CN101638557A - Chemi-mechanical polishing liquid - Google Patents
Chemi-mechanical polishing liquid Download PDFInfo
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- CN101638557A CN101638557A CN200810041287A CN200810041287A CN101638557A CN 101638557 A CN101638557 A CN 101638557A CN 200810041287 A CN200810041287 A CN 200810041287A CN 200810041287 A CN200810041287 A CN 200810041287A CN 101638557 A CN101638557 A CN 101638557A
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- polishing liquid
- mechanical polishing
- chemical mechanical
- polishing
- dioxide
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- 238000005498 polishing Methods 0.000 title claims abstract description 134
- 239000007788 liquid Substances 0.000 title claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 106
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 54
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 49
- 239000000126 substance Substances 0.000 claims abstract description 26
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229960001866 silicon dioxide Drugs 0.000 claims description 46
- 239000013543 active substance Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- -1 phospho Chemical class 0.000 claims description 7
- 239000000084 colloidal system Substances 0.000 claims description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- 239000002280 amphoteric surfactant Substances 0.000 claims description 4
- CCVYRRGZDBSHFU-UHFFFAOYSA-N (2-hydroxyphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1O CCVYRRGZDBSHFU-UHFFFAOYSA-N 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- MRUAUOIMASANKQ-UHFFFAOYSA-N cocamidopropyl betaine Chemical compound CCCCCCCCCCCC(=O)NCCC[N+](C)(C)CC([O-])=O MRUAUOIMASANKQ-UHFFFAOYSA-N 0.000 claims description 3
- 229940073507 cocamidopropyl betaine Drugs 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- 235000019864 coconut oil Nutrition 0.000 claims description 2
- 239000003240 coconut oil Substances 0.000 claims description 2
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 2
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 claims description 2
- 239000000194 fatty acid Substances 0.000 claims description 2
- 229930195729 fatty acid Natural products 0.000 claims description 2
- 150000004665 fatty acids Chemical class 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 229940095064 tartrate Drugs 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 239000003082 abrasive agent Substances 0.000 abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 239000004094 surface-active agent Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract 2
- 239000012530 fluid Substances 0.000 description 44
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 24
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 18
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses chemi-mechanical polishing liquid, which comprises a sol type silicon dioxide, a velocity accelerating auxiliary agent, a surfactant and water. The invention discloses chemi-mechanical polishing liquid which overcomes the defects of high polishing liquid abrasive material content and high polishing surface defect of the prior chemi-mechanical polishing liquid applied to a polishing oxide dielectric substance and has the advantages of low polishing liquid abrasive material content, high silicon dioxide removing velocity and low silicon nitride polishing velocity.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
In the manufacturing processed of unicircuit, often made up thousands of structural unit on the Silicon Wafer substrate, these structural units further form functional circuit and components and parts by the multiple layer metal interconnection.In multilevel metal interconnection structure, fill the silicon-dioxide of silicon-dioxide or other elements that mix between the plain conductor as interlayer dielectric (ILD).Along with the development of unicircuit metal interconnect technology and the increase of the wiring number of plies, chemically machinery polished (CMP) has been widely used in the flattening surface in the chip manufacturing proces.The chip surface of these planarizations helps the production of multilevel integration, and prevents from dielectric layer is coated in the distortion that causes on the plane surface not.
CMP technology just is to use a kind of mixture and polishing pad polishing integrated circuit surface that contains abrasive material.In typical cmp method, substrate is directly contacted with rotating polishing pad, exert pressure at substrate back with a loads.During polishing, pad and operator's console rotation, the power that keeps down at substrate back is applied to abrasive material and chemically reactive solution (being commonly referred to polishing fluid or polishing slurries) on the pad simultaneously, and this polishing fluid begins to carry out polishing process with the film generation chemical reaction that is polishing.
In the oxide cmp process, polishing slurries is mainly used in removes oxide dielectric matter.When shallow groove isolation layer polished, polishing fluid is mainly used in to be removed and planarization oxide dielectric matter and silicon nitride.In oxide compound and shallow groove isolation layer glossing, the oxide dielectric matter of all having relatively high expectations is removed speed and lower surface imperfection.When oxide dielectric matter was polished, it was higher always to expect that silicon-dioxide is removed speed, and the polishing speed of other materials is lower.
