CN101613106A - Poly plant - Google Patents
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- CN101613106A CN101613106A CN200910150342A CN200910150342A CN101613106A CN 101613106 A CN101613106 A CN 101613106A CN 200910150342 A CN200910150342 A CN 200910150342A CN 200910150342 A CN200910150342 A CN 200910150342A CN 101613106 A CN101613106 A CN 101613106A
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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Abstract
Poly plant of the present invention in supply has the Reaktionsofen (1) of unstripped gas, makes polysilicon separate out surface at the silicon plug by heating silicon plug (4).Poly plant of the present invention has electrode (23), electrode bracket (22), reaches ring-type insulating material (34).Electrode extends along the vertical direction and keeps the silicon plug.Electrode bracket inside is formed with the cooling flowing path (27) that makes heat-eliminating medium circulation, and inserts in the through hole (21) on the base plate (2) that is formed on Reaktionsofen, keeps electrode.The ring-type insulating material is configured between the periphery of the inner peripheral surface of through hole and electrode bracket, makes electrically insulation between base plate and the electrode bracket.And in poly plant of the present invention, the periphery of electrode bracket is provided with wide diameter portion (25), and this wide diameter portion contacts with at least a portion of the upper surface of the upper end of ring-type insulating material, and portion has formed the part of cooling flowing path within it.
Description
Technical field
The present invention relates to a kind of poly plant, the silicon mandrel surface after heating is separated out polysilicon and is made the bar of polysilicon.
The present invention is to the opinion right of priority of the Japanese patent application of Japanese patent application 2008-164298 number of on June 24th, 2008 application and application on June 5th, 2009 2009-135831 number, and quotes its content.
Background technology
In the past, as poly plant, the known technology that adopts Siemens Method.In poly plant by Siemens Method, in Reaktionsofen, be equipped with a plurality of silicon plugs, after the silicon plug heating in the Reaktionsofen, supply with the unstripped gas that the mixed gas by chlorosilane gas and hydrogen constitutes in this Reaktionsofen, the silicon plug after making it and heating contacts.And the polysilicon that thermolysis and hydrogen reduction by unstripped gas are produced is separated out on the surface of silicon plug.
In such poly plant, the silicon plug that becomes crystal seed is established on the electrode that state is fixed on the inner bottom part that is provided in Reaktionsofen with upright.And, give the energising of silicon plug from this electrode, make the heating of silicon plug by its resistance.At this moment, make from the unstripped gas of below ejection to contact, form the bar of polysilicon with the silicon mandrel surface.In the roughly all zones of the inner bottom surface of Reaktionsofen, be provided with the electrode of this silicon plug of a plurality of maintenances dispersedly, as described in patent documentation 1, be arranged on the state that is surrounded by the cyclic insulating material in the through hole of base plate of Reaktionsofen (opening the 2007-107030 communique) with reference to the Japanese Patent spy.
In above-mentioned poly plant, the highest high temperature that becomes 500～600 ℃ of gas temperature in the Reaktionsofen.Therefore, the electrode bracket of maintenance electrode makes the water coolant circulation and cools off in inside.But the base plate and the insulating material between the electrode bracket that are arranged on Reaktionsofen can not directly cool off, and therefore are subjected to the interior heat of Reaktionsofen and shape damage easily, become the reason of insulation function deterioration easily.At this moment, when using the insulating material of ceramic-like, might cause breakage because of base plate that can not the absorption reaction stove and the thermal expansion difference of electrode bracket.
Summary of the invention
The present invention proposes in view of such problem, and its purpose is to provide a kind of poly plant, the base plate that can the absorption reaction stove and the thermal expansion difference of electrode bracket, and can keep good insulation performance.
Poly plant of the present invention in the Reaktionsofen of having supplied with unstripped gas, makes polysilicon separate out surface at the silicon plug by heating silicon plug.Poly plant of the present invention has electrode, electrode bracket, reaches the ring-type insulating material.Electrode extends along the vertical direction and keeps above-mentioned silicon plug.Electrode bracket inside is formed with the cooling flowing path that makes heat-eliminating medium circulation, and inserts in the through hole on the base plate that is formed on above-mentioned Reaktionsofen, keeps above-mentioned electrode.The ring-type insulating material is configured between the periphery of the inner peripheral surface of above-mentioned through hole and above-mentioned electrode bracket, makes electrically insulation between above-mentioned base plate and the above-mentioned electrode bracket.And, in poly plant of the present invention, the periphery of above-mentioned electrode bracket is provided with wide diameter portion, and this wide diameter portion contacts with at least a portion of the upper surface of the upper end of above-mentioned ring-type insulating material, and portion has formed the part of above-mentioned cooling flowing path within it.
