CN101621107B - 一种高光效发光二极管及其封装方法 - Google Patents
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Abstract
本发明公开了一种高光效发光二极管,包括基板、安装在基板上的至少一发光芯片、至少一第一电极、至少一第二电极以及透明封装体,所述第一电极、第二电极与发光芯片电性连接,所述透明封装体包覆所述电极与发光芯片。在所述发光芯片和透明封装体之间封装一反光杯,所述反光杯具有反射曲面,部分发光芯片产生的光线在透明封装体和空气临界处发生全反射折回透明封装体,所述反射曲面用于将折回的光线反射出透明封装体。本发明的发光二极管通过试验模拟测算可提高30%以上出光效率。
Description
技术领域
本发明涉及发光二极管,具体涉及一种可提高出光效率的发光二极管及其封装方法。
背景技术
随着节能半导体照明产业发展日趋成熟,发光二极管的应用也变得越来越广泛。发光二极管利用半导体材料电子与空穴复合时能量带位阶的改变,以发光的形式释放能量,具有体积小、寿命长、驱动电压低、反应速度快、耐震性能好等优点,常应用在户外信息看板、汽车车灯、交通标志、照明等领域。
发光二极管发光效率直接关系到发光二极管的亮度,业界提高发光二极管亮度一般有两种方式:第一种是提升发光二极管芯片的光电转换效率或者增加芯片个数或者芯片面积,第二种是提升发光二极管的光学利用率或者减少发光损失。发光二极管的发光效率越高节能效果就越好。目前发光二极管芯片的内量子效率已经达到80%,但由于发光二极管封装技术、结构、材料的限制,其封装外量子效率仅为40%左右,还有极大的提升空间。
现有的发光二极管特别是功率型发光二极管通常有三种封装形式,第一种是采用仿流明结构,如图1所示;第二种是TOP结构,采用PPA反射胶杯支架封装,如图2所示;第三种是平面陶瓷封装结构,如图3所示。
第一种是采用仿流明支架结构,包括胶体底座40’、装设在胶体底座40’上的发光芯片30’以及凸透镜90’,虽然装设凸透镜具有光效高的优点,但该发光二极管的工艺复杂且胶体底座40’反射面小,牺牲了封装腔底部光反射。
第二种是采用PPA反射胶杯支架封装的TOP结构,包括反射胶杯50’、发光芯片30’以及出射平面26’,虽然,该种TOP型发光二极管增加了发光芯片底部的平面光反射,但是,因为发光芯片周围封装有胶体,发光芯片发出的光线在临界出射平面26’处,属于光密物质到光疏物质的传输,部分光线B’在临界出射平面26’处发生全反射,发生全反射的部分光线B’折回封装胶体,并在接下来的逐次反射中消耗殆尽。因此,影响了整个发光二极管的出光效率。
第三种是平面陶瓷基板加凸透镜90’的封装结构,该种封装结构出光率较高,但平面陶瓷基板反光效率并非理想,且封装的工艺较复杂,成本较高,加工难度大。
因此,亟待一种新型发光二极管结构既能够提高出光效率同时又可简化封装工艺以及降低制作成本。
发明内容
本发明要解决的技术问题是弥补上述现有技术的不足,提供一种可提高出光效率的发光二极管及其封装方法。
本发明的技术问题是通过以下技术方案予以解决的:一种高光效发光二极管,包括基板、安装在基板上的至少一发光芯片、至少一第一电极、至少一第二电极以及透明封装体,所述第一电极、第二电极与发光芯片电性连接,所述透明封装体包覆所述电极与发光芯片。在所述发光芯片和透明封装体之间封装一反光杯,所述反光杯具有反射曲面,部分发光芯片产生的光线在透明封装体和空气临界处发生全反射折回透明封装体,所述反射曲面用于将折回的光线反射出透明封装体。
优选的,所述反光杯的反射曲面上进一步设置有用来提高反射率的反光层或者增加漫反射的糙化层。
为了防止过电损害,如ESD或者雷击,所述发光芯片与瞬态电压抑制芯片反向并联。
具体来说,所述反光杯在反射曲面的背面设置支撑体,所述支撑体紧贴基板并且开有罩设瞬态电压抑制芯片的收容槽。
优选的,所述反光杯顶缘设置用来扩大出光范围的弧形突出部。
进一步的结构还包括在所述透明封装体顶部进一步设置凸透镜。
为了实现降低热阻的目的,用于散热的基板上延伸设置若干用于增加散热面积的支脚;同时将LED支架塑封体设置成黑色体,利用黑体吸收热量及热辐射的散热作用来降低整个LED支架的热阻,通过尽可能的吸收发光芯片的热量和尽可能的发散热量两个方面入手,进一步降低热阻。
本发明还涉及一种高光效发光二极管的封装方法,包括以下步骤:
采用具有模腔的LED支架,所述模腔底部为基板;
在基板上贴装发光芯片;
在模腔内嵌入反光杯,所述反光杯具有反射曲面,所述反光杯底部开设用来显露发光芯片的开孔;
焊接发光芯片电极连线;
