CN101615658B - Donor substrate and method of manufacturing display - Google Patents

Donor substrate and method of manufacturing display Download PDF

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Publication number
CN101615658B
CN101615658B CN2009101486355A CN200910148635A CN101615658B CN 101615658 B CN101615658 B CN 101615658B CN 2009101486355 A CN2009101486355 A CN 2009101486355A CN 200910148635 A CN200910148635 A CN 200910148635A CN 101615658 B CN101615658 B CN 101615658B
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layer
substrate
interfering
donor substrate
transfer printing
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CN101615658A (en
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肥后智之
松尾圭介
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Sony Corp
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Sony Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles

Abstract

The present invention provides a donor substrate used in forming a light emitting layer by forming a transfer layer containing light emission material, irradiating a radiation ray to the transfer layer while the transfer layer and a substrate to be transferred face each other, and sublimating or vaporizing the transfer layer so that the transfer layer is transferred to the substrate to be transferred. The donor substrate includes: a base; a photothermal conversion layer arranged on the base; and a heat interfering layer arranged between the base and the photothermal conversion layer, and including two or more layers with refraction index different from each other. The donor substrate can improve absorption rate within the wavelength range by regulating refraction index (material) and thickness of the heat interfering layer.

Description

Donor substrate and manufacturing method of display device
The cross reference of related application
The application comprises Japan of submitting to Japan Patent office with on June 25th, 2008 and on December 9th, 2008 relevant theme of disclosure of patent application JP 2008-165971 and JP 2008-313105 formerly, incorporates these full contents in first to file into this paper by reference at this.
Technical field
The present invention relates to employed donor substrate when the luminescent layer that forms by printing transferring method in the organic luminescent device, and use this donor substrate to make the method for display.
Background technology
In recent years, people are studying display of future generation energetically, and use organic luminescent device (organic electroluminescent (EL, electroluminescence) organic light emitting display device) has caused people's attention, in above-mentioned organic luminescent device, first electrode, comprise that a plurality of organic layers of luminescent layer and second electrode stack gradually on driving substrate.Because organic light emitting display is an emissive type, therefore has wide visual angle.In organic light emitting display,, therefore can save electric energy because backlight optional.In addition, the responsiveness height, and can realize the type as thin as a wafer (low-profile) of display.Therefore, expect very much organic light emitting display is applied to such as large screen displays such as TVs.
For the size that increases this organic light emitting display and boost productivity, people have considered the mother glass (mother glass) that uses a kind of size bigger.At this moment, using the common metal mask to form in the method for luminescent layer, making R, G and B luminescent layer graphical by evaporation or coating luminescent material across metal mask.In this metal mask, metallic plate is provided with opening figure.Therefore, along with the increase of substrate size, must increase the size of metal mask.
Yet along with the increase of metal mask size, the bending that is caused by the mask own wt and the complexity of conveying become obviously, and aim at the difficulty that becomes.Therefore, be difficult to fully improve aperture opening ratio, the result makes the device property deterioration.
As the pattern technology that does not use metal mask, once provided the printing transferring method of a kind of use such as the laser israds.In this printing transferring method, formed the donor element that is provided with transfer printing layer, this transfer printing layer comprises the luminescent material as support material, and this donor element is transferred substrate facing to being used to form organic light-emitting device.Then, by illumination radiation line under reduced pressure atmosphere transfer printing layer is transferred to and is transferred on the substrate.Except using laser as the radiation, also have a kind of situation to be, use and scioptics are assembled the light (for example, with reference to Japanese Patent Application Publication communique No.1997-167684 (the 0017th section and the 0028th section)) that sends from xenon flash lamp.
In the donor substrate of prior art, for example only locate the photothermal transformation layer by chromium formations such as (Cr) is carried out graphically at the desired zone (zone that need be transferred) of the matrix that constitutes by glass or film.In transfer step, the transfer printing layer of organic material is formed on the donor substrate, and laser shines partly corresponding to photothermal transformation layer.Therefore, only the required scope in the transfer printing layer is transferred to and is transferred on the substrate.
Yet, using laser to carry out under the situation of hot transfer printing, when increasing substrate size, exist the problem that the processing time is prolonged and the cost of display etc. is increased.Therefore, considered once that xenon flash lamp and halogen infrared lamp etc. were hopeful as the radiation source that replaces laser, because processing in can gathering or disposable transfer printing in than large tracts of land.Yet, also do not develop in the prior art and can effectively absorb the donor substrate that has the radiation of wide wavelength such as photoflash lamp and halogen infrared lamp etc., and under the situation of the donor substrate that uses prior art, significantly energy loss can occur.
In addition, in the donor substrate of prior art, the surface of matrix and photothermal transformation layer quilt is by SiO 2Thermal insulation layer Deng formation is covered with, and is formed with the anti-contamination layer by formations such as molybdenums (Mo) on this thermal insulation layer.Therefore, the heat in the light absorbing zone is in the plane that is diffused into anti-contamination layer radially, and makes the organic material fusing of transfer printing layer and profile take place lax.Therefore, the not only required scope in the transfer printing layer, and unwanted scope (do not need be transferred zone) also is transferred.Therefore, reduced transfer printing precision and colour mixture with adjacent pixels can occur, these can bring the remarkable reduction of productivity ratio.
Summary of the invention
In view of the foregoing, the present invention expectation provides a kind of and can effectively absorb the donor substrate of the radiation with wide wavelength and use this donor substrate to make the method for display.
The present invention also expects to provide a kind of and the required scope of transfer printing layer can be carried out the donor substrate of transfer printing and used this donor substrate to make the method for display with high accuracy.
Embodiments of the present invention provide the first kind of donor substrate that uses when forming luminescent layer, described luminescent layer forms as follows: form the transfer printing layer that contains luminescent material; When described transfer printing layer and be transferred substrate mutually in the face of the time, with irradiation with radiation to described transfer printing layer; And make described transfer printing layer distillation or gasification, thereby described transfer printing layer is transferred to described being transferred on the substrate.Described donor substrate comprises as lower member (A)～(C): (A) matrix; (B) be arranged in photothermal transformation layer on the described matrix; And (C) being arranged in hot interfering layer between described matrix and the described photothermal transformation layer, described hot interfering layer comprises the plural layer that has different refraction coefficients each other.
Embodiments of the present invention provide the second kind of donor substrate that uses when forming luminescent layer, described luminescent layer forms as follows: form the transfer printing layer that contains luminescent material; When described transfer printing layer and be transferred substrate mutually in the face of the time, the illumination radiation line; And make described transfer printing layer distillation or gasification, thereby described transfer printing layer is transferred to described being transferred on the substrate.Described donor substrate comprises as lower member (A)～(E): (A) matrix; (B) be arranged in photothermal transformation layer on the described matrix, described photothermal transformation layer is corresponding to the described zone that will form described luminescent layer that is transferred on the substrate; (C) be formed on thermal insulation layer on described photothermal transformation layer and the described matrix; (D) be arranged on the described thermal insulation layer and the bulge-structure in the zone between each photothermal transformation layer; And (E) anti-contamination layer, described anti-contamination layer comprises the first on the end face that is formed on described bulge-structure and is formed on second portion on the end face of described thermal insulation layer, and described first and described second portion are separated from each other.
The invention provides first kind of manufacture method or second kind of manufacture method of embodiment of the present invention display, in described display, be formed with organic luminescent device on driving substrate, described organic luminescent device comprises successively first electrode arranged, have insulating barrier, the multilayer organic layer that comprises luminescent layer and second electrode with the corresponding peristome of light-emitting zone of described first electrode.First manufacture method of described display or second manufacture method comprise the steps: to form a part of organic layer of described first electrode, described insulating barrier and described multilayer organic layer on described driving substrate, form thus and be transferred substrate; In donor substrate, form the transfer printing layer that contains luminescent material, when described transfer printing layer and described be transferred substrate mutually in the face of the time illumination radiation line, thereby and make described transfer printing layer distillation or gasification that described transfer printing layer is transferred to described being transferred on the substrate, form luminescent layer thus; And the remainder and described second electrode that form described multilayer organic layer.As above-mentioned donor substrate, used first kind or second kind of donor substrate of embodiment of the present invention.
In first kind of donor substrate of embodiment of the present invention, between described matrix and described photothermal transformation layer, be furnished with hot interfering layer, this hot interfering layer comprises the plural layer that has different refraction coefficients each other.Therefore, can adjust the reflectivity of described hot interfering layer, and improve absorptivity when the radiation that exposes to described donor substrate is absorbed by described photothermal transformation layer and is converted into heat according to the luminous zone of described radiation.
