CN101650394A - Electrostatic discharge detection device - Google Patents
Electrostatic discharge detection device Download PDFInfo
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- CN101650394A CN101650394A CN200810210921A CN200810210921A CN101650394A CN 101650394 A CN101650394 A CN 101650394A CN 200810210921 A CN200810210921 A CN 200810210921A CN 200810210921 A CN200810210921 A CN 200810210921A CN 101650394 A CN101650394 A CN 101650394A
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- delay circuit
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Abstract
An electrostatic discharge detection device is used for testing an object to be tested. The electrostatic discharge detection device comprises an electrostatic generation module, an electronic discharge detection module and a display module. The electrostatic generation module is coupled with the object to be tested for providing static electricity to discharge the object to be tested, and furthercauses the object to be tested to output an electrostatic signal; the electrostatic discharge detection module is coupled with the object to be tested for receiving the electrostatic signal, and outputting the electrostatic signal after attenuation and delay; and the display module is used for indicating signal strength of the electrostatic signal. The electrostatic discharge detection device canconvert the electrostatic signal into information capable of judging electrostatic energy after attenuation and delay by various circuits, and further causes a user to be capable of accurately and quickly detecting electrostatic discharge energy distribution at low cost.
Description
Technical field
The present invention relates to a kind of pick-up unit, relate in particular to a kind of electrostatic discharge detection device.
Background technology
Comprise vacuum circuit in the early stage electronic circuit mostly, its inside itself has static discharge (Electrostatic Discharge, ESD) higher tolerance degree, but along with integrated circuit technology enters time micron epoch, therefore SIC (semiconductor integrated circuit) now is required more rigorous static discharge tolerance degree because of towards small size, high sensitivity and the development of low-work voltage level.
With regard to defining, static (Static Electricity) is the electric charge of the uneven electron production on the body surface, these unbalanced electronics can produce electric field and influence other objects outside certain distance, and the static discharge phenomenon promptly is the separation that originates from unbalanced static charge.Flow in the responsive circuit if any charge discharge, the permanent damage of scope from the data mistake to physical property of influence all might take place, the static discharge phenomenon of general moment all might take place shaking hands, contact the solder joint on a soupspoon or the printed circuit board (PCB) or the pin of part each other, thereby causes accurate microelectronic circuit to have the problem of quality deterioration or inefficacy.Occurred in general commerciality equipment if electronic device loses efficacy, and still can spend suitable cost and be repaired; If but occur on space shuttle, fly bomb emission coefficient, aircraft, the steamer, just its serious consequence is hardly imaginable.
So, electronic product is at the research and development initial stage, affirmation at static discharge is very important with the protection design, thereby when new product development, can carry out a series of electrostatic tests to this product, with transmission path and the energy distribution of clearly understanding static, more perfect static discharge Preventing Countermeasures is therefrom found out in expectation, to reduce product behind the order because of failure conditions that electrostatic problem was produced.
Please refer to Fig. 1, this figure is the structural representation of a specific embodiment of known electrostatic discharge detection device.As shown in Figure 1, electrostatic discharge detection device 11 is in order to test determinand 13, and wherein determinand 13 can be circuit paths or the semiconductor element in electronic installation, this electronic installation.Described electrostatic discharge detection device 11 includes generation of static electricity device 111, decay rod 113 and oscillograph 115.Generation of static electricity device 111 is coupled to determinand 13, comes determinand 13 is discharged in order to static to be provided, and then makes determinand 13 output electrostatic signal, and specifically, generation of static electricity device 111 can be static gun.
And electrostatic signal can be connected to decay rod 113, in order to electrostatic signal is decayed to the voltage that oscillograph 115 can bear, and the waveform when by the oscillograph 115 measurement of electrostatic rifles that are coupled to decay rod 113 determinand 13 being discharged again.
Though at present electrostatic discharge detection device on the market can carry out static discharge to determinand 13 and detects, yet there is cost costliness, bulky in this pick-up unit, and problem such as be difficult for manipulating, and then cause product is detected the inconvenience and the restriction of electrostatic test.