Oxide dielectric matter comprises film thermooxidizing silicon-dioxide (thin thermal oxide), high-density plasma silicon-dioxide (high density plasma oxide), boron phosphatization silex glass (borophosphosilicateglass), tetraethoxy silicon-dioxide (PETEOS) and carbon-doped silicon oxide (carbon doped oxide) etc.
The polish abrasive that is used for oxide dielectric matter polishing slurries is mainly aerosil, cerium dioxide and colloidal sol type silicon-dioxide, but preceding two kinds of abrasive materials easy scratch surface in polishing process.Compare with preceding two kinds of abrasive materials, the surface imperfection that colloidal sol type silicon-dioxide produces in polishing process is less, but lower to the removal speed of oxide dielectric matter, the consumption of abrasive material is often higher in its polishing fluid, and the pH value is also higher.
U.S. Pat 5,891,205 have described a kind of oxide cmp liquid that contains cerium dioxide and silicon-dioxide compound abrasive.Patent US6 has disclosed the colloid silica polishing fluid of a kind of silicon-dioxide and silicon nitride high selectivity in 964,600, and silicon dioxide colloid particle by 5～50% and 0.001～2.0 sulfonate or sulphonate constitute.Patent US7,351,662 adopt the removal speed of hydrocarbonate promotes oxidn thing dielectric substance (silicon-dioxide or carbon-doped silicon oxide), thereby obtain lower surface imperfection.
Summary of the invention
Technical problem to be solved by this invention is to overcome existing be used for polishing the chemical mechanical polishing liquid polishing fluid abrasive material content height of oxide dielectric matter, the defective that the glazed surface defective is high, the speed that provides a kind of and contain silica sol particles, contained carboxyl increases the chemical mechanical polishing liquid of auxiliary agent and tensio-active agent, and a kind of polishing fluid abrasive material content is low, silicon-dioxide is removed speed height, silicon nitride (Si thereby provide
3N
4) chemical mechanical polishing liquid that polishing speed is low.
Chemical mechanical polishing liquid of the present invention contains colloidal sol type silicon-dioxide, speed increases auxiliary agent, tensio-active agent and water.
Colloidal sol type silicon-dioxide described in the present invention is monodispersed silicon dioxide colloid particulate water solution system, and that its particle diameter is preferable is 30～120nm.What the consumption of colloidal sol type silicon-dioxide was preferable is 10～20%, and better is 15～20%.What silicon dioxide colloid particulate concentration was preferable in the described colloidal sol type silicon-dioxide is 20～50%, and better is 30%; Per-cent is mass percent.
Speed increases the material that auxiliary agent refers to increase the silicon-dioxide polishing speed, and preferable is organic carboxyl acid and salt thereof, and in organic phospho acid and the salt thereof one or more; Better for carbon atom number be 2～8 polycarboxylic acid and in salt and monobasic organic phospho acid and the salt thereof one or more thereof; One or more that best is in soluble tartrate, ethylenediamine tetraacetic acid (EDTA), nitrilotriacetic acid(NTA), iminodiethanoic acid and the 2-HPAA (HPAA).Described speed increase auxiliary dosage preferable be 0.05～4%; Better is 0.5～2%; Per-cent is mass percent.
What tensio-active agent was preferable is non-ionic type and/or amphoteric surfactant, one or more that better is in lauroyl propyl group amine oxide, dimethyl dodecyl amine oxide (OA-12), cocamidopropyl betaine (CAB-30), polysorbas20 (Tween 20), Varion CDG-K (BS-12), AMONYL 380LC (CAB-35) and the fatty acid distribution of coconut oil diglycollic amide (6501).What described dosage of surfactant was preferable is smaller or equal to 0.2%, but does not comprise 0%, and better is 0.005～0.05%; Per-cent is mass percent.
When using non-ionic type or amphoteric surfactant,, can access different polysilicons and remove speed, thereby realize regulating the purpose that polysilicon is removed speed by the kind of adjustment sheet surface-active agent.As, Varion CDG-K is very big to removal rate of polysilicon, and the polysilicon of AMONYL 380LC removal speed is low, uses this two kinds of tensio-active agents simultaneously, and the polysilicon that obtains is removed between the removal speed of speed when independent the use.