In second kind of donor substrate of embodiment of the present invention, described anti-contamination layer comprises the first on the end face that is formed on described bulge-structure and is formed on second portion on the end face of described thermal insulation layer, and described first and described second portion are separated from each other.So, reduced thermal diffusion significantly by described anti-contamination layer.Therefore, reduced the risk that the unwanted scope in the described transfer printing layer is transferred, and can be with the needed scope of high accuracy transfer printing.
In first kind of donor substrate of embodiment of the present invention, between described matrix and described photothermal transformation layer, be furnished with hot interfering layer, this hot interfering layer comprises the plural layer that has different refraction coefficients each other.Therefore, by refraction coefficient (material) and the thickness of adjusting described hot interfering layer, the absorptivity in the wide wave-length coverage is improved.
In second kind of donor substrate of embodiment of the present invention, described anti-contamination layer comprises the first on the end face that is formed on described bulge-structure and is formed on second portion on the end face of described thermal insulation layer, and described first and described second portion are separated from each other.So, reduced thermal diffusion significantly by described anti-contamination layer, and can be with the required scope of the described transfer printing layer of high accuracy transfer printing.Therefore, when using this donor substrate to make organic light emitting display, do not use mask just can form luminescent layer accurately.
From following explanation, can embody other and further purpose, feature and advantage of the present invention more fully.
Description of drawings
Fig. 1 is the figure that illustrates the structure of first embodiment of the invention display;
Fig. 2 is the figure that illustrates the embodiment of pixel-driving circuit among Fig. 1;
Fig. 3 is the sectional view that illustrates the structure of viewing area among Fig. 1;
Fig. 4 A～Fig. 4 C is the plane graph that illustrates the structure of first electrode and insulating barrier among Fig. 3;
Fig. 5 is the sectional view that illustrates the structure of the donor substrate that uses in the method for making display shown in Figure 1;
Fig. 6 A and Fig. 6 B illustrate the sectional view of making the method for donor substrate by process sequence;
Fig. 7 A and Fig. 7 B illustrate the sectional view of making the method for display shown in Figure 1 by process sequence;
Fig. 8 is the sectional view that is used for the effect of key diagram 4A～Fig. 4 C projection (rib);
Fig. 9 A and Fig. 9 B are the sectional views that is used to illustrate the example and the problem of prior art donor substrate;
Figure 10 is the sectional view that illustrates the variation of step among Fig. 7 B;
Figure 11 is the sectional view that illustrates the variation of donor substrate among Fig. 5;
Figure 12 illustrates the sectional view that uses donor substrate among Figure 11 to make the method for display;
Figure 13 is the sectional view that illustrates the variation of step among Figure 12;
Figure 14 is the sectional view that illustrates the structure of second embodiment of the invention donor substrate;
Figure 15 is the sectional view that illustrates the third embodiment of the invention donor substrate;
Figure 16 is the figure that illustrates the absorption spectrum in the hot interfering layer;
Figure 17 is the figure that illustrates the absorption spectrum in the hot interfering layer;
Figure 18 is the figure that illustrates the absorption spectrum in the hot interfering layer;
Figure 19 illustrates by using the sectional view of the transfer step that donor substrate carries out among Figure 15;
Figure 20 is the plane graph that illustrates the embodiment of irradiation with radiation method;
Figure 21 is the plane graph that illustrates another embodiment of irradiation with radiation method;
Figure 22 is the sectional view that illustrates the variation of donor substrate among Figure 15;
Figure 23 A and Figure 23 B are used for illustrating the structure of comparative example 1 donor substrate and the sectional view of problem;
Figure 24 is the schematic structure plane graph that illustrates the module of the display that comprises first～the 3rd execution mode;
Figure 25 is the stereoscopic figure of application examples 1 that illustrates the display of first～the 3rd execution mode;
Figure 26 A be illustrate from the top view of application examples 2 to stereoscopic figure, and Figure 26 B illustrates the observed stereoscopic figure from the back side of application examples 2;
Figure 27 is the stereoscopic figure that illustrates application examples 3;
Figure 28 illustrates the stereoscopic figure of application examples 4;
Figure 29 A is the front view of the open mode of application examples 5, Figure 29 B is the end view of open mode, Figure 29 C is the front view of closed condition, Figure 29 D is the left view of closed condition, Figure 29 E is the right view of closed condition, Figure 29 F is the top view of closed condition, and Figure 29 G is the bottom view of closed condition;
Figure 30 illustrates the sectional view of other structures of viewing area shown in Figure 3.
Embodiment
Describe preferred implementation of the present invention with reference to the accompanying drawings in detail.To illustrate in the following order.
1. first execution mode (using laser to be provided with the example of bulge-structure as radiation and donor substrate).
2. variation 1 (in each zone that is separated by bulge-structure, being provided with the example of the transfer printing layer of different colours).
3. second execution mode (between matrix and photothermal transformation layer, being provided with the example of the hot interfering layer of single layer structure).
4. the 3rd execution mode (use has the radiation source of wide wavelength and the example that hot interfering layer has stepped construction).
First execution mode
Display
Fig. 1 illustrates the structure of first embodiment of the invention display.This display is used as type organic light emission color monitor etc. as thin as a wafer.In this display, for example, on the driving substrate 11 of glass material, be formed with viewing area 110, be furnished with a plurality of luminescent device 10R, the 10G and the 10B that are matrix arrangement that illustrate later in this viewing area 110, and be formed with as signal-line driving circuit 120 and the scan line drive circuit 130 of image demonstration with driver at these viewing area 110 peripheries.
In viewing area 110, be formed with pixel-driving circuit 140.Fig. 2 illustrates the embodiment of pixel-driving circuit 140.Pixel-driving circuit 140 is formed in the layer of first electrode, 13 belows that illustrate later.Pixel-driving circuit 140 is active driving circuits, and it comprises: driving transistors Tr1 and write transistor Tr2, the organic luminescent device 10R (perhaps 10G or 10B) that is arranged in the capacitor C s (maintenance electric capacity) between driving transistors Tr1 and the write transistor Tr2 and is connected in series with driving transistors Tr1 between first power line (Vcc) and second source line (GND).Driving transistors Tr1 and write transistor Tr2 are made of general thin transistor (TFT).For example, the structure of TFT is not subjected to concrete restriction, and can be contrary shifted structure (inverted staggered structure) (so-called bottom gate type) or shifted structure (top gate type).
In pixel-driving circuit 140, on column direction, be furnished with many signal line 120A, and on line direction, be furnished with multi-strip scanning line 130A.Cross part between each signal line 120A and each the bar scan line 130A is corresponding to any organic luminescent device (sub-pix) among organic luminescent device 10R, 10G and the 10B.Each signal line 120A is connected with signal-line driving circuit 120, and by holding wire 120A picture signal is provided to the source electrode of write transistor Tr2 from signal-line driving circuit 120.Each bar scan line 130A is connected with scan line drive circuit 130, and by scan line 130A sweep signal is provided to the gate electrode of write transistor Tr2 successively from scan line drive circuit 130.
Fig. 3 illustrates the embodiment of the cross section structure of viewing area 110.In viewing area 110, be formed with organic luminescent device 10R, organic luminescent device 10G that produces green glow that produces ruddiness and the organic luminescent device 10B that produces blue light successively with matrix form on the whole.Organic luminescent device 10R, 10G and 10B have rectangular planar shape, and are disposed on the longitudinal direction (column direction) according to every kind of color.Organic luminescent device 10R, 10G that is closely adjacent to each other and 10B have constituted a pixel.Pel spacing for example is 300 μ m.
In organic luminescent device 10R, 10G and 10B, from driving substrate 11 sides and driving transistors (not shown) across above-mentioned pixel-driving circuit 140 and planarization insulating film (not shown), stack gradually first electrode 13 as anode, insulating barrier 14, organic layer 15 and as second electrode 16 of negative electrode, this organic layer 15 comprises red light luminescent layer 15CR, green luminescence layer 15CG or the blue light-emitting 15CB that illustrates later.
On this organic luminescent device 10R, 10G and 10B, be coated with silicon nitride (SiN x) wait the diaphragm 17 of formation.In addition, be bonded with the hermetic sealing substrate 30 that constitutes by glass etc. across knitting layer 20, thus organic luminescent device 10R, 10G and 10B sealed in the whole surface of diaphragm 17.