于反光杯内的模腔中注入液态硅胶,加热固化。
所述高光效发光二极管的封装方法还包括在基板上贴装发光芯片的同时,贴装与焊线瞬态电压抑制芯片的步骤。
所述高光效发光二极管的封装方法还包括在嵌入反光杯之前,在反光杯的反射曲面上增设用来提高反射率的反光层或者用来增加漫反射的糙化层的步骤。
本发明与现有技术相比的有益效果是:1)本发明的高光效发光二极管,在发光芯片和透明封装体之间封装一反光杯,反光杯具有反射曲面,部分发光芯片产生的光线在透明封装体和空气临界处发生全反射折回透明封装体,该反射曲面用于将折回的光线反射出透明封装体,从而提高发光二极管出光效率,通过试验模拟测算可提高30%以上出光效率;2)本发明的高光效发光二极管,在反光杯的反射曲面上进一步设置用来提高反射率的反光层或者增加漫反射的糙化层,从而增强反光杯的反射效果;3)本发明的高光效发光二极管,发光芯片与瞬态电压抑制芯片反向并联,有效防止过电造成的损害,如ESD或者雷击;4)本发明的高光效发光二极管,反光杯的反射曲面的背面设置支撑体,支撑体紧密贴合在基板上,增加了基板的散热面积,促进降低热阻;5)本发明的高光效发光二极管,所述瞬态电压抑制芯片隐藏安装在反射曲面背面的收容槽内,不占据发光芯片的封装空间,结构设计更加合理;6)本发明的高光效发光二极管,所述反光杯顶缘设置用来扩大出光范围的弧形突出部;7)本发明的高光效发光二极管,该基板上延伸设置若干用于增加散热面积的支脚,从而达到降低热阻的目的;8)本发明的高光效发光二极管封装方法,预成型所述反光杯,然后将反光杯直接镶入LED支架的模腔内即可,即可提高出光效率,同时工艺简单,可操作性又好。
附图说明
图1是现有的发光二极管的仿流明结构示意图;
图2是现有的发光二极管的TOP结构示意图;
图3是现有的发光二极管的平面陶瓷结构示意图;
图4是本发明高光效发光二极管的结构示意图;
图5是本发明高光效发光二极管的LED支架俯视图;
图6是本发明高光效发光二极管的LED支架沿图5中A-A剖面线的剖视图;
图7是本发明高光效发光二极管的反光杯的俯视图;
图8是本发明高光效发光二极管的反光杯沿B-B剖面线的剖视图;
图9是本发明高光效发光二极管的并联瞬态电压抑制芯片的电路图;
图10是本发明高光效发光二极管的整合凸透镜的结构示意图;
图11是本发明高光效发光二极管在图6中LED支架基础上焊装发光芯片以及瞬态电压抑制芯片的结构示意图;
图12是本发明高光效发光二极管在图11的基础上装设反光杯的结构示意图;
图13是本发明高光效发光二极管在图12的基础上装设凸透镜的结构示意图。
具体实施方式
下面通过具体的实施方式并结合附图对本发明做进一步详细说明。
请参考图4至图9,本发明涉及一种发光二极管,本实施方式中,该发光二极管主要包括LED支架20、设置在LED支架20上的基板40、第一电极32、第二电极34、安装在基板40上的发光芯片30以及透明封装体26。该第一电极32和第二电34与发光芯片30电性连接。透明封装体26包覆第一电极和第二电极32、34与发光芯片30。
为了满足不同大小发光芯片30的发光需要,可以设置两对第一电极与第二电极。或者为了满足不同亮度的需要,可以在该LED支架20上设置若干个发光芯片30。
本发明的发光二极管在发光芯片30周围和透明封装体26下方安装一反光杯50。该反光杯50的特点是具有反射曲面51。部分发光芯片30产生的光线B在透明封装体26和空气临界处发生全反射折回透明封装体26,所述反射曲面51用于将折回的光线B反射出透明封装体26。
如图7、图8所示,该反光杯50的具体结构包括作为杯体的反射曲面51、开设在反光杯底部的开孔59、形成在反光杯顶部边缘的弧形突出部54以及从反光杯背面延伸设置的支撑体58。所述作为杯体的反射曲面51上开设有焊接孔52。该支撑体58内开设有收容槽56。本例中,所述由导热材料制成的支撑体58紧贴在基板40上。增加了基板40的散热面积,进一步降低热阻。
该反光杯顶缘设置的弧形突出部54在结合凸透镜的情况下,可充分扩大发光二极管的出光范围。
为了进一步提高出光效率,该反光杯50的反射曲面51上进一步设置有用来提高反射率的反光层或者增加漫反射的糙化层。本例中,所述反光层可为镀亮银层或者镀铝层。所述糙化层可通过在镀亮银层或者镀铝层的基础上通过喷砂工艺加工而成。
该LED支架20包括支架塑封体22、第一电极引脚12和第二电极引脚10,所述基板40和第一电极引脚、第二电极引脚12、10安装在该支架塑封体22内。支架塑封体22顶部凹陷形成一封装发光芯片30的模腔24。模腔24下部设置该基板40。第一电极32焊接在第一电极引脚12上,第二电极34焊接在第二电极引脚10上。