What water was preferable is deionized water, and water is supplied surplus.
According to the technology actual needs, can in polishing fluid of the present invention, add the conventional complementary reagent that adds in this area, as viscosity modifier, alcohols or ethers reagent, colloidal sol type silicon-dioxide stablizer, sterilant etc.
What the pH value of polishing fluid of the present invention was preferable is 9～12, and better is 10.5～12.
Polishing fluid of the present invention is by the simple uniform mixing of mentioned component, and adopting the pH regulator agent to be adjusted to suitable pH value afterwards can make.The pH regulator agent can be selected the conventional pH regulator agent in this area for use, as potassium hydroxide and ammoniacal liquor etc.
All commercially available the getting of reagent that the present invention is used.
Positive progressive effect of the present invention is:
1, polishing fluid of the present invention has higher polishing speed to oxide dielectric matter, and other materials (as polysilicon and silicon nitride) is had low polishing speed, makes polishing fluid of the present invention have good selection ratio, selects than being 2: 1～10: 1.
2, introduce speed among the present invention and increase auxiliary agent, obtained higher silicon-dioxide and removed speed, thereby reduced the usage quantity of abrasive material in the polishing fluid, thereby reduced cost.
3, use non-ionic type and amphoteric surfactant in the preferred embodiment of the invention, can access different polysilicons and remove speed, thereby realized regulating the purpose that polysilicon is removed speed.
Description of drawings
Fig. 1 removes rate diagram for the TEOS that different TEOS speed increase auxiliary agent.
Fig. 2 increases the TEOS removal rate diagram of auxiliary agent for the TEOS speed of different amounts.
Fig. 3 is that the TEOS and the Ploy of the silicon-dioxide of different-grain diameter removes rate diagram.
Fig. 4 is that the TEOS of the silicon-dioxide of different amounts removes rate diagram.
Fig. 5 is the polishing speed figure of the polishing fluid of different pH values.
Fig. 6 is TEOS, the Si of different surfaces promoting agent
3N
4Removal rate diagram with Poly.
Fig. 7 is the TEOS of tensio-active agent of different amounts and the removal rate diagram of Poly.
Embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.
Hundred kill to such an extent that biochemical company limiteds are won in Shanghai three
Embodiment 1 adds speed and increases auxiliary agent is removed speed to TEOS influence
With polishing fluid 1～5 and contrast polishing fluid 1 polishing silicon dioxide, measure the removal speed of silicon-dioxide, as Fig. 1.As seen from the figure, compare, introduce speed and increase polishing fluid behind the auxiliary agent polishing speed of TEOS is obviously increased with not adding the contrast 1 that speed increases auxiliary agent.
The polishing fluid prescription sees Table 1, regulates pH with KOH, and deionized water is supplied surplus.Polishing condition is: overdraft 4.0psi, polishing pad IC1000, polishing disk rotating speed 70rpm, polishing fluid flow velocity 100ml/min, polishing machine platform Logitec PM5.
Table 1
With polishing fluid 1,6～9 and contrast polishing fluid 1 polishing silicon dioxide, measure the removal speed of silicon-dioxide, as Fig. 2.As seen from the figure, the polishing fluid polishing speed increases with the increase that increases auxiliary dosage, reaches capacity about 3%.
The polishing fluid prescription sees Table 2, regulates pH with KOH, and deionized water is supplied surplus.Polishing condition is: overdraft 5.0psi, polishing pad IC1000, polishing disk rotating speed 70rpm, polishing fluid flow velocity 100ml/min, polishing machine platform Logitec PM5.
Table 2
The particle diameter of embodiment 3 silicon-dioxide is removed the influence of speed to TEOS and Poly
With polishing fluid 10～12 polishing silicon dioxides and Poly, measure the removal speed of silicon-dioxide and polysilicon (Poly), as Fig. 3.As seen from the figure, the silicon-dioxide particle diameter does not have much affect to polishing speed, can select the silicon-dioxide particle size range of broad.
