CN101622717A - 背接触型太阳能电池 - Google Patents
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Abstract
本发明涉及一种节省成本的生产背接触型硅太阳能电池的方法和由该方法制得的电池,其中该方法包括:应用硅衬底、晶片或薄膜,该硅衬底、晶片或薄膜在背面上在交叉指型图案中以交替的P型和N型导电性进行掺杂,并且可选地在晶片前面掺杂有P型或N型层;在衬底的两面上沉积一个或多个表面钝化层;在衬底背面上的表面钝化层中产生开口;沉积金属层,该金属层覆盖整个背面并且填充表面钝化层中的开口;以及在沉积的金属层中产生开口,从而获得与在衬底背面的掺杂区域的电绝缘接触。
Description
技术领域
本发明涉及一种节省成本的制造背接触型硅太阳能电池的方法和由该方法制得的电池。
背景技术
预期在接下来的数十年中世界的石油供应逐渐耗尽。这意味着上世纪我们的主要能源在几十年内将不得不被替换,以确保目前的能量消耗和将来全球能量需求的增加。
另外,唤起了许多关注,即化石能量的使用正在将地球温室效应增加至可能会变得危险的程度。因而,目前化石燃料的消耗应该可优选由可再生的并且可维持我们的气候和环境的能源/载体来替换。
一种这样的能源是太阳光,其以比目前和任何可预知的人类能量消耗的增加大得多的能量照射地球。然而,太阳能电池电力直到现在仍太昂贵而不能与核能、热能等竞争。如果要使太阳能电池电力的巨大潜力释放出来,这就需要改变。
来自太阳能板的电力的成本为太阳能板的能量转化效率和制造成本的函数。因而,对于更便宜的太阳能电力的研究应该集中在通过节省成本的制造方法制得的高效太阳能电池。
发明内容
发明目的
本发明的主要目的在于提供一种节省成本的、高效的背接触型太阳能电池的制造方法。
本发明的另外目的在于提供一种具有高能量转化率的背接触型太阳能电池。
本发明的目的可以通过在下面的本发明的说明和/或所附的专利权利要求书中阐明的特征来实现。
本发明的说明
本发明涉及钝化层的选择以及如何获得与在钝化层下方的晶片的掺杂区域的电接触。因而,本发明可以采用任何被掺杂的硅晶片或薄膜,使得晶片可以是背接触的。这包括单晶硅、微晶硅和多晶硅的晶片或薄膜以及在晶片的背面的任何公知的和想得到的P和N掺杂区域构造。还可以是在晶片的前面上的可选的P或N掺杂层。
术语“前面”表示太阳能晶片暴露于阳光的面。术语“背面”是晶片前面的相对面,以及术语“背接触”表示所有的连接体都布置在太阳能晶片的背面上。术语“P掺杂区域”是指其中导致正电荷载流子数目增加的掺杂材料被添加到硅基体,使得在表面下方的特定距离内形成具有P型导电性的、具有表面层的晶片的区域。术语“N掺杂的区域”是指其中导致负电荷载流子(迁移电子)数目增加的掺杂材料被添加到硅基体,使得在表面下方的特定距离内形成具有N型导电性的、具有表面层的晶片的区域。
用于背接触型太阳能电池的晶片应该在其背面上具有每个类型导电性P和N中的至少一个区域,但是通常有在交叉指型(interdigitated)图案中具有交替的导电性的几个掺杂区域。晶片还可以在P型或N型导电性中的一种的前面上具有掺杂层。前面掺杂层是可选的。
本发明可以应用任何公知的方法来掺杂或制造具有一种或另一种类型导电性的层。在太阳能电池的前表面处,可选的一种或另一种类型导电性的层可以通过由液体、固体或气体源的向内扩散来制备。交替的导电性的层的制造可以借助于利用激光掺杂使掺杂剂的同时或连续向内扩散、借助于不同的掺杂剂源的喷墨和退火或者借助于不同的掺杂剂源的丝网印刷和退火。获得交替的层的低成本方法首先在一个装配有两种掺杂剂源的设备中,通过利用喷墨印刷,在晶片上施加一种和另一种类型导电性的掺杂剂源,然后同时在提高的温度下通过向内扩散来制备掺杂剂层。