The ring-type insulating material of state that is the base plate of insertion reaction stove, the inside of the upper surface orientating reaction stove of its upper end.Thus, if the ring-type insulating material keeps from the state that exposes in Reaktionsofen between the inner peripheral surface of through hole and the electrode bracket, then from the radiant heat of the silicon plug in the Reaktionsofen etc. via between the inner peripheral surface of through hole and the electrode bracket and act directly on the upper end of ring-type insulating material.In the present invention, by being arranged on the electrode bracket with the wide diameter portion that at least a portion of the upper surface of the upper end of ring-type insulating material contacts, therefore the electrode bracket burden can reduce the radiant heat that acts directly on the ring-type insulating material towards the radiant heat of this upper surface.And, because heat-eliminating medium also circulates, therefore can improve the cooling performance of ring-type insulating material in wide diameter portion.
And in poly plant of the present invention, above-mentioned wide diameter portion preferably covers the above-mentioned upper surface integral body of the above-mentioned upper end of above-mentioned ring-type insulating material.
At this moment, wide diameter portion is set, covers radiant heat from Reaktionsofen by wide diameter portion by mode with the upper surface integral body of the upper end that covers the ring-type insulating material, therefore can be more effectively from radiant heat protection ring-type insulating material.And, cool off the upper surface integral body of the upper end of ring-type insulating material by wide diameter portion, therefore, can more effectively prevent the shape of ring-type insulating material or the deterioration of insulation function.
And in poly plant of the present invention, best above-mentioned heat-eliminating medium cools off near the above-mentioned electrode after having cooled off above-mentioned wide diameter portion.
At this moment, after the wide diameter portion of the heat-eliminating medium cooling raio lower temperature that in electrode bracket, circulates again near the electrode of cooling raio higher temperatures, thereby wide diameter portion can be maintained low temperature, therefore can prevent more effectively that the ring-type insulating material from becoming high temperature.
And in poly plant of the present invention, best above-mentioned cooling flowing path has outer circumferential side stream and interior all effluents road, and the part of above-mentioned outer circumferential side stream is formed in the above-mentioned wide diameter portion.The outer circumferential side stream makes in the peripheral part of above-mentioned heat-eliminating medium in above-mentioned electrode bracket and circulates towards its upper end along its length direction.Interior all effluents road makes above-mentioned heat-eliminating medium circulate towards the bottom of above-mentioned electrode bracket along above-mentioned length direction in the inboard of above-mentioned outer circumferential side stream.
At this moment, after the circulation of upper end, side circulates towards the bottom within it, can efficient up to the upper end electrode bracket be cooled off well thus in the peripheral part of heat-eliminating medium in electrode bracket.
And in poly plant of the present invention, above-mentioned ring-type insulating material preferably is made of the rubber-like resin.At this moment, prevent the breakage of the ring-type insulating material that the thermal expansion difference by base plate and electrode bracket causes, and absorb the thermal expansion difference of base plate and electrode bracket, prevent the displacement of silicon plug or the breakage of the polysilicon of separating out by the ring-type insulating material.
According to poly plant of the present invention; be arranged on the radiant heat of wide diameter portion blocking on the electrode bracket from the silicon plug to the ring-type insulating material; and cooling ring-type insulating material; therefore; can be effectively protection ring-type insulating material under the hot conditions when coming from reaction, can keep the insulativity and the elasticity of ring-type insulating material well.Thus,, can use synthetic resins etc., can guarantee the insulation between base plate and the electrode and can absorb thermal expansion difference etc., viability that can holdout device integral body as this ring-type insulating material.
Description of drawings
Fig. 1 is the stereographic map that cuts after the part of bonnet of Reaktionsofen.
Fig. 2 is the sectional view of Reaktionsofen shown in Figure 1.
Fig. 3 illustrates the amplification view of one silicon plug of Reaktionsofen shown in Figure 2 with electrode unit.
