200910309152 A CN200910309152 A CN 200910309152A CN 200910309152 A CN200910309152 A CN 200910309152A CN 101693515 A CN101693515 A CN 101693515A
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Abstract
A preparation method of a patternable thin polymer film in the MEMS field comprises the steps of sputtering a binding layer and a metal seed layer on a foundation base and any patterned structure, dropping photo resist and photo-etching patterns to form a patterned metal seed layer after developing treatment, implementing electrophoresis treatment to produce a flexible polymer thin film through taking the metal seed layer as the negative electrode and inert metal as the positive electrode, removing a photo resist mask layer after primary solidification treatment, placing the foundation base with the flexible polymer thin film in an oven again to implement secondary solidification treatment, and finally getting the solidified polymer thin film structure. The patternable thin polymer film has the advantages of one-shot pattern forming, simple technology, convenient operation and low cost, has a good binding force with backing members and metal, and is adaptive to mass integrated manufacture.
Description
Technical field
That the present invention relates to is a kind of preparation method of micro-electromechanical system field, specifically is the graphically preparation method of thin polymer film in a kind of MEMS of being used for field.
Background technology
Micro mechanical system (MEMS) processing is the means of making microsensor, microactrator, micro-structural and system, and the planar technology among the MEMS can be described as the combination of film preparing technology and photoetching, lithographic technique.Surface micromachined is usually included in a large amount of different films of deposit on the top of substrate, carries out deposit, etching and Butut operation successively, and with the microstructure that obtains expecting, these films are usually as mask layer, structure sheaf or sacrifice layer.Film preparing technology occupies critical role in the MEMS processing technology, mask layer, structure sheaf or sacrifice layer all be unable to do without membrane structure.The conventional films preparation of using among the MEMS is mainly: (1) mechanical spin-coating method (Spin coating), operation principle is the high speed rotary substrate, utilize centrifugal force to make to drop in on-chip glue to be coated in uniformly on the substrate, the film that is usually used in various collosol and gels (Sol-Gel) experiment is made; (2) vacuum film technology of preparing mainly comprises: Physical Vapor Deposition (PVD, physical vapour deposition (PVD)) and ChemicalVapor Deposition (CVD, chemical vapour deposition (CVD)) promptly form film by physics or chemical reaction on substrate; (3) magnetron sputtering method; (4) thermal oxidation method.
In the MEMS device, film preparation is one critical process of device fabrication.But traditional method for manufacturing thin film exists self shortcoming and limitation more or less.At first, film growth rates is slow, and the thickness of deposit is limited, is difficult to obtain the film of ideal thickness, as chemical vapour deposition (CVD) and sputtering method.Secondly, control preferably even can accomplish thickness, but its adhesion with substrate is very poor, as the negativity SU-8 photoresist that spin-coating method is prepared, its adhesion is one of main bottleneck of restriction SU-8 photoresist application always.Once more, a lot of films all are at high temperature to carry out deposit or growth usually, therefore the residual stress that exists in the film makes structure in the end discharge to have occurred the distortion warpage unsettled the time, can not keep the straight of cantilever design, directly affect device property, as vacuum film technology of preparing and thermal oxidation method, and these equipment price costlinesses, preparation cost is higher.At last, these method for manufacturing thin film all can not directly be realized the graphical of device architecture, it is graphical to need extra mask etching technology to realize, as reactive ion etching (RIE), plasma etching, ion beam etching or the like, these mask etching technology not only need selectivity mask material preferably, and the etching technics complexity, apparatus expensive, pattern side wall undercutting phenomenon is comparatively serious.
Find that through literature search the Chinese invention patent application of application number 200710039997.1 proposes the sandwich structure that employing SU-8 glue film wrapped nickel resistor stripe constitutes, to make the utilization structure of microdrive to prior art.This method can only large tracts of land be filmed, reverse side wet etching then, and poor selectivity is removed difficulty; And SU-8 glue film and substrate caking power are poor, are easy to come off.
