CN101593798A - Contain high light-emitting diode of transparent base material with gradual change type refractive index or thermal diffusivity and application - Google Patents
Contain high light-emitting diode of transparent base material with gradual change type refractive index or thermal diffusivity and application Download PDFInfo
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Abstract
Contain high light-emitting diode of transparent base material with gradual change type refractive index or thermal diffusivity and application.The present invention relates to a kind of lamination of forming by the transparent material of tool gradual change type refractive index that comprises, can be used as the bearing substrate of light-emitting component.In addition, the lamination formed of the transparent material of tool gradual change type refractive index of the present invention also can be used as the heat-conducting layer of light-emitting component.
Description
Technical field
The present invention relates to a kind of lamination of forming by the transparent material of tool gradual change type refractive index that comprises, can be used as the bearing substrate of light-emitting component.In addition, the lamination formed of the transparent material of tool gradual change type refractive index of the present invention also can be used as the heat-conducting layer of light-emitting component.
Background technology
Light-emitting diode (Light-Emitting Diode, LED) be a kind of by the made light-emitting component of semi-conducting material, this element has two electrodes, after applying voltage between electrode and feeding minimum electric current, combination via electrons/, dump energy can be disengaged with the form of light, this is the basic principle of luminosity of light-emitting diode.
Be different from general incandescent lamp bulb, light-emitting diode belongs to chemiluminescence, it is low to have power consumption, component life is long, need not advantages such as warm lamp time and reaction speed be fast, it is little to add its volume, vibration resistance, be easy to volume production, the demand of fit applications is made the characteristic of the element of minimum or array easily, make light-emitting diode be widely used in information, communication, on consumption electronic products and the general daily necessities, and become critical elements indispensable in the daily life, for example, can be used in optical display, the traffic signals sign, data memory device, communication device, lighting device and medical treatment device etc.
Light-emitting diode can be divided into visible light emitting diode (wavelength 450 to 680 nanometers) and invisible light light-emitting diode (wavelength 850 to 1550 nanometers) two big classes according to emission wavelength, wherein, visible light emitting diode can be divided into GaP/GaAsP series LED, AlGaAs series LED, AlGaInP series LED and GaN series LED generally.With regard to this type of skill, one of present most important problem is the brightness that how to improve light-emitting diode.Many at present is developing direction to promote lumination of light emitting diode efficient or to improve input power.Promote lumination of light emitting diode efficient, will promote light-emitting diode internal quantum and light and take out efficient; And the raising input power then must solve heat dissipation problem.
The luminous efficiency of light-emitting diode must see through increase internal quantum (internal quantumefficiency) takes out efficient (light extraction efficiency) two aspects with light and promote, and comprises the improvement of p-n junction (p-n junction) luminescent layer efficient, advances with each side technology such as different substrate and/or various crystal growing technologies etc.The luminosity of light-emitting diode and luminous efficiency are all directly related with epitaxial film materials, and its external quantum efficiency (luminous efficiency that is equivalent to light-emitting diode) is
External quantum efficiency (luminous efficiency)=internal quantum x light takes out efficient
Hence one can see that, and the method that increases luminous efficiency can promote by the internal quantum of increase light-emitting diode and the light taking-up efficient of light-emitting diode.On behalf of electronic switch, internal quantum become the usefulness of photon, it focuses on adjusting the quality of ray structure layer extension, light takes out efficient and then is correlated with physical phenomenon, when light will be limited in the luminous element because of total reflection effect causes most of light to the process of dredging medium from close medium, absorb through luminescent layer repeatedly and to cause light to take out efficient obviously to descend.Therefore, how allowing the light of output can more efficient taking-up, be present instant major tasks.Common technique has with gallium nitride (GaN) substrate or carborundum (SiC) substrate replacement sapphire (sapphire) substrate, to improve internal quantum at present; By different process technology and various die design, see through encapsulating structure and change, or the encapsulating material renewal, take out efficient to improve light.
Present a kind of known technology is to propose by n1=(n0*n2)
1/2Principle to form the structure of anti-reflecting layer, can reduce light source or light signal and cause damage through repeatedly reflecting reflection back and forth.