Summary of the invention
Because electrostatic discharge testing mainly needs action that electrostatic signal is decayed and postpones, enable the long time and judge the waveform of electrostatic signal, can understand static whereby and in researching and developing type, produce how many energy.In view of this, the present invention proposes to utilize transistor switch and RC delay circuit that electrostatic signal is isolated and delay, and transfers the information that can represent the static size to, and expectation can be judged the energy of electrostatic signal effectively.
The object of the present invention is to provide a kind of electrostatic discharge detection device, can reduce the complicated operation degree that detects static discharge.
Another object of the present invention is to provide a kind of electrostatic discharge detection device, can reduce the cost that detects electrostatic discharge apparatus.
Another purpose of the present invention is to provide a kind of electrostatic discharge detection device, can simplify and detect the required circuit of static discharge.
The present invention discloses a kind of electrostatic discharge detection device, and it is in order to the test determinand.Described electrostatic discharge detection device includes generation of static electricity module, static discharge detection module and display module.The generation of static electricity module is coupled to determinand, comes determinand is discharged in order to static to be provided, and then makes determinand output electrostatic signal; The static discharge detection module is coupled to determinand, in order to receiving electrostatic signal, and electrostatic signal is decayed and postpones export behind the total delay time; Display module is coupled to the static discharge detection module, is used for receiving the electrostatic signal that the static discharge detection module transmits, and producing drive signal, and represents the size of electrostatic signal according to the power of drive signal.
In a specific embodiment of the present invention, described static discharge detection module includes static receiving circuit and a plurality of delay circuit.The static receiving circuit is in order to receive electrostatic signal; And delay circuit is coupled to the static receiving circuit, in order to decay and delay electrostatic signal.
In described electrostatic discharge detection device, this static receiving circuit comprises first on-off element, and the collector of this first on-off element is coupled to voltage source, and the base stage of this first on-off element is coupled to this electrostatic signal.
In a specific embodiment of the present invention, described delay circuit comprise first order delay circuit, second level delay circuit ..., N level delay circuit, wherein first order delay circuit is coupled to the static receiving circuit, second level delay circuit is coupled to first order delay circuit, by that analogy, each grade delay circuit couples in regular turn in twos, each grade delay circuit can postpone the electrostatic signal special time, and wherein the special time that each grade delay circuit postponed is along with the progression of delay circuit increases and the geometric ratio increase.
In described electrostatic discharge detection device, comprise transistor and electric capacity in each delay circuit, each transistorized collector is coupled to this voltage source, the transistorized base stage of this of this first order delay circuit is coupled to the emitter of this first on-off element, when this first on-off element conducting, this voltage source charges to this electric capacity of this first order delay circuit; When this first on-off element was closed, this electric capacity of this first order delay circuit discharged to this transistor of this first order delay circuit.
In described electrostatic discharge detection device, in described a plurality of delay circuits, this transistorized base stage of this i level delay circuit is coupled to this transistorized emitter of this i-1 level delay circuit, when this transistor turns of this i-1 level delay circuit, this voltage source charges to this electric capacity of this i level delay circuit; When this transistor of this i-1 level delay circuit was closed, this electric capacity of this i level delay circuit discharged to this transistor of this i level delay circuit, wherein 2≤i≤N.
In described electrostatic discharge detection device, this display module comprises second switch element, the 3rd on-off element and at least one display element, this second switch element receives conducting after this electrostatic signal that this N level delay circuit transmits, come conducting the 3rd on-off element to produce this trigger pip, and then drive this display element.
In described electrostatic discharge detection device, this display element is one of light emitting diode (LED), Organic Light Emitting Diode (OLED), organic macromolecular LED diode (PLED) or the combination of oscillographic group.
In described electrostatic discharge detection device, this first on-off element, this second switch element, the 3rd on-off element and described transistor are the NPN bipolar transistor.
In described electrostatic discharge detection device, this NPN bipolar transistor can be replaced by PNP bipolar transistor, N type metal oxide semiconductor transistor (NMOS), P-type mos transistor (PMOS), C type metal oxide semiconductor transistor (CMOS), N type metal oxide semiconductor transistor (NMOS), H type metal oxide semiconductor transistor (HMOS), D type metal oxide semiconductor transistor (DMOS) or V-type metal oxide semiconductor transistor (VMOS).