所述支架塑封体22混合有热辐射吸收物质。本例中该支架塑封体22设置成黑体。该黑体支架塑封体22吸收发光芯片30产生的热量,利用黑体辐射的散热作用来降低热阻。
具有低热阻散热功能的基板40朝支架塑封体22外部延伸设置若干散热支脚。本例中,该基板40延伸设置了四个散热支脚42、44、46、48。该基板40在为了共晶焊发光芯片30的区域镀有金属层。本例中,所述金属层可为镀金层或者镀银层。
第一电极引脚和第二电极引脚12、10分别包括固定部与从固定部一侧延伸而出的上引脚10-2、12-2和下引脚10-1、12-1。两电极引脚的上引脚10-2、12-2和下引脚10-1、12-1之间形成防止对应电极引脚脱落的卡槽。
如图9所示,本实施方式中,为了防止过电损害,如静电放电(ESD)或者雷击,发光芯片30与一瞬态电压抑制芯片60反向并联。具体来说,所述瞬态电压抑制芯片60采用瞬态电压抑制二极管。本例中,所述瞬态电压抑制芯片隐藏安装在反射曲面51背面支撑体58的收容槽56内。不占据发光芯片30的封装空间。
请参考图10,本实施方式中的发光二极管的进一步的结构还包括在所述透明封装体26顶部进一步设置凸透镜90。
请一并参考图6,图11至图13,本发明还涉及一种高光效发光二极管的封装方法。图6所示为本例中LED支架沿图5中A-A剖面线的剖视图。发光二极管内部元件的安装步骤如图11-13所示。
具体包括以下步骤:
采用具有模腔24的LED支架20,所述LED支架包括黑色的支架塑封体22。所述模腔24底部为基板40;
贴装瞬态电压抑制芯片60;
对瞬态电压抑制芯片60进行连线焊线;
在基板40上贴装发光芯片30;
在模腔内嵌入反光杯50,所述反光杯50具有反射曲面51,所述反光杯50底部开设用来贴装发光芯片50的开孔59;
将发光芯片30的第一电极32和第二电极34透过反光杯50的焊接孔52焊接在对应的第一电极引脚12和第二电极引脚10上;
在反光杯50内的模腔24中注入液态硅胶,加热固化。
本实施方式中的封装方法中,还包括在嵌入反光杯50之前,在反光杯的反射曲面51上增设用来提高反射率的反光层或者用来增加漫反射的糙化层的步骤。
本例中,所述增设反光层的步骤为在反射曲面51出光方向镀设亮银层或者镀设铝层。
本例中,所述增设糙化层的步骤可为在镀设的亮银层或者镀设的铝层之前通过压膜成型。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,并不局限于本实施例。凡在本发明所属技术原则和精神内做任何修改、等同替换,都应当视为属于本发明的保护范围。
Claims (8)
1.一种高光效发光二极管,包括基板、安装在基板上的至少一发光芯片、至少一第一电极、至少一第二电极以及透明封装体,所述第一电极、第二电极与发光芯片电性连接,所述透明封装体包覆所述电极与发光芯片,其特征在于:还包括一反光杯,所述反光杯设置在发光芯片周围和透明封装体下方,所述反光杯包括作为杯体的反射曲面,且在反射曲面的背面设置支撑体;部分发光芯片产生的光线在透明封装体和空气临界处发生全反射折回透明封装体,所述反射曲面用于将折回的光线反射出透明封装体;所述反射曲面上还设置有用来提高反射率的反光层或者增加漫反射的糙化层。
2.根据权利要求1所述的高光效发光二极管,其特征在于:所述发光芯片与瞬态电压抑制芯片反向并联。
3.根据权利要求2所述的高光效发光二极管,其特征在于:所述支撑体紧贴基板并且开有罩设瞬态电压抑制芯片的收容槽。
4.根据权利要求1-3任意一项所述的高光效发光二极管,其特征在于:所述反光杯顶缘设置用来扩大出光范围的弧形突出部。
5.根据权利要求4所述的高光效发光二极管,其特征在于:所述透明封装体顶部进一步设置凸透镜。
6.根据权利要求5所述的高光效发光二极管,其特征在于:用于散热的基板上延伸设置若干用于增加散热面积的支脚。
7.一种高光效发光二极管的封装方法,包括以下步骤:
采用具有模腔的LED支架,所述模腔底部为基板;
在基板上贴装发光芯片;
在反光杯的反射曲面上增设用来提高反射率的反光层或者用来增加漫反射的糙化层后,在模腔中嵌入反光杯,所述反光杯包括作为杯体的反射曲面,且在反射曲面的背面设置支撑体,所述反光杯还开设用来显露发光芯片的开孔;
焊接发光芯片电极连线;
于反光杯内的模腔中注入液态硅胶,加热固化。
8.根据权利要求7所述的高光效发光二极管的封装方法,其特征在于:
还包括在基板上贴装发光芯片的同时,贴装与焊接瞬态电压抑制芯片电极连线的步骤。
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