Fig. 4 illustrates the amplification view of two silicon plug of Reaktionsofen shown in Figure 2 with the integral part of electrode unit.
Description of reference numerals
1 Reaktionsofen
2 base plate
4 silicon plugs
5,5A, 5B electrode unit
21 through holes
22,46 electrode brackets
23,47 electrodes
25,45 wide diameter portions
27,40 cooling flowing paths
27A, 40A outer circumferential side stream
All effluents road in 27B, the 40B
34 ring-type insulating material
Embodiment
An embodiment of poly plant of the present invention is described below with reference to the accompanying drawings.
Fig. 1 is the overall diagram of the poly plant that is suitable for of the present invention.The Reaktionsofen 1 of this poly plant possesses: base plate 2 constitutes furnace bottom; And the bonnet 3 that hangs bell shape, dismounting is freely on this base plate 2 of mount pad.The upper surface of base plate 2 forms the horizontal plane of general planar.Bonnet 3 becomes as a whole and hangs bell shape, and zenith is a dome-type, so its internal space forms, and central part is the highest, peripheral part is minimum.And the wall of base plate 2 and bonnet 3 is cannula configuration (diagram slightly), is cooled by water coolant.
Be respectively arranged with on base plate 2: a plurality of electrode units 5 are equipped with silicon plug 4; A plurality of jetting nozzles (gas vent) 6, the unstripped gas that is used for comprising chlorosilane gas and hydrogen is ejected in the stove; And a plurality of gas discharge outlets 7, be used for reacted gas is expelled to outside the stove.
With can be, in the roughly all zones of the upper surface of the base plate 2 of Reaktionsofen 1, disperse and separate the jetting nozzle 6 that is properly spaced and is provided with a plurality of unstripped gases for each silicon plug 4 mode of base feed gas equably.These jetting nozzles 6 are connected with the unstripped gas supply source 8 of the outside of Reaktionsofen 1.And, near the peripheral part on the base plate 2, on Zhou Fangxiang, be provided with to devices spaced apart a plurality of gas discharge outlets 7 aptly, and be connected with the exhaust-gas treatment system 9 of outside.Power source circuit 10 is connected with electrode unit 5.Base plate 2 becomes cannula configuration, and portion is formed with cooling flowing path (diagram slightly) within it.
The states that silicon plug 4 inserts in the electrode unit 5 with the bottom are fixed, and establish thereby stand upward with extending, in per two paired banded modes wherein, the binding parts 12 of a short size are installed in the upper end.This links parts 12 and is also formed by silicon in the same manner with silicon plug 4.By two silicon plugs 4 and their binding parts 12 of binding, be combined as crystal seed molectron 13 for ∏ word shape as a whole (word of falling U shape).Because electrode unit 5 disposes from the centres of Reaktionsofen 1 circle shape ground, so crystal seed molectron 13 is concentric circles roughly apart from the center configuration of Reaktionsofen 1.
Particularly, as shown in Figure 2, in Reaktionsofen 1,, be equipped with one the silicon plug electrode unit 5A that keeps a silicon plug 4, two the silicon plug electrode unit 5B that reaches two silicon plugs 4 of maintenance as above-mentioned electrode unit 5.
As shown in Figure 2, these silicon plugs of can be connected for example three groups of crystal seed molectrons 13 with electrode unit 5B with two silicon plug with electrode unit 5A as a units in series ground.At this moment, from unitary row end, one one silicon plug gets final product with such series arrangement with electrode unit 5A with electrode unit 5A, two two silicon plug electrode unit 5B, one one silicon plug.At this moment, to stride upright mode three groups of crystal seed molectrons 13 are set between four electrode unit 5A, 5B.The two silicon plugs 4 that keep a crystal seed molectron 13 by adjacent different electrode respectively.
That is, keep in two silicon plugs 4 of crystal seed molectron 13 one on electrode unit 5A, the silicon plug 4 of two groups of crystal seed molectrons 13 is respectively kept one on electrode unit 5B at two silicon plugs at one silicon plug.And supply lead is connected with electrode unit 5A with one the silicon plug at row two ends, flows through electric current.At this moment, two silicon plugs with electrode unit 5B in, flow through electric current (with reference to Fig. 4) between two electrodes 47 via arm 42.