First electrode 13 is for example made by ITO (indium tin composite oxides) or IZO (indium zinc composite oxide).First electrode 13 also can be made of reflecting electrode.Under these circumstances, first electrode 13 for example has the thickness that 100nm is above and 1000nm is following, and preferably, first electrode 13 has high as far as possible reflectivity so that improve luminous efficiency.As the material that is used for first electrode 13, for example have such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W) or the simple substance of silver metallic elements such as (Ag) or the alloy of these metallic elements.
Insulating barrier 14 is guaranteed the insulating properties between first electrode 13 and second electrode 16, and light-emitting zone can be made for required form fully.Insulating barrier 14 for example has about 1 μ m thickness, and by making such as photosensitive resins such as silica or polyimides.In insulating barrier 14, be provided with first electrode 13 in light-emitting zone 13A corresponding opening portion.Insulating barrier 14 is gone back the bulge-structure of double as in driving substrate 11 sides, and this bulge-structure is corresponding to the bulge-structure 44 in the donor substrate 40 that illustrates later.Not only can be furnished with the organic layer 15 and second electrode 16 continuously on the light-emitting zone 13A but also on insulating barrier 14.Yet, only produce luminous at the peristome place of insulating barrier 14.
Fig. 4 A～Fig. 4 C illustrates the embodiment of the planar structure of first electrode 13 and insulating barrier 14.For example insulating barrier 14 is set to checker pattern.On insulating barrier 14, the position of the light-emitting zone 13A in leaving first electrode 13 (for example, the grid crosspoint of insulating barrier 14) is furnished with projection 14A.Bulge-structure 44 in the transfer step that projection 14A has avoided illustrating in the back in the donor substrate 40 is in contact with one another with insulating barrier 14.Therefore, the height H of projection 14A preferably is higher than the height of bulge-structure 44, and can for example be about 5 μ m.Projection 14A is for example by making with the material identical materials of insulating barrier 14.On driving substrate 11, be provided with the alignment mark M that the transfer step that is used for illustrating in the back and donor substrate 40 carry out position alignment.
Illustrated organic layer 15 has following structure among Fig. 3, in this structure, has stacked gradually from first electrode, 13 sides: hole injection layer and hole transporting layer 15AB; Red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB; And electron supplying layer and electron injecting layer 15DE.For these layers, if necessary, the layer except red light luminescent layer 15CR, green luminescence layer 15CG and blue light-emitting 15CB can be set.The structure of organic layer 15 can depend on the color of the light that sends from organic luminescent device 10R, 10G and 10B and be different.Hole injection layer has improved the hole injection efficiency, and also is to be used to prevent the resilient coating revealed.Hole transporting layer has improved the cavity conveying efficient to red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB.The compound of electronics and hole taken place by applying electric field, and red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB generation light.Electron supplying layer has improved the electron transport efficient to red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB.Electron injecting layer has for example thickness of about 0.3nm, and by LiF or Li 2O etc. make.In Fig. 3, hole injection layer and hole transporting layer are illustrated as one deck (hole injection layer and hole transporting layer 15AB), and electron supplying layer and electron injecting layer are illustrated as one deck (electron supplying layer and electron injecting layer 15DE).
Hole injection layer among the organic luminescent device 10R for example has the thickness that 5nm is above and 300nm is following, and by 4,4 ', 4 "-three (3-methyl phenyl phenyl amino) triphenylamine (4; 4 '; 4 "-tris (3-methyl phenyl phenylamino) triphenylamine, m-MTDATA) or 4,4 '; 4 "-three (2-naphthyl phenyl amino) triphenylamine (4,4 ', 4 "-and tris (2-naphthyl phenylamino) triphenylamine, 2-TNATA) make.Hole transporting layer among the organic luminescent device 10R for example has the thickness that 5nm is above and 300nm is following, and by two [(N-naphthyl)-N-phenyl] benzidine (bis[(N-naphthyl)-N-phenyl] benzidine, α-NPD) make.Red light luminescent layer 15CR among the organic luminescent device 10R for example has the thickness that 10nm is above and 100nm is following, and pass through 2 of 30 weight %, 6-two [(4 '-methoxyl group diphenyl amino) styryl]-1, the 5-dicyano naphthalene (2, the styryl of 6-bis[(4 '-methoxydiphenylamino)]-1,5-dicyanonaphthalene, BSN) be mixed into 9,10-two (2-naphthyl) anthracene (9,10-di-(2-naphthyl) anthracene, ADN) in and constitute.Electron supplying layer among the organic luminescent device 10R for example has the thickness that 5nm is above and 300nm is following, and by oxine aluminium (8-hydroxyquinoline aluminum, Alq 3) make.
Hole injection layer among the organic luminescent device 10G for example has the thickness that 5nm is above and 300nm is following, and is made by m-MTDATA or 2-TNATA.Hole transporting layer among the organic luminescent device 10G for example has the thickness that 5nm is above and 300nm is following, and is made by α-NPD.Green luminescence layer 15CG among the organic luminescent device 10G for example has the thickness that 10nm is above and 100nm is following, and is mixed among the ADN by the coumarin 6 (Coumarin 6) with 5 volume % and constitutes.Electron supplying layer among the organic luminescent device 10G for example has the thickness that 5nm is above and 300nm is following, and by Alq 3Make.
Hole injection layer among the organic luminescent device 10B for example has the thickness that 5nm is above and 300nm is following, and is made by m-MTDATA or 2-TNATA.Hole transporting layer among the organic luminescent device 10B for example has the thickness that 5nm is above and 300nm is following, and is made by α-NPD.Blue light-emitting 15CB among the organic luminescent device 10B for example has the thickness that 10nm is above and 100nm is following, and pass through 4 of 2.5 weight %, 4 '-two [2-{4-(N, the N-diphenyl amino) phenyl } vinyl] biphenyl (4,4 '-bis[2-{4-(N, N-diphenylamino) phenyl}vinyl] biphenyl, DPAVBi) be mixed among the ADN and constitute.Electron supplying layer among the organic luminescent device 10B for example has the thickness that 5nm is above and 300nm is following, and by Alq 3Make.
Second electrode 16 shown in Figure 3 for example has the thickness that 5nm is above and 50nm is following, and by making such as aluminium (Al), magnesium (Mg), calcium (Ca) or the simple substance of sodium metallic elements such as (Na) or the alloy of these metallic elements.In these simple substance and alloy, preferably magnesium and the alloy (MgAg alloy) of silver or the alloy (AlLi alloy) of aluminium (Al) and lithium (Li).
Diaphragm 17 shown in Figure 3 prevents that moisture etc. from penetrating in the organic layer 15.Diaphragm 17 is made by the material with low water permeability and low water absorbable, and has adequate thickness.In addition, diaphragm 17 has high-transmission rate for the light that is produced by luminescent layer 15C, and is made by the material that for example has 80% above transmissivity.This diaphragm 17 for example has the thickness of about 2 μ m～3 μ m, and is made by inorganic amorphous insulating material.Particularly, preferred amorphous silicon (a-Si), noncrystalline silicon carbide (a-SiC), amorphous silicon nitride (a-Si 1-xN x) and amorphous carbon (a-C).Because inorganic amorphous insulating material does not contain crystal grain and has low water permeability, it is favourable therefore using this material to form diaphragm 17.Diaphragm 17 can be by making such as transparent conductive materials such as ITO.
Knitting layer 20 shown in Figure 3 is for example made by heat reactive resin or ultraviolet curable resin.
Hermetic sealing substrate 30 shown in Figure 3 is positioned in second electrode, 16 sides of organic luminescent device 10R, 10G and 10B.Hermetic sealing substrate 30 seals organic luminescent device 10R, 10G and 10B with knitting layer 20, and hermetic sealing substrate 30 is by have making such as materials such as clear glasses of high-transmission rate for the light that produces in organic luminescent device 10R, 10G and 10B.In hermetic sealing substrate 30, for example be provided with the chromatic filter (not shown).This chromatic filter is drawn the light that produces in organic luminescent device 10R, 10G and 10B, and absorbs by the natural daylight of the cloth line reflection between organic luminescent device 10R, 10G and 10B and organic luminescent device 10R, 10G and the 10B, thereby improves contrast.
Donor substrate
Then, the donor substrate that uses is described in manufacturing method of display device.
Fig. 5 illustrates the structure of donor substrate.Donor substrate 40 is used in by printing transferring method and forms in the step of red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB.In donor substrate 40, photothermal transformation layer 42, thermal insulation layer 43, bulge-structure 44 and anti-contamination layer 45 on matrix 41, have been stacked gradually.