The polishing fluid prescription sees Table 3, regulates pH with KOH, and deionized water is supplied surplus.Polishing condition is: overdraft 4.0psi, polishing pad IC1000, polishing disk rotating speed 70rpm, polishing fluid flow velocity 100ml/min, polishing machine platform Logitec PM5.
Table 3
With polishing fluid 13～15 and contrast polishing fluid 2～4 polishing silicon dioxides, measure the removal speed of silicon-dioxide, as Fig. 4.As seen from the figure, removal speed increases with the increase of silicon-dioxide consumption.
The polishing fluid prescription sees Table 4, regulates pH with KOH, and deionized water is supplied surplus.Polishing condition is: overdraft 5.0psi, polishing pad IC1000, polishing disk rotating speed 70rpm, polishing fluid flow velocity 100ml/min, polishing machine platform Logitec PM5.
Table 4
The pH value of embodiment 5 polishing fluids is to the influence of polishing speed
With polishing fluid 16～18 polishing silicon dioxides and Poly, measure its removal speed, as Fig. 5 to silicon-dioxide and Poly.As seen from the figure, high pH value helps obtaining high polishing speed, but changes not quite behind pH=11.0, and preferable is 10.5～12.
The polishing fluid prescription sees Table 5, regulates pH with KOH, and deionized water is supplied surplus.Polishing condition is: overdraft 4.0psi, polishing pad IC1000, polishing disk rotating speed 70rpm, polishing fluid flow velocity 100ml/min, polishing machine platform Logitec PM5.
Table 5
Embodiment 6 kinds of surfactants are removed the influence of speed to TEOS, SiN and Poly
With polishing fluid 19～25 polishing silicon dioxides, Si
3N
4And Poly, measure it to silicon-dioxide, Si
3N
4With the removal speed of Poly, as Fig. 6.As seen from the figure, compare with the polishing fluid 18 that does not add tensio-active agent, behind introducing nonionic and the zwitterionics, TEOS and Si
3N
4The removal rate variation little, but the polishing speed of poly significantly reduces.
The polishing fluid prescription sees Table 6, regulates pH with KOH, and deionized water is supplied surplus.Polishing condition is: overdraft 4.0psi, polishing pad IC1000, polishing disk rotating speed 70rpm, polishing fluid flow velocity 100ml/min, polishing machine platform Logitec PM5.
Table 6
Embodiment 7 dosage of surfactant are removed the influence of speed to TEOS and Poly
With polishing fluid 26～29 polishing silicon dioxides and Poly, measure its removal speed, as Fig. 7 to silicon-dioxide and Poly.As seen from the figure, introduce tensio-active agent after, TEOS removes speed and slightly reduces, but the removal speed of poly significantly reduces, but when consumption is higher than 500ppm after, removal speed does not have considerable change.
The polishing fluid prescription sees Table 7, regulates pH with KOH, and deionized water is supplied surplus.Polishing condition is: overdraft 4.0psi, polishing pad IC1000, polishing disk rotating speed 70rpm, polishing fluid flow velocity 100ml/min, polishing machine platform Logitec PM5.
Table 7
Embodiment 8
With polishing fluid 30 polishing silicon dioxides, measure its removal speed to silicon-dioxide.Polishing fluid prescription and removal speed see Table 8.
Table 8
Claims (17)
1, a kind of chemical mechanical polishing liquid, it contains colloidal sol type silicon-dioxide, speed increases auxiliary agent, tensio-active agent and water.
2, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described colloidal sol type silicon-dioxide particle diameter is 30～120nm.
3, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: it is organic carboxyl acid and salt thereof that described speed increases auxiliary agent, and in organic phospho acid and the salt thereof one or more.
4, chemical mechanical polishing liquid as claimed in claim 3 is characterized in that: it is that carbon atom number is 2～8 polycarboxylic acid and in salt and monobasic organic phospho acid and the salt thereof one or more thereof that described speed increases auxiliary agent.
5, chemical mechanical polishing liquid as claimed in claim 4 is characterized in that: it is in soluble tartrate, ethylenediamine tetraacetic acid (EDTA), nitrilotriacetic acid(NTA), iminodiethanoic acid and the 2-HPAA one or more that described speed increases auxiliary agent.
6, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described tensio-active agent is non-ionic type and/or amphoteric surfactant.
