TW200802917A - High brightness light emitting diode - Google Patents

High brightness light emitting diode

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Publication number
TW200802917A
TW200802917A TW95119522A TW95119522A TW200802917A TW 200802917 A TW200802917 A TW 200802917A TW 95119522 A TW95119522 A TW 95119522A TW 95119522 A TW95119522 A TW 95119522A TW 200802917 A TW200802917 A TW 200802917A
Authority
TW
Taiwan
Prior art keywords
layer
reflector
bond
emitting diode
light emitting
Prior art date
Application number
TW95119522A
Other languages
Chinese (zh)
Inventor
Wen-Chieh Huang
zhi-xiang Zhao
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to TW95119522A priority Critical patent/TW200802917A/en
Publication of TW200802917A publication Critical patent/TW200802917A/en

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Abstract

The present invention provides a high brightness light emitting diode, which includes: a substrate with a first electrode on the bottom side thereof; a bonding layer located on the substrate; a reflector located on the bonding layer and consisted of a metal reflection layer and a transparent dielectric layer with low reflectivity or formed into a dispersion-type Prague reflector, in which the transparent dielectric layer is formed of a material selected from a group consisted of metal oxides, fluorides, oxides, or pseudo-diamond carbide; a transparent conductive oxide layer located beneath the surface layer of the transparent dielectric layer and is formed of a material selected from GITO, ZITO or ITO, and downwardly installed with conductive metal striding over the dielectric zone; a first bond layer located on the reflector and the transparent conductive oxide layer; an active layer on the first bond layer; a second bond layer on the active layer; and a second electrode on the second bond layer. Thus, the disclosed LED provides a highly reflective reflector and has the effects of efficiency with increased light extraction efficiency.
TW95119522A 2006-06-02 2006-06-02 High brightness light emitting diode TW200802917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95119522A TW200802917A (en) 2006-06-02 2006-06-02 High brightness light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95119522A TW200802917A (en) 2006-06-02 2006-06-02 High brightness light emitting diode

Publications (1)

Publication Number Publication Date
TW200802917A true TW200802917A (en) 2008-01-01

Family

ID=44765510

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95119522A TW200802917A (en) 2006-06-02 2006-06-02 High brightness light emitting diode

Country Status (1)

Country Link
TW (1) TW200802917A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859860A (en) * 2010-05-04 2010-10-13 厦门市三安光电科技有限公司 AlGaInP-series light-emitting diode with double reflecting layers and preparation method thereof
TWI495164B (en) * 2009-04-16 2015-08-01 Nichia Corp Light emitting device
CN102842669B (en) * 2008-05-26 2015-11-18 晶元光电股份有限公司 Photoelectric cell
CN111969002A (en) * 2020-08-28 2020-11-20 上海大学 Ultra-clear flexible light-emitting display and preparation method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102842669B (en) * 2008-05-26 2015-11-18 晶元光电股份有限公司 Photoelectric cell
TWI495164B (en) * 2009-04-16 2015-08-01 Nichia Corp Light emitting device
US9136450B2 (en) 2009-04-16 2015-09-15 Nichia Corporation Light emitting device
CN101859860A (en) * 2010-05-04 2010-10-13 厦门市三安光电科技有限公司 AlGaInP-series light-emitting diode with double reflecting layers and preparation method thereof
CN101859860B (en) * 2010-05-04 2013-04-10 厦门市三安光电科技有限公司 Method for preparing AlGaInP-series light-emitting diode with double reflecting layers
CN111969002A (en) * 2020-08-28 2020-11-20 上海大学 Ultra-clear flexible light-emitting display and preparation method thereof

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