In described electrostatic discharge detection device, this determinand is circuit paths or the semiconductor element in electronic installation, this electronic installation.
In described electrostatic discharge detection device, this special time that each delay circuit postponed is along with the progression of this delay circuit increases and the geometric ratio increase.
In described electrostatic discharge detection device, this special time that each delay circuit postponed adds the General Logistics Department and is this total delay time.
In described electrostatic discharge detection device, this display module is represented the size of this electrostatic signal in this total delay time.
By the aforementioned techniques scheme, the present invention transfers the information of decidable electrostatic energy to after can utilizing circuit at different levels electrostatic signal is decayed and to postpone again, and then allows the user can be accurately and fast and detect the energy distribution situation of static discharge cheaply.
Above general introduction and ensuing detailed description and accompanying drawing all are to reach mode, means and the effect that predetermined purpose is taked in order to further specify the present invention.And relevant other purposes of the present invention and advantage will be set forth in follow-up explanation and accompanying drawing.Right appended accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the structural representation of a specific embodiment of known electrostatic discharge detection device;
Fig. 2 is the structural representation of a specific embodiment of disclosed electrostatic discharge detection device;
Fig. 3 is the structural representation of a specific embodiment of disclosed static discharge detection module;
Fig. 4 is the circuit diagram of a specific embodiment of disclosed static discharge detection module and display module;
Fig. 5 A is synoptic diagram time delay of a specific embodiment of disclosed electrostatic signal; And
Fig. 5 B is the change in voltage synoptic diagram of a specific embodiment of disclosed electrostatic signal.
Wherein, description of reference numerals is as follows:
Known
11: electrostatic discharge detection device
13: determinand
111: the generation of static electricity device
113: the decay rod
115: oscillograph
The present invention
21: electrostatic discharge detection device
23: determinand
211: the generation of static electricity module
213: the static discharge detection module
215: display module
2131: the static receiving circuit
2133: delay circuit
DC1: first order delay circuit
DC2: second level delay circuit
DC3: third level delay circuit
DC4: fourth stage delay circuit
DC5: level V delay circuit
DCi: i level delay circuit
DCn: N level delay circuit
ES: electrostatic signal
Q: first on-off element
Vcc: voltage source
R: resistance
C1, C2, C3, C4, C5: electric capacity
Q1, Q2, Q3, Q4, Q5, Qi: transistor
Q6: second switch element
Q7: the 3rd on-off element
D1: display element
S1: trigger pip
Embodiment
After the action that the electrostatic signal of electronic device of flowing through must decay and postpone, could judge the energy distribution of static in electronic device, be with, the present invention utilizes transistor switch that electrostatic signal is isolated to reach the purpose of decay, and electrostatic signal is postponed the human observable time, and then allow the user can be accurately and fast and detect the energy distribution situation of static discharge cheaply by the RC delay circuit.
Major technique of the present invention is characterised in that the electrostatic discharge detection device that determinand is carried out static discharge, below necessary system architecture and action thereof are just only proposed, yet, being familiar with those skilled in the art learns, except following mentioned member, determinand comprises various forms certainly, therefore, and should be with not exceeding that present embodiment discloses.
At first, please refer to Fig. 2, this figure is the structural representation of the specific embodiment of disclosed electrostatic discharge detection device.As shown in Figure 2, electrostatic discharge detection device 21 is in order to test determinand 23, and wherein determinand 23 is circuit paths or the semiconductor element in electronic installation, this electronic installation.Described electrostatic discharge detection device 21 includes generation of static electricity module 211, static discharge detection module 213 and display module 215.Generation of static electricity module 211 is coupled to determinand 23, comes determinand 23 is discharged in order to static to be provided, and then makes determinand 23 output electrostatic signal.Specifically, generation of static electricity module 211 can be static gun.