7, chemical mechanical polishing liquid as claimed in claim 6 is characterized in that: described tensio-active agent is one or more in lauroyl propyl group amine oxide, dimethyl dodecyl amine oxide, cocamidopropyl betaine, polysorbas20, Varion CDG-K, AMONYL 380LC and the fatty acid distribution of coconut oil diglycollic amide.
8, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the consumption of described colloidal sol type silicon-dioxide is 10～20%; Per-cent is mass percent.
9, chemical mechanical polishing liquid as claimed in claim 8 is characterized in that: the consumption of described colloidal sol type silicon-dioxide is 15～20%; Per-cent is mass percent.
10, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: silicon dioxide colloid particulate concentration is 20～50% in the described colloidal sol type silicon-dioxide; Per-cent is mass percent.
11, chemical mechanical polishing liquid as claimed in claim 10 is characterized in that: described silicon dioxide colloid particulate concentration is 30%; Per-cent is mass percent.
12, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the consumption that described speed increases auxiliary agent is 0.05～4%; Per-cent is mass percent.
13, chemical mechanical polishing liquid as claimed in claim 12 is characterized in that: the consumption that described speed increases auxiliary agent is 0.5～2%; Per-cent is mass percent.
14, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the consumption of described tensio-active agent does not comprise 0% for smaller or equal to 0.2%; Per-cent is mass percent.
15, chemical mechanical polishing liquid as claimed in claim 14 is characterized in that: the consumption of described tensio-active agent is 0.005～0.05%; Per-cent is mass percent.
16, chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the pH value of described chemical mechanical polishing liquid is 9～12.
17, chemical mechanical polishing liquid as claimed in claim 16 is characterized in that: described pH value is 10.5～12.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041287A CN101638557A (en) | 2008-08-01 | 2008-08-01 | Chemi-mechanical polishing liquid |
| PCT/CN2009/000863 WO2010012159A1 (en) | 2008-08-01 | 2009-08-03 | A chemical-mechanical polishing liquid |
| CN200980131111.3A CN102112566B (en) | 2008-08-01 | 2009-08-03 | Chemical-mechanical polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041287A CN101638557A (en) | 2008-08-01 | 2008-08-01 | Chemi-mechanical polishing liquid |
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| Publication Number | Publication Date |
|---|---|
| CN101638557A true CN101638557A (en) | 2010-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810041287A Pending CN101638557A (en) | 2008-08-01 | 2008-08-01 | Chemi-mechanical polishing liquid |
| CN200980131111.3A Active CN102112566B (en) | 2008-08-01 | 2009-08-03 | Chemical-mechanical polishing liquid |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980131111.3A Active CN102112566B (en) | 2008-08-01 | 2009-08-03 | Chemical-mechanical polishing liquid |
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|---|---|
| CN (2) | CN101638557A (en) |
| WO (1) | WO2010012159A1 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102241958A (en) * | 2011-04-21 | 2011-11-16 | 江苏锋泰建材科技有限公司 | Ore grinding agent |
| CN104233304A (en) * | 2014-09-22 | 2014-12-24 | 无锡贺邦金属制品有限公司 | Chemical polishing solution for stainless steel and preparation method thereof |
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN104559800A (en) * | 2014-12-30 | 2015-04-29 | 上海新安纳电子科技有限公司 | Chemical mechanical polishing solution |
| WO2016136342A1 (en) * | 2015-02-23 | 2016-09-01 | 株式会社フジミインコーポレーテッド | Polishing composition |
| CN109216157A (en) * | 2017-07-04 | 2019-01-15 | 上海新昇半导体科技有限公司 | The method of back surface of the wafer sealing |
| KR20190141132A (en) * | 2017-04-17 | 2019-12-23 | 닛산 가가쿠 가부시키가이샤 | Polishing composition comprising an amphoteric surfactant |