As the back illustrates, use matrix 41 to form transfer printing layer, this transfer printing layer contains the luminescent material that constitutes red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB.Matrix 41 utilizes this solidness to carry out position alignment with the substrate that is transferred that illustrates later by having solidness and the material that laser has a high-transmission rate being made.For example, matrix 41 is made by glass or film.
Photothermal transformation layer 42 absorbs laser and converts laser to heat, and this photothermal transformation layer 42 is made by the alloy that has the metal material of high-absorbable such as molybdenum (Mo), chromium (Cr), titanium (Ti) or tin (Sn) etc. or contain these metal materials.Photothermal transformation layer 42 for example is formed the bar shape that width is 100 μ m, and corresponding to wanting to form red light luminescent layer 15CR, green luminescence layer 15CG on the driving substrate 11 or the zone (light-emitting zone 13A) of blue light-emitting 15CB.
The thermal diffusion that thermal insulation layer 43 suppresses from photothermal transformation layer 42, and be formed on the whole surface of photothermal transformation layer 42 and matrix 41.Thermal insulation layer 43 for example has the thickness of about 300nm, and by SiO 2, SiN, SiON or Al 2O 3Deng making.
Bulge-structure 44 is formed in the zone between each photothermal transformation layer 42 on the thermal insulation layer 43 with bar shape, and is made by for example polyimides or acrylic resin.
Laser on the zone of anti-contamination layer 45 reflected illumination outside the required scope of transfer printing layer, protection has been formed on organic layer 15 and the pixel-driving circuit 140 that is transferred on the substrate thus.Preferably, anti-contamination layer 45 for example has reflectivity more than 85% in the wavelength region may of 450nm～1500nm.This is because when the reflectivity of anti-contamination layer 45 hangs down, and exists the risk of anti-contamination layer 45 meeting absorbing light and picked-up heat.As the material that is used for anti-contamination layer 45, molybdenum (Mo), chromium (Cr), titanium (Ti) or tin metals such as (Sn) are for example arranged or contain the alloy of these metals.
Anti-contamination layer 45 comprises 45A of first that is formed on bulge-structure 44 end faces and the second portion 45B that is formed on thermal insulation layer 43 end faces.45A of first and second portion 45B are separated from each other.Therefore, in donor substrate 40, can carry out transfer printing to the required scope of transfer printing layer with high accuracy.
That is to say that by 45A of first in the anti-contamination layer 45 and second portion 45B are separated, bulge-structure 44 can prevent that parts are to reduce the thermal diffusion of being undertaken by anti-contamination layer 45 as thermal diffusion.Therefore, bulge-structure 44 preferably has the back taper cross section of bottom width W2 less than top width W1.This is owing to when deposition anti-contamination layer 45, also can fully separate 45A of first and second portion 45B without lithography step.In addition, forming by ink ejecting method under the situation of transfer printing layer, can suppress the outside that drop leaks into bulge-structure 44.Particularly, it is above and below 140 degree that the inclined angle alpha between the plane of the side of bulge-structure 44 and matrix 41 is preferably 75 degree.
Bulge-structure 44 preferably has the height that 0.3 μ m is above and 10 μ m are following.When the distance between the 45A of first of photothermal transformation layer 42 and anti-contamination layer 45 being made as when longer, reduced thermal diffusion by thermal insulation layer 43 and bulge-structure 44 itself.
In addition, anti-contamination layer 45 preferably has the thickness that 25nm is above and 500nm is following.When thickness during less than 25nm, laser sees through anti-contamination layer 45, and can not obtain enough efficient.When thickness during, when deposition anti-contamination layer 45, be difficult to fully separately the 45A of first and second portion 45B greater than 500nm.
Donor substrate 40 can be made as follows and form.
As shown in Figure 6A, on the matrix 41 of above-mentioned material, form the photothermal transformation layer 42 of above-mentioned material, and this photothermal transformation layer 42 is configured as reservation shape by photoetching and engraving method by for example sputtering method.Then, shown in Fig. 6 B, (chemical vapordeposition, CVD) method forms the thermal insulation layer 43 of above-mentioned material by for example chemical vapour deposition (CVD).
Then, shown in Fig. 6 B, on the whole surface of matrix 41, apply photosensitive resin, by for example photoetching method this photosensitive resin is configured as reservation shape, and fires.Therefore, formed bulge-structure 44.At this moment, bulge-structure 44 for example has the cross section of height and the back taper of 3 μ m.
After this, by sputtering method, form the anti-contamination layer 45 of above-mentioned material with the thickness of for example 150nm.At this moment, anti-contamination layer 45 is interrupted at the place, side of bulge-structure 44, and is separated into 45A of first that is formed on bulge-structure 44 end faces and the second portion 45B that is formed on thermal insulation layer 43 end faces.Therefore, be unnecessary such as photoetching figures step.In this way, formed donor substrate shown in Figure 5 40.
Manufacturing method of display device
For example can make display by the mode that illustrates below.
On driving substrate 11, form first electrode 13, insulating barrier 14 and hole injection layer and hole transporting layer 15AB, be transferred substrate 11A thereby form.
That is to say, prepare the driving substrate 11 of above-mentioned material, and on driving substrate 11, form pixel-driving circuit 140.After this, thus form the planarization insulating film (not shown) by coating photosensitive resin on the whole surface of driving substrate 11.By exposure and development this planarization insulating film is patterned into reservation shape, and forms and fire the connecting hole (not shown) between the driving transistors Tr1 and first electrode 13.
Then, form first electrode 13 of above-mentioned material, and first electrode 13 is configured as reservation shape by for example dry-etching by sputtering method for example.The alignment mark of position alignment is carried out in pre-position on driving substrate 11 with donor substrate in the transfer step that can be formed for illustrating in the back.
Then, on the whole surface of driving substrate 11, form insulating barrier 14, and by the light-emitting zone 13A corresponding opening portion in for example photoetching method setting and first electrode 13.
After this, on insulating barrier 14, the position of the light-emitting zone 13A in leaving first electrode 13 (for example, the grid crosspoint of insulating barrier 14) located, and the projection 14A that has above-mentioned height and be made of above-mentioned material is set.
After this, by the evaporation coating method that for example uses region mask to carry out, deposit hole injection layer and the hole transporting layer 15AB that has above-mentioned thickness and constitute successively by above-mentioned material.Thus, formed and be transferred substrate 11A.
After formation is transferred substrate 11A, prepares a plurality of above-mentioned donor substrates 40, and shown in Fig. 7 A, on each donor substrate 40, form the transfer printing layer of any one color in red, green or the blue transfer printing layer 50 by for example vacuum deposition method.
Then, use donor substrate 40 to form red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB by printing transferring method.That is to say that shown in Fig. 7 B, for example when forming red light luminescent layer 15CR, the transfer printing layer 50 in the donor substrate 40 is facing to being transferred substrate 11A.At this moment, because projection 14A (with reference to Fig. 4 A～Fig. 4 C) is set on the insulating barrier 14 that is transferred substrate 11A, therefore formation space G between the bulge-structure 44 of donor substrate 40 and insulating barrier 14.Therefore, as shown in Figure 8, bulge-structure 44 and insulating barrier 14 are not in contact with one another.So, suppressed because contacting and on the organic layer 15 that is deposited, produce step between bulge-structure 44 and the insulating barrier 14, avoided the deterioration in image quality that causes owing to isolychn etc. simultaneously.
Then, shown in Fig. 7 B,,, transfer printing layer 50 distillations or gasification be transferred on the substrate 11A thereby being transferred to transfer printing layer 50 from the rear side irradiating laser LB of donor substrate 40.Therefore, formed red light luminescent layer 15CR.At this, anti-contamination layer 45 comprises the 45A of first that is formed on bulge-structure 44 end faces and is formed on second portion 45B on thermal insulation layer 43 end faces, and the 45A of first and second portion 45B are separated from each other.Thereby, reduced thermal diffusion significantly by anti-contamination layer 45.Therefore, reduced the risk that unwanted scope is transferred in the transfer printing layer 50, and required scope has been carried out transfer printing with high accuracy.
On the other hand, shown in Fig. 9 A, in the donor substrate of prior art, owing on the whole surface of thermal insulation layer 843, form anti-contamination layer 845 continuously, thereby shown in arrow A 1 among Fig. 9 B, in the plane of anti-contamination layer 845, be diffusion radially from the heat of photothermal transformation layer 842.Thereby the organic material that is used for transfer printing layer 850 is melted and profile takes place lax.Therefore, not only needed scope 852 in the transfer printing layer 850 but also unwanted scope (do not need be transferred scope) 851 all is transferred.So, having reduced transfer printing precision and colour mixture with adjacent pixels occurred, these can significantly reduce productivity ratio.In Fig. 9 A and Fig. 9 B, with 8 as each Reference numeral of beginning represent with Fig. 5, Fig. 7 A and Fig. 7 B in the essentially identical element of those elements.