Another known method discloses the transparent material layer that binds high index of refraction and take out efficient to promote light on the uneven surface of the semiconductor layer that contains luminescent layer.
A known practice changes the refractive index of diamond (diamond) material by doping techniques (doping) with the part again, and this technology can reduce the light reflection and the possibility that makes light source be confined to material diminishes.
In addition, still there is prior art to mention and utilizes SiC, and utilize raising SiC substrate thickness can reduce the light limitation and promote light and take out efficient as the InGaN epitaxial substrate.
Improving aspect the input power, mainly be the development High Power LED in addition, by array of packages (packaged array) or enlarge die-size to improve the light-emitting diode input power.Array of packages is plural LEDs to be arranged in rectangular, and it is packaged into monomer structure, to obtain high light flux.Enlarge die-size generally then by 0.2～0.35 millimeter square tube core, expand as square chip greater than 0.8 millimeter, and with high current drives, to obtain high light flux output.
In addition, from the luminous efficiency of current chip level reckoning light-emitting diode, it is different with different materials that its internal quantum and light take out efficient.Wherein, ruddiness is because the epitaxial material refractive index is about 3.3, because refractive index difference is excessive, causing light to take out efficient does not cite, can effectively promote light by transparent carrier and take out efficient, but the capacity of heat transmission of transparent carrier is not good at present usually, that is at high temperature have the not good problem of reliability.
Summary of the invention
The present invention finds the lamination formed by the transparent material of gradual change type refractive index, during as the bearing substrate of light-emitting component, can reduce repeatedly refraction reflection in luminous element of light, avoids the light limitation and is absorbed in the luminous element, takes out efficient thereby effectively promote light.Utilize the transparent material of multilayer refractive index match to make up to promote light and take out efficient, its emphasis is set at the correlated condition of the transparent material of the ground floor of following with luminescent layer, for example thickness must be greater than certain limit, and this design can be done the optimization enforcement of correlation combiner via the technology adjustment.In addition, the transparent material of gradual change type refractive index can have high-termal conductivity matter simultaneously by selecting mode such as certain material, when directly contacting with epitaxial loayer, can avoid producing focus (hot spot), makes chip have more reliability in the high current density operating process.
Therefore, the invention provides a kind of lamination of being formed by the gradual change type refractive index transparent material and/or the light-emitting diode and the application thereof of tool high-termal conductivity matter.
The present invention relates to the lamination that a kind of transparent material with gradual change type refractive index is formed, can be used as the bearing substrate of light-emitting component, it comprises:
Transparency carrier;
The transparent material lamination is formed at the one side of transparency carrier, and wherein transparent material is the combination of materials of gradual change type refractive index, and the thickness of the ground floor transparent material of following with transparency carrier is not less than about 3 μ m, and transparent material lamination and transparency carrier are formed bearing substrate;
The reflector is formed at the another side of transparency carrier; And
Luminescent layer is formed on the lamination that the transparent material of gradual change type refractive index forms.
In a specific embodiment of the present invention, the refractive index of transparency carrier must be less than arbitrary layer of transparent material.
In a specific embodiment of the present invention, its transparent material is combined as by becoming big transparent material gradually from the ground floor refractive index of transparent materials of following with transparency carrier and is made up.
In another specific embodiment of the present invention, transparency carrier is selected from the group that sapphire (n～1.7) and other alternative materials are formed.
In another specific embodiment of the present invention, transparent material is selected from the group that diamond (n～2.4) and other alternative materials are formed.
In another specific embodiment of the present invention, the reflector is selected from the group that metal and other alternative materials are formed.
In another specific embodiment of the present invention, the thickness of transparency carrier is about 100 μ m～300 μ m.
In another specific embodiment of the present invention, the thickness of transparent material is preferably about 20 to 30 μ m greater than about 3 μ m.