本发明可以在晶片的前面处采用任何公知的表面钝化层,并且它可以采用任何公知的形成钝化层的方法。然而,本发明涉及在晶片背面的第一钝化层的选择,以及如何获得与在第一钝化层下方的P型和N型掺杂区域的电接触。因而,如果人们在晶片的前面和背面两者上采用从本申请人的PCT申请WO2006/110048A1中得知的双钝化层结构,然后在晶片背面上的外部钝化层中形成开口,接着在晶片的整个背面上沉积金属相,退火如WO2006/110048A1中描述的钝化层并且同时获得在开口中的金属相产生与在第一钝化层下面的P型和N型掺杂区域的接触,以及最后在沉积的金属层中产生开口/空闲区域而产生与在晶片背面的每个掺杂区域的电绝缘接触,则获得特别节省成本的和高效的太阳能电池。
在WO2006/110048A1中公开的优选双钝化层结构包括厚度范围为1-150nm的第一氢化非晶硅或氢化非晶碳化硅薄膜,该薄膜沉积在硅晶片的两面上的掺杂层上,接着在晶片的两面上的非晶硅或非晶碳化硅层顶上沉积厚度范围为10-200nm的氢化氮化硅薄膜。非晶硅或碳化硅以及氮化硅膜可以通过等离子体增强型化学气相沉积(PECVD)来沉积。这两种膜可以在基本上单个或多个沉积过程中沉积。用于一个或多个钝化层的沉积的其他方法的示例包括但不限于:等离子体增强型化学气相沉积、热丝化学气相沉积、低温化学气相沉积、低压化学气相沉积或溅射。
可替选地,在前表面处,非晶硅层可以由氧化硅的薄层来替换,该氧化硅的薄层通过热氧化、溅射或等离子体增强型气相沉积来制备。
本发明可以采用任何公知的方法用于在一个或多个钝化层中产生开口。这可以包括蚀刻技术,其中化学试剂溶解太阳能晶片的至少一个表面上指定局部区域处的钝化层。可以通过喷墨印刷或丝网印刷来施加蚀刻剂,可替选地,局部化蚀刻可以通过喷墨印刷或丝网印刷化学抗蚀剂,接着将太阳能晶片完全或部分浸入蚀刻流体等而获得。化学蚀刻剂可以由下列物质组成但不限于此:稀的或浓的HF、KOH、NaOH或者包含HF、HNO3和CH3COOH的混合物。在钝化层中获得开口的替选方法可以是例如通过曝光于激光束来局部加热烧掉钝化层。
在采用WO2006/110048A1所述的优选的双钝化层的情况下,钝化层的去除可以仅适用于外部氮化硅层。下方的非晶硅层或非晶碳化硅层应该是完整的。可替选地,可以在所有钝化层中产生开口,使得随后的金属层的沉积获得与下面的晶片的掺杂区域直接接触。
金属层的沉积可以通过例如镍、银、铜和/或锡或者这些材料的任何组合的非电镀或电镀来获得。本发明不限于金属的这些选择,它可以应用提供与下面的硅衬底的良好电接触并且耐受与太阳能板在太阳能板的预期寿命期间的正常使用有关的以及与接触形成之后的随后制造步骤有关的UV光、高达约150-250℃的温度和任何其他破坏力/物理条件的任何材料。这可以包括公知的导电的塑料和/或诸如碳聚合物等的其他聚合物配方。并未给出对用于形成接触的材料的所需导电性的任何限制,因为该要求强烈地取决于要被接触的太阳能电池/板的几何形状和尺寸,并且本领域的技术人员应该了解需要哪种导电性。
在采用WO2006/110048A1所述的优选的双钝化层的情况下,非常适合的金属层为铝。铝层应该具有取决于电池尺寸和设计的大约1-50μm范围内的厚度,并且可以在约室温至约200℃的温度下通过覆盖全部第二表面的铝层的溅射或蒸发,或者通过覆盖全部第二表面的铝基金属浆的丝网印刷来沉积。在丝网印刷含铝的浆的情况下,应该理解含铝颗粒的商用的厚膜浆的利用,并且该浆可以包含或可以不包含玻璃颗粒,接着在温度<400℃处烘干任何有机溶剂。在铝层的沉积之后,接触和钝化效果的同时优化通过下列方式获得:将晶片加热至300-600℃范围内的温度,优选加热至约500℃的温度持续4分钟。进一步细节请参见WO2006/110048A1。
在晶片背面上形成与掺杂区域的电接触之后,必须将连续的金属层分成用于每个掺杂区域的电绝缘区域。这可以通过例如借助于蚀刻剂的喷墨,或者借助于化学抗蚀剂的喷墨,接着进行单面蚀刻,以特定图案去除沉积的金属层而获得。选择用于蚀刻铝的图案,使得在蚀刻后在金属层上出现两个不同的接触区域,一个接触区域用于P型掺杂区域,以及一个用于N型掺杂区域。
具体实施方式
本发明的示例
将通过能量转化效率高的背接触型太阳能电池的制造方法的优选实施例和由该创造性方法制得的太阳能电池的优选实施例的示例,描述本发明。