As shown in figure 10, can be at the whole rear side irradiating laser LB of donor substrate 40.In the case, in the zone that is not formed with photothermal transformation layer 42, laser LB is reflected by anti-contamination layer 45 shown in arrow A 4, and the unwanted scope 51 in the transfer printing layer 50 is not transferred.On the other hand, in the zone that is formed with photothermal transformation layer 42, photothermal transformation layer 42 absorbs laser LB, and has only the needed scope 52 in the transfer printing layer 50 to be transferred to being transferred substrate 11A.
After this, with red light luminescent layer 15CR similarly, form green luminescence layer 15CG or blue light-emitting 15CB.
After forming red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB, make donor substrate 40 and be transferred substrate 11A and separate.Be transferred on the substrate 11A, forming electron supplying layer and the electron injecting layer 15DE and second electrode 16 by for example evaporation coating method.In this way, organic luminescent device 10R, 10G and 10B have been formed.After cleaning and removing the remnants of transfer printing layer 50 and peel off anti-contamination layer 45 by dry process or wet processed, the reusable donor substrate of having used 40.
After forming organic luminescent device 10R, 10G and 10B, on organic luminescent device 10R, 10G and 10B, form the diaphragm 17 of above-mentioned material.As the formation method of diaphragm 17, for example preferably such as deposition processs such as evaporation coating method or CVD methods, the energy of deposited particles is little of the degree that can not influence matrix in this deposition process.Preferably after forming second electrode 16, form diaphragm 17 continuously and second electrode 16 is exposed in the air.Therefore, suppressed organic layer 15 since be subjected to airborne moisture or oxygen influence and by deterioration.In addition, the briliancy that causes for fear of the deterioration owing to organic layer 15 reduces, and preferably the depositing temperature with diaphragm 17 is set as normal temperature, and is to deposit under the condition of minimum value at the stress that makes this film for fear of peeling off of diaphragm 17.
After this, on diaphragm 17, form knitting layer 20, and diaphragm 17 and the hermetic sealing substrate 30 that is provided with chromatic filter are bonded together across knitting layer 20.At this moment, preferably that face that is formed with chromatic filter of hermetic sealing substrate 30 is placed in organic luminescent device 10R, 10G and 10B side.Therefore, finished the display of Fig. 1.
In the display that obtains in this way, gate electrode by write transistor Tr2 offers each pixel with sweep signal from scan line drive circuit 130, and by write transistor Tr2 the picture signal from signal-line driving circuit 120 is remained among the maintenance capacitor C s.That is to say, driving transistors Tr1 is carried out switch control according to the signal that in keeping capacitor C s, keeps.Therefore, drive current Id is injected among each organic luminescent device 10R, 10G and the 10B, and produces luminous by hole and electronics compound.This light transmission second electrode 16, chromatic filter and hermetic sealing substrate 30 are drawn then.
In this way, in the first embodiment, anti-contamination layer 45 comprises the 45A of first that is formed on bulge-structure 44 end faces and is formed on second portion 45B on thermal insulation layer 43 end faces, and the 45A of first and second portion 45B are separated from each other.Therefore, reduce thermal diffusion significantly, and the required scope of transfer printing layer 50 is carried out transfer printing with high accuracy by anti-contamination layer 45.So, when using donor substrate 40 to make organic light emitting display, do not use mask just can form red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB with high accuracy.
Variation 1
Figure 11 illustrates the structure of the donor substrate 40A of variation 1 of the present invention.In the donor substrate 40A of variation 1, on each zone that is separated by bulge-structure 44, be provided with photothermal transformation layer 42.Therefore, can form for each zone and contain the transfer printing layer of different colours luminescent material, thereby reduce the number of times of transfer printing.Except above-mentioned explanation, structure is identical with the structure of first execution mode.
Except each zone that is separated by bulge-structure 44 is provided with the photothermal transformation layer 42, can make the donor substrate 40A of variation 1 according to the mode identical with first execution mode.
Then, illustrate that the donor substrate 40A that uses variation 1 makes the method for display.
Similar with first execution mode, on driving substrate 11, form first electrode 13, insulating barrier 14 and hole injection layer and hole transporting layer 15AB, be transferred substrate 11A thereby form.
Then, as shown in figure 12, for each zone that is separated by bulge-structure 44, contain the red transfer printing layer 50R of different colours light luminescent material, green transfer printing layer 50G and blue transfer printing layer 50B by for example ink ejecting method formation.
Then, as shown in figure 12, by irradiating laser LB and utilize primary transfer, be transferred whole red light luminescent layer 15CR, green luminescence layer 15CG and the blue light-emitting 15CB of formation on the substrate 11A.Therefore, improve the service efficiency of luminescent material, and reduced running cost.In addition, reduced the number of times of transfer printing, and reduced the manufacturing device cost and also improved production capacity.
As shown in figure 13, laser LB can be exposed to the whole back side of donor substrate 40A.
After forming red light luminescent layer 15CR, green luminescence layer 15CG and blue light-emitting 15CB, with donor substrate 40A be transferred substrate 11A and separate.Similar with first execution mode, be transferred formation electron supplying layer and the electron injecting layer 15DE and second electrode 16 on the substrate 11A by for example evaporation coating method.In this way, organic luminescent device 10R, 10G and 10B have been formed.
Similar with first execution mode, after forming organic luminescent device 10R, 10G and 10B, on organic luminescent device 10R, 10G and 10B, form the diaphragm 17 of above-mentioned material.After this, on diaphragm 17, form knitting layer 20, and be bonded together with diaphragm 17 across the hermetic sealing substrate 30 that knitting layer 20 will be formed with chromatic filter.Therefore, finished display shown in Figure 1.
Second execution mode
Figure 14 illustrates the structure of the donor substrate 40B of second embodiment of the invention.Except being provided with between matrix 41 and the photothermal transformation layer 42 the hot interfering layer 46, donor substrate 40B have with first execution mode in the identical structure of structure of donor substrate 40.Therefore, identical Reference numeral is used to represent essentially identical element, and has omitted explanation.
Make matrix 41, photothermal transformation layer 42, thermal insulation layer 43, bulge-structure 44 and anti-contamination layer 45 according to the mode identical with first execution mode.
Thermal insulation layer 46 has improved in the photothermal transformation layer 42 absorptivity to laser LB.Thermal insulation layer 46 for example has the thickness that 15nm is above and 80nm is following, and is made by a-Si.Corresponding with the zone that will form red light luminescent layer 15CR, green luminescence layer 15CG and blue light-emitting 15CB (light-emitting zone 13A) on being transferred substrate 11A, arrange photothermal transformation layer 42 and hot interfering layer 46.
When making donor substrate 40B, on matrix 41, form hot interfering layer 46 and the photothermal transformation layer 42 that has above-mentioned thickness and make continuously by above-mentioned material, then hot interfering layer 46 and photothermal transformation layer 42 are configured as required form, except these, can make donor substrate 40B according to the mode identical with first execution mode.
Similar with first execution mode, this donor substrate 40B can be used for the manufacture method of display.At this moment, because donor substrate 40B is provided with hot interfering layer 46 between matrix 41 and photothermal transformation layer 42, so in the transfer step shown in Fig. 7 B, improved in the photothermal transformation layer 42 absorption of laser LB and suppressed loss.In addition, can use low-energy laser LB.
In this way, in second execution mode, owing between matrix 41 and photothermal transformation layer 42, be provided with hot interfering layer 46, so improved in the photothermal transformation layer 42 absorption of laser LB and suppressed loss, and can use low-energy laser LB.
The 3rd execution mode
Figure 15 illustrates the structure of the donor substrate 40C of third embodiment of the invention.Donor substrate 40C has stepped construction, hot interfering layer 46 in this stepped construction comprises the plural layer that refraction coefficient differs from one another, and donor substrate 40C is not provided with bulge-structure 44, except these, donor substrate 40C has the identical structure of structure with first execution mode and second execution mode.Therefore, identical Reference numeral is used to represent essentially identical element.
Make matrix 41, photothermal transformation layer 42 and thermal insulation layer 43 according to the mode identical with second execution mode with first execution mode.
