CN101595636B - Rf放大装置 - Google Patents
Rf放大装置 Download PDFInfo
- Publication number
- CN101595636B CN101595636B CN2007800506736A CN200780050673A CN101595636B CN 101595636 B CN101595636 B CN 101595636B CN 2007800506736 A CN2007800506736 A CN 2007800506736A CN 200780050673 A CN200780050673 A CN 200780050673A CN 101595636 B CN101595636 B CN 101595636B
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- line
- line transformer
- input
- amplifier
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 230000003321 amplification Effects 0.000 title abstract description 18
- 238000003199 nucleic acid amplification method Methods 0.000 title abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims abstract description 31
- 238000004891 communication Methods 0.000 claims abstract description 26
- 230000009471 action Effects 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 2
- 102100024025 Heparanase Human genes 0.000 description 26
- 101001047819 Homo sapiens Heparanase Proteins 0.000 description 26
- 102100024022 Inactive heparanase-2 Human genes 0.000 description 25
- 101710133360 Inactive heparanase-2 Proteins 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 19
- 241001125929 Trisopterus luscus Species 0.000 description 11
- 102100039384 Huntingtin-associated protein 1 Human genes 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 101710088570 Flagellar hook-associated protein 1 Proteins 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 101100074846 Caenorhabditis elegans lin-2 gene Proteins 0.000 description 5
- 101100497386 Mus musculus Cask gene Proteins 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 2
- 101710088566 Flagellar hook-associated protein 2 Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 241001539443 Octavius Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/207—A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/456—A scaled replica of a transistor being present in an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/462—Indexing scheme relating to amplifiers the current being sensed
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/465—Power sensing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/537—A transformer being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007019129 | 2007-01-30 | ||
JP019129/2007 | 2007-01-30 | ||
PCT/JP2007/074387 WO2008093477A1 (ja) | 2007-01-30 | 2007-12-19 | Rf増幅装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101595636A CN101595636A (zh) | 2009-12-02 |
CN101595636B true CN101595636B (zh) | 2012-10-31 |
Family
ID=39673793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800506736A Expired - Fee Related CN101595636B (zh) | 2007-01-30 | 2007-12-19 | Rf放大装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7928802B2 (zh) |
EP (1) | EP2131492B1 (zh) |
JP (1) | JP4896996B2 (zh) |
CN (1) | CN101595636B (zh) |
WO (1) | WO2008093477A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8175556B2 (en) * | 2009-12-09 | 2012-05-08 | Apple Inc. | Methods for optimizing power amplifier settings for operation at different radio-frequency bands |
US8427257B2 (en) * | 2011-02-11 | 2013-04-23 | M/A-Com Technology Solutions Holdings, Inc. | Broadside-coupled transformers with improved bandwidth |
US9679869B2 (en) * | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
KR20190058711A (ko) | 2012-06-14 | 2019-05-29 | 스카이워크스 솔루션즈, 인코포레이티드 | 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법 |
US8760134B2 (en) * | 2012-08-01 | 2014-06-24 | Fairchild Semiconductor Corporation | Simulating power supply inductor current |
US9130535B2 (en) | 2012-12-20 | 2015-09-08 | Qualcomm Incorporated | Driver amplifier with asymmetrical T-coil matching network |
US9948249B2 (en) * | 2013-06-27 | 2018-04-17 | Nxp Usa, Inc. | Integrated matching circuit for a high frequency amplifier |
WO2015067985A1 (en) * | 2013-11-07 | 2015-05-14 | Freescale Semiconductor, Inc. | Adjustable losses of bond wire arrangement |
US9537452B2 (en) * | 2014-04-29 | 2017-01-03 | Skyworks Solutions, Inc. | Broadband power amplifier systems and methods |