The invention still further relates to the lamination that a kind of transparent material with gradual change type refractive index is formed, can be used as the bearing substrate of light-emitting component, it comprises:
Transparency carrier;
Be formed at the transparent material layer at least on the transparency carrier, wherein transparent material is the combination of materials of gradual change type refractive index, and the ground floor thickness of following with transparency carrier is not less than about 3 μ m, and transparent material and transparency carrier composition bearing substrate;
Be formed at the reflector on the bearing substrate; And
Be formed at the luminescent layer of the another side of transparency carrier.
In a specific embodiment of the present invention, the refractive index of transparency carrier must be greater than arbitrary layer of transparent material.
In a specific embodiment of the present invention, its transparent material is combined as by the transparent material that diminishes gradually from the ground floor refractive index of transparent materials of following with transparency carrier and is made up.
In another specific embodiment of the present invention, transparency carrier is selected from the group that SiC (n～2.7) and other alternative materials are formed.
In another specific embodiment of the present invention, transparent material is selected from the group that diamond (n～2.4), tin indium oxide (n～2), sapphire (n～1.7), glass (n～1.5) and other alternative materials are formed.
In another specific embodiment of the present invention, the reflector is selected from the group that metal and other alternative materials are formed.
In another specific embodiment of the present invention, the thickness of transparency carrier is about 100 to 300 μ m.
In another specific embodiment of the present invention, the thickness of transparent material is preferably about 20 to 30 μ m greater than about 3 μ m.
The present invention is in addition also about a kind of optical element of tool high thermal conductivity layer, and it comprises:
Substrate;
Be formed at the reflector on the substrate;
Be formed at the transparent membrane on the reflector, wherein the thickness of transparent membrane is not less than about 15 μ m, and reflector and transparent membrane form the lamination that the transparent material of tool gradual change type refractive index is formed; And
Be formed at the luminescent layer on the transparent membrane.
In a specific embodiment of the present invention, reflector and transparent membrane form the lamination that the transparent material of tool gradual change type refractive index is formed, and can be used as the heat-conducting layer of optical element.
In a specific embodiment of the present invention, further comprise between reflector and transparent membrane between metal carbide layer and luminescent layer and transparent membrane and further comprise following layer.
In another specific embodiment of the present invention, at least one conducting channel passes between reflector and transparent membrane.
In another specific embodiment of the present invention, at least one conducting channel passes between reflector, metal carbide layer, transparent membrane and following layer.
In a specific embodiment of the present invention, substrate is a silicon substrate.
In another specific embodiment of the present invention, the reflector is DBR.
In another specific embodiment of the present invention, the luminescent layer material is the semiconductor structure of InGaN or AlGaInP.
In another specific embodiment of the present invention, transparent membrane is selected from the group that diamond, pottery, glass, zinc oxide, class diamond and other alternative materials are formed.In another specific embodiment of the present invention, transparent membrane is a diamond film.
In another specific embodiment of the present invention, the thickness of transparent membrane is about 20 to 30 μ m.
The lamination that the present invention is made up of the gradual change type refractive index transparent material and/or the light-emitting diode of tool high thermal conductivity layer can be used as the light emitting source of information, communication, consumption electronic products and general daily necessities etc., for example can be applicable to optical display, traffic signals sign, data memory device, communication device, lighting device and/or medical treatment device etc.
Description of drawings
Figure 1A, 1B, 1C and 1D are the light taking-up schematic diagram according to adjustment light-emitting diode transparency carrier/transparent material thickness of embodiment of the invention I-1.
Fig. 2 is the structural representation according to embodiment of the invention I-2.
Fig. 3 is the structural representation according to embodiment of the invention I-3.
Fig. 4 is for InGaN being the light taking-up efficiency chart of the adjustment transparency carrier/transparent material thickness of luminescent layer.
Fig. 5 is for AlGaInP being the light taking-up efficiency chart of the adjustment transparency carrier/transparent material thickness of luminescent layer.
Fig. 6 is the structural representation according to embodiment of the invention II-1.
Fig. 7 is the structural representation according to embodiment of the invention II-2.
Fig. 8 is the structural representation according to embodiment of the invention II-3.
Fig. 9 is the structural representation according to embodiment of the invention II-4.