Electrode is two kinds by making like this, two the silicon plug electrode unit 5B that one the silicon plug that keeps a silicon plug 4 is used electrode unit 5A and kept two silicon plugs 4 is set, compare with the situation of one of whole maintenance, can reduce electrode unit number (for example about 2/3).The electrode unit number also can reduce the through hole on the base plate 2 that is formed on Reaktionsofen 1 after a little while like this, can keep base plate 2 and be rigid construction.And, can keep many silicon plugs 4 with few electrode unit number, therefore many silicon plugs 4 can be set in Reaktionsofen 1, can improve productivity.And, because the electrode unit number is few, also can reduce the cooling tubing and the supply lead of the below that is configured in base plate 2, improve its upkeep operation.
Then, explain the structure of each electrode unit.
At first, one the silicon plug electrode unit 5A that keeps a silicon plug 4 is described.As shown in Figure 3, electrode unit 5A comprises electrode bracket 22, electrode 23.Be formed on the state of the through hole 21 on the base plate 2 of Reaktionsofen 1 with insertion, electrode bracket 22 is set, electrode 23 is arranged on the upper end of this electrode bracket 22, keeps silicon plug 4.
As shown in Figure 3, electrode bracket 22 forms bar-shaped by electro-conductive materials such as stainless steels.The bar portion 24 of linearity, the wide diameter portion 25 of hollow disc shape, outer screw section 26 form electrode bracket 22 with becoming one.The bar portion 24 of linearity inserts in the through hole 21 along above-below direction.The wide diameter portion 25 of hollow disc shape forms and electrode bracket 22 coaxial shapes, is arranged on the upper end of the bar portion 24 of linearity, and is bigger than these bar portion 24 diameters.In wide diameter portion 24 inside, be formed with circular space 25a with electrode bracket 22 coaxial shape ground, space 25a is bigger than these bar portion 24 diameters.Outer screw section 26 is further outstanding upward from the upper surface of this wide diameter portion 25.And, below bar portion 24, be formed with outer screw section 28 from base plate 2 outstanding positions.
At the periphery of inner core 30, with the corresponding position of internal space 25a of wide diameter portion 25 in, generally perpendicularly be provided with annular plate 31 with inner core 30.By this annular plate 31, the circulating direction of the heat-eliminating medium that circulates in periphery effluent road 27A is directed to the space 25a in the wide diameter portion 25.On the periphery of inner core 30, with outer screw section 28 corresponding positions in, along the axis direction of inner core 30, extend the tabular liner 32 at the interval of the periphery be provided with the inner peripheral surface of guaranteeing electrode bracket 22 and inner core 30.
On the other hand, making electrode bracket 22 is line part 21A for through hole 21 bottoms of the base plate 2 of insertion state, and top becomes upward the tapering 21B of hole enlargement gradually.Its internal diameter of line part 21A forms greatlyyer than the external diameter of the bar portion 24 of electrode bracket 22.Thus, around this bar portion 24, be formed with the cyclic space.Tapering 21B for example forms the pitch angle for 5 °～15 ° of Z-axises.Upper end open portion at tapering 21B is formed with the spot-facing portion 33 that also wants hole enlargement than the maximum inner diameter of this tapering 21B.
Between the bar portion 24 of the inner peripheral surface of this through hole 21 and electrode bracket 22, be provided with ring-type insulating material 34 round electrode bracket 22.This ring-type insulating material 34 is by for example being that fluorine-type resin of representative etc., the dystectic insulating resin of rubber-like form with polytetrafluoroethylene (PTFE), fe fluon (PFA).Ring-type insulating material 34 comprises the flanged pin sleeve 35 among the line part 21A that inserts through hole 21 and is configured in tapering part 36 these two parts of the tapering 21B of through hole 21.For example as the employed PTFE of the material of ring-type insulating material 34, fusing point (ASTM specification: D792) be 327 ℃, crooked elastic rate (ASTM specification: D790) be 0.55GPa, tensile elasticity rate (ASTM specification: D638) be 0.44～0.55GPa, linear expansivity (ASTM specification: be 10 * 10 D696)
-5/ ℃.