Electrophoretic deposition (electrophoresis-coating) is a method of utilizing extra electric field to make to be suspended in the charged corpuscle directional migration in the electrophoresis liquid and be deposited on the substrate surface of one of electrode.Electrophoretic deposition is a kind of special forming method of filming that grows up over nearly 30 years, is the construction technology to the tool practical significance of waterborne polymeric.Adopt dc source, metal works is dipped in the electrophoresis liquid, and after the energising, the cationic polymer particle moves to cathode-workpiece, and anion coating particle anode workpiece moves, and is deposited on then on the workpiece, forms even, continuous filming at surface of the work.Reach certain thickness (paint film resistance arrives to a certain degree greatly) when filming, surface of the work forms insulating barrier, and " heteropole is inhaled mutually " stops, and electrophoretic deposition process finishes.
Summary of the invention
The present invention is directed to the prior art above shortcomings, the graphically preparation method of thin polymer film in a kind of MEMS of being used for field is provided, directly prepares patterned polymer thin-film material, one-shot forming, do not need extra mask etching figures processing, with the MEMS technical compatibility.Simultaneously, the electrophoresis polymer of this method preparation, compare polymeric materials such as spin on polymers SU-8 photoresist and CVD polymer P arylene, both improve much than the back with the adhesion of substrate substrate or metal for it, can prepare the MEMS device of the multicomponent material compatibility of various good bonding strength like this.And the polymer thin-film material of the present invention's preparation is easy to operate, and technology is simple, and is with low cost, is fit to integrated manufacturing in batches.
The present invention is achieved by the following technical solutions, the present invention includes following steps:
Step 1, on patterned structures in the clean substrate or sputter tack coat and metal seed layer successively;
Described substrate adopts sheet glass, silicon chip, aluminium oxide or pottery to make.Described tack coat of sputter successively and Seed Layer are meant: it is 2 * 10 that base vacuum pressure is set
-4Pa, operating pressure are 8 * 10
-1Pa, sputtering power 600W and sputtering time 30～60min, successively sputter Cr as tack coat, Cu as metal seed layer.
Described tack coat is Cr, is its thickness 600～800?
Described metal seed layer is Cu, is its thickness 800～1000?
Step 2, by getting rid of photoresist and photolithography patterning, then by having stayed patterned metal seed layer after the development treatment;
The described photoresist that gets rid of is meant: with rotating speed spin coating photoresist on metal seed layer of 1000～3000rpm/min;
Described photoresist is meant positive photoresist or negative photoresist.
It is negative electrode that step 3, the substrate that will have metal seed layer and inert metal immerse in the ability cathode electrophoresis liquid with the metal seed layer, and inert metal is an anode, carries out electrophoretic process, makes flexible polymer film;
Described ability cathode electrophoresis liquid is meant that mass percent concentration is 10%～70% cathode electrodip painting, and this cathode electrodip painting comprises: epoxy polyester type, acrylic type and pure polyester-type.
Described electrophoretic process is meant: adopt dc source, apply 50～100V voltage, behind energising 15～60s, the polymer in the electrophoresis liquid is adsorbed onto the conductive substrates surface under the function of current, forms flexible polymer film;
The thickness of described fexible film is 5～50 μ m;
Step 4, the substrate that will have a graphical fexible film place baking oven to carry out primary solidification and handle, remove photoresist mask layer by the wet etching method then, the substrate that will have fexible film at last places baking oven to carry out regelate once more and handles, obtain the cured polymer membrane structure.
Described primary solidification is handled and is meant: baking oven is arranged under 120 ℃ the environment and is cured 20～40min;
Described regelate is handled and is meant: baking oven is arranged under 200 ℃ the environment and is cured 20～40min.