Static discharge detection module 213 is coupled to determinand 23, in order to receiving electrostatic signal, and electrostatic signal is decayed and postpones export behind the total delay time.Please in the lump with reference to figure 3, this figure is the structural representation of the specific embodiment of disclosed static discharge detection module 213.As shown in Figure 3, static discharge detection module 213 includes static receiving circuit 2131 and a plurality of delay circuit 2133.Static receiving circuit 2313 is in order to receive electrostatic signal; And delay circuit 2133 is coupled to static receiving circuit 2313, in order to decay and delay electrostatic signal.Wherein, delay circuit comprise first order delay circuit DC1, second level delay circuit DC2 ..., N level delay circuit DCn, first order delay circuit DC1 is coupled to static receiving circuit 2131, second level delay circuit DC2 is coupled to first order delay circuit DC1, by that analogy, each grade delay circuit 2133 couples in regular turn in twos, causes the every delay circuit 2133 through one-level of electrostatic signal, just postpones special time.
Then, for more understanding the processing mode of the present invention to electrostatic signal, please refer to Fig. 4, this figure is the circuit diagram of the specific embodiment of disclosed static discharge detection module 213 and display module 215.Wherein Xiang Guan system architecture please also refer to Fig. 2 and Fig. 3.As shown in Figure 4, static receiving circuit 2131 comprises the first on-off element Q, and the collector of the first on-off element Q is coupled to voltage source Vcc, and base stage receives electrostatic signal ES, to control the state of this first on-off element Q-switch.
And delay circuit 2133 is the RC delay circuit of a plurality of series connection, for asking convenient explanation, here comes for example with design Pyatyi delay circuit DC1～DC5.Include transistor and electric capacity in each grade delay circuit, and each transistorized collector all is coupled to voltage source Vcc.The base stage of the transistor Q1 of first order delay circuit DC1 is coupled to the emitter of the first on-off element Q; And the base stage of the transistor Q2 of second level delay circuit DC2 is coupled to the emitter of the transistor Q1 of first order delay circuit DC1, in regular turn by that analogy, the base stage of the transistor Qi of i level delay circuit DCi is coupled to the emitter of the transistor Q (i-1) of i-1 level delay circuit DC (i-1), wherein 2≤i≤N.
When static receiving circuit 2131 receives electrostatic signal ES, the electrostatic signal ES of the moment conducting immediately first on-off element Q, therefore voltage source Vcc charges to the capacitor C 1 of first order delay circuit DC1, and turn-on transistor Q1～transistor Q5 in regular turn.When electrostatic signal ES ends, the first on-off element Q is closed, promptly the 1 couple of transistor Q1 of capacitor C by first order delay circuit DC1 discharges, and the transistor Qi after making continues to receive electric current and conducting.In to capacitor C 1 charging and discharge, 2 of the capacitor C of inferior one-level are in charged state always, and when capacitor C 1 is discharged totally, transistor Q1 is closed, promptly the 2 couples of transistor Q2 of capacitor C by second level delay circuit DC2 discharge, and the transistor Qi after same the making continues to receive electric current and conducting, so by that analogy, the ON time of the transistor Qi that progression is healed high is longer, and then elongates the time delay of electrostatic signal ES.
In the above-mentioned action, electrostatic signal ES can be reached the effect of decay by isolation when flowing through the first on-off element Q, every afterwards through a transistor, also carries out decay action to a certain degree; Again, in the delay circuit 2133, each grade delay circuit can postpone electrostatic signal ES special time according to each transistorized ON time, and the transistorized ON time in each grade delay circuit depends on the electric capacity in the upper level delay circuit, if electrostatic signal ES is bigger, then the upper level delay circuit duration of charging is more grown, and makes that the transistorized ON time of next stage delay circuit is longer, and vice versa.Wherein the special time that postponed of each grade delay circuit adds the General Logistics Department and is total delay time, specifically, is example with Fig. 4, supposes that the time of transistor Q1 conducting is T1, and it is the summation of 1 duration of charging of capacitor C and 1 discharge time of capacitor C; And the time of transistor Q2 conducting is T2, it is the summation of 2 duration of charging of capacitor C and 2 discharge times of capacitor C, wherein the duration of charging of capacitor C 2 is the time T 1 of transistor Q1 conducting, is the time T 1 and the capacitor C summation of 2 discharge times of transistor Q1 conducting so the time of transistor Q2 conducting is T2; Incremental delay by that analogy, total delay time is the time T 5 of the transistor Q5 conducting of level V delay circuit, the time T 4 of transistor Q4 conducting just and the capacitor C summation of 5 discharge times.Therefore, electrostatic signal ES can reach the effect of decay and delay after handling by foregoing circuit.