Tapering part 36 forms the taper that its outside surface and the inner peripheral surface of the tapering 21B of through hole 21 are identical angle of inclination.Tapering part 36 inserts through hole 21 from the top of base plate 2, with the internal surface butt of this tapering 21B.The upper surface butt of the lower surface of the wide diameter portion 25 of electrode bracket 22 and the upper end of this tapering part 36.Wide diameter portion 25 its external diameters be set at the maximum outside diameter of tapering part 36, be the upper end upper surface external diameter about equally, cover the entire upper surface of tapering part 36 (ring-type insulating material 34).In addition, the lateral distance of wide diameter portion 25 and spot-facing portion 33 enough away from for can not be short-circuited the time, can make the external diameter of wide diameter portion 25 bigger slightly than the external diameter of the upper surface of the upper end of tapering part 36 in order to improve cooling performance.With respect to this, when the lateral distance of wide diameter portion 25 and spot-facing portion 33 is near,, can make the external diameter of wide diameter portion 25 slightly littler than the external diameter of the upper surface of the upper end of tapering part 36 in order to prevent short circuit.
Be respectively arranged with O type ring 43 at the periphery of tapering part 36 and the interior perimembranous of upper surface.By these O type rings 43, keep between tapering part 36 and electrode bracket 22 and the base plate 2 resistance to air loss, be the resistance to air loss in the through hole 21 of Reaktionsofen 1.
Flanged pin sleeve 35 with the mode of the integrally formed flange part in its bottom 37 with the back side butt of the base plate 2 of Reaktionsofen 1, be inserted among the line part 21A.The upper surface of flange part 37 is by the nut 38 of the outer screw section 28 that screws in electrode bracket 22 and the back side of pushing base plate 2.Between the lower surface and nut 38 of flange part 37, dispose annular gasket 39a, disk spring 39b, annular gasket 39a in turn.Utilize nut 38 with the upper surface of flange part 37 when base plate 2 pushings, realize suitable pressure by butterfly spring 39b.Annular gasket 39a is preferably stainless steel (SUS304) system, and disk spring 39b is stainless steel (SUS631) system preferably.
Therefore by fastening this nut 38, the interval of wide diameter portion 25 and nut 38 diminishes, for base plate 2 electrode bracket 22 that stretches downwards, clamping ring-type insulating material 34 between wide diameter portion 25 and nut 38.And by its holding force, the periphery of tapering part 36 is pressed against on the inner peripheral surface of tapering 21B of through hole 21, and these ring-type insulating material 34 and electrode bracket 22 are fixing integratedly with base plate 2.At this moment, Yi Bian confirm the height location (from the surface of base plate 2 outstanding height) of lower surface of the wide diameter portion 25 of electrode bracket 22, Yi Bian make the bottom of wide diameter portion 25 and base plate 2 approaching.At this moment, the screw-in amount of setting nut 38, prevent the bottom of wide diameter portion 25 and base plate 2 near and between them, produce electric short circuit.
By the recoverable deformation of disk spring 39b and ring-type insulating material 34 (resinous flanged pin sleeve 35 and tapering part 36), allow relatively moving of above-below direction between electrode bracket 22 and the base plate 2.Thus, absorb the thermal expansion difference of electrode bracket 22 and base plate 2.
In this stationary state, the upper end of the tapering part 36 of ring-type insulating material 34 than the upper end of the tapering 21B of through hole 21 outstanding slightly upward and with spot-facing portion 33 in face.Therefore, the external diameter of tapering part 36 upper ends is set greatlyyer than the maximum outside diameter of tapering 21B, makes its upper end outstanding and outstanding upward unlike the upper end of spot-facing portion 33 from the bottom surface of spot-facing portion 33.
On the other hand, electrode 23 forms cylindric by carbon etc.Electrode 23 bottoms have the negative thread portion 43 of the outer screw section 26 that screws in electrode bracket 22, and its upper end has with the fixing hole 23a of silicon plug 4 of insertion state, and hole 23a forms along the axle center.