太阳能电池的优选实施例示于图1中。硅晶片1在前面上由P型或N型导电性的掺杂层2覆盖。在背面,硅晶片1由在交叉指型图案中具有交替的导电性的层3覆盖。在层2顶部,沉积非晶硅或氧化硅的薄层4,以及氮化硅层5沉积在层4的外部。在背面,交替的导电性的层3由非晶硅或非晶碳化硅的层6覆盖、然后由氮化硅层7覆盖,氮化硅层7具有用于层3中的每个掺杂区域的至少一个开口8。在氮化硅层7上,沉积铝层9,铝层9填充了氮化硅层7中的开口8。在退火之后,开口8中的铝在下面的非晶硅层6中产生了再结晶区域10,并且因而产生与下方的层3中的掺杂区域的电接触。然后,通过在层9中产生开口11,将铝层9分成电绝缘带。
制造优选实施例的优选方法包括:
-应用硅晶片,该硅晶片在背面上在交叉指型图案中以交替的P型和N型导电性来掺杂,并且可选地在晶片前面上掺杂有P型或N型层,
-在掺杂晶片两面上沉积非晶硅或非晶碳化硅层,接着在晶片两面上的非晶硅层上沉积一层氮化硅层,
-在晶片背面上,在氮化硅层中产生开口以暴露下面的非晶氮化硅层,
-沉积覆盖晶片整个背面的铝层,
-将晶片加热至200至700℃、可优选为300至600℃范围内的温度以获得在铝层和下面的硅晶片掺杂区域之间的电接触,以及
-在晶片背面上,在铝层中产生开口以使每个掺杂区域的接触隔离。
在这种情况下,表面钝化通过如下步骤获得:通过浸入H2SO4和H2O2的混合物、HCl、H2O2和H2O的混合物或者NH4OH、H2O2和H2O的混合物,接着在稀HF中去除氧化物,来清洗晶片(1)。然后,将晶片放入到等离子体增强型化学气相沉积腔室(PECVD腔室)中,并且通过利用SiH4作为单独的前驱气体来沉积厚度为1-150nm、优选为约10-100nm的非晶硅膜。非晶硅膜沉积在晶片的两个表面上并且分别由晶片前面和背面的附图标记4和6表示。可替选地,可以沉积碳化硅膜。然后,在PECVD腔室中,通过利用SiH4和NH3的混合物作为前驱气体来沉积氮化硅层。氮化硅膜的厚度应该为10-200nm范围内,优选为约70-100nm范围内。前驱气体还可以包含0至50mol%氢气。氮化硅膜沉积在晶片的两面上并且分别由晶片前面和背面的附图标记5和7表示。两个膜在PECVD腔室中的沉积温度为约250℃。
本发明人所做的研究表明钝化层的最好方式为在500℃下退火的10-100nm非晶硅和70-100nm氮化硅。80nm非晶硅和100nm氮化硅膜的双层根据体材料的复合时间而给出硅晶片上的有效复合寿命为0.0007s,该复合时间比非晶硅或氮化硅的单膜好约1个数量级,或者是比未退火的非晶硅和氮化硅的双层膜高2-3倍。在不受理论束缚的条件下,认为钝化效果显著增加的原因是由于氢原子向晶体硅衬底的边界区域扩散,这使晶体硅中的悬空键饱和。在约500℃下的退火温度之后,硅晶片的表面层中的氢含量的测量表明硅相包含约10原子%H。在更高和更低的温度下的退火呈现更少的氢含量。
在晶片背面的钝化层中的开口通过喷墨印刷化学蚀刻剂来获得,该化学蚀刻剂包括稀的或浓的HF、KOH、NaOH溶液,或者包括HF、HNO3和CH3COOH的混合物或者其组合。获得开口的方法的选择不重要。至关重要的特征是钝化层7必须被局部去除以暴露下面的非晶硅层6,或者可替选地,层6、7必须被局部去除以暴露晶片1的掺杂区域3。
钝化过程通过将晶片加热至300-600℃范围内、可优选约500℃的温度下持续4分钟来完成。该退火可以有利地在铝层9的沉积之后执行。
铝层应该具有大约1-50μm范围中的厚度,并且可以通过在约室温至约200℃的温度下溅射或蒸发铝层以覆盖全部第二表面,或者通过丝网印刷铝基金属浆以覆盖全部第二表面来沉积。在丝网印刷含铝的浆的情况下,应该理解的是利用含铝颗粒的商用的厚膜浆,并且该浆可以包含或可以不包含玻璃颗粒,接着在温度<400℃处烘干任何有机溶剂。
铝层中的开口可以通过利用喷墨印刷能够去除金属层但不能去除下面的氮化硅层的蚀刻剂而获得。在铝层中制作孔的情况下,可以采用盐酸作为蚀刻剂。可以采用用于溶解金属相,但不溶解下面的钝化层的公知的任何酸或碱作为蚀刻剂。作为可替选方案,可以喷墨印刷抗蚀剂掩模,接着将晶片浸入蚀刻液中。
Claims (13)
1.一种生产背接触型太阳能电池的方法,其中所述方法包括应用硅衬底、晶片或薄膜,该硅衬底、晶片或薄膜在背面上在交叉指型图案中以交替的P型和N型导电性进行掺杂,并且可选地在所述晶片的前面上掺杂有P型或N型层,