As mentioned above, hot interfering layer 46 comprises the plural layer that has different refraction coefficients each other.Particularly, hot interfering layer 46 for example comprises following each layer of arranging successively from matrix 41 sides: thickness is more than the 50nm and below the 200nm and by SiO 2, SiN, SiON or Al 2O 3The first interfering layer 46A that makes; And thickness is that 15nm is above and 80nm following and the second interfering layer 46B that made by a-Si.Therefore, in donor substrate 40C, absorbed radiation effectively such as xenon or krypton photoflash lamp, column Halogen lamp LED (beam halogen lamp) etc. with wide wavelength.
(for example, the first interfering layer 46A and the second interfering layer 46B) refraction coefficient and thickness is adjusted, and makes that the reflectivity in the above continuous wavelength of the 100nm zone of the luminous zone of radiation is below 0.1 with the upper strata to two of hot interfering layer 46.Figure 16 illustrates two kinds of comparisons between the absorption spectrum under the situation, and under first kind of situation, hot interfering layer 46 comprises that thickness is 100nm and by SiO 2 First interfering layer 46A that makes and thickness are the 15nm and the second interfering layer 46B that made by a-Si; Under second kind of situation, hot interfering layer 46 does not comprise the first interfering layer 46A (situation with second interfering layer 46B single layer structure).In typical optical multilayer film, calculate reflectivity (for example, with reference to " Principles of Optics, Max Born and Emil Wolf, 1974 (Pergamon press) " etc.) by reflectivity calculating method.From Figure 16, be understood that, compare in hot interfering layer 46, to have under the situation of the first interfering layer 46A and the second interfering layer 46B stepped construction high absorptivity is arranged in the broad range of wavelengths zone with the situation that is not provided with the first interfering layer 46A in the hot interfering layer 46.
It is absorption spectrum under 15nm or the 35nm situation that Figure 17 illustrates thickness at the second interfering layer 46B.It is absorption spectrum under 200nm or the 100nm situation that Figure 18 illustrates thickness at the first interfering layer 46A.Be understood that from Figure 16～Figure 18 when making the varied in thickness of the first interfering layer 46A or the second interfering layer 46B, absorption spectrum just changes.
In this way, according to the luminescent spectrum of the radiation that will use, thereby the structure that can optimize hot interfering layer 46 obtains maximum absorbance.For example, the radiation of xenon lamp or xenon flash lamp etc. mainly comprises the luminous zone from about 400nm to 1000nm.Therefore, being understood that from Figure 17, is 100nm and by SiO when hot interfering layer 46 has thickness 2When first interfering layer 46A that makes and thickness were the stepped construction of the 15nm and the second interfering layer 46B that made by a-Si, the transmissivity in the above continuous wavelength of the 100nm of above-mentioned luminous zone zone was below 0.1.In the case, when the first interfering layer 46A has thickness more than the 50nm and below the 100nm and the second interfering layer 46B when having thickness more than the 15nm and below the 22nm, obtained the effect similar to the effect of Figure 17.
For example, the infrared radiant heat of Halogen lamp LED etc. mainly has glow peak from about 900nm to 1600nm according to colour temperature.Therefore, being understood that from Figure 18, is 200nm and by SiO when hot interfering layer 46 comprises thickness 2When first interfering layer 46A that makes and thickness were the stepped construction of the 35nm and the second interfering layer 46B that made by a-Si, the transmissivity in the above continuous wavelength of the 100nm of above-mentioned luminous zone zone was below 0.1.In the case, when the first interfering layer 46A has thickness more than the 150nm and below the 250nm and the second interfering layer 46B when having thickness more than the 35nm and below the 80nm, obtained the effect similar to the effect of Figure 18.
Utilize the stepped construction of hot interfering layer 46, there is no need bulge-structure 44 is set in donor substrate 40C, and anti-contamination layer 45 forms on the surface of thermal insulation layer 43 continuously.Therefore, structure and the manufacture method of donor substrate 40C have been simplified.
When making donor substrate 40C, on matrix 41, form continuously and have after above-mentioned thickness and the first interfering layer 46A that makes by above-mentioned material, the second interfering layer 46B and the photothermal transformation layer 42, the first interfering layer 46A, the second interfering layer 46B and photothermal transformation layer 42 are configured as reservation shape, except these, make donor substrate 40C according to the mode identical with first execution mode.
Donor substrate 40C for example can be used in the manufacturing method of display device that the following describes.
Similar with first execution mode, on driving substrate 11, form first electrode 13, insulating barrier 14 and hole injection layer and hole transporting layer 15AB, be transferred substrate 11A thereby form.
Then, prepare a plurality of donor substrate 40C, and on each donor substrate 40C, form the transfer printing layer of any one color in red, green or the blue transfer printing layer 50 by for example vacuum deposition method.
Then, use donor substrate 40C to form red light luminescent layer 15CR, green luminescence layer 15CG or blue light-emitting 15CB by printing transferring method.That is to say that as shown in figure 19, for example when forming red light luminescent layer 15CR, the transfer printing layer 50 on donor substrate 40C is facing to being transferred substrate 11A.At this moment, similar with first execution mode, be provided with projection 14A (with reference to Fig. 4 A～Fig. 4 C) owing to be transferred the insulating barrier 14 of substrate 11A, therefore between donor substrate 40C and insulating barrier 14, formed space G.As shown in Figure 8, donor substrate 40C and insulating barrier 14 are not in contact with one another.Therefore, suppressed because contacting and in the organic layer 15 that is deposited, produce step between donor substrate 40C and the insulating barrier 14, avoided the deterioration in image quality that causes owing to isolychn etc. simultaneously.
Then, as shown in figure 19,,, transfer printing layer 50 distillations or gasification be transferred on the substrate 11A thereby being transferred to transfer printing layer 50 from the rear side illumination radiation line R of donor substrate 40C.Therefore, formed red light luminescent layer 15CR.At this moment, as shown in figure 20, can use xenon flash lamp to implement plane graph as radiation R.Selectively, as shown in figure 21, can use wire harness RB and on the direction of arrow A 5, move this wire harness RB and implement linear graph, in this wire harness RB, assemble Halogen lamp LED as radiation R by optical system.
Here, hot interfering layer 46 comprises the first interfering layer 46A and the second interfering layer 46B that has different refraction coefficients each other.Therefore, when the luminous zone of foundation radiation R is adjusted the reflectivity of hot interfering layer 46, improved that the radiation R that exposes on the donor substrate 40C is absorbed by photothermal transformation layer 42 and the absorptivity when converting heat to.Therefore, absorbed radiation R effectively, and suppressed loss with wide wavelength.In addition, reduced the energy that is used for transfer printing significantly.
At this moment since in hot interfering layer 46 absorbed radiation line R effectively, therefore reduced the thermal diffusion in the anti-contamination layer 45, although and anti-contamination layer 45 do not separate and can carry out transfer printing with high accuracy with bulge-structure 44.
In this way, in the 3rd execution mode, because hot interfering layer 46 has the first interfering layer 46A that refraction coefficient differs from one another and the stepped construction of the second interfering layer 46B, therefore improved wide wavelength radiation R absorptivity and suppressed loss, and reduced the energy that is used for transfer printing significantly.
In the 3rd execution mode, the situation that is formed with anti-contamination layer 45 on thermal insulation layer 43 surfaces that bulge-structure 44 is not set continuously has been described.Yet, as shown in figure 22, can also on thermal insulation layer 43, be formed with bulge-structure 44, and the 45A of first of anti-contamination layer 45 and second portion 45B are separated by bulge-structure 44.
Embodiment
The following describes specific embodiments of the invention.
Embodiment 1
Make display according to the mode identical with first execution mode.At first, on glass driving substrate 11, form thick high polyimides projection 14A and hole injection layer and the hole transporting layer 15AB of polyimide insulative layer 14,5 μ m of ITO first electrode, 13,1 μ m, be transferred substrate 11A thereby form.Form this hole injection layer and hole transporting layer 15AB by evaporation coating method.The m-MTDATA hole injection layer has the thickness of 25nm, and α-NPD hole transporting layer has the thickness of 30nm.
Then, make donor substrate 40 (with reference to Fig. 5).On glass basis 41, form thick chromium (Cr) photothermal transformation layer 42 of 200nm by sputtering method.It is wide and have a bar shape for example by photoetching method this photothermal transformation layer 42 to be configured as 100 μ m.Then, form the thick SiO of 300 μ m by the CVD method 2Thermal insulation layer 43.Form the thick bulge-structure 44 that constitutes by above-mentioned material of 3 μ m.This bulge-structure 44 is shaped as bar shape, and has the back taper cross section.