The cooling flowing path 27 of the silicon plug that is formed among the electrode unit 5A is described.As shown in Figure 3, the influx 27a of the bottom of heat-eliminating medium by being arranged on electrode bracket 22 flows into outer circumferential side stream 27A, upward circulation.And heat-eliminating medium is by annular plate 31 guiding, after the space 25a circulation wide diameter portion 25 in, the inside of arrival outer screw section 26, is near the electrode 23.Heat-eliminating medium is full of in periphery effluent road 27A when contacting with the upper end internal surface of electrode bracket 22, flows in inner core 30 from the peristome 30a of the upper end that is arranged on inner core 30.Thereafter, heat-eliminating medium in the inside of inner core 30, promptly in all effluents road 27B circulate downwards, flow out to the outside of electrode bracket 22 from the spout 127B of the bottom that is arranged on inner core 30.That is, heat-eliminating medium is circulation period in periphery effluent road 27A, behind the wide diameter portion 25 of cooling raio lower temperature, near the electrode 23 of cooling raio higher temperatures, discharges from electrode bracket 22 by interior all effluents road 27B.
Two silicon plug electrode unit 5B is described.In Fig. 4, amplify two silicon plug electrode unit 5B is shown.Two silicon plug with electrode unit 5B on electrode 47 this point that constitute the upper end that possesses the electrode bracket 46 in the through hole 21 that is arranged on the insertion state on the base plate 2 that is formed at Reaktionsofen 1 and be arranged on this electrode bracket 46, be with one silicon plug with the identical structure of electrode unit 5A.But two silicon plug is that electrode bracket 46 is divided into the structure that 2 strands, its both ends are provided with electrode 47 respectively in the upper end with electrode unit 5B, and this point is different with electrode unit 5A with one silicon plug.
The electrode bracket 46 of electrode unit 5B is for being shaft-like bar portion 41 and the structure integrally formed with the vertical arm in the upper end of this bar portion 41 42.Electrode bracket 46 is formed by electro-conductive materials such as stainless steels.In the length direction half-way of bar portion 41 wide diameter portion 45 of hollow and annular is installed, and, be formed with in the outstanding position of lower surface and the identical outer screw section 46a of outer screw section 28 first embodiment from the base plate 2 of bar portion 41.
About the through hole 21 (line part 21A, tapering 21B) that becomes the base plate 2 of inserting these electrode bracket 46 states, be formed on the spot-facing portion 33 of the upper end open portion of this tapering 21B, the inner peripheral surface that is arranged on through hole 21 and electrode bracket 46 bar portion 41 between ring-type insulating material 34 (flanged pin sleeve 35, tapering part 36), the nut part 38 that screws with the outer screw section 46a of bar portion 41, and annular gasket 39a etc., owing to have identical structure and effect with one silicon plug with electrode unit 5A, in this description will be omitted.
The arm 42 of electrode bracket 46 from the upper end of bar portion 41 respectively to the left and right direction flatly extend, thereby become the T word with bar portion 41.On arm 42, connect its both ends, left and right sides respectively in vertical direction and be formed with the female threaded hole 42a that electrode 47 is screwed.Electrode 47 screws with this female threaded hole 42a and exposes on arm 42 tops.Positive nut part 44 is installed on the base end part of the electrode on the arm 42 47.Nut part 44 forms cylindric, and perimembranous is formed with the negative thread portion that screws with electrode 47 within it.Nut part 44 is preferably formed by carbon etc.
On arm 42, be formed with: linearity internal space 42b, direction is extended to the left and right; And circular-arc internal space 42c, the periphery of each female threaded hole 42a is surrounded C word shape, is communicated with above-mentioned linearity internal space 42b respectively.Linearity internal space 42b is divided up and down by the 3rd division plate 48C.
The upper space of the bar portion 41 of electrode bracket 46 is divided into leftward space 41c and rightward space 41d by the 2nd division plate 48B that is connected with the 3rd division plate 48C.Be connected the axis direction approximate vertical of the 1st division plate 48A and bar portion 41 and dividing up and down in the bar portion 41 with discoideus the 1st division plate 48A in the lower end of the 2nd division plate 48B.On the 1st division plate 48A, only be formed with through hole 48a in the right openings of the 2nd division plate 48B.And, in bar portion 41, being formed with, the 1st peristome 41a is arranged on the below of the 1st division plate 48A; And the 2nd peristome 41b, be arranged on the top of the 1st division plate 48A and for the 1st peristome 41a 180 ° of opposition sides of axis across bar portion 41.
And, at the lower surface of the 1st division plate 48A, inner core 49 roughly being installed coaxial shape with bar portion 41, this inner core 49 is communicated with rightward space 41d by through hole 148A.This inner core 49 is divided into outer circumferential side space (outer circumferential side stream 40A) and interior all sides space (interior all effluents road 40B) with the inside of bar portion 41 below the 1st division plate 48A.