其特征在于,所述方法进一步包括:
-在所述衬底的两面上沉积一个或多个表面钝化层,
-在所述衬底的背面上的表面钝化层中产生开口,
-沉积金属层,所述金属层覆盖整个背面并且填充所述表面钝化层中的开口,以及
-在沉积的金属层中产生开口,从而获得与在衬底背面上的掺杂区域的电绝缘接触。
2.根据权利要求1所述的方法,
其特征在于,
-所述表面钝化层是双层,该双层包括在掺杂的衬底两面上的内部非晶硅层和随后在所述衬底两面的非晶硅层上的氢化氮化硅的外层,
-所述表面钝化层中的开口仅应用于所述衬底背面上的氮化硅层,
-所述金属层是覆盖包括氮化硅层中的开口的衬底的整个背面的铝层,以及
-将所述衬底加热至200-700℃范围中的、优选为300-600℃内的温度。
3.根据权利要求2所述的方法,
其特征在于,
-在所述衬底前面上的内部非晶硅层具有1-150nm范围中的厚度,
-在所述衬底背面上的内部非晶硅层具有1-1000nm范围中的厚度,
-在所述衬底前面上的外部钝化氢化氮化硅层具有10-200nm范围中的厚度,以及
-在所述衬底背面上的外部钝化氢化氮化硅层具有10-1000nm范围中的厚度,以及
-其中所述膜通过等离子体增强型化学气相沉积来沉积。
4.根据权利要求2所述的方法,
其特征在于,
-所述铝层具有1-50μm范围中的厚度,并且通过利用溅射或蒸发来沉积,以及
-在约500℃的温度下进行后面的热处理4分钟。
5.根据权利要求1或2所述的方法,
其特征在于,所述表面钝化层中的开口通过以下步骤获得:
-利用蚀刻剂,所述蚀刻剂被喷墨印刷或丝网印刷到所述衬底背面的外部表面钝化层的区域上,
-利用激光以烧蚀所述表面钝化层,或者
-丝网印刷覆盖要保留在所述衬底背面上的表面钝化层的区域的化学抗蚀剂,以及丝网印刷覆盖所述衬底的整个前表面钝化层的化学抗蚀剂,接着将所述衬底浸入蚀刻剂中以去除未保护的钝化膜。
6.根据权利要求5所述的方法,
其特征在于,
所述化学蚀刻剂包含下列溶剂中的一种或多种:包括稀释或浓缩HF或KOH或NaOH的溶液,或者包括HF、HNO3和CH3COOH的混合物。
7.根据权利要求2所述的方法,
其特征在于,所述半导体衬底的前面和背面的表面钝化层通过以下步骤获得:
-通过浸入到H2SO4和H2O2的混合物,或者HCl、H2O2和H2O的混合物,或者NH4OH、H2O2和H2O的混合物,来清洗半导体衬底,
-通过浸入到稀释的HF来去除所述衬底面上的氧化物膜,
-将所述衬底放入到等离子体增强型化学气相沉积腔室(PECVD腔室)中,
-在约250℃下,通过利用SiH4作为单独的前驱气体,在所述衬底的两面上沉积1-150nm厚的非晶硅膜,
-在约250℃下,通过利用SiH4和NH3的混合物作为前驱气体,在两个非晶硅膜上沉积10-200nm厚的氮化硅膜,以及最后
-在约500℃的温度下对具有沉积的钝化层的衬底退火4分钟。
8.根据权利要求7所述的方法,
其特征在于,在所述衬底背面上的氮化硅层上沉积金属层之后执行所述退火。
9.一种太阳能电池,包括:
-硅衬底(1),该硅衬底(1)在背面上的层(3)中在交叉指型图案中以交替的P型和N型导电性进行掺杂,并且可选地在所述衬底(1)的前面上掺杂有P型或N型层(2),
-在所述衬底(1)的前面上的一个或多个表面钝化层(4、5),
其特征在于,其还包括:
-在所述衬底(1)背面上的一个内部表面钝化层(6)和一个外部表面钝化层(7),
-用于层(3)的每个掺杂区域的在表面钝化层(6、7)中的至少一个开口(8),以及
-金属接触(9),该金属接触(9)填充每个开口(8),以获得与下面的衬底(1)的层(3)中的掺杂区域的电接触,并且其中每个金属接触(9)彼此电绝缘。
10.根据权利要求9所述的太阳能电池,
其特征在于,
-所述表面钝化层是双层,该双层包括在掺杂的衬底(1)两面上的内部非晶硅层(4、6)和随后在所述衬底(1)两面上的非晶硅层(分别为4、6)上的外部氢化氮化硅层(5、7),
-表面钝化层(6、7)中的开口(8)仅应用于所述衬底(1)背面上的氮化硅层(7),