The present invention is based on the MEMS process technology, and graphical conductive seed layer and electrophoretic techniques realize the graphically making of thin polymer film under the employing room temperature.Comparing the present invention with existing film preparing technology has the following advantages:
(1) patterned polymer thin-film material can directly be prepared by this method, and one-shot forming does not need extra mask etching figures processing, and controllable thickness, with the MEMS technical compatibility.
(2) the electrophoresis polymer and the substrate caking power of this method preparation are good.Test shows, the adhesion of electrophoresis polymer and substrate or metal material is 2.5MPa ~ 3.2MPa, and adopt the polymer of mechanical spin coating such as the adhesion of negativity SU-8 photoresist is 0.3MPa ~ 0.5MPa, and adopting the polymer of CVD technology moulding such as the adhesion of Parylene film is 0.67MPa ~ 0.8MPa.As can be seen, the electrophoresis thin polymer film is compared spin on polymers SU-8 photoresist and CVD polymer P arylene and is wanted big 4 ~ 8 times with the adhesion of substrate or metal.
(3) the present invention preparation graphically polymer thin-film material is easy to operate, technology is simple, and is with low cost, is fit to the integrated manufacturing of batch.
The specific embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1: general graphically thin polymer film preparation method
Present embodiment comprises the steps:
Step 1, ready substrate cleaned up after, sputter tack coat and Seed Layer successively in substrate;
The concrete operations parameter of described sputter is: base vacuum 2 * 10
-4Pa; Operating pressure: 8 * 10
-1Pa, power 600W, time 45min;
Described tack coat is Cr, is its thickness 700?
Described Seed Layer is Cu, is its thickness 900?
Step 2, by getting rid of photoresist and with metal structure mask version photolithography patterning, then by having stayed patterned Seed Layer after the development treatment;
Described concrete operations parameter of getting rid of photoresist is: 2000rpm/min;
Described photoresist thickness is 20 μ m.
Step 3, handle, make the high metal structure of 10 μ m at the enterprising electroplating of Seed Layer;
The concrete operations parameter of described electroplating processes is: current density 10mA/cm
2, time 30min;
The thickness of described metal structure is 10 μ m, is made by Cu;
Step 4, the substrate that will have metal structure and inert metal immerse in the ability cathode electrophoresis liquid and carry out electrophoretic process, are negative electrode with the metal structure, and inert metal is an anode, makes flexible polymer film;
The component of described ability cathode electrophoresis liquid and content thereof are: epoxy polyester type cathode electrodip painting, mass concentration are 30%;
Described electrophoretic process is meant: adopt dc source, apply 70V voltage, behind the energising 60s, the polymer in the electrophoresis liquid is adsorbed onto the conductive metal structure surface under the function of current, form patterned flexible polymer film;
The thickness of described flexible polymer film is 10 μ m;
Step 5, the metal structure that the surface is had a flexible polymer film place baking oven to carry out primary solidification and handle, remove photoresist mask layer then, obtain the flexible polymer film cantilever beam structures, the substrate that will have the flexible nano thin-film cantilever beam at last places baking oven to carry out regelate once more and handles, obtain the cured polymer cantilever beam structures.
Described primary solidification is handled and is meant: baking oven is arranged under 120 ℃ the environment and is cured 20min;
Described regelate is handled and is meant: baking oven is arranged under 200 ℃ the environment and is cured 30min.
Embodiment 2: metal/polymer composite cantilever preparation method
Present embodiment comprises the steps:
Step 1, ready substrate cleaned up after, sputter tack coat and Seed Layer successively in substrate;
The concrete operations parameter of described sputter is: base vacuum 2 * 10
-4Pa; Operating pressure: 8 * 10
-1Pa, power 600W, time 30min;
Described tack coat is Cr, is its thickness 600?
Described Seed Layer is Cu, is its thickness 800?
Step 2, by getting rid of photoresist and with pedestal mask version photolithography patterning, then by having stayed patterned Seed Layer after the development treatment;
Described concrete operations parameter of getting rid of photoresist is: 1000rpm/min;
Described photoresist thickness is 30 μ m.