By constituting two silicon plug electrode unit 5B in this wise, in electrode bracket 46, the outer circumferential side stream 40A that is formed with based on bar portion 41 bottoms reaches interior all effluents road 40B, the annulus 45b of wide diameter portion 45, leftward space 41c, the rightward space 41d on bar portion 41 tops, the linearity space 42b of arm 42 and the cooling flowing path 40 of circular-arc space 42c on bar portion 41 tops.
In cooling flowing path 40, heat-eliminating medium flows into the outer circumferential side stream 40A that forms between the inner peripheral surface of the periphery of inner core 49 and bar portion 41 from the bottom of electrode bracket 46, circulation upward.When arriving the 1st division plate 48A, heat-eliminating medium is covered by the 1st division plate 48A, flows into by the annulus 45b of the 1st peristome 41a in wide diameter portion 45.Behind the heat-eliminating medium cooling wide diameter portion 45, by the 2nd peristome 41b to the left side of the upside of the 1st division plate 48A and the 2nd division plate 48B, be leftward space 41c circulation.
The heat-eliminating medium that flows into of space 41c to the left is directed to the circular-arc internal space 42c in left side from the lower left quarter of the linearity internal space 42b of arm 42 by the 2nd division plate 48B and the 3rd division plate 48C.Thereafter, heat-eliminating medium is in the 42b of linearity internal space, in the upside circulation of the 3rd division plate 48C, by the circular-arc internal space 42c on right side, by the right lower quadrant guiding to linearity internal space 42b.Heat-eliminating medium is in the meantime near the cooling electrode 47.And heat-eliminating medium circulates at rightward space 41d along the 2nd division plate 48B, when arriving the 1st division plate 48A, and in the interior all effluents road 40B in the through hole 148A inflow inner core 49, and from electrode bracket 46 discharges.
In the poly plant that constitutes like this, from each electrode unit 5 (electrode unit 5A, electrode unit 5B) when silicon plug 4 energising, silicon plug 4 becomes the resistance heating state, even and each other at each silicon plug 4, also be subjected to radiant heat from adjacent silicon plug 4, be heated mutually, they interact and become the condition of high temperature.The unstripped gas that contacts with the surface of the silicon plug 4 of this condition of high temperature is reacted and is separated out polysilicon.
Also act on from the radiant heat of this silicon plug 4 on each electrode unit 5A, the 5B on the base plate 2 of Reaktionsofen 1, thus for heat-proof ring-type insulating material 34 not because the part of upper end is exposed the influence that also may be subjected to heat in spot-facing portion 33.But as shown in Figures 3 and 4, because configuration has covered the wide diameter portion 25 of electrode bracket 22 and the wide diameter portion 45 of electrode bracket 46 respectively on the upper surface of the upper end of this ring-type insulating material 34, therefore, the radiant heat that acts directly on this upper surface tails off.And electrode bracket 22,46 is cooled by the heat-eliminating medium at internal circulation, so ring-type insulating material 34 is also cooled off effectively.Especially, heat-eliminating medium circulates in the volume inside of the wide diameter portion 25,45 of the upper surface that is arranged at the upper end that covers ring-type insulating material 34, thereby has cooled off ring-type insulating material 34 effectively.
Like this, in pyritous Reaktionsofen 1 in, also suppress ring-type insulating material 34 because of pyritous distortion or deterioration etc., keep its elasticity, therefore, can absorb the thermal distortion of each parts, can suppress the effect of stress, can suitably keep the function of equipment.
In addition, the present invention is not limited to the structure of above-mentioned embodiment, in concrete part-structure, can add various changes in the scope that does not break away from purport of the present invention.
For example, the wide diameter portion of electrode bracket might not cover the upper surface integral body of the upper surface of ring-type insulating material, as long as can prevent the degree of the distortion of ring-type insulating material or deterioration etc., also can be set to cover at least a portion of above-mentioned upper surface.
And in the above-described embodiment, cooling flowing path only is provided with a system, but also can be provided for cooling off the cooling flowing path of wide diameter portion respectively and be used near the cooling flowing path of cooling electrode.