And display module 215 comprises second switch element Q6, the 3rd on-off element Q7 and at least one display element D1.The base stage of second switch element Q6 is coupled to the emitter of the transistor Q5 of level V delay circuit DC5, in order to conducting behind the electrostatic signal ES after 2133 processing of receive delay circuit, and then make voltage source Vcc provide electric current generation trigger pip S1 to come conducting the 3rd on-off element Q7.The end of display element D1 is coupled to voltage source Vcc, the other end is coupled to the collector of the 3rd on-off element Q7, and in the specific embodiment, display element D1 is light emitting diode (LED), when the 3rd on-off element Q7 conducting, it is luminous that voltage source Vcc provides driving voltage to drive display element D1.Wherein, the length of the luminous total delay time of display element D1 is represented the size of electrostatic signal ES, and this electrostatic signal ES is stronger, and its trigger pip S1 duration is also longer, and then makes display element D1 luminous of a specified duration more, and vice versa.
In a specific embodiment of the present invention, display element is also optional from one of Organic Light Emitting Diode (OLED), organic macromolecular LED diode (PLED) or the combination of oscillographic group, observes the waveform of electrostatic signal ES by oscillograph and judges its power; And the first above-mentioned on-off element Q, second switch element Q6, the 3rd on-off element Q7 and transistor Q1～Q5 are the NPN bipolar transistor, wherein this NPN bipolar transistor can be replaced design by the PNP bipolar transistor by easy circuit, N type metal oxide semiconductor transistor (NMOS), P-type mos transistor (PMOS), C type metal oxide semiconductor transistor (CMOS), N type metal oxide semiconductor transistor (NMOS), H type metal oxide semiconductor transistor (HMOS), D type metal oxide semiconductor transistor (DMOS) or V-type metal oxide semiconductor transistor (VMOS) replace, should be with not exceeding that present embodiment discloses.
At last, please refer to Fig. 5 A, Fig. 5 B, these figure are the time delay and the change in voltage synoptic diagram of a specific embodiment of disclosed electrostatic signal.As shown in Fig. 5 A, the special time that each grade delay circuit postponed increases along with the progression of delay circuit and geometric ratio increases, and therefore the waveform that makes electrostatic signal ES is along with delay circuits at different levels, and slowly is deferred to the signal that human eye can identification.And for example shown in Fig. 5 B, the voltage swing of electrostatic signal ES also progressively decays to human exercisable voltage because of the on-off element and the transistor of circuit at different levels in the static discharge detection module 213, to avoid excessive moment static display element D1 is burnt out.
Describe in detail by above example, when knowing electrostatic discharge detection device of the present invention, utilize Simple Transistor switch and RC delay circuit, the effect that the electrostatic signal of moment is decayed and postpones, relend the energy power that demonstrates the electrostatic signal after the processing by display element, by above-mentioned technological means, design of the present invention replaces the expensive detecting instrument of tradition, also reduced the operating performance that detects static discharge, and then allow the user can be accurate, detect the energy distribution situation of static discharge fast and cheaply, the static prevention methods when can correctly grasp new product development according to the data that detects.
But; the above; only be the detailed description and the accompanying drawing of specific embodiments of the invention; be not in order to restriction the present invention; all scopes of the present invention should be as the criterion with the protection domain of described claim; any those skilled in the art are in the field of the invention, and the variation that can expect easily or revise all can be encompassed in the claim that appended the present invention defines.
Claims (14)
1. electrostatic discharge detection device is characterized in that this electrostatic discharge detection device includes in order to the test determinand:
The generation of static electricity module is coupled to this determinand, comes this determinand is discharged in order to static to be provided, and then makes this determinand output electrostatic signal;
The static discharge detection module is coupled to this determinand, in order to receiving this electrostatic signal, and this electrostatic signal is decayed and postpones export behind the total delay time; And
Display module is coupled to this static discharge detection module, is used for receiving this electrostatic signal that this static discharge detection module transmits, and producing drive signal, and represents the size of this electrostatic signal according to the power of this drive signal.