Step 3, handle, make metal base at the enterprising electroplating of Seed Layer;
The concrete operations parameter of described electroplating processes is: current density 10mA/cm
2, time 60min;
The thickness of described metal base is 30 μ m, is made by Ni.
Step 4, on pedestal sputter tack coat and Seed Layer successively again;
The concrete operations parameter of described sputter is: base vacuum 2 * 10
-4Pa; Operating pressure: 8 * 10
-1Pa, power 600W, time 30min;
Described tack coat is Cr, is its thickness 600?
Described Seed Layer is Cu, is its thickness 800?
Step 5, by getting rid of photoresist and with beams of metal mask version photolithography patterning, then by having stayed patterned Seed Layer after the development treatment;
Described concrete operations parameter of getting rid of photoresist is: 3000rpm/min;
Described photoresist thickness is 10 μ m.
Step 5, handle, make the metal cantilever beam at the enterprising electroplating of second layer Seed Layer;
The concrete operations parameter of described electroplating processes is: current density 10mA/cm
2, time 25min;
The thickness of described metal base is 5 μ m, is made by Ni;
Step 6, the substrate that will have beams of metal and inert metal immerse in the ability cathode electrophoresis liquid and carry out electrophoretic process, are negative electrode with the metal cantilever beam, and inert metal is an anode, makes the flexible cantilever beam thin polymer film;
The component of described ability cathode electrophoresis liquid and content thereof are: acrylic type cathode electrodip painting, mass concentration are 10%;
Described electrophoretic process is meant: adopt dc source, apply 50V voltage, behind the energising 30s, the polymer in the electrophoresis liquid is adsorbed onto metal cantilever beam surface under the function of current, forms the flexible polymer cantilever beam structures;
The thickness of described flexible polymer film is 5 μ m;
Step 7, the composite cantilever structure that will have a flexible polymer cantilever beam film place baking oven to carry out primary solidification and handle, remove photoresist mask layer then, obtain the composite cantilever structure of metal and flexible polymer film, the substrate that will have flexible polymer cantilever beam film at last places baking oven to carry out regelate once more and handles the metal/polymer composite cantilever membrane structure after obtaining solidifying.
Described primary solidification is handled and is meant: baking oven is arranged under 120 ℃ the environment and is cured 40min;
Described regelate is handled and is meant: baking oven is arranged under 200 ℃ the environment and is cured 20min.
Claims (7)
1. the graphically preparation method of thin polymer film who is used for the MEMS field is characterized in that, may further comprise the steps:
Step 1, on clean substrate or any patterned structures sputter tack coat and metal seed layer successively;
Step 2, by getting rid of photoresist and photolithography patterning, then by having stayed patterned metal seed layer after the development treatment;
Step 3, the substrate that will have metal seed layer and inert metal immerse in the ability cathode electrophoresis liquid and carry out electrophoretic process, are negative electrode with the metal seed layer, and inert metal is an anode, makes flexible polymer film;
Step 4, the substrate that will have a flexible polymer film place baking oven to carry out primary solidification and handle, remove photoresist mask layer then, the substrate that will have flexible polymer film at last places baking oven to carry out regelate once more and handles, obtain the cured polymer membrane structure.
2. the graphically preparation method of thin polymer film who is used for the MEMS field according to claim 1 is characterized in that described tack coat of sputter successively and Seed Layer are meant: it is 2 * 10 that base vacuum pressure is set
-4Pa, operating pressure are 8 * 10
-1Pa, sputtering power 600W and sputtering time 30～60min, successively sputter Cr as tack coat, Cu as metal seed layer.
3. the graphically preparation method of thin polymer film who is used for the MEMS field according to claim 1 is characterized in that described ability cathode electrophoresis liquid is meant that mass percent concentration is 10%～70% cathode electrodip painting.