More than, most preferred embodiment of the present invention has been described, but the present invention is not limited to these embodiment.In the scope that does not break away from purport of the present invention, can carry out interpolation, omission, displacement, and other changes of structure.The present invention is not limited to above-mentioned explanation, is only limited by additional claims.
Claims (5)
1. a poly plant in the Reaktionsofen of having supplied with unstripped gas, separates out on the surface of silicon plug polysilicon by heating silicon plug, it is characterized in that,
Have:
Electrode extends the above-mentioned silicon plug of maintenance along the vertical direction;
Electrode bracket, inside are formed with the cooling flowing path that makes heat-eliminating medium circulation, and insert in the through hole on the base plate that is formed on above-mentioned Reaktionsofen, keep above-mentioned electrode;
The ring-type insulating material is configured between the periphery of the inner peripheral surface of above-mentioned through hole and above-mentioned electrode bracket, makes electrically insulation between above-mentioned base plate and the above-mentioned electrode bracket,
The periphery of above-mentioned electrode bracket is provided with wide diameter portion, and this wide diameter portion contacts with at least a portion of the upper surface of the upper end of above-mentioned ring-type insulating material, and portion is formed with the part of above-mentioned cooling flowing path within it.
2. poly plant as claimed in claim 1 is characterized in that, above-mentioned wide diameter portion covers the above-mentioned upper surface integral body of the above-mentioned upper end of above-mentioned ring-type insulating material.
3. poly plant as claimed in claim 1 or 2 is characterized in that, above-mentioned heat-eliminating medium cools off near the above-mentioned electrode after having cooled off above-mentioned wide diameter portion.
4. as any described poly plant in the claim 1 to 3, it is characterized in that, above-mentioned cooling flowing path has: the outer circumferential side stream makes in the peripheral part of above-mentioned heat-eliminating medium in above-mentioned electrode bracket and circulates towards its upper end along its length direction; And interior all effluents road, above-mentioned heat-eliminating medium is circulated towards the bottom of above-mentioned electrode bracket along above-mentioned length direction in the inboard of above-mentioned outer circumferential side stream, the part of above-mentioned outer circumferential side stream is formed in the above-mentioned wide diameter portion.
5. as any described poly plant in the claim 1 to 4, it is characterized in that above-mentioned ring-type insulating material is made of the rubber-like resin.
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| JP2008164298 | 2008-06-24 | ||
| JP2008164298 | 2008-06-24 | ||
| JP2008-164298 | 2008-06-24 | ||
| JP2009-135831 | 2009-06-05 | ||
| JP2009135831A JP5444860B2 (en) | 2008-06-24 | 2009-06-05 | Polycrystalline silicon production equipment |
| JP2009135831 | 2009-06-05 |
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Cited By (2)
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| CN102219218A (en) * | 2010-03-19 | 2011-10-19 | 瓦克化学股份公司 | Conical graphite electrode with raised edge |
| CN110182813A (en) * | 2019-06-12 | 2019-08-30 | 厦门佰事兴新材料科技有限公司 | The maintaining method of electrode for reduction furnace |
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| KR101116594B1 (en) * | 2011-10-11 | 2012-03-16 | (주)일진에너지 | Electrode for high power system |
| KR101458739B1 (en) * | 2014-02-19 | 2014-11-05 | 서경수 | Electrode bar for manufacturing polysilicon |
| US11217433B2 (en) * | 2018-10-05 | 2022-01-04 | Applied Materials, Inc. | Rotary union with mechanical seal assembly |
| JP7263172B2 (en) * | 2019-07-25 | 2023-04-24 | 信越化学工業株式会社 | Polycrystalline silicon manufacturing equipment |
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| JP2001278611A (en) | 2000-03-31 | 2001-10-10 | Mitsubishi Materials Polycrystalline Silicon Corp | Method of producing polycrystalline silicon and apparatus therefor |
| JP2001294416A (en) | 2000-04-07 | 2001-10-23 | Mitsubishi Materials Polycrystalline Silicon Corp | Device for producing polycrystalline silicon |
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| CN102219218A (en) * | 2010-03-19 | 2011-10-19 | 瓦克化学股份公司 | Conical graphite electrode with raised edge |
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| KR101620635B1 (en) | 2016-05-12 |
| KR20100002123A (en) | 2010-01-06 |
| CN101613106B (en) | 2013-05-29 |
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