After this, form thick molybdenum (Mo) anti-contamination layer 45 of 150nm.
On donor substrate 40, form the thick transfer printing layer 50 of 25nm (with reference to Fig. 7 A) by evaporation coating method.
Then, be transferred arrangement donor substrate 40 (with reference to Fig. 7 B) on the substrate 11A.At donor substrate 40 and be transferred between the substrate 11A, keep the space G of about 2 μ m height.Difference in height between the high bulge-structure 44 of projection 14A that the highly corresponding 5 μ m of this 2 μ m are high and 3 μ m.At this moment, be the laser LB of 800nm from the rear side illumination wavelength of donor substrate 40, and transfer printing layer 50 is transferred to is transferred substrate 11A and goes up (with reference to Fig. 7 B).The beam spot size of laser LB is fixed to 100 μ m * 20 μ m.Laser LB with the direction of long side direction (the fabric width 100 μ m) quadrature of beam spot size on scan.
By repeating above-mentioned steps, form red light luminescent layer 15C, green luminescence layer 15G and blue light-emitting 15B, form electron supplying layer and the electron injecting layer 15DE and second electrode 16 by evaporation coating method then.Electron supplying layer is by Alq 3Make and have the thickness of 20nm.Electron injecting layer is made and is had the thickness of 0.3nm by LiF (evaporation rate is 0.01nm/sec).Second electrode 16 is made and is had the thickness of 10nm by MgAg.After this, form diaphragm 17 and knitting layer 20, and adhere to hermetic sealing substrate 30.Therefore, finished display.
As a comparative example 1, shown in Figure 23 A, formed donor substrate 840, in this donor substrate 840, between photothermal transformation layer 842 and thermal insulation layer 843, be provided with aluminium (Al) reflector 846 comprehensively.By using donor substrate 840, make display according to the mode identical with embodiment 1.At this moment, the thickness of 100nm is made and is had in reflector 846 by aluminium (Al).
Confirm the luminance of display in embodiment 1 and the comparative example 1 by visualization.In embodiment 1, do not confirm colour mixture with adjacent pixels.Yet, in comparative example 1, confirmed colour mixture with adjacent pixels.In embodiment 1 and comparative example 1, studied the width of the luminescent layer of institute's transfer printing.Its result is shown in the table 1.
Table 1
There is or do not exist bulge-structure Colour mixture with adjacent pixels With the postradiation transfer printing width of 100 μ m width
Embodiment
1 Exist Do not observe 105μm
Comparative example 1 Do not exist Observe 122μm
Arrive as can be understood from Table 1, when being made as 100 μ m by the long limit (fabric width) with beam spot size when coming irradiating laser, the width of the institute's transfer printing luminescent layer among the embodiment 1 is 105 μ m, and the width of the institute's transfer printing luminescent layer in the comparative example 1 is 122 μ m.Compare with comparative example 1, the transfer printing precision of embodiment 1 increases substantially.
Its reason can be done following consideration.In the donor substrate 840 of comparative example 1 shown in Figure 23 A, when with the whole surface of laser LB irradiation, shown in the arrow A 2 of Figure 23 B, laser LB layer 846 reflection that are reflected in the zone that is not formed with photothermal transformation layer 842.On the other hand, in the zone that is formed with photothermal transformation layer 842, laser LB is absorbed by photothermal transformation layer 842, and only the needed scope 850B in the transfer printing layer 850 is transferred to and is transferred on the substrate.Yet, in the donor substrate 840 of comparative example 1, as arrow A 3 produced heat conduction in the reflector that is shown in 846.Therefore, the organic material that is used for transfer printing layer 850 is melted and profile takes place lax.So the not only needed scope 850B in the transfer printing layer 850, and unwanted scope (do not need be transferred zone) 850A also is transferred.Therefore, reduced transfer printing precision and colour mixture with adjacent pixels occurred.
That is to say, comprise 45A of first that is formed on bulge-structure 44 end faces and the second portion 45B that is formed on thermal insulation layer 43 end faces when anti-contamination layer 45, and when 45A of first and second portion 45B are separated from each other, reduced thermal diffusion significantly, and the required scope in the transfer printing layer 50 has been carried out transfer printing with high accuracy by anti-contamination layer 45.
Embodiment 2 and embodiment 3
Make display according to the mode identical with the 3rd execution mode.At this moment, in embodiment 2, use xenon flash lamp, and describe by face shown in Figure 20 and to implement transfer step as radiation R.The structure of donor substrate 40C is as follows.
Matrix 41: glass
Hot interfering layer 46: by thickness is the SiO of 100nm 2The first interfering layer 46A and thickness are the stacked stepped construction of the a-Si second interfering layer 46B of 15nm
Photothermal transformation layer 42: thickness is the titanium (Ti) of 200nm
Thermal insulation layer 43: thickness is the SiO of 300nm 2
Anti-contamination layer 45: thickness is the aluminium (Al) of 50nm
In embodiment 3, the wire harness RB that utilizes optical system that Halogen lamp LED is assembled is used as radiation R, and writes by line drawing shown in Figure 21 and to implement transfer step.The structure of donor substrate 40C is as follows.
Matrix 41: glass
Hot interfering layer 46: by thickness is the SiO of 200nm 2The first interfering layer 46A and thickness are the stacked stepped construction of the a-Si second interfering layer 46B of 35nm
Photothermal transformation layer 42: thickness is the titanium (Ti) of 200nm
Thermal insulation layer 43: thickness is the SiO of 300nm 2
Anti-contamination layer 45: thickness is the aluminium (Al) of 50nm
As a comparative example 2 and comparative example 3, except first interfering layer (single layer structure that second interfering layer is only arranged) is not set, make display according to the mode identical with embodiment 2 and embodiment 3 in donor substrate.
Studied the irradiation energy of the radiation R that in embodiment 2 and embodiment 3 and comparative example 2 and comparative example 3, uses.Its result is shown in table 2 and the table 3.
Table 2 uses the situation of photoflash lamp
There is or do not exist first interfering layer Essential energy density (J/cm 2)
Embodiment 2 Exist 40
Comparative example 2 Do not exist 320
Table 3 uses the situation (2800K) of Halogen lamp LED
There is or do not exist first interfering layer Essential energy density (w/cm 2)
Embodiment 3 Exist 400
Comparative example 3 Do not exist 70
Be understood that from table 2 and table 3, have among the embodiment 2 and embodiment 3 of the stacked stepped construction of the first interfering layer 46A that differs from one another by refraction coefficient and the second interfering layer 46B at hot interfering layer 46, compare with comparative example 3 with the comparative example 2 that first interfering layer is not set and reduced irradiation energy significantly.That is to say, when hot interfering layer 46 has the stacked stepped construction of the first interfering layer 46A that differed from one another by refraction coefficient and the second interfering layer 46B, reduced the necessary energy that is used for transfer printing significantly.
Module and application examples
Below, the application examples of the display that illustrates in first～the 3rd execution mode is described.The display of each execution mode is applicable to such as the display in the electronic installation of every field such as portable terminal such as television set, digital camera, notebook computer, mobile phone or video camera, and these displays are showing as picture or image from the picture signal of installing outside input or in the inner picture signal that produces of device.
Module
For example, module as shown in figure 24, the display of each execution mode is installed in after a while in the various electronic installations etc. of application examples 1～application examples 5 of explanation.This module for example is provided with zone 210, and a side until driving substrate 11 is exposed from hermetic sealing substrate 30 and knitting layer 20 in this zone 210.In the zone 210 of exposing, thereby the wiring of signal-line driving circuit 120 and the wiring of scan line drive circuit 130 are prolonged formation external connection terminals (not shown).In this external connection terminals, can be provided with the flexible print circuit (flexible printedcircuit, FPC) 220 that are used for input/output signal.
Application examples 1
Figure 25 illustrates the outward appearance of the television set of having used each execution mode display.This TV set device for example comprises the image display panel 300 that contains front panel 310 and filter glass 320.Image display panel 300 is formed by the display architectures of each execution mode.
Application examples 2
Figure 26 A and Figure 26 B illustrate the outward appearance of the digital camera of having used each execution mode display.This digital camera for example comprises flash of light luminous component 410, display 420, menu switch 430 and shutter release button 440.Display 420 is formed by the display architectures of each execution mode.
Application examples 3
Figure 27 illustrates the outward appearance of the notebook computer of having used each execution mode display.This notebook computer for example comprises main body 510, be used for literal etc. input operation keyboard 520 and be used for the display 530 of display image.Display 530 is formed by the display architectures of each execution mode.