US9431963B2 (en) * | 2014-09-19 | 2016-08-30 | Qualcomm Incorporated | Dual stage low noise amplifier for multiband receiver |
CN105337581B (zh) * | 2015-05-21 | 2018-12-04 | 络达科技股份有限公司 | 一种提高功率放大电路稳定性的方法 |
CN104935287B (zh) * | 2015-06-26 | 2018-01-30 | 英特尔公司 | 射频接收器及其电感耦合单端输入差分输出低噪声放大器 |
US11148886B2 (en) | 2015-07-24 | 2021-10-19 | Eidon, Llc | System and method for peristaltic transport of material |
US10091606B2 (en) * | 2015-11-18 | 2018-10-02 | Honeywell International Inc. | System and method of enrolling sensors with a control panel using a mobile device |
US10177722B2 (en) | 2016-01-12 | 2019-01-08 | Qualcomm Incorporated | Carrier aggregation low-noise amplifier with tunable integrated power splitter |
CN113037223B (zh) * | 2021-03-31 | 2023-01-24 | 广东工业大学 | 一种具有二次谐波抑制的宽带差分射频功率放大器 |
CN114844477B (zh) * | 2022-03-31 | 2023-07-14 | 电子科技大学 | 一种三频带微带功率放大器 |
WO2023203858A1 (ja) * | 2022-04-22 | 2023-10-26 | 株式会社村田製作所 | 高周波回路および通信装置 |
CN114785286B (zh) * | 2022-04-28 | 2023-11-28 | 电子科技大学 | 一种超宽带的无源下变频混频器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2091044U (zh) * | 1990-11-02 | 1991-12-18 | 梁文华 | 一种专用发射机 |
CN1130822A (zh) * | 1994-09-16 | 1996-09-11 | 株式会社日立制作所 | 带有微波功率放大器的单片集成电路器件 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2558997B1 (fr) * | 1984-01-31 | 1989-02-03 | Thomson Csf | Amplificateur correcteur du temps de propagation de groupe de signaux electriques et chaine d'amplification a frequence intermediaire de faisceaux hertziens comportant un tel amplificateur |
JPS60235513A (ja) * | 1984-05-08 | 1985-11-22 | Nec Corp | 増幅回路 |
JPH06260864A (ja) * | 1993-03-08 | 1994-09-16 | Matsushita Electric Ind Co Ltd | 送信出力増幅器 |
JPH0878994A (ja) * | 1994-08-30 | 1996-03-22 | Daihen Corp | インピ−ダンス整合回路 |
JPH1141042A (ja) | 1997-07-17 | 1999-02-12 | Mitsubishi Electric Corp | マイクロ波増幅器 |
JP2000244264A (ja) * | 1999-02-24 | 2000-09-08 | Hitachi Ltd | 高周波電力増幅装置 |
JP2001007657A (ja) | 1999-04-21 | 2001-01-12 | Hitachi Ltd | 高周波電力増幅装置および無線通信機 |
US6463267B1 (en) * | 1999-04-21 | 2002-10-08 | Hitachi, Ltd. | High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages |
JP2001217659A (ja) | 2000-02-03 | 2001-08-10 | Mitsubishi Electric Corp | マイクロ波増幅器 |
WO2002073794A2 (en) * | 2001-03-09 | 2002-09-19 | California Institute Of Technology | Switchless multi-resonant, multi-band power amplifier |
US20020146993A1 (en) * | 2001-04-04 | 2002-10-10 | Charles Persico | Bias adjustment for power amplifier |
JP4075438B2 (ja) * | 2002-04-08 | 2008-04-16 | 日本電気株式会社 | 信号増幅器および集積回路 |
JP4047640B2 (ja) * | 2002-06-25 | 2008-02-13 | 京セラ株式会社 | 多層回路基板 |
TW200518345A (en) * | 2003-08-08 | 2005-06-01 | Renesas Tech Corp | Semiconductor device |
EP1612932A1 (en) | 2004-06-23 | 2006-01-04 | Wavics, Inc. | Multiple power mode amplifier with bias modulation option and without bypass switches |
JP4858952B2 (ja) * | 2005-05-23 | 2012-01-18 | 株式会社日立国際電気 | 増幅装置 |
JP4485487B2 (ja) * | 2006-05-11 | 2010-06-23 | シャープ株式会社 | 電力増幅器 |
TWI344263B (en) * | 2008-01-25 | 2011-06-21 | Univ Nat Taiwan | Low-noise amplifier |
-
2007
- 2007-12-19 WO PCT/JP2007/074387 patent/WO2008093477A1/ja active Application Filing
- 2007-12-19 EP EP07850860A patent/EP2131492B1/en not_active Not-in-force
- 2007-12-19 US US12/524,970 patent/US7928802B2/en not_active Expired - Fee Related
- 2007-12-19 JP JP2008556018A patent/JP4896996B2/ja not_active Expired - Fee Related
- 2007-12-19 CN CN2007800506736A patent/CN101595636B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2091044U (zh) * | 1990-11-02 | 1991-12-18 | 梁文华 | 一种专用发射机 |
CN1130822A (zh) * | 1994-09-16 | 1996-09-11 | 株式会社日立制作所 | 带有微波功率放大器的单片集成电路器件 |
Also Published As
Publication number | Publication date |
---|---|
EP2131492A4 (en) | 2010-04-14 |
EP2131492A1 (en) | 2009-12-09 |
JPWO2008093477A1 (ja) | 2010-05-20 |
JP4896996B2 (ja) | 2012-03-14 |
US7928802B2 (en) | 2011-04-19 |
EP2131492B1 (en) | 2012-07-18 |
CN101595636A (zh) | 2009-12-02 |
US20100090767A1 (en) | 2010-04-15 |
WO2008093477A1 (ja) | 2008-08-07 |
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