Description of reference numerals
1 p type electrode, 2 p type semiconductor layer
3 active layers, 4 n type electrodes
5 p type semiconductor layer, 6 transparent materials
7 transparency carriers, 8 reflector
9 bearing substrates, 10 epitaxial structures
11 silicon carbide layers, 12 transparent materials
15 following layers, 20 high thermal conductivity hyaline layers
25 metal carbide layer, 30 reflector
35 conducting channels, 40 heat-resisting supporting layers
Embodiment
But the following embodiment of the present invention's mat describes its technology contents.
Example I-1
Shown in Figure 1A, at sapphire (sapphire, n=1.7) growth layer of transparent diamond film 6 (diamond film on the substrate 7, n=2.1～2.4), sapphire substrate and transparent diamond film promptly form the lamination that transparent material with gradual change type refractive index is formed, and can be used as the bearing substrate 9 of photoelectric cell.On diamond film, form n type semiconductor layer 5; As n-GaN or n-AlGaInP, on the n type semiconductor layer, form active layer 3; Active layer material can be related semiconductor materials such as InGaN or AlGaInP, forms p type semiconductor layer 2 on active layer; As p-GaN or p-AlGaInP, again respectively at forming n type electrode 4 and p type electrode 1 on n type semiconductor layer and the p type semiconductor layer.Make reflector 8 below sapphire substrate, the reflector can be metallic reflector, dielectric material reflector or organic diffusive reflective layer etc.But as can be seen from the path of light, still there is part light to return active layer through reflective layer reflects, therefore can adjust the path of light by the thickness of adjusting transparency carrier thickness and transparent diamond film, reduce light reflected back active layer, take out efficient to increase light.The two compares as Figure 1B, 1C, and the thickness that increases sapphire substrate can increase light refraction, reduces light reflected back active layer, increases light and takes out efficient.The two compares as Fig. 1 C, 1D, increases the thickness of transparent diamond film, also can increase light refraction, reduces light reflected back active layer, increases light and takes out efficient.
Example I-2
The structural representation of present embodiment such as Fig. 2.In carborundum (SiC, n=2.7) substrate 11 diamond growth film 6, and on diamond film, reduce the outermost refractive index of diamond film by (doping) mechanism of mixing, silicon carbide substrate and transparent diamond film promptly form the lamination that transparent material with gradual change type refractive index is formed, and can be used as the bearing substrate of this element.And on diamond film, make reflector 8,3 of active layers are grown or are formed on another plane of silicon carbide substrate.
Example I-3
The structural representation of present embodiment such as Fig. 3.In carborundum (SiC, n=2.7) substrate 11 diamond growth film 6, and forming the transparent material between one deck n=1.5～2 12 at least by deposition (deposition), coating (coating) or bond (bonding) technology on the diamond film, silicon carbide substrate, transparent diamond film and transparent material promptly form the lamination that transparent material with gradual change type refractive index is formed, and can be used as the bearing substrate of this element.Do reflector 8 afterwards on the transparent material lamination, 3 of active layers are grown or are formed on another plane of silicon carbide substrate.
The luminous measurement mode of light-emitting diode of the present invention
The luminous situation of light-emitting diode of the present invention is used (the InternationalCommission on Illumination of Commission Internationale De L'Eclairage; CIE) formulating light emitting diode (LED) light characteristic standard measurement technology is measured.The measurement result of following gained is to get by ball-type light beam device method (abbreviation integrating sphere).Earlier indoor temperature is remained on 24 to 26 ℃ during measurement, place integrating sphere (as 75mm integrating sphere and importing optical fiber thereof the LED sample ligand behind the glue, measuring range VIS～NIR) measures luminous intensity, luminous power, wavelength, XYZ chromaticity diagram and the angle of divergence thereof of this sample with CAS 140B optical measurement system, Keithley 2400 power supply units and the computer software of being arranged in pairs or groups.