| CN111378366A (en) * | 2018-12-27 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN113861848A (en) * | 2021-11-08 | 2021-12-31 | 万华化学集团电子材料有限公司 | Regenerated wafer chemical mechanical polishing solution and preparation method thereof |
| CN117050661A (en) * | 2023-06-21 | 2023-11-14 | 湖北兴福电子材料股份有限公司 | Green monocrystalline silicon coarse polishing solution |
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| CN115386302B (en) * | 2022-08-23 | 2023-06-02 | 常州时创能源股份有限公司 | Additive for silicon wafer back polishing and application thereof |
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| FR2781922B1 (en) * | 1998-07-31 | 2001-11-23 | Clariant France Sa | METHOD FOR THE MECHANICAL CHEMICAL POLISHING OF A LAYER OF A COPPER-BASED MATERIAL |
| JP2003286477A (en) * | 2002-03-28 | 2003-10-10 | Sumitomo Bakelite Co Ltd | Polishing composition and polishing method |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| CN1290962C (en) * | 2004-12-22 | 2006-12-20 | 中国科学院上海微***与信息技术研究所 | Nano polishing liquid for high dielectric material strontium barium titanate chemical-mechanical polish |
| KR100662546B1 (en) * | 2005-03-07 | 2006-12-28 | 제일모직주식회사 | Composition of Slurry improving Surface Quality on Silicon Wafer And Polishing Silicon Wafer using thereof |
| CN101077961B (en) * | 2006-05-26 | 2011-11-09 | 安集微电子（上海）有限公司 | Polishing fluid for smoothing treatment of refined surface and use method thereof |
-
2008
- 2008-08-01 CN CN200810041287A patent/CN101638557A/en active Pending
-
2009
- 2009-08-03 CN CN200980131111.3A patent/CN102112566B/en active Active
- 2009-08-03 WO PCT/CN2009/000863 patent/WO2010012159A1/en active Application Filing
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| CN102241958B (en) * | 2011-04-21 | 2016-06-15 | 江苏锋泰工具有限公司 | A kind of ore grinding aid |
| CN102241958A (en) * | 2011-04-21 | 2011-11-16 | 江苏锋泰建材科技有限公司 | Ore grinding agent |
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN104371550B (en) * | 2013-08-14 | 2018-02-09 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid for being used to polish silicon materials |
| CN104233304A (en) * | 2014-09-22 | 2014-12-24 | 无锡贺邦金属制品有限公司 | Chemical polishing solution for stainless steel and preparation method thereof |
| CN104233304B (en) * | 2014-09-22 | 2017-02-08 | 李璇捷 | Chemical polishing solution for stainless steel and preparation method thereof |
| CN104559800A (en) * | 2014-12-30 | 2015-04-29 | 上海新安纳电子科技有限公司 | Chemical mechanical polishing solution |
| WO2016136342A1 (en) * | 2015-02-23 | 2016-09-01 | 株式会社フジミインコーポレーテッド | Polishing composition |
| KR102634780B1 (en) * | 2017-04-17 | 2024-02-07 | 닛산 가가쿠 가부시키가이샤 | Polishing composition containing amphoteric surfactant |
| KR20190141132A (en) * | 2017-04-17 | 2019-12-23 | 닛산 가가쿠 가부시키가이샤 | Polishing composition comprising an amphoteric surfactant |
| CN109216157A (en) * | 2017-07-04 | 2019-01-15 | 上海新昇半导体科技有限公司 | The method of back surface of the wafer sealing |
| CN111378366B (en) * | 2018-12-27 | 2022-11-18 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111378366A (en) * | 2018-12-27 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN113861848A (en) * | 2021-11-08 | 2021-12-31 | 万华化学集团电子材料有限公司 | Regenerated wafer chemical mechanical polishing solution and preparation method thereof |
| CN113861848B (en) * | 2021-11-08 | 2022-07-12 | 万华化学集团电子材料有限公司 | Regenerated wafer chemical mechanical polishing solution and preparation method thereof |
| CN117050661A (en) * | 2023-06-21 | 2023-11-14 | 湖北兴福电子材料股份有限公司 | Green monocrystalline silicon coarse polishing solution |
| CN117050661B (en) * | 2023-06-21 | 2024-05-17 | 湖北兴福电子材料股份有限公司 | Green monocrystalline silicon coarse polishing solution |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102112566B (en) | 2014-02-26 |
| CN102112566A (en) | 2011-06-29 |
| WO2010012159A1 (en) | 2010-02-04 |
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