Application examples 4
Figure 28 illustrates the outward appearance of the video camera of having used each execution mode display.This video camera for example comprises main body 610, is used for the lens 620 of shot object, the beginning/shutdown switch 630 that is used to take and display 640.Display 640 is formed by the display architectures of each execution mode.
Application examples 5
Figure 29 A～Figure 29 G illustrates the outward appearance of the mobile phone of having used each execution mode display.In this mobile phone, for example upper body 710 is connected with lower case 720 by link (hinge) 730.This mobile phone comprises display 740, slave display 750, picture lamp 760 and camera 770.Display 740 and slave display 750 are formed by the display architectures of each execution mode.
More than, by execution mode and embodiment the present invention has been described.Yet, the invention is not restricted to the above-described embodiment and examples, and can make various distortion.For example, in execution mode and embodiment, the situation of irradiation such as laser or photoflash lamp israds in transfer step has been described.Yet, also can use such as hot pin and heat head (thermal head) and wait the radiation of other light source to shine.
In the respective embodiments described above, the situation that forms whole R, G and B luminescent layer 15C by printing transferring method has been described.Yet, as shown in figure 30, only form red light luminescent layer 15CR and green luminescence layer 15CG by printing transferring method after, can on whole surface, deposit blue light-emitting 15CB by evaporation coating method.At this moment, in organic luminescent device 10R, although be formed with red light luminescent layer 15CR and blue light-emitting 15CB, energy shifts and occurs in the ruddiness place with lowest energy level, and red light-emitting is dominant.In organic luminescent device 10G, although be formed with green luminescence layer 15CG and blue light-emitting 15CB, energy shifts and occurs in the green glow place with lowest energy level, and green luminescence is dominant.In organic luminescent device 10B,, therefore produce blue light emitting owing to only be formed with blue light-emitting 15CB.
For example, the illuminate condition of material of each layer and thickness, deposition process, sedimentary condition and laser be not limited to illustrate in the above-described embodiment and examples those.Other material and thickness also are fine.Other deposition process, sedimentary condition and illuminate condition also are fine.For example, first electrode 13 can comprise the dielectric multilayer film.
For example, although illustrated in each execution mode on driving substrate 11 from driving substrate 11 sides and stack gradually first electrode 13, organic layer 15 and second electrode 16 and draw the situation of light from hermetic sealing substrate 30 sides, lamination order also can be a reverse order.In the case, can be on driving substrate 11, to stack gradually second electrode 16, organic layer 15 and first electrode 13, and draw light from these driving substrate 11 sides from driving substrate 11 sides.
For example, although in each execution mode, illustrated first electrode 13, also anode and negative electrode can be exchanged as anode and with the situation of second electrode 16 as negative electrode.In the case, can with first electrode 13 as negative electrode and with second electrode 16 as anode.In addition, can with first electrode 13 as negative electrode and with second electrode 16 as anode, and on driving substrate 11, stack gradually second electrode 16, organic layer 15 and first electrode 13 from driving substrate 11 sides.So, draw light from these driving substrate 11 sides.
In each execution mode,, be not always to comprise whole layers, and can further comprise other layer although understand the layer structure of organic luminescent device 10R, 10G and 10B as mentioned above specifically.For example, between first electrode layer 13 and organic layer 15, can be provided with by chromated oxide (III) (Cr 2O 3), ITO (indium tin oxide: the oxide hybrid films of indium (In) and tin (Sn)) or the hole that constitutes of other similar materials inject thin layer.
Although the situation that second electrode 16 is configured to the half transmitting electrode and the light that luminescent layer 15C is produced is drawn from second electrode, 16 sides has been described in each execution mode, also the light that is produced can be drawn from first electrode, 13 sides.In the case, second electrode 16 preferably has sufficiently high reflectivity to improve luminous efficiency.
In addition, although the situation of Active Matrix Display has been described in each execution mode, the present invention also is applicable to passive matrix display.The structure that is used to drive the pixel-driving circuit of active matrix is not limited to those aspects of the respective embodiments described above explanation, if necessary can add electric capacity or transistor.In this case, except signal-line driving circuit 120 and scan line drive circuit 130, also can add necessary drive circuit according to the variation in the pixel-driving circuit with above-mentioned explanation.
Although describe the present invention, the invention is not restricted to those, and can make various modifications with reference to execution mode and variation.
It will be appreciated by those skilled in the art that according to designing requirement and other factors, can in the scope of the appended claim of the present invention or its equivalent, carry out various modifications, combination, inferior combination and change.

Claims (9)

1. donor substrate that when forming luminescent layer, uses, described luminescent layer forms as follows: form the transfer printing layer that contains luminescent material, make described transfer printing layer and be transferred substrate mutually in the face of and with irradiation with radiation to described transfer printing layer, thereby and make described transfer printing layer distillation or gasification that described transfer printing layer is transferred to described being transferred on the substrate
Described donor substrate comprises:
Matrix;
Be arranged in the photothermal transformation layer on the described matrix; And
Be arranged in the hot interfering layer between described matrix and the described photothermal transformation layer, described hot interfering layer comprise that refraction coefficient differs from one another two is with the upper strata.
2. donor substrate as claimed in claim 1, wherein, in the described hot interfering layer two are adjusted to the reflectivity that makes in the above continuous wavelength of the 100nm zone of the luminous zone of described radiation with the refraction coefficient on upper strata and thickness is below 0.1.
3. donor substrate as claimed in claim 2, wherein, described hot interfering layer comprises following each layer of arranging successively from described matrix side:
Thickness is more than the 50nm and below the 250nm and by SiO 2, SiN, SiON or Al 2O 3First interfering layer that constitutes; And
Second interfering layer that thickness is that 15nm is above and 80nm following and is made of a-Si.
4. donor substrate as claimed in claim 1, wherein, described photothermal transformation layer is arranged to described being transferred with described hot interfering layer will form the regional corresponding of described luminescent layer on the substrate.
5. donor substrate as claimed in claim 4, it comprises:
Be formed on the thermal insulation layer on described photothermal transformation layer and the described matrix; And
Be formed on the anti-contamination layer on the described thermal insulation layer.
6. donor substrate as claimed in claim 5 wherein, is formed with bulge-structure in the zone that described photothermal transformation layer and described hot interfering layer are not set on described thermal insulation layer, and
Described anti-contamination layer comprises the first on the end face that is formed on described bulge-structure and is formed on second portion on the end face of described thermal insulation layer, and described first and described second portion are separated from each other.
7. manufacturing method of display device, in described display, on driving substrate, be formed with organic luminescent device, described organic luminescent device comprises successively first electrode arranged, have insulating barrier, the multilayer organic layer that comprises luminescent layer and second electrode with the corresponding peristome of light-emitting zone of described first electrode
Described manufacturing method of display device comprises the steps:
On described driving substrate, form a part of organic layer of described first electrode, described insulating barrier and described multilayer organic layer, form thus and be transferred substrate;
In donor substrate, form the transfer printing layer that contains luminescent material, described transfer printing layer and the described substrate that is transferred are faced and the illumination radiation line mutually, thereby and make described transfer printing layer distillation or gasification that described transfer printing layer is transferred to described being transferred on the substrate, form luminescent layer thus; And
Form the remainder and described second electrode of described multilayer organic layer,
Wherein said donor substrate comprise matrix, be arranged in the photothermal transformation layer on the described matrix and be arranged in described matrix and described photothermal transformation layer between hot interfering layer, described hot interfering layer comprise that refraction coefficient differs from one another two is with the upper strata.
8. manufacturing method of display device as claimed in claim 7, wherein, in the described hot interfering layer two are adjusted to the reflectivity that makes in the above continuous wavelength of the 100nm zone of the luminous zone of described radiation with the refraction coefficient on upper strata and thickness is below 0.1.
9. manufacturing method of display device as claimed in claim 8, wherein, described hot interfering layer comprises following each layer of arranging successively from described matrix side:
Thickness is the above and 250nm of 50nm and by SiO 2, SiN, SiON or Al 2O 3First interfering layer that constitutes; And
Second interfering layer that thickness is that 15nm is above and 80nm following and is made of a-Si.
CN2009101486355A 2008-06-25 2009-06-25 Donor substrate and method of manufacturing display Expired - Fee Related CN101615658B (en)

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CN111725423A (en) * 2020-06-10 2020-09-29 武汉华星光电半导体显示技术有限公司 OLED device, preparation method thereof and display device
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