Measurement
Fig. 4 adjusts the graph of a relation of transparency carrier thickness and light taking-up improved efficiency for when the bearing substrate of light-emitting component being the substrate joining formed of the transparent material of tool gradual change type refractive index and light-emitting active layer when being InGaN.From figure, can learn when the process for sapphire-based plate thickness be 100 μ m during to 250 μ m its light to take out improved efficiency limited.Behind the substrate joining that the transparent material that utilizes diamond film to be grown in formation tool gradual change type refractive index on the sapphire substrate is formed, from figure, can obviously find out, at the process for sapphire-based plate thickness is the laminated base plate that 150 μ m and diamond film thickness are formed greater than the transparent material of the gradual change type refractive index of 3 μ m formation, can obviously promote light and take out efficient.Be the laminated base plate that the transparent material of the gradual change type refractive index that forms of 20 μ m is formed for example, can promote light and take out efficient about 16% at process for sapphire-based plate thickness 150 μ m and diamond film thickness; At the process for sapphire-based plate thickness is that 150 μ m and diamond film thickness are the laminated base plate that the transparent material of the gradual change type refractive index that forms of 150 μ m is formed, and can promote light and take out efficient about 37%.This presentation of results is 150 μ m and the lamination bearing substrate of forming greater than the transparent material of the gradual change type refractive index of 3 μ m formation at diamond film thickness at the process for sapphire-based plate thickness, can promote light and take out efficient, therefore can reach the purpose that promotes brightness.
The lamination that the transparent material of this gradual change type refractive index is formed can also be used in the bearing substrate of AlGaInP light-emitting component, and its corresponding light taking-up efficient and diamond film thickness trend are as shown in Figure 5.When diamond film thickness can find that light extraction efficiency has lifting trend during greater than 3 μ m, take out improved efficiency amplitude and will slowly descend along with diamond film thickness increases its light.
Example II-1
The structural representation of present embodiment such as Fig. 6.On heat-resisting supporting layer 40 (thermal supportinglayer) as: silicon, copper, carborundum plate DBR (TiO earlier
2/ SiO
2Sandwich construction) reflector 30 (reflector layer), one deck high thermal conductivity hyaline layer 20 (high thermalconductive transparent layer) again grow on the reflector, its coefficient of heat conduction is greater than 300W/mK, as: transparent diamond film (diamond film, n=2.1～2.4), wherein the thickness of diamond film must make its light taking-up efficient comparatively obvious greater than 15 μ m, form active layer in addition on diamond film, wherein active layer can be related semiconductor epitaxial structures (epitaxy layer) 10 such as InGaN or AlGaInP.Formed the lamination of tool gradual change type refractive index by reflector and high thermal conductivity hyaline layer, taken out the efficient, in this element, also be can be used as high conductive structure except increasing light.
Example II-2
The structural representation of present embodiment such as Fig. 7.On heat-resisting supporting layer 40 (thermal supportinglayer) as: silicon, copper, carborundum plate DBR (TiO earlier
2/ SiO
2Sandwich construction) reflector 30 (reflector layer), one deck high thermal conductivity hyaline layer 20 (high thermalconductive transparent layer) again grow on the reflector, its coefficient of heat conduction is greater than 300W/mK, as: transparent diamond film (diamond film, n=2.1～2.4), wherein the thickness of diamond film must be greater than 15 μ m.Form active layer in addition on diamond film, wherein active layer can be related semiconductor epitaxial structures 10 (epitaxy layer) such as InGaN or AlGaInP.Between diamond film and DBR reflector, there is metal carbides 25 (metalcarbide) layer again, and has following layer 15 (adhesion layer) between luminescent layer and diamond film in addition.Formed the lamination of tool gradual change type refractive index by following layer, high thermal conductivity hyaline layer, metal carbide layer and reflector, taken out the efficient, in this element, also be can be used as high conductive structure except increasing light.