2. electrostatic discharge detection device as claimed in claim 1 is characterized in that this static discharge detection module includes:
The static receiving circuit is in order to receive this electrostatic signal; And
A plurality of delay circuits are coupled to this static receiving circuit, in order to decay and to postpone this electrostatic signal.
3. electrostatic discharge detection device as claimed in claim 2 is characterized in that this static receiving circuit comprises first on-off element, and the collector of this first on-off element is coupled to voltage source, and the base stage of this first on-off element is coupled to this electrostatic signal.
4. electrostatic discharge detection device as claimed in claim 3, it is characterized in that the first order delay circuit in described a plurality of delay circuit is coupled to this static receiving circuit, second level delay circuit is coupled to this first order delay circuit, and afterwards each grade delay circuit couples in regular turn in twos, and each delay circuit can postpone this electrostatic signal special time.
5. electrostatic discharge detection device as claimed in claim 4, it is characterized in that comprising in each delay circuit transistor and electric capacity, each transistorized collector is coupled to this voltage source, the transistorized base stage of this of this first order delay circuit is coupled to the emitter of this first on-off element, when this first on-off element conducting, this voltage source charges to this electric capacity of this first order delay circuit; When this first on-off element was closed, this electric capacity of this first order delay circuit discharged to this transistor of this first order delay circuit.
6. electrostatic discharge detection device as claimed in claim 5, it is characterized in that in described a plurality of delay circuit, this transistorized base stage of this i level delay circuit is coupled to this transistorized emitter of this i-1 level delay circuit, when this transistor turns of this i-1 level delay circuit, this voltage source charges to this electric capacity of this i level delay circuit; When this transistor of this i-1 level delay circuit was closed, this electric capacity of this i level delay circuit discharged to this transistor of this i level delay circuit, wherein 2≤i≤N.
7. electrostatic discharge detection device as claimed in claim 6, it is characterized in that this display module comprises second switch element, the 3rd on-off element and at least one display element, this second switch element receives conducting after this electrostatic signal that this N level delay circuit transmits, come conducting the 3rd on-off element to produce this trigger pip, and then drive this display element.
8. electrostatic discharge detection device as claimed in claim 7 is characterized in that this display element is one of light emitting diode, Organic Light Emitting Diode, organic macromolecular LED diode or the combination of oscillographic group.
9. electrostatic discharge detection device as claimed in claim 7 is characterized in that this first on-off element, this second switch element, the 3rd on-off element and described transistor are the NPN bipolar transistor.
10. electrostatic discharge detection device as claimed in claim 9 is characterized in that this NPN bipolar transistor can be replaced by PNP bipolar transistor, N type metal oxide semiconductor transistor, P-type mos transistor, C type metal oxide semiconductor transistor, N type metal oxide semiconductor transistor, H type metal oxide semiconductor transistor, D type metal oxide semiconductor transistor or V-type metal oxide semiconductor transistor.
11. electrostatic discharge detection device as claimed in claim 1 is characterized in that this determinand is circuit paths or the semiconductor element in electronic installation, this electronic installation.
12. electrostatic discharge detection device as claimed in claim 4 is characterized in that this special time geometric ratio increase along with the progression increase of this delay circuit that each delay circuit postpones.
13. electrostatic discharge detection device as claimed in claim 12 is characterized in that this special time that each delay circuit postpones adds the General Logistics Department and is this total delay time.