-所述金属接触(9)由铝制成。
11.根据权利要求10所述的太阳能电池,
其特征在于,
-在所述衬底(1)两面上的内部非晶硅层(4、6)具有1-150nm范围内的厚度,
-在所述衬底(1)两面上的外部钝化氢化氮化硅层(5、7)具有10-200nm范围中的厚度,以及
-铝接触(9)具有30-50μm范围中的厚度,所述厚度是垂直于所述表面钝化层来测量的。
12.根据权利要求10或11所述的太阳能电池,
其特征在于,
-所述表面钝化层中的开口(8)仅制作在外部氮化硅层(7)中,以及
-与在所述非晶硅层(6)下方的掺杂区域的电接触通过以下步骤获得:加热所述衬底,直到铝相(8)使位于中间的非晶硅层(6)再结晶并形成连接点(10)。
13.根据权利要求9、10、11或12中任一项所述的太阳能电池,
其特征在于,
所述衬底(1)是单晶、微晶或多晶硅晶片,或者是微晶、多晶或单晶晶粒性质的硅薄膜。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US84801006P | 2006-09-29 | 2006-09-29 | |
US60/848,010 | 2006-09-29 | ||
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GB0622393A GB2442254A (en) | 2006-09-29 | 2006-11-09 | Back contacted solar cell |
PCT/NO2007/000339 WO2008039078A2 (en) | 2006-09-29 | 2007-09-27 | Back contacted solar cell |
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CN101622717B CN101622717B (zh) | 2012-11-28 |
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US (1) | US20100032011A1 (zh) |
EP (1) | EP2074663A2 (zh) |
JP (1) | JP2010505262A (zh) |
CN (1) | CN101622717B (zh) |
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-
2007
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- 2007-09-27 WO PCT/NO2007/000339 patent/WO2008039078A2/en active Application Filing
- 2007-09-27 CN CN2007800434808A patent/CN101622717B/zh not_active Expired - Fee Related
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Also Published As
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GB0622393D0 (en) | 2006-12-20 |
US20100032011A1 (en) | 2010-02-11 |
EP2074663A2 (en) | 2009-07-01 |
GB2442254A (en) | 2008-04-02 |
JP2010505262A (ja) | 2010-02-18 |
WO2008039078A2 (en) | 2008-04-03 |
CN101622717B (zh) | 2012-11-28 |
WO2008039078A3 (en) | 2008-10-16 |
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