Example II-3
The structural representation of present embodiment such as Fig. 8.On heat-resisting supporting layer 40 (thermal supportinglayer) as: silicon, copper, carborundum plate DBR (TiO earlier
2/ SiO
2Sandwich construction) reflector 30 (reflector layer), one deck high thermal conductivity hyaline layer 20 (high thermalconductive transparent layer) again grow on the reflector, its coefficient of heat conduction is greater than 300W/mK, as: transparent diamond film (diamond film, n=2.1～2.4), wherein the thickness of diamond film must be greater than 15 μ m.Form active layer in addition on diamond film, wherein active layer can be related semiconductor epitaxial structures 10 (epitaxy layer) such as InGaN or AlGaInP.In addition pass reflector and diamond film so that active layer and heat-resisting supporting layer electrically connect with at least one conducting channel 35 (electrical conductive via).Formed the lamination of tool gradual change type refractive index by reflector and high thermal conductivity hyaline layer, taken out the efficient, in this element, also be can be used as high conductive structure except increasing light.
Example II-4
The structural representation of present embodiment such as Fig. 9.On heat-resisting supporting layer 40 (thermal supportinglayer) as: silicon, copper, carborundum plate DBR (TiO earlier
2/ SiO
2Sandwich construction) reflector 30 (reflector layer), one deck high thermal conductivity hyaline layer 20 (high thermalconductive transparent layer) again grow on the reflector, its coefficient of heat conduction is greater than 300W/mK, as: transparent diamond film (diamond film, n=2.1～2.4), wherein the thickness of diamond film must be greater than 15 μ m.Form active layer in addition on diamond film, wherein active layer can be related semiconductor epitaxial structures 10 (epitaxy layer) such as InGaN or AlGaInP.Between diamond film and DBR reflector, there is metal carbide layer 25 (metal carbide) again, and has following layer 15 (adhesion layer) between active layer and diamond film in addition.Pass reflector, metal carbide layer, diamond film and knitting layer so that active layer and heat-resisting supporting layer electrically connect with at least one conducting channel 35 (electrical conductive via) in addition.Formed the lamination of tool gradual change type refractive index by following layer, high thermal conductivity hyaline layer, metal carbide layer and reflector, taken out the efficient, in this element, also be can be used as high conductive structure except increasing light.
Light-emitting diode heat radiation measurement mode of the present invention
According to the light-emitting diode of diamond film and the heat dissipation of general light-emitting diode of containing of the present invention, be that InfraScope low-grade fever image instrument (InfraScope Micro-Thermal Imager) by Quantum Focus instrument company (Quantum Focus Instruments Corp.) measures, can record the maximum operating temperature (Tmax) of these light-emitting diodes thus.
Measurement
According to aforesaid method for measurement, the measured T of the light-emitting diode that comprises diamond film of embodiment of the invention II-1
MaxIt is 88.49 ℃; On the other hand, knownly constitute by silicon substrate and do not contain the measured T of light-emitting diode of diamond film
MaxThen be 103.87 ℃.Hence one can see that, and light-emitting diode according to the present invention shows the obvious radiating effect that those skilled in the art can't expect.
Each embodiment of the present invention shows and describes as above, but it is not the claim in order to restriction this case.Significantly, those skilled in the art all should be considered as still falling among this case claim institute confining spectrum not departing from the present invention and any change or the modification done under the situation of wide viewpoint according to invention.
Claims (14)
1. the light-emitting component of the lamination formed of the transparent material layer with gradual change type refractive index, it comprises:
Bearing bed comprises:
Transparency carrier; And
Transparent material layer is formed at first of this transparency carrier, and wherein the refractive index of this transparent material layer is the gradual change type refractive index that comprises a plurality of refractive indexes;
The reflector is formed at second of this transparency carrier, wherein this second relative with this first; And
Active layer is formed on this bearing bed.
2. light-emitting component as claimed in claim 1, wherein the refractive index of this transparency carrier must be less than arbitrary refractive index of this transparent material layer.
3. light-emitting component as claimed in claim 1, wherein this transparent material layer is a single layer structure, its thickness is not less than about 3 μ m.
4. light-emitting component as claimed in claim 1, wherein this transparent material layer is a sandwich construction, wherein with this transparency carrier directly follow the layer its thickness be not less than about 3 μ m.
5. light-emitting component as claimed in claim 1, wherein this transparency carrier is selected from the group that sapphire and other alternative transparent materials are formed, and the thickness of this transparency carrier is about 100 to 300 μ m.