14. electrostatic discharge detection device as claimed in claim 1 is characterized in that this display module represents the size of this electrostatic signal in this total delay time.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102109215A CN101650394B (en) | 2008-08-12 | 2008-08-12 | Electrostatic discharge detection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102109215A CN101650394B (en) | 2008-08-12 | 2008-08-12 | Electrostatic discharge detection device |
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| CN101650394A true CN101650394A (en) | 2010-02-17 |
| CN101650394B CN101650394B (en) | 2012-03-07 |
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| CN2008102109215A Expired - Fee Related CN101650394B (en) | 2008-08-12 | 2008-08-12 | Electrostatic discharge detection device |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262202A (en) * | 2010-05-25 | 2011-11-30 | 上海政申信息科技有限公司 | Electrostatic discharge signal processing method, processing apparatus thereof and electrostatic discharge detector |
| CN102539937A (en) * | 2012-02-22 | 2012-07-04 | 苏州泰思特电子科技有限公司 | Static detection platform for non-earthing equipment with nonmetallic shell |
| CN104204827A (en) * | 2012-04-04 | 2014-12-10 | 夏普株式会社 | Esd test inspection device and esd test inspection method |
| CN104254783A (en) * | 2012-04-26 | 2014-12-31 | 3M创新有限公司 | An electrostatic discharge event detector |
| CN105916281A (en) * | 2016-07-04 | 2016-08-31 | 安徽省宁国市天宇电器有限公司 | Anti-static device for intelligent sanitary ware |
| CN106680635A (en) * | 2017-01-03 | 2017-05-17 | 京东方科技集团股份有限公司 | Touch screen test system and touch screen test method |
| CN107179456A (en) * | 2017-05-03 | 2017-09-19 | 深圳天珑无线科技有限公司 | Electro-static discharge test device and static discharge test method |
| CN107238769A (en) * | 2017-05-31 | 2017-10-10 | 晶晨半导体(上海)股份有限公司 | A kind of method of the Electro-static Driven Comb ability of analysis chip cabling |
| CN109342837A (en) * | 2018-10-31 | 2019-02-15 | 许继集团有限公司 | A kind of electrostatic measurement Circuits and Systems |
| CN109655520A (en) * | 2019-01-29 | 2019-04-19 | 中煤科工集团重庆研究院有限公司 | Device and method for testing electrostatic safety performance of mining nonmetal material |
| CN110231519A (en) * | 2019-06-18 | 2019-09-13 | 国网河南省电力公司辉县市供电公司 | A kind of electrostatic detection cancellation element |
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2008
- 2008-08-12 CN CN2008102109215A patent/CN101650394B/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262202A (en) * | 2010-05-25 | 2011-11-30 | 上海政申信息科技有限公司 | Electrostatic discharge signal processing method, processing apparatus thereof and electrostatic discharge detector |
| CN102262202B (en) * | 2010-05-25 | 2013-05-29 | 上海政申信息科技有限公司 | Electrostatic discharge signal processing method, processing apparatus thereof and electrostatic discharge detector |
| CN102539937A (en) * | 2012-02-22 | 2012-07-04 | 苏州泰思特电子科技有限公司 | Static detection platform for non-earthing equipment with nonmetallic shell |
| CN104204827A (en) * | 2012-04-04 | 2014-12-10 | 夏普株式会社 | Esd test inspection device and esd test inspection method |
| CN104254783A (en) * | 2012-04-26 | 2014-12-31 | 3M创新有限公司 | An electrostatic discharge event detector |
| CN105916281A (en) * | 2016-07-04 | 2016-08-31 | 安徽省宁国市天宇电器有限公司 | Anti-static device for intelligent sanitary ware |
| CN106680635A (en) * | 2017-01-03 | 2017-05-17 | 京东方科技集团股份有限公司 | Touch screen test system and touch screen test method |
| CN106680635B (en) * | 2017-01-03 | 2019-08-16 | 京东方科技集团股份有限公司 | Testing touch screen system and testing touch screen method |
| CN107179456A (en) * | 2017-05-03 | 2017-09-19 | 深圳天珑无线科技有限公司 | Electro-static discharge test device and static discharge test method |
| CN107238769A (en) * | 2017-05-31 | 2017-10-10 | 晶晨半导体(上海)股份有限公司 | A kind of method of the Electro-static Driven Comb ability of analysis chip cabling |
| CN109342837A (en) * | 2018-10-31 | 2019-02-15 | 许继集团有限公司 | A kind of electrostatic measurement Circuits and Systems |
| CN109655520A (en) * | 2019-01-29 | 2019-04-19 | 中煤科工集团重庆研究院有限公司 | Device and method for testing electrostatic safety performance of mining nonmetal material |
| CN109655520B (en) * | 2019-01-29 | 2021-09-28 | 重庆安标检测研究院有限公司 | Device and method for testing electrostatic safety performance of mining nonmetal material |
| CN110231519A (en) * | 2019-06-18 | 2019-09-13 | 国网河南省电力公司辉县市供电公司 | A kind of electrostatic detection cancellation element |
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| Publication number | Publication date |
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| CN101650394B (en) | 2012-03-07 |
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