4. the graphically preparation method of thin polymer film who is used for the MEMS field according to claim 4 is characterized in that described cathode electrodip painting comprises: epoxy polyester type, acrylic type and pure polyester-type.
5. the graphically preparation method of thin polymer film who is used for the MEMS field according to claim 1, it is characterized in that, described electrophoretic process is meant: adopt dc source, apply 50～100V voltage, behind energising 15～60s, the polymer in the electrophoresis liquid is adsorbed onto the conductive substrates surface and forms flexible polymer film under the function of current.
6. the graphically preparation method of thin polymer film who is used for the MEMS field according to claim 1 is characterized in that, described primary solidification is handled and is meant: baking oven is arranged under 120 ℃ the environment and is cured 20～40min.
7. the graphically preparation method of thin polymer film who is used for the MEMS field according to claim 1 is characterized in that, described regelate is handled and is meant: baking oven is arranged under 200 ℃ the environment and is cured 20～40min.
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| CN2009103091529A CN101693515B (en) | 2009-10-30 | 2009-10-30 | Preparation method of patternable thin polymer film in MEMS field |
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| CN2009103091529A CN101693515B (en) | 2009-10-30 | 2009-10-30 | Preparation method of patternable thin polymer film in MEMS field |
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| CN101693515B CN101693515B (en) | 2012-04-25 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103043599A (en) * | 2012-12-07 | 2013-04-17 | 北京大学 | Preparation method of flexible polymer substrate-based spiral inductor |
| CN105259733A (en) * | 2015-10-30 | 2016-01-20 | 上海交通大学 | Preparation method for flexible mask plate used for patterning curved surface |
| CN105578738A (en) * | 2015-12-21 | 2016-05-11 | 上海交通大学 | Elastic substrate-based stretchable circuit board preparation method and stretchable circuit board |
| CN105743191A (en) * | 2016-03-24 | 2016-07-06 | 上海交通大学 | MEMS-micromachined planar coil-based wireless charging device and preparation method thereof |
| WO2017024444A1 (en) * | 2015-08-07 | 2017-02-16 | Hewlett-Packard Development Company, L.P. | Coating conductive components |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4592816A (en) * | 1984-09-26 | 1986-06-03 | Rohm And Haas Company | Electrophoretic deposition process |
| US6875318B1 (en) * | 2000-04-11 | 2005-04-05 | Metalbond Technologies, Llc | Method for leveling and coating a substrate and an article formed thereby |
-
2009
- 2009-10-30 CN CN2009103091529A patent/CN101693515B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103043599A (en) * | 2012-12-07 | 2013-04-17 | 北京大学 | Preparation method of flexible polymer substrate-based spiral inductor |
| CN103043599B (en) * | 2012-12-07 | 2015-10-28 | 北京大学 | A kind of preparation method of the spiral inductance based on flexible polymer substrate |
| WO2017024444A1 (en) * | 2015-08-07 | 2017-02-16 | Hewlett-Packard Development Company, L.P. | Coating conductive components |
| CN105259733A (en) * | 2015-10-30 | 2016-01-20 | 上海交通大学 | Preparation method for flexible mask plate used for patterning curved surface |
| CN105578738A (en) * | 2015-12-21 | 2016-05-11 | 上海交通大学 | Elastic substrate-based stretchable circuit board preparation method and stretchable circuit board |
| CN105578738B (en) * | 2015-12-21 | 2019-01-25 | 上海交通大学 | The preparation method of stretchable circuit board based on elastic substrate and stretchable circuit board |
| CN105743191A (en) * | 2016-03-24 | 2016-07-06 | 上海交通大学 | MEMS-micromachined planar coil-based wireless charging device and preparation method thereof |
| CN105743191B (en) * | 2016-03-24 | 2018-12-18 | 上海交通大学 | Wireless charging device and preparation method thereof based on MEMS micro Process planar coil |
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| Publication number | Publication date |
|---|---|
| CN101693515B (en) | 2012-04-25 |
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