6. light-emitting component as claimed in claim 1, wherein this transparent material layer is selected from the group that diamond and other alternative transparent materials are formed, and the preferred thickness of this transparent material layer is about 20 to 30 μ m.
7. the light-emitting component of the lamination formed of the transparent material layer with gradual change type refractive index, it comprises:
Bearing bed comprises:
Transparency carrier; And
Transparent material layer is formed at first of this transparency carrier, and wherein the refractive index of this transparent material layer is the gradual change type refractive index that comprises a plurality of refractive indexes;
The reflector is formed on this bearing bed; And
Active layer is formed at second of this transparency carrier, wherein this second relative with this first.
8. light-emitting component as claimed in claim 7, wherein the refractive index of this transparency carrier must be greater than arbitrary refractive index of this transparent material layer.
9. light-emitting component as claimed in claim 7, wherein this transparency carrier is selected from the group that SiC and other alternative transparent materials are formed, and the thickness of this transparency carrier is about 100 to 300 μ m.
10. light-emitting component as claimed in claim 7, wherein this transparent material layer is selected from the group that diamond, sapphire, tin indium oxide, glass and other alternative transparent materials are formed, and the preferred thickness of this transparent material layer is about 20 to 30 μ m.
11. the optical element of the high conductive structure of tool, it comprises:
Substrate;
High conductive structure, the lamination for the tool gradual change type refractive index comprises:
The reflector is formed on this substrate; And
Transparent membrane is formed on this reflector, and wherein the thickness of this transparent membrane is not less than about 15 μ m; And
Active layer is formed on this high conductive structure.
12. optical element as claimed in claim 11 wherein also comprises metal carbide layer between this reflector and this transparent membrane, and also comprises following layer between this active layer and this transparent membrane.
13. optical element as claimed in claim 11, wherein this substrate is silicon, copper or carborundum.
14. optical element as claimed in claim 11, wherein this transparent membrane is selected from the group that diamond, pottery, glass, zinc oxide, class diamond and other alternative transparent materials are formed, and the thickness of this transparent membrane is about 20 to 30 μ m.
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| CN2008101003001A CN101593798B (en) | 2008-05-26 | 2008-05-26 | Light emitting diode containing transparent base material with gradual change type refractive index or having high thermal diffusivity and application thereof |
| CN201210349604.8A CN102842669B (en) | 2008-05-26 | 2008-05-26 | Photoelectric cell |
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| CN103325916A (en) * | 2012-12-14 | 2013-09-25 | 芜湖德豪润达光电科技有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| CN103972359A (en) * | 2013-02-04 | 2014-08-06 | 宋健民 | Light emitting diode and on-chip packaging structure thereof |
| CN105355756A (en) * | 2015-10-31 | 2016-02-24 | 嘉兴市上村电子有限公司 | Transparent ceramic-based circuit board for LED filaments |
| CN111081690A (en) * | 2013-12-19 | 2020-04-28 | 亮锐控股有限公司 | LED module with uniform phosphor illumination |
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| JP2001189033A (en) * | 1999-12-28 | 2001-07-10 | Toshiba Corp | Optical recording medium |
| US7132309B2 (en) * | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
| JP2006128450A (en) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light-emitting element |
| TW200802917A (en) * | 2006-06-02 | 2008-01-01 | Arima Optoelectronics Corp | High brightness light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103325916A (en) * | 2012-12-14 | 2013-09-25 | 芜湖德豪润达光电科技有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| CN103972359A (en) * | 2013-02-04 | 2014-08-06 | 宋健民 | Light emitting diode and on-chip packaging structure thereof |
| CN111081690A (en) * | 2013-12-19 | 2020-04-28 | 亮锐控股有限公司 | LED module with uniform phosphor illumination |
| CN105355756A (en) * | 2015-10-31 | 2016-02-24 | 嘉兴市上村电子有限公司 | Transparent ceramic-based circuit board for LED filaments |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102842669B (en) | 2015-11-18 |
| CN101593798B (en) | 2012-11-14 |
| CN102842669A (en) | 2